74HC595中文资料

74HC595芯片是一种串入并出的芯片,在电子显示屏制作当中有广泛的应用。

74HC595是8位串行输入/输出或者并行输出移位寄存器，具有高阻、关、断状态。

三态。

特点 8位串行输入 8位串行或并行输出存储状态寄存器，三种状态输出寄存器可以直接清除 100MHz的移位频率输出能力并行输出，总线驱动串行输出；标准中等规模集成电路应用串行到并行的数据转换 Remote c ontrol holding register. 描述 595是告诉的硅结构的CMOS 器件，兼容低电压TTL电路，遵守JEDEC标准。

595是具有8位移位寄存器和一个存储器，三态输出功能。

移位寄存器和存储器是分别的时钟。

数据在SCHcp的上升沿输入，在STcp的上升沿进入的存储寄存器中去。

如果两个时钟连在一起，则移位寄存器总是比存储寄存器早一个脉冲。

移位寄存器有一个串行移位输入（Ds），和一个串行输出（Q7’）,和一个异步的低电平复位，存储寄存器有一个并行8位的，具备三态的总线输出，当使能OE时（为低电平），存储寄存器的数据输出到总线。

CPD决定动态的能耗， PD＝CP D×VCC×f1+∑(CL×VCC2×f0) F1＝输入频率，CL＝输出电容 f0＝输出频率（MHz） Vcc=电源电压引脚说明符号引脚描述内部结构结合引脚说明就能很快理解 595的工作情况引脚功能表：真值表：74595的数据端：QA--QH: 八位并行输出端，可以直接控制数码管的8个段。

QH': 级联输出端。

我将它接下一个595的SI端。

SI: 串行数据输入端。

74595的控制端说明：/SRCLR(10脚): 低点平时将移位寄存器的数据清零。

通常我将它接Vcc。

SRCK(11脚)：上升沿时数据寄存器的数据移位。

QA-->QB-->QC-->...-->QH；下降沿移位寄存器数据不变。

（脉冲宽度：5V时，大于几十纳秒就行了。

74HC595芯片资料74HC595是硅结构的CMOS器件，兼容低电压TTL电路，遵守JEDEC 标准。

74HC595是具有8位移位寄存器和一个存储器，三态输出功能。

移位寄存器和存储器是分别的时钟。

数据在SHcp的上升沿输入到移位寄存器中，在STcp的上升沿输入到存储寄存器中去。

如果两个时钟连在一起，则移位寄存器总是比存储寄存器早一个脉冲。

移位寄存器有一个串行移位输入（Ds），和一个串行输出（Q7’）,和一个异步的低电平复位，存储寄存器有一个并行8位的，具备三态的总线输出，当使能OE时（为低电平），存储寄存器的数据输出到总线。

8位串行输入/输出或者并行输出移位寄存器，具有高阻关断状态。

三态。

将串行输入的8位数字，转变为并行输出的8位数字，例如控制一个8位数码管，将不会有闪烁。

特点:8位串行输入 /8位串行或并行输出存储状态寄存器，三种状态输出寄存器（三态输出：就是具有高电平、低电平和高阻抗三种输出状态的门电路。

）可以直接清除 100MHz的移位频率输出能力并行输出，总线驱动；串行输出；标准中等规模集成电路595移位寄存器有一个串行移位输入（Ds），和一个串行输出（Q7’）,和一个异步的低电平复位，存储寄存器有一个并行8位的，具备三态的总线输出，当使能OE时（为低电平），存储寄存器的数据输出到总线。

符号引脚描述Q0…Q7 第15脚， 1， 7 并行数据输出GND 第8脚地Q7’ 第9脚串行数据输出MR 第10脚主复位（低电平）SHCP 第11脚移位寄存器时钟输入STCP 第12脚存储寄存器时钟输入OE 第13脚输出有效（低电平）DS 第14脚串行数据输入VCC 第16脚电源功能表H=高电平状态L=低电平状态↑=上升沿↓=下降沿Z=高阻NC=无变化×=无效74HC595 内含8 位串入、串/并出移位寄存器和8位三态输出锁存器。

寄存器和锁存器分别有各自的时钟输入 (SH_CP和 ST_CP) , 都是上升沿有效。

74HC595D中⽂资料_数据⼿册_参数74HC595; 74HCT5958-bit serial-in, serial or parallel-out shift register with outputlatches; 3-stateRev. 6 — 12 December 2011Product data sheet1. General descriptionThe 74HC595; 74HCT595 are high-speed Si-gate CMOS devices and are pin compatible with Low-power Schottky TTL (LSTTL). They are specified in compliance with JEDEC standard No.7A.The 74HC595; 74HCT595 are 8-stage serial shift registers with a storage register and3-state outputs. The registers have separate clocks.Data is shifted on the positive-going transitions of the shift register clock input (SHCP). The data in each register is transferred to the storage register on a positive-going transition of the storage register clock input (STCP). If both clocks are connected together, the shift register will always be one clock pulse ahead of the storage register.The shift register has a serial input (DS) and a serial standard output (Q7S) for cascading. It is also provided with asynchronous reset (active LOW) for all 8 shift register stages. The storage register has 8 parallel 3-state bus driver outputs. Data in the storage register appears at the output whenever the output enable input (OE) is LOW.2. Features and benefits8-bit serial input8-bit serial or parallel outputStorage register with 3-state outputsShift register with direct clear100MHz (typical) shift out frequencyESD protection:◆HBM JESD22-A114F exceeds2000V◆MM JESD22-A115-A exceeds200VMultiple package optionsSpecified from -40C to+85C and from -40C to+125C3. ApplicationsSerial-to-parallel data conversionRemote control holding register3-state4. Ordering information5. Functional diagramTable 1.Ordering informationType numberPackageTemperature rangeName DescriptionVersion 74HC595N -40?C to +125?CDIP16plastic dual in-line package; 16leads (300mil)SOT38-474HCT595N 74HC595D -40?C to +125?CSO16plastic small outline package; 16leads;body width 3.9mmSOT109-174HCT595D 74HC595DB -40?C to +125?CSSOP16plastic shrink small outline package; 16leads; body width 5.3mmSOT338-174HCT595DB 74HC595PW -40?C to +125?CTSSOP16plastic thin shrink small outline package; 16leads; body width 4.4mmSOT403-174HCT595PW 74HC595BQ -40?C to +125?CDHVQFN16plastic dual in-line compatible thermal enhanced very thin quad flat package; no leads; 16terminals; body 2.5 ? 3.5 ? 0.85 mmSOT763-174HCT595BQ3-state3-state 6. Pinning information3-state6.2Pin descriptionTable 2.Pin description Symbol Pin DescriptionQ11parallel data output 1Q22parallel data output 2Q33parallel data output 3Q44parallel data output 4Q55parallel data output 5Q66parallel data output 6Q77parallel data output 7 GND8ground (0 V)Q7S9serial data outputMR10master reset (active LOW)OE13output enable input (active LOW)DS14serial data inputQ015parallel data output 0V CC16supply voltage7. Functional descriptionTable 3.Function table[1]Control Input Output FunctionSHCP STCP OE MR DS Q7S QnX X L L X L NC a LOW-level on MR only affects the shift registersX↑L L X L L empty shift register loaded into storage registerX X H L X L Z shift register clear; parallel outputs in high-impedance OFF-state↑X L H H Q6S NC logic HIGH-level shifted into shift register stage 0. Contents of all shift register stages shifted through, e.g. previous state of stage 6(internal Q6S) appears on the serial output (Q7S).X↑L H X NC QnS contents of shift register stages (internal QnS) are transferred to the storage register and parallel output stages↑↑L H X Q6S QnS contents of shift register shifted through; previous contents of the shift register is transferred to the storage register and the paralleloutput stages[1]H=HIGH voltage state;L=LOW voltage state;↑=LOW-to-HIGH transition;X=don’t care;NC=no change;Z=high-impedance OFF-state.3-state8. Limiting valuesTable 4.Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions Min Max UnitV CC supply voltage-0.5+7VI IK input clamping current V I < -0.5V or V I>V CC+0.5 V-±20mAI OK output clamping current V O<-0.5V or V O > V CC + 0.5 V-±20mAI O output current V O=-0.5V to (V CC+0.5V)pin Q7S-±25mApins Qn-±35mAI CC supply current-70mAI GND ground current-70-mAT stg storage temperature-65+150?CP tot total power dissipationDIP16 package[1]-750mWSO16 package[2]-500mWSSOP16 package[3]-500mWTSSOP16 package[3]-500mWDHVQFN16 package[4]-500mW[1]For DIP16 package: P tot derates linearly with 12mW/K above 70 ?C.[2]For SO16 package: P tot derates linearly with 8mW/K above 70 ?C.[3]For SSOP16 and TSSOP16 packages: P tot derates linearly with 5.5mW/K above 60 ?C.9. Recommended operating conditions10. Static characteristicsTable 5.Recommended operating conditionsSymbol ParameterConditions74HC59574HCT595UnitMinTyp Max Min Typ Max V CC supply voltage 2.0 5.0 6.0 4.5 5.0 5.5V V I input voltage 0-V CC 0-V CC V V O output voltage 0-V CC 0-V CC V ?t/?Vinput transition rise and fall rateV CC = 2.0 V --625---ns/V V CC = 4.5 V - 1.67139- 1.67139ns/V V CC = 6.0 V--83---ns/V T ambambient temperature-40+25+125-40+25+125C Table 6.Static characteristicsAt recommended operating conditions; voltages are referenced to GND (ground =0V).Symbol ParameterConditions-40?C to +85?C -40?C to +125?C UnitMinTypMaxMinMax74HC595V IHHIGH-level input voltageV CC =2.0V 1.5 1.2- 1.5-V V CC =4.5V 3.15 2.4- 3.15-V V CC =6.0VV CC =2.0V -0.80.5-0.5V V CC =4.5V - 2.1 1.35- 1.35V V CC =6.0V- 2.81.8- 1.8VV OHHIGH-level output voltageV I =V IH or V IL all outputsI O =-20µA; V CC =2.0V 1.9 2.0- 1.9-V I O =-20µA; V CC =4.5V 4.4 4.5- 4.4-V I O =-20µA; V CC =6.0V 5.96.0- 5.9-VQ7S outputI O =-4mA; V CC =4.5V 3.84 4.32- 3.7-V I O =-5.2mA; V CC =6.0V 5.345.81- 5.2-VQn bus driver outputs I O =-6mA; V CC =4.5V 3.84 4.32- 3.7-V I O =-7.8mA; V CC =6.0V5.345.81- 5.2-V3-stateV OL LOW-leveloutput voltage V I=V IH or V ILall outputsI O=20µA; V CC=2.0V-00.1-0.1V I O=20µA; V CC=4.5V-00.1-0.1V I O=20µA; V CC=6.0V-00.1-0.1V Q7S output I O=4mA;V CC=4.5V-0.150.33-0.4V I O=5.2mA;V CC=6.0V-0.160.33-0.4V Qn bus driver outputsI O=6mA;V CC=4.5V-0.150.33-0.4V I O=7.8mA;V CC=6.0V-0.160.33-0.4VI I input leakagecurrentV I=V CC or GND; V CC=6.0V--±1.0-±1.0µAI OZ OFF-state--80-160µAC I inputcapacitance- 3.5---pF 74HCT595V IH HIGH-levelinput voltageV CC=4.5V to 5.5V 2.0 1.6- 2.0-VV IL LOW-levelinput voltageV CC=4.5V to 5.5V- 1.20.8-0.8VV OH HIGH-leveloutput voltage V I=V IH or V IL; V CC=4.5Vall outputsI O=-20µA 4.4 4.5- 4.4-V Q7S outputI O=-4mA 3.84 4.32- 3.7-V Qn bus driver outputsI O=-6mA 3.7 4.32- 3.7-VV OL LOW-leveloutput voltage V I=V IH or V IL; V CC=4.5Vall outputsI O=20µA-00.1-0.1V Q7S outputI O=4.0mA-0.150.33-0.4V Qn bus driver outputsI O=6.0mA-0.160.33-0.4VI I input leakagecurrent V I=V CC or GND; V CC=5.5V--±1.0-±1.0µATable 6.Static characteristics …continuedAt recommended operating conditions; voltages are referenced to GND (ground=0V). Symbol Parameter Conditions-40?C to +85?C-40?C to +125?C UnitMin Typ Max Min Max3-stateI OZ OFF-state--80-160µAI CC additionalsupply current per input pin; I O=0A; V I=V CC-2.1V; other inputs at V CC or GND;V CC=4.5V to5.5Vpins MR, SHCP, STCP, OE-150675-735µA pin DS-25113-123µAC I inputcapacitance - 3.5---pFTable 6.Static characteristics …continuedAt recommended operating conditions; voltages are referenced to GND (ground=0V).Symbol Parameter Conditions-40?C to +85?C-40?C to +125?C UnitMin Typ Max Min Max3-state 11. Dynamic characteristicsTable 7.Dynamic characteristicsVoltages are referenced to GND (ground = 0 V); for test circuit see Figure14.Symbol Parameter Conditions25 ?C-40?C to+85 ?C-40?C to+125 ?C UnitMin Typ[1]Max Min Max Min Max74HC595t pd propagationdelay SHCP to Q7S; see Figure9[2]V CC = 2 V-52160-200-240ns V CC = 4.5 V-1932-40-48ns V CC = 6 V-1527-34-41ns STCP to Qn; see Figure10[2] V CC = 2 V-55175-220-265ns V CC = 4.5 V-2035-44-53ns V CC = 6 V-1630-37-45ns MR to Q7S; see Figure12[3] V CC = 2 V-47175-220-265ns V CC = 4.5 V-1735-44-53ns V CC = 6 V-1430-37-45nst en enable time OE to Qn; see Figure13[4]V CC = 2 V-47150-190-225nsV CC = 4.5 V-1730-38-45nsV CC = 6 V-1426-33-38ns t dis disable time OE to Qn; see Figure13[5]V CC = 2 V-41150-190-225nsV CC = 4.5 V-1530-38-45nsV CC = 6 V-1227-33-38ns t W pulse width SHCP HIGH or LOW;V CC = 4.5 V156-19-22-nsV CC = 6 V135-16-19-nsSTCP HIGH or LOW;see Figure10V CC = 2 V7511-95-110-nsV CC = 4.5 V154-19-22-nsV CC = 6 V133-16-19-nsMR LOW; see Figure12V CC = 2 V7517-95-110-nsV CC = 4.5 V156-19-22-nsV CC = 6 V135-16-19-ns3-statet suset-up timeDS to SHCP; see Figure 10V CC = 2 V 5011-65-75-ns V CC = 4.5 V 104-13-15-ns V CC = 6 V 9 3-11-13-nsSHCP to STCP; see Figure 11V CC = 2 V 7522-95-110-ns V CC = 4.5 V 158-19-22-ns V CC = 6 V 137-16-19-ns t hhold timeDS to SHCP; see Figure 11V CC = 2 V 3-6-3-3-ns V CC = 4.5 V 3-2-3-3-ns V CC = 6 V3-2-3-3-ns t recrecovery timeMR to SHCP; see Figure 12V CC = 2 V 50-19-65-75-ns V CC = 4.5 V 10-7-13-15-ns V CC = 6 V 9-6-11-13f maxmaximum frequencySHCP or STCP; see Figure 9 and 10V CC = 2 V 930- 4.8-4-MHz V CC = 4.5 V 3091-24-20-MHz V CC = 6 V35108-28-24-MHz C PDpower dissipation capacitancef i = 1 MHz; V I =GND to V CC [6][7]-115-----pF74HCT595; V CC = 4.5 V to 5.5 V t pdpropagation delay SHCP to Q7S; see Figure 9[2]-2542-53-63ns STCP to Qn; see Figure 10[2]-2440-50-60ns MR to Q7S; see Figure 12[3]-2340-50-60ns t en enable time OE to Qn; see Figure 13[4]-2135-44-53ns t dis disable time OE to Qn; see Figure 13[5] -1830-38-45ns t Wpulse widthSHCP HIGH or LOW;see Figure 9166-20-24-ns STCP HIGH or LOW; see Figure 10165-20-24-ns MR LOW; see Figure 12208-25-30-ns t suset-up timeDS to SHCP; see Figure 10165-20-24-ns SHCP to STCP; see Figure 11168-20-24-ns t hhold timeDS to SHCP; see Figure 113-2-3-nsTable 7.Dynamic characteristics …continuedVoltages are referenced to GND (ground = 0 V); for test circuit see Figure 14.Symbol Parameter Conditions25 ?C -40?C to +85 ?C -40?C to +125 ?C Unit Min Typ [1]Max Min Max Min Max3-state[1]Typical values are measured at nominal supply voltage.[2]t pd is the same as t PHL and t PLH .[3]t pd is the same as t PHL only.[4]t en is the same as t PZL and t PZH .[5]t dis is the same as t PLZ and t PHZ .[6]C PD is used to determine the dynamic power dissipation (P D in µW).P D =C PD ?V CC 2?f i +∑(C L ?V CC 2?f o )where:f i=input frequency in MHz;f o =output frequency in MHz;∑(C L ?V CC 2?f o )=sum of outputs;C L =output load capacitance in pF;V CC =supply voltage in V.[7]All 9outputs switching.12. Waveformst rec recovery time MR to SHCP; see Figure 1210-7-13-15-ns f max maximum frequencySHCP and STCP; see Figure 9 and 103052-24-20-MHz C PDpower dissipation capacitancef i = 1 MHz; V I =GND to V CC [6] [7]-130-----pFTable 7.Dynamic characteristics …continuedVoltages are referenced to GND (ground = 0 V); for test circuit see Figure 14.Symbol Parameter Conditions25 ?C -40?C to +85 ?C -40?C to +125 ?C Unit Min Typ [1]Max Min Max Min Max3-stateTable 8.Measurement points Type Input OutputV M V M74HC5950.5V CC0.5V CC 74HCT595 1.3V 1.3V3-stateTable 9.Test data74HC595V CC6ns50 pF1kΩopen GND V CC74HCT5953V6ns50 pF1kΩopen GND V CC3-state 13. Package outlineDIP16: plastic dual in-line package; 16 leads (300 mil)SOT38-4Fig 15.Package outline SOT38-4 (DIP16)3-state SO16: plastic small outline package; 16 leads; body width 3.9 mm SOT109-1Fig 16.Package outline SOT109-1 (SO16)3-state SSOP16: plastic shrink small outline package; 16 leads; body width 5.3 mm SOT338-1Fig 17.Package outline SOT338-1 (SSOP16)3-state TSSOP16: plastic thin shrink small outline package; 16 leads; body width 4.4 mm SOT403-1Fig 18.Package outline SOT403-1 (TSSOP16)。