BUZ72L中文资料
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Semiconductor Group107/96BUZ 72 LSIPMOS ® Power Transistor• N channel• Enhancement mode• Avalanche-rated• Logic Level
Pin 1Pin 2Pin 3GDS
TypeVDSIDRDS(on)PackageOrdering CodeBUZ 72 L100 V10 A0.2 ΩTO-220 ABC67078-S1327-A2
Maximum RatingsParameterSymbolValuesUnitContinuous drain current TC = 25 °CID 10A
Pulsed drain currentTC = 25 °CIDpuls 40
Avalanche current,limited by TjmaxIAR 10Avalanche energy,periodic limited by TjmaxEAR 7.9mJAvalanche energy, single pulseID = 10 A, VDD = 25 V, RGS = 25 Ω
L = 885 µH, Tj = 25 °CEAS 59
Gate source voltageVGS± 14VGate-source peak voltage,aperiodicVgs± 20Power dissipationTC = 25 °CPtot 40W
Operating temperatureTj -55 ... + 150°CStorage temperatureTstg -55 ... + 150Thermal resistance, chip case RthJC ≤ 3.1K/WThermal resistance, chip to ambient RthJA 75DIN humidity category, DIN 40 040E IEC climatic category, DIN IEC 68-1 55 / 150 / 56
元器件交易网www.cecb2b.comSemiconductor Group207/96
BUZ 72 LElectrical Characteristics, at Tj = 25°C, unless otherwise specifiedParameterSymbolValuesUnit
min.typ.max.
Static CharacteristicsDrain- source breakdown voltageVGS = 0 V, ID = 0.25 mA, Tj = 25 °CV(BR)DSS 100--V
Gate threshold voltageVGS=VDS, ID = 1 mAVGS(th) 1.2 1.6 2
Zero gate voltage drain currentVDS = 100 V, VGS = 0 V, Tj = 25 °CVDS = 100 V, VGS = 0 V, Tj = 125 °CIDSS-- 10 0.1 100 1µA
Gate-source leakage currentVGS = 20 V, VDS = 0 VIGSS- 10 100nADrain-Source on-resistanceVGS = 5 V, ID = 5 ARDS(on)- 0.12 0.2
Ω
元器件交易网www.cecb2b.comSemiconductor Group307/96
BUZ 72 LElectrical Characteristics, at Tj = 25°C, unless otherwise specifiedParameterSymbolValuesUnit
min.typ.max.
Dynamic CharacteristicsTransconductanceVDS≥ 2 * ID * RDS(on)max, ID = 5 Agfs 5 7.5-S
Input capacitanceVGS = 0 V, VDS = 25 V, f = 1 MHzCiss- 680 900pFOutput capacitanceVGS = 0 V, VDS = 25 V, f = 1 MHzCoss- 180 250
Reverse transfer capacitanceVGS = 0 V, VDS = 25 V, f = 1 MHzCrss- 90 150
Turn-on delay timeVDD = 30 V, VGS = 5 V, ID = 3 ARGS = 50 Ωtd(on)- 20 30ns
Rise timeVDD = 30 V, VGS = 5 V, ID = 3 A
RGS = 50 Ωtr- 85 130
Turn-off delay timeVDD = 30 V, VGS = 5 V, ID = 3 A
RGS = 50 Ωtd(off)- 100 130
Fall timeVDD = 30 V, VGS = 5 V, ID = 3 A
RGS = 50 Ωtf- 55 70
元器件交易网www.cecb2b.comSemiconductor Group407/96
BUZ 72 LElectrical Characteristics, at Tj = 25°C, unless otherwise specifiedParameterSymbolValuesUnit
min.typ.max.
Reverse DiodeInverse diode continuous forward currentTC = 25 °CIS-- 10A
Inverse diode direct current,pulsedTC = 25 °CISM-- 40
Inverse diode forward voltageVGS = 0 V, IF = 20 AVSD- 1.2 1.5V
Reverse recovery timeVR = 30 V, IF=lS, diF/dt = 100 A/µstrr- 180-nsReverse recovery chargeVR = 30 V, IF=lS, diF/dt = 100 A/µsQrr- 460-nC
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BUZ 72 LPower dissipation Ptot = ƒ(TC)020406080100120°C160TC0 5 10 15 20 25 30 35 W 45 PtotDrain current ID = ƒ(TC)
parameter: VGS ≥
5 V
020406080100120°C160TC
0 1 2 3 4 5 6 7 8 9 A 11 ID
Safe operating area ID = ƒ(VDS)parameter: D = 0.01, TC = 25°C-1 10 0 10 1 10 2 10 A ID10 0 10 1 10 2 V VDS R DS(on) = V DS / I DDC 10 ms 1 ms 100 µs tp = 30.0µsTransient thermal impedance Zth JC = ƒ(tp)
parameter: D = tp / T
-3 10
-2 10
-1 10
0 10 1 10 K/W ZthJC
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 s tp
single pulse0.010.020.050.100.20D = 0.50
元器件交易网www.cecb2b.comSemiconductor Group607/96
BUZ 72 LTyp. output characteristics ID = ƒ(VDS)parameter: tp = 80 µs0.01.02.03.04.05.0V6.5VDS0 2 4 6 8 10 12 14 16 18 20 A 24 IDVGS [V] aa2.0bb2.5cc3.0dd3.5ee4.0ff4.5gg5.0hh5.5ii6.0jj7.0kk8.0lPtot = 40Wl10.0Typ. drain-source on-resistance RDS (on) = ƒ(ID)
parameter: VGS
02468101214A17ID
0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.55 Ω 0.65 RDS (on)
2.02.5VGS [V] =
aa3.0bb3.5cc4.0dd4.5ee5.0ff5.5gg6.0hh7.0ii8.0jj10.0
Typ. transfer characteristics ID = f (VGS)parameter: tp = 80 µsVDS≥2 x ID x RDS(on)max012345678V10VGS0 2 4 6 8 10 12 14 16 18 20 22 24 26 A 30 IDTyp. forward transconductance gfs = f (ID)parameter: tp = 80 µs,VDS≥2 x ID x RDS(on)max
048121620A28ID
0 1 2 3 4 5 6 7 8 9 10 S 12 gfs
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