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BC 857C中文资料

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2
Sep-28-1999
元器件交易网
BC 856 ... BC 860
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
DC Characteristics
元器件交易网
PNP Silicon AF Transistors
BC 856 ... BC 860
• For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC 846, BC 847, BC 848
Thermal Resistance Junction ambient 1) Junction - soldering point
Symbol
VCEO VCBO VCES VEBO IC ICM IBM IEM Ptot Tj Tstg
BC 856 BC 857 BC 858 Unit
BC 860 BC 859
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
V(BR)CEO
IC = 10 mA, IB = 0
BC 856
65
-
BC 857/860
45
-
V -
BC 858/859
65
45
30 V
80
50
30
80
50
30
5
5
5
100
mA
200
mA
200
200
330
mW
150
°C
-65 ... 150
RthJA RthJS
≤310
K/W
≤240
Electrical Characteristics at TA = 25°C, unless otherwise specified.
BC 849, BC 850 (NPN)
3
2 1 VPS05161
Type BC 856A BC 856B BC 857A BC 857B BC 857C BC 858A BC 858B BC 858C BC 859A BC 859B BC 859C BC 860B BC 860C
Marking 3As 3Bs 3Es 3Fs 3Gs 3Js 3Ks 3Ls 4As 4Bs 4Cs 4Fs 4Gs
Base-emitter voltage 1) IC = 2 mA, VCE = 5 V IC = 10 mA, VCE = 5 V
VBEsat
-
700
-
-
850
-
VBE(ON) 600 650 750
-
-
820
1) Pulse test: t ≤ 300µs, D = 2%
3
Sep-28-1999
1
Sep-28-1999
元器件交易网
BC 856 ... BC 860
Maximum Ratings Parameter
Collector-emitter voltage Collector-base voltage Collector-emitter voltage Emitter-base voltage DC collector current Peak collector current Peak base current Peak emitter current Total power dissipation, TS = 71 °C Junction temperature Storage temperature
Total power dissipation Ptot = f (TA*;TS) * Package mounted on epoxy
Collector-base capacitance CCB = f (VCBO) Emitter-base capacitance CEB = f (VEBO)
400 mW Ptot 300
10 2 5
EHP00378
10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s tp
10 0
5
10 1 10 -1
5 10 0
5 101
mA 10 2 ΙC
Sep-28-1999
元器件交易网
BC 856 ... BC 860
Collector cutoff current ICBO = f (TA) VCB = 30V
元器件交易网
BC 856 ... BC 860
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
AC Characteristics
C 150 TA
10 2 mA ΙC
10 1 5
EHP00380
100 C 25 C -50 C
10 0 5
10 -1 0
0.1 0.2 0.3 0.4 V 0.5 VCEsat
Base-emitter saturation voltage IC = f (VBEsat), hFE = 20
10 3 h FE 5 100 C
25 C 102 -50C
5
EHP00382
10 2
mA ΙC
10 1 5
100 C 25 C -50 C
EHP00379
10 1
10 0
5
5
10 0 10 -2
5 10 -1 5 10 0
5 101 mA 10 2 ΙC
10 -1 0
6
0.2 0.4 0.6 0.8
V 1.2 V BEsat
Sep-28-1999
F BC 859 BC 860
-
-
- dB
Equivalent noise voltage
IC = 200 µA, VCE = 5 V, RS = 2 kΩ, f = 10 ... 50 Hz
Vn BC 860
-
- 0.11 µV
4
Sep-28-1999
元器件交易网
BC 856 ... BC 860
h11e h12e
10 0 5 h 21e
EHP00383
V 101 VCB0 (VEB0 )
Transition frequency fT = f (IC) VCE = 5V
10 3 Ptot max 5 Ptot DC
10 2 5
10 1 5
D = tp T
tp T
EHP00377
D=
0 0.005
0.01 0.02 0.05 0.1 0.2 0.5
10 3 MHz fT 5
h12e
IC = 2 mA, VCE = 5 V, f = 1 kHz
hFE-gr.A
hFE-gr.B
hFE-gr.C
10-4Leabharlann -1.5-
-
2
-
-
3
-
Short-circuit forward current transf.ratio IC = 2 mA, VCE = 5 V, f = 1 kHz
h21e hFE-gr.A hFE-gr.B hFE-gr.C
元器件交易网
BC 856 ... BC 860
h parameter he = f (IC) normalized VCE = 5V
h parameter he = f (VCE) normalized IC = 2mA
10 2 BC 856...860 he 5
10 1 5
1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B
Pin Configuration
2=E
3=C
2=E
3=C
2=E
3=C
2=E
3=C
2=E
3=C
2=E
3=C
2=E
3=C
2=E
3=C
2=E
3=C
2=E
3=C
2=E
3=C
2=E
3=C
2=E
3=C
Package SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23
30
-
-
Collector-base breakdown voltage
V(BR)CBO
IC = 10 µA, IB = 0
BC 856
80
-
-
BC 857/860
50
-
-
BC 858/859
30
-
-
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu
Transition frequency IC = 20 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz

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BC847PN-7-F中文资料

BC847PN-7-F中文资料

PbLead-freeMaximum Ratings PNP BC857B Section@ T A = 25°C unless otherwise specified BC847PNCOMPLEMENTARY PAIR SMALL SIGNAL SURFACEMOUNT TRANSISTORFeaturesMaximum Ratings NPN BC847B Section@ T A = 25°C unless otherwise specified•Epitaxial Die Construction•Two Internally Isolated NPN/PNP Transistors in one package •Ultra-Small Surface Mount Package •Lead Free/RoHS Compliant (Note 2)•Qualified to AEC-Q101 Standards for High ReliabilityMechanical DataNotes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layoutdocument AP02001, which can be found on our website at /datasheets/ap02001.pdf. 2. No purposefully added lead.•Case: SOT-363•Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0•Moisture Sensitivity: Level 1 per J-STD-020C •Terminals: Solderable per MIL-STD-202, Method 208•Lead Free Plating (Matte Tin Finish annealed over Alloy 42leadframe).•Terminal Connections: See Diagram •Marking (See Page 3): K7P •Ordering Information: See Page 2•Weight: 0.006 grams (approximate)Thermal CharacteristicsElectrical Characteristics NPN BC847B Section@ T A = 25°C unless otherwise specifiedElectrical Characteristics PNP BC857B Section@ T A = 25°C unless otherwise specified Ordering Information(Note 4)Notes: 3. Short duration pulse test used to minimize self-heating effect.4. For Packaging Details, go to our website at /datasheets/ap02007.pdf.Date Code Key K7P = Product Type Marking Code YM = Date Code Marking Y = Year ex: T = 2006M = Month ex: 9 = September1010010000.1 1.010100f , G A I N B A N D W I D T H P R O D U C T (M H z )T I , COLLECTOR CURRENT (mA)C Fig. 4, Gain Bandwidth Product vs Collector Current (BC847B)T = 25°CA V = 10VCE V = 5VCE V = 2VCE 00.10.20.30.40.50.11.010100V , C O L L E C T O R -E M I T T E R CE S A T U R A T I O N V O L T A G E (V )I , COLLECTOR CURRENT (mA)C Fig. 3, Collector Saturation Voltage vs Collector Current (BC847B)11010010001.0101000.10.01h D C C U R R E N T G A I N F E ,I , COLLECTOR CURRENT (mA)C Fig. 2, DC Current Gain vs Collector Current (BC847B)50100150200250P , P O W E R D I S S I P A T I O N (m W )d T , AMBIENT TEMPERATURE (°C)A Fig. 1, Power Derating Curve (Total Device)Marking Information10.1101001000V , C O L L E C T O R T O E M I T T E R C E (S A T ) S A T U R A T I O N V O L T A G E (V )I , COLLECTOR CURRENT (mA)C Fig. 5, Collector Emitter Saturation Voltagevs. Collector Current (BC857B)00.10.20.30.40.511010010001101001000h , D C C U R R E N T G A I N F E I , COLLECTOR CURRENT (mA)C Fig. 6, DC Current Gain vs. Collector Current (BC857B)101001000110100f , G A I N B A N D W I D T H P R O D U C T (M H z )t I , COLLECTOR CURRENT (mA)C Fig. 7, Gain Bandwidth Product vs Collector Current (BC857B)V = 5VCE IMPORTANT NOTICEDiodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages.LIFE SUPPORTDiodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated.。

BC858贴片三极管规格书

BC858贴片三极管规格书

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTDSOT-23 Plastic-Encapsulate TransistorsBC856A, B TRANSISTOR (PNP)BC857A, B,CBC858A, B,CFEATURESy Ideally suited for automatic insertiony For Switching and AF Amplifier ApplicationsMAXIMUM RATINGS (T a =25℃ unless otherwise noted) Symbol Parameter ValueUnit VCBO Collector-Base Voltage BC856 BC857 BC858-80-50 -30VV CEO Collector-Emitter Voltage BC856 BC857 BC858-65-45 -30VV EBO Emitter-Base Voltage -5 VI C Collector Current –Continuous -0.1 AP C Collector Power Dissipation 200 mWT J Junction Temperature 150 ℃T stg Storage Temperature -65-150 ℃DEVICE MARKINGBC856A=3A; BC856B=3B;BC857A=3E;BC857B=3F;BC857C=3G;BC858A=3J; BC858B=3K; BC858C=3LB,Jul,2013ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) ParameterSymbol Test conditions Min Max UnitCollector-base breakdown voltage BC856 BC857 BC858 V CBO I C = -10μA, I E =0 -80 -50 -30 V Collector-emitter breakdown voltage BC856 BC857 BC858 V CEO I C = -10mA, I B =0 -65 -45 -30 V Emitter-base breakdown voltageV EBO I E = -1μA, I C =0 -5 V Collector cut-off current BC856 BC857 BC858 I CBO V CB = -70 V ,I E =0 V CB = -45 V ,I E =0 V CB = -25 V ,I E =0 -0.1 μA Collector cut-off current BC856 BC857 BC858 I CEO V CE = -60 V ,I B =0 V CE = -40 V ,I B =0 V CE = -25 V ,I B =0 -0.1 μA Emitter cut-off currentI EBO V EB = -5 V , I C =0 -0.1 μA DC current gain BC856A, 857A,858A BC856B, 857B,858B BC857C,BC858C h FE V CE = -5V,I C = -2mA 125 220 420 250 475 800 Collector-emitter saturation voltageV CE (sat) I C =-100mA,I B = -5 mA -0.5 V Base-emitter saturation voltageV BE (sat) I C = -100mA, I B = -5mA -1.1 V Transition frequencyf T V CE = -5 V, I C = -10mA f=100MHz 100 MHz Collector capacitance C ob V CB =-10V, f=1MHz 4.5 pFB,Jul,2013101000255075100125150050100150200250101001000-0.1-1V CB / V EBC ob / C ib ——CA P A C I T AN C E C (p F )REVERSE VOLTAGE V R (V) T R A N S I T I O N F R E Q U E N C Y f T (M H z )COLLECTOR CURRENT I C (mA)P C —— T a C O L L E C T O R P O W E R D I S S I P A T I O N P C (m W )AMBIENT TEMPERATURE T a ()℃Static CharacteristicCO L L E C T O R C U R R E N T I C(m A )COLLECTOR-EMITTER VOLTAGE V CE (V)I C D C C U R R E N T G A I N h F E COLLECTOR CURRENT I C (mA)I C f T ——h FE ——I V BEsat —— B A S E -E M I T T E R S A T U R A T I O N V O L T A G E V B E s a t (V )COLLECTOR CURRENT I C (mA)-2BC856,BC857,BC858Typical CharacterisiticsV BEI C ——C O L L E C T O R C U R R E N T I C(m A )BASE-EMMITER VOLTAGE V BE (V)ICV CEsat ——CO L L E C T O R -E M I T T E R S A T U R A T I O N V O LTA GE V C Esat(V )COLLECTOR CURRENT I C (mA)B,Jul,2013 【南京南山半导体有限公司 — 长电三极管选型资料】The bottom gasketThe top gasket3000×1 PCS 3000×15 PCS Label on the Reel Label on the Inner Box Label on the Outer Box QA Label Seal the boxwith the tape Seal the boxwith the tape Stamp “EMPTY”on the empty box Inner Box: 210 mm × 208 mm ×203 mm Outer Box: 440 mm × 440 mm × 230 mm。

BC847BS,115;BC847BS,135;中文规格书,Datasheet资料

BC847BS,115;BC847BS,135;中文规格书,Datasheet资料


[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
BC847BS_3
Product data sheet
/
Rev. 03 — 18 February 2009
© NXP B.V. 2009. All rights reserved.
5 of 12
PNP/PNP complement: BC857BS.
1.2 Features
I Low collector capacitance I Low collector-emitter saturation voltage I Closely matched current gain I Reduces number of components and board space I No mutual interference between the transistors
103
Zth(j-a) (K/W)
102
δ=1 0.50 0.20
0.75 0.33
0.10
0.05 0.02
10 0.01
0
006aab421
1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
Fig 3.
FR4 PCB, mounting pad for collector 1 cm2
current
-
-
15
nA
-
-
5
µA
-
-
100 nA
hFE
DC current gain
VCE = 5 V; IC = 2 mA
BC856B中文资料

BC856B中文资料


handbook, halfpage
500
MGT711
handbook, halfpage
hFE 400
(1)
− 1200 VBE (mV) − 1000 − 800
MGT712
(1)
300 − 600 200
(2)
(2)
− 400 100
(3)
(3)
− 200
0 − 10−2
− 10−1
−1
− 10
DISCRETE SEMICONDUCTORS
DATA SHEET
BC856; BC857; BC858 PNP general purpose transistors
Product specification Supersedes data of 2003 Apr 09 2004 Jan 16
Philips Semiconductors
BC857B; VCE = −5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C.
BC857B; VCE = −5 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C.
Fig.2
DC current gain as a function of collector current; typical values.
Fig.3
Base-emitter voltage as a function of collector current; typical values.
− 104 handbook, halfpage VCEsat (mV) − 103