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BC817-25中文资料

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DS11107 Rev. 9 - 2
YM
3 of 3
BC817-16/-25/-40
400
See Note 1
1000 fT, GAIN BANDWIDTH PRODUCT (MHz)
TA = 25°C f = 20MHz
Pd, POWER DISSIPATION (mW)
300
VCE = 5V
200
100
1V
100
0 0 100 TSB, SUBSTRATE TEMPERATURE (°C) Fig. 1, Power Derating Curve 200
E D G H
C D E G H
K J L
M
J K L M a
All Dimensions in mm
Maximum Ratings
Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current Peak Emitter Current
DS11107 Rev. 9 - 2
2 of 3
BC817-16/-25/-40
Ordering Information
Device* BC817-xx-7
(Note 3) Packaging SOT-23 Shipping 3000/Tape & Reel
Notes: 3. For Packaging Details, go to our website at /datasheets/ap02007.pdf. * xx = gain group, e.g. BC817-16-7.
BC817-16 / -25 / -40
NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR Features
· · · · · · · · · · · · Ideally Suited for Automatic Insertion Epitaxial Planar Die Construction For Switching, AF Driver and Amplifier Applications Complementary PNP Types Available (BC807)
VCE(SAT) VBE ICES IEBO fT CCBO
V V nA µA nA MHz pF
IC = 500mA, IB = 50mA VCE = 1.0V, IC = 300mA VCE = 45V VCE = 25V, Tj = 150°C VEB = 4.0V VCE = 5.0V, IC = 10mA, f = 50MHz VCB = 10V, f = 1.0MHz
Marking Information
XXX
XXX = Product Type Marking Code (See Page 1), e.g. K6A = BC817-16 YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September
A B
C
Mechanical Data
Case: SOT-23, Molded Plastic Case material - UL Flammability Rating Classification 94V-0 Moisture sensitivity: Level 1 per J-STD-020A Terminals: Solderable per MIL-STD-202, Method 208 Pin Connections: See Diagram Marking (See Page 3): BC817-16 6A, K6A BC817-25 6B, K6B BC817-40 6C, K6C Ordering & Date Code Information: See Page 3 Approx. Weight: 0.008 grams
10 1 10 100 1000
IC, COLLECTOR CURRENT (mA) Fig. 2, Gain-Bandwidth Product vs Collector Current
1000
VCE = 1V
0.5 VCE(SAT), COLLECTOR SATURATION VOLTAGE (V)
Date Code Key Year Code Month Code 1998 J Jan 1 Feb 2 1999 K March 3 2000 L Apr 4 May 5 2001 M Jun 6 Jul 7 2002 N Aug 8 Sep 9 2003 P Oct O Nov N 2004 R Dec D
typical limits at TA = 25°C
0.4 hFE, DC CURRENT GAIN
IC / IB = 10 150°C TA = 25°C -50°C
0.3
100
0.2
25°C
0.1
150°C -50°C
0 0.1
10 1 10 100 1000 0.1 1 10 100 1000
0.35
500
3.2
2.8
IC, COLLECTOR CURRENT (mA)
400
IC, COLLECTOR CURRENT (mA)
2.4 2 1.8 1.6 1.4 1.2
80
0.3
0.25
300
60
0.2
200
0.8 0.6
40
0.15
100
0.4
0.1
20
IB = 0.05mA
IB = 0.2mA
1. Device mounted on Ceramic Substrate 0.7mm; 2.5cm2 area. 2. Short duration pulse test used to minimize self-heating effect.
DS11107 Rev. 9 - 2
1 of 3
BC817-16/-25/-40
Characteristic
Power Dissipation at TSB = 50°C (Note 1) Thermal Resistance, Junction to Substrate Backside (Note 1) Thermal Resistance, Junction to Ambient Air (Note 1) Operating and Storage Temperature Range
B E
SOT-23 Dim
A C B
TOP VIEW
Min 0.37 1.20 2.30 0.89 0.45 1.78 2.80 0.013 0.903 0.45 0.85 0°
Max 0.51 1.40 2.50 1.03 0.60 2.05 3.00 0.10 1.10 0.61 0.80 8°
Characteristic (Note 2) Current Gain Group -16 -25 -40 Current Gain Group -16 -25 -40
hFE
Collector-Emitter Saturation Voltage Base-Emitter Voltage Collector-Emitter Cutoff Current Emitter-Base Cutoff Current Gain Bandwidth Product Collector-Base Capacitance Notes:
Electrical Characteristics
DC CurrenБайду номын сангаас Gain
@TA = 25°C unless otherwise specified Symbol Min 100 160 250 60 100 170 — — — — 100 — Max 250 400 600 — — — 0.7 1.2 100 5.0 100 — 12 Unit Test Condition VCE = 1.0V, IC = 100mA — VCE = 1.0V, IC = 300mA
@TA = 25°C unless otherwise specified Symbol VCEO VEBO IC ICM IEM Pd RqSB RqJA Tj, TSTG Value 45 5.0 800 1000 1000 310 320 403 -65 to +150 Unit V V mA mA mA mW °C/W °C/W °C
IC, COLLECTOR CURRENT (mA) Fig. 3, Collector Sat. Voltage vs Collector Current
IC, COLLECTOR CURRENT (mA) Fig. 4, DC Current Gain vs Collector Current 100
0 0 1 VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 5, Typical Emitter-Collector Characteristics 2
0 0 10 VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 6, Typical Emitter-Collector Characteristics 20

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BC 817-25中文资料

BC 817-25中文资料


Symbol VCEO VCBO VEBO IC ICM IB IBM Ptot Tj Tstg
RthJA RthJS
BC 817
BC 818 Unit
45
25
V
50
30
5
5
500
mA
1
A
100
mA
200
330
mW
150
°C
-65 ... 150
≤285
K/W
≤215
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu
3.0 V 4.0 V BEsat
10 -1 0
0.2
0.4
0.6 V 0.8
VCEsat
10 3 BC 817/818
h FE 5 100 ˚C 25 ˚C -50 ˚C
10 2
5
EHP00224
10 1 5
10 0
10 -1
10 0
10 1
10 2 mA 10 3
ΙC
5
Sep-27-1999
VCEsat
-
-
0.7 V
Base-emitter saturation voltage 1) IC = 500 mA, IB = 50 mA
VBEsat
-
-
1.2
1) Pulse test: t ≤ 300µs, D = 2%
2
Sep-27-1999
元器件交易网
BC 817, BC 818
D=
0 0.005
0.01 0.02 0.05 0.1 0.2 0.5
10 5 BC 817/818 nA Ι CBO 10 4
BC817芯片资料

BC817芯片资料

BC817/BC818 NPN EPITAXIAL SILICON TRANSISTORSWITCHING AND AMPLIFIER APPLICATIONS• Suitable for AF-Driver stages and low power output stages • Complement to BC807/BC808ABSOLUTE MAXIMUM RATINGS (T A =25°C)ELECTRICAL CHARACTERISTICS (T A =25°C)h FE CLASSIFICATIONMARKING CODECharacteristicSymbol Rating Unit Collector Emitter Voltage : BC817 : BC818Collector Emitter Voltage : BC817 : BC818Emitter-Base Voltage Collector Current (DC)Collector Dissipation Junction Temperature Storage TemperatureV CES V CEO V EBO I C P C T J T STG503045255800310150-65 ~ 150V V V V V mA mW °C °CCharacteristicSymbol Test Conditions MinTypMaxUnitCollector-Emitter Breakdown Voltage: BC817: BC818Collector-Emitter Breakdown Voltage: BC817: BC818Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current GainCollector-Emitter Saturation Voltage Base-Emitter On VoltageCurrent Gain Bandwidth Product Collector-Base CapacitanceBV CEO BV CESBV EBO I CES I EBO h FE 1h FE 2V CE (sat)V BE (on)f T C CBOI C =10mA, I B =0I C =0.1mA, I B =0I E =0.1mA, I C =0V CE =25V, I B =0V EB =4V, I C =0V CE =1V, I C =100mA V CE =1V, I C =300mA I C =500mA, I B =50mA V CE =1V, I C =300mA V CE =5V, I C =10mA f=50MHzV CB =10V, f=1MHz452550305100601001001006300.71.212V V V V V nA nAV V MHz pFClassification162540h FE 1100-250160-400250-630h FE 260-100-170-TYPE 817-16817-25817-40818-16818-25818-40MARKING8FA8FB8FC8GA8GB8GCSOT-231. Base2. Emitter3. Collector©1999 Fairchild Semiconductor CorporationRev. BTRADEMARKSACEx™CoolFET™CROSSVOLT™E 2CMOS TM FACT™FACT Quiet Series™FAST ®FASTr™GTO™HiSeC™The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORTDEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROV AL OF FAIRCHILD SEMICONDUCTOR CORPORA TION.As used herein:ISOPLANAR™MICROWIRE™POP™PowerTrench™QS™Quiet Series™SuperSOT™-3SuperSOT™-6SuperSOT™-8TinyLogic™1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant intothe body, or (b) support or sustain life, or (c) whosefailure to perform when properly used in accordancewith instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.2. A critical component is any component of a lifesupport device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONS Definition of TermsDatasheet Identification Product Status Definition Advance InformationPreliminary No Identification Needed Obsolete This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.This datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.Formative or In DesignFirst ProductionFull ProductionNot In ProductionDISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.。

BC868-25中文资料

BC868-25中文资料

handbook, halfpage
BC868
PINNING PIN 1 2 3 emitter collector base DESCRIPTION
2
DESCRIPTION NPN medium power transistor in a SOT89 plastic package. PNP complement: BC869. MARKING TYPE NUMBER BC868 BC868-25 MARKING CODE CAC CDC
b1 e1 e
0
2 scale
4 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.6 1.4 b1 0.48 0.35 b2 0.53 0.40 b3 1.8 1.4 c 0.44 0.37 D 4.6 4.4 E 2.6 2.4 e 3.0 e1 1.5 HE 4.25 3.75 L min. 0.8 w 0.13
NPN medium power transistor
PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 3 leads
BC868
SOT89
D
B
A
b3
E HE
L
1
2
b2
3
c
w M
150
100
50
0 10−1
1
10
102
103
IC (mA)
104
VCE = 1 V.
Fig.2 DC current gain; typical values.
BC817-25LT3中文资料

BC817-25LT3中文资料

BC817−16LT1,BC817−25LT1, BC817−40LT1General Purpose TransistorsNPN SiliconFeatures•Pb−Free Packages are AvailableMAXIMUM RATINGSMaximum ratings are those values beyond which device damage can occur.Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.THERMAL CHARACTERISTICS2.Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.ORDERING INFORMATIONCOLLECTOR12EMITTERELECTRICAL CHARACTERISTICS (T= 25°C unless otherwise noted)ON CHARACTERISTICSSMALL−SIGNAL CHARACTERISTICS†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our T ape and Reel Packaging Specifi-cations Brochure, BRD8011/D.I C , COLLECTOR CURRENT (mA)Figure 1. DC Current Gainh F E , D C C U R R E N T G A I NI B , BASE CURRENT (mA)Figure 2. Saturation Region I C , COLLECTOR CURRENT (mA)Figure 3. “On” Voltages100101V R , REVERSE VOLTAGE (VOLTS)Figure 4. Temperature Coefficients +1I C , COLLECTOR CURRENT (mA)Figure 5. Capacitances−2−1V C E , C O L L E C T O R −E M I T T E R V O L T A G E (V O L T S )V , V O L T A G E (V O L T S )V , T E M P E R A T U R E C O E F F I C I E N T S (m V /C )°θC , C A P A C I T A N C E (p F )1.00.80.60.40.20PACKAGE DIMENSIONSSOT−23 (TO−236)CASE 318−09ISSUE AI*For additional information on our Pb−Free strategy and solderingdetails, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.SOLDERING FOOTPRINT*ǒmm inchesǓSCALE 10:1DIM A MIN MAX MIN MAX MILLIMETERS 0.11020.1197 2.80 3.04INCHES B 0.04720.0551 1.20 1.40C 0.03850.04980.99 1.26D 0.01400.02000.360.50G 0.06700.0826 1.70 2.10H 0.00400.00980.100.25J 0.00340.00700.0850.177K 0.01800.02360.450.60L 0.03500.04010.89 1.02S 0.08300.0984 2.10 2.50V0.01770.02360.450.60NOTES:1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.2.CONTROLLING DIMENSION: INCH.3.MAXIUMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.4.318−01, −02, AND −06 OBSOLETE, NEW STANDARD 318−09.V STYLE 6:PIN 1.BASE2.EMITTER3.COLLECTORON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.PUBLICATION ORDERING INFORMATION。