BC817-40
- 格式：pdf
- 大小：51.09 KB
- 文档页数：8
IC = 500 mA; VCE = 1 V; note 2
collector capacitance
IE = ie = 0; VCB = 10 V; f = 1 MHz;
transition frequency
IC = 10 mA; VCE = 5 V; f = 100 MHz;
Notes 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 2. VBE decreases by approx. 2 mV/K with increasing temperature.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
BC817-25
BC817-40
hFE VCEsat VBE Cc fT
DC current gain
IC = 500 mA; VCE = 1 V; note 1
collector-emitter saturation voltage IC = 500 mA; IB = 50 mA; note 1
base-emitter voltage
Philips Semiconductors
NPN general purpose transistor
Product specification
BC817
FEATURES • High current (max. 500 mA) • Low voltage (max. 45 V).
APPLICATIONS • General purpose switching and amplification.
BC817
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
NPN general purpose transistor
Product specification
BC817
500
handbook, full pagewidth
hFE 400
300
200
100
0 10−1 BC817-40.
MBH722
VCE = 1 V
1
10
102
IC (mA)
103
Fig.4 DC current gain; typical values.
hFE
DC current gain
BC817
IE = 0; VCB = 20 V IE = 0; VCB = 20 V; Tj = 150 °C IC = 0; VEB = 5 V IC = 100 mA; VCE = 1 V; note 1; see Figs 2, 3 and 4
BC817-16
CONDITIONS note 1
VALUE 500
UNIT K/W
CHARACTERISTICS Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
ICBO
collector cut-off current
IEBO
emitter cut-off current
3.0 2.8
1.4 1.2
1.9
0.95
2.5 2.1
0.45 0.55 0.15 0.45
0.2
0.1
OUTLINE
VER1999 Jun 01
REFERENCES
JEDEC
EIAJ
6
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
Philips Semiconductors
1999 Jun 01
7
Philips Semiconductors – a worldwide company
Argentina: see South America
Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466
3
1
1
Top view
2 2
MAM255
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
MBH721
VCE = 1 V
1
10
102
IC (mA)
103
Fig.2 DC current gain; typical values.
MBH720
VCE = 1 V
1
10
102
IC (mA)
103
Fig.3 DC current gain; typical values. 4
Philips Semiconductors
MAX. 50 45 5 500 1 200 250 +150 150 +150
UNIT
V V V mA A mA mW °C °C °C
1999 Jun 01
2
Philips Semiconductors
NPN general purpose transistor
Product specification
D
B
E
A
X
3
1
e1
bp
e
2
wM B
HE
vM A
A A1
Q
c Lp detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1 max.
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1 0.9
0.1
0.48 0.38
0.15 0.09
VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb
PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature
MARKING CODE(1)
6D∗ 6A∗
TYPE NUMBER
BC817-25 BC817-40
Note
1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia.
