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安徽富信半导体科技有限公司ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.MMBTA92 SOT-23Bipolar Transistor双极型三极管▉Features特点PNP High Voltage高压▉Absolute Maximum Ratings最大额定值Characteristic特性参数Symbol符号Rat额定值Unit单位Collector-Base Voltage集电极基极电压V CBO-300V Collector-Emitter Voltage集电极发射极电压V CEO-300V Emitter-Base Voltage发射极基极电压V EBO-5V Collector Current集电极电流I C-200mA Power dissipation耗散功率P C(T a=25℃)300mW Thermal Resistance Junction-Ambient热阻RΘJA417℃/WJunction and Storage TemperatureT J,T stg-55to+150℃结温和储藏温度■Device Marking产品打标MMBTA92=2DANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.MMBTA92■ElectricalCharacteristics 电特性(T A =25℃unless otherwise noted 如无特殊说明，温度为25℃)Characteristic 特性参数Symbol 符号Min 最小值Type 典型值Max 最大值Unit 单位Collector-Base Breakdown V oltage集电极基极击穿电压(I C =-100uA ，I E =0)BV CBO -300——V Collector-Emitter Breakdown Voltage集电极发射极击穿电压(I C =-1mA ，I B =0)BV CEO -300——V Emitter-Base Breakdown V oltage发射极基极击穿电压(I E =-10uA ，I C =0)BV EBO -5——V Collector-Base Leakage Current集电极基极漏电流(V CB =-300V ，I E =0)I CBO ——-100nA Collector-Emitter Leakage Current集电极发射极漏电流(V CE =-200V ，I B =0)I CEO ——-100nA Emitter-Base Leakage Current发射极基极漏电流(V EB =-5V ，I C =0)I EBO ——-100nADC Current Gain直流电流增益(V CE =-10V ，I C =-1mA)H FE (1)60——DC Current Gain直流电流增益(V CE =-10V ，I C =-10mA)H FE (2)100—200DC Current Gain直流电流增益(V CE =-10V ，I C =-30mA)H FE (3)60——Collector-Emitter Saturation Voltage集电极发射极饱和压降(I C =-20mA ，I B =-2mA)V CE(sat)——-0.2V Base-Emitter Saturation V oltage基极发射极饱和压降(I C =-20mA ，I B =-2mA)V BE(sat)——-0.9V Transition Frequency特征频率(V CE =-20V ，I C =-10mA)f T 50——MH Z Output Capacitance输出电容(V CB =-20V ，I E =0,f=1MH Z )C ob—6—pFANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.MMBTA92■Typical Characteristic Curve典型特性曲线安徽富信半导体科技有限公司ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.MMBTA92■Dimension外形封装尺寸Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 0.900 1.1500.0350.045A10.0000.1000.0000.004A20.900 1.0500.0350.041b 0.3000.5000.0120.020c 0.0800.1500.0030.006D 2.800 3.0000.1100.118E 1.200 1.4000.0500.055E1 2.2502.5500.0890.100e 0.950TYP0.037TYPe1 1.8002.0000.0710.079L 0.550REF0.022REFL10.3000.5000.0120.020θ0o8o0o8o。
DM DM MMBTA93)=2EA93A92MMBTA92)=2DDM DM BTA92(MMBTA92)BTA93(MMBTA93)■FEATURES 特點PNP High Voltage Transistor■MAXIMUM RATINGS最大額定值Characteristic 特性參數Symbol 符號BT A92BT A93Unit 單位Collector-Emitter Voltage 集電極-射極電壓V CEO -300-200Vdc Collector-Base Voltage 集電極-極電壓V CBO -300-200Vdc Emitter-Base Voltage 發射極基極電壓V EBO -6.0-6.0Vdc Collector Current-Continuous 集極電流-連續Ic-500-500mAdc■THERMAL CHARACTERISTICS 熱特性Characteristic 特性參數Symbol 符號Max 最大值Unit 單位Total Device Dissipation 總耗散功率FR-5Board(1)T A =25℃溫度爲25℃Derate above25℃超過25℃遞減P D2251.8mW mW/℃Total Device Dissipation 總耗散功率Alumina Substrate 氧化鋁襯底,(2)T A =25℃溫度爲25℃Derate above25℃超過25℃遞減P D3002.4mW mW/℃Thermal Resistance Junction to Ambient 熱阻R ΘJA 417℃/WJunction and Storage Temperature 結溫和儲存溫度T J ,T stg150℃,-55to+150℃■DEVICEMARKING 打標DMBT (DMBT (DM DM DM DM DM DM DM DM DM DM DM DM ■ELECTRICAL CHARACTERISTICS 電特性(T A =25℃unless otherwise noted 如無特殊說明，溫度爲25℃)Characteristic 特性參數Symbol 符號Min 最小值Max 最大值Unit 單位Collector-Emitter Breakdown Voltage(3)集電極-發射極擊穿電壓(Ic=-1.0mAdc,I B =0)V (BR)CEO BT A92BT A93-300-200——VdcCollector-Base Breakdown V oltage集電極-基極擊穿電壓(Ic=-100μAdc,I E =0)V (BR)CBO BT A92BT A93-300-200—__Vdc Emitter-Base Breakdown V oltage發射極-基極擊穿電壓(I E =-10μAdc,Ic=0)V (BR)EBO -5.0—Vdc Emitter Cutoff Current 發射截止電流(V EB =-3.0Vdc,I c =0)I EBO __-100nAdcCollector Cutoff Current 集電極截止電流(V CB =-200Vdc,I E =0)(V CB =-160Vdc,I E=0)I CBO BT A92BT A93—__-250-250nAdc DC Current Gain 直流電流增益H FE—(I c =-1.0mAdc,V CE =-10.0Vdc)25—(I c =-10mAdc,V CE =-10.0Vdc)40300(I c =-30mAdc,V CE =-10.0Vdc)BT A92BT A932525—__Collector-Emitter Saturation Voltage 集電極-發射極飽和壓降(I c =-20mAdc,I B =-2.0mAdc)V CE(sat)BT A92BT A93——-0.5-0.5VdcBase-Emitter Saturation V oltage 基極-發射極飽和壓降(I c =-20mAdc,I B =-2.0mAdc)V BE(sat)—-0.9VdcCurrent-Gain-Bandwidth Product 電流增益-帶寬乘積(I c =-10mAdc,V CE =-20Vdc,f=100MHz)f T 50__MHz Collector-Base Capacitance 輸出電容(V CB =-20.0Vdc,I E =0,f=1.0MHz)C cbBT A92BT A93—__6.08.0pF１．FR-5=1.0×0.75×0.062in.２．Alumina=0.4×0.3×0.024in.99.5%alumina.３．Pulse Width<300us;Duty Cycle<2.0%.DM DM BTA92(MMBTA92)BTA93(MMBTA93)■DIMENSION 外形封裝尺寸單位(UNIT)：mmDM DM BTA92(MMBTA92)BTA93(MMBTA93)。
常⽤贴⽚三极管参数及丝印现在贴⽚三极管⼴泛⽤于各种电⼦产品中，但像SOT23封装的贴⽚三极管，因其体积较⼩，管壳上⼀般打印不下完整型号，通常都是采⽤⼀些代码来表⽰其型号，这给使⽤与维修带来了⼀些⿇烦。
本⽂介绍⼀些⽬前最常⽤的贴⽚三极管的丝印及其主要参数，供电⼦爱好者参考。
1、S9012，PNP型三极管，Pcm＝300mW，Icm＝500mA，BVceo＝25V。
2、S9013，NPN型三极管，Pcm＝300mW，Icm＝500mA，BVceo＝25V。
9012和9013经常作为互补管使⽤。
3、S9014，NPN型三极管，Pcm＝200mW，Icm＝100mA，BVceo＝45v。
4、S9015，PNP型三极管，Pcm＝200mW，Icm＝100mA，BVceo＝45V。
S9014和S9015为互补管。
5、S9018，NPN型⾼频三极管，Pcm＝200mW，Icm＝50mA，BVceo＝18V。
6、S8050，NPN型三极管，Pcm＝300mW，Icm＝500mA，BVceo＝25V。
7、S8550，PNP型三极管，Pcm＝300mW，Icm＝500mA，BVceo＝25V。
S8050和S8550为互补管。
8、A1015完整型号为2SA1015，PNP型三极管，Pcm＝200mW，Icm＝150mA，BVceo＝50V。
9、C1815，完整型号为2SC1815，NPN型三极管，Pcm＝200mW，Icm＝150mA，BVceo＝50V。
该管与A1015为互补管。
10、MMBT5551，NPN型三极管，Pcm＝300mW，Icm＝600mA ，BVceo＝150V。
5551为互补管。
12、2SA733，PNP型三极管，Pcm＝200mW，Icm＝150mA，BVceo＝50V。
为互补管。
14、M MBTA42，NPN型⾼反压三极管，Pcm＝300mW，Icm＝300mA，BVceo＝300V。
与MMBTA42为互补管。
MMBTA92300V PNP SMALL SIGNAL TRANSISTOR IN SOT23Features∙ BV CEO > 300V∙ Ideal for Medium Power Amplification and Switching ∙ Complementary NPN Type: MMBTA42∙ Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) ∙ Halogen and Antimony Free. “Green” Device (Note 3) ∙ Qualified to AEC-Q101 Standards for High Reliability ∙ PPAP Capable (Note 4)Mechanical Data∙ Case: SOT-23∙ Case Mate rial: Molded Plastic, “Green” Molding C ompound; UL Flammability Classification Rating 94V-0 ∙ Moisture Sensitivity: Level 1 per J-STD-020∙ Terminals: Finish-Matte Tin Plated Leads; Solderable per MIL-STD-202, Method 208 ∙Weight: 0.008 grams (Approximate)Ordering Information (Notes 4 & 5)Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.2. See /quality/lead_free.html for more information about Diodes Incorporated’s definitions of Hal ogen- and Antimony-free, "Green" and Lead-free.3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and<1000ppm antimony compounds.4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified.5. For packaging details, go to our website at /products/packages.html.Marking InformationTop ViewDevice SymbolSOT23Top View Pin-Out SymbolhematicK3R = Product Type Marking Code YM = Date Code Marking Y = Year (ex: C = 2015)M = Month (ex: 9 = September)CEBY MK3RSOT23Absolute Maximum Ratings(@T A = +25°C, unless otherwise specified.)Thermal Characteristics(@T A = +25°C, unless otherwise specified.)ESD Ratings (Note 6)Notes: 5. For a device mounted on minimum recommended pad layout 1oz copper that is on a single-sided FR4 PCB; device is measured under still air conditions whilst operating in a steady-state.6. Refer to JEDEC specification JESD22-A114 and JESD22-A115.Electrical Characteristics(@T A = +25°C, unless otherwise specified.)Note: 7. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.050100255075100125150175200P , P O W E R D I S S I P A T I O N (m W )D T , AMBIENT TEMPERATURE (°C)A Fig. 1Power Dissipation vs. Ambient Temperature15020025030035001101001000V , C O L L E C T O R T O E M I T T E R S A T U R A T I O N V O L T A G E (V )I , COLLECTOR CURRENT (mA)Fig. 2, Collector Emitter Saturation VoltageC 0.100.20.30.40.50.60.70.81.00.91101,00010,0001001101000100h , D C C U R R E N T G A I NF E I , COLLECTOR CURRENT (mA)Fig. 3, DC Current Gain vsCollector CurrentC 0.10.20.1110100V , B A S E E M I T T E R V O L T A G E (V )B E (O N )0.30.40.50.60.70.80.91.0I , COLLECTOR CURRENT (mA)Fig. 4, Base Emitter Voltage vs Collector CurrentC 110100110f , G A I N B A N D W I D T H P R O D U C T (M H z )T I , COLLECTOR CURRENT (mA)Fig. 5, Gain Bandwidth Product vsCollector CurrentCPackage Outline DimensionsPlease see AP02002 at /datasheets/ap02002.pdf for the latest versionSuggested Pad LayoutPlease see AP02001 at /datasheets/ap02001.pdf for the latest version.Note:For high voltage applications, the appropriate industry sector guidelines should be considered with regards to creepage and clearance distances between device terminals and PCB tracking.All 7°X E YCZ。
