MRF6VP2600HR5;MRF6VP2600HR6;中文规格书,Datasheet资料

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RF Power Field Effect TransistorN--Channel Enhancement--Mode Lateral MOSFETDesigned primarily for wideband applications with frequencies up to 500MHz.Device is unmatched and is suitable for use in broadcast applications.•Typical DVB--T OFDM Performance:V DD =50Volts,I DQ =2600mA,P out =125Watts Avg.,f =225MHz,Channel Bandwidth =7.61MHz,Input Signal PAR =9.3dB @0.01%Probability on CCDF.Power Gain —25dB Drain Efficiency —28.5%ACPR @4MHz Offset —--61dBc @4kHz Bandwidth •Typical Pulsed Performance:V DD =50Volts,I DQ =2600mA,P out =600Watts Peak,f =225MHz,Pulse Width =100μsec,Duty Cycle =20%Power Gain —25.3dB Drain Efficiency —59%•Capable of Handling 10:1VSWR,@50Vdc,225MHz,600Watts Peak Power,Pulse Width =100μsec,Duty Cycle =20%Features•Characterized with Series Equivalent Large--Signal Impedance Parameters •CW Operation Capability with Adequate Cooling •Qualified Up to a Maximum of 50V DD Operation •Integrated ESD Protection•Designed for Push--Pull Operation•Greater Negative Gate--Source Voltage Range for Improved Class C Operation•RoHS Compliant•In Tape and Reel.R6Suffix =150Units per 56mm,13inch Reel.Table 1.Maximum RatingsRatingSymbol Value Unit Drain--Source Voltage V DSS --0.5,+110Vdc Gate--Source Voltage V GS --6.0,+10Vdc Storage Temperature Range T stg --65to +150°C Case Operating Temperature T C 150°C Operating Junction Temperature (1,2)T J225°CTable 2.Thermal CharacteristicsCharacteristicSymbol Value (2,3)Unit Thermal Resistance,Junction to CaseCase Temperature 99°C,125W CW,225MHz,50Vdc,I DQ =2600mA Case Temperature 64°C,610W CW,352.2MHz,50Vdc,I DQ =150mA Case Temperature 81°C,610W CW,88--108MHz,50Vdc,I DQ =150mAR θJC0.200.140.16°C/W1.Continuous use at maximum temperature will affect MTTF.2.MTTF calculator available at /rf.Select Software &Tools/Development Tools/Calculators to access MTTF calculators by product.3.Refer to AN1955,Thermal Measurement Methodology of RF Power Amplifiers.Go to /rf.Document Number:MRF6VP2600HRev.5.1,7/2010Freescale Semiconductor Technical DataMRF6VP2600HR62--500MHz,600W,50V LATERAL N--CHANNELBROADBAND RF POWER MOSFETMRF6VP2600HR6Table 3.ESD Protection CharacteristicsTest MethodologyClass Human Body Model (per JESD22--A114)2(Minimum)Machine Model (per EIA/JESD22--A115)A (Minimum)Charge Device Model (per JESD22--C101)IV (Minimum)Table 4.Electrical Characteristics (T A =25°C unless otherwise noted)CharacteristicSymbolMinTypMaxUnitOff Characteristics (1)Gate--Source Leakage Current (V GS =5Vdc,V DS =0Vdc)I GSS ——10μAdc Drain--Source Breakdown Voltage (I D =150mA,V GS =0Vdc)V (BR)DSS 110——Vdc Zero Gate Voltage Drain Leakage Current (V DS =50Vdc,V GS =0Vdc)I DSS ——50μAdc Zero Gate Voltage Drain Leakage Current (V DS =100Vdc,V GS =0Vdc)I DSS——2.5mAOn CharacteristicsGate Threshold Voltage (1)(V DS =10Vdc,I D =800μAdc)V GS(th)1 1.653Vdc Gate Quiescent Voltage (2)(V DD =50Vdc,I D =2600mAdc,Measured in Functional Test)V GS(Q) 1.5 2.7 3.5Vdc Drain--Source On--Voltage (1)(V GS =10Vdc,I D =2Adc)V DS(on)—0.25—VdcDynamic Characteristics (1)Reverse Transfer Capacitance(V DS =50Vdc ±30mV(rms)ac @1MHz,V GS =0Vdc)C rss — 1.7—pF Output Capacitance(V DS =50Vdc ±30mV(rms)ac @1MHz,V GS =0Vdc)C oss —101—pF Input Capacitance(V DS =50Vdc,V GS =0Vdc ±30mV(rms)ac @1MHz)C iss—287—pFFunctional Tests (2)(In Freescale Test Fixture,50ohm system)V DD =50Vdc,I DQ =2600mA,P out =125W Avg.,f =225MHz,DVB--T OFDM Single Channel.ACPR measured in 7.61MHz Channel Bandwidth @±4MHz Offset.Power Gain G ps 242527dB Drain EfficiencyηD 2728.5—%Adjacent Channel Power Ratio ACPR —--61--59dBc Input Return Loss IRL —--18--9dB Typical Performance —352.2MHz (In Freescale 352.2MHz Test Fixture,50ohm system)V DD =50Vdc,I DQ =150mA,P out =600W CWPower Gain G ps —22—dB Drain Efficiency ηD —68—%Input Return LossIRL—--15—dBTypical Performance —88--108MHz (In Freescale 88--108MHz Test Fixture,50ohm system)V DD =50Vdc,I DQ =150mA,P out =600WCWPower Gain G ps —24.5—dB Drain Efficiency ηD —74—%Input Return LossIRL—--5—dB1.Each side of device measured separately.2.Measurement made with device in push--pull configuration.MRF6VP2600HR6Figure 2.MRF6VP2600HR6Test Circuit SchematicZ13,Z140.224″x 0.253″Microstrip Z15*,Z16*0.095″x 0.253″Microstrip Z17,Z180.052″x 0.253″Microstrip Z190.053″x 0.080″Microstrip Z20 1.062″x 0.080″MicrostripPCBArlon CuClad 250GX--0300--55--22,0.030″,εr =2.55*Line length includes microstrip bendsZ1 1.049″x 0.080″Microstrip Z2*0.143″x 0.080″Microstrip Z3*0.188″x 0.080″Microstrip Z40.192″x 0.133″Microstrip Z5,Z60.418″x 0.193″Microstrip Z7,Z80.217″x 0.518″Microstrip Z9,Z100.200″x 0.518″Microstrip Z11,Z120.375″x 0.214″MicrostripTable 5.MRF6VP2600HR6Test Circuit Component Designations and ValuesPartDescriptionPart NumberManufacturer B195Ω,100MHz Long Ferrite Bead 2743021447Fair--Rite C147pF Chip Capacitor ATC100B470JT500XT ATC C2,C443pF Chip Capacitors ATC100B430JT500XT ATC C3100pF Chip Capacitor ATC100B101JT500XT ATC C510pF Chip Capacitor ATC100B7R5CT500XT ATC C6,C9 2.2μF,50V Chip Capacitors C1825C225J5RAC Kemet C7,C13,C2010K pF Chip Capacitors ATC200B103KT50XT ATC C8220nF,50V Chip Capacitor C1812C224J5RAC Kemet C10,C17,C181000pF Chip Capacitors ATC100B102JT50XT ATC C11,C220.1μF,50V Chip Capacitors CDR33BX104AKYS Kemet C12,C2120K pF Chip Capacitors ATC200B203KT50XT ATC C1410μF,35V Tantalum Capacitor T491D106K035AT Kemet C1522μF,35V Tantalum Capacitor T491X226K035AT Kemet C1647μF,50V Electrolytic Capacitor 476KXM050M Illinois Cap C192.2μF,Chip Capacitor2225X7R225KT3AB ATC C23,C24,C25470μF 63V Electrolytic Capacitors MCGPR63V477M13X26--RH MulticompJ1,J2Jumpers from PCB to T1&T2Copper Foil L117.5nH,6Turn InductorB06T CoilCraftL28Turn,#20AWG ID =0.125″Inductor,Hand Wound Copper Wire L382nH,Inductor1812SMS--82NJ CoilCraft L4*9Turn,#18AWG Inductor,Hand Wound Copper Wire R120Ω,3W Axial Leaded Resistor 5093NW20R00J VishayT1Balun TUI--9Comm Concepts T2BalunTUO--4Comm Concepts *L4is wrapped around R1.MRF6VP2600HR6Figure3.MRF6VP2600HR6Test Circuit Component Layout*L4is wrapped around R1.MRF6VP2600HR6TYPICAL CHARACTERISTICS50110002010V DS ,DRAIN--SOURCE VOLTAGE (VOLTS)Figure 4.Capacitance versus Drain--Source VoltageC ,C A P A C I T A N C E (p F )301001040110011010V DS ,DRAIN--SOURCE VOLTAGE (VOLTS)Figure 5.DC Safe Operating AreaI D ,D R A I N C U R R E N T (A M P S )100G p s ,P O W E R G A I N (d B )212602524P out ,OUTPUT POWER (WATTS)PULSEDFigure 8.Pulsed Power Gain versusOutput Power G p s ,P O W E R G A I N (d B )10023600700Figure 9.Pulsed Power Gain and Drain Efficiencyversus Output PowerP out ,OUTPUT POWER (WATTS)PULSED10100100022200300400500D ,Note:Each side of device measured separately.Note:Each side of device measured separately.MRF6VP2600HR6TYPICAL CHARACTERISTICS —TWO--TONEFigure 10.Intermodulation Distortion Products versus Output Power--70--2010P out ,OUTPUT POWER (WATTS)PEP--30--40--50100700I M D ,I N T E R M O D U L A T I O N D I S T O R T I O N (d B c )--605Figure 11.Intermodulation Distortion Products versus Tone Spacing10--100.1TWO--TONE SPACING (MHz)--30--40--50140I M D ,I N T E R M O D U L A T I O N D I S T O R T I O N (d B c )Figure 12.Two--Tone Power Gain versus Output Power 23.52620P out ,OUTPUT POWER (WATTS)PEP25.524100700G p s ,P O W E R G A I N (d B )2524.5Figure 13.Third Order IntermodulationDistortion versus Output PowerP out ,OUTPUT POWER (WATTS)PEP100--25--30--40--45--50I N T E R M O D U L A T I O N D I S T O R T I O N (d B c )I M D ,T H I R D O R D E R --2070020--60--20--35MRF6VP2600HR6TYPICAL CHARACTERISTICS —OFDMP R O B A B I L I T Y (%)25.825.6G p s ,P O W E R G A I N (d B )25.425.22524.824.424.224.6Figure 18.Single--Carrier DVB--T OFDM ACPR PowerGain and Drain Efficiency versus Output PowerP out ,OUTPUT POWER (WATTS)AVG.30ηD 400100MRF6VP2600HR6TYPICAL CHARACTERISTICS250 10990T J,JUNCTION TEMPERATURE(°C)Figure19.MTTF versus Junction Temperature--CW This above graph displays calculated MTTF in hours when the deviceis operated at V DD=50Vdc,P out=125W Avg.,andηD=28.5%.MTTF calculator available at /rf.SelectSoftware&Tools/Development Tools/Calculators to access MTTFcalculators by product.107106105110130150170190MTTF(HOURS)210230 108MRF6VP2600HR6Z o =10ΩZ loadZ sourcef =225MHzf =225MHzV DD =50Vdc,I DQ =2600mA,P out =125W Avg.f MHz Z sourceΩZ load Ω2251.42+j8.094.45+j1.16Z source =Test circuit impedance as measured fromgate to gate,balancedconfiguration.Z load=Test circuit impedance as measured from drain to drain,balanced configuration.Figure 20.Series Equivalent Source and Load ImpedanceZ sourceZloadOutput Matching NetworkMRF6VP2600HR6Figure 21.MRF6VP2600HR6Test Circuit Component Layout —88--108MHzTable 6.MRF6VP2600HR6Test Circuit Component Designations and Values —88--108MHzPartDescriptionPart NumberManufacturer B195Ω,100MHz Long Ferrite Bead 2743021447Fair--Rite C1 6.8μF,50V Chip Capacitor C4532X7R1H685K TDK C230pF Chip Capacitor ATC100B300JT500XT ATC C3,C13,C141000pF Chip Capacitors ATC100B102JT50XT ATC C4,C5,C61μF,100V Chip Capacitors GRM31CR72A105KA01L Murata C7,C8,C9,C10,C11,C123900pF Chip Capacitors ATC700B392JT50X ATC C15 4.7μF,100V Chip Capacitor GRM55ER72A475KA01B Murata C16,C17470μF,63V Electrolytic Capacitors MCGPR63V477M13X26--RH Multicomp C18220μF,100V Electrolytic Capacitor MCGPR100V227M16X26--RHMulticompJ1Jumper with Copper Tape L182nH Inductor1812SMS--82NJ CoilCraft L28Turn,#14AWG ID=0.250″Inductor,Hand Wound Copper Wire Freescale L3,L48nH InductorsA03TKLCCoilCraft R115Ω,1/4W Chip Resistor CRCW120615R0FKEA VishayT1Balun TransformerTUI--LF--9Comm Concepts Coax1,Coax225Ω,Semi Rigid RF Cable,3mm Line,16cm Length UT--141C--25Micro--Coax Coax325Ω,Semi Rigid RF Cable,3mm Line,15cm Length UT--141C--25Micro--Coax PCB0.030″,εr =2.55GX0300--55--22Arlon分销商库存信息:FREESCALEMRF6VP2600HR5MRF6VP2600HR6。