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BUZ11AL中文资料

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SIPMOS®Power Transistor• N channel• Enhancement mode• Avalanche-rated• Logic LevelPin 1Pin 2Pin 3G D SType V DS I D R DS(on)Package Ordering Code BUZ 11 AL50 V26 A0.055 ΩTO-220 AB C67078-S1330-A3 Maximum RatingsParameter Symbol Values UnitContinuous drain current T C = 25 °C I D26APulsed drain current T C = 25 °C I Dpuls104Avalanche current,limited by T jmax I AR 30Avalanche energy,periodic limited by T jmax E AR 1.9mJAvalanche energy, single pulseI D = 30 A, V DD = 25 V, R GS = 25 ΩL = 15.6 µH, T j = 25 °C E AS14Gate source voltage V GS± 14V Gate-source peak voltage,aperiodic V gs± 20Power dissipation T C = 25 °C P tot75WOperating temperature T j -55 ... + 150°C Storage temperature T stg -55 ... + 150 Thermal resistance, chip case R thJC ≤ 1.67K/W Thermal resistance, chip to ambient R thJA≤ 75DIN humidity category, DIN 40 040 EIEC climatic category, DIN IEC 68-1 55 / 150 / 56Electrical Characteristics, at T j = 25°C, unless otherwise specifiedParameter Symbol Values Unitmin.typ.max.Static CharacteristicsDrain- source breakdown voltage V GS = 0 V, I D = 0.25 mA, T j = 25 °C V(BR)DSS50--VGate threshold voltage V GS=V DS, I D = 1 mA V GS(th)1.2 1.6 2Zero gate voltage drain currentV DS = 50 V, V GS = 0 V, T j = 25 °C V DS = 50 V, V GS = 0 V, T j = 125 °C I DSS--100.11001µAGate-source leakage current V GS = 20 V, V DS = 0 V I GSS- 10 100nADrain-Source on-resistance V GS = 5 V, I D = 13 A R DS(on)- 0.04 0.055ΩBUZ 11 ALNot for new designElectrical Characteristics, at T j = 25°C, unless otherwise specifiedParameter Symbol Values Unitmin.typ.max.Dynamic CharacteristicsTransconductanceV DS≥ 2 *I D * R DS(on)max, I D = 13 A g fs10 22-SInput capacitanceV GS = 0 V, V DS = 25 V, f = 1 MHz C iss- 1500 2000pFOutput capacitanceV GS = 0 V, V DS = 25 V, f = 1 MHz C oss- 580 840Reverse transfer capacitanceV GS = 0 V, V DS = 25 V, f = 1 MHz C rss- 190 300Turn-on delay timeV DD = 30 V, V GS = 5 V, I D = 3 A R GS = 50 Ωt d(on)- 25 40nsRise timeV DD = 30 V, V GS = 5 V, I D = 3 A R GS = 50 Ωt r- 80 120Turn-off delay timeV DD = 30 V, V GS = 5 V, I D = 3 A R GS = 50 Ωt d(off)- 110 160Fall timeV DD = 30 V, V GS = 5 V, I D = 3 A R GS = 50 Ωt f- 80 110Electrical Characteristics, at T j = 25°C, unless otherwise specifiedParameter Symbol Values Unitmin.typ.max. Reverse DiodeInverse diode continuous forward current T C = 25 °C I S-- 26AInverse diode direct current,pulsed T C = 25 °C I SM-- 104Inverse diode forward voltage V GS = 0 V, I F = 60 A V SD- 1.6 1.8VReverse recovery timeV R = 30 V, I F=l S, d i F/d t = 100 A/µs t rr- 100-nsReverse recovery chargeV R = 30 V, I F=l S, d i F/d t = 100 A/µs Q rr- 0.2-µCPower dissipation P tot = ƒ(T C )20406080100120°C160T C0 10 203040 5060W80P totDrain current I D = ƒ(T C )parameter: V GS ≥ 5 V20406080100120°C160T C0 2 4 68 10 1214 1618 2022 24A28 IDSafe operating area I D = ƒ(V DS )parameter: D = 0, T C = 25°C10 10 10 10 I D101010V V DS Transient thermal impedance Z th JC = ƒ(t p )parameter: D = t p / T10 10 10 10 10 Z thJC10101010101010 10s t pTyp. output characteristics I D = ƒ(V DS )parameter: t p = 80 µsV DS I DTyp. drain-source on-resistance R DS (on) = ƒ(I D )parameter: V GS510152025303540A 50I DR DS (on)Typ. transfer characteristics I D = f (V GS )parameter: t p = 80 µsV DS ≥2 x I D x R DS(on)max12345678V100 5 10 15 20 25 30 3540 45 50 55A 65 I DTyp. forward transconductance g fs = f (I D )parameter: t p = 80 µs,V DS ≥2 x I D x R DS(on)max10203040A 600 48 12162024S32g fsDrain-source on-resistance R DS (on) = ƒ(T j )parameter: I D = 13 A, V GS = 5 V-60-202060100°C160T jRDS (on)Gate threshold voltage V GS (th) = ƒ(T j )parameter: VGS = V DS , I D = 1 mAV GS(th)-60-202060100°C160T jTyp. capacitancesC = f (V DS )parameter:V GS = 0V, f = 1MHz51015202530V 4010 10 10 10CForward characteristics of reverse diode I F = ƒ(V SD )parameter: T j , t p = 80 µs10 10 10 10 I F0.00.40.8 1.2 1.6 2.0 2.4V 3.0Avalanche energy E AS = ƒ(T j )parameter: I D = 30 A, V DD = 25 V R GS = 25 Ω, L = 15.6 µH20406080100120°C160T j0 1 2 3 4 5 6 7 8 9 10 11 12 mJ15 EASTyp. gate charge V GS = ƒ(Q Gate )parameter: I D puls = 39 A10203040506070nC90Q GateV GSDrain-source breakdown voltage V (BR)DSS = ƒ(T j )-60-202060100°C 160T j45 46 47 48 49 50 51 52 53 54 55 56 57V60 V (BR)DSS。

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BUZ11A中文资料

BUZ11A中文资料

BUZ11AN -CHANNEL 50V -0.045Ω-26A TO-220STripFET ™MOSFETs TYPICAL R DS(on)=0.045Ωs AVALANCHE RUGGED TECHNOLOGY s 100%AVALANCHE TESTED s HIGH CURRENT CAPABILITYs175o C OPERATING TEMPERATUREAPPLICATIONSs HIGH CURRENT,HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s REGULATORSs DC-DC &DC-AC CONVERTERSs MOTOR CONTROL,AUDIO AMPLIFIERS s AUTOMOTIVE ENVIRONMENT (INJECTION,ABS,AIR-BAG,LAMPDRIVERS,Etc.)®INTERNAL SCHEMATIC DIAGRAMJuly 1999123TO-220ABSOLUTE MAXIMUM RATINGSSymbol ParameterValue Unit V DS Drain-source Voltage (V GS =0)50V V DGR Drain-gate Voltage (R GS =20k Ω)50V V GS Gate-source Voltage±20V I D Drain Current (continuous)at T c =25o C 26A I DM Drain Current (pulsed)104A P tot Total Dissipation at T c =25o C 75WT s tg Storage Temperature-65to 175o C T jMax.Operating Junction Temperature 175oCDIN HUMIDITY CATEGORY (DIN 40040)E IEC CLIMATIC CATEGORY (DIN IEC 68-1)55/150/56First digit of the datecode being Z or K identifies silicon characterized in this datasheet.TYPE V DSS R DS(on)I D BUZ11A50V<0.055Ω26A1/8THERMAL DATAR thj-case R thj-amb Thermal Resistance Junction-case MaxThermal Resistance Junction-ambient Max1.6762.5o C/Wo C/WAVALANCHE CHARACTERISTICSSymbol Parameter Value UnitI AR Avalanche Current,Repetitive or Not-Repetitive(pulse width limited by T j max,δ <1%)30AE AS Single Pulse Avalanche Energy(starting T j=25o C,I D=I AR,V DD=30V)120mJELECTRICAL CHARACTERISTICS(T case=25o C unless otherwise specified)OFFSymbol Parameter Test Conditions Min.Typ.Max.Unit V(BR)DSS Drain-sourceBreakdown VoltageI D=250µA V GS=050VI DSS Zero Gate VoltageDrain Current(V GS=0)V DS=Max RatingV DS=Max Rating T j=125o C110µAµAI GSS Gate-body LeakageCurrent(V DS=0)V GS=±20V±100nA ON(∗)Symbol Parameter Test Conditions Min.Typ.Max.Unit V GS(th)Gate Threshold Voltage V DS=V GS I D=1mA 2.134V R DS(on)Static Drain-source OnResistanceV GS=10V I D=19A0.0450.055ΩDYNAMICSymbol Parameter Test Conditions Min.Typ.Max.Unitg f s(∗)ForwardTransconductanceV DS=25V I D=19A1017SC iss C os s C rss Input CapacitanceOutput CapacitanceReverse TransferCapacitanceV DS=25V f=1MHz V GS=0140020050pFpFpFSWITCHINGSymbol Parameter Test Conditions Min.Typ.Max.Unitt d(on) t r t d(of f) t f Turn-on TimeRise TimeTurn-off Delay TimeFall TimeV DD=30V I D=15AR GS=4.7 ΩV GS=10V18955020nsnsnsnsBUZ11A 2/8ELECTRICAL CHARACTERISTICS(continued)SOURCE DRAIN DIODESymbol Parameter Test Conditions Min.Typ.Max.UnitI SD I SDM Source-drain CurrentSource-drain Current(pulsed)26104AAV SD(∗)Forward On Voltage I SD=60A V GS=0 1.8Vt rr Q rr Reverse RecoveryTimeReverse RecoveryChargeI SD=26A di/dt=100A/µsV DD=30V T j=150o C850.19nsµC(∗)Pulsed:Pulse duration=300µs,duty cycle1.5%Safe Operating Area Thermal ImpedanceBUZ11A3/8Output Characteristics TransconductanceGate Charge vs Gate-source Voltage Transfer CharacteristicsStatic Drain-source On Resistance Capacitance VariationsBUZ11A 4/8Normalized Gate Threshold Voltage vs TemperatureSource-drain Diode Forward Characteristics Normalized On Resistance vs TemperatureBUZ11A5/8Fig.1:Unclamped Inductive Load Test Circuit Fig.3:Switching Times Test Circuits For Resistive Load Fig.2:Unclamped Inductive Waveform Fig.4:Gate Charge test CircuitFig.5:Test Circuit For Inductive Load Switching And Diode Recovery TimesBUZ11A6/8DIM.mminch MIN.TYP.MAX.MIN.TYP.MAX.A 4.40 4.600.1730.181C 1.23 1.320.0480.051D 2.402.720.0940.107D1 1.270.050E 0.490.700.0190.027F 0.610.880.0240.034F1 1.14 1.700.0440.067F2 1.14 1.700.0440.067G 4.95 5.150.1940.203G1 2.4 2.70.0940.106H210.010.400.3930.409L216.40.645L413.014.00.5110.551L5 2.65 2.950.1040.116L615.2515.750.6000.620L7 6.2 6.60.2440.260L9 3.5 3.930.1370.154DIA.3.75 3.850.1470.151L6ACDED 1FGL7L2Dia.F 1L5L4H 2L9F 2G 1TO-220MECHANICAL DATAP011CBUZ11A7/8Information furnished is believed to be accurate and reliable.However,STMicroelect r onics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third part i es which may result from its use.No license is granted by implication or otherwise under any patent or patent rights of STMicroelectro nics.Specification mentioned in this publication are subject to change without notice.This publication supersedes and replaces all informat i on previously supplied.STMicroelectronics products are not authorized for use as critical components in life support devices or systems with out express written approval of STMicroelectronics.The ST logo is a trademark of STMicroelectronics©1999STMicroelectronics –Printed in Italy –All Rights ReservedSTMicroelectronics GROUP OF COMPANIESAustralia -Brazil -China -Finland -France -Germany -Hong Kong -India -Italy -Japa n -Malaysia -Malta -Morocco -Singapore -Spain -Sweden -Switzerland -United Kingdom -U.S.A..BUZ11A8/8。

ALIENWARE M11x MOBILE手册说明书

ALIENWARE M11x MOBILE手册说明书

ALIENWARE® M11x MOBILE 手册

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注：“注”表示帮助您更好地使用计算机的重要信息。 小心：“小心”表示潜在的硬件损坏或数据丢失并告诉您如何避免此类问题。
警告：“警告”表示潜在的资产损坏、人身伤害或死亡。
__________________ 此处内容如有更改，恕不另行通知。 © 2011 Dell Inc. 保留所有权利。 未经 Dell Inc. 事先书面许可，严禁以任何方式复制这些材料。 本手册中使用的商标：Alienware®、AlienFX® 以及 AlienHead 徽标是 Alienware Corporation 的商标或注册商 标；Dell™是 Dell Inc.的商标；Microsoft®、Windows® 和 Windows 开始按钮徽标 是 Microsoft Corporation 在 美国和/或其他国家或地区的商标或注册商标；Intel® 以及 SpeedStep® 是 Intel Corporation 在美国和其他国家 或地区的注册商标，Core™是 Intel Corporation 在美国和其他国家或地区的商标；Blu‑ray Disc™是 Blu‑ray Disc Association 的商标；Bluetooth® 是 Bluetooth SIG, Inc. 拥有的注册商标。 本手册中所述及的其它商标和商品名称是指拥有相应商标和商品名称的公司或其产品。Dell Inc. 对不属于自己的商 标和商品名称不拥有任何所有权。 管制型号：P06T 管制类型：P06T003 Rev. A01 2011 - 05
3
目錄
第 3 章：使用膝上型计算机 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37 Alienware 命令中心 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38 FastAccess 人脸识别（可选） . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42 电池组 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42 使用无线控制功能 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 电源管理 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 NVIDIA Optimus 技术 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47 配置 BIOS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49
BUZ111S资料(英文)

BUZ111S资料(英文)


ISM
-
-
320
Inverse diode forward voltage VGS = 0 V, IF = 160 A Reverse recovery time VR = 30 V, IF=IS , diF/dt = 100 A/µs
VSD
- 1.25 1.8 V
trr
-
105 160 ns
Reverse recovery charge VR = 30 V, IF=lS , diF/dt = 100 A/µs
Symbol
Values
Unit
min. typ. max.
RthJC RthJA RthJA
-
-
0.5 K/W
-
-
62
-
-
62
-
-
40
Electrical Characteristics, at Tj = 25 ˚C, unless otherwise specified
Parameter
Symbol
V(BR)DSS 55
-
-V
VGS(th)
2.1
3
4
I DSS
µA
-
0.1
1
-
- 100
Gate-source leakage current VGS = 20 V, VDS = 0 V Drain-Source on-state resistance VGS = 10 V, ID = 80 A
I GSS RDS(on)
Qrr
- 0.29 0.45 µC
Data Sheet
4
05.99
BUZ 111S
Ptot ID
JWMW11RA中文资料

JWMW11RA中文资料

Distinctive CharacteristicsIndustry’s first molded rocker with TV rating. Designed tohandle large inrush current. JWM models certified for TV-5rating and JWL models for TV-8 rating.Special 5A @ 72V DC rating for JWL models to use in worldwide telecommunication equipment for power distribution applications.Prominent external insulating barriers increase insulation resistance and dielectric strength.Constructed for dust resistance with interior cover between actuator and contact area.Specially designed to break light contact welds.JWMW panel seal version meets IP67 of IEC60529Standards (similar to NEMA 4 and 6).Terminals are molded in and epoxy sealed to lock out flux, dust, and other contaminants.Housing and case of heat resistant resin meet UL 94V-0standard.Actual Size JWMGeneral SpecificationsElectrical Capacity (Resistive Load)Power Level:10A @ 125/250V AC for JWM & JWMW models; 10A @ 30V DC for JWMW;16A @ 125/250V AC for JWL models; 5A @ 72V DC for telecommunication applicationsOther RatingsContact Resistance: 10 milliohms maximum for JWM & JWMW; 20 milliohms maximum for JWL Insulation Resistance: 1,000 megohms minimum @ 500V DCDielectric Strength:2,000V AC minimum between contacts for 1 minute minimum;4,000V AC minimum between contacts & case for 1 minute minimum Mechanical Life: 25,000 operations minimum Electrical Life:25,000 operations minimumNominal Operating Force:JWM & JWMW Single Pole 3.92N & Double Pole 7.84NJWL Single Pole 5.00N & Double Pole 10.00NAngle of Throw: 26°Materials & FinishesHousing/Frame & Barrier: Polyamide (UL94V-0)Movable Contacts: Silver alloy Interior Seal for JWM & JWL: Polyphenylene sulfide Stationary Contacts:Silver alloyCase/Base: Melamine (UL94V-0) Terminals: Brass with silver platingEnvironmental DataOperating Temp Range:–25°C through +70°C (–13°F through +158°F) for JWM & JWL;–25°C through +85°C (–13°F through +185°F) for panel seal JWMW model Humidity: 90 ~ 95% humidity for 96 hours @ 40°C (104°F)Vibration:10 ~ 55Hz with peak-to-peak amplitude of 1.5mm traversing the frequency range & returning in 1 minute; 3 right angled directions for 2 hoursShock: 50G (490m/s 2) acceleration (tested in 6 right angled directions, with 5 shocks in each direction)Sealing: IP67 of IEC60529 standard for panel seal JWMW model; dust resistant inner seal for others.InstallationSoldering Time & Temp: Manual Soldering: See Profile A in Supplement section.Standards & CertificationsFlammability Standards: UL94V-0 for housing/frame & case/base of JWL, JWM, & JWMW modelsTV Ratings for UL & CSA: JWM & JWMW (TV-5) Overload Test @ 120V AC for 50 operations: UL File No. WOYR2.E44145 Steady State Current (rms) 7.5A; Minimum Inrush Current (peak) 111A CSA File No. 023535-0-000 JWM & JWMW (TV-5) Endurance Test @ 120V AC for 25,000 operations: Steady State Current (rms) 5A; Minimum Inrush Current (peak) 78A JWL (TV-8) Overload Test @ 120V AC for 50 operations: Steady State Current (rms) 12A; Minimum Inrush Current (peak) 163A JWL (TV-8) Endurance Test @ 120V AC for 25,000 operations: Steady State Current (rms) 8A; Minimum Inrush Current (peak) 117AUL & C-UL Recognized: JWM & JWMW models recognized at 10A @ 250V AC & JWMW at 10A @ 30V DC;JWL models recognized at 16A @ 250V AC; 5A @ 72V DC (specify “/U-DC” after partnumber to request UL rating be marked on DC rated switches); UL File No. WOYR2.E44145; C-UL File No. WOYR8.E44145.CSA Certified: JWM & JWMW models certified at 10A @ 250V AC;JWL models certified at 16A @ 250V AC; CSA File No. 023535-0-000VDE Approved: JWM models approved at steady state 5A, inrush 80A, resistive 10A, &motor load 6A all at 250V AC; VDE License No. 115637; JWL models approved at steady state 8A, inrush 128A, resistive 16A, & motor load 8A all at 250V AC; VDE License No. 115637. Note: JWM & JWL Double Pole, Single Throw models approved only with theinternational on-off symbols on the actuator.V D ETYPICAL SWITCH ORDERING EXAMPLEBlack HousingDPSTON-NONE-OFF CircuitDESCRIPTION FOR TYPICAL ORDERING EXAMPLEJWL21RC2ARed Rocker Capwith International ON-OFF Symbolsin Vertical OrientationTV-8 Rated16A @ 125/250V ACM Panel Seal TV-5 Rated Power Level 10A @ 125/250V ACTV-5 RatedPower Level10A @ 125/250V ACTV-8 Rated Power Level 16A @ 125/250V ACMW LRATINGSBARRIER TYPES & COLORSBarrier type designates that either AT217 (for JWM) orAT218 (for JWL) is factory assembled.Dimensions for barriers are shown in the Accessories section.JWM JWL RFlange/Housing Material: Polyamide Finish: Matte Barrier Material: Polyamide Finish: MatteNo-barrier type has a flat flange which is an integral part of the switch.JWM JWLNo BarrierBWith BarrierABlackHGrayBIvoryBarrier Colors Available:JWMW panel seal device has exterior seal of acrylonitrilebutadiene rubber covering the flange.TERMINALSCAP COLORSCap Material:Polyphenelene Oxide Finish: MatteThis switch assembly with connectors is not UL, C-UL, CSA, or VDE approved.Rocker cap is an integral part of the switch and not available separately.JWMW available with black or red caps only.BlackIvoryRedGrayBlackIvoryCap Colors Available:ABCHABHINSCRIPTIONSInscription forHorizontal MountingDPST models without inscriptions do not have VDE approval.Inscription for Vertical MountingThe IEC symbols for On-Off are supplied with Single Throw models only.Orientation of inscription must be selected.Inscription Colors: Black ink on Ivory or Gray cap. White ink on Black or Red cap.Contact factory for other inscriptions.12No InscriptionNo CodeJWM & JWMWMaterial: Polyamide Finish: MatteColors Available:JWMW panel seal models available in black housing only.HOUSINGGrayJWLThk = (0.5) .020.024.026Thk = (0.8) .031Solder Lug/.110” (2.8mm) Quick ConnectSolder Lug/.187” (4.75mm) Quick ConnectJWMWJWM11RC1AJWMW22RCATV-5 With Barrier • 10 AmpSingle & Double PolePanel Seal • TV-5 No Barrier • 10 AmpSingle & Double PoleJWM11BCA-HTV-5 No Barrier • 10 AmpSingle & Double PoleJWMPanel Thickness RangeWithout Barrier (JWM & JWMW):.039” ~ .157” (1.0mm ~ 4.0mm)With Barrier (JWM):.024” ~ .126” (0.6mm ~ 3.2mm)PANEL CUTOUTS FOR JWM MODELSSingle pole double throw models do not have terminals 2a, 2, & 2b; single throw models do not have 1a & 2a.PANEL CUTOUT FOR JWL MODELSJWL21RC2A Single pole double throw models do not have terminals 2a, 2, & 2b; single throw models do not have 1a & 2a.TV-8 With Barrier • 16 Amp Single & Double PoleJWL11BCA-H Single pole double throw models do not have terminals 2a, 2, & 2b; single throw models do not have 1a & 2a.TV-8 No Barrier • 16 AmpSingle & Double PolePanel Thickness RangeWithout Barrier:.039” ~ .157” (1.0mm ~ 4.0mm)With Barrier:.024” ~ .126” (0.6mm ~ 3.2mm)OPTIONAL DUST COVER AT4126Dust Cover for JWL RockerLid: Clear Polyvinyl ChlorideBase: Black PolyamideRecommended Temperature Range:–10° ~ +70°C (+14°F ~ +158°F)Loses pliability below 0°C (+32°F)Recommended Panel Thickness:.031” ~ .134” (0.8mm ~ 3.4mm)Assembly Instructions:(1) Insert bottom of switch through the base untilthe tabs lock into place.(2) Snap the switch into the panel.(3) Seat the lid into the grooves of the base.Top Side BottomSwitchLid Base。