However, BJT’s refuse to step down because of their high current drive capability and superior analog performance (also useful in power applications)
life time of minority carriers, respectively. The general solution is
p nx p n C 1 e xL p C 2 e xL p
Where Lp Dpp is the diffusion length of holes.
When IE=0, the device is cutoff, IC is the reverse leakage current of the CBJ. Note that IC≠0 for VCB=0. The current is contributed by IE if the BEJ is forward biased.
forward reverse forward reverse
C-B reverse forward
forward reverse
Mode
active inverted saturation cutoff
An idealized p-n-p transistor in thermal equilibrium, that is ,where all there leads are connected together or all are ground.
1. The device has uniform doping in each region.
