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BC337_05中文资料

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THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient
RqJA
200
°C/W
Thermal Resistance, Junction−to−Case
RqJC
83.3
°C/W

BC337 BC337−16 BC337−25/BC338−25 BC337−40
Base−Emitter On Voltage (IC = 300 mA, VCE = 1.0 V)
Collector −Emitter Saturation Voltage (IC = 500 mA, IB = 50 mA)
SMALL−SIGNAL CHARACTERISTICS
Output Capacitance (VCB = 10 V, IE = 0, f = 1.0 MHz)
Current −Gain − Bandwidth Product (IC = 10 mA, VCE = 5.0 V, f = 100 MHz)
元器件交易网
BC337, BC337−16, BC337−25, BC337−40, BC338−25
Amplifier Transistors
NPN Silicon
Features
• Pb−Free Packages are Available*
MAXIMUM RATINGS
dc TC = 25°C
dc
100
TA = 25°C
100
hFE, DC CURRENT GAIN
IC, COLLECTOR CURRENT (mA)
10 1.0
CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT (APPLIES BELOW RATED VCEO)
TO−92 (Pb−Free)
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS
1.0 TJ = 25°C
0.8
0.6
0.4
IC = 10 mA
100 mA 300 mA
500 mA
0.2
0
0.01
0.1
1
10
100
IB, BASE CURRENT (mA)
Figure 4. Saturation Region
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
1
September, 2005 − Rev. 5
Publication Order Number: BC337/D
元器件交易网 BC337, BC337−16, BC337−25, BC337−40, BC338−25
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Rating
Symbol BC337 BC338 Unit
Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous Total Device Dissipation
Emitter Cutoff Current (VEB = 4.0 V, IC = 0)
ON CHARACTERISTICS
DC Current Gain (IC = 100 mA, VCE = 1.0 V)
(IC = 300 mA, VCE = 1.0 V)
BC337 BC338
BC337 BC338
ORDERING INFORMATION Device
Package
Marking
Shipping†
BC337
TO−92
7
5000 Units / Box
BC337G
TO−92 (Pb−Free)
7
5000 Units / Box
BC337RL1
TO−92
7
2000 / Tape & Reel
BC337RL1G
Symbol V(BR)CEO V(BR)CES V(BR)EBO
ICBO ICES IEBO hFE
VBE(on) VCE(sat)
Cob fT
Min
Typ
Max Unit
45
−
25
−
50
−
30
−
5.0
−
Vdc − −
Vdc − −
−
Vdc
nAdc
−
−
100
−
−
100
nAdc−Leabharlann −100−
−
100
−
100 10 1
0.1
Cib Cob
1
10
100
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitances
3
元器件交易网 BC337, BC337−16, BC337−25, BC337−40, BC338−25
TO−92 (Pb−Free)
7
2000 / Tape & Reel
BC337ZL1
TO−92
7
2000 / Ammo Box
BC337ZL1G
TO−92 (Pb−Free)
7
2000 / Ammo Box
BC337−16
TO−92
7−16
5000 Units / Box
BC337−16G
TO−92 (Pb−Free)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 10 mA, IB = 0) BC338
BC337
Collector −Emitter Breakdown Voltage (IC = 100 mA, IE = 0)
5.0 10 20
50 100
2
元器件交易网 BC337, BC337−16, BC337−25, BC337−40, BC338−25
1000
1000
1.0 s
1.0 ms
TJ = 135°C
VCE = 1 V
100 ms
TJ = 25°C
3.0
10
30
VCE, COLLECTOR−EMITTER VOLTAGE
10
100
0.1
Figure 2. Active Region − Safe Operating Area
1.0
10
100
1000
IC, COLLECTOR CURRENT (MA)
Figure 3. DC Current Gain
@ TA = 25°C Derate above 25°C
VCEO VCBO VEBO
IC PD
45
25
50
30
5.0
800
625 5.0
Vdc Vdc Vdc mAdc mW mW/°C
Total Device Dissipation @ TC = 25°C Derate above 25°C
PD
0.1
0.1 0.05 0.07 0.02
0.05
0.03
0.01
0.02
SINGLE PULSE SINGLE PULSE
0.01 0.001 0.002
0.005 0.01 0.02
P(pk)
t1 t2
DUTY CYCLE, D = t1/t2
0.05 0.1 0.2
0.5 1.0 2.0
t, TIME (SECONDS)
−
100 nAdc
−
100
−
630
100
−
250
160
−
400
250
−
630
60
−
−
−
−
1.2
Vdc
−
−
0.7
Vdc
−
15
−
pF
−
210
−
MHz
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1.0
0.7
D = 0.5
0.5
0.3
0.2
0.2
V, VOLTAGE (VOLTS)
1.0 TA = 25°C
0.8
0.6
VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 1 V
0.4
0.2
VCE(sat) @ IC/IB = 10
0
1
10
100
1000
IC, COLLECTOR CURRENT (mA)
Figure 5. “On” Voltages

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BC337-25-AP中文资料

BC337-25-AP中文资料

BC337-25BC337-40SMALL SIGNAL NPN TRANSISTORSPRELIMINARY DATAsSILICON EPITAXIAL PLANAR NPN TRANSISTORSsTO-92 PACKAGE SUITABLE FOR THROUGH-HOLE PCB ASSEMBLYsTHE PNP COMPLEMENTARY TYPES ARE BC327-25 AND BC327-40 RESPECTIVELYAPPLICATIONS s WELL SUITABLE FOR TV AND HOME APPLIANCE EQUIPMENTs SMALL LOAD SWITCH TRANSISTORS WITH HIGH GAIN AND LOW SATURATION VOLTAGE®March 2003ABSOLUTE MAXIMUM RATINGS1/5BC337-25 / BC337-40THERMAL DATAC unless otherwise specified)ELECTRICAL CHARACTERISTICS (T case = 25 oBC337-25 / BC337-40BC337-25 / BC337-40Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.The ST logo is a trademark of STMicroelectronics © 2003 STMicroelectronics – Printed in Italy – All Rights ReservedSTMicroelectronics GROUP OF COMPANIESAustralia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.BC337-25 / BC337-40。

DTC143TS3中文资料

DTC143TS3中文资料

N*2 N*2 N*2 N*2 P*2 P*2 P*2 P*2 N+P 50 60 75 40 -40 -60 -40 -60 75 -60 60 -40 40 40 40 40 -32 -50 -40 -60 40 -60 40 -40 150 200 600 600 500 150 200 600 600 600 200 200 200 200 200 200 200 200 200 200 200 200 200 200 120 100 100 82 100 120 100 100 100 100 100 100 820 300 300 560 300 820 300 300 300 300 300 300 1 10 150 100 -150 -1 -10 -150 150 -150 10 -10 6 1 10 3 -10 -6 -1 -10 10 -10 1 -1 0.4 0.2 0.5 0.4 -0.4 -0.5 -0.25 -0.4 0.3 -0.4 0.2 -0.25 1 10 150 100 -150 -1 -10 -150 150 -150 10 -10 5 1 10 10 -15 -5 -1 -15 15 -15 1 -1 180 300 300 300 200 140 250 200 300 200 300 250
BCE BCE BCE BCE BCE BCE BCE BCE DAUL DAUL DAUL DAUL DAUL DAUL DAUL DAUL
N+P
SOT-363 (P.29)
MMDT2412 MMDT3904 MMDT2222 MMDT2411 MMDT1036 MMDT1037 MMDT3906 MMDT2907 MMDT2227 MMDT3946
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BC337

BC337

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate TransistorsBC337/BC338 TRANSISTOR (NPN)FEATURESPower dissipationMAXIMUM RATINGS (T a =25℃ unless otherwise noted)ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified)ParameterSymbolTest conditionsMINTYPMAXUNITCollector-base breakdown voltage BC337 BC338 V CBOI C = 100uA, I E =050 30 V V Collector-emitter breakdown voltage BC337 BC338 V CEO I C = 10mA , I B =045 25 V V Emitter-base breakdown voltage V EBO I E = 10uA, I C =0 5 VCollector cut-off current BC337 BC338 I CBO V CB = 45V, I E =0V CB = 25V, I E =00.1 0.1 uA Collector cut-off current BC337 BC338 I CEO V CE = 40V, I B =0V CE = 20V, I B =00.2 0.2 uA Emitter cut-off current I EBO V EB = 4 V, I C =0 0.1 uABC337/BC338BC337-16/BC338-16 BC337-25/BC338-25 BC337-40/BC338-40 h FE(1) V CE =1V, I C = 100mA100100160250630 250 400 630 DC current gainh FE(2) V CE =1V, I C = 300mA 60 Collector-emitter saturation voltage V CE(sat) I C =500mA, I B = 50mA 0.7 V Base-emitter saturation voltage V BE(sat) I C = 500mA, I B =50mA 1.2 V Base-emitter voltage V BEV CE =1V, I C = 300mA 1.2 V Transition frequencyf TV CE = 5V, I C = 10mAf = 100MHz 210 MHzCollector Output CapacitanceCobV CB =10V,I E =0f=1MHZ15 pFTO-921. COLLECTOR2.BASE3. EMITTERB,Jun,20122550751001251500501001502002503003504004505005506006501101001000050100150200250I CC O L L E C T O R P O W E RD I S S I P A T I O NP C (m W )AMBIENT TEMPERATURE T a ()℃BC337Typical CharacterisiticsC O L L E C T O R -E M I T T E R S A T U R A T I O NV O L T A G E V C E s a t (m V )Static CharacteristicC O L L E C T O R C U R R E N T I C (m A )h FE ——10100T R A N S I T I O N F R E Q U E N C Y f T (M H z ) 【南京南山半导体有限公司 — 长电三极管选型资料】 【南京南山半导体有限公司 — 长电三极管选型资料】Sponge strip2000 pcsSponge strip The top gasketLabel on the Inner BoxPlastic bagLabel on the Outer BoxInner Box: 333 mm ×162mm ×43mmOuter Box: 350 mm × 340mm × 250mmQA LabelSeal the box with the tapeStamp “EMPTY” on the empty boxInner Box: 240 mm ×165mm ×９５mmLabel on the Inner BoxOuter Box: 525 mm × 360mm × 262mmLabel on the Outer BoxQA LabelSeal the box with the tapeStamp “EMPTY” on the empty box。

BC337A资料

BC337A资料

BC337A — NPN Medium Power TransistorSeptember 2007BC337ANPN Medium Power Transistor•This device is designed for general purpose amplifier application at collector currents to 800mA.•Sourced from process 38.Absolute Maximum Ratings T C =25°C unless otherwise noted* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.NOTES :1) These ratings are based on a maximum junction temperature of 150 degrees C.2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.Thermal Characteristics T a =25°C unless otherwise noted*Device mounted on FR-4 PCB 1.6” X 1.6” X 0.06”.Electrical Characteristics T C =25°C unless otherwise notedNotes:1.These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.2.These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.3.These ratings are based on a maximum junction temperature of 150degrees C.SymbolParameter ValueUnitsV CEO Collector-Emitter Voltage 60V V CES Collector-Emitter Voltage 60V V EBO Emitter-Base Voltage 5V I C Collector Current (DC)800mA T J , T STGOperating and Storage Junction Temperature Range-55 ~ 150°CSymbolParameter Max.UnitsP D Total Device Dissipation Derate above 25°C6255.0mW mW/°C R θJC Thermal Resistance, Junction to Case 83.3°C/W R θJAThermal Resistance, Junction to Ambient200°C/WSymbolParameterTest ConditionMin.Typ.Max.UnitsBV CEO Collector-Emitter Breakdown Voltage I C = 10mA 60V BV CES Collector-Emitter Cutoff Voltage I C = 100μA 60V BV EBO Emitter-Base Breakdown Voltage I E = 100μA 5VI EBO Emitter Cut-off Current V EB = 5V10μA I CBO Collector Cut-off Current V CB = 20V, T = 25 °C T = 150 °C 0.15μAh FE DC Current GainV CE = 1V, I C = 100mA V CE = 1V, I C = 500mA 10040400V CE (sat)Collector-Emitter Saturation Voltage I C = 500 mA, I B = 50 mA 0.7V V BE (on)Base-Emitter On VoltageV CE = 5V, I C = 2mA1.2V1. Collector2. Base3. EmitterTO-921BC337A NPN Medium Power TransistorBC337ATRADEMARKSThe following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use andis not intended to be an exhaustive list of all such trademarks.DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:1. Life support devices or systems are devices or systemswhich, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.2.A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONS Definition of Terms ACEx ®Build it Now™CorePLUS™CROSSVOLT ™CTL™Current Transfer Logic™EcoSPARK ®Fairchild ®Fairchild Semiconductor ®FACT Quiet Series™FACT ®FAST ®FastvCore™FPS™FRFET ®Global Power Resource SMGreen FPS™Green FPS™ e-Series™GTO™i-Lo ™IntelliMAX™ISOPLANAR™MegaBuck™MICROCOUPLER™MicroFET™MicroPak™Motion-SPM™OPTOLOGIC ®OPTOPLANAR ®®PDP-SPM™Power220®Power247®POWEREDGE ®Power-SPM™PowerTrench ®Programmable Active Droop™QFET ®QS™QT Optoelectronics™Quiet Series™RapidConfigure™SMART START™SPM ®STEALTH™SuperFET™SuperSOT™-3SuperSOT™-6SuperSOT™-8SyncFET™The Power Franchise ®TinyBoost™TinyBuck™TinyLogic ®TINYOPTO™TinyPower™TinyPWM™TinyWire™µSerDes™UHC ®UniFET™VCX™Datasheet Identification Product Status DefinitionAdvance InformationFormative or In DesignThis datasheet contains the design specifications for product development. Specifications may change in any manner without notice.Preliminary First ProductionThis datasheet contains preliminary data; supplementary data will be pub-lished at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.No Identification Needed Full ProductionThis datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In ProductionThis datasheet contains specifications on a product that has been discontin-ued by Fairchild semiconductor. The datasheet is printed for reference infor-mation only.Rev. I30。