BUZ307中文资料
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SIPMOS ®Power Transistor• N channel• Enhancement mode • Avalanche-ratedPin 1Pin 2Pin 3G D STypeV DS I D R DS(on )Package Ordering CodeBUZ 307800 V 3 A3 ΩTO-218 AA C67078-S3100-A2Maximum Ratings ParameterSymbolValuesUnitContinuous drain current T C = 35 °CI D3APulsed drain current T C = 25 °CI Dpuls12Avalanche current,limited by T jmaxI AR 3Avalanche energy,periodic limited by T jmax E AR 8mJAvalanche energy, single pulse I D = 3 A, V DD = 50 V, R GS = 25 ΩL = 66.6 mH, T j = 25 °C E AS320Gate source voltage V GS ± 20V Power dissipation T C = 25 °CP tot75WOperating temperature T j -55 ... + 150°CStorage temperatureT stg -55 ... + 150Thermal resistance, chip case R thJC ≤ 1.67K/WThermal resistance, chip to ambient R thJA75DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-155 / 150 / 56Electrical Characteristics, at T j = 25°C, unless otherwise specifiedParameter Symbol Values Unitmin.typ.max.Static CharacteristicsDrain- source breakdown voltageV GS = 0 V, I D = 0.25 mA, T j = 25 °C V(BR)DSS800--VGate threshold voltage V GS=V DS, I D = 1 mA V GS(th)2.1 3 4Zero gate voltage drain currentV DS = 800 V, V GS = 0 V, T j = 25 °C V DS = 800 V, V GS = 0 V, T j = 125 °C I DSS--100.11001µAGate-source leakage current V GS = 20 V, V DS = 0 V I GSS- 10 100nADrain-Source on-resistance V GS = 10 V, I D = 1.5 A R DS(on)- 2.7 3ΩElectrical Characteristics, at T j = 25°C, unless otherwise specifiedParameter Symbol Values Unitmin.typ.max.Dynamic CharacteristicsTransconductanceV DS≥ 2 *I D * R DS(on)max, I D = 1.5 A g fs1 1.8-SInput capacitanceV GS = 0 V, V DS = 25 V, f = 1 MHz C iss- 1400 1860pFOutput capacitanceV GS = 0 V, V DS = 25 V, f = 1 MHz C oss- 85 130Reverse transfer capacitanceV GS = 0 V, V DS = 25 V, f = 1 MHz C rss- 30 45Turn-on delay timeV DD = 30 V, V GS = 10 V, I D = 3 A R GS = 50 Ωt d(on)- 20 30nsRise timeV DD = 30 V, V GS = 10 V, I D = 3 A R GS = 50 Ωt r- 60 90Turn-off delay timeV DD = 30 V, V GS = 10 V, I D = 3 A R GS = 50 Ωt d(off)- 80 110Fall timeV DD = 30 V, V GS = 10 V, I D = 3 A R GS = 50 Ωt f- 50 65Electrical Characteristics, at T j = 25°C, unless otherwise specifiedParameter Symbol Values Unitmin.typ.max.Reverse DiodeInverse diode continuous forward current T C = 25 °C I S-- 3AInverse diode direct current,pulsed T C = 25 °C I SM-- 12Inverse diode forward voltage V GS = 0 V, I F = 6 A V SD- 1 1.3VReverse recovery timeV R = 100 V, I F=l S, d i F/d t = 100 A/µs t rr- 500-nsReverse recovery chargeV R = 100 V, I F=l S, d i F/d t = 100 A/µs Q rr- 6-µCDrain current I D = ƒ(T C )parameter: V GS ≥ 10 V20406080100120°C 160T C0.0 0.4 0.81.21.62.02.4A3.2I DPower dissipation P tot = ƒ(T C )20406080100120°C 160TC0 10 2030405060W80P totSafe operating area I D = ƒ(V DS )parameter: D = 0.01, T C = 25°C-2 10 -110 010 110 2 10 AI D10101102103V V DSR D S(on )= VD S/ I DDC10 ms1 ms100 µs10 µs1 µs t p = 670.0nsTransient thermal impedanceZ th JC = ƒ(t p )parameter: D = t p / T10 10 10 10 10 Z thJC10101010101010 10s t pTyp. output characteristics I D = ƒ(V DS )parameter: t p = 80 µs5101520253035V 45V DSI DTyp. drain-source on-resistance R DS (on) = ƒ(I D )parameter: t p = 80 µs, T j = 25 °C0.01.02.03.04.05.0A6.5I DR DS (on)Typ. transfer characteristics I D = f (V GS )parameter: t p = 80 µs V DS ≥2 x I D x R DS(on)max12345678V10V GS0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.54.0 A5.0 I DTyp. forward transconductance g fs = f (I D )parameter: t p = 80 µs,V DS ≥2 x I D x R DS(on)max0.00.5 1.0 1.5 2.0 2.5 3.0A4.0I D0.0 0.51.0 1.52.0S3.0g fsGate threshold voltage V GS (th) = ƒ(T j )parameter: V GS = V DS , I D = 1 mA0.0 0.4 0.8 1.2 1.6 2.02.4 2.83.2 3.64.0V 4.6 V GS(th)-60-202060100°C160Tj2% typ 98%Drain-source on-resistance R DS (on) = ƒ(T j )parameter: I D = 1.5 A, V GS = 10 V-60-202060100°C 160T j0 1 2 3 4 5 6 7 8 9 10 1112Ω14R DS (on)typ98%Typ. capacitancesC = f (V DS )parameter:V GS = 0V, f = 1MHz51015202530V40V DS-210 -110 010 110 nFCC rssC ossC issForward characteristics of reverse diode I F = ƒ(V SD)parameter: T j , t p = 80 µs10 10 10 10 I F0.00.40.81.21.62.02.4V3.0V SDAvalanche energy E AS = ƒ(T j )parameter: I D = 3 A, V DD = 50 V R GS = 25 Ω, L = 66.6 mH20406080100120°C 160T j0 40 80 120 160 200 240280 mJ340 E ASTyp. gate charge V GS = ƒ(Q Gate )parameter: I D puls = 5 A1020304050nC 70Q Gate0 2 4681012V16V GSDS maxV 0,8 DS maxV 0,2 Drain-source breakdown voltage V (BR)DSS = ƒ(T j )-60-202060100°C160T j720 740 760 780 800 820 840 860 880 900920V960 V (BR)DSS。