电子元器件应用-Interfacing the TLV1562 Parallel ADC to the TMS320C54x DSP

第三章倍频器设计图３＿４倍频器模拟实物图３．３倍频器部件设计３．３．１微带到波导过渡微波、毫米波元器件以及子系统最终要应用于整机系统或要连接到测试系统中，这就要求输入、输出接口必须为标准矩形波导。

从标准波导至Ⅱ微带电路要求有良好的过渡，在过渡过程中，不但要完成不同结构的过渡，而且还要实现阻抗变换，使电磁能量损失尽可能的小。

除此之外，还要求装卸容易，重复性、一致性好且易于加工。

波导到微带过渡结构可由多种方式来实现，如微带探针形式Ｉ捌，鳍线过渡【矧，小孔耦合Ｉ矧，脊波导【２５】【圳，本章探索了两种方式。

３．３．１．１脊波导【２７】无论哪个标准波导的等效阻抗都比标准微带线特性阻抗５０Ｑ要高得多，为了保证两者连接得到较好的匹配，必须在标准波导和微带线之间加变阻器，把波导的等效阻抗逐步降低，这可以用连续过渡或阶梯过渡来实现，前者加工较为复杂（如指数线），且为了满足一定驻波比的要求，过渡段长度也不短，所以一般采用阶梯过渡（即１／４多节变阻器）。

单脊波导就其特点来说，工作频带宽。

另外，当金属脊较高时，电磁能量主要集中于脊下，相当于脊下等效电容增加，等效阻抗当然随之降低，若脊宽与脊高选择合理，机械尺寸上也便于与微带线匹配连接。

当脊高变低，相当于脊下等２３电子科技大学硕士学位论文导波波长：铲７丽五‰＝冬移啪娆２１２·６６ｒａｍ以。

＾｜，ｍ觎２９．０８８ｎｕｎ毛＝挠鸵～（３·２３）◇一２４）其他段作相似计算。

最后得出整个初始脊波导尺寸：Ｓ＝１．４２ｍｍ磊＝ｏ。

１２７ｒａｍ磊＝２，５ｍｍ畦＝ｏ．５７ｒａｍ４－－２。

２８ｒａｍ或一１．９５ｍｍ乞＝２。

４６７ｍｍ黧３－６脊渡霉程ＨＦＳＳ串静仿真模型”“”“船器“”８矗即日一茹ｆ鬲●●●‘ｌ＿Ｉｌ，．｝ｌｉ｛｛ｌｌｌ｛～ｐｉ￡ｊ…ｔ—Ｌ｝］”Ｊ啊｜｜；｛，，ｔ｛ｌ｜｝ｉ．．ｊ一｛－｛｛ｌ，一，一｛：Ｍ一＼广！｝Ｎ；再沁＿．八ｌ卜Ｚ。

ｄ●＿＿一Ｎ？７ｉ｛‘；”㈠Ｋ’７…Ｈｎ｛ｒｒＶ斗÷一—：一３．｛÷一曩一丫一｛＾一｛；｛｛·｜ｌ…，｛｛ｉ｝｛ｔ｜ｔ”…、”…’’…、＾‘ｔ一＋…””””Ｒ＿ＭＰ””“掰３４脊滚霉在ＨＦＳＳ审鹃待囊结采根据设计尺寸在ＨＦＳＳ中仿真并进行优化，得到仿真结聚如图３—７。

光通信关键器件Interleaver的原理和进展
林林
【期刊名称】《东莞理工学院学报》
【年(卷),期】2006(013)003
【摘要】Interleaver(梳状分波器)是DWDM光通信系统中的重要无源器件.对比介绍几种类型Interleaver的原理、结构、性能,并分析它们的发展趋势.
【总页数】4页(P53-56)
【作者】林林
【作者单位】广东医学院,生物医学工程教研室,广东,东莞,523808
【正文语种】中文
【中图分类】TN914
【相关文献】
1.全光通信用关键光电子器件 [J], 何兴仁
2.空间光通信用光收发器件进展及典型应用 [J], 张瑞君
3.全光通信网光电器件及其最新进展(2) [J], 金耀辉;曾庆济;唐晓东;肖石林
4.光通信中关键器件-耦合器 [J], 冯霞;李平;葛祥友
5.日盲紫外光通信系统关键器件 [J], 周志斌;肖沙里;汪科;袁浩;徐志敏
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元器件知识大全：RFID新一代高级封装技术资料整理者：tughghjghj在当今飞速发展的电子环境中，芯片制造商和封装技术供应商们发现传统的前段制造设备，诸如光刻步进器等，可能会实现成本高效的后段工艺流程（BEOL）器件封装。

尽管高级封装市场的发展空间最初是被PCs行业的蓬勃发展带动起来的，但是现在它们已经不再是主要的增长催化因素。

通信以及手持设备，如手机、PDAs（个人数字助理）、便携式游戏机以及个人通讯系统正在成为新增长阶段的推动因素。

随着数字消费应用的爆炸式发展－性能和波形系统成为必须启用高级封装（AP）技术的必要条件。

在未来五年内，预计通讯芯片组、图形处理器、集成无源元件以及高速PC内存元件将成为AP技术的主要诉求。

随着领先的逻辑芯片制造商们需求量的不断增大，我们共同见证了AP 市场的成长过程。

然而，这一细分市场的另一个转折点可能会来自高速PC内存元件对高级封装技术的诉求。

不管终端设备的推动因素如何强劲，仅高性能封装技术的需求不断升级，就带动了金凸块技术和锡铅凸块技术的需求增长，同时获得增长的还包括晶圆级封装技术和后护层技术。

本文将分析当前的以及正在不断涌现的AP应用，其中光蚀刻设备以其突出的优势将获得部署良机。

主要的AP光刻市场光刻技术是影响晶圆植球品质的最重要因素之一。

如图1所示，推动AP市场发展的因素是多元化的。

举例说明，液晶显示器（LCDs）是一款产量非常高的成熟产品，也是金凸块技术的主要供应市场。

新的晶圆级封装（WLP）技术将即将渗透到微处理器和射频（RF）器件市场。

同时我们也期待PPL技术能够在高级器件封装领域获得增长金凸块技术金凸块技术主要用于液晶显示器（LCD）面板上驱动ICs的封装。

尽管日本已经成为业界领先的LCD面板和驱动ICs制造国，然而，出于成本和供应链等环节的考量，显示器制造还是在向其它地区的商业制造厂平稳过渡－台湾、韩国以及中国，其中向中国的制造厂过渡正在逐步攀升。

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高端电子元件市场现状据统计，目前世界电子元件的市场规模大约每年1600亿美元左右，估计到2022年，市场规模将突破2000亿美元。

电子元件几个较大的应用领域包括工业电子产品、计算机、消费类电子以及通信。

在各类整机电路中，无源元件和有源器件的数量比例通常在20:1至50:1左右，其中一些高端电子产品，如移动手机、笔记本电脑等当中，无源元件的比例更高，有时可达到100:1。

无源元件的成本平均占整机中元器件总成本的1/3左右。

随着电子产品功能的进一步提高，整机对元器件数量的需求也逐步增加。

随着集成电路（微处理器）集成度的提高，其周边的无源元件的需要量也逐步上升。

随着世界电子制造业向中国大规模转移，我国的电子元件市场以近年来每年都20%的增长率增长。

粗略测算目前我国电子元件市场容量约在350亿美元左右，在不久的将来，我国可望成为全球最大的电子元件消费市场。

一些重要的高端电子元件的国际市场状况如下：多层陶瓷电容器（MLCC）多层陶瓷电容器目前国际上用量最大、进展最快的片式元件之一。

MLCC主要应用于各类军用、民用整机的震荡、耦合、滤波、旁路电路中，应用领域已经拓展到自动掌握仪表、计算机、手机、数字家电、汽车电等行业。

目前，多层陶瓷电容器已构成了电容器市场的主体，在大容量市场（10μF以下）中，陶瓷电容器已部分取代钽电容器，而在1μF以下，陶瓷电容器占肯定优势。

全球市场的需求量从1998年的3070亿只，增至2022年11000亿只。

年增长速度近20%。

市场需求巨大，产业化市场前景特别宽阔。

片式电感类元件多层片式电感类元件包括了一大类具有叠层式介质/线圈结构的新型电子元件，是电感类元件进展的方向，也是三大类无源片式元件中技术含量最高的一大类。

目前，这类元件已形成了规模相当大的产业和近百亿美元的国际市场。

片式电感器的主要应用领域包括移动通信、计算机、音像产品、家电、办公自动化等。

估计在今后若干年中，随着第三代移动通信技术、数字电视、高速计算机、蓝牙产品等新一代数字化电子产品的推出和世界各国EMI掌握标准的相继制订，对各种片式电感类元件，特殊是抗EMI类片式电感元件的需求将急剧上升。

光电子器件的创新与应用随着科学技术的不断发展，光电子技术作为新兴的技术领域，已经逐渐成为了人类社会中的不可或缺的一部分。

在这一领域中，光电子器件作为其中的核心组成部分，扮演着不可替代的角色。

光电子器件的创新性发展和应用，也成为了科学技术领域中最具有前瞻性和发展空间的一项工作。

一、光电子器件的基本概念光电子器件是指在光电子技术的基础上，能够将光信号转换为电信号，或者将电信号转换为光信号，并以此完成信息传输、显示、存储等多种功能的电子器件。

光电子器件的种类繁多，涉及到光电探测器、光纤通信、激光器、LED发光二极管等多个领域，并在医疗、通讯、生产等领域中得到广泛应用。

二、光电子器件的创新光电子器件的创新涉及到技术和工艺两个方面。

其中技术方面主要表现在光电探测、光电转换、光调制等技术的发展上，而工艺方面则包括晶体生长、微加工、组装等方向的研究。

1.技术创新技术创新是光电子器件创新的重要方向。

针对传统器件在性能、可靠性、应用领域等方面存在的局限性，科研人员借助新材料、新工艺和新理念，逐渐推动了光电子器件的技术进步。

例如，在光电探测器的研究中，利用单层碳纳米管、人工合成纳米结构、金属半导体纳米结构等新材料或结构进行设计开发，将探测器的灵敏度、响应速度、性能稳定性等方面都得到极大的提升。

在光调制器领域，研究人员结合现代微电子技术，成功地实现了光子晶体光调制器、电吸收光调制器、混合集成光调制器等多种功能完备、性能优越的光调制器。

2.工艺创新工艺创新是光电子器件创新的另一个重要方向。

随着科技的不断发展，光电子器件制备工艺也在不断发展。

比如在光纤通信技术中，通过改变光纤的材料合成工艺、诸如拉锥、折弯等工艺操作研究，成功地实现了高品质光纤的制备。

在半导体激光器领域中，采用更多的微电子技术，包括刻蚀、离子注入、多量子阱生长等技术，提高了半导体激光器的制造效率、器件质量、可靠性和成品率。

三、光电子器件的应用光电子器件的广泛应用，从某种意义上来说，既体现了光电子器件创新成果的重要性，又为科学技术的发展带来了众多机遇。

FEATURES APPLICATIONSDESCRIPTIONRI-I15-112B-02SCBS825–JULY2004–REVISED DECEMBER2005Tag-it™HF-I PLUS TRANSPONDER INLAYSMEDIUM RECTANGLE•Product Authentication•ISO/IEC15693-2,-3;ISO/IEC18000-3Compliant•Library•Supply-Chain Management•13.56-MHz Operating Frequency•Asset Management•2048-Bit User Memory in64-Bit×32-Bit•Ticketing/Stored ValueBlocks•User and Factory Lock Per Block•Application Family Identifier(AFI)•Data Storage Format Identifier(DSFID)•Combined Inventory Read BlockTexas Instruments Tag-it™HF-I plus transponder inlays consist of13.56-MHz high-frequency(HF)transponders that are compliant with the ISO/IEC15693and ISO/IEC18000-3global open standards.These products offer a user-accessible memory of2048bits,organized in64blocks,and an extensive command set available in six different antenna shapes,with frequency offset for integration into paper,PVC,or other substrates.The Tag-it HF-I plus transponder inlays are manufactured with TI’s patented laser tuning process to provide consistent read performance.Prior to delivery,the transponders undergo complete functional and parametric testing,in order to provide the high quality that customers have come to expect from TI.The Tag-it HF-I plus transponder inlays are well suited for a variety of applications including,but not limited to, product authentication,library,supply-chain management,asset management,and ticketing/stored value applications.Please be aware that an important notice concerning availability,standard warranty,and use in critical applications of TexasInstruments semiconductor products and disclaimers thereto appears at the end of this data sheet.Tag-it is a trademark of Texas Instruments.PRODUCTION DATA information is current as of publication date.Copyright©2004–2005,Texas Instruments Incorporated Products conform to specifications per the terms of the TexasInstruments standard warranty.Production processing does notnecessarily include testing of all parameters.RI-I15-112B-02SCBS825–JULY 2004–REVISED DECEMBER 2005SPECIFICATIONS (1)PART NUMBER RI-I15-112B-02Supported standardISO/IEC 15693-2,-3;ISO/IEC 18000-3Recommended operating frequency 13.56MHz14.1MHz ±200kHz (includes frequency offset to compensate PVC Passive resonance frequency (at 25°C)lamination)Typical required activation field strength to read (at 25°C)98dB µA/m (2)Typical required activation field strength to write (at 25°C)101dB µA/m (2)Factory programmed read-only number 64bitsMemory (user programmable)2k bits organized in 64-bit ×32-bit blocks Typical programming cycles (at 25°C)100,000Data retention time (at 55°C)>10yearsSimultaneous identification of tags Up to 50tags per second (reader/antenna dependent)Antenna size 34mm ×65mm (~1.34in ×~2.56in)Foil width 48mm ±0.5mm (1.89in ±0.02in)Foil pitch 101.6mm +0.1mm/–0.4mm (4in)Chip area:0.355mm (~0.014in)Thickness Antenna area:0.085mm (~0.0033in)Base materialSubstrate:PET (polyethylenetherephtalate);Antenna:aluminum Smallest bending radius allowed 18mm (~0.71in)Operating temperature–25°C to 70°CStorage temperature (single inlay)–40°C to 85°C (warpage may occur at upper temperature range)Storage temperature (on reel)–40°C to 40°CSingle-row tape wound on cardboard reel with 500-mm diameter Reel outer width:approximately 60mm (~2.36in)DeliveryReel inner width:approximately 50mm (~1.97in)Hub diameter:76.2mm (3in)Typical quantity of good units per reel 5,000(1)For highest possible read-out coverage,operate readers at a modulation depth of 20%or higher.(2)After integration into paperSUPPORTED COMMAND SETREQUEST MODE (1)REQUESTREQUEST CODEINVENTORYADDRESSEDNON-ADDRESSEDSELECTAFI ISO 15693Mandatory and Optional Commands Inventory 0x01ü–––üStay Quiet0x02–ü–––Read_Single_Block 0x20üüüüüWrite_Single_Block 0x21–üüü–Lock_Block 0x22–üüü–Read_Multi_Blocks 0x23üüüüüWrite_Multi_Blocks 0x24–––––Select Tag 0x25–ü–––Reset to Ready 0x26–üüü–Write_AFI 0x27–üüü–Lock_AFI 0x28–üüü–Write DSFID0x29–üüü–(1)ü=Implemented,–=Not applicable2Submit Documentation 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production.Samples may or may not be available.OBSOLETE:TI has discontinued the production of the device.(2)Eco Plan -The planned eco-friendly classification:Pb-Free (RoHS),Pb-Free (RoHS Exempt),or Green (RoHS &no Sb/Br)-please check /productcontent for the latest availability information and additional product content details.TBD:The Pb-Free/Green conversion plan has not been defined.Pb-Free (RoHS):TI's terms "Lead-Free"or "Pb-Free"mean semiconductor products that are compatible with the current RoHS requirements for all 6substances,including the requirement that lead not exceed 0.1%by weight in homogeneous materials.Where designed to be soldered at high temperatures,TI Pb-Free products are suitable for use in specified lead-free processes.Pb-Free (RoHS Exempt):This component has a RoHS exemption for either 1)lead-based flip-chip solder bumps used between the die and package,or 2)lead-based die adhesive used between the die and leadframe.The component is otherwise considered Pb-Free 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TI products are neither designed nor intended for use in automotive applications or environments unless the specific TI products are designated by TI as compliant with ISO/TS16949requirements.Buyers acknowledge and agree that,if they use any non-designated products in automotive applications,TI will not be responsible for any failure to meet such requirements.Following are URLs where you can obtain information on other Texas Instruments products and application solutions:Products ApplicationsAmplifiers AudioData Converters AutomotiveDLP®Products BroadbandDSP Digital ControlClocks and Timers MedicalInterface MilitaryLogic Optical NetworkingPower Mgmt SecurityMicrocontrollers TelephonyRFID Video&ImagingRF/IF and ZigBee®Solutions WirelessMailing Address:Texas Instruments,Post Office Box655303,Dallas,Texas75265Copyright©2009,Texas Instruments Incorporated。

现代电子技术Modern Electronics Technique2023年6月1日第46卷第11期Jun.2023Vol.46No.110引言随着信息时代的飞速发展，各种通信需求不断呈现，相应的各类通信系统也应运而生，例如GSM （全球移动通信系统）、3G （第三代移动通信系统）、4G （第四代移动通信系统）、5G （第五代移动通信系统）等。

通信系统随着技术发展而更新迭代，对于射频前端器件的要求也日新月异。

微带带通滤波器是一种常用的无源器件，在滤除杂波、减小干扰、频率选择等应用中起到非常关键的作用[1]。

交指型带通滤波器由于结构简单、适用频率及相对带宽比较宽、产生谐波频率近似于三倍谐振频率，在工程应用中受到青睐。

随着技术的发展，微带带通滤波器尺寸的小型化、频率的高选择性需求越来越受到重视[2]。

小尺寸意味着整体模块在重量和空间上的轻量化；高选择性意味着器件性能上的优势。

在实现手段上，交指型带通滤波器较为常见的小型化方式是优化谐振结构以及缩小谐振单元的尺寸。

而对于高选择性，则主要关注其在带外抑制性能的提升。

本文设计了一种小尺寸且改善了抑制性能的交指型带通滤波器，可满足系统日益增加的小型化和高性能需求。

在小型化方面，文献[3]中总结介绍了LTCC （低温共烧陶瓷）技术、SIR 技术（阶梯阻抗谐振器）、DGS 技术（缺陷接地结构）、双模滤波器、左手材料等小型化技术。

但LTCC 技术对制备工艺要求较高，DGS 技术对加工精度有一定影响，双模滤波器以及左手材料的使用范围都具备一定的限制。

一种新型SIR 交指微带带通滤波器的设计杨新宇（中国电子科技集团有限公司第十研究所，四川成都610000）摘要：交指带通滤波器是工程应用中常用的带通滤波器，但随着产品的小型化及带外抑制性能要求的多样化，常规交指带通滤波器在使用上受到较多限制。

文中设计了一种新型SIR 交指型微带带通滤波器结构，对常规交指微带带通滤波器进行小型化以及抑制性能优化。

单片有源滤波器LTC1562的原理与应用
王伟杰;卫军;肖勇军
【期刊名称】《国外电子元器件》
【年(卷),期】2003(000)009
【摘要】LTC1562是美国LinearTechnology Corp推出的连续时间单片有源RC 滤波器集成器,它不需要外部时钟信号.通过该芯片和凌特公司的FilterCAD软件可以方便的设计出各种不同类型的滤波器.,文中介绍了LTC1562内部结构、特点,给出了利用FliterCAD软件设计的一个八阶切比雪夫有源带通滤波器的的应用电路.【总页数】2页(P73-74)
【作者】王伟杰;卫军;肖勇军
【作者单位】哈尔滨工业大学,黑龙江,哈尔滨,150001;哈尔滨工业大学,黑龙江,哈尔滨,150001;哈尔滨工业大学,黑龙江,哈尔滨,150001
【正文语种】中文
【中图分类】TN713
【相关文献】
1.电力有源滤波器的原理与应用 [J], 浣喜明
2.单片集成有源滤波器LTC1562的应用 [J], 冯春媛;饶中洋
3.在FilterCAD平台上用LTC1562设计有源滤波器 [J], 李小英
4.基于LTC1562有源滤波器的设计与实现 [J], 冉茂华;陈三宝
5.基于LTC1562有源滤波器的设计与实现 [J], 冉茂华;陈三宝
因版权原因，仅展示原文概要，查看原文内容请购买。

UNISONIC TECHNOLOGIES CO., LTDL1806PreliminaryCMOS IC3A, ULTRA LOW DROPOUT (0.23V@3A) LINEAR REGULATOR⏹DESCRIPTIONThe UTC L1806 is a typical LDO with the features of very low dropout voltage as low as 0.23V at output current 3A.For normal operation, two supply voltages are necessary. One called control voltage from other equipment can shutdown the output voltage and it should pull and hold the voltage of EN pin less than 0.5V. Another one is the main supply voltage whose purpose is for main power conversion, to keep the power dissipation low, and to make the dropout voltage lower.Internally, in the UTC L1806, there’re many functions which can be seen in the block figure to prevent the IC from being damaged. Internal Power-On-Reset (POR) circuit can control the two supply voltages to prevent fault operations of the circuit; the thermal shutdown circuit is able to protect the device from over thermal operation, and a current limit function will keep the device work safely under current over-loads.The UTC L1806 can be used as an ideal to provide well supply voltage in the applications, such as front-side-bus termination on motherboard, NB applications, front side bus V TT (1.2V/3A) andnote book PC applications.⏹FEATURES*Low Dropout V D =0.23V(typ.)@ I OUT =3A *Low ESR Output Capacitor *V REF =0.8V*Fast Transient Response*Output Voltage Adjustable through External Resistors *POR(Power-On-Reset) controlling V CNTL and V IN *With internal Soft-Start*Internal Current Limit Protection *Internal Under Voltage Protection *Hysteretic Thermal Shutdown*With Power-OK Output (with a Delay Time)*Low Shutdown Quiescent Current (<30 uA)*Shutdown/Enable Control Function⏹ORDERING INFORMATIONOrdering NumberPackage PackingLead FreeHalogen Free L1806L-SH2-R L1806G-SH2-R HSOP-8Tape Reel L1806L-K10-3030-R L1806G-K10-3030-RDFN3030-10Tape Reel⏹MARKING⏹PIN CONFIGURATION1NC 2345678910V OUT NCFB PGENNC V IN NC V CNTL GND(Top View)DFN3030-10HSOP-8GND1234PG EN V IN V CNTLNCV OUT FBGND ⏹PIN DESCRIPTIONPIN NO.PIN NAMEDESCRIPTIONHSOP-8 DFN3030-1015PGPower Good.Output open drain to indicate the status of V OUT via monitoring the FB pin. This pin is pulled low when the voltage isoutside the limits, during thermal shutdown and if either V CNTL or V IN go below their thresholds.26EN Enable Pin. Driving this pin low will disable the part. When leftfloating an internal current source will pull this pin high and enableit.38V INPower Input Pin for current supply. Connect a decoupling capacitor(≥10µF) as close as possible to the pin for noise filtering 410 V CNTL BIAS supply for the controller, recommended 5V. Connect adecoupling capacitor (≥1µF) as close as possible to the pin fornoise filtering.5 1, 3, 7,9 NC No Connection62V OUT Power output pin74FBFeedback to set the output voltage via an external resistor dividerbetween V OUT and GND8-GND GroundExposed PadExposed Pad GND GroundBLOCK DIAGRAM⏹ABSOLUTE MAXIMUM RATINGPARAMETER SYMBOL RATINGS UNIT Supply Voltage (V CNTL to GND) V CNTL-0.3 ~ +7V Supply Voltage (V IN to GND) V IN-0.3 ~ + 4.0VEN and FB to GND V I/O-0.3 ~ V CNTL+0.3VPG to GND V PG-0.3 ~ +7V Junction Temperature T J150°СStorage Temperature T STG-65 ~ +150°СNote: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.⏹RECOMMENDED OPERATING CONDITIONSPARAMETER SYMBOL RATINGS UNIT Supply Voltage Control V CNTL3~5.5V Supply Voltage Input V IN 1.2~3.65VOutput Voltage V CNTL=3.3±5%V OUT0.8 ~ 1.2 V V CNTL=5.0±5% +0.8 ~ V IN-0.2VOutput Current I OUT0 ~ 4 A ⏹THERMAL RESISTANCES CHARACTERISTICSPARAMETER SYMBOL RATINGS UNITJunction to Ambient HSOP-8θJA90 (Note 1) °C/W DFN3030-10 72 (Note 2) °C/WNotes: 1. θJA is measured with the component mounted on a high effective thermal conductivity test board in free air.The exposed pad of HSOP-8 is soldered directly on the PCB.2.The PCB area is 4 times larger than that of IC’sELECTRICAL CHARACTERISTICSTYPICAL APPLICATION CIRCUIT ing an Output Capacitor with ESR≥18mΩing an MLCC as the Output CapacitorUTCL1806POKENEnablePGGNDFBOUTOUTVV CNTLR3=1kΩR2=78kR1=39kΩOUT=22µFOUT+1.2V/3AV IN+1.5VCNTL=1µFC IN=22µF=56pFV CNTL+5V3412V OUT (V) R1 (kΩ)R2(kΩ)C1(pF)1.0543137.6471.52730.86821.81512150APPLICATION INFORMATION1.Power SequencingWhen there’s no main voltage applied at V IN, it is suggested not to apply a voltage to V OUT for a long time. Because the internal parasitic diode (between V OUT to V IN) will conduct and dissipate power, there’s no protection.2.Output CapacitorA proper output capacitor to maintain stability and improve transient response over temperature and current is necessary. Proper ESR (equivalent series resistance) and capacitance of the output capacitor should be selected properly for stability of the normal operation and good load transient response.Many kinds of capacitors can be used as an output capacitor, such as ultra-low-ESR capacitors (like ceramic chip capacitors), low-ESR bulk capacitors (like solid Tantalum, POSCap, and Aluminum electrolytic capacitors). And also the value of the output capacitors’ can be increased without limit.In the applications with large stepping load current, the low-ESR bulk capacitors are normally recommended.Decoupling ceramic capacitors are recommended to be placed at the load and ground pins very closely and also the impedance of the layout must be minimized.3.Input CapacitorIn order to prevent the input rail from dropping, the proper input capacitor to supply current surge during stepping load transients is required. Because the limited slew rate of the surge currents, more parasitic inductance needs more input capacitance.Ultra-low-ESR capacitors (>100mF, ESR<300mW) is recommended for the input capacitor.4.Feedback NetworkThe following figure shows the feedback network between V OUT GND and FB pins. Working with the internal error amplifier, the feedback network can provide proper frequency response for the UTC L1806.V OUT。

IR2161被美国电子产品杂志社评为2004年度优胜产品
佚名
【期刊名称】《电子元器件应用》
【年(卷),期】2005(007)004
【摘要】2005年1月美国加里福尼亚ELSEGUNDO讯，国际整流器(IR)公司生
产的照明控制集成电路——IR2161型卤灯电子变压器专用智能半桥驱动器被美国《电子产品》杂志社(位于纽约州公园市)评为2004年度优胜产品，优胜产品名单
刊登在《电子产品》杂志2005年1月刊上。

该杂志社依照各种产品在技术、应用、设计、价格和性能等方面的重大进展每年评选一次优胜产品。

【总页数】1页(P10)
【正文语种】中文
【中图分类】TN06
【相关文献】
1.关于荣获"2004-2005年度上海市塑料管道产品质量诚信优胜企业"的公告 [J],
2.《森林防火》杂志社被评为2004～2006年度全国森林防火先进单位 [J],
3.安捷伦高性能示波器被《电子产品》杂志命名为2004年度产品 [J], 李雅晨
4.Agilent高性能示波器被“电子产品”杂志命名为2004年度产品 [J],
5.Agilent高性能示波器被“电子产品”杂志命名为2004年度产品——以13GHz 带宽实时示波器和探头系统领跑业界 [J],
因版权原因，仅展示原文概要，查看原文内容请购买。

应用于Virtex系列FPGA的IR-CLB资源的联合测试和诊断李文昌;万理;阮爱武;于敦山
【期刊名称】《微电子学与计算机》
【年(卷),期】2014(31)1
【摘要】FPGA(Field Programmable Gate Arrays)作为现场可编程门阵列,其丰富的内部资源和强大的功能越来越受到应用者的青睐.随着FPGA规模的增大,其可靠性问题日益受到重视.因此,如何保证FPGA可靠性成为了FPGA生产厂商和应用人员需要共同面对的问题.从FPGA的可靠性这一重要性出发,针对Virtex系列XCV300芯片的故障测试,根据互联资源的特点,创新性地提出了针对IR和CLB资源的IR-CLB资源联合测试方法.实现了IR和CLB资源的同时测试,并且利用FPGA 底层布线工具得到了实际测试配置图形.
【总页数】4页(P5-7)
【关键词】现场可编程门阵列;互联资源;可编程逻辑模块;联合测试
【作者】李文昌;万理;阮爱武;于敦山
【作者单位】北京大学信息科学技术学院;电子科技大学电子薄膜与集成器件国家重点实验室
【正文语种】中文
【中图分类】TP206
【相关文献】
1.Virtex-Ⅱ系列FPGA自主监控系统设计与实现 [J], 张衡;高媛;王凤姣
2.基于VIRTEX架构的FPGA布线资源测试技术 [J], 王建超;陆锋;张凯虹
3.Virtex-Ⅱ系列FPGA的回读与部分重配置 [J], 周秀娟;叶荣润
4.面向航天应用的Virtex5系列FPGA单粒子翻转防护技术 [J], 赖晓玲;贾亮;朱启
5.Virtex7系列FPGA宇航应用存储电路与配置加载设计 [J], 魏祎;罗小成;华伊;张朝路;钟鸣
因版权原因，仅展示原文概要，查看原文内容请购买。

塑料半导体器件及其应用
高季荪
【期刊名称】《电子元器件应用》
【年(卷),期】2001(003)001
【摘要】本文简要介绍塑料半导体器件的原理、制作工艺及其应用前景.
【总页数】4页(P23-26)
【作者】高季荪
【作者单位】西安无线电二厂,西安,710016
【正文语种】中文
【中图分类】TN304.52
【相关文献】
1.热固性塑料封装成型对半导体器件参数数值的影响研究 [J], 徐德军;何伟伟
2.电工与电子讲座（特殊半导体器件及其应用部分）：第一讲恒流器件及其应用（一） [J], 陈华山;刘永强
3.塑料半导体器件及其应用 [J], 高季荪
4.热固性塑料封装成型对半导体器件参数数值的影响研究 [J], 徐德军;何伟伟;
5.塑料封装对半导体器件质量的影响 [J], 韩仁宝
因版权原因，仅展示原文概要，查看原文内容请购买。

35族半导体band gap 2 左右-回复35族半导体是指周期表中元素的35号族，包括砷、锑和铋。

而半导体是一种介于导体和绝缘体之间的材料，具有特殊的能带结构和导电特性。

在半导体中，带隙是一个非常重要的概念，它决定了材料的电子能级结构和光电特性。

本文将重点讨论35族半导体的带隙，并对其物理、电子结构以及应用进行详细的解析。

首先，我们来仔细了解一下什么是带隙。

在固体材料中，原子间的相互作用形成了能带，其中包括价带和导带两个主要能带。

价带是占据态最高的电子能级，而导带则是尚未被电子占据的能级。

带隙指的是这两个能带之间的能量间隔，也就是价带的最高能级与导带的最低能级之间的差异。

带隙的存在决定了材料的导电性质，较小的带隙意味着更容易形成导电能级，而较大的带隙则意味着材料更难导电。

对于35族半导体，其带隙约为2电子伏特左右。

具体来说，砷（As）和锑（Sb）的带隙约为0.35电子伏特，而铋（Bi）的带隙约为0.88电子伏特。

相对于其他常见的半导体材料，如硅（Si）的1.1电子伏特和锗（Ge）的0.67电子伏特，35族半导体的带隙较小，使其在一些特殊应用中具有独特的优势。

接下来，我们来探讨35族半导体带隙大小对其物理和电子结构的影响。

由于带隙较小的特点，35族半导体更容易被光子激发，即光照射后电子从价带跃迁到导带。

这种光电激发行为使得35族半导体在光电器件中表现出色。

此外，由于带隙小，35族半导体具有较高的载流子浓度和较强的导电性能，使其在高频器件和功率器件中有广泛的应用。

值得一提的是，砷化镓（GaAs）是一种常见的35族半导体材料，它具有更大的带隙（1.4电子伏特），因此在光电子器件中具有广泛的应用。

最后，我们来看一下35族半导体在实际应用中的一些例子。

由于其较小的带隙和较高的导电性能，35族半导体被广泛应用于太阳能电池、激光器、光纤通信系统、微波电路、高功率半导体器件等领域。

例如，砷化镓可以用于制造高效的太阳能电池和高功率激光器，而锑化铟（InSb）可以用于制造红外探测器和热成像设备。