SI4963BDY-T1-GE3;中文规格书,Datasheet资料

Vishay SiliconixSi4963BDY

Document Number: 72753S09-0704-Rev. B, 27-Apr-09www.vishay.com1Dual P-Channel 2.5-V (G-S) MOSFETFEATURES •Halogen-free According to IEC 61249-2-21 Definition •Compliant to RoHS Directive 2002/95/ECPRODUCT SUMMARY VDS (V)RDS(on) (Ω)ID (A)- 200.032 at VGS = - 4.5 V - 6.50.050 at VGS = - 2.5 V - 5.2

S1D1G1D1S2D2G2D2SO-85678Top View2341

Ordering Information: Si4963BDY-T1-E3 (Lead (Pb)-free)Si4963BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)S1G1D1P-Channel MOSFETS2G2D2P-Channel MOSFETNotes: a. Surface Mounted on 1" x 1" FR4 board. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm. ABSOLUTE MAXIMUM RATINGS TA = 25°C, unless otherwise notedParameter Symbol 10 sSteady State Unit Drain-Source Voltage VDS- 20VGate-Source Voltage VGS± 12Continuous Drain Current (TJ = 150 °C)aTA = 25 °CID- 6.5- 4.9ATA = 70 °C- 5.2- 3.9Pulsed Drain CurrentIDM

- 40Continuous Source Current (Diode Conduction)aIS- 1.7- 0.9Maximum Power DissipationaTA = 25 °CPD2.01.1WTA = 70 °C1.30.7Operating Junction and Storage Temperature Range TJ, Tstg- 55 to 150°CTHERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit Maximum Junction-to-Ambientat ≤ 10 sRthJA5862.5°C/WSteady State91110Maximum Junction-to-Foot (Drain)Steady StateRthJF3440

http://oneic.com/www.vishay.com2Document Number: 72753S09-0704-Rev. B, 27-Apr-09Vishay SiliconixSi4963BDY

Notes:a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operationof the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximumrating conditions for extended periods may affect device reliability.TYPICAL CHARACTERISTICS 25°C unless otherwise notedSPECIFICATIONS TJ = 25°C, unless otherwise notedParameter Symbol Test Conditions Min.Typ.Max.Unit StaticGate Threshold VoltageVGS(th) VDS = VGS, ID = - 250 µA - 0.6- 1.4VGate-Body LeakageIGSSVDS = 0 V, VGS = ± 12 V ± 100 nAZero Gate Voltage Drain CurrentIDSSVDS = - 20 V, VGS = 0 V - 1µAVDS = - 20 V, VGS = 0 V, TJ = 55 °C - 5On-State Drain CurrentaID(on) VDS ≤ - 5 V, VGS = - 4.5 V - 20ADrain-Source On-State ResistanceaRDS(on) VGS = - 4.5 V, ID = - 6.5 A 0.0250.032ΩVGS = - 2.5 V, ID = - 2 A 0.0400.050Forward Transconductanceagfs VDS = - 10 V, ID = - 6.5 A 18SDiode Forward VoltageaVSDIS = - 1.7 A, VGS = 0 V - 0.75- 1.2VDynamicbTotal Gate ChargeQgVDS = - 10 V, VGS = - 4.5 V, ID = - 6.5 A 1421nCGate-Source ChargeQgs 2.6Gate-Drain ChargeQgd 4.6Gate ResistanceRgf = 1 MHz8.3ΩTurn-On Delay Timetd(on) VDD = - 10 V, RL = 10 Ω ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 6 Ω3045nsRise Timetr4060Turn-Off Delay Timetd(off) 80120Fall Timetf5585Source-Drain Reverse Recovery TimetrrIF = - 1.7 A, dI/dt = 100 A/µs4080

Output Characteristics0816243240

012345VGS = 5 thru 3.5 V

VDS – Drain-to-Source Voltage (V)– Drain Current (A)ID2.5 V2 V3 V

1.5 VTransfer Characteristics0816243240

0.00.51.01.52.02.53.03.54.0TC = -55 °C125 °C25 °C

VGS – Gate-to-Source Voltage (V)– Drain Current (A)ID

http://oneic.com/Document Number: 72753S09-0704-Rev. B, 27-Apr-09www.vishay.com3Vishay SiliconixSi4963BDYTYPICAL CHARACTERISTICS 25°C unless otherwise noted

On-Resistance vs. Drain Current

Gate Charge

Source-Drain Diode Forward Voltage– On-Resistance (Ω)

RDS(on)0.000.02

0.040.060.080.10

0816243240ID – Drain Current (A)VGS = 2.5 VVGS = 4.5 V

012345

0246810121416VDS = 10 VID = 6.5 A

– Gate-to-Source Voltage (V)

Qg – Total Gate Charge (nC)VGS

0.00.30.60.91.21.54010

1VSD – Source-to-Drain Voltage (V)– Source Current (A)ISTJ = 150 °CTJ = 25 °CCapacitance

On-Resistance vs. Junction Temperature

On-Resistance vs. Gate-to-Source Voltage0400800120016002000

048121620VDS – Drain-to-Source Voltage (V)CrssCossCissC – Capacitance (pF)

0.60.81.01.21.41.6

-50-250255075100125150VGS = 4.5 VID = 6.5 A

TJ – Junction Temperature (°C)RDS(on) – On-Resistance(Normalized)

0.000.020.040.060.080.10

012345ID = 6.5 A– On-Resistance (Ω)

RDS(on)VGS – Gate-to-Source Voltage (V)ID = 2 A

http://oneic.com/www.vishay.com4Document Number: 72753S09-0704-Rev. B, 27-Apr-09Vishay SiliconixSi4963BDYTYPICAL CHARACTERISTICS 25°C unless otherwise noted

Threshold Voltage-0.2-0.10.00.10.20.30.40.5

-50-250255075100125150TJ – Temperature (°C)ID = 250 µAVariance (V)VGS(th)

Single Pulse Power

01530

510Power (W)

Time (s)25

11006001010-110-220

Safe Operating Area1001

0.11101000.0110TA = 25 °CSingle PulseP(t) = 10DC0.1IDM LimitedID(on)Limited BVDSS LimitedP(t) = 1P(t) = 0.1P(t) = 0.01P(t) = 0.001P(t) = 0.0001Limited by RDS(on)*