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TYN640RG;TYN840RG;中文规格书,Datasheet资料

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®1/6Table 1: Main FeaturesDESCRIPTIONThe TYNx40 series is suitable for applications where in-rush current conditions are critical, such as overvoltage crowbar protection circuits in power supplies, in-rush current limiting circuits,solid state relays (in back to back configuration),welding equipment, high power motor control circuits.Using clip assembly technology, they provide a superior performance in high surge current capabilites.Symbol Value Unit I T(RMS)40A V DRM /V RRM600 to 1000V I GT35mATYNx40 Series40A SCR SREV. 5February 2006STANDARDTable 2: Order CodesPart Numbers Marking TYN640RG TYN640TYN840RG TYN840TYN1040RGTYN1040Table 3: Absolute Ratings (limiting values)Symbol ParameterValue Unit I T(RMS) RMS on-state current (180° conduction angle)T c = 95°C 40A IT (AV) Average on-state current (180° conduction angle)T c = 95°C 25A I TSM Non repetitive surge peak on-state current t p = 8.3 ms T j = 25°C 480A t p = 10 ms 460I ²t I ²t Value for fusingt p = 10 msT j = 25°C 1060A 2S dI/dt Critical rate of rise of on-state current I G =2 x I GT , t r ≤ 100 ns F = 60 HzT j = 125°C 50A/µs I GM Peak gate currentt p = 20 µsT j = 125°C 4A P G(AV)Average gate power dissipation T j = 125°C1W T stg T j Storage junction temperature range Operating junction temperature range - 40 to + 150- 40 to + 125°C V RGMMaximum peak reverse gate voltage5VTYNx40 Series2/6Tables 4: Electrical Characteristics (T j = 25°C, unless otherwise specified)Table 5: Thermal resistance Symbol Test ConditionsValue Unit I GT V D = 12 V R L = 33 ΩMIN.3.5mA MAX.35V GT MAX. 1.3V V GD V D = V DRM R L = 3.3 k ΩT j = 125°CMIN.0.2V I H I T = 500 mA Gate open MAX.75mAI L I G = 1.2 x I GTMAX.150mA dV/dt V D = 67 % V DRM Gate open T j = 125°C MIN.1000V/µs V TM I TM = 80 A tp = 380 µs T j = 25°CMAX. 1.6V V t0Threshold voltage T j = 125°C MAX.0.85V R d Dynamic resistance T j = 125°C MAX.10m ΩI DRM I RRMV DRM = V RRMT j = 25°C MAX.5µA T j = 125°C 4mASymbol ParameterValue Unit R th(j-c)Junction to case (DC)0.8°C/W R th(j-a)Junction to ambient (DC)60°C/WFigure 1: Maximum average power dissipation versus average on-state currentFigure 2: Average and D.C. on-state current versus case temperatureTYNx40 Series3/6Figure 3: Relative variation of thermal impedance versus pulse durationFigure 4: Relative variation of gate trigger current, holding current and latching current versus junction temperatureFigure 5: Surge peak on-state current versusnumber of cyclesFigure 6: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp <10ms, and corresponding values of I²tFigure 7: On-state characteristics (maximum values)TYNx40 Series4/6Figure 8: Ordering Information SchemeTable 6: Product SelectorPart Numbers Voltage (xxx)Sensitivity Package 600 V 800 V 1000 V TYNx40XXX35 mATO-220ABTYNx40 Series5/6Figure 9: TO-220AB Package Mechanical DataIn order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: .Table 7: Ordering InformationOrdering type Marking PackageWeightBase qtyDelivery modeTYN640RG TYN640TO-220AB2.3 g50TubeTYN840RG TYN840TYN1040RGTYN1040Table 8: Revision HistoryDate Revision Description of ChangesApr-20024A Last update.13-Feb-20065TO-220AB delivery mode changed from bulk to tube.ECOPACK statement added.TYNx40 SeriesInformation furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.The ST logo is a registered trademark of STMicroelectronics.All other names are the property of their respective owners© 2006 STMicroelectronics - All rights reservedSTMicroelectronics group of companiesAustralia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America6/6分销商库存信息:STMTYN640RG TYN840RG。

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IRFI640中文资料

IRFI640中文资料


©2001 Fairchild Semiconductor Corporation
Rev. B, November 2001
元器件交易网
IRFW640B / IRFI640B
Typical Characteristics
ID, Drain Current [A]
DS(ON) R [Ω ], Drain-Source On-Resistance
Off Characteristics
BVDSS ∆BVDSS / ∆TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
VGS = 0 V, ID = 250 µA
200 --
ID = 250 µA, Referenced to 25°C -- 0.2
Features
• 18A, 200V, RDS(on) = 0.18Ω @VGS = 10 V • Low gate charge ( typical 45 nC) • Low Crss ( typical 45 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability
Figure 1. On-Region Characteristics
1.0
0.8
V = 10V
GS
0.6
V = 20V GS
0.4
0.2
※ Note : T = 25℃ J
0.0
0
10
20
30
40
50
60
ID, Drain Current [A]
IXGT20N60BD1;中文规格书,Datasheet资料

IXGT20N60BD1;中文规格书,Datasheet资料

G = Gate, C = Collector,E = Emitter,TAB = CollectorSymbol Test Conditions Maximum RatingsV CES T J = 25°C to 150°C600V V CGR T J = 25°C to 150°C; R GE = 1 M W 600V V GES Continuous ±20V V GEM Transient ±30V I C25T C = 25°C 40A I C90T C = 90°C 20A I CMT C = 25°C, 1 ms80A SSOA V GE = 15 V, T VJ = 125°C, R G = 22 W I CM = 40A (RBSOA)Clamped inductive load, L = 100 m H @ 0.8 V CESP C T C = 25°C150W T J -55 ... +150°C T JM 150°C T stg -55 ... +150°CMdMounting torque (M3) TO-247AD 1.13/10Nm/lb.in.Maximum lead temperature for soldering 300°C 1.6 mm (0.062 in.) from case for 10 sWeightTO-247AD 6g TO-2684gSymbol Test ConditionsCharacteristic Values(T J = 25°C, unless otherwise specified)min.typ.max.BV CES I C = 250 m A, V GE = 0 V 600V V GE(th)I C= 250 m A, V CE = V GE2.55.5V I CES V CE = 0.8 • V CES T J = 25°C 200m A V GE = 0 VT J = 150°C3mA I GES V CE = 0 V, V GE = ±20 V ±100nA V CE(sat)I C= I C90, V GE = 15 V1.72.0VHiPerFAST TM IGBT V CES = 600 V with DiodeI C25= 40 A V CE(sat)typ = 1.7 V t fi(typ)= 100 ns98566A (3/99)IXGH 20N60BD1IXGT 20N60BD1C (TAB)TO-247 AD (IXGH)TO-268(IXGT)GEC (TAB)Features•International standard packages•High frequency IGBT and antiparallel FRED in one package•High current handling capability •HiPerFAST TM HDMOS TM process •MOS Gate turn-on -drive simplicity Applications•Uninterruptible power supplies (UPS)•Switched-mode and resonant-mode power supplies•AC motor speed control •DC servo and robot drives •DC choppers Advantages•Space savings (two devices in one package)•High power density•Suitable for surface mounting•Very low switching losses for high frequency applications•Easy to mount with 1 screw,TO-247(insulated mounting screw hole)Preliminary dataIXYS reserves the right to change limits, test conditions, and dimensions.Symbol Test Conditions Characteristic Values(T= 25°C, unless otherwise specified)limeter InchesMin.Max.Min.Max.A19.8120.320.7800.800B20.8021.460.8190.845C15.7516.260.6100.640D 3.55 3.650.1400.144E 4.32 5.490.1700.216F 5.4 6.20.2120.244G 1.65 2.130.0650.084H- 4.5-0.177J 1.0 1.40.0400.055K10.811.00.4260.433L 4.7 5.30.1850.209M0.40.80.0160.031N 1.5 2.490.0870.102 TO-268AA (D3 PAK)limeter InchesMin.Max.Min.Max.A 4.9 5.1.193.201A12.7 2.9.106.114A2.02.25.001.010b 1.15 1.45.045.057b21.92.1.75.83C.4.65.016.026D13.8014.00.543.551E15.8516.05.624.632E113.313.6.524.535e 5.45 BSC .215 BSCH18.7019.10.736.752L 2.40 2.70.094.106L1 1.20 1.40.047.055L2 1.00 1.15.039.045L3 0.25 BSC .010 BSCL4 3.80 4.10.150.161分销商库存信息: IXYSIXGT20N60BD1。

DMN6040SVT-7;中文规格书,Datasheet资料

DMN6040SVT-7;中文规格书,Datasheet资料

Month Code
2010 X
Jan
Feb
1
2
2011 Y
Mar 3
2012 Z
Apr
May
4
5
2013 A
Jun
Jul
6
7
2014 B
Aug
Sep
8
9
2015 C
Oct O
2016 D
Nov
Dec
N
D
DMN6040SVT
http://onDeocicum.ceonmt n/umber: DS35562 Rev. 10 - 2
5.0A 4.3A
Description and Applications
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
5.4 4.3 2.1 30 14.2 10
Units V V A
A
A
A A A A mJ
Thermal Characteristics @TA = 25°C unless otherwise specified
Total Power Dissipation (Note 4)
Characteristic
Characteristic
Continuous Drain Current (Note 5) VGS = 10V
IRMT6400资料

IRMT6400资料


Table 4. Receiver DC Electrical Characteristics
Symbol VOL IOL VOH IOH RL CL Parameter RxD Output Low Voltage Static Sink Current on RxD RxD Output High Voltage Static Source Current on RxD RxD Rosistive Load RxD Capacitive Load 2.2 50 Vcc-0.5 2.4 Min Typical Max 0.5 2.4 Unit V mA V mA kΩ pF
TxD
Input
Active High Active High
SD/ Mode Input
VCC
GND NC LEDA LEDC
Positive Supply Ground (Power) No Connect Input Output
-
Figure 1. Block Diagram
VCC
Figure 2. Minimum Vishay Low-Power Integrated Infrared Transceiver Circuit Diagram
Document Number: 82579 Revision 05-July-02

1
元器件交易网
Table 1. Input/Output Functional Description
Symbol RxD I/O Type Output Polarity Active Low Function This output indicates received serial data. It is a push-pull CMOS driver capable of driving a standard CMOS or TTL load. No external pull-up or pull-down resistor is required. This output may switch indeterminately when the module is transmitting. This output pin is in tri-state mode when the module is in shutdown mode and during digital serial programming operations. RxD is high at initializaton. This CMOS input is used to transmit serial data when SD/ Mode is low. An on-chip protection circuit disables the LED driver if the TxDpin is asserted for longer than 60 µs. When used in conjunction with the SD/ Mode pin. TxD is low at initializaton. Assertion of this pin high for a period of time exceeding 400 µs places the module into shutdown mode. On the falling edge of this signal, the state of the TxDpin is sampled and used to set receiver low bandwidth (TxD= Low) or high bandwidth (TxD= High) mode. See Figures 7 and 8 for timings. SD is low at initializaton Connect to positive power supply (2.7 V to 5.25 V). Placement of a 1.0 µF to 10.0 µF decoupling ceramic capacitor as close as possible to the V CC pin is recommended. Connect to power supply ground. A solid ground plane is recommended. This pin could be connected to ground. This pin can be connected directly to VCC. No series resistor is required. LED cathode. Leave this pin unconnected. This pin may be monitored to determine the state of the LED.