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RQK0201QGDQA中文资料

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Rev.3.00 Jun 12, 2006 page 1 of 6

RQK0201QGDQA

Silicon N Channel MOS FET Power Switching REJ03G1321-0300 Rev.3.00 Jun 12, 2006 Features • Low on-resistance RDS(on) = 25 mΩ typ (VGS = 4.5 V, ID = 2.4 A) • Low drive current • High speed switching • 2.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A(Package name: MPAK)

1. Source2. Gate3. Drain

SD

G221

133

Note: Marking is “QG”. Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 20 V Gate to source voltage VGSS ±12 V Drain current ID 4.5 A Drain peak current ID(pulse) Note1 15 A Body - drain diode reverse drain current IDR 4.5 A Channel dissipation Pch Note2 0.8 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. When using the glass epoxy board (FR-4: 40 x 40 x 1 mm) 元器件交易网www.cecb2b.comRQK0201QGDQA Rev.3.00 Jun 12, 2006 page 2 of 6 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Drain to source breakdown voltage V(BR)DSS 20 — — V ID = 10 mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS ±12 — — V IG = ±100 µA, VDS = 0 Gate to source leak current IGSS — — ±10 µA VGS = ±10 V, VDS = 0 Drain to source leak current IDSS — — 1 µA VDS = 20 V, VGS = 0 Gate to source cutoff voltage VGS(off) 0.4 — 1.4 V VDS = 10 V, ID = 1 mA RDS(on) — 30 39 mΩ ID = 2.4A, VGS = 4.5 VNote3 Drain to source on state resistance RDS(on) — 38 53 mΩ ID = 2.4A, VGS = 2.5 VNote3 Forward transfer admittance |yfs| 9 12 — S ID = 2.4A, VDS = 10 VNote3 Input capacitance Ciss — 479 — pF Output capacitance Coss — 106 — pF Reverse transfer capacitance Crss — 48 — pF VDS = 10 V VGS = 0 f = 1 MHz Turn - on delay time td(on) — 14 — ns Rise time tr — 53 — ns Turn - off delay time td(off) — 35 — ns Fall time tf — 6 — ns ID = 2.4 A VGS = 4.5 V RL = 5.50 Ω Rg = 4.7 Ω Total gate charge Qg — 4.6 — nC Gate to source charge Qgs — 0.9 — nC Gate to drain charge Qgd — 1.3 — nC VDD = 10 V VGS = 4.5 V ID = 4.5 A Body - drain diode forward voltage VDF — 0.85 1.1 V IF = 4.5 A, VGS = 0 Note3 Notes: 3. Pulse test 元器件交易网www.cecb2b.comRQK0201QGDQA Rev.3.00 Jun 12, 2006 page 3 of 6 Main Characteristics

108642006

3915

12

0.00010.0010.011

0.1

00.511.522.5300.20.40.60.81

050100150

03691215

00.511.522.533.54Tc = 75°C–25°C25°CVDS = 10 VPulse Test

011.5

0.5

–250255075100125150VDS = 10 VPulse TestVDS = 10 VPulse Test

Tc = 75°C25°C

–25°CVGS = 0 VPulse TestTc = 25°C

1.6 V1.8 V2.0 V10 V2.2 V3 V

1.4 V0.010.1110100

0.010.1110100Ta = 25°C1 Shot Pulse100 µs

PW = 100 ms1 ms10 msDC Operation

ID = 10 mA

1 mA0.1 mAAmbient Temperature Ta (°C)Channel Dissipation Pch (W)Maximum Channel PowerDissipation CurveMaximum Safe Operation Area

Drain to Source Voltage VDS (V)Drain Current ID (A)

Drain Current ID (A)Typical Output Characteristics

Drain to Source Voltage VDS (V)Typical Transfer Characteristics (1)

Gate to Source Voltage VGS (V)Drain Current ID (A)

Typical Transfer Characteristics (2)

Gate to Source Voltage VGS (V)Drain Current ID (A)Gate to Source Cutoff Voltage vs.Case Temperature

Case Temperature Tc (°C)Gate to Source Cutoff Voltage VGS(off) (V)*When using the glass epoxy board (FR-4: 40 × 40 × 1 mm)Operation in this areais limited by RDS(on)

元器件交易网www.cecb2b.comRQK0201QGDQA Rev.3.00 Jun 12, 2006 page 4 of 6

0100200300400

0246810101001000

0.1110100

20304050

203040506070

–250255075100125150

–250255075100125150–250255075100125150

0.010.1110100

0.010.1110010110100100010000Pulse TestTc = 25°C

2.4 A

1 A10 V4.5 V

0.5 AID = 4.5 APulse TestVGS = 4.5 V

Pulse TestVGS = 2.5 VVGS = 2.5 VPulse TestTc = 25°C

–25°C

Tc = 75°C25°CPulse TestVDS = 10 VPulse TestVGS = 0 VVDS = 20 V2.4 A0.5 A1 A4.5 A

2.4 A

1 A0.5 AID = 4.5 ADrain to Source Saturation Voltage vs.Gate to Source Voltage

Gate to Source Voltage VGS (V)Drain to Source Saturation Voltage VDS(on) (mV)Static Drain to Source on State Resistancevs. Drain Current

Drain Current ID (A)Drain to Source on State Resistance

RDS(on) (mΩ)

Static Drain to Source on State Resistancevs. Case Temperature

Case Temperature Tc (°C)Drain to Source on State Resistance

RDS(on) (mΩ)Static Drain to Source on State Resistancevs. Case Temperature

Case Temperature Tc (°C)Drain to Source on State Resistance

RDS(on) (mΩ)

Forward Transfer Admittance vs.Drain Current

Drain Current ID (A)Forward Transfer Admittance |yfs| (S)Zero Gate Voltage Drain current vs.Case Temperature

Case Temperature Tc (°C)Zero Gate Voltage Drain current IDSS (nA)

元器件交易网www.cecb2b.com

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HF115F-Q012-1HXXX中文资料

HF115F-Q012-1HXXX中文资料

HF115F-Q012-1HXXX中文资料

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MQO28512Q中文资料

MQO28512Q中文资料

MODELSVDC OUTPUT

B2-53

Size (max.): 3.200 x 2.600 x 0.460 inches (81.28 x 66.04 x 11.68 mm)See Section B8, case N, for dimensions.Weight:120 grams typicalScreening: Standard or ES. See Section C2 for screening options,

see Section A5 for ordering information.FEATURES•–55°C to +125°C operation•16 TO 40 VDC input•Four fully regulated outputs•Internal EMI filter meets MIL-STD-461C CE03•Active transient suppressor•Built in hold-up function with flag•Fully isolated•Magnetic feedback•Fixed frequency, 550 kHz typical•Topology – Single Ended Forward•Inhibit function•Indefinite short circuit protection•Undervoltage lockoutQUAD±5 and ±12±5 and ±15

DESCRIPTION

The MQO Series™of DC/DC converters supply up to 16.5 watts ina four output configuration of ±5 and ±12 or ±5 and ±15 VDC. Anintegral EMI filter and transient suppressor allow the converters tomeet MIL-STD-461C standards without external components. Anoutput hold-up feature provides a low power flag and full outputpower hold-up through transient dropout conditions. The MQO Series converters are packaged in hermetically sealedcases and are rated for full power operation from –55°to +125°Ccase temperature. This makes these units ideal for military, aero-space, and hi-rel industrial applications.Ahigh gain bandwidth magnetically isolated control loop is used toprecisely regulate the +5 VDC output. Constant frequency pulsewidth with a single ended forward topology is used. The –5 VDCoutput and the auxiliary outputs are independently controlled withlow headroom regulators, eliminating cross regulation errors. Theuse of feedforward, compensation, and a high gain bandwidthcontrol loop provides excellent rejection to the conducted audiospectrum of MIL-STD-704A-D and MIL-STD-461C.INTEGRALEMI FILTERThe MQO Series includes a a built-in EMI filter and transientsuppressor which allow the units to meet the most common militarystandards without any external components. The internal EMI filterprovides both differential and common mode attenuation on the input power lines to allow meeting the CE03 interference and CS02 susceptibility requirements. The active internal transient suppressorprovides protection against MIL-STD-704A, 1275, and 461C linetransients. Protection is provided for transients up to 400 V from a0.5 ohm source and 600 V from a 50 ohm source. BUILT-INHOLD-UPFUNCTIONWITHFLAGAn output hold-up feature provides a low power flag and full outputpower hold-up through transient drop out conditions. At full load fora Vin step from 28 to 0 volts, the minimum hold-up time will be 50µs. The low power flag (TTLhigh) is asserted 10 µs before the endof the hold-up time. External capacitance can be added to extendhold-up time.SHORTCIRCUITPROTECTIONMQO Series converters provide predictable current limiters whichdirectly sense output load current in the converter’s secondary.During short circuit or overload conditions, the current limitersprovide constant output current and an input power fold-back.UNDERVOLTAGELOCKOUTUndervoltage lockout prevents the converters from operating belowapproximately 12 VDC input voltage which helps keep systemcurrent levels smooth, especially during initialization or re-start oper-ations.DC/DC CONVERTERS

KK25GB80中文资料

KK25GB80中文资料

󰋔IT(AV) 25A, IT(RMS) 39A, ITSM500A󰋔di/dt 100 A/󰐖s󰋔dv/dt 500V/󰐖s󰊢Applications󰊣Various rectifiersAC/DC motor drivesHeater controlsLight dimmersStatic switchesInternal Configurations

SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@ PK(PD,PE,KK)25GBTHYRISTORMODULEUL;E76102󰊢M󰊣93.5MAX26MAX

30MAX13

21K1G180

110TAB16.5233~+–21233-M52-󰀁󰀁6.5K2G2

󰋙Maximum RatingsSymbolItemPK25GB40 PD25GB40KK25GB40 PE25GB40RatingsPK25GB80PD25GB80KK25GB80PE25GB80UnitVRRM󰋎Repetitive Peak Reverse Voltage400800V480960V400800VVRSMVDRM󰋎Non-Repetitive Peak Reverse VoltageRepetitive Peak Off-State VoltageSymbolItemConditionsRatings25UnitIT󰊢AV󰊣󰋎Average On-State CurrentIT󰊢RMS󰊣󰋎R.M.S. On-State CurrentSingle phase, half wave, 180󰋃conduction, Tc󰉿97󰋆Single phase, half wave, 180󰋃conduction, Tc󰉿97󰋆ITSM󰋎Surge On-State CurrentI2t󰋎I2tPGMPeak Gate Power DissipationPG󰊢AV󰊣Average Gate Power DissipationIFGMPeak Gate CurrentVFGMPeak Gate Voltage (Forward)1󰊗2cycle, 50Hz/60Hz, peak Value, non-repetitiveValue for one cycle of surge currentA39A450/500A100010A2SW1VRGMPeak Gate Voltage (Rsverse)di󰊗dtCritical Rate of Rise of On-State CurrentIG󰊹100mA󰉼Tj󰊹25󰋆󰉼VD󰊹1󰊗2VDRM󰉼dIG/dt󰊹0.1A/󰐖sVISO󰋎Isolation Breakdown Voltage (R.M.S.)Tj󰋎Operating Junction TemperatureTstg󰋎Storage TemperatureMountingTorqueMassMounting󰊢M5󰊣Terminal󰊢M5󰊣A.C.1minuteRecommended Value 2.5-3.9󰊢25-40󰊣Recommended Value 1.5-2.5󰊢15-25󰊣3WA10V5V100A/󰐖s2500V󰊵40 󰁕󰁐󰀁󰊴125󰋆󰊵40 󰁕󰁐󰀁󰊴1254.7󰊢48󰊣2.7󰊢28󰊣170󰋆N󰅋m󰊢󱶵f󰅋B󰊣gUnit󰉿A

KBL02中文资料

KBL02中文资料

.048(1.22).052(1.32)_+

.750(19)Min

.200(5.08)TYP.605(15.367).725(16.383).770(19.558).730(18.542)

(TYP).070(1.778).265(6.73).235(5.97)

450

.210(5.33).190(4.83) GALAXY ELECTRICAL

FEATURES

◇ Rating to 1000V PRV

◇ Surge overload rating to 150 Amperes peak

◇ Ideal for printed circuit board

◇ Reliable low cost construction utilizing molded

plastic technique results in inexpensive product

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25℃ ambient temperature unless otherwise specified.

Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.

KBL02KBL04KBL06KBL08KBL10UNITS

Maximum recurrent peak reverse voltageVRRM2004006008001000V

Maximum RMS voltageVRMS140280420560700V

Maximum DC blocking voltageVDC 200 400 600 800 1000 V

Maximum average forward

Output current @TA=50℃

Peak forward surge current