Rapid Generation of Thermal-Safe Test Schedules
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Eaton 198529Eaton Moeller® series Rapid Link - Reversing starter, 6.6 A, Sensor input 2, AS-Interface®, S-7.4 for 31 modules, HAN Q5General specificationsEaton Moeller® series Rapid Link Reversing starter198529RAMO5-W200A31-5120S14015081964048120 mm 270 mm 220 mm 1.63 kgCE CCC RoHSIEC/EN 60947-4-2 UL 60947-4-2 UL approvalAssigned motor rating: for normal internally and externally ventilated 4 pole, three-phase asynchronous motors with 1500 rpm at 50 Hz or 1800 min at 60 HzProduct NameCatalog Number Model CodeEANProduct Length/Depth Product Height Product Width Product Weight Certifications Catalog NotesIs the panel builder's responsibility. The specifications for the switchgear must be observed.3 kW6.6 A (at 150 % Overload)400 V AC, 3-phase480 V AC, 3-phase65000 A0 VMeets the product standard's requirements.Is the panel builder's responsibility. The specifications for the switchgear must be observed.Does not apply, since the entire switchgear needs to be evaluated.0 kW2.238 kWMeets the product standard's requirements.0 V-40 °CThermistor monitoring PTCKey switch position OFF/RESETKey switch position AUTOElectronic motor protection Electromagnetic compatibility (EMC)Generation Change RA-SP to RASP5Connecting drives to generator suppliesConfiguration to Rockwell PLC for Rapid LinkGeneration change from RA-SP to RASP 4.0Generation change RAMO4 to RAMO5Generation change from RA-MO to RAMO 4.0Generation Change RASP4 to RASP5Rapid Link 5 - brochureDA-SW-drivesConnect - InstallationshilfeDA-SW-USB Driver DX-COM-STICK3-KITDA-SW-drivesConnect - installation helpDA-SW-Driver DX-CBL-PC-3M0DA-SW-drivesConnect USB Driver DX-COM-PCKITDA-SW-drivesConnectDA-SW-USB Driver PC Cable DX-CBL-PC-1M5Material handling applications - airports, warehouses and intra-logisticsProduct Range Catalog Drives EngineeringProduct Range Catalog Drives Engineering-ENDA-DC-00004525.pdfDA-DC-00004184.pdfDA-DC-00004523.pdfDA-DC-00003964.pdfeaton-bus-adapter-rapidlink-reversing-starter-dimensions-002.eps eaton-bus-adapter-rapidlink-speed-controller-dimensions-002.eps eaton-bus-adapter-rapidlink-speed-controller-dimensions-003.eps eaton-bus-adapter-rapidlink-reversing-starter-dimensions.epsETN.RAMO5-W200A31-5120S1.edzIL034084ZU10.11 Short-circuit ratingRated operational power at AC-3, 380/400 V, 50 HzInput currentRated operational voltageRated conditional short-circuit current, type 1, 480 Y/277 V Rated control supply voltage (Us) at AC, 50 Hz - min10.4 Clearances and creepage distances10.12 Electromagnetic compatibility10.2.5 LiftingRated power at 575 V, 60 Hz, 3-phaseRated power at 460 V, 60 Hz, 3-phase10.2.3.1 Verification of thermal stability of enclosures Rated control supply voltage (Us) at DC - minAmbient storage temperature - minFitted with:Application notes BrochuresCatalogs Certification reports DrawingseCAD model Installation instructionsKey switch position HANDThermo-clickTwo sensor inputs through M12 sockets (max. 150 mA) for quick stop and interlocked manual operationShort-circuit releaseAC-53a0 VAC voltageCenter-point earthed star network (TN-S network)Phase-earthed AC supply systems are not permitted.Is the panel builder's responsibility.Class 10 A10 kA55 °C0 kW< 95 %, no condensationIn accordance with IEC/EN 50178Parameterization: FieldbusParameterization: KeypadDiagnostics and reset on device and via AS-Interface Parameterization: drivesConnectParameterization: drivesConnect mobile (App)10,000,000 Operations (at AC-3)2Rapid Link 5MN034004EN MN040003_ENramo5_v6.dwg ramo5_v6.stpOverload cycleNumber of pilot lightsRated control supply voltage (Us) at AC, 50 Hz - max System configuration type10.8 Connections for external conductorsCoordination class (IEC 60947-4-3)Rated conditional short-circuit current, type 1, 600 Y/347 V Rated conditional short-circuit current (Iq)Ambient operating temperature - maxRated operational power at AC-3, 220/230 V, 50 Hz Climatic proofingFeaturesLifespan, electricalNumber of command positions Installation videos Manuals and user guides mCAD modelElectrical connection type of main circuitPlug-in connectionElectrical connection type for auxiliary- and control-current circuit Plug-in connectionRated control supply voltage (Us) at DC - max0 V10.9.3 Impulse withstand voltageIs the panel builder's responsibility.Ambient operating temperature - min-10 °C10.6 Incorporation of switching devices and componentsDoes not apply, since the entire switchgear needs to be evaluated.Current limitationAdjustable, motor, main circuit0.3 - 6.6 A, motor, main circuitCable length10 m, Radio interference level, maximum motor cable length10.5 Protection against electric shockDoes not apply, since the entire switchgear needs to be evaluated.Mounting positionVerticalMains switch-on frequencyMaximum of one time every 60 secondsClassCLASS 10 A10.13 Mechanical functionThe device meets the requirements, provided the information in the instruction leaflet (IL) is observed.10.2.6 Mechanical impactDoes not apply, since the entire switchgear needs to be evaluated.10.9.4 Testing of enclosures made of insulating materialIs the panel builder's responsibility.10.3 Degree of protection of assembliesDoes not apply, since the entire switchgear needs to be evaluated.Electromagnetic compatibilityClass AVoltage typeDCProduct categoryMotor starterOverload release current setting - min0.3 ARated control voltage (Uc)24 V DC (-15 %/+20 %, external via AS-Interface® plug)Rated operational current (Ie)6.6 AAssigned motor power at 460/480 V, 60 Hz, 3-phase3 HPRated frequency - min47 HzNumber of auxiliary contacts (normally closed contacts)Rated conditional short-circuit current (Iq), type 2, 380 V, 400 V, 415 V0 APower consumption8 W10.2.3.2 Verification of resistance of insulating materials to normal heatMeets the product standard's requirements.10.2.3.3 Resist. of insul. mat. to abnormal heat/fire by internal elect. effectsMeets the product standard's requirements.On-delay20 - 35 msLifespan, mechanical10,000,000 Operations (at AC-3)Rated operational current (Ie) at 150% overload6.6 AProtocolASIAS-Interface profile cable: S-7.4 for 31 modulesOverload release current setting - max6.6 A10.9.2 Power-frequency electric strengthIs the panel builder's responsibility.Overvoltage categoryIIIDegree of protectionIP65NEMA 12Rated frequency - max63 HzVibrationResistance: 57 Hz, Amplitude transition frequency on accelerationResistance: 10 - 150 Hz, Oscillation frequency Resistance: According to IEC/EN 60068-2-6Resistance: 6 Hz, Amplitude 0.15 mmRated operational power at 380/400 V, 50 Hz - max3 kWAmbient storage temperature - max70 °CShort-circuit protection (external output circuits)Type 1 coordination via the power bus' feeder unit, Main circuitRated control supply voltage (Us) at AC, 60 Hz - min0 V10.7 Internal electrical circuits and connectionsIs the panel builder's responsibility.Rated impulse withstand voltage (Uimp)4000 VConnectionConnections pluggable in power sectionOff-delay20 - 35 ms10.10 Temperature riseThe panel builder is responsible for the temperature rise calculation. Eaton will provide heat dissipation data for the devices.FunctionsTemperature compensated overload protectionExternal reset possibleOutput frequency50/60 HzMains voltage tolerance380 - 480 V (-15 %/+10 %, at 50/60 Hz)Rated conditional short-circuit current (Iq), type 2, 230 V0 AInterfacesSpecification: S-7.4 (AS-Interface®)Max. total power consumption from AS-Interface® power supply unit (30 V): 190 mANumber of slave addresses: 31 (AS-Interface®)TypeReversing starter10.2.2 Corrosion resistanceMeets the product standard's requirements.Supply frequency50/60 Hz, fLN, Main circuit10.2.4 Resistance to ultra-violet (UV) radiationMeets the product standard's requirements.10.2.7 InscriptionsMeets the product standard's requirements.Rated control supply voltage (Us) at AC, 60 Hz - max0 VRated operational current (Ie) at AC-3, 380 V, 400 V, 415 V6.6 ARated operational power at 380/400 V, 50 Hz - min0.09 kWModelReversing starterNumber of auxiliary contacts (normally open contacts)Shock resistance15 g, Mechanical, According to IEC/EN 60068-2-27, 11 ms, Half-sinusoidal shock 11 ms, 1000 shocks per shaftAltitudeMax. 1000 mAbove 1000 m with 1 % performance reduction per 100 m Max. 2000 mEaton Corporation plc Eaton House30 Pembroke Road Dublin 4, Ireland © 2023 Eaton. All Rights Reserved. Eaton is a registered trademark.All other trademarks areproperty of their respectiveowners./socialmedia。
Eaton 198752Eaton Moeller® series Rapid Link - Speed controllers, 2.4 A, 0.75 kW, Sensor input 4, AS-Interface®, S-7.4 for 31 modules, HAN Q4/2, with manual override switch, STO (Safe Torque Off)Eaton Moeller® series Rapid Link Speed controller198752RASP5-2400A31-412R010S14015081968107157 mm 270 mm 220 mm 3.59 kgUL 61800-5-1 IEC/EN 61800-5-1 UL approval CE RoHSProduct NameCatalog NumberModel CodeEANProduct Length/Depth Product Height Product Width Product Weight Certifications Catalog Notes 3 fixed speeds and 1 potentiometer speedcan be switched over from U/f to (vector) speed control Connection of supply voltage via adapterDiagnostics and reset on device and via AS-Interface Parameterization: FieldbusParameterization: KeypadParameterization: drivesConnectParameterization: drivesConnect mobile (App)Control unitTwo sensor inputs through M12 sockets (max. 150 mA) for quick stop and interlocked manual operationKey switch position HANDInternal DC linkIGBT inverterKey switch position AUTOPTC thermistor monitoringSelector switch (Positions: REV - OFF - FWD)PC connectionKey switch position OFF/RESETThermo-click with safe isolationManual override switchSTO (Safe Torque Off)3 fixed speeds1 potentiometer speed IP65NEMA 121st and 2nd environments (according to EN 61800-3)IIISpeed controllerASIAS-Interface profile cable: S-7.4 for 31 modulesC2, C3: depending on the motor cable length, the connected load, and ambient conditions. External radio interference suppression filters (optional) may be necessary.C1: for conducted emissions only2000 VAC voltageCenter-point earthed star network (TN-S network)Phase-earthed AC supply systems are not permitted.Vertical15 g, Mechanical, According to IEC/EN 60068-2-27, 11 ms, Half-sinusoidal shock 11 ms, 1000 shocks per shaftResistance: 10 - 150 Hz, Oscillation frequencyResistance: 57 Hz, Amplitude transition frequency on accelerationResistance: 6 Hz, Amplitude 0.15 mmResistance: According to IEC/EN 60068-2-6Max. 2000 mAbove 1000 m with 1 % performance reduction per 100 m -10 °C40 °C-40 °C70 °CFeatures Fitted with:Functions Degree of protectionElectromagnetic compatibility Overvoltage categoryProduct categoryProtocolRadio interference classRated impulse withstand voltage (Uimp) System configuration typeMounting position Shock resistance Vibration AltitudeAmbient operating temperature - min Ambient operating temperature - max Ambient storage temperature - min Ambient storage temperature - max< 95 %, no condensation In accordance with IEC/EN 50178Adjustable, motor, main circuit 0.2 - 2.4 A, motor, main circuit < 10 ms, On-delay < 10 ms, Off-delay 97 % (η)2.5 A3.5 mA120 %Maximum of one time every 60 seconds 380 V480 V380 - 480 V (-10 %/+10 %, at 50/60 Hz)U/f controlSynchronous reluctance motors BLDC motors PM and LSPM motors Sensorless vector control (SLV)0 Hz500 HzFor 60 s every 600 s At 40 °C3.6 AClimatic proofingCurrent limitationDelay timeEfficiency Input current ILN at 150% overload Leakage current at ground IPE - max Mains current distortion Mains switch-on frequencyMains voltage - min Mains voltage - max Mains voltage toleranceOperating mode Output frequency - min Output frequency - max Overload current Overload current IL at 150% overload45 Hz66 Hz0.75 kW480 V AC, 3-phase400 V AC, 3-phase0.1 Hz (Frequency resolution, setpoint value)200 %, IH, max. starting current (High Overload), For 2 seconds every 20 seconds, Power section50/60 Hz8 kHz, 4 - 32 kHz adjustable, fPWM, Power section, Main circuitAC voltageCenter-point earthed star network (TN-S network)Phase-earthed AC supply systems are not permitted.1 HP≤ 0.6 A (max. 6 A for 120 ms), Actuator for external motor brakeAdjustable to 100 % (I/Ie), DC - Main circuit10 kAType 1 coordination via the power bus' feeder unit, Main circuit 24 V DC (-15 %/+20 %, external via AS-Interface® plug)AS-InterfacePlug type: HAN Q4/2Number of slave addresses: 31 (AS-Interface®) Specification: S-7.4 (AS-Interface®)Max. total power consumption from AS-Interface® power supply unit (30 V): 190 mA C2 ≤ 5 m, maximum motor cable length C3 ≤ 25 m, maximum motor cable length C1 ≤ 1 m, maximum motor cable lengthMeets the product standard's requirements.Meets the product standard's requirements.Rated frequency - minRated frequency - maxRated operational power at 380/400 V, 50 Hz, 3-phase Rated operational voltageResolutionStarting current - maxSupply frequencySwitching frequencySystem configuration type Assigned motor power at 460/480 V, 60 Hz, 3-phase Braking currentBraking torqueRated conditional short-circuit current (Iq)Short-circuit protection (external output circuits) Rated control voltage (Uc)Communication interfaceConnectionInterfacesCable length10.2.2 Corrosion resistance10.2.3.1 Verification of thermal stability of enclosures10.2.3.2 Verification of resistance of insulating materials tonormal heatMeets the product standard's requirements.Meets the product standard's requirements.Meets the product standard's requirements.Does not apply, since the entire switchgear needs to be evaluated.Does not apply, since the entire switchgear needs to be evaluated.Meets the product standard's requirements.Does not apply, since the entire switchgear needs to be evaluated.Meets the product standard's requirements.Does not apply, since the entire switchgear needs to be evaluated.Does not apply, since the entire switchgear needs to be evaluated.Is the panel builder's responsibility.Is the panel builder's responsibility.Is the panel builder's responsibility.Is the panel builder's responsibility.Is the panel builder's responsibility.The panel builder is responsible for the temperature rise calculation. Eaton will provide heat dissipation data for the devices.ETN.RASP5-2400A31-412R010S1.edzramo5_v26.dwgrasp5_v26.stpeaton-bus-adapter-rapidlink-speed-controller-dimensions-005.eps eaton-bus-adapter-rapidlink-speed-controller-dimensions-004.eps eaton-bus-adapter-rapidlink-speed-controller-dimensions-002.eps eaton-bus-adapter-rapidlink-speed-controller-dimensions-003.epsRapid Link 5 - brochureDA-SW-drivesConnect - InstallationshilfeDA-SW-USB Driver PC Cable DX-CBL-PC-1M5DA-SW-drivesConnect - installation helpDA-SW-Driver DX-CBL-PC-3M0DA-SW-USB Driver DX-COM-STICK3-KITDA-SW-drivesConnectMaterial handling applications - airports, warehouses and intra-logisticsIL034085ZUGeneration change from RA-MO to RAMO 4.0Generation Change RA-SP to RASP5Generation change RAMO4 to RAMO5Generation Change RASP4 to RASP5Generation change from RA-SP to RASP 4.0Configuration to Rockwell PLC for Rapid LinkDA-DC-00004184.pdfDA-DC-00004612.pdfDA-DC-00004613.pdfDA-DC-00003964.pdf10.2.3.3 Resist. of insul. mat. to abnormal heat/fire by internalelect. effects10.2.4 Resistance to ultra-violet (UV) radiation10.2.5 Lifting10.2.6 Mechanical impact10.2.7 Inscriptions10.3 Degree of protection of assemblies10.4 Clearances and creepage distances10.5 Protection against electric shock10.6 Incorporation of switching devices and components 10.7 Internal electrical circuits and connections10.8 Connections for external conductors10.9.2 Power-frequency electric strength10.9.3 Impulse withstand voltage10.9.4 Testing of enclosures made of insulating material 10.10 Temperature rise eCAD model mCAD model,Eaton Corporation plc Eaton House30 Pembroke Road Dublin 4, Ireland © 2023 Eaton. All Rights Reserved. Eaton is a registered trademark.All other trademarks areproperty of their respectiveowners./socialmediaIs the panel builder's responsibility. The specifications for the switchgear must be observed.Is the panel builder's responsibility. The specifications for the switchgear must be observed.The device meets the requirements, provided the information in the instruction leaflet (IL) is observed.10.11 Short-circuit rating10.12 Electromagnetic compatibility10.13 Mechanical function。
Information About Dow Corning ® brand Adhesive/SealantsSilicones and ElectronicsLong-term, reliable protection of sensitive circuits and components is important in many of today’s delicate and demanding electronic applications. Silicones function as durable dielectric insulation, as barriers against environmental contaminants and as stress-relieving shock and vibration absorbers over a wide temperature and humidity range.In addition to sustaining their physical and electrical prop-erties over a broad range of operating conditions, silicones are resistant to ozone and ultraviolet degradation, have good chemical stability and are available in a variety of useful forms as conformal coatings, encapsulants and adhesives.Dow Corning’s broad range of general purpose and specialty products offers you a choice of materials for your application needs.Dow Corning offers a variety of noncorrosive silicone products for electronic sealing, bonding and adhering applications. These adhesives generally fall into three cure types. The first group are moisture cure, generally meant for room-temperature processing. The second type(condensation cure) offers rapid room-temperature and deep-section curing. The third type is heat cure for rapid processing. All convert to durable, relatively low stresselastomers. Most will develop good, primerless adhesion to a variety of common substrates including ceramics, reactive metals and filled plastics.TYPICAL PROPERTIESThese values are not intended for use in preparing specifications.Specification Writers: Please obtain copies of the Dow Corning Sales Specifications for these products and use them as a basis for your specifications. They may be obtained from any Dow Corning Sales Office, or from Dow Corning Customer Service in Midland,MI. Call (517) 496-6000.HEAT CURE TIMESCURE CONDITIONSOne-Part Moisture Cure RTVThe one-part moisture cure adhesives (838, 839, 3165, 3145,3140 and 3-1744) are generally cured at room temperature and in a range of 30 to 80 percent relative humidity. Greater than 90 percent of their full physical properties should be attained within 24 to 72 hours depending on the product chosen. Materials and parts can be handled in much shorter times of about 10 to 120 minutes depending on the product chosen and the amount of material used per part. These materials are not typically used for highly confined or deep section cures. Materials will generally cure about 0.25 inch per seven days from any exposed surface. Cure progresses from the outer surface and is dependent on the moisture in the air. Working time is generally a few minutes to an hour for these products until a surface skin begins to form. Mild heat acceleration of the cure rate may be possible but temperatures above 60°C (140°F) are not recommended.Two-Part Room Temperature Condensation CureDow Corning ® Q3-6093 Silicone Adhesive is the only two-part condensation curing product. Once mixed, cure progresses rapidly at room temperature. Good strength is attained within an hour but full properties are not reached for anumber of days. Q3-6093 adhesive contains its own source of moisture and cure progresses evenly throughout the material.Deep section or confined cures are possible however (see “Reversion”). Working time is only a few minutes.Heat CureThe addition curing adhesives (577, 3-6876, 3-6611 and 3-6265) should be cured at 100°C (212°F) or above. The cure rate is rapidly accelerated with heat (see cure schedulesin table). For thicker sections or if voiding is observed, a 30 minutes pre-cure at 70°C (158°F) may reduce voids in the elastomer. Addition-curing materials contain all the ingredients needed for cure with no byproducts from the cure mechanism. Deep section or confined cures arepossible. Cure progresses evenly throughout the material.These adhesives generally have long working times.PREPARING SURFACESAll surfaces should be thoroughly cleaned and/or degreased with Dow Corning ®brand OS Fluids, naphtha, mineral spirits,methyl ethyl ketone (MEK) or other suitable solvent.Solvents such as acetone or isopropyl alcohol (IPA) do not tend to remove oils well, and any oils remaining on the surface may interfere with adhesion. Light surface abrasion is recommended whenever possible, because it promotes good cleaning and increases the surface area for bonding. A final surface wipe with acetone or IPA is also useful.Different cleaning techniques may give better results than others. Users should determine the best techniques for their applications.ADHESIONDow Corning silicone adhesives are specially formulated to provide unprimed adhesion to many reactive metals,ceramics and glass, as well as to selected laminates, resins and plastics. However, good adhesion cannot be expected on nonreactive metal substrates or non-reactive plastic surfaces such as Teflon ®, polyethylene or polypropylene. Special surface treatments such as chemical etching or plasma treatment can sometimes provide a reactive surface and promote adhesion to these types of substrates. Dow Corning ®brand primers (see “Primer Selection Guide”) can be used to increase the chemical activity on difficult substrates.2P5200 Red is a low-VOC alternative to 1200 Red.3P5204 is a low-VOC alternative to 1204.4The lower VOC value is for states and air quality management districts that have recognized volatile methylsiloxanes as VOC exempt.PRIMER SELECTION GUIDEThese values are not intended for use in preparing specifications.Poor adhesion may be experienced on plastic or rubber substrates that are highly plasticized, because the mobile plasticizers act as release agents. Small-scale laboratory evaluation of all substrates is recommended before production trials are made.In general, increasing the cure temperature and/or cure time will improve the ultimate adhesion.SUBSTRATE TESTINGDue to the wide variety of substrate types and differences in substrate surface conditions, general statements on adhesion and bond strength are impossible. To ensure maximum bond strength on a particular substrate, 100 percent cohesive failure of the adhesive in a lap shear or similar adhesive strength test is desired. This ensures compatibility of the adhesive with the substrate being considered. Also,this test can be used to determine minimum cure time or can detect the presence of surface contaminants such as mold release agents, oils, greases and oxide films.USEFUL TEMPERATURE RANGESFor most uses, silicone elastomers should be operational over a temperature range of -45 to 200°C (-49 to 392°F) for long periods of time. However, at both the low and high temperature ends of the spectrum, behavior of the materials and performance in particular applications can become more complex and require additional considerations.For low-temperature performance, thermal cycling to conditions such as -55°C (-67°F) may be possible, butperformance should be verified for your parts or assemblies.Factors that may influence performance are configuration and stress sensitivity of components, cooling rates and hold times, and prior temperature history.At the high-temperture end, the durability of the cured silicone elastomer is time and temperature dependent. As expected, the higher the temperature, the shorter the time the material will remain useable.COMPATIBILITYCertain materials, chemicals, curing agents and plasticizers can inhibit the cure of addition cure adhesives. Most notable of these include:•Organotin and other organometallic compounds •Silicone rubber containing organotin catalyst •Sulfur, polysulfides, polysulfones or other sulfur-containing materials•Amines, urethanes or amine-containing materials •Unsaturated hydrocarbon plasticizers •Some solder flux residuesIf a substrate or material is questionable with respect to potentially causing inhibition of cure, it is recommended that a small scale compatibility test be run to ascertain suitability in a given application. The presence of liquid or uncured product at the interface between the questionable substrate and the cured gel indicates incompatibility and inhibition of cure.MIXING AND DE-AIRINGUpon standing, some filler may settle to the bottom of the liquid containers after several weeks. To ensure a uniform product mix, the material in each container should be thoroughly mixed prior to use.1Clear only.2Gray only.3UL746C Approved.LISTINGS AND SPECIFICATIONSDow Corning Corporation Midland, Michigan 48686-0994Dow Corning and Sylgard are registered trademarks of Dow Corning Corporation.Teflon is a registered trademark of E.I. du Pont de Nemours Co.©2000 Dow Corning Corporation. All rights reser ved.Printed in USAAGP4781Form No. 10-911A-01Two-part materials should be mixed in the proper ratio (1:1or 10:1) either by weight or volume. The presence of light colored streaks or marbling indicates inadequate mixing.Automated airless dispense equipment can be used toreduce or avoid the need to de-air. If de-airing is required to reduce voids in the cured elastomer, consider a vacuum de-air schedule of >28 inches Hg for 10 minutes or until bubbling subsides.REVERSIONWhen two-part condensation curing materials with organo-tin catalysts, such as Q3-6093 adhesive, are cured in confinement (especially in deep section) and are later subjected to high heat conditions, can potentially revert back from a cured elastomer to a flowable polymer.Although this condition is unusual, parts using Q3-6093adhesive should be thoroughly tested in accelerated temperature conditions for this potential limitation.SOLVENT EXPOSUREWhen liquid or vapor solvent or fuel exposure can occur in an application, the silicone adhesives discussed in thisbrochure are intended only to survive splash or intermittent exposures. They are not suited for continuous solvent or fuel exposure. Testing should be done to confirm performance of the adhesives under these conditions.STORAGE AND SHELF LIFEShelf life is indicated by the “Use Before” date found on the product label.For best results, Dow Corning RTV adhesives should be stored at or below 25°C (77°F). Special precautions must be taken to prevent moisture from contacting these materials.Containers should be kept tightly closed and head or air space minimized. Partially filled containers should be purged with dry air or other gases, such as nitrogen.Dow Corning heat-cure adhesives should also be stored at or below 25°C (77°C). Containers should be kept tightly closed and kept in cold storage at all times to extend shelf life.LIMITATIONSThese products are neither tested nor represented as suitable for medical or pharmaceutical uses.PACKAGINGIn general, Dow Corning adhesives/sealants are supplied in nominal 0.45-, 3.6-, 18- and 200-kg (1-, 8-, 40- and 440-lb)containers,net weight. Not all products may be available in all packages and some additional packages, such as a bladder packs or tubes, may be available for certain coatings and package sizes.SAFE HANDLING INFORMATIONPRODUCT SAFETY INFORMATION REQUIRED FOR SAFE USE IS NOT INCLUDED. BEFORE HANDLING,READ PRODUCT AND MATERIAL SAFETY DATA SHEETS AND CONTAINER LABELS FOR SAFE USE, PHYSICAL AND HEALTH HAZARD INFORMATION. THE MATERIAL SAFETY DATA SHEET IS AVAILABLE FROM YOURDOW CORNING REPRESENTATIVE, OR DISTRIBUTOR,OR BY WRITING TO DOW CORNING CUSTOMER SERVICE, OR BY CALLING (517) 496-6000.WARRANTY INFORMATION – PLEASE READ CAREFULLYThe information contained herein is offered in good faith and is believed to be accurate. However, because conditions and methods of use of our products are beyond our control,this information should not be used in substitution for customer’s tests to ensure that Dow Corning’s products are safe, effective, and fully satisfactory for the intended end use. Dow Corning’s sole warranty is that the product will meet the Dow Corning sales specifications in effect at the time of shipment. Your exclusive remedy for breach of such warranty is limited to refund of purchase price or replace-ment of any product shown to be other than as warranted.Dow Corning specifically disclaims any other express or implied warranty of fitness for a particular purpose or merch-antability. Unless Dow Corning provides you with a specific,duly signed endorsement of fitness for use, Dow Corning disclaims liability for any incidental or consequential damages.Suggestions of uses should not be taken as inducements to infringe any particular patent.。
Trans.Nonferrous Met.Soc.China31(2021)586−594Mechanical and thermo-physical properties of rapidly solidifiedAl−50Si−Cu(Mg)alloys for thermal management applicationJun FANG,Yong-hui ZHONG,Ming-kuang XIA,Feng-wei ZHANGThe43Research Institute of China Electronic Technology Group Corporation,Hefei230088,ChinaReceived20April2020;accepted30October2020Abstract:Al−high Si alloys were designed by the addition of Cu or Mg alloying elements to improve the mechanical properties.It is found that the addition of1wt.%Cu or1wt.%Mg as strengthening elements significantly improves the tensile strength by27.2%and24.5%,respectively.This phenomenon is attributed to the formation of uniformly dispersed fine particles(Al2Cu and Mg2Si secondary phases)in the Al matrix during hot press sintering of the rapidly solidified(gas atomization)powder.The thermal conductivity of the Al−50Si alloys is reduced with the addition of Cu or Mg,by only7.3%and6.8%,respectively.Therefore,the strength of the Al−50Si alloys is enhanced while maintaining their excellent thermo-physical properties by adding1%Cu(Mg).Key words:Al−50Si alloy;rapid solidification;thermal management material;mechanical property;thermo-physical property1IntroductionAl−Si alloys containing high Si contents,also called as Al−high Si alloys or Si p/Al composites, exhibit an excellent combination of thermo-physical properties and mechanical properties,such as low density,excellent thermal conductivity,tailorable coefficient of thermal expansion,and high specific strength[1−4].Additionally,Al−high Si alloys also have good plating ability and laser weldability. There characteristics make Al−high Si alloys attractive for electronic packaging applications in the field of thermal management,especially for chip boxes to protect electronic devices from outdoor environments[5].It is well known that the properties of Al−high Si alloys are determined by the size,shape and distribution of Si phase,including primary Si and eutectic Si phase[6,7].The application of ingot metallurgy(IM)Al−high Si alloys is highly limited by the formation of the coarse and irregular primary Si phase as well as the lager needle-like eutectic Si phase.These microstructural characteristics lead to stress concentration and are detrimental to the mechanical properties and laser weldability. Therefore,a simple and effective route to refine and modify the Si phase is essential to the wide application of Al−high Si alloys.Lots of methods have been employed in the preparation of Al−high Si alloys,such as semi-solid forming[8],melt infiltration[9],ingot metallurgy with modifiers[10,11],powder metallurgy[12], rapid solidification[13]and the recently developed selective laser melting[14,15].According to the literatures,the rapid solidification route is more feasible for mass manufacturing of Al−high Si alloys for thermal management due to the advantages of high efficiency,remarkable refinement effect and ingots with large size.JIA et al[13]reported that the spray deposited Al−50Si alloy can be completely densified by hot isostaticCorresponding author:Jun FANG;Tel:+86-551-65748315;E-mail:******************DOI:10.1016/S1003-6326(21)65521-81003-6326/©2021The Nonferrous Metals Society of China.Published by Elsevier Ltd&Science PressJun FANG,et al/Trans.Nonferrous Met.Soc.China31(2021)586−594587 pressing(HIP)at570°C.Al alloys with Si contentof22%−50%were prepared by gas atomizationfollowed by hot pressing,and near fully densemicrostructure and excellent properties wereobtained[16].Al−30Si alloy prepared by spraydeposition can also be densified by hot pressing,and a continuous network of globular Si phase andan interpenetrating Al matrix were achieved[17].The Al−50Si alloy is widely used as electronicpackaging boxes,which has a high volume fractionof Si and approximately pure Al matrix.However,its strength should be improved in order to expandits application[5].The previous works of Al−highSi alloys for thermal management have beenfocused on the manufacturing technologies,parameters,and the subsequent properties.Generally,the properties of ingot metallurgyAl−high Si alloys can be modified through alloying,such as the A356,A380,and A390alloys[18].BEFFORT et al[19]reported that mechanicalproperties of the squeeze cast60vol.%SiC p/Alcomposites were also highly determined by the Zn,Cu and Mg elements in the Al matrix.However,less attention has been paid to the alloy compositionand the relationship between microstructuralevolution and properties of the Al−50Si alloy.Accordingly,in this work,Al−50Si,Al−50Si−1Cu and Al−50Si−1Mg alloys for electronicpackaging in thermal management weresuccessfully fabricated by rapid solidification(gasatomization)and powder metallurgy(hot pressing)route,and the microstructural characteristics,mechanical properties(tensile and bendingstrength)and thermo-physical properties wereparisons between the effect of Cu andMg addition on the Al−50Si alloys were analyzed based on the microstructural observations and macro-property tests.2ExperimentalPolycrystalline pure Si(99.9%,all the alloy compositions are in mass fraction unless otherwise mentioned)and pure Al(99.95%)were inductively melted at approximately1250°C.Then,Al−50Si pre-alloy powder was fabricated through a nitrogen gas atomization process,and the morphology of the powder particles is shown in Fig.1(a).After mechanical sieving,the Al−50Si pre-alloy powder with particle size less than74μm was mixed with Fig.1SEM morphologies of gas-atomized Al−50Si pre-alloy powder(a),electrolytic Cu powder(b)and inert gas-atomized Mg powder(c)with different shapes 1wt.%electrolytic Cu powder and1wt.%inertgas-atomized Mg powder,respectively.Mechanical mixing was applied for6h in the atmosphere of Ar with the mass ratio of ball to powder of4:1.The Cu and Mg powders having dendritic and spherical shapes are displayed in Figs.1(b)and1(c), respectively.The mixed powder was cold compacted at300MPa and hold for20s,and billets with relative density of approximately78%were obtained.Hot press sintering was employed on the cold compacted billets and held at560°C forJun FANG,et al/Trans.Nonferrous Met.Soc.China31(2021)586−594 58860min at45MPa.Finally,the samples with dimensions of d50mm×10mm were obtained. The hot-pressed alloys were solid solutionized at 500°C for4h and then aged at160°C for24h. Details of the fabrication process is reported in the previous work[16].Chemical compositions of the as-fabricated Al−50Si−X(X=0,Cu,and Mg)alloys were detected using an inductively coupled plasma optical emission spectrometer(IC-OES),and the results are illustrated in Table1.Morphologies of the Al−50Si pre-alloy powders,Cu powder and Mg powder were detected using a scanning electron microscope(SEM,Quanta−200).Hot-pressed samples for microstructural characterization were cut,ground,polished,and etched with Keller’s reagent.Field emission scanning electron microscope(FESEM,Sirion200)equipped with an energy dispersive spectroscopy(EDS)detector was used in the observation of microstructural details. The sizes of Si phase and secondary phases were measured using ImageJ software.The phases present in the Al−high Si alloys were further analyzed using X-ray diffraction(XRD)at a scanning angle of25°−80°.The room temperature tensile and three-point bending tests of samples were carried out on an electronic universal material testing machine (MTS850).The tensile specimens were made into a dumbbell shape according to the standard GB T228—2010with a gauge diameter of6mm. The dimensions of the three-point bending specimen are3mm×10mm×50mm.The tensile fractured surfaces of the specimens were observed using SEM.The Brinell hardness test of the alloy was performed at a load of7.35kN for30s on the polished samples.All the tensile and bending tests were repeated three times to obtain good reproducibility of data.Under the argon atmosphere,coefficient of thermal expansion of the Al−50Si−X alloys was measured in the temperature range of25−300°C using laser flash and calorimetric methods (NETZSCH LFA427/3/G).The sample has a size of 20mm×5mm×5mm and was required to be parallel and smooth at both ends.Thermal conductivity of the three kinds of alloys was performed on cylindrical slice specimens with dimensions of d10mm×3mm using NETZSCH DIL402C.Density of the alloys was measured by Archimedes method using a balance with the accuracy of0.1mg.3Results3.1Microstructural characteristicsTypical microstructures of the as-atomized Al−50Si pre-alloy powder and the hot-pressed Al−50Si−X alloys are shown in Fig.2.It can be seen from Fig.2(a)that the primary Si phase is highly refined to have a block-like morphology due to the large solidification rate and undercooling nature of gas atomization.The eutectic Si phase is also refined remarkably and its shape changes from needle-like with large aspect ratio in the as-cast alloy to bar-like with a low aspect ratio in the as-atomized powder.However,the primary Si seems to distribute mostly at the periphery of powder particles owing to the solidification sequence[20].After hot press,the gas-atomized Al−50Si pre-alloy powder is well densified and a pore-free microstructure is obtained,as shown in Figs.2(b−d). High density of defects,such as pores and cracks were observed in the Al−50Si alloy prepared by ingot metallurgy[21].Consequently,the measured density of the hot-pressed samples is near to the theoretical value.As the density of Cu(8.9g/cm3) is higher than that of Al(2.7g/cm3)while the density of Mg(1.7g/cm3)is lower than that of Al, the addition of Cu or Mg leads to a slight variation of density in the Al−50Si−X alloys.Table1Compositions of rapidly solidified(gas-atomized)and hot-pressed Al−50Si−X alloys measured by ICP-OES (wt.%)Material Si Mg Cu Zn Fe Mn Ti AlAl−50Si50.5<0.01<0.01<0.010.040.02<0.01Bal.Al−50Si−1Cu50.30.05 1.03<0.010.030.01<0.01Bal.Al−50Si−1Mg49.7 1.030.02<0.010.050.01<0.01Bal.Jun FANG,et al/Trans.Nonferrous Met.Soc.China31(2021)586−594589 Fig.2SEM morphologies of gas-atomized Al−50Si pre-alloy powder(a)and as-fabricated Al−50Si alloy(b),Al−50Si−1Cu alloy(c)and Al−50Si−1Mg alloy(d)having similar characteristics of Si phaseIt is seen that a semi-continuous networkstructure with smooth surface of the Si phase isformed in the Al matrix,as seen in Figs.2(b−d).The distribution of Si phase is quite homogeneousas compared with that of the as-atomized powder.Such characteristics of Si phase are highly differentfrom those of the as-cast Al−high Si alloys whichhave coarse and irregular(bar-like,plate-like,star-like,etc)primary Si with sharp corners as wellas needle-like eutectic Si with a large aspectratio[11,21].Furthermore,it is interesting to findthat the eutectic Si is completely absent in thehot-pressed samples due to the diffusion-controlled growth of Si phase and the Si−Si phase clustering in the solid-state sintering.There is no obvious change of the Si phase in the fabricated Al−50Si alloys with and without Cu(Mg)addition besides a little lower degree of the semi-continuous structure.X-ray diffractions were performed to detect the phases presented in the hot-pressed Al−50Si−X alloys,and the results are displayed in Fig.3.It is seen that the diffraction peaks ofα(Al)and Si phase are clearly observed in the samples.With the addition of Cu or Mg,small amounts of Al2Cu and Fig.3XRD patterns of as-fabricated Al−50Si−X alloys showing Al2Cu and Mg2Si secondary phases formed in Al−50Si−Cu/(Mg)alloys:(a)Al−50Si;(b)Al−50Si−1Cu;(c)Al−50Si−1MgMg2Si secondary phases are formed in the Al−50Si−Cu(Mg)alloys.It is noted that,different from the Al−50Si−1Cu alloy,no AlMg secondary phases are formed in the Al−50Si−1Mg alloy. However,as the content of Cu or Mg is only1%, the diffraction peaks of the Al2Cu and Mg2Si phases are not remarkable.Jun FANG,et al/Trans.Nonferrous Met.Soc.China 31(2021)586−594590To further investigate the secondary phases formed in the Al−50Si−Cu(Mg)alloys,magnified SEM observations were conducted and the results are shown in Fig.4.Other than the large Si particles,small needle-like Al 2Cu phase and bar-like Mg 2Si phase are present in the Al−50Si−Cu(Mg)alloys.This result is in consistent with the XRD patterns presented in Fig.3.Although the average sizes of the Al 2Cu and Mg 2Si secondary phases are less than 1μm,most of the Mg 2Si phase is larger than the Al 2Cu phase.Additionally,most of the Al 2Cu phases are dispersed in the center of the Al matrix.However,the Mg 2Si phase seems to distribute mostly near the surface of Si particles.This phenomenon can be attributed to the larger diffusion rate and supersaturation of Mg than those of Si in the Almatrix.Fig.4SEM morphologies and distribution of Al 2Cu (a)and Mg 2Si (b)secondary phases present in Al−50Si−Cu(Mg)alloys3.2Mechanical propertiesThe room temperature tensile tests were performed on the hot-pressed Al−50Si alloys with and without Cu(Mg)addition,and the tensile curves are depicted in Fig.5.The stress−strain response of the Al−50Si alloy is different from that containing Cu and Mg.A very slight plastic deformation of approximately 0.5%strain isobserved in the Al−50Si alloy.Remarkably enhanced ultimate tensile strength (UTS)is achieved in the Al−50Si−1Cu and Al−50Si−1Mg alloys.The plastic behavior is less evident,approximately 0.3%strain to fracture,with the addition of Cu or Mg.This phenomenon indicates that the addition of Cu(Mg)is beneficial to improving the strength of Al−50Si alloy but detrimental to the plasticity of the alloy.Additionally,the slope of the tensile stress−strain response of the Cu(Mg)-contained alloys becomes flatter and higher than that of the Al−50Si alloy,suggesting that the addition of Cu(Mg)also enhances the elastic modulus of thealloy.Fig.5Tensile stress−strain response of rapidly solidified Al−50Si−X alloys at room temperatureAverage values of the tensile strength,bending strength and hardness of the Al−50Si−X alloys were obtained from five parallel tests,and the results are shown in Fig.6.The strength of the Al−50Si alloy is significantly improved with the addition of Cu(Mg).Compared with the reference sample,the addition of 1%Cu raises the tensile and bending strength from 185.7and 288.6MPa to 236.2and 390.5MPa,with increments of 27.2%and 35.3%,respectively.Similarly,the addition of 1%Mg results in an enhancement of tensile and bending strength by 24.5%and 29.0%,respectively.At the same time,the addition of alloying elements also increases the hardness of the Al matrix.From Fig.6,it is also found that the strengthening effect of Cu is slightly higher than that of Mg.This phenomenon can be attributed to the fine and homogeneous distribution of the Al 2Cu secondary phase at the center of the Al matrix.Additionally,according to the image analysis from SEM results,the average size of Al 2Cu phase is a little smallerJun FANG,et al/Trans.Nonferrous Met.Soc.China31(2021)586−594591Fig.6Tensile strength,bending strength and hardness of rapidly solidified Al−50Si−X alloysthan that of the Mg2Si phase,which may also contribute to the higher strength of the Al−50Si−1Cu alloy.Tensile fractured morphologies of Al−50Si−X alloys are displayed in Fig.7.All samples show a clear brittle fracture feature.It is seen that the fracture planes of the alloys are vertical to the tensile direction and no visible macro-ductility fracture is observed.As seen from Fig.7(a),the crack source of the alloy with rather flat morphology is clearly observed.The crack progresses rapidly in a linear way through the sample when external pressure is applied.Figures 7(b−d)show that the Al matrix fractures by ductile rupture with tearing ridge while the Si phase fractures by cleavage surface.As there is a high volume fracture of Si phase(approximately53.7%) with semi-continuous structure,the Si particle dominated brittle fracture is the main mode of the Al−50Si alloys.The previous observation suggests that the crack tip moves through brittle fracture of the Si particles and finishes by ductile fracture of the Al matrix[22].Generally,metal matrix composites(MMCs)reinforced with high volume of reinforcement fracture in such particle dominatedFig.7Low magnification micrograph showing crack source of Al−50Si alloy(a)and high magnification micrographs of Al−50Si alloy(b),Al−50Si−1Cu alloy(c)and Al−50Si−1Mg alloy(d)Jun FANG,et al/Trans.Nonferrous Met.Soc.China 31(2021)586−594592mode [23,24].Additionally,dimples with small size are observed in the alloys due to the refined microstructure as a result of rapid solidification and solid-state sintering.However,three kinds of alloys show typical brittle fracture,and the difference among fractured morphologies is less visible.3.3Thermo-physical propertiesVariations of coefficient of thermal expansion (CTE)of the Al−50Si−X alloys as a function of temperature in the range of 25−300°C are shown in Fig.8.It is observed that the coefficient of thermal expansion increases linearly with the increase of testing temperature.The Al−high Si alloys can be regarded as Si particle reinforced Al matrix composites (Si p /Al)and the coefficient of thermal expansion of the alloy is mainly determined by the properties of the Al matrix and Si phase and the volume fraction of the Si phase according to the rule of mixture (ROM).As seen from Fig.2,there is little deviation of the volume fraction,size,and morphology of Si phase.Consequently,the coefficients of thermal expansion of the Al−50Si−X alloys are determined mainly by the properties of Al matrix.Owing to the presence of Al 2Cu and Mg 2Si secondary phase having lower coefficient of thermal expansion,the total thermal expansion of Al−50Si alloys is reduced.JIA et al [13]reported that no plastic deformation occurs in the Al matrix at low temperatures.The expansion of the alloys is caused by the combined expansion of the Al matrix and Si phase and results in the linearly increased coefficient of thermal expansion with increasingtemperature.Fig.8Coefficient of thermal expansion of rapidly solidified Al−50Si−X alloys in temperature range of 25−300°CThermal conductivity of the Al−50Si−X alloys is illustrated in Fig.9.Owing to the rapid solidification nature of gas atomization and the diffusion-controlled growth of Si phase during hot pressing,the Si phase has a semi-continuous structure with smooth surface,which contributes to the excellent thermal conductivity of the Al−50Si alloy,146.2W·m −1·K −1.At the same time,Si has low solid solubility in the Al matrix with equilibrium state,and a near pure Al matrix after hot pressing may also help for achieving high thermal conductivity of the alloy.However,the formation of the Al 2Cu and Mg 2Si secondary phases in the Al−50Si−Cu(Mg)alloys has a scattering effect on the free electron motion and hinders the thermal conduction [25].Consequently,the thermal conductivities of the Al−50Si alloy containing 1%Cu and 1%Mg are reduced by 7.3%and 6.8%,respectively.In comparison with the exceptionally improved strength of the Al−50Si alloy,this reduction of thermal conductivity is within the acceptable limit (≥120W·m −1·K −1).Fig.9Thermal conductivity of rapidly solidified and hot-pressed Al−50Si−X alloys at room temperature4Conclusions(1)Gas atomization endows the pre-alloyed Al−50Si alloy powder with highly refined primary and eutectic Si phase,and in combination with the subsequent solid-state hot-pressing,the Si phase with semi-continuous network structure is obtained.By adding 1%Cu or 1%Mg,Al 2Cu or Mg 2Si secondary phases are observed,respectively,but the influence on the Si phase characteristics is limited.(2)Tensile strength,bending strength and hardness of the Al−50Si alloys are 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高温测试的英文High Temperature TestingIntroductionHigh temperature testing is a crucial process in various industries, including automotive, aerospace, electronics, and materials testing. This test evaluates the performance and reliability of products and materials under extreme heat conditions. It helps manufacturers ensure that their products can withstand high temperatures, prevent failures, and maintain optimal functionality.Purpose of High Temperature TestingThe primary purpose of high temperature testing is to simulate real-world conditions and understand how products or materials behave when exposed to elevated temperatures. This testing ensures that the product meets customer expectations, complies with industry standards, and performs reliably even in extreme environments. Additionally, high temperature testing helps identify design flaws, manufacturing errors, and weak points that can result in failures or accidents.Methods of High Temperature TestingThere are several methods commonly used for high temperature testing:1. Ambient high temperature testing: In this method, the product or material is placed in a controlled environment with elevated temperatures. The temperature is gradually increased and maintained for a specific period to simulate long-term exposure. This method aims to evaluate the product's performance and reliability under constant high temperatures.2. Cycling high temperature testing: This method involves subjecting the product or material to alternating high and low temperatures. The temperature is cycled within a specific range for a defined number of cycles. This test helps assess the thermal fatigue resistance, dimensional stability, and the ability of the product to withstand repeated temperature changes.3. Rapid temperature change testing: This testing method involves exposing the product or material to rapid temperature changes. This process simulates sudden temperature fluctuations that may occur during transportation, start-up, or environmental conditions. It helps evaluate how the product responds to thermal shocks and assess its thermal stress resistance.4. Thermal gradient testing: In this method, a temperature gradient is created across the product or material. This test helps evaluate the thermal conductivity, heat transfer properties, and thermal stresses that occur due to temperature variations. Itprovides valuable information on how the product is affected by temperature gradients and helps optimize its design.Equipment Used in High Temperature TestingHigh temperature testing requires specialized equipment to create and control extreme heat conditions. Some commonly used equipment includes:1. Climatic chambers: These chambers have temperature control mechanisms that can simulate a wide range of high temperatures. They are designed to maintain a consistent temperature throughout the testing process.2. Ovens and furnaces: These are used to subject materials or small components to high temperatures for extended periods. Ovens are generally used for ambient high-temperature testing, while furnaces can reach higher temperatures and are suitable for materials testing.3. Thermal shock chambers: These chambers are used in rapid temperature change testing. They can quickly transition between hot and cold temperatures to simulate sudden thermal shocks.4. Thermal conductivity meters: These devices measure the thermal conductivity and heat transfer properties of materials. They are crucial in thermal gradient testing to evaluate how materials respond to temperature variations.Benefits of High Temperature TestingHigh temperature testing offers several benefits to manufacturers and consumers:1. Reliability and safety: Testing products and materials at high temperatures helps identify potential failures that may occur in extreme conditions. This ensures that the product performs reliably and safely, reducing the risk of accidents or malfunctions.2. Compliance with regulations and standards: Many industries have specific regulations and standards regardinghigh-temperature performance. Testing ensures that the product meets these requirements and avoids penalties or legal repercussions.3. Cost savings: Identifying design flaws or weak points during testing helps manufacturers make necessary improvements before mass production. This prevents costly recalls, warranty claims, and customer dissatisfaction.4. Enhanced product performance: High temperature testing helps manufacturers optimize product design and materials for better performance and durability under extreme conditions. This can lead to improved customer satisfaction and increased market competitiveness.ConclusionHigh temperature testing is a crucial step in ensuring the reliability, safety, and performance of products and materials. By subjecting them to extreme heat conditions, manufacturers canidentify weaknesses, make necessary improvements, and deliver high-quality products that meet customer expectations. This testing process plays a vital role in various industries, helping them comply with regulations, reduce costs, and provide superior products to consumers.。
Chemical ProductsCOMPLETE LINE•New and Improved Formulations•CFC/HCFC Free Chemicals •Color-Coded Aerosol CapsBlack –Industrial Use Only White –General Use•Full Spectrum Cleaners•Developed and Manufactured to Industrial StandardsINTRODUCTIONToday’s electronics industry requires a diverse line of products for manufacturing,maintenance,and upkeep.The selection of the correct specialty product for a particular application may be a difficult proposition.This product guide provides detailed applications,descriptions and compatibility information for each product.Also,color-coded caps,Black (Industrial)and White (General)are quick indicators for use.Environmental concerns are one of the leading issues facing the industry today.NTE Electronics,Inc.has set a goal to reduce and/or eliminate ozone depleters from their products while maintaining and improving performance.The inclusion of CFC/HCFC free chemicals is another step closer to that goal.Whether for electronics manufacturing,maintenance,or upkeep,NTE Electronics,Inc.offers an extensive line of high quality ECG ®chemical products and accessories to serve your needs.The information contained herein is believed to be accurate.However,no responsibility is assumed by NTE Electronics,Inc.for its use nor for any infringements of patents or other rights of third parties which may result from its use.Reproduction,without express permission,of editorial or pictorial content,in any manner,is prohibited.P r o f e s s i o n a l Q u a l i t yECG ®is a registered trademark ofChemical Products®Copyright 2013NTE Electronics,Inc.Part No.NTE303•1Gram TubePart No.NTE424•1oz.Plungerother devices.Reworkable/easy to remove as well as easy to dispense.MIL-C-47113&MIS-19846specseCleanerNo.RX1900-4•4oz.Aerosol•12.5oz.AerosolRX166Strawkeepers•Keeps straw attached to variety of containers•Maintains straw underextreme conditions•Extremely durable materialFor Industrial and General UseRX166Strawkeeper keeps straw attached to container,so you will never lose your straw again.Use for:•Repair Services,Mechanical,Industrial,Electrical,Refineries,Chemical Plants,Home Use and morePart No.RX166•StrawkeeperRX166®Copyright 2013NTE Electronics,Inc.ECG ®is a registered trademarkof NTE Electronics,IncEL36-01NTE Electronics,Inc.44Farrand Street,Bloomfield,NJ 07003Phone:Distributed by:768249102267。
快速温变测试标准快速温变测试标准(Rapid Thermal Change Test Standard, RTCT)是一个有广泛应用和重要意义的标准,主要用于评估电子、光电子、光学、航空航天、汽车、机械等领域中的材料和器件在温度变化下的稳定性和可靠性。
(一) RTCT的主要作用RTCT的主要作用是评估材料和器件在由低温到高温、从高温到低温时的温度变化对它们的物理性能、电性能、光学性能以及结构强度等方面的影响。
因此,这个标准对于材料和器件在极端温度环境下的可靠性和稳定性的评估具有重要意义。
(二) RTCT的应用范围RTCT主要应用于以下领域:1. 电子:半导体材料、集成电路和电子器件的可靠性测试。
2. 光电子:激光器、探测器、光纤、光通信设备等的可靠性评估。
3. 光学:光学元件、透镜、光学仪器等的材料、结构可靠性测试。
4. 航空航天:飞机、火箭、卫星等飞行器中的材料和器件的可靠性评估。
5. 汽车:汽车发动机、刹车系统、悬挂系统的可靠性测试。
6. 机械:重型机械、振动设备等的温度稳定性和可靠性评估。
(三) RTCT的基本流程RTCT的基本流程包括以下几个步骤:1. 标准温度范围的设定:根据被测试物品的应用领域和环境要求,制定相应的标准温度范围。
2. 温度变化速率和稳定时间的设定:按照标准温度范围,制定温度变化速率和稳定时间的标准。
3. 试样的准备:准备符合要求的试样,包括材料、几何形状、尺寸等。
4. 试验环境的准备:准备符合标准的温度控制的试验环境。
5. 温度环境的变化:按照规定的温度变化速率,控制渐变过程和稳定时间。
6. 试样性能测试:在温度变化的不同阶段,对试样的电性能、结构性能、物理性能等关键性能进行测试。
(四) RTCT的优点1. 时间、资源、成本节约:快速完成试验,减少需求的测试时间、资源和成本。
2. 提高效率:快速达到不同温度条件下特定的温度和稳定时间,尽快揭示材料和器件的可靠性和稳定性。
INTRODUCING . . .•Entry Level Rapid Testing System provides combined Environment Accelerated Testing:–Rapid Thermal changes from +200° C to -100° C–Six Degree of Freedom Repetitive Shock Vibration •Portable for easy movement between departments •Easy to use with preset programs & remote monitoring•xLF2 Vibration Table with PSD Management Standard FeaturesWork Space19.0”w x 16.0”d x 10.0”h(482 x 406 x 254mm)Outer Dimensions32.8”w x 43.5”d x 56.1”h(833 x 1105 x 1425mm)Table Size16.0”w x 12.0”d(406 x 304mm)Table Capacity50 lbs (23 kg)Actuators 2 Lubricant-free Actuators Acceleration 4 – 40 gRMS typicalTemp Range+200°C to -100°CThermal Ramp Range Up to 40°C / minPower Requirements208VAC / 40A / 1Φ 50/60Hz208VAC / 25A / 3Φ 50/60HzAir Requirements 20 scfm at 80 psi*Patent PendingPortable Rapid Testing SystemThousands of companies embrace combined environment accelerated testing that includes vibration (typically on an ED Shaker) and thermal testing, to rapidly improve the reliability of their electronic product designs. Conducting this practice early is most beneficial, as reliability can most easily be improved early in the development process. Qualmark’s new Portable Rapid Testing System takes this to a whole new level. HawQ preys on and exposes failure points, and screams through thermal testing in a fraction of the time of traditional thermal chambers. This leading edge system allows you to conduct rapid testing with thermal change rates of 40°C/min from -100 to +200°C! By maxi-mizing the thermal cycles performed in 24 hours, you slash your testing time! Time is money, and HawQ will help you save it! But not just that, HawQ also delivers Six Degree of Freedom vibration at the simple push of a button. By utilizing the ultimate combined environment of rapid thermal changes plus vibration, your designs will fly through reliabil-ity testing. "Through this process, we have improvedfirst-pass success during subsequent MIL-STD-1540 qualification testing, reduced the number of problems once in production, and improved... performance. These results are vitally important to our profit bottom line, plus they improve customer and insurance provider confidence in our ability to introduce new technology successfully." [White Paper by Brian Kosinski & Dennis Cronin, Space Systems/Loral]HawQ is a cost effective, portable solution that is available for purchase or lease to utilize in, or near, product development groups. The Portable Rapid Testing System provides an easy to use solution with Ethernet/WiFi options to allow for remote monitoring by development teams, and is a quiet, vibration-isolated system for virtually all develop-ment teams, R&D, Reliability, and University Labs.®E s t a b l i s h e d1981Center of ExcellenceThe strategic focus ofQualmark's Center of Excel-lence (COE) is to reduce customer warranty costs that are attributable to product failures by deploying and supporting a Accelerated Reliability Testing program.The COE team gathersinformation about the product from customer design experts and applies decades of experience and specialized knowledge in Accelerated Stress Testing to deliversolutions that will significantly reduce existing warranty costs and proactively mitigatewarranty costs in new designs.Contact the COE TODAY to request training for optimum HALT utilization.***********************New System Includes:•One (1) year warranty•Operations & Maintenance manual •Multi-pane Viewing Window•LN2 Cooling System (Cylinders provided separately)•PC or Monitor (optional)•System Manager Software (optional)•System start-up by QM certified service engineer (optional)•System and software orientation (optional)•Thermal AlarmsFeatures and Benefits*Patent PendingVibration Features Table Top16.0” x 12.0” (406 x 304mm)Table Top Hardware12 threaded 3/8-16 holes on 4” centers;M10-1.5 thread optionalActuators 2 pneumatic, impulse-type, lubricant-free actuators VibrationSix degree of freedom, random, Omni Axial™ broadband excitation Table Product Capacity50 lbs. (23 kg) Vibration Range 5-40 gRMSThermal Features Heating SystemOpen-element nichrome type Cooling System LN2 - insulated solenoid valveTemperature Range +200°C to -100°C ( +392°F to -148°F)Thermal Ramp Range Heating: up to 35°C / min (average)Cooling: up to 40°C / min (average)Internal Features Interior Dimension 19.0”w x 15.0”d x 10.0”h (482 x 381 x 254mm)Interior Volume 1.65 cu/ftInternal Construction Stainless Steel Exterior FeaturesExterior Dimensions 28.0”w x 33.0”d x 60.0”h (711 x 838 x 1524mm)External Construction Painted steel constructionDoor1 lifting door, opens approximately 100° Window(1) 15” x 5” (381 x 127mm) multi-pane window in the door Access Ports (2) 2” ports, one on each sideSoundNominally <72dBA measured at 1 meter10390 E 48th Street, Denver, CO 80238-2620 USAPhone +1.888.425.8669© 2013 Qualmark, All Rights Reserved. Printed In U.S.A Doc ID: 920-0366Options & Accessories•QDaq Data Acquisition •Spectrum Analyzer •PC with HawQ Manager Software•HawQ Manager Software •Basic Fixture Kit •PCA Fixture Clamps •O2 Sensor •Dewar Kit•Multiple Dewar KitTouch-screen PLCOver-temp Shutdown Easy On/O /Pause Buttons。
高温测试的英文翻译The Importance of High-temperature TestingIntroduction:High-temperature testing plays a crucial role in various industries, including automotive, aerospace, electronics, and energy. This testing process is designed to evaluate the performance and reliability of materials, products, and components under extreme temperature conditions. In this document, we will explore the significance of high-temperature testing, its applications, and the techniques involved.Significance of High-temperature Testing:1. Simulation of Extreme Conditions: High-temperature testing allows professionals to simulate extreme conditions that products may encounter during their lifecycle. This helps in identifying potential weaknesses and determining their effects on the overall performance and durability of the product.2. Reliability Assessment: By subjecting materials and products to high temperatures, it becomes possible to assess their reliability and predict their behavior under actual operating conditions. This helps in uncovering potential issues before they occur, reducing the likelihood of failures in real-world scenarios.3. Quality Assurance: High-temperature testing serves as an important quality assurance measure. It helps manufacturers evaluate their products' ability to withstand elevated temperatures and identify any design or manufacturing flaws that may lead to malfunctions.Applications of High-temperature Testing:1. Automotive Industry: High-temperature testing is vital in the automotive sector to ensure the reliability and safety of various components such as engines, exhaust systems, and electronic modules. This testing allows manufacturers to evaluate the performance of materials under extreme heat conditions and prevent potential failures that could result in accidents.2. Aerospace Industry: In the aerospace industry,high-temperature testing is used to assess the performance of materials and components under extreme heat conditions experienced during space travel or atmospheric re-entry. This testing helps ensure the safety of spacecraft and avoids catastrophic failures.3. Electronics Industry: Electronics devices, such as computer chips and circuit boards, generate heat during their operation. High-temperature testing allows manufacturers to evaluate the thermal performance and durability of these components, preventing overheating and extending their lifespan.4. Energy Industry: High-temperature testing is crucial in the energy sector, particularly for power generation and transmission equipment. It helps assess the performance and reliability of turbines, transformers, and other devices that operate under high temperature conditions, ensuring efficient and uninterrupted power supply.Techniques Involved in High-temperature Testing:1. Thermal cycling: This technique involves exposing the product or material to repeated cycles of extreme temperatures to observe its performance and measure any dimensional changes that occur.2. Thermal shock: Thermal shock testing subjects the product to sudden and extreme temperature changes to assess its ability to withstand rapid shifts in a real-world environment.3. Constant high-temperature testing: In this technique, materials or products are exposed to a constant high temperature for an extended period to evaluate their long-term performance and durability.4. Creep Testing: Creep testing involves subjecting the material to a sustained high temperature to measure the amount of deformation that occurs over time. This helps assess the material's stability and structural integrity.Conclusion:High-temperature testing is a critical process that enables industries to evaluate the performance and reliability of materials, products, and components under extreme temperature conditions. It has wide-ranging applications and helps ensure the safety, durability, and quality of various products in industries such as automotive, aerospace, electronics, and energy. By subjecting materials and products to extreme temperatures, manufacturers can identify potential weaknesses, improve product designs, and enhance overall performance.High-temperature testing is an essential measure to guarantee the reliability of products and prevent failures that could have serious consequences.。
加速量热仪(ARC)在锂离子电池安全评估中的应用金慧芬天津力神电池股份有限公司CIBF 2008.06.25主要内容1. 基本介绍2. ARC系统及基本工作原理3.工作界面,工作模式及测试模式4.测试样品所需提供的参数及数据分析5. ARC在锂离子电池安全评估中的应用5.1安全评估的重要意义5.2 正极材料5.3 负极材料5.4 电解液5.5 全电池5.6 材料分解机理研究1. 基本介绍•加速量热仪是由美国DOW化学公司在上个世纪七十年代研制成功的。
1979年,首次作为商业化的仪器来出售。
加速量热仪设计的目的是模拟放热的化学反应并记录和储存该过程的信息数据:时间、温度和压力。
主要的设计特点是拥有非常高的绝热环境,可以由小规模的实验测试结果外推到大的工业规模。
•和以往的相比,THT公司的加速量热仪具有这几个特点:持续、改进和扩充。
既保留了最初的加速量热仪的尺寸大小和相似的测试方案,又扩充了它的用途。
这里主要指它在电池研究方面的应用。
THT-ARC有以下三个增加选项:(a)电池循环单元-KSU(b)电池安全单元-BSU(c ) 气体排放单元-FEUP/Transducer 8 J/ Heaters测试模式类型标准测试加热-等待-搜寻4.测试样品所需提供的参数及数据分析1.数据类型*.INI *.CAL *.DAT *.EXO *.BAT 2.曲线类型a.通过原始数据所得曲线b.通过计算所得曲线图•温度、压力—时间图•自加热速率—时间图•升压速率—时间图•温度—压力图•自加热速率—温度图•升压速率—压力图•自加热速率—升压速率•到达最大温升速率的时间—温度图•活化能的确定•动力学建模•反应热的确定a.通过原始数据所得曲线b.通过计算所得曲线图(动力学和热力学分析)•样品的组成(纯度)•样品的密度•样品的比热•样品的重量测试样品所需提供的参数数据分析标准测试实时数据曲线:样品DTBP/Toluene从图中可以看到放热反应110℃左右开始到200℃左右结束放热反应期间温度,压力随时间变化图自加热速率随温度变化图从该图上可以得到反应热,应用模型可以得到动力学信息该图可以确定最大安全温度和到达发生爆炸的时间,这个曲线总用Ф值来修正,并且经常可以外推数学分析,可以计算活化能、反应热实验数据和模型数据相比较5. ARC在锂离子电池安全评估中的应用5.1 安全评估的重要意义5.2 正极材料5.3 负极材料5.4 电解液5.5 全电池5.6 材料分解机理研究近期锂离子电池爆炸所造成的事故HP AppleDell5.1 安全评估的重要意义(电池安全设计提供指导)•EV/HEV所用的大型电池(散热差,能量大)•热失控–高功率、大电流输出–过度充电–滥用或短路•在电池内部会积累热量、增加内压•由于有机电解液的存在,电池可能会燃烧或爆炸Self-heating rate vs. temperature for the three0.5CoO 2samples with 1M LiPF 6EC/DECStopped at 220℃Self-heating rate vs. temperature of 100mg of5.3 负极材料(材料类型,比表面积及电解液成分)Comparison between the self-heating rate profiles of lithium-intercalated MCMB and Fiber samples in LiPF 6EC/DEC(33:67)Source: D.D. MacNeil’s thesisSelf-heating rate versus temperature for 100 mg Li 0.81C 6(dashed line), (a) 40mg Li 1Si, (b) 20mg Li 2Si and (c) 15mg Li 3Si (solid line) reacting with 1M LiPF 6EC:DEC electrolyte. (Notice that Li x Si materials are less reactive than graphite!)Source:http://fizz.phys.dal.ca/~dahn/re search/li_safety.html5.4 电解液(锂盐的种类,添加剂)Source:JPS119-121(2003)799-804Self-heating rates vs. temperature for EC:DEC:DMC(2:1:2) 1M solutions of LiFAP,LiPF 6and LiBETISource:JPS119-121(2003)383-387Self-heating rate profiles for 100% SOC graphite electrodes in the 1M LiPF 6EC:DEC (1:1) electrolyte with and without flame-retardant additives5.4 电解液(锂盐浓度)Source: D.D. MacNeil’s thesisSelf-heating rate profile of 0.2g of Li 0.5CoO 2in the presence of LiPF 6EC/DEC(33/67) with various concentrations of LiPF 6Temperature vs. time and self-heat-rate vs. temperature for 18650 cell with different cathode material at 100% SOC.(Cell system: LFP/ Graphite)5.5全电池(LCO/Graphite体系极限爆炸温度)Temperature vs. time , self-heat-rate vs.temperature and pictures for prismaticcells(100%SOC,LCO/Gr.system)at differentterminating temperature.图1 Li 0.5CoO 2典型热分解ARC 曲线Thank youQ&A。
化工进展Chemical Industry and Engineering Progress2023 年第 42 卷第 7 期绝热加速量热仪在反应安全风险评估应用中的常见问题吴展华1,2,盛敏1,2(1 华东理工大学资源与环境工程学院,上海 200237;2 华东理工大学反应安全中心,上海 200237)摘要:绝热加速量热仪(ARC )目前已被广泛运用于反应安全风险评估中。
本文在总结ARC 在反应安全风险评估中应用的基础上,指出在进行ARC 测试时一些常见问题一直被人忽略,这些问题中一部分是可以通过更好地设计实验方法来避免,如进样量过少、样品池的不兼容性和样品低温反应等问题;另外一部分是仪器自身的问题,需要了解其根本原因从而避免使用错误的数据得出错误的结论,如绝热炉最大温升速率限制、压力链接接头的热损失、压力链接管道中的蒸气冷凝和温升速率较大时ARC 样品温度测量准确性等问题。
本文就这些问题作系统性分析,旨在提醒科研学者可以更好地设计实验和解读数据。
文中分析得出结论:推荐ARC 进样量为4g 左右,选择与测试样品兼容的样品池,尽量使用新制备的样品做测试,且能分辨当样品的最大温升速率大于ARC 绝热炉的最大温升速率时的非绝热数据。
文章总结以上几种方法为在工艺反应安全风险评估中更准确地使用ARC 数据提供参考。
关键词:安全;化学反应;不稳定性;测量;绝热加速量热仪;反应安全风险评估中图分类号:TQ016.5 文献标志码:A 文章编号:1000-6613(2023)07-3374-09Pitfalls of accelerating rate calorimeter for reactivity hazard evaluationand risk assessmentWU Zhanhua 1,2,SHENG Min 1,2(1 School of Resources and Environmental Engineering, East China University of Science and Technology, Shanghai200237, China; 2 Reactivity and Chemical Safety Center, East China University of Science and Technology, Shanghai200237, China)Abstract: The accelerating rate calorimeter (ARC) has been widely used in reactivity hazard evaluation and risk assessment. Based on the summary of the application of ARC in reaction safety risk assessment, this paper points out that there are many pitfalls users may run into when doing ARC tests. Some of them can be avoided by careful experiment design, such as insufficient sample loading, sample cell incompatibility, and the tested sample reaction at ambient temperature. The other pitfalls are caused by the instrument limitations, such as the limit of maximum temperature rate due to furnace heating limit, heat loss to pressure through fittings, condensation issues in pressure tubing, and the accuracy of sample temperature measurement when the self-heat rate is large. This article emphasizes these pitfalls to provide other researchers with a reference for better designing experiments and interpreting data. The analysis concludes that the following are recommended for ARC test: about 4g sample load, selection of a特约评述DOI :10.16085/j.issn.1000-6613.2023-0509收稿日期:2023-04-03;修改稿日期:2023-05-17。
OverviewThe GE Energy Infinity D™ DC energy system is a modular power plant that supports dual voltage (+24V/- 48V) operation through the use of a comprehensive range of state of the art rectifiers and DC-DC converters. Primary voltage is supported by rectifiers and battery reserve, while secondary voltage is supported by DC-DC converter modules. Primary voltage can be -48V or +24V.The Infinity D Power System has primary voltage capacity for +24V and -48V power up to 1,600A; secondary voltage capacity is up to 300A per expansion module.Shelf OptionsThe Infinity D Power System is built upon a modular architecture that consists of 8” (203mm) tall system modules. The system modules are complete “mini systems” which can be combined to form larger systems. Since each system module is an optimized combination of power and distribution there is minimal unnecessary capacity and cost is minimized. As the system is expanded,additional optimized combinations of capacityare added, again minimizing incremental cost. System modules are added to achieve up to 1,600A capacity.Infinity Rectifier and Converter FamilyThe Infinity D offers DC rectifiers andconverters for both +24V to -48V and -48V to +24V applications. Rectifiers and converters are color coded to quickly identify both the voltage and whether it is a rectifier or converter (orange for +24V and blue for -48V).Rectifier and Converter Options:- NE100AC24ATEZ Rectifier, 100A/24V Output - NE050AC48ATEZ Rectifier, 50A/48V Output- NE075DC24 Converter, 75A/24V Output - NE030DC48 Converter, 30A/48V OutputPulsar Plus ControllerThe Infinity D utilizes the industry leading Pulsar Plus controller with Ethernet and SNMP communications to deliver extensive monitoring and control features with remote access.• Modular DC power system enables low initial investment with future expansion potential •-48V up to 1,600A (87KW) or +24V up to 1,600A (44KW)• DC Power Plant with 24V and 48V DC dual voltage flexibility • High availability wireless telecom applications • Telecom service providers and OEMs • Efficiency approaching 97%Infinity D ™ Power SystemDual Voltage, Modular Power SystemInfinity Rectifiers and ConvertersApplicationsKey FeaturesSpecifications• Compact – 1RU form factor providing high power density (24 W/in3)• Dual Voltage compatibility – the unique connector pin designation allows the rectifier to be used in a “universal” power shelf, alongside rectifiers or DC-DC converters with different output voltages.• Plug and Play – installation of the rectifier in a shelf connected to a compatible system controller initializes all set up parameters automatically. No adjustments are needed.• Extended service life – parallel operation with automatic load sharing ensures that parallel units are not unduly stressed even when a unit fails or is removed.• Monitoring / control – the built in microprocessor controls and monitors all critical rectifier functions and communicates with the system controller using the built in Galaxy Protocol serial interface. • Fail safe performance – hot insertion capabilities allow for converter replacement without system shutdown; soft start and inrush current protection prevent nuisance tripping of upstream breakers.• Telecommunications networks • Digital subscriber line (DSL)• Indoor/outdoor wireless• Routers/switches • Fiber in the loop • Transmission• Data networks • PBX• Extended temperature range • Redundant fan cooling • Front panel LED indicators• 1U height, hi power density • 220/110V AC input • Digital load sharing• Hot pluggable •RoHS compliantPulsar Plus ControllerApplications Key Features The Pulsar Plus family of controllers providessystem monitoring and control features forInfinity, CP, and other power systems. Thesecontrollers monitor and control systemcomponents including rectifiers, converters,and distribution modules via a multi-dropRS485 digital communications bus. Systemstatus, parameters, settings, and alarmthresholds can be viewed and configuredfrom the controller’s front panel display.Assignment and configuration of alarminputs and output relays can be performedfrom a laptop computer connected to alocal RS-232 or Ethernet port, or by remoteaccess is through a network connection to theWorld Wide Web (internet) or your enterprisenetwork (intranet). An optional modem is alsoavailable.This controller utilizes standard networkmanagement protocols allowing for advancednetwork supervision. The GE Energy GalaxyManager™ software is the centralized visibilityand control component of a comprehensivepower management system designed to meetengineering, operations and maintenanceneeds. The Galaxy Manager client-serverarchitecture enables remote access to systemcontrollers across the power network.• Telecommunications networks • Digital subscriber line (DSL) • Indoor/outdoor wireless • Routers/switches• Fiber in the loop• Transmission• Data networks• PBXRemote Access and Features• Integrated 10/100Base-T Ethernet Network - TCP/IP- SNMP V2c for management- SMTP for email- Telnet for command line interface- DHCP for plug-n-play- FTP for rapid backup and upgrades- HTTP for standard web pagesand browsers- Compatible with Galaxy Managerand other management packages - Shielded RJ-45 interface referencedto chassis ground• Password protected security levels: User, Super-User, Administrator for all access • Ground-referenced RS232 system port • ANSI T1.317 command-line interface• Modem access support- Remote via external modem- Callback security• EasyView2, Windows-based GUI software for local terminal or Modem access Standard System Features• Monitor and control of more than 40connected devices- Robust RS485 system bus• Standard and user defined alarms- Alarm test- Assignable alarm severity: Critical,Major, Minor, Warning, and record-only- 10 alarm relays (7 user assigned)• Rectifier management features- Automatic rectifier restart- Active Rectifier ManagementARM (energy efficiency)- Remote rectifier (on/off)- Reserve Operation- Automatic rectifier sequence control- N + X redundancy check• Multiple Low Voltage Load and Low VoltageBattery Disconnect thresholds• Configuration, statistics, and history- All stored in non-volatile memory- Remote/local backup and restore ofconfiguration data• Industry standard defaults- Customer specific configurationsavailable• Remote/ local software upgrade• Basic, busy hour, and trend statistics• Detailed event history• User defined events and derived channelsStandard Battery Management Features• Float/boost mode control- Manual boost- Manual timed boost locally, T1.317,and remotely initiated- Auto boost terminated by time orcurrent• Battery discharge testing- Manual (local/remote)- Periodic- Plant Battery Test (PBT) input driven- Configurable threshold or 20%algorithm- Graphical discharge data- Rectifiers on-line during test• Slope thermal compensation- High temperature- Low temperature- Step temperature- STC Enable/Disable, low temperatureEnable/Disable- Configurable mV/°C slopes• State of charge indication• High temperature disconnect setting• Reserve-time prediction• Recharge current limit•Emergency Power-Off input Integrated Monitoring Inputs/Outputs• System plant voltage (accuracy ±0.5%, resolution 0.01V)• One system shunt (accuracy ± 0.5% full scale, resolution 1A) - Battery or load- Mounted in the return side of DC bus• Up to 15 binary inputs- Six inputs close/open to battery- 9 input close/open to return- User assignable• Up to 7 Form-C output alarms (60VDC @ .5A)- User assignable• 1-Wire™ bus devices- Up to 16 temperature probes (QS873)- Up to 6 mid-string monitors (ES771) Galaxy Manager Compatible• Centralized web server and database with multiple user access to live or managed data with drill down to problem details• Monitor and control of more than 40 connected devices• Management information from polling or alarms received from alarm traps from multiple sites are available on one screen via the inter/ intranet• Trend user selected data over time• Automatic or manual report generation• Standard engineering tools like reserve time calculators and cablevoltage drop analyzerDual Voltage, Modular Power SystemFeaturesInfinity-D may be configured as a +24V or -48V single voltage power system or as a “dual voltage” power system that supports rectifiers and converters. The primary voltage is supported by +24V or -48V rectifiers and battery reserve, while secondary voltage is supported by DC/DC converters. The primary voltage capacity is 1,600A at both 24V and 48V. Secondary voltage capacity is up to 300A per system expansion module.Infinity-D systems may be equipped in 19”, 23” or 26” wide 7ftframeworks, a half height frame for mounting on battery stands, or supplied frameless for field install applications including outside cabinets.• Infinity Rectifiers for +24V and -48V applications. • Modular architecture for easy growth and low cost • DC/DC converter support for dual voltage systems• DC distribution in each system module for efficient scalability • Temperature hardened harsh environments. (-40°C to +75°C) • Compact size: 8” (203mm) high, 16.9” (429mm) deep. • Adjustable frame mounting for 19”, 23” and 26” applications • Battery panel for battery connection and LVBD option.• Plug-N-Play Pulsar Plus controller with Web based interface for local and remote (CO-LAN) access. • Distribution options include 3A-400A bullet style circuit breakers and GMT fusesOrdering Information – Infinity D Power SystemStep 1: Select the Base Power BaysStep 1: Select the Base Power Bays (cont.)Step 1: Select the Base Power Bays (cont.)Step 2: Select Mounting Frame & Battery TraysNote: Small systems above are configured WITHOUT a mounting frame to facilitate use in cabinets or frames. Large systems come pre-mounted in a 7ft relay rack frame. The following frame options are available for the small systems.Ordering Code DescriptionCC8488289387ft high relay rack for mounting 23” wide equipment (Zone 4 to 1800 lbs.)CC8488521867ft high relay rack for mounting 19” wide equipment (Zone 4 to 1800 Lbs.)84875113242” high relay rack for mounting 23” wide equipment on a ½ height battery stand or battery stackStep 3: Select any Power System expansion shelvesStep 4: Select Rectifiers and ConvertersStep 5: Select Alarm CablesStep 6: Select Distribution ComponentsNote: Infinity D shelves each support 10 plug-in (bullet style) breakers or fuse modules. To minimize the cost of surplus material, the cable termination adapters are supplied separately. These are listed below (on top of Page 16) and must be selected and ordered to match the breakers to be installed. On the 5 pole, 400A breaker the adapter is supplied attached to the breaker, so it does not have to be ordered separately.Step 6: Select Distribution Components (cont.)Step 6: Select Distribution Components (cont.)Step 7: Select Battery MonitoringProduct DocumentationH2007001: Ordering GuideA copy of the appropriate installation manuals below ship with each 848845223: Infinity D Installation Manual (+24V Rectifier Systems, -48V Converters)CC848853515: Infinity D Installation Manual (-48V Rectifier Systems, +24V Converters)CC848864834: Infinity D Single Shelf Power Plant Installation Guide (+24V and -48V Systems)CC848862433:Infinity D Stand Alone Converter Plant Installation Guide (+24V to -48V System)Shelf SpecificationsAdditional InformationNotes: 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.................................................................................................................................................................................................................................................................................................................... .................................................................................................................................................................................................................................................................................................................... ....................................................................................................................................................................................................................................................................................................................Management VisibilityGalaxy Manager™ software is the centralized visibility and control component of a comprehensive power management system designed to meet engineering, operations and maintenance needs. The Galaxy Manager client-server architecture enables remote access to system controllers across the power network.• Dashboard display with one-click access to management information database• Trend analysis• Scheduled or on demand reports• Fault, configuration, asset, and performance management TrainingGE Energy offers on-site and classroom training options based on certification curriculum. Technical training can be tailored to individual customer needs. Training enables customers and partners to more effectively manage and support the power infrastructure. We have built our training program on practical learning objectives that are relevant to specific technologies or infrastructure design objectives.Service & SupportGE Energy field service and support personnel are trusted advisors to our customers – always available to answer questions and help with any project, large or small. Our certified professional services team consists of experts in every aspect of power conversion with the resources and experience to handle large turnkey projects along with custom approaches to complex challenges. Proven systems engineering and installation best practices are designed to safely deliver results that exceed our customers’ expectations. WarrantyGE Energy is committed to providing quality products and solutions. We have developed a comprehensive warranty that protects you and provides a simple way to get your products repaired or replaced as soon as possible.For full warranty terms and conditions please go to/powerelectronics.。
(完整版)温度循环与冷热冲击的区别编辑整理:尊敬的读者朋友们:这里是精品文档编辑中心,本文档内容是由我和我的同事精心编辑整理后发布的,发布之前我们对文中内容进行仔细校对,但是难免会有疏漏的地方,但是任然希望((完整版)温度循环与冷热冲击的区别)的内容能够给您的工作和学习带来便利。
同时也真诚的希望收到您的建议和反馈,这将是我们进步的源泉,前进的动力。
本文可编辑可修改,如果觉得对您有帮助请收藏以便随时查阅,最后祝您生活愉快业绩进步,以下为(完整版)温度循环与冷热冲击的区别的全部内容。
(完整版)温度循环与冷热冲击的区别编辑整理:张嬗雒老师尊敬的读者朋友们:这里是精品文档编辑中心,本文档内容是由我和我的同事精心编辑整理后发布到文库,发布之前我们对文中内容进行仔细校对,但是难免会有疏漏的地方,但是我们任然希望(完整版)温度循环与冷热冲击的区别这篇文档能够给您的工作和学习带来便利。
同时我们也真诚的希望收到您的建议和反馈到下面的留言区,这将是我们进步的源泉,前进的动力.本文可编辑可修改,如果觉得对您有帮助请下载收藏以便随时查阅,最后祝您生活愉快业绩进步,以下为 <(完整版)温度循环与冷热冲击的区别〉这篇文档的全部内容.想想他说的有道理, 温冲应该是针对结构性,工艺性的缺陷的测试,而温度变化是把器件缺陷暴露出来,当然材料缺陷也可以发现.实践中,温度变化速度一般为5到10度每分钟,低之变成了高低温试验,高了我们称为快速温变,温度变化呈线性,试验时间一般较长,短时间难以发现产品缺陷温冲一般规定变化时间在5min以内,指温度点到达稳定时耗的时间,温度变化不追求线性,只追求速度,一般过冲较大(我们不是2箱式的,是吹风式的),再有一个证据支持timex观点的是,做高低温循环试验有时候会通电工作,做温冲比较少。
我们实验室是做电子产品的,不知道其他产品的试验方法温度冲击和温度循环可以统称为温度变化试验,IEC称之为change of temperature。
光伏组件老化测试英语Photovoltaic (PV) module ageing testIn order to evaluate the long-term performance and durability of photovoltaic modules, ageing tests are conducted. These tests simulate the effects of different environmental factors on the modules over an extended period of time in a controlled environment, such as accelerated ageing, thermal cycling, humidity, and UV exposure.Accelerated ageing: This test subjects the modules to elevated temperatures and humidity levels, which accelerate the degradation processes. The modules are typically exposed to high temperatures of around 85°C for a prolonged period of time, ranging from several hundred to thousands of hours, depending on the desired test duration.Thermal cycling: This test involves subjecting the modules to rapid temperature fluctuations between extreme hot and cold temperatures. This helps evaluate the modules' ability to withstand the stresses caused by different thermal expansion coefficients of the materials used in their construction.Humidity: This test assesses the modules' resistance to moisture ingress and the subsequent degradation of their electrical performance. The modules are exposed to high humidity conditions for a predetermined period of time, usually several hundred to thousands of hours.UV exposure: Ultraviolet (UV) radiation from the sun can causedegradation of the materials used in PV modules over time. This test evaluates the modules' ability to withstand long-term exposure to UV radiation without significant performance degradation. The modules are typically exposed to high UV levels for several thousand hours.Throughout these ageing tests, various parameters are monitored, such as changes in power output, electrical performance, temperature coefficient, insulation resistance, and visual inspection. These tests help manufacturers assess the durability and reliability of their PV modules and provide valuable data for performance predictions and warranty claims.。
基于液冷的锂离子动力电池散热结构优化设计作者:刘霏霏袁康李骏洪显华龚阳来源:《湖南大学学报·自然科学版》2021年第10期摘要:針对锂离子电池单体成组后温度场的非均匀性导致的热不一致性问题,以及高温下电池单体间的热交互引发的热安全性问题,采用仿真与试验相结合的方式,基于锂离子电池生-传热机理,设计了电池单体单独成组、电池单体之间夹隔泡沫棉、电池模组底部布置液冷板3种递进式散热方案,并对液冷板进行了优化设计. 采用有限元软件STAR-CCM+,仿真分析了3种方案下电池模组在不同放电倍率时的温度分布. 结果表明:增加泡沫棉可减少电池间的热交互,进而提高电池单体间的热均衡性. 在结合泡沫棉、导热板以及优化后(采用液冷管道串-并联组合方式)的液冷系统散热条件下,电池模组以2C倍率放电时最高温度为35.08 ℃,最大温差仅为4.85 ℃. 研究结果可为电池热管理散热系统结构设计提供一定的理论基础.关键词:锂离子电池;液冷;散热;STAR-CCM+;结构优化中图分类号:U469.72 文献标志码:AOptimal Design of Heat Dissipation Structure ofLithium-ion Power Batteries Based on Liquid CoolingLIU Feifei YUAN Kang LI Jun HONG Xianhua GONG Yang(School of Mechatronics and Vehicle Engineering,East China Jiaotong University,Nanchang 330013,China)Abstract:Aiming at solving the thermal inconsistency problem caused by non-uniformity of temperature field after lithium-ion battery cells are grouped,and the thermal safety problem caused by the thermal interaction between the battery cells at high temperature. The combined method with simulation and test is adopted. Three progressive heat dissipation schemes are designed based on the heat generation-transfer mechanism of lithium-ion batteries. including individual battery cells in groups,foam cotton between the battery cells,and liquid cooling plate arranged at the bottom of the battery module respectively. Also the liquid cooling plate is optimized. The finite element software STAR-CCM+ is used to simulate the temperature distribution of the battery modules at different discharge rates for the three schemes. The results show that the increase of foam cotton can reduce the thermal interaction between the batteries,thereby improving the thermal uniformity between the battery cells. Under the heat dissipation condition of the combination with foam cotton,heat conducting plate and optimized(using liquid cooled pipeline series parallel combination) liquid cooling system,the maximum temperature of the battery module is 35.08 ℃ at 2C discharge rate,and the maximum temperature difference is only 4.85 ℃. The research results can provide a theoretical basis for the structure design of cooling system for battery thermal management.Key words:lithium-ion batteries;liquid cooling;heat dissipation;STAR-CCM+;structural optimization纯电动汽车未来是人类的主流交通工具之一,动力电池是其唯一的动力源[1]. 而温度是制约动力电池性能的最关键因素之一,其中最高温度和温度一致性左右着电池寿命和续航里程[2]. 因此,动力电池热管理研究是当下的主要热点之一. 锂离子动力电池理想的工作温度范围在25 ~ 40 ℃,且电芯单体之间温差不宜超过5 ℃[3]. 在电池的充放电过程中,模组本身由于化学反应会产生大量的热,如果热量不及时散出而积累在电芯内,会导致模组内部产生较大的温升及单体电芯的温度一致性较差,并由此会引发一系列后果,轻则影响电池的循环次数,重则导致电池热失控甚至引发火灾[4]. Liu等人[5]的实验研究发现,选取一个锂离子电池,并且使用NCM523作为该电池的正极材料,在53 ℃的环境下做100次循环后发现,该电池的寿命比之正常的减少了52.8%. Guo等人[6]使用磷酸铁锂电池做了相关的实验并且对数据进行了对比发现,在30 ℃、50 ℃的环境下分别做50次的循环,处于50 ℃条件下的电池寿命及容量衰减得更多. 李龙飞[7]研究发现电池成组后以同倍率放电,2C时最高温度比单体放电时高22.68 ℃;电芯温差也达到了9.82 ℃,远高于单体放电时的4.98 ℃. Yuksel等人[8]研究了磷酸铁锂电池的温度环境对寿命及容量的影响发现,采用强制风冷进行冷却散热后,电池的寿命能提升6%左右.根据介质的不同电池热管理可区分为空气冷却、液体冷却、相变材料冷却等[9]. 但随着电池功率性能的要求,单纯的空气冷却已经满足不了高倍率充放电电池系统的散热要求,尽管相变冷却性能良好,但其颇高的成本限制了其在生产中的应用[10]. 因此,对于高充放电率、高产热率的电池组而言,液体冷却具有明显的优势. 邱焕尧[11]设计了一种W形冷却管道,布置在18 650圆形电池的周围,模组以2C倍率放电,最高温度控制在38 ℃,温差控制在5 ℃之下;许时杰[12]设置了一种蛇形液冷管道,布置于方形电池模组的底部位置,模组以2C倍率放电,温度最高为39.2 ℃,温差为4.26 ℃;电池液冷散热研究主要是通过改变电池的排布结构以及液冷管道的结构实现散热优化等,然而对于电池成组后引发的热交互对液冷散热影响的研究尚较缺乏. 针对电池成组后的热不一致性及热安全性问题,设计了一种新的电池散热结构,即在电池单体之间夹隔泡沫棉,隔绝单体之间的热交互,同时当电池在行驶路况时起到一定的减震保护作用,并且在模组底部加入导热垫和液冷板,加快散热速度. 在单体电芯的内阻测试实验及电芯放电温升实验的基础上准确建立了电池的热仿真模型,并进行模组递进式散热设计:方案一采用自然散热、方案二采用在电池单体之间夹隔泡沫棉,方案三采用液冷系统散热并且对液冷散热结构进行了优化设计. 应用STAR-CCM+软件,对电池模组在不同放电倍率下的温度场进行热仿真分析,对比电池的散热效率,得出电池模组的最优散热方案.1 数学模型的建立1.1 锂离子电池产热机理1.2 电芯热物性参数获取1.2.1 电芯导热系数锂离子动力电池的内部组成材料多种多样,每种材料的导热系数都不尽相同,并且其内部材料的排布排列形式也有所差异. 因此锂离子电池的导热系数在各个方向是不同的,即具有各向异性. 本文采用串并联热阻的方式计算电池的导热系数,假设电池的厚度方向为Z方向,宽度方向为X方向,高度方向为Y方向[14].1.2.2 电芯密度1.2.3 电芯比热容计算1.3 锂电池单体生热速率模型及热边界条件建立1.3.1 电池生热速率模型1.3.2 热边界条件1.4 流场与温度场协同原理介绍2 电池内阻的测定及温升实验2.1 电池内阻测试2.2 单体电芯温升实验3 电池建模仿真及验证4 电池模组的建立及仿真分析4.1 方案一自然散热模组设计及热仿真分析方案一采用10个电池单体并联组成1个模组,编号从1至10. 如图6所示. 图7为方案一模组在自然对流条件下2C倍率放电结束时的温度云图. 图8为方案一模组中电池单体在2C放电结束时的最高温度、最低温度和温差数据图.由图7和图8可知,当模组2C放电时,整个模组内部的温度明显高于外壁面与极耳部分. 这是由于在对流的条件下,外壁面和极耳部分能充分的对流散热,而模组内部由于空气流通的限制,产生的热量很难通过对流换热传出,并且电池单体之间产生热交互的作用,随着热量积累导致温度升高. 2C放电时最高温度达到了56.48 ℃,已经超过了电池最合适的温度范围;且模组以2C倍率放电时,单体电池的温差较大,达到了7 ℃以上,此时的单体电池温度一致性较差. 若电池长期处于此温度环境中,则会损伤电池的使用寿命,并且还会带来一定的安全隐患. 故锂离子电池单体不能直接大量成组使用,必须设计合理的散热方案.4.2 方案二单体电池夹隔泡沫棉的模组设计及热仿真分析基于方案一可知电池成组时高温区域主要集中在内部,一部分原因是由于电池放电时产热过多没能及时的散出,另一部分原因在于电池与电池单体之间紧密接触,它们之间发生的热交互作用,因此温度聚集在内部区域. 为此进行模组散热设计的改进. 如图9所示,方案二所使用的是在电芯单体之间夹隔泡沫棉,由于泡沫棉的导热系数很低,这样可以阻止电芯单体之间的热传递,防止热量堆积在一起.由图10和图11可知,电池单体之间夹隔泡沫棉之后,由于泡沫棉的低导热性,使得电池的热量沿平行于泡沫棉方向传导,从而达到热均衡性,模组最大温差为5.32 ℃. 由于单体成组放电,电池产热量大,单纯的自然冷却以及采取热源之间相互隔离的方法显然还是不能将温度控制在合适范围内,仍然处于50 ℃以上的高温条件.4.3 方案三采用液冷系统的模组设计及热仿真分析针对方案二中模组在放电情况下温度仍然較高的问题,本方案采用液冷系统给电池模组进行强制散热,液冷板流道结构及电池模组如图12所示,电池模组下面垫有导热垫,在导热垫下面装有液冷板,液冷板采用铝制,流量进口采用质量流量,设置为2 L/min.图13为方案三模组在2C放电结束时的温度云图、流道压力分布图以及速度矢量图. 根据图13(a)可知,采用了液冷系统进行强制散热后,模组高温问题得到明显的改善. 2C倍率放电时最高温度为38.39 ℃,整个模组的高低温区域较为明显. 单体电池的温差较大,这是因为流道内冷却液的分配不均匀所导致的. 从压力分布图13(b)也可以看出,右边的压力整体都是高于左边的,压降为192 Pa. 速度矢量图13(c)中的速度分布也是右边更加的均匀,左边的流量分配得很少,导致散热协同效果差. 从而造成了模组的温度场差异化较明显,右边温度低左边温度高的现象. 需要优化液冷板的流道结构来改变模组温度分布不均匀,单体电池温差较大这一现象.根据介质的不同电池热管理可区分为空气冷却、液体冷却、相变材料冷却等[9]. 但随着电池功率性能的要求,单纯的空气冷却已经满足不了高倍率充放电电池系统的散热要求,尽管相变冷却性能良好,但其颇高的成本限制了其在生产中的应用[10]. 因此,对于高充放电率、高产热率的电池组而言,液体冷却具有明显的优势. 邱焕尧[11]设计了一种W形冷却管道,布置在18 650圆形电池的周围,模组以2C倍率放电,最高温度控制在38 ℃,温差控制在5 ℃之下;许时杰[12]设置了一种蛇形液冷管道,布置于方形电池模组的底部位置,模组以2C倍率放电,温度最高为39.2 ℃,温差为4.26 ℃;电池液冷散热研究主要是通过改变电池的排布结构以及液冷管道的结构实现散热优化等,然而对于电池成组后引发的热交互对液冷散热影响的研究尚较缺乏. 针对电池成组后的热不一致性及热安全性问题,设计了一种新的电池散热结构,即在电池单体之间夹隔泡沫棉,隔绝单体之间的热交互,同时当电池在行驶路况时起到一定的减震保护作用,并且在模组底部加入导热垫和液冷板,加快散热速度. 在单体电芯的内阻测试实验及电芯放电温升实验的基础上准确建立了电池的热仿真模型,并进行模组递进式散热设计:方案一采用自然散热、方案二采用在电池单体之间夹隔泡沫棉,方案三采用液冷系统散热并且对液冷散热结构进行了优化设计.应用STAR-CCM+软件,对电池模组在不同放电倍率下的温度场进行热仿真分析,对比电池的散热效率,得出电池模组的最优散热方案.1 数学模型的建立1.1 锂离子电池产热机理1.2 电芯热物性参数获取1.2.1 电芯导热系数锂离子动力电池的内部组成材料多种多样,每种材料的导热系数都不尽相同,并且其内部材料的排布排列形式也有所差异. 因此锂离子电池的导热系数在各个方向是不同的,即具有各向异性. 本文采用串并联热阻的方式计算电池的导热系数,假设电池的厚度方向为Z方向,宽度方向为X方向,高度方向为Y方向[14].1.2.2 电芯密度1.2.3 电芯比热容计算1.3 锂电池单体生热速率模型及热边界条件建立1.3.1 电池生热速率模型1.3.2 热边界条件1.4 流场与温度场协同原理介绍2 电池内阻的测定及温升实验2.1 电池内阻测试2.2 单体电芯温升实验3 电池建模仿真及验证4 电池模组的建立及仿真分析4.1 方案一自然散热模组设计及热仿真分析方案一采用10个电池单体并联组成1个模组,编号从1至10. 如图6所示. 图7为方案一模组在自然对流条件下2C倍率放电结束时的温度云图. 图8为方案一模组中电池单体在2C放电结束时的最高温度、最低温度和温差数据图.由图7和图8可知,当模组2C放电时,整个模组内部的温度明显高于外壁面与极耳部分. 这是由于在对流的条件下,外壁面和极耳部分能充分的对流散热,而模组内部由于空气流通的限制,产生的热量很难通过对流换热传出,并且电池单体之间产生热交互的作用,随着热量积累导致温度升高. 2C放电时最高温度达到了56.48 ℃,已经超过了电池最合适的温度范围;且模组以2C倍率放电时,单体电池的温差较大,达到了7 ℃以上,此时的单体电池温度一致性较差. 若电池长期处于此温度环境中,则会损伤电池的使用寿命,并且还会带来一定的安全隐患. 故锂离子电池单体不能直接大量成组使用,必须设计合理的散热方案.4.2 方案二单体电池夹隔泡沫棉的模组设计及热仿真分析基于方案一可知电池成组时高温区域主要集中在内部,一部分原因是由于电池放电时产热过多没能及时的散出,另一部分原因在于电池与电池单体之间紧密接触,它们之间发生的热交互作用,因此温度聚集在内部区域. 为此进行模组散热设计的改进. 如图9所示,方案二所使用的是在电芯单体之间夹隔泡沫棉,由于泡沫棉的导热系数很低,这样可以阻止电芯单体之间的热传递,防止热量堆积在一起.由图10和图11可知,电池单体之间夹隔泡沫棉之后,由于泡沫棉的低导热性,使得电池的热量沿平行于泡沫棉方向传导,从而达到热均衡性,模组最大温差为5.32 ℃. 由于单体成组放电,电池产热量大,单纯的自然冷却以及采取热源之间相互隔离的方法显然还是不能将温度控制在合适范围内,仍然处于50 ℃以上的高温条件.4.3 方案三采用液冷系统的模组设计及热仿真分析针对方案二中模组在放电情况下温度仍然较高的问题,本方案采用液冷系统给电池模组进行强制散热,液冷板流道结构及电池模组如图12所示,电池模组下面垫有导热垫,在导热垫下面装有液冷板,液冷板采用铝制,流量进口采用质量流量,设置为2 L/min.图13为方案三模组在2C放电结束时的温度云图、流道压力分布图以及速度矢量图. 根据图13(a)可知,采用了液冷系统进行强制散热后,模组高温问题得到明显的改善. 2C倍率放电时最高温度为38.39 ℃,整个模组的高低温区域较为明显. 单体电池的温差较大,这是因为流道内冷却液的分配不均匀所导致的. 从压力分布图13(b)也可以看出,右边的压力整体都是高于左邊的,压降为192 Pa. 速度矢量图13(c)中的速度分布也是右边更加的均匀,左边的流量分配得很少,导致散热协同效果差. 从而造成了模组的温度场差异化较明显,右边温度低左边温度高的现象. 需要优化液冷板的流道结构来改变模组温度分布不均匀,单体电池温差较大这一现象.根据介质的不同电池热管理可区分为空气冷却、液体冷却、相变材料冷却等[9]. 但随着电池功率性能的要求,单纯的空气冷却已经满足不了高倍率充放电电池系统的散热要求,尽管相变冷却性能良好,但其颇高的成本限制了其在生产中的应用[10]. 因此,对于高充放电率、高产热率的电池组而言,液体冷却具有明显的优势. 邱焕尧[11]设计了一种W形冷却管道,布置在18 650圆形电池的周围,模组以2C倍率放电,最高温度控制在38 ℃,温差控制在5 ℃之下;许时杰[12]设置了一种蛇形液冷管道,布置于方形电池模组的底部位置,模组以2C倍率放电,温度最高为39.2 ℃,温差为4.26 ℃;电池液冷散热研究主要是通过改变电池的排布结构以及液冷管道的结构实现散热优化等,然而对于电池成组后引发的热交互对液冷散热影响的研究尚较缺乏. 针对电池成组后的热不一致性及热安全性问题,设计了一种新的电池散热结构,即在电池单体之间夹隔泡沫棉,隔绝单体之间的热交互,同时当电池在行驶路况时起到一定的减震保护作用,并且在模组底部加入导热垫和液冷板,加快散热速度. 在单体电芯的内阻测试实验及电芯放电温升实验的基础上准确建立了电池的热仿真模型,并进行模组递进式散热设计:方案一采用自然散热、方案二采用在电池单体之间夹隔泡沫棉,方案三采用液冷系统散热并且对液冷散热结构进行了优化设计. 应用STAR-CCM+软件,对电池模组在不同放电倍率下的温度场进行热仿真分析,对比电池的散热效率,得出电池模组的最优散热方案.1 数学模型的建立1.1 锂离子电池产热机理1.2 电芯热物性参数获取1.2.1 电芯导热系数锂离子动力电池的内部组成材料多种多样,每种材料的导热系数都不尽相同,并且其内部材料的排布排列形式也有所差异. 因此锂离子电池的导热系数在各个方向是不同的,即具有各向异性. 本文采用串并联热阻的方式计算电池的导热系数,假设电池的厚度方向为Z方向,宽度方向为X方向,高度方向为Y方向[14].1.2.2 电芯密度1.2.3 电芯比热容计算1.3 锂电池单体生热速率模型及热边界条件建立1.3.1 电池生热速率模型1.3.2 热边界条件1.4 流场与温度场协同原理介绍2 电池内阻的测定及温升实验2.1 电池内阻测试2.2 单体电芯温升实验3 电池建模仿真及验证4 电池模组的建立及仿真分析4.1 方案一自然散热模组设计及热仿真分析方案一采用10个电池单体并联组成1个模组,编号从1至10. 如图6所示. 图7为方案一模组在自然对流条件下2C倍率放电结束時的温度云图. 图8为方案一模组中电池单体在2C放电结束时的最高温度、最低温度和温差数据图.由图7和图8可知,当模组2C放电时,整个模组内部的温度明显高于外壁面与极耳部分. 这是由于在对流的条件下,外壁面和极耳部分能充分的对流散热,而模组内部由于空气流通的限制,产生的热量很难通过对流换热传出,并且电池单体之间产生热交互的作用,随着热量积累导致温度升高. 2C放电时最高温度达到了56.48 ℃,已经超过了电池最合适的温度范围;且模组以2C倍率放电时,单体电池的温差较大,达到了7 ℃以上,此时的单体电池温度一致性较差. 若电池长期处于此温度环境中,则会损伤电池的使用寿命,并且还会带来一定的安全隐患. 故锂离子电池单体不能直接大量成组使用,必须设计合理的散热方案.4.2 方案二单体电池夹隔泡沫棉的模组设计及热仿真分析基于方案一可知电池成组时高温区域主要集中在内部,一部分原因是由于电池放电时产热过多没能及时的散出,另一部分原因在于电池与电池单体之间紧密接触,它们之间发生的热交互作用,因此温度聚集在内部区域. 为此进行模组散热设计的改进. 如图9所示,方案二所使用的是在电芯单体之间夹隔泡沫棉,由于泡沫棉的导热系数很低,这样可以阻止电芯单体之间的热传递,防止热量堆积在一起.由图10和图11可知,电池单体之间夹隔泡沫棉之后,由于泡沫棉的低导热性,使得电池的热量沿平行于泡沫棉方向传导,从而达到热均衡性,模组最大温差为5.32 ℃. 由于单体成组放电,电池产热量大,单纯的自然冷却以及采取热源之间相互隔离的方法显然还是不能将温度控制在合适范围内,仍然处于50 ℃以上的高温条件.4.3 方案三采用液冷系统的模组设计及热仿真分析针对方案二中模组在放电情况下温度仍然较高的问题,本方案采用液冷系统给电池模组进行强制散热,液冷板流道结构及电池模组如图12所示,电池模组下面垫有导热垫,在导热垫下面装有液冷板,液冷板采用铝制,流量进口采用质量流量,设置为2 L/min.图13为方案三模组在2C放电结束时的温度云图、流道压力分布图以及速度矢量图. 根据图13(a)可知,采用了液冷系统进行强制散热后,模组高温问题得到明显的改善. 2C倍率放电时最高温度为38.39 ℃,整个模组的高低温区域较为明显. 单体电池的温差较大,这是因为流道内冷却液的分配不均匀所导致的. 从压力分布图13(b)也可以看出,右边的压力整体都是高于左边的,压降为192 Pa. 速度矢量图13(c)中的速度分布也是右边更加的均匀,左边的流量分配得很少,导致散热协同效果差. 从而造成了模组的温度场差异化较明显,右边温度低左边温度高的现象. 需要优化液冷板的流道结构来改变模组温度分布不均匀,单体电池温差较大这一现象.。
Rapid generation of thermal-safe test schedulesPaul Rosinger,Bashir Al-Hashimi∗University of Southampton School of Electronics and Computer Science Southampton,SO171BJ,UK{pmr,bmah}@Krishnendu ChakrabartyDept.of Electrical and Computer EngineeringDuke UniversityDurham,NC27708krish@AbstractOverheating has been acknowledged as a ma-jor issue in testing complex SOCs.Several power constrained system-level DFT solutions(power con-strained test scheduling)have recently been proposed to tackle this problem.However,as it will be shown in this paper,imposing a chip-level maximum power constraint doesn’t necessarily avoid local overheating due to the non-uniform distribution of power across the chip.This paper proposes a new approach for dealing with overheating during test,by embedding thermal awareness into test scheduling.The proposed approach facilitates rapid generation of thermal-safer test schedules without requiring time-consuming ther-mal simulations.This is achieved by employing a low-complexity test session thermal model used to guide the test schedule generation algorithm.This approach reduces the chances of a design re-spin due to poten-tial overheating during test.1.IntroductionConsidering power consumption during test is im-portant because recent industrial experience has shown that scan testing in some designs may consume al-most30X of peak power over its normal operation mode[11].A difference of such a magnitude can eas-ily lead to permanent damage to the device under test ∗Thefirst two authors would like to acknowledge the Engineer-ing and Physical Sciences Research Council(EPSRC)for funding this work under grant no.GR/S05557.The authors also wish to thank the anonymous reviewers for their suggestions which helped improve the quality of the paper.due to overheating,or,lead to reliability failures due to electro-migration.Recent research has addressed the problems associ-ated with the excessive power dissipation during test both at core and at system level.Core level solu-tions include improved ATPG algorithms[13],pat-tern ordering methods[3],and scan chain and clock-ing scheme modifications[10].Existing system level solutions consist of various power-constrained test scheduling algorithms[2,6,7,5,4,1,9,8]which limit the concurrency of the core tests based on a chip-level maximum allowable power limit.This paper focuses on system level tackling of overheating during test.P(Ci) = 15W, i = 1..7TS1 = {C2,C3,C4}TS2 = {C5,C6,C7}Tmax(TS1) = 125.5CTmax(TS2) = 67.5CFigure1.Effect of power density variationsonSilicon die hot spots resulted from localised heating occur much faster than chip-wide overheating due to the non-uniform spatial on-die power distribution.Ac-cepting the assumption of non-uniform spatial power distribution,we belive that constraining the maximumchip-level power dissipation is not effective in avoid-ing localised overheating.To demonstrate this,we provide the following motivational example based on a hypothetical system shown in Figure1.This system is a typical example of non-uniform power distribution: cores with different sizes dissipate the same amount of power.In a power constrained test scheduling sce-nario,for a power constraint of45W the two test sessions TS1={C2,C3,C4}and TS2={C5,C6,C7} would be both accepted by the test scheduling algo-rithm.However,thermal simulation results show a large discrepancy in terms of maximum temperature between the two test sessions,125.5°C for TS1vs.67.5°C for TS2.This difference is mainly because the power density(power per unit of area)varies signif-icantly from one core to another.For example,the power density of core C2is4times higher than that of C5.This means that in order to efficiently avoid hot spots without unnecessarily reducing test concurrency, the spatial and temporal non-uniform thermal behav-iour of the chip under test must be addressed directly, i.e.by validating the generated test schedules through thermal simulations.This paper proposes a new ap-proach for dealing with overheating during test,by embedding thermal awareness into test scheduling.To the best of our knowledge,this is thefirst investiga-tion where test session thermal models are employed to guide the test schedule,rather than chip-level power constraints[2,6,7,5,4,1,9,8].2.Proposed Test Session Thermal ModelAccurate thermal simulation can be very time con-suming for complex chips,therefore it is essential to keep the number of test schedule re-generation due to thermal violations to a minimum.In order to achieve this,we propose a low-complexity test session ther-mal model used to guide the test schedule generation. This reduces the amount of accurate thermal simula-tions necessary for obtaining a thermal-safe test sched-ule.The heat generated during a test session by an active core can be transfered away from the core through its lateral neighbourhood and through the heat spreader placed above the silicon die.Limited lateral heat spreading elevates the core temperature as the onlyavailable heat release path remains the vertical one,i.e.through the heat spreader.The basic idea behindthe proposed thermal-aware test schedule generation approach is to maximise the amount of heat which can be dissipated through the lateral neighbourhood of each active core in a test session.The proposed test session thermal model captures at core granular-ity level the main heat transfer paths originating at the cores tested in a given test session.This model is in-spired from the RC-equivalent architecture-level ther-mal model proposed in[12]which exploits the dual-ity between the thermal and electric domains by mod-elling an IC as a network of thermal resistances and thermal capacitances.In the RC thermal model,each core is represented as a node in the RC network and thermal adjacency is modelled with thermal RC pairs connecting the corresponding nodes.To adapt the generic RC-equivalent model proposed in[12]to the specific needs of the thermal-aware test schedule generation,we have made the following modifications:1.Only steady-state temperatures are considered asthey represent upper bounds for the transient ther-mal profiles of individual cores.Therefore,onlythe thermal resistances of the generic RC modelare used.2.The heat transfer between two cores tested con-currently is considered to be negligible,andhence the thermal resistances between corestested in the same test session are removed.Thisis a valid assumption because,the amount of heatexchanged by two adjacent objects depends ontheir temperature difference,and the temperaturedifference between two active cores is less thanthat between an active and passive core.3.The cores which are passive in the test sessionunder consideration,are assumed to be thermallygrounded,i.e.their temperature is equal to theambient temperature andfixed for the entire du-ration of the test session.These modifications of the thermal model simplify the thermal-aware test schedule generation while still pro-ducing effective solutions,as demonstrated by the ex-perimental results reported in Section4.2The following example illustrates the proposed test session thermal model.For the layout configuration shown in Figure2,we assume the test session under consideration consists of the tests for cores2,4and 5.The white arrows show the lateral paths available for moving the heat away from the active cores.Fig-ure3shows the thermal resistive model(modification 1)corresponding to this test session.The thermal re-sistances between the nodes corresponding to active cores are omitted(modification2),while all remaining thermal resistances connect the active core nodes to the thermal ground(modification3).The equivalent test session thermal model shown in Figure4will be used to guide the thermal-aware test schedule generation as follows.A small equivalent thermal resistance asso-ciated with an active core means good heat exchange between the core and the ambient,which predicts a low core temperature during test.On the other hand,a large equivalent thermal resistance associated with an active core means poor heat exchange with the ambi-ent,and therefore signals a potential hot spot during test.245Figure2.Test session example Power dissipation differs from core to core,there-fore,we are introducing the core thermal character-istic(TC)with respect to a given test session TS de-fined as:T C T S(i)=P(i)×R th(i),where P(i)is the average power dissipation for core i and R th(i)is the equivalent thermal resistance associated with core i with respect to TS.TC provides a normalised means for selecting theappropriate core to be added to a testFigure3.Test sessionthermal model of ex-ample in Figure2Figure 4.Equivalent test session thermalmodelsession.This means that a core with a poor heat ex-change configuration(large R th)but low power dis-sipation has comparable chances to be assigned to a test session with a core which would exhibit good heat exchange with the ambient but has higher power dissi-pation.The proposed thermal-aware test scheduling algo-rithm,which will be detailed in the next section,is driven by the test session thermal characteristic(STC), defined as follows:STC(TS)=max Ci∈T S(T C T S(i)×P(i)×W(i)), where W(i)is a weight associated with core i,and 3initially set to1.3.Thermal aware test schedule generationThe pseudocode for the proposed thermal-safe test schedule generationflow is given in Algorithm 1. The inputs to the algorithm are the set of cores(S)of the targeted system,the maximum allowable tempera-ture(TL)and the maximum test session thermal char-acteristic limit(STCL).In thefirst stage(lines1-7),the algorithm verifies if the temperature constraint is not violated by individual cores.For this,a purely sequen-tial test schedule,i.e.only one core per test session,is simulated.If a thermal violation occurs,then it is ei-therfixed by redesigning the test infrastructure of the core,or the temperature limit(TL)is increased.Once all individual temperature violations have been elimi-nated,the algorithm proceeds to the actual test sched-ule generation.New cores are added to an empty test session TS until STC(TS)exceeds the user-specified STCL(lines9-15).Once no more cores can be added to TS,TS is simulated and the maximum temperature for each core in TS is compared with TL(line19).If any thermal violation is detected at this stage,TS is discarded and the weight W of all cores which vio-lated TL is increased.This is done in order to make them less likely to be added to a“busy”test session. If no thermal violation was detected,TS is added to the test schedule.The algorithm continues with a new session(line9)until all cores have been scheduled. 4.Experimental resultsIn order to validate the efficiency of the proposed thermal-aware test scheduling approach,we have per-formed a set of experiments based on the Compaq Al-pha21368floorplan from[12].Thefloorplan consists of15individual cores describes in terms of their size and position within thefloorplan.The test power dis-sipationvalues used for these cores were ranging from 1.5X to8X their power dissipation during normal op-eration.The experiments focus on two categories of results:the length of the generated test session and the simulation effort.By simulation effort we mean the amount of test session time which needs to be simu-lated until a thermal-safe test schedule is reached.In our experiments we have used the HotSpot tool[12]toAlgorithm1Thermal-safe test schedule generationINPUT:S,the core set of the targeted systemTL=max.allowable temperatureSTCL=session thermal characteristic limit OUTPUT:Thermal-safe schedule as a list ofthermal-safe test sessions1FOR EACH C i∈S2simulate(C i)3BCMT(i)=MaxTemp(C i)4IF BCMT(i)≥TL5fix core-level thermal violation OR increase TL 6END IF7END FOR8A={C i|C i∈S}9TS=∅10FOR EACH C i∈A11TS1=TSC i12IF STC(TS1)≤STCL13TS=TS114END IF15END FOR16simulate(TS)17ValidSession=TRUE18FOR EACH C i∈T S19IF MaxTemp(C i)≥TL20W i=W i×1.121ValidSession=FALSE22END IF23END FOR24IF ValidSession25add TS to the test schedule26A=A-TS27END IF28IF A=∅GO TO LINE9;END IF29DONEperform thermal simulations,however other IC ther-mal simulation tools could be used just as well.Figure5shows the effect of the session thermal characteristic limit(STCL)on the length of the gener-ated test schedules and on the required simulation ef-fort for TL={145°C,155°C,165°C}.As can be seen,relaxed(large)STCL values lead to short test sched-ule at the expense of a significant simulation effort.4For example,when TL=145°C,a STCL value of100 leads to a3second test schedule,but required a cumu-lated26seconds of test session time to be simulated until a thermal-safe schedule could be identified.The high simulation effort required is due to a large number of thermal violations(line19in Algorithm1)which lead to additional test session generation iterations.As the STCL becomes tighter(smaller value),we notice an increase in the length of the generated test sched-ules,however the simulation effort involved is much lower compared to the previously discussed case.for very tight constraints(STCL≤30),the simulation ef-fort involved equals the length of the generated test schedule,i.e.a thermal-safe test schedule was identi-fied from thefirst attempt,hence no additional simula-tions due to thermal violations were required.Figure 5also shows that as TL in increased,the test sched-ules get shorter as more test could be assigned to the same test session without violating the thermal con-straint.Also the simulation effort decreases because thermal-safe schedules are easier to generate under a more relaxed thermal constraint.Figure5.Test schedule length and simulationeffort vs.the session thermal characteristiclimitTable1reports a more extensive set of results for TL in the145-185°C range.In addition to the test sched-ule length and simulation effort,the simulated maxi-mum temperature for the entire test session is also re-ported.As it can be seen,the maximum temperature approaches TL especially for very short test schedules, as they make better use of the temperature allowance.For example,when TL=150°C,the maximum temper-ature for a7second test schedule was almost6°C be-low TL,while for a4second test session,the maxi-mum temperature was less than1°C below TL.These results also show that depending on the STCL,for the same TL,reductions up to3.5X in test schedule length can be obtained.Another interesting thing to be noted is the fact that for high TL and low STCL,the sim-ulated maximum temperature can be up to35°C be-low TL.For example,for TL=185,and STCL=30,the maximum temperature corresponding to the6second test stays under145°C.This shows that in these cases, the STCL constraint is much stronger than TL.5.ConclusionsIn this paper we have proposed an approach for test schedule generation guided by a test session ther-mal model.To the best of our knowledge this is thefirst investigation targeting the overheating dur-ing test based on a thermal model of the test session, rather than imposing a chip-level power constraint.We belive a thermal-aware test scheduling approach is more effective than power constrained test schedul-ing approached,because of the known low correla-tion between silicon temperature and power dissipa-tion.As demonstrated by the experimental results, this approach generates thermal-safe schedules,givena maximum temperature limit,while keeping the nec-essary computational effort to a minimum.Moreover, the proposed approach allows exploration of 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