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BC807-40LT1G中文资料

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BC807−16LT1,BC807−25LT1, BC807−40LT1 General Purpose TransistorsPNP SiliconFeatures•Pb−Free Packages are AvailableMAXIMUM RATINGSMaximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.THERMAL CHARACTERISTICS2.Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.ORDERING INFORMATIONELECTRICAL CHARACTERISTICS (T= 25°C unless otherwise noted.)ON CHARACTERISTICSSMALL−SIGNAL CHARACTERISTICSDEVICE ORDERING INFORMATIONI C , COLLECTOR CURRENT (mA)Figure 1. DC Current Gainh F E , D C C U R R E N T G A I N100010100I B , BASE CURRENT (mA)Figure 2. Saturation Region I C , COLLECTOR CURRENT (mA)Figure 3. “On” Voltages100101.0V R , REVERSE VOLTAGE (VOLTS)Figure 4. Temperature Coefficients +1.0I C , COLLECTOR CURRENTFigure 5. Capacitances−2.0−1.0V C E , C O L L E C T O R −E M I T T E R V O L T A G E (V O L T S )V , V O L T A G E (V O L T S )V , T E M P E R A T U R E C O E F F I C I E N T S (m V /C )°θC , C A P A C I T A N C E (p F )−1.0−0.8−0.6−0.4−0.20−1.0−0.8−0.6−0.4−0.2PACKAGE DIMENSIONSSOT−23 (TO−236)CASE 318−09ISSUE AI*For additional information on our Pb−Free strategy and solderingdetails, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.SOLDERING FOOTPRINT*ǒmm inchesǓSCALE 10:1DIM A MIN MAX MIN MAX MILLIMETERS 0.11020.1197 2.80 3.04INCHES B 0.04720.0551 1.20 1.40C 0.03850.04980.99 1.26D 0.01400.02000.360.50G 0.06700.0826 1.70 2.10H 0.00400.00980.100.25J 0.00340.00700.0850.177K 0.01800.02360.450.60L 0.03500.04010.89 1.02S 0.08300.0984 2.10 2.50V0.01770.02360.450.60NOTES:1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.2.CONTROLLING DIMENSION: INCH.3.MAXIUMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.4.318−01, −02, AND −06 OBSOLETE, NEW STANDARD 318−09.V STYLE 6:PIN 1.BASE2.EMITTER3.COLLECTORON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.PUBLICATION ORDERING INFORMATION。

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BC807-25LT1中文资料

BC807-25LT1中文资料

DC Current Gain (IC = –100 mA, VCE = –1.0 V) hFE BC807–16 BC807–25 BC807–40 VCE(sat) VBE(on) 100 160 250 40 — — — — — — — — 250 400 600 — –0.7 –1.2 V V —
0.037 0.95
0.037 0.95
0.079 2.0 0.035 0.9 0.031 0.8
inches mm
SOT–23 SOT–23 POWER DISSIPATION
The power dissipation of the SOT–23 is a function of the pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by T J(max), the maximum rated junction temperature of the die, RθJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA . Using the values provided on the data sheet for the SOT–23 package, PD can be calculated as follows: PD = TJ(max) – TA RθJA
BC80740中文资料

BC80740中文资料

PNP Epitaxial Silicon TransistorAbsolute Maximum Ratings T a =25°C unless otherwise notedElectrical Characteristics T a =25°C unless otherwise notedSymbol ParameterValue Units V CESCollector-Emitter Voltage: BC807 : BC808-50-30V V V CEOCollector-Emitter Voltage: BC807: BC808-45-25V V V EBO Emitter-Base Voltage -5V I C Collector Current (DC)-800mA P C Collector Power Dissipation -310mW T J Junction Temperature 150°C T STGStorage Temperature-65 ~ 150°CSymbol ParameterTest Condition Min.Typ.Max.Units BV CEOCollector-Emitter Breakdown Voltage: BC807: BC808I C = -10mA, I B =0-45-25V V BV CES Collector-Emitter Breakdown Voltage: BC807: BC808I C = -0.1mA, V BE =0-50-30V V BV EBO Emitter-Base Breakdown Voltage I E = -0.1mA, I C =0-5V I CES Collector Cut-off Current V CE = -25V, V BE =0-100nA I EBO Emitter Cut-off Current V EB = -4V, I C =0-100nAh FE1h FE2DC Current GainV CE = -1V, I C = -100mA V CE = -1V, I C = -300mA 10060630V CE (sat)Collector-Emitter Saturation Voltage I C = -500mA, I B = -50mA -0.7V V BE (on)Base-Emitter On Voltage V CE = -1V, I C = -300mA -1.2V f T Current Gain Bandwidth Product V CE = -5V, I C = -10mA f=50MHz100MHz C obOutput CapacitanceV CB = -10V, f=1MHz12pFSwitching and Amplifier Applications•Suitable for AF-Driver stages and low power output stages •Complement to BC817/BC818SOT-231. Base2. Emitter3. Collector123Type807-16807-25807-40808-16808-25808-40 Marking9FA9FB9FC9GA9GB9GCBC807/BC808TRADEMARKSThe following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONS Definition of TermsDatasheet Identification Product Status DefinitionAdvance InformationFormative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.PreliminaryFirst ProductionThis datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.No Identification Needed Full ProductionThis datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.Obsolete Not In ProductionThis datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.FACT™FACT Quiet series™FAST ®FASTr™FRFET™GlobalOptoisolator™GTO™HiSeC™I 2C™ImpliedDisconnect™ISOPLANAR™LittleFET™MicroFET™MicroPak™MICROWIRE™MSX™MSXPro™OCX™OCXPro™OPTOLOGIC ®OPTOPLANAR™PACMAN™POP™Power247™PowerTrench ®QFET™QS™QT Optoelectronics™Quiet Series™RapidConfigure™RapidConnect™SILENT SWITCHER ®SMART START™SPM™Stealth™SuperSOT™-3SuperSOT™-6SuperSOT™-8SyncFET™TinyLogic™TruTranslation™UHC™UltraFET ®VCX™ACEx™ActiveArray™Bottomless™CoolFET™CROSSVOLT ™DOME™EcoSPARK™E 2CMOS™EnSigna™Across the board. Around the world.™The Power Franchise™Programmable Active Droop™。

BC807 PDF规格书

BC807 PDF规格书

- 280 (mA) - 240 - 200 - 160 - 120 - 80 - 40 IB=-0.1mA
0 0
Static Characteristic
COMMON -0.9mA EMITTER Ta=25℃ -0.8mA -0.7mA -0.6mA -0.5mA -0.4mA -0.3mA -0.2mA -1mA
- 500 - 400 hFE Ta=100 C
o
hFE —— IC
IC
COLLECTOR CURRENT
DC CURRENT GAIN
- 300 Ta=25 C
o
- 200
VCE= -1V - 100 - 1 - 10 COLLECTOR CURRENT - 100 IC (mA)
- 500
- 2
Pc
——
Ta
(MHz)
0.3
fT TRANSITION FREQUENCY
100
0.2
0.1
VCE=-5V Ta=25 C
10
o
-1
- 10 COLLECTOR CURRENT IC (mA)
- 60
0.0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE
Ta
(℃)
Parameter Collector - Base Voltage Collector - Emittege Collector Current - Continuous Collector Power Dissipation Junction Temperature Storage Temperature range Symbol VCBO VCEO VEBO IC PC TJ Tstg Rating -50 -45 -5 -0.5 0.3 150 -55 to 150 A W ℃ V Unit
BC807贴片三极管规格书

BC807贴片三极管规格书

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTDSOT-23 Plastic-Encapsulate TransistorsBC807-16 TRANSISTOR (PNP) BC807-25 BC807-40 FEATURELdeally suited for automatic insertionEpitaxial planar die construction Complementary NPN type available(BC817)a ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) ParameterSymbol Test conditions Min Max Unit Collector-base breakdown voltageV CBO I C = -10μA, I E =0 -50 V Collector-emitter breakdown voltageV CEO I C = -10mA, I B =0 -45 V Emitter-base breakdown voltageV EBO I E = -1μA, I C =0 -5 V Collector cut-off currentI CBO V CB = -45V, I E =0 -0.1 μA Collector cut-off currentI CEO V CE = -40V, I B =0 -0.2 μA Emitter cut-off currentI EBO V EB = -4 V, I C =0 -0.1 μA DC current gain h FE(2) h FE(1) V CE = -1V, I C = -100mA 100 600 Collector-emitter saturation voltage V CE (sat)I C =-500mA, I B = -50mA -0.7 V Base-emitter saturation voltage V BE (sat)I C = -500mA, I B = -50mA -1.2 V Transition frequencyf T V CE = -5V, I C = -10mA f=100MHz 100 MHzV CE = -1V, I C = -500mA 40CLASSIFICATION OF h FE (1)RankBC807-16 BC807-25 BC807-40 Range100-250 160-400 250-600 Marking 5A 5B 5CC,Apr,2013 【南京南山半导体有限公司 — 长电贴片三极管选型资料】1100255075100125150BC807Typical Characteristics COLLECTOR CURRENT I C (mA)I h —— AMBIENT TEMPERATURE T a ()℃C,Apr,2013 【南京南山半导体有限公司 — 长电三极管选型资料】The bottom gasketThe top gasket3000×1 PCS 3000×15 PCS Label on the Reel Label on the Inner Box Label on the Outer Box QA Label Seal the boxwith the tape Seal the boxwith the tape Stamp “EMPTY”on the empty box Inner Box: 210 mm × 208 mm ×203 mm Outer Box: 440 mm × 440 mm × 230 mm。