SI5504BDC-T1-E3;中文规格书,Datasheet资料

Vishay SiliconixSi5504BDC

Document Number: 74483S10-0547-Rev. B, 08-Mar-10www.vishay.com1N- and P-Channel 30 V (D-S) MOSFETPRODUCT SUMMARY VDS (V)RDS(on) (Ω)ID (A)Qg (Typ)N-Channel300.065 at VGS = 10 V 4a2 nC0.100 at VGS = 4.5 V 4aP-Channel- 300.140 at VGS = - 10 V - 3.72.2 nC0.235 at VGS = - 4.5 V - 2.8Marking CodeEFXXXLot Traceabilityand Date CodePart #CodeN-Channel MOSFETG1D1S1S2G2D2P-Channel MOSFETBottom View1206-8 ChipFETS1G1S2G2D1D1D2D21DualOrdering Information: Si5504BDC-T1-E3 (Lead (Pb)-free) Si5504BDC-T1-GE3 (Lead (Pb)-free and Halogen-free)Notes: a.Package limited.b.Surface mounted on 1" x 1" FR4 board.c.t = 5 s.d.See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a resultof the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensureadequade bottom side solder interconnection.e.Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f.Maximum under steady state conditions is 120 °C/W.ABSOLUTE MAXIMUM RATINGS TA = 25°C, unless otherwise notedParameter Symbol N-ChannelP-ChannelUnit Drain-Source Voltage VDS30- 30VGate-Source Voltage VGS± 20Continuous Drain Current (TJ = 150 °C)TC = 25 °CID4a- 3.7AT

C = 85 °C3.8- 2.7TA = 25 °C3.7b, c- 2.5b, cTA = 85 °C2.6b, c- 1.8b, cPulsed Drain CurrentIDM10- 10Source Drain Current Diode CurrentTC = 25 °CIS2.5- 2.5TA = 25 °C1.3b, c- 1.3b, cMaximum Power DissipationTC = 25 °CPD3.123.1WTC = 85 °C22TA = 25 °C1.5b, c1.5b, cTA = 85 °C0.8b, c0.8b, cOperating Junction and Storage Temperature Range TJ, Tstg- 55 to 150°CSoldering Recommendations (Peak Temperature)d, e 260THERMAL RESISTANCE RATINGS Parameter Symbol N-ChannelP-ChannelUnit Typ.Max.Typ.Max.Maximum Junction-to-Ambientb, ft ≤ 5 sRthJA70857085°C/WMaximum Junction-to-Foot (Drain)Steady StateRthJF33403340FEATURES •Halogen-free According to IEC 61249-2-21Definition •TrenchFET® Power MOSFETs •Compliant to RoHS Directive 2002/95/ECAPPLICATIONS •DC/DC for Portable Applications •Load Switch

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Notes:a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. SPECIFICATIONS TJ = 25°C, unless otherwise notedParameter Symbol Test Conditions Min.Typ.Max.Unit StaticDrain-Source Breakdown VoltageVDSVGS = 0 V, ID = 250 µA N-Ch30VVGS = 0 V, ID = - 250 µA P-Ch- 30VDS Temperature CoefficientΔVDS/TJID = 250 µA N-Ch27mV/°CID = - 250 µA P-Ch- 30VGS(th) Temperature CoefficientΔVGS(th)/TJID = 250 µA N-Ch- 5ID = - 250 µA P-Ch3.5Gate Threshold VoltageVGS(th) VDS = VGS, ID = 250 µA N-Ch1.53VVDS = VGS, ID = - 250 µA P-Ch- 1.5- 3Gate-Body LeakageIGSSVDS = 0 V, VGS = ± 20 V N-Ch 100 nAP-Ch - 100 Zero Gate Voltage Drain CurrentIDSSVDS = 30 V, VGS = 0 V N-Ch1µAVDS = - 30 V, VGS = 0 V P-Ch- 1VDS = 30 V, VGS = 0 V, TJ = 85 °C N-Ch5VDS = - 30 V, VGS = 0 V, TJ = 85 °C P-Ch- 5On-State Drain CurrentbID(on) VDS ≥ 5 V, VGS = 10 V N-Ch10AVDS ≤ - 5 V, VGS = - 10 V P-Ch- 10Drain-Source On-State ResistancebRDS(on) VGS = 10 V, ID = 3.1 A N-Ch0.0530.065ΩVGS = - 10 V, ID = - 2.1 A P-Ch0.1120.140VGS = 4.5 V, ID = 1 A N-Ch0.0810.100VGS = - 4.5 V, ID = - 0.43 A P-Ch0.1880.235Forward Transconductancebgfs VDS = 15 V, ID = 3.1 A N-Ch5SVDS = - 15 V, ID = - 2.1 A P-Ch3.5DynamicaInput CapacitanceCissN-ChannelVDS = 15 V, VGS = 0 V, f = 1 MHz P-ChannelVDS = - 15 V, VGS = 0 V, f = 1 MHzN-Ch220pFP-Ch170Output CapacitanceCossN-Ch50P-Ch50Reverse Transfer CapacitanceCrss N-Ch25P-Ch31Total Gate ChargeQgVDS = 15 V, VGS = 10 V, ID = 3.6 A N-Ch4.57nCVDS = - 15 V, VGS = - 10 V, ID = - 2.5 A P-Ch4.57N-ChannelVDS = 15 V, VGS = 4.5 V, ID = 3.6 A P-ChannelVDS = - 15 V, VGS = - 4.5 V, ID = - 2.5 AN-Ch23P-Ch2.23.5Gate-Source ChargeQgs N-Ch0.7P-Ch0.7Gate-Drain ChargeQgd N-Ch0.7P-Ch1Gate ResistanceRgf = 1 MHzN-Ch3ΩP-Ch13

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Notes:a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operationof the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximumrating conditions for extended periods may affect device reliability.SPECIFICATIONS TJ = 25°C, unless otherwise noted Parameter Symbol Test Conditions Min.Typ.Max.Unit DynamicaTurn-On Delay Timetd(on) N-ChannelVDD = 15 V, RL = 5.8 Ω ID ≅ 2.6 A, VGEN = 4.5 V, Rg = 1 ΩP-ChannelVDD = - 15 V, RL = 7.5 Ω ID ≅ - 2 A, VGEN = - 4.5 V, Rg = 1 ΩN-Ch1525nsP-Ch3045Rise TimetrN-Ch80120P-Ch6090Turn-Off Delay Timetd(off) N-Ch1220P-Ch1015Fall TimetfN-Ch2540P-Ch1015Turn-On Delay Timetd(on) N-ChannelVDD = 15 V, RL = 5.8 Ω ID ≅ 2.6 A, VGEN = 10 V, Rg = 1 ΩP-ChannelVDD = - 15 V, RL = 7.5 Ω ID ≅ - 2 A, VGEN = - 10 V, Rg = 1 ΩN-Ch48P-Ch48Rise TimetrN-Ch1220P-Ch1015Turn-Off Delay Timetd(off) N-Ch1015P-Ch1015Fall TimetfN-Ch510P-Ch510Drain-Source Body Diode CharacteristicsContinuous Source-Drain Diode CurrentISTC = 25 °C N-Ch2.5AP-Ch- 2.5Pulse Diode Forward CurrentaISMN-Ch10P-Ch- 10Body Diode VoltageVSDIS = 2.6 A, VGS = 0 VN-Ch0.81.2VIS = - 2 A, VGS = 0 VP-Ch- 0.8- 1.2Body Diode Reverse Recovery TimetrrN-ChannelIF = 2.6 A, dI/dt = 100 A/µs, TJ = 25 °CP-Channel IF = - 2 A, dI/dt = - 100 A/µs, TJ = 25 °CN-Ch3050nsP-Ch2040Body Diode Reverse Recovery ChargeQrrN-Ch2040nCP-Ch1020Reverse Recovery Fall TimetaN-Ch23nsP-Ch13Reverse Recovery Rise TimetbN-Ch7P-Ch7