TFT Array制程技术简介(20080917)

TFT Array製程技術~The Technology of TFT Array Processing中小事業部產品設計總處面板設計處AR設計部isplaying your vision!isplaying your vision!E/B and E/S TFT StructureData Line &SourcePassivation SiNxGate Line Cs Line & CstGate InsulatorGlass SubstrateGate Line & CstGlass Sub.Passivation SiNxGate InsulatorData Line & SourceE/B Type TFT & Cs on Common TFT Array StructureE/S Type TFT & Cs on Gate TFT Array StructurePixel Elements isplaying your vision!isplaying your vision!5-Photo Exposure ProcessInsulatorPassivation(1)Gate Patterning (Mask 1)(2)SiN/a-Si/n+ a-Si Deposition(3)a-Si Pattering (Mask 2)(4)S/D Metal Patterning (Mask 3)(5)Back Channel Etching for B/E structure (6)Passivation Layer Coverage(7)Contact Hole/ Window Etching (Mask 4)(8)ITO Pixel Electrode Patterning (Mask 5)a-Si TFT BCE Profileisplaying your vision!From Innolux 7” 2005GE Patterning (Mask 1)isplaying your vision!GI and SE Layer Depositionisplaying your vision!Crossover CoverageActive Layerisplaying your vision!Data Line &SourceElectrode isplaying your vision!Back Channel Etching Data Line &SourceElectrodeisplaying your vision!CH Layer Deposition Passivation Layer(SiNx)isplaying your vision!Passivation Layer(SiNx)isplaying your vision!PassivationLayer (SiNx) isplaying your vision!PVD/ Sputteringisplaying your vision!Metal and AlloyGate Source/DrainAUO Mo/AlNdTi/Al/TiMoWMo/Al/MoCMO MoN/AlNd MoN/Al/MoN HANNSTAR MoWMo/AlNd/MoMo/AlNd/Mo Innolux Al/Mo Mo/Al/Mo AUO(QDI)Al/Ti Ti/Al/TiNCPT CrAlNdNMoNbCr MoNb Mo/Al/Moisplaying your vision!PECVDHeat StageSubstrateisplaying your vision!Thin Film Quality⏹理想的閘極絕緣層(Gate insulator) 性質:良好的階梯覆蓋能力(Good Step Coverage)適中的介電常數(Dielectric Constant)高崩潰電壓(High Breakdown V oltage)低薄膜應力(Low Stress)與a-Si 有良好的界面（Good interface with a-Si film)⏹理想的保護層(Passivation Layer) 性質:抗水氣能力佳(Diffusion Barrier Against Moisture)抗鹼金屬離子滲透力佳(Diffusion Barrier Against Alkali Ions)硬度佳，可承受機械性刮傷低製程溫度isplaying your vision!isplaying your vision!SiNxParticleSiNxPinholePECVDSiNx:4000A a-Si:1500A n+a-Si:300A洗淨、、a-Si/n+洗淨SPUTTERINGSD MetalGateGate a-Si / n+The Pin Holesisplaying your vision!PECVDSiNx:3000APECVD SiNx洗淨SiNxGateSiNxSiNxPinholeGate PECVD SiNx:1000ASiNxGate GateGateisplaying your vision!SiNx:4000A a-Si:1500A n+a-Si:300A PECVD 現製程SiNx:3000A一次成膜洗淨二次成膜洗淨SiNx:1000A a-Si:300A a-Si:1200A n+a-Si:300A PECVD 原製程洗淨(GI)(SE-i)(SE-n+)(SE-n+)(SE-HDR-i)(SE-LDR-i)(GI-2)(GI-1)Photolithographyisplaying your vision!P.R. CoatingSubstrate Substrateisplaying your vision!Photo ExposureSubstrate isplaying your vision!Photo StitchingSubstrate isplaying your vision!Random Shot for Stitching isplaying your vision!isplaying your vision!Scan PhotoMask MoveStage MoveSubstrateEtchingEtching Mode Dry WetEquipment Plasma Enhanced CVD Liquid TroughEtching Rate Slow FastUniformity Good NormalThin Film A-Si, SiNx, Mo Al, Mo, Cr, ITOEtchant HCl, SF6, CF6HCl, HNO3, CH3OOH Etch Profile Non-isotropic IsotropicTaper Etch Vertical(ex.80~90)Slope(ex.20~45) Cost Expensive Cheap isplaying your vision!isplaying your vision!1.斷面形狀(Taper )Taper 係指蝕刻後的斷面傾斜度，是蝕刻製程中相當重要的要求，與後續沉積之薄膜覆蓋性有相當密切的關係。

覆蓋性很差(e.g.濕蝕刻)覆蓋性差(e.g.濺擊蝕刻)覆蓋性佳(e.g. RIE/PE 蝕刻)等向性蝕刻非向性蝕刻控制性蝕刻isplaying your vision!2.CD Loss (Critical Dimension Loss)GlassCrSiNGlassCrSiNPRPRPVD Cr depo.CVD SiN depo.PR PatterningGlassCrPRPRA(after dev. Size)B CD Loss = B-ADry Etching(after Etching Size)The ESD GuardShorting RingESD GuardShorting Ringisplaying your vision!4-PEP TFT Arrayisplaying your vision!4-Photo Exposure ProcessAdvanced Tech. 4-Masksisplaying your vision!isplaying your vision!Gray Tone or Slit Maskisplaying your vision!isplaying your vision!Reference五南文化出版經濟部出版isplaying your vision!。