• 从技术上讲,应实现高性能——高线性度、低噪声、 高增益和高效率。
• 从工艺实现上讲,可采用的有
CMOS,BiCMOS,GaAsFET,HBT and PHEMT
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第三代移动通信终端RFIC:
• Handsets of the 3G era will integrate many of the RF functions
• GaAlAs/GaAs HBTs. linear output power HBT, low noise HBT for LNA , low 1/f (flicker) noise HBT for oscillators
• Highly linear power amplifier for base station. Feedforward technique , Feedback Predistortion technique (POSTECH Patent) and Low Frequency 2nd Order Intermodulation Feed-forwarding (POSTECH Patent).
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RFIC发展趋势
• 高度集.04.2020
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RFIC发展策略建议
• 从RFIC芯片的发展历程来看,美国花费了近20年,现在几乎垄断 了全世界的市场。而韩国花费了近10年的周期,搞出了具有自主 知识产权的RFIC芯片。为缩短我国的开发历程,建议:
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• A single-chip RF subsystem should be available in the next few years.