MRF8S19140HR3;MRF8S19140HSR3;中文规格书,Datasheet资料

RF Power Field Effect TransistorsN--Channel Enhancement--Mode Lateral MOSFETsDesigned for CDMA,W--CDMA and LTE base station applications with frequencies from 1930to 1990MHz.Can be used in Class AB and Class C for all typical cellular base station modulation formats.•Typical Single--Carrier W--CDMA Performance:V DD =28Volts,I DQ =1100mA,P out =34Watts Avg.,IQ Magnitude Clipping,ChannelBandwidth =3.84MHz,Input Signal PAR =7.5dB @0.01%Probability on CCDF.Frequency G ps (dB)ηD (%)Output PAR(dB)ACPR (dBc)1930MHz 18.831.7 6.4--38.51960MHz 19.131.4 6.5--38.81990MHz19.331.56.5--38.8•Capable of Handling 10:1VSWR,@32Vdc,1960MHz,191Watts CW Output Power (3dB Input Overdrive from Rated P out )•Typical P out @1dB Compression Point ≃138Watts CW Features•100%PAR Tested for Guaranteed Output Power Capability•Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters •Internally Matched for Ease of Use •Integrated ESD Protection•Greater Negative Gate--Source Voltage Range for Improved Class C Operation•Designed for Digital Predistortion Error Correction Systems •Optimized for Doherty Applications •RoHS Compliant•In Tape and Reel.R3Suffix =250Units per 56mm,13inch Reel.Table 1.Maximum RatingsRatingSymbol Value Unit Drain--Source Voltage V DSS --0.5,+65Vdc Gate--Source Voltage V GS --6.0,+10Vdc Operating VoltageV DD 32,+0Vdc Storage Temperature Range T stg --65to +150°C Case Operating Temperature T C 150°C Operating Junction Temperature (1,2)T J225°CTable 2.Thermal CharacteristicsCharacteristicSymbol Value (2,3)Unit Thermal Resistance,Junction to CaseCase Temperature 75°C,34W CW,28Vdc,I DQ =1100mA,1960MHz Case Temperature 80°C,140W CW,28Vdc,I DQ =1100mA,1960MHzR θJC0.480.45°C/W1.Continuous use at maximum temperature will affect MTTF.2.MTTF calculator available at /rf.Select Software &Tools/Development Tools/Calculators to access MTTF calculators by product.3.Refer to AN1955,Thermal Measurement Methodology of RF Power Amplifiers.Go to /rf.Select Documentation/Application Notes --AN1955.Document Number:MRF8S19140HRev.0,5/2010Technical Data1930--1990MHz,34W AVG.,28V CDMA,W--CDMA,LTELATERAL N--CHANNELRF POWER MOSFETsMRF8S19140HR3MRF8S19140HSR3MRF8S19140HR3MRF8S19140HSR3Table 3.ESD Protection CharacteristicsTest MethodologyClass Human Body Model (per JESD22--A114)2(Minimum)Machine Model (per EIA/JESD22--A115)A (Minimum)Charge Device Model (per JESD22--C101)IV (Minimum)Table 4.Electrical Characteristics (T A =25°C unless otherwise noted)CharacteristicSymbolMinTypMaxUnitOff CharacteristicsZero Gate Voltage Drain Leakage Current (V DS =65Vdc,V GS =0Vdc)I DSS ——10μAdc Zero Gate Voltage Drain Leakage Current (V DS =28Vdc,V GS =0Vdc)I DSS ——1μAdc Gate--Source Leakage Current (V GS =5Vdc,V DS =0Vdc)I GSS——1μAdcOn CharacteristicsGate Threshold Voltage(V DS =10Vdc,I D =200μAdc)V GS(th) 1.0 1.8 2.5Vdc Gate Quiescent Voltage(V DD =28Vdc,I D =1100mAdc,Measured in Functional Test)V GS(Q) 1.9 2.6 3.4Vdc Drain--Source On--Voltage (V GS =10Vdc,I D =3Adc)V DS(on)0.10.240.3VdcFunctional Tests (1)(In Freescale Test Fixture,50ohm system)V DD =28Vdc,I DQ =1100mA,P out =34W Avg.,f =1960MHz,Single--Carrier W--CDMA,IQ Magnitude Clipping,Input Signal PAR =7.5dB @0.01%Probability on CCDF.ACPR measured in 3.84MHz Channel Bandwidth @±5MHz Offset.Power Gain G ps 18.019.121.0dB Drain EfficiencyηD 30.031.4—%Output Peak--to--Average Ratio @0.01%Probability on CCDF PAR 5.9 6.5—dB Adjacent Channel Power Ratio ACPR —--38.8--37.5dBc Input Return LossIRL—--24--7dBTypical Broadband Performance (In Freescale Test Fixture,50ohm system)V DD =28Vdc,I DQ =1100mA,P out =34W Avg.,Single--Carrier W--CDMA,IQ Magnitude Clipping,Input Signal PAR =7.5dB @0.01%Probability on CCDF.ACPR measured in 3.84MHz Channel Bandwidth @±5MHz Offset.Frequency G ps (dB)ηD (%)Output PAR(dB)ACPR (dBc)IRL (dB)1930MHz 18.831.7 6.4--38.5--241960MHz 19.131.4 6.5--38.8--241990MHz19.331.56.5--38.8--151.Part internally matched both on input and output.(continued)MRF8S19140HR3MRF8S19140HSR3Table 4.Electrical Characteristics (T A =25°C unless otherwise noted)(continued)CharacteristicSymbol Min Typ Max Unit Typical Performances (In Freescale Test Fixture,50ohm system)V DD =28Vdc,I DQ =1100mA,1930--1990MHz BandwidthP out @1dB Compression Point,CWP1dB —138—W IMD Symmetry @55W PEP ,P out where IMD Third Order Intermodulation 30dBc(Delta IMD Third Order Intermodulation between Upper and Lower Sidebands >2dB)IMD sym—15—MHzVBW Resonance Point(IMD Third Order Intermodulation Inflection Point)VBW res —68—MHz Gain Flatness in 60MHz Bandwidth @P out =34W Avg.G F —0.5—dB Gain Variation over Temperature (--30°C to +85°C)∆G —0.017—dB/°C Output Power Variation over Temperature (--30°C to +85°C)∆P1dB—0.010—dBm/°C*StackedFigure1.MRF8S19140HR3(HSR3)Test Circuit Component LayoutTable5.MRF8S19140HR3(HSR3)Test Circuit Component Designations and ValuesPart Description Part Number Manufacturer C1,C2,C3,C4,C5,C610pF Chip Capacitors ATC100B110JT500XT ATCC7,C8,C90.8pF Chip Capacitors ATC800B0R8BT500XT ATCC10,C1110μF,50V Chip Capacitors GRM55DR61H106KA88L MurataC12330μF,63V Electrolytic Capacitor MCRH63V337M13X21--RH MulticompC13 6.8μF,50V Chip Capacitor C4532X7R1H685KT TDKC1447μF,16V Tantalum Capacitor T491D476K016AT KemetC15,C17.01μF,100V Chip Capacitors C1825C103K1GACTU KemetC16,C18.56μF,50V Chip Capacitors C1825C564J5RACTU KemetR1 5.1Ω,1/8W Chip Resistor CRCW08055R10JNEA VishayR2 4.75Ω,1/4W Chip Resistor CRCW12064R75FNEA VishayPCB0.030″,εr=2.55AD255A ArlonMRF8S19140HR3MRF8S19140HSR3MRF8S19140HR3MRF8S19140HSR3TYPICAL CHARACTERISTICSI R L ,I N P U T R E T U R N L O S S (d B )--280--7--14--21182019.819.6--3936343230--34--35--36--37ηD,D R A I N E F F I C I E N C Y (%)G p s ,P O W E R G A I N (d B )19.419.21918.818.618.428--38--35P A R C (d B )--20--0.5--1--1.5--2.5A C P R (dB c )Figure 3.Intermodulation Distortion Productsversus Two--Tone SpacingTWO--TONE SPACING (MHz)10--60--10--20--30--501100I M D ,I N T E R M O D U L A T I O N D I S T O R T I O N (d B c )--40Figure 4.Output Peak--to--Average RatioCompression (PARC)versus Output Power1P out ,OUTPUT POWER (WATTS)--1--3--5400--2--4O U T P U T C O M P R E S S I O N A T 0.01%P R O B A B I L I T Y O N C C D F (d B )20608012021575145393327ηD ,D R A I N E F F I C I E N C Y (%)100A C P R (dB c )--50--20--25--30--40--35--4520G p s ,P O W E R G A I N (d B )191817161514MRF8S19140HR3MRF8S19140HSR3TYPICAL CHARACTERISTICS1P out ,OUTPUT POWER (WATTS)AVG.Figure 5.Single--Carrier W--CDMA Power Gain,DrainEfficiency and ACPR versus Output Power--10--20102206050403020ηD ,D R A I N E F F I C I E N C Y (%)G p s ,P O W E R G A I N (dB )20181010030010--60A C P R (dB c )1614120--30--40--50Figure 6.Broadband Frequency Response0241460f,FREQUENCY (MHz)161281585G A I N (d B )201710183519602085221023352460--30--5--10--15--20I R L (d B )4--25W--CDMA TEST SIGNAL0.00011000PEAK--TO--AVERAGE (dB)Figure DF W--CDMA IQ MagnitudeClipping,Single--Carrier Test Signal1010.10.010.0012468P R O B A B I L I T Y (%)10--60--10010(d B )--20--30--40--50--70--80--907.21.85.43.6--1.8--3.6--5.4--99f,FREQUENCY (MHz)Figure 8.Single--Carrier W--CDMA Spectrum--7.2--10013579MRF8S19140HR3MRF8S19140HSR3V DD =28Vdc,I DQ =1100mA ,P out =34W Avg.f MHz Z sourceΩZ load Ω1880 4.27--j3.42 1.62--j3.541900 4.33--j3.32 1.61--j3.451920 4.40--j3.22 1.61--j3.361940 4.47--j3.12 1.60--j3.271960 4.54--j3.02 1.60--j3.181980 4.61--j2.93 1.60--j3.092000 4.69--j2.84 1.59--j3.002020 4.73--j2.80 1.59--j2.9620404.63--j2.801.59--j2.96Z source =Test circuit impedance as measured fromgate to ground.Z load=Test circuit impedance as measured from drain to ground.Figure 9.Series Equivalent Source and Load ImpedanceZsourceZloadOutput Matching NetworkMRF8S19140HR3MRF8S19140HSR3ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS35P in ,INPUT POWER (dBm)V DD =28Vdc,I DQ =1100mA,Pulsed CW,10μsec(on)10%Duty Cycle54525036555347P o u t ,O U T P U T P O W E R (d B m )NOTE:Load Pull Test Fixture Tuned for Peak P1dB Output Power @28V51565834324031305749482933373839f (MHz)P1dB P3dB Watts dBm WattsdBm 193017052.320753.1196016552.220553.1199016652.220353.1Test Impedances per Compression Levelf (MHz)Z sourceΩZ load Ω1930P1dB 4.97--j5.89 1.28--j2.161960P1dB 7.33--j5.00 1.18--j2.041990P1dB8.82--j5.011.04--j2.68Figure 10.Pulsed CW Output Powerversus Input Power @28VMRF8S19140HR3MRF8S19140HSR3PACKAGEDIMENSIONSMRF8S19140HR3MRF8S19140HSR3分销商库存信息:FREESCALEMRF8S19140HR3MRF8S19140HSR3。