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BUK7107-55AIE中文资料

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1.2 Features
s Integrated current sensor s ESD protection s Q101 compliant s Standard level compatible.
1.3 Applications
s Variable Valve Timing for engines s Electrical Power Assisted Steering.
VGS ≥ 10 V
Fig 1. Normalized total power dissipation as a function of mounting base temperature.
Fig 2. Continuous drain current as a function of mounting base temperature.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 09877
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
1.4 Quick reference data
s VDS ≤ 55 V s ID ≤ 140 A s RDSon = 5.8 mΩ (typ) s ID/Isense = 500 (typ).
2. Pinning information
Table 1: Pin 1 2 3 4 5 mb Pinning - SOT426 and SOT263B, simplified outline and symbol Simplified outline
80
40 40
Capped at 75A due to package
0 0 50 100 150 200 Tmb (° C)
0 0 50 100 150 200 Tmb (°C)
P tot P der = ---------------------- × 100 % P °
tot ( 25 C )
BUK71/7907-55AIE
TrenchPLUS standard level FET
Rev. 01 — 12 August 2002 Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance, TrenchPLUS current sensing and diodes for ESD protection. Product availability: BUK7107-55AIE in SOT426 (D2-PAK) BUK7907-55AIE in SOT263B (TO-220AB).
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
9397 750 09877
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 01 — 12 August 2002
4 of 15
Philips Semiconductors
BUK71/7907-55AIE
TrenchPLUS standard level FET
5. Characteristics
Table 4: Characteristics Tj = 25 °C unless otherwise specified. Symbol V(BR)DSS Parameter drain-source breakdown voltage Conditions ID = 0.25 mA; VGS = 0 V Tj = 25°C Tj = −55 °C VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; Figure 9 Tj = 25°C Tj = 175 °C Tj = −55 °C IDSS drain-source leakage current VDS = 55 V; VGS = 0 V Tj = 25°C Tj = 175 °C V(BR)GSS IGSS gate-source breakdown voltage gate-source leakage current IG = ±1 mA; −55°C < Tj <175 °C VGS = ±10 V; VDS = 0 V Tj = 25 °C Tj = 175 °C RDSon drain-source on-state resistance VGS = 10 V; ID = 50 A; Figure 7 and 8 Tj = 25°C Tj = 175 °C ID/Isense ratio of drain current to sense VGS > 10 V; current −55°C < Tj <175 °C total gate charge gate-source charge gate-to-drain (Miller) charge input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time internal drain inductance from upper edge of drain mounting base to center of die from source lead to source bond pad VDS = 30 V; RL = 1.2 Ω; VGS = 10 V; RG = 10 Ω VGS = 0 V; VDS = 25 V; f = 1 MHz; Figure 12 VGS = 10 V; VDS = 44 V; ID = 25 A; Figure 14 450 5.8 500 7 14 550 mΩ mΩ 22 1000 10 nA µA 20 0.1 22 10 250 µA µA V 2 1 3 4 4.4 V V V 55 50 V V Min Typ Max Unit Static characteristics
s Kelvin source
1
5
MBL263
SOT426 (D2-PAK)
SOT263B (TO-220AB)
Philips Semiconductors
BUK71/7907-55AIE
TrenchPLUS standard level FET
3. Limiting values
Table 2: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VDGS VGS ID Parameter drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) Tmb = 25 °C; VGS = 10 V; Figure 2 and 3 Tmb = 100 °C; VGS = 10 V; Figure 2 IDM Ptot IGS(CL) Tstg Tj IDR IDRM EDS(AL)S peak drain current total power dissipation gate-source clamping current storage temperature junction temperature reverse drain current peak reverse drain current non-repetitive drain-source avalanche energy Tmb = 25 °C Tmb = 25 °C; pulsed; tp ≤ 10 µs unclamped inductive load; ID = 68 A; VDS ≤ 55 V; VGS = 10 V; RGS = 50 Ω; starting Tj = 25 °C
103 ID (A)
03nf55
Limit RDSon = VDS/ID
tp = 10 µs
102
100 µs Capped at 75 A due to package 1 ms DC
10
10 ms 100 ms
1 1 10 VDS (V) 102
Tmb = 25 °C; IDM single pulse.
[1] [2] [1] [2] [2]
Conditions IDG = 250 µA
Min −55 −55 -
Max 55 55 ±20 140 75 75 560 272 10 50 +175 +175 140 75 560 460
Unit V V V A A A A W mA mA °C °C A A A mJ
Product data
Rev. 01 — 12 August 2002
3 of 15
Philips Semiconductors

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AS1117-BQFT;中文规格书,Datasheet资料

AS1117-BQFT;中文规格书,Datasheet资料

3 Applications
The AS1117 is ideal for seven-segment or dot matrix user interface displays of mobile applications, set-top boxes, VCRs, DVD-players, washing machines, micro wave ovens, refrigerators and other white good or personal electronic applications.
Keyscan Input. Keyscan lines for key readback. Can be used for self-adressing. Reset Input. Pull this pin to low to resest all registers (set to default values) and to put the device into shutdown. Connect this pin via a pull-up resistor to VDD for normal operation. Set Segment Current. Connect to VDD or a reference voltage through RSET to set the peak segment current (see Selecting RSET Resistor Value and Using External Drivers on page 19). Serial-Clock Input. 3.4MHz maximum rate.
Stresses beyond those listed in Table 3 may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in Section 6 Electrical Characteristics on page 4 is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
KN-710用户手册

KN-710用户手册

KN-710业余短波单边带收发信机用户手册2004 © BA6BF版权所有版本VER 1.0KN-710 用户手册 本手册对应 BA6BF 设计的 KN-710 型业余短波单边带收 发信机（以下简称“本机”。

请用户仔细阅读本手册，以便 ） 详细了解本机的安装及调试等方法，避免出现不必要的问 题。

1KN-710 用户手册目录一． 二． 三． 四． 五． 六． 七． 八． 九． 十．KN-710 简介 清点元件 认识元件 组装之前的准备工作 焊接技巧 通电之前的准备工作 天线的架设 调试技巧 故障与解决 浅谈单边带通信原理十一．维修与服务1KN-710 用户手册一．KN-710 简介 KN-710 为 BA6BF 设计的业余短波单边带收发信机套件， 它主要工作在 40 公尺业余波段，其具有最大 50 瓦特的额定 输出功率。

而且由于其电路均基于准确的计算和反复的试 验，装调良好的整机具有很高的性能指标和实用性，可以很 好的运用于三级操作证书所规定的 40 公尺业余波段。

基于对单边带通信机以及对业余无线电通信的深刻理 解，KN-710 的电路设计简洁明了。

摈弃了很多华而不实的功 能，而注重在实用性方面取得突破。

针对多数爱好者不具备 专业的测试仪器，设计者在电路安排及细节考虑上均尽了最 大的努力使得套件的手工调整的部分减少到了极限，从而为 提高套件的成功率做出了重要的贡献。

KN-710 技术参数 接收单元： 灵敏度：不劣于 12dB/1uV 选择性：2.7KHz/6dB;3.8KHz/60dB 音频输出功率：300mW/8 欧姆 发射单元： 输出功率：25 瓦特/50 瓦特 杂散抑制：大于 45dB 1KN-710 用户手册 谐波抑制：大于 50dB 一般规格： 供电电压：13.8V/24V 整机电流：接收：60mA 发射：4.5A 频率范围：7.050~7.070MHz1KN-710 用户手册二．清点元件 当用户拿到套件包后，请立即清点元件袋中的零件。

MB90F546GSPF中文资料

MB90F546GSPF中文资料


2
MB90540/540G/545/545G Series
(Continued) • UART 1 With full-duplex double buffer (8-bit length) Clock asynchronized or clock synchronized serial (extended I/O serial) can be used. • External interrupt circuit (8 channels) A module for starting an extended intelligent I/O service (EI2OS) and generating an external interrupt which is triggered by an external input. • Delayed interrupt generation module Generates an interrupt request for switching tasks. • 8/10-bit A/D converter (8 channels) 8/10-bit resolution can be selectively used. Starting by an external trigger input. Conversion time : 26.3 µs • FULL-CAN interfaces MB90540 series : 2 channel MB90545 series : 1 channel Conforming to Version 2.0 Part A and Part B Flexible message buffering (mailbox and FIFO buffering can be mixed) • External bus interface : Maximum address space 16 Mbytes • Package: QFP-100, LQFP-100
L4977A资料

L4977A资料

BLOCK DIAGRAM
The block diagram shows the DMOS power transistor and the PWM control loop. Integrated functions include a reference voltage trimmed to 5.1V ± 2%, soft start, undervoltage lockout, oscillator with feedforward control, pulse by pulse current limit, thermal shutdown and finally the reset and power fail circuit. The reset and power fail circuit provides an output signal for a microprocessor indicating the status of the system.
The device can deliver 7A at an output voltage adjustable from 5.1V to 40V, and contains diagnostic and control functions that make it particularly suitable for microprocessor based systems.
Multiwatt15V ORDERING NUMBER: L4977A
Realized with BCD mixed technology, the device uses a DMOS output transistor to obtain very high efficiency and very fast switching times. Features of the L4977A include reset and power fail for microprocessors, feed forward line regulation, soft start, limiting current and thermal protection. The device is mounted in a 15-lead multiwatt plastic power package and requires few external components. Efficient operation at switching frequencies up to 500KHz allows reduction in the size and cost of external filter components.