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Circuit Isolation Techniques 071310 Seshan

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共轭聚合物 有机半导体 英文

共轭聚合物 有机半导体 英文

共轭聚合物有机半导体英文英文回答：Conjugated polymers are a class of organic semiconductors that have alternating single and double bonds along their backbone. This unique structure gives conjugated polymers interesting electrical and optical properties, making them promising candidates for use in various electronic applications.Conjugated polymers are typically synthesized via chemical polymerization techniques, such as oxidative coupling or Heck reaction. The resulting polymers are typically soluble in organic solvents and can be processed into thin films using techniques such as spin coating or drop casting.The electrical properties of conjugated polymers are highly dependent on the degree of conjugation, which is the length of the alternating single and double bond sequence.Longer conjugation lengths lead to higher charge carrier mobility and lower bandgap, making the polymer more conductive and semiconducting, respectively.The optical properties of conjugated polymers are also affected by the degree of conjugation. Longer conjugation lengths lead to absorption and emission of light at longer wavelengths, resulting in a red shift in the polymer's absorption and emission spectra.Conjugated polymers have been used in a variety of electronic applications, including organic solar cells, organic light-emitting diodes (OLEDs), and transistors. In organic solar cells, conjugated polymers act as the active layer, absorbing light and generating charge carriers that are then collected by the electrodes. In OLEDs, conjugated polymers are used as the emitting layer, emitting light when an electric current is applied. In transistors, conjugated polymers are used as the semiconductor channel, controlling the flow of current between the source and drain electrodes.Conjugated polymers are a promising class of materials for use in electronic applications due to their unique electrical and optical properties. Further research is needed to improve the performance and stability of conjugated polymers, but they have the potential to revolutionize the field of electronics.中文回答：共轭聚合物是有机半导体的一种，其主链上交替排列着单键和双键。

常用半导体中英对照表(建议收藏)

常用半导体中英对照表(建议收藏)

常用半导体中英对照表（建议收藏）01.常用半导体中英对照表离子注入机 ion implanterLSS理论 Lindhand Scharff and Schiott theory，又称“林汉德-斯卡夫-斯高特理论”。

沟道效应 channeling effect射程分布 range distribution深度分布 depth distribution投影射程 projected range阻止距离 stopping distance阻止本领 stopping power标准阻止截面 standard stopping cross section退火 annealing激活能 activation energy等温退火 isothermal annealing激光退火 laser annealing应力感生缺陷 stress-induced defect择优取向 preferred orientation制版工艺 mask-making technology图形畸变 pattern distortion初缩 first minification精缩 final minification母版 master mask铬版 chromium plate干版 dry plate乳胶版 emulsion plate透明版 see-through plate高分辨率版 high resolution plate, HRP超微粒干版 plate for ultra-microminiaturization掩模 mask掩模对准 mask alignment对准精度 alignment precision光刻胶 photoresist，又称“光致抗蚀剂”。

负性光刻胶 negative photoresist正性光刻胶 positive photoresist无机光刻胶 inorganic resist多层光刻胶 multilevel resist电子束光刻胶 electron beam resistX射线光刻胶 X-ray resist刷洗 scrubbing甩胶 spinning涂胶 photoresist coating后烘 postbaking光刻 photolithographyX射线光刻 X-ray lithography电子束光刻 electron beam lithography离子束光刻 ion beam lithography深紫外光刻 deep-UV lithography光刻机 mask aligner投影光刻机 projection mask aligner曝光 exposure接触式曝光法 contact exposure method接近式曝光法 proximity exposure method光学投影曝光法 optical projection exposure method 电子束曝光系统 electron beam exposure system分步重复系统 step-and-repeat system显影 development线宽 linewidth去胶 stripping of photoresist氧化去胶 removing of photoresist by oxidation等离子［体］去胶 removing of photoresist by plasma刻蚀 etching干法刻蚀 dry etching反应离子刻蚀 reactive ion etching, RIE各向同性刻蚀 isotropic etching各向异性刻蚀 anisotropic etching反应溅射刻蚀 reactive sputter etching离子铣 ion beam milling，又称“离子磨削”。

杨波LLC第五章第一节翻译

杨波LLC第五章第一节翻译

第五章LLC谐振变换器的改进在前一章，我们已经讨论过LLC谐振变换器的特性和设计。

这一章，我们将研究两种改进LLC谐振变换器的方法：磁集成和过载保护。

5.1LLC谐振变换器的磁集成从前面的讨论可知，我们可以根据给定规格设计功率级。

设计参数决定了各个组件的值。

对于这些组件，电力器件和电容从生产商处获得，这反映了当前的额技术水平。

在所有这些组件中，需要电力电子研究员设计和制作的是磁性元器件。

在这一部分，我们将讨论LLC变换的磁设计。

5.1.1分立元件设计法及其存在的问题图5.1给出了LLC谐振变换器中需要设计的磁性元器件，共三个：串联谐振电感Lr，并联谐振电感Lm和T型变压器。

从Lm和T型变压器的结构上看，我们可以将Lm设计为变压器的励磁电感。

所以，实际上，我们只需设计一个谐振电感和一个带励磁电感的变压器。

图5.1LLC谐振变换器的磁构成有几种设计磁器件的方式。

其中一种是利用分立元件，用一个磁芯来设计谐振电感，用另一个磁芯来设计变压器和励磁电感Lm。

这种方法的优点是设计步骤成熟。

接下来，将呈现一种利用分立元件的设计法。

为了将其和后面介绍的磁集成设计法比较，我们会展示其仿真结果。

因为在LLC谐振变换器中，流过谐振电感Lr的是纯对称的交流电流，所以电感和变压器的磁芯采用软铁芯。

图5.2是LLC谐振变换器的分立磁件设计。

两个U型磁芯分别用来设计谐振电感和气隙变压器。

图5.3是磁芯磁感应强度的仿真结果。

每个U型磁芯的有效窗口面积是116.5mm2。

设计结果：n1=12，np：ns：ns=16:4:4，gap1=1.45mm、gap2=0.6mm。

(a)(b)图5.2分立磁件设计的(a)原理图(b)物理结构(a)电感(b)变压器图5.3磁感应强度仿真结果(a)电感(b)变压器图5.3是当输入电压为400V、工作开关频率200kH时各个磁芯的磁感应强度。

如图所示，两个磁芯中的磁感应强度值都十分高。

高磁感应强度的磁芯会导致磁芯损耗。

电子科学与技术专业英语微电子技术分册部分单词

电子科学与技术专业英语微电子技术分册部分单词

缩略词：BJT 双极结型晶体管Bipolar Junction TransistorLED 发光二极管Light Emitting DiodeMOS 金属氧化物半导体场效应晶体管Metal Oxide SemiconductorFET 场效应晶体管Filed Effect Transistorbcc 体心立方Body-centered cubicfcc 面心立方Face-centered cubicSOI Silicon-On-Insulator绝缘层上硅结构CVD Chemical Vapor Deposition化学气相淀积+ plus/positive - negative * minus / negativeX2X square the square root of X3 x cube the cubic root ofX y X to the yth单词：Semiconductor半导体transition 跃迁Conductivit电导率diffusivity piecewise 分段扩散率resistivity 电阻率diffusivity 扩散系数Bipolar transistor 双极型晶体管step junction 突变结Rectifie 整流器metallurgical junction 合金结Photodiode 光电二极管fermi level 费米能级Leakage current 漏电流exponential 指数的Silicon dioxide 二氧化硅dopant 掺杂Lattice 晶格dielectric 电解质dislodge 移出Unit cell 晶胞Facet 晶面bonding 键合phonon 声子Lattice constant 晶格常数tetrahedral 四面体的Diamond lattice 金刚石晶格Level energy 能级Miller indices 弥勒指数acoustic 声学的Hole 空穴lifetime 寿命Permittivity 介电常数continuity equation连续方程Covalent bonding 共价键impurity 杂质Conduct/valence band 导带，价带device 装置，器件Effective density of states 有效态密度magnetic 有磁性的Intrinsic 本征的illumination 照明silicon ，gallium，germanium，gallium arsenideExtrinsic 非本征的reciprocal 倒数，相反的Carrier 载流子agitation 激动，搅拌Bandgap 能带间隙incremental 增加的Mass action law 质量作用定律excitation 激发Donor acceptor 施主受主Injection 注入collision 冲突，抵触impact ionization 碰撞电离superimposed 叠加sufficient 充分的Scatter 散射Drift 漂移succession 连续的drift velocity 漂移速度Mean free time /path 平均自由时间/程Mobility 迁移率saturation 饱和Recombination 复合spatial 空间overwhelm vt.压倒；淹没；受打击Decay 衰减Abrupt 突变derivative 衍生物bias 偏见gradient 梯度；magnitude 量级Direct Recombination 直接复合Photoconductivity 光电导potential barrier [物] 势垒；[电子] 位垒;voltmeter 电压计quantitative 定量的amplification 放大（率steady state 恒稳态;transient state 瞬态；过渡状态; qualitative .定性的rectification n. [电] 整流equilibrium condition 平衡态endeavor 努力conceive 设想；考虑; postulate.假定unfolding 演变; Prime n. 初期；Primitive 原始的，简单的，粗糙的; artistic adj. 艺术的；supervisor n. 监督人，管理人；检查员;Instinct n. 本能，直觉analog n.模拟；类似物analytical adj. 分析的genuine adj. 真实的，真正的inferior n. 下级；次品acronym n. 首字母缩略词; insofar as 在…的范围内；到…程度; embodiment n. 体现；化身；具体化;proliferate vi. 增殖；扩散；激增vt.使激增;constantly adv. 不断地；时常地; complementary adj. 补足的，补充的; dissipation n. 浪费；消散；[物] 损耗; vehicle n. [车辆] 车辆；工具；交通工具；传播媒介Parallelepiped n. 平行六面体; metallurgical adj. 冶金的；冶金学的; Pedestal n. 基架，基座；analogous adj. 类似的；可比拟的; Ambiguity n. 含糊；不明确；retain vt.保持；雇；记住; Resemblance n. 相似；相似之处prototypical adj. 原型的；典型的; Parasitic adj. 寄生的（等于parasitical）;Vestigial adj. 退化的；残余的；发育不全的;parallel n. 平行线平行的Grooves n. 细槽，凹槽simultaneously同时发生地remnant n. 剩余adj. 剩余的;Mount n. 山峰；底座；Acknowledge 承认; disturbance 干扰; inevitable 不可避免的;inherent 固有的; subsume 把。

半导体器件物理与工艺英文版（施敏著）苏州大学出版社课后答案

半导体器件物理与工艺英文版（施敏著）苏州大学出版社课后答案

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001 (ISSCC tutorial)Noise Analysis in Switched-Capacitor Circuits

001 (ISSCC tutorial)Noise Analysis in Switched-Capacitor Circuits
PSD(f) f
© 2011 IEEE
IEEE International Solid-State Circuits Conference
© 2011 IEEE
Thermal Noise Power
• Nyquist showed that
PSD ( f ) = 4kT
• The total average noise power of a resistor in a certain frequency band is therefore
– Examples: Audio systems, wireless transceivers, sensor interfaces
• Electronic noise directly trades with power dissipation and speed • Electronic noise is a major concern in modern technologies with reduced VDD
• The noise of a MOSFET operating in the triode region is approximately equal to that of a resistor • In the saturation region, the thermal noise can be modeled using a drain current source with power spectral density
• We can model the noise using an equivalent voltage or current generator
2 vn
= Pn ⋅ R = 4kT ⋅ R ⋅ Δf

ISOLATION CIRCUIT

ISOLATION CIRCUIT

专利名称：ISOLATION CIRCUIT 发明人：TAKAO NOBUTAKA 申请号：JP7624489申请日：19890328公开号：JPH02253707A公开日：19901012专利内容由知识产权出版社提供摘要：PURPOSE:To turn on and off a high frequency signal without fail by providing a cascode amplifier to the signal line of the high frequency signal to be turned on and off and controlling the bias voltage of the cascode amplifier. CONSTITUTION:When a switch SW is turned on, a transistor Q1 is normally biased and transistors Q1 and Q2 are operated as a operated as a cascode amplifier 20. Accordingly, an FM signal from a VCO 1 is amplified by the amplifier 20 and taken out of the collector of the transistor Q2. Further, power amplification is executed to the signal and afterwards, the signal is supplied through a filter 4 to an antenna 5 and transmitted to a base station. On the other hand, when the switch SW is turned off, since an interval between the base and collector of the transistor Q1 is reversely biased through the transistor Q2 and turned off, the signal Sf from the VCO 1 is blocked by the transistor Q1.申请人：SONY CORP更多信息请下载全文后查看。

EL4034 4通道模拟输出终端说明书

EL4034 4通道模拟输出终端说明书

Run LED3 Run LED1 Output 10 V Output 30 V EL4034 | 4-channel analog output terminal -10…+10 V, 12b it T he EL4034 analog output terminal generates signals in the range between -10 and +10 V. The voltage is supplied to the process level with a resolution of 12 bits and is electrically isolated. The output channels of the EtherCAT Terminal have a common ground potential. The EL4034 has four channels. Theo utput stages are powered by the 24 V supply. The signal state of the EtherCAT Terminal is indicated by light emitting diodes.EL4034 | ES4034Connection technology2-wire, single-ended Number of outputs4Power supply24 V DC via power contacts Signal voltage-10…+10 V Distributed clocksyes Distributed clock precision<< 1 µs Load> 5 k Ω (short-circuit-proof)Output error< 0.1 % (relative to end value)Resolution12 bit Electrical isolation500 V (E-bus/signal voltage)Conversion time~ 250 µs Current consumption power contactstyp. 25 mA Current consumption E-bustyp. 140 mA Bit width in the process image4 x 16 bit AO output Special featuresOptional watchdog: user-specific output value with ramp; user synchronisation can be activated.Weightapprox. 85 g Operating/storage temperature-25…+60 °C/-40…+85 °C Relative humidity95 %, no condensation Vibration/shock resistanceconforms to EN 60068-2-6/EN 60068-2-27EMC immunity/emissionconforms to EN 61000-6-2/EN 61000-6-4Protect. class/installation pos.IP 20/variable Pluggable wiringfor all ESxxxx terminals Approvals CE, UL, ExRun LED4Run LED2Power contact +24 VPower contact 0 V Output 20 V Output 40 VTop view Contact assemblyEL4034BECKHOFF New Automation Technology We reserve the right to make technical changes.。

半导体器件原理简明教程习题答案Word版

半导体器件原理简明教程习题答案Word版

半导体器件原理简明教程习题答案傅兴华1.1 简述单晶、多晶、非晶体材料结构的基本特点.解 整块固体材料中原子或分子的排列呈现严格一致周期性的称为单晶材料;原子或分子的排列只在小范围呈现周期性而在大范围不具备周期性的是多晶材料; 原子或分子没有任何周期性的是非晶体材料.1.6 什么是有效质量，根据E(k)平面上的的能带图定性判断硅鍺和砷化镓导带电子的迁移率的相对大小.解 有效质量指的是对加速度的阻力.kE h m k ∂∂=21*1 由能带图可知,Ge 与Si 为间接带隙半导体,Si 的Eg 比Ge 的Rg 大，所以Ge μ>Si μ.GaAs 为直接带隙半导体,它的跃迁不与晶格交换能量,所以相对来说GaAs μ>Ge μ>Si μ.1.10 假定两种半导体除禁带宽度以外的其他性质相同,材料1的禁带宽度为1.1eV,材料2的禁带宽度为3.0eV,计算两种半导体材料的本征载流子浓度比值,哪一种半导体材料更适合制作高温环境下工作的器件?解 本征载流子浓度:)exp()(1082.4215Tdp dn i k Eg m m m n ⨯= 两种半导体除禁带以外的其他性质相同∴)9.1exp()exp()exp(0.31.121Tk k k n n T T ==-- T k 9.1>0 ∴21n n > ∴在高温环境下2n 更合适 1.11 在300K 下硅中电子浓度330102-⨯=cm n ,计算硅中空穴浓度0p ,画出半导体能带图,判断该半导体是n 型还是p 型半导体.解 317321002020010125.1102)105.1(p -⨯=⨯⨯==→=cm n n n p n i i ∴>00n p 是p 型半导体 1.16 硅中受主杂质浓度为31710-cm ,计算在300K 下的载流子浓度0n 和0p ,计算费米能级相对于本征费米能级的位置,画出能带图.解 317010-==cm N p A 200i n p n = T=300K →310105.1-⨯=cm n i330201025.2-⨯==∴cm p nn i 00n p > ∴该半导体是p 型半导体)105.110ln(0259.0)ln(10170⨯⨯==-i FPi n p KT E E1.27 砷化镓中施主杂质浓度为31610-cm ，分别计算T=300K 、400K 的电阻率和电导率。

数字集成电路设计_笔记归纳之欧阳术创编

数字集成电路设计_笔记归纳之欧阳术创编

第三章、器件一、超深亚微米工艺条件下MOS 管主要二阶效应：1、速度饱和效应：主要出现在短沟道NMOS 管，PMOS 速度饱和效应不显著。

主要原因是TH GS V V -太大。

在沟道电场强度不高时载流子速度正比于电场强度（μξν=），即载流子迁移率是常数。

但在电场强度很高时载流子的速度将由于散射效应而趋于饱和，不再随电场强度的增加而线性增加。

此时近似表达式为：μξυ=（c ξξ<），c sat μξυυ==（c ξξ≥），出现饱和速度时的漏源电压DSAT V 是一个常数。

线性区的电流公式不变，但一旦达到DSAT V ，电流即可饱和，此时DS I 与GS V 成线性关系（不再是低压时的平方关系）。

2、Latch-up 效应：由于单阱工艺的NPNP 结构，可能会出现VDD 到VSS 的短路大电流。

正反馈机制：PNP 微正向导通，射集电流反馈入NPN 的基极，电流放大后又反馈到PNP 的基极，再次放大加剧导通。

克服的方法：1、减少阱/衬底的寄生电阻，从而减少馈入基极的电流，于是削弱了正反馈。

2、保护环。

3、短沟道效应：在沟道较长时，沟道耗尽区主要来自MOS 场效应，而当沟道较短时，漏衬结（反偏）、源衬结的耗尽区将不可忽略，即栅下的一部分区域已被耗尽，只需要一个较小的阈值电压就足以引起强反型。

所以短沟时VT随L的减小而减小。

此外，提高漏源电压可以得到类似的效应，短沟时VT随VDS 增加而减小，因为这增加了反偏漏衬结耗尽区的宽度。

这一效应被称为漏端感应源端势垒降低。

4、漏端感应源端势垒降低（DIBL）：VDS增加会使源端势垒下降，沟道长度缩短会使源端势垒下降。

VDS很大时反偏漏衬结击穿，漏源穿通，将不受栅压控制。

5、亚阈值效应（弱反型导通）：当电压低于阈值电压时MOS 管已部分导通。

不存在导电沟道时源（n+）体（p）漏（n+）三端实际上形成了一个寄生的双极性晶体管。

一般希望该效应越小越好，尤其在依靠电荷在电容上存储的动态电路，因为其工作会受亚阈值漏电的严重影响。

基于光子学方法的负系数微波带通滤波器

基于光子学方法的负系数微波带通滤波器

基于光子学方法的负系数微波带通滤波器
胡勇;孙军强
【期刊名称】《激光技术》
【年(卷),期】2008(032)002
【摘要】光通信中,为了实现具有负系数特性的基于光子学方法的微波滤波器,采用了一种基于位相调制到强度调制转换的新颖而简单的方法.一个系数可转化的双抽头负系数全光微波带通滤波器得到了验证.结果表明,该滤波器不仅实现了负系数,其各项特性也得到了改善.
【总页数】4页(P143-146)
【作者】胡勇;孙军强
【作者单位】华中科技大学,光电子科学与工程学院,武汉,430074;华中科技大学,光电子科学与工程学院,武汉,430074
【正文语种】中文
【中图分类】TN929.11
【相关文献】
1.基于微波光子学的高功率微波测量 [J], 李义民;邢建泉;王兰
2.耦合系数法设计微波带通滤波器及CAD实现 [J], 王清芬;马延爽
3.基于微波光子学的倍频三角波生成方法 [J],
4.基于微波光子学的射频制导半实物仿真方法研究 [J], 潘时龙; 田义; 刘世锋; 李小琳
5.新型负系数微波光子带通滤波器设计 [J], 程瑞学;梁晓东;王旭;王芳
因版权原因，仅展示原文概要，查看原文内容请购买。

束调管——精选推荐

束调管——精选推荐

束调管1937年，美国物理学家R.H.瓦里安和S.F.瓦里安制出双腔速调管振荡器。

反射速调管则是1940年由苏联工程师Н.Д.捷瓦科维、Е.Н.丹尼尔捷维、И.В.布斯库诺维和В.Ф.柯瓦连科分别研制成功的。

按照电子行进的轨迹，速调管分为直射速调管和反射速调管两类，通常将直射速调管简称为速调管。

直射速调管直射速调管在结构上包括以下几部分:电子枪、谐振腔、调揩系统、各腔之间的漂移管、能量耦合器、收集极和聚焦系统。

具有两个谐振腔的速调管称为双腔速调管;具有两个以上谐振腔者称为多腔速调管。

双腔速调管(图1a)仅有两个谐振腔，即输入腔和输出腔。

由电子枪产生的电子注首先到达输入腔隙缝。

输入的微波信号经能量耦合器送进输入腔,在谐振腔隙缝外形成微波信号电压。

在这里,电子注受到微波场的速度调制，然后进入无场漂移管。

在漂移过程中电子发生群聚，在电子注内形成密度调制。

密度调制的电子注与输出腔隙缝的微波场进行能量交换，电子把能量交给微波场，完成放大或振荡的功能。

微波功率经能量耦合器送至负载。

双腔速调管增益仅为10分贝左右。

为了提高增益，可以在输入腔与输出腔之间设置一个或多个中间腔，构成级联放大器。

这种速调管称为多腔速调管(图1b)。

引入中间腔还可以提高效率;若使各腔频率略有差异，还可展宽频带。

多腔速调管的特点是增益高、效率高、稳定性好、输出功率大，缺点是频带窄。

多腔速调管的稳定增益可达80分贝，效率最高可达75%，脉冲功率可达60兆瓦,连续波功率可达1兆瓦。

频带一般仅有1%~2%，个别大功率脉冲速调管可达10%~12%。

电子群聚电子从阴极发射出现以后受到高电压的加速，到达输入腔隙疑时所有电子的速度是一致的。

待放大的微波信号进入输入腔，在隙缝上建立起微波信号电压。

隙缝上的电压随时间呈正弦变化。

在不同时刻到达隙缝的电子,受到不同的瞬时电压的作用(图2)。

t=tC时，隙缝电压Us等于零,在这一时刻穿越隙缝的电子既未受到加速也未受于减速，仍以原来速度继续向前运动。

调制谱和开关谱问题解决方法

调制谱和开关谱问题解决方法

调制和开关谱的问题，有下面的途径可以解决：１.检查２６ＭＨｚ的晶体，有没有贴反有没有来料不良，如果它有问题，那输出的ＩＱ信号就有问题，后面的指标就不用说了（一般它的ｌａｙｏｕｔ走线应该都没有什么问题的）。

２.查ｌａｙｏｕｔ的ＩＱ四路信号，看有没有其它的控制信号正好穿过他们，一般的都做了保护，应该来说这个的可能性不大。

３.ＴＲＡＮＳＣＥＩＶＥＲ本生的来料不良，或者与ＶＣＯ、ＳＹＳ、ＴＣＸＯ的电源退耦，有没有做好。

到TRANSCEIVER的匹配，这个不调试好的话，到PA输入端的功率就会偏大（经验认为是这样的），这样对测试调制谱和开关谱都不利。

本身物料的问题，一般调试ＰＡＶＢＡＴ的退耦电容会对相位误差帮助大点，但是万事无绝对，调制谱虽然理论上只与ＴＲＡＮＳＣＥＩＶＥＲ和它自身退耦电容、以及晶体有关，但是PA是进一步放大功率，难保非线性调制会产生的寄生分量会有很大的余量。

的输出匹配，这里调试虽然只和功率和电流有关，但是对调制铺、相位误差、开关谱都会有些影响，但不是主要的影响。

7.天线开关是集成的，还是独立的天线开关的隔离度不够，会串回TRANSCEIVER，进而影响到收发机的VCO。

8.屏蔽罩的影响，你可以试着拿下TRANSCEIVER的屏蔽罩后，看一下你所测试的指标是不是会有好转，有的话，想想怎么去改屏蔽框和屏蔽罩，改变腔体谐振频率。

9.如果是开关谱的问题，一般调试RAMP PROFILE就差不多了或者ＶＲＡＭＰ的那个低通滤波器的电容，往哪个方向改，自己试一试。

[10.软件的问题，修改L1D_CUSTOM_RF的参数修改哪个参数呢哪个射频配置文件里面有很多参数，其实我们一般改PT1和PT2，有时候PR1和PR2也要改，但是往哪个方向改呢呵呵，这个就看调试的经验了，一般做射频驱动的对哪些参数会了解的很清楚，我们做MTK的硬件级工程师，可能就没有了解那么多了，因为我们只关注功能。

最简单的流程是这样的：1.自己调试PA到ＴＲＡＮＳＣＥＩＶＥＲ的匹配和更换一个好板子上的晶体。

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Circuit Isolation Techniques & TI Isolator TechnologyNeel Seshan Product Marketing Engineer Industrial InterfaceTopicsWhat is Isolation – General information Some Applications Using Isolation Digital Isolation Techniques and Comparison Isolation Terminology & Standards TI Isolation Products Roadmap (for reference)What is Isolation ?Galvanic isolation:Although Circuit 1 and Circuit 2 exchange signals, no current (electrons) pass from Circuit 1 to Circuit 2.Why is isolation required in electrical systems:Break ground loops Reduce common mode noise Safety from high voltagesVoltage supply 1SignalsVoltage supply 2Circuit 1Circuit 2Ground 1Ground 2Isolation Benefits1) Electrical Installation can cause large GPDs (ground potential difference) between two remote nodes. A direct ground connection between the nodes closes the ground loop. Noise sources (i.e. electric motors) inducing large currents into the ground modulate the ground loop current. This ground noise then appears in the signal path. 1) An isolator breaks the ground loop, thus removing signal path noise. The GPD yet still exists and the isolator must be robust enough to withstand the large voltage differences. 2)3)4)2)Why Isolate??Data CAN SN65HVD233 CAN120 Ω120 Ω SN65HVD233Group loop isolationTMP101 SensorISOISO7221CISOISO7221CNoise isolationADS1255 24-Bit OPA333DSPTMS 320 F2810 DSP with CAN ControllerDSPISO7241A LVC2G06 ISO ISO Fan 120V Amp SN75477 Amp AmpISOBlock High VoltageMotor 480VISO721ISO7220MApplications utilizing IsolationIndustrial: • Robotics • PLC input/output isolation • Industrial networks • Motor control • Power suppliesPrimary Task: Isolation between High-Power and Control Signals Isolation of Bus-Nodes to prevent Corruption of the complete Bus & Common Mode RejectionApplications utilizing IsolationMedical: • Microwave therapy • Patient monitoring • Electrocardiographs • Defibrillators Communications: • PBX (Private Branch Exchange) and central office Primary Task: • Telephone terminal equipment Medical: Isolation between Power and Patient • Telephone switching equipment • Modems Communications: Isolation between Power and Caller • ISDN Isolation of Bus-Nodes to prevent • Ethernet / PoECorruption of the complete BusApplications utilizing IsolationConsumer Electronics: • Video (TV, VCR, etc.) • Plasma displays • Electronic gaming • Home appliancesPrimary Task: Isolation between High-Power and UserComputers & Office Equipment • Isolated I/O • Printers and plotters • Fax machinesKey methods of IsolationEwald Georg von Kleist invented the first recorded capacitor 1745Michael Faraday demonstrated the transformer principle in 1831 Zarlink Invented the opto-coupler (1968)Others…Sound, RF, light, Mechanical, etcIsolation Techniques (It’s all capacitive)Source: TI App note SLLA198/iso721(Click on above link for web info)CapacitiveInductiveGMROpticalCapacitive ISO72XInductive ADuM1xxGMR IL7xOptical HCPL-07xxCIOIsolation Dielectric1 pFSiO1 pFPolyimide1.1 pFPolyimide0.6 pFMold compound• All isolated couplers are capacitive coupled (active or parasitic) •CIO for any type is comparableDielectric Materials Used for Isolation• SiO2: ISO72x Typical BV is 1000 Vpeak/um Inorganic Highly Stable (over temperature, moisture, time), high quality Used extensively and for long time as dielectric in semiconductor (low defect rates) Deposited in a controlled semiconductor process Polyimide: ADI Transformer core Typical BV is 250 Vpeak/um Organic Retains moisture – affects lifetime especially at high voltages Used in semiconductor mainly for stress relief & now as isolation barrier Epoxy: Opto-couplers: Typical BV is 50 Vpeak/um Uses filler materials Leaky (higher partial discharge) Applied at packaging as mold compound Voids and anomalies are common••Internal ConstructionOptical: Isolation functionality added at package levelISO72x: Integrated at process levelADuM1100: Integrated at process levelHow are they constructed?Transmit - Chip HV-CapReceiver - ChipHigh Voltage Capacitor DetailMold compoundTop plate = AlBond wireThe change from copper to aluminum as new top plate material simplifies production and assures stable product delivery.Inter Level Dielectric (Tons of SiO2)Min 8µmBottom Plate = Silicon Substrate (doped)How do they work?The LF channel assures correct output signal polarity during loss of input signal (i.e. wire-break) HF and LF channels use differential signaling for high noise immunityHigh-Frequency Channelfor a 50:50 duty cycleCLOCK TRANSFER(Duty Cycle = 50:50)A (IN’) A BBC C D DLow-Frequency ChannelBetween A and D, the LF-channel works in the same way the HF channel does. The only differences are the pulse-width modulation at the beginning and the demodulation at the end.Terminology• Working or Operating Voltage (Vpk): Voltage that may be applied continuously across the Isolation barrier, mostly 560Vpk or 890Vpk • Isolation or Transient Voltage (Vrms): Voltage that may occur temporarily across the barrier (tested per VDE for 1 minute), mostly 4kVpk (relates to 3kVrms per UL, as tested for 10s only) or 6kVpk • Basic or Functional Isolation: - assumes a single level of isolation of certain strength - is applicable for most industrial applications and AC-equipment ≤ 400Vrms, and for consumer electronics. - is mostly rated at 560Vpk continuous, 4kVpk transient voltage. Reinforced Isolation: - assumes a single level of isolation providing the same reliability as a two-layer isolation. - is applicable for most medical applications and AC-equipment > 400Vrms. - is mostly rated at 890Vpk continuous, 6kVpk transient,10kV surge voltage. Medical needs 5kVrms transient. Common Mode Transient Immunity: CMTI discusses the quick change in Reference potential primary to secondary. It’s given as the dV/dt up to which no false toggling of the output will occur (e.g. 35kV/us). Usually scales ~ linearly with Vcc. Creepage and Clearance discusses the surface-distance that may conduct if wet/polluted, respectively the air-distance. For 560V/4kV mostly 5mm is sufficient, for 890V/6kV mostly 8mm is needed. Depends on pollution degree•••CMTICommon-Mode Transient EventSignals referenced to GND2GND1 GND2±∆ V 1 relative ground 2. CMTI – The change in groundMeasured in kV / μSec.Creepage and ClearanceCreepage distance: Shortest distance between two conductive leads, across isolation barrier, measured along surface of insulation. Clearance distance: Shortest distance between two conductive leads , across isolation barrier, measured through air (line of sight).Package/ designationCreepage mmClearance mmNarrow body SOIC/ D Gull wing / DUB Wide body SOIC/ DW4.3 6.8 8.14.8 6.1 8.34How reliable are they?Opto Signaling Rate (Mbps) Propagation Delay Time (ns) Pulse Width Distortion (ns) Channel-to-Channel skew (ns) Part-to-Part Skew (ns) ESD on all Pins (kV) CM Transient Immunity (kV/us) Temperature (oC) MTTF @ 125oC, 90% Confidence (yrs) FIT@ 125oC, 90% Confidence Magnetic Immunity @ 1 kHz (Wb/m2) Radiated Electromagnetic-Field Immunity IEC61000-4-3 (80MHz-1000MHz) MIL-STD 461E RS103 (30MHz-1000MHz) High-Voltage Lifetime Expectancy (yrs) 50 20 2 16 20 ±2 20 -45..125 8 14391 <5 Magnetic 150 32 2 2.0 10 ±2 25 -40..125 1746 65 102 Fails Fails < 10 Capacitive 150 12 1.5 1.6 2 ±4 25 -55..125 2255 50 108 Complies Complies > 28Competitive Comparison Magnetic ImmunityMagneticISO7221C1Mbps: Comparison of Radiated Noise Spectrum –Antenna HorizontalMagnetic: 1Mbps operation @ 5V VccISO7221: 1Mbps operation @ 5V Vcc25Mbps: Comparison of Radiated Noise Spectrum –Antenna HorizontalMagnetic: 25Mbps operation @ 5V VccISO7221: 25Mbps operation @ 5V VccHigh Voltage Lifetime –TDDB (time dependent dielectric breakdown)Competitive Comparison High Voltage LifetimeUsing widely accepted E-Model methodology1.E-051.E-041.E-031.E-021.E-011.E+001.E+011.E+021.E+031.E+0404008001200160020002400280032003600400044004800VrmsT i m e t o f a i l Y e a r sADUM1100ISO72xISO72x: Life expectancy is 28 years at 560Vpeak or 400VrmsCompetition: Life expectancy < 10 yearsHigh Voltage Lifetime: Temperature and Voltage Effect28201511594331230102*********705006007008009001000Vpeak (Working Voltage)L i f e t i m e i n Y e a r sTj = 150C Tj = 100C Tj = 85CDigital Interface Isolation PortfolioSingle Dual TripleQuad FunctionsISO721/2M ISO722xM ISO723xM ISO721/2ISO723xCISO723xA ISO150Bi-directionalAMC1203Delta-SigmaISO724xMISO724xCCF out selectISO724xAX = # back channelsX = # back channelsX = # back channelsISO722xB IsolatedPROFIBUSIsolated5V RS485Isolated3V RS485ISO10505V CANIsolated5/3V RS485w/TransISO742xIsolatedGate DriversISO722xC ISO722xAISO752xCSingle Channel Signal Isolators:ISO72x•4000Vpeak Isolation•560Vpeak continuous •Signaling Rate Options (ISO721B: 5Mbps, ISO721: 100Mbps, ISO721M: 150 Mbps)•UL 1577, IEC 60747-5-2 (VDE 0884, Rev. 2), IEC 61010-1 and CSA Approved • 3.3V/5V Operation (any combination)•25 kV/µs Transient Immunity and High Electromagnetic Immunity•Failsafe Output and High Impedance at Input and Output with Low VccDuals150MbpsTriplesx xx xx designates speed option: A = 1Mbps; C = 25Mbps; M = 150MbpsAll in DW packageQuad-channelx x x x designates speed option: A = 1Mbps; C = 25Mbps; M = 150MbpsAll in DW packageISO308x, ISO1x, ISO3x “Standard RS-485”• 3.3V and 5V•half-duplex and full-duplex(‘176 and ‘180 configuration)•1Mbps and25Mbps•no ISODE outputISO1176 : Isolated RS/485 ProfiBus •5V•half-duplex•25Mbps•optimized for Profibus-Applications •ISODE availableISO1050•5V CAN transceiver•ISO11898 compliant• 3.3V/5V isolated logic interface •High EM Immunity•15kV/us transient immunity•Bus fault protection of -27V to 40V •Dominant timeout function •Thermal Shutdown protection •High Input impedance with low Vcc •1MbpsISO RS-485 with Transformer Driver•Integrated transformer driver•Meets or Exceeds TIA/EIA RS-485•Bus-Pin ESD Protection 16kV GND2 & 6kV GND1•1Mbps / 20Mbps / 40Mbps•1/8 Unit load –256 nodes on a bus•Glitch-Free & Failsafe (Open, Shorted, Idle)•Silicon Integrated SiO 2Insulator•4kVpk / 2500Vrms Isolation, 560V Working -UL1577, IEC 60747-5-2 (VDE 0884, rev. 2) ,IEC 61010-1 & CSA pending•Energy Meter Networks •Power Inverters•Industrial Automation•Building Automation Networks •Motor Control •HVAC•Ease of isolated power design•Fully compliant to RS-485 Standard •High Reliability in Harsh Environments •Optimized for Long Cables Or High Speed •Large buses•Hot pluggable & Protected in all situations •Proven Reliability of SiO 2Insulation, Stable over Time, Temperature & Moisture -Life Span > 25 years @ 125o CEVM –ISO1176TEVM / ISO35TEVM / ISO3086TEVMRTM 3Q1020Mbps1Mbps 40Mbps Speed 5V RS4853V RS485Profibus Function SOIC-16 (DW)Full ISO35T SOIC-16 (DW)Half ISO1176T FullDuplex SOIC-16 (DW)ISO3086TPackage Part #ISO55xx FamilyIGBT Drivers with integrated safety features and adjustability•Silicon Integrated SiO2 Dielectric Capacitor •DESAT protection -fault feedback, soft turn off, UVLO•Adjustable DESAT level & blanking time, soft turn off option, UVLO options•200ns typ prop delay, 20ns typ pulse skew •4KV ESD on All Pins•3V and 5V Vcc1 Supported•5000Vrms Max/ 1200V working voltage -Wide SOIC Packages-UL1577, IEC 60747-5-2IEC 61010-1 & CSA pending•Industrial Motor Control•Industrial Power Supplies/ Inverters•HEV & EV power modules •Proven Reliability of SiO2Dielectric,-Life Span> 25 years•Improved safety & system performance •Unique fine tuning ability without discretes •Enabling low power application•High Immunity for Noisy Environments •High Reliability in Harsh Environments •Flexibility with Power Supplies•Certified by all 3 World Wide agenciesEVM ISO EVM -ISO55XX tbd ISO5513ISO5512ISO5511ISO5510ISO5501ISO5500Part #DESAT adjust, Blanking time adjust, UVLO = 9VDESAT adjust, Blanking time adjust, UVLO = 14VDESAT adjust, Soft turn off option, UVLO = 9VDESAT adjust, Soft turn off option, UVLO = 14VSeparate P and N channel outputs for slope controlP2P compatible with HCPL316JFeaturesWide SOIC-16 10V to 30VWide SOIC-16 15V to 30VWide SOIC-16 15V to 30VWide SOIC-16 15V to 30VWide SOIC-16 15V to 30VWide SOIC-16 10V to 30VPackage Voltage RangeRTM4Q10SamplesnowMotor Control reference designPLC reference designIsolated CAN reference designTI Makes Isolators Easy to UseGet Started TodayEvaluation modulesSamplesApplications supportIBIS modelsData sheetsTechnical documentationApplication notes on:High-Voltage LifetimeMagnetic Field ImmunityISO72x Family of DigitalIsolatorsComplements TI’s industrialproduct portfolio: interface,data converter, DSP, MCU,amplifier, power & logic Contact: Neel Seshan (neels@)Singles, Duals, Triples, QuadsPart Number Pin/Package DescriptionISO7218SOIC, 8SOP Single 100Mbps Digital IsolatorISO721M8SOIC Single 150Mbps Digital IsolatorISO7228SOIC Single 100Mbps Digital Isolator with Enable ISO722M8SOIC Single 150Mbps Digital Isolator with EnablePart Number Pin/Package DescriptionISO7230A16SOIC Triple Channel, 3/0, 1Mbps, Digital Isolator ISO7230C16SOIC Triple Channel, 3/0, 25Mbps, Digital Isolator ISO7230M16SOIC Triple Channel, 3/0, 150Mbps, Digital Isolator ISO7231A16SOIC Triple Channel, 2/1, 1Mbps, Digital Isolator ISO7231C16SOIC Triple Channel, 2/1, 25Mbps, Digital Isolator ISO7231M16SOIC Triple Channel, 2/1, 150Mbps, Digital Isolator Part Number Pin/Package DescriptionISO15012SOP Dual, Isolated, Bi-Directional Digital CouplerISO7220A8SOIC Dual Channel, 2/0, 1Mbps Digital IsolatorISO7220B8SOIC Dual Channel, 2/0, 5Mbps Digital IsolatorISO7220C8SOIC Dual Channel, 2/0, 25Mbps Digital IsolatorISO7220M8SOIC Dual Channel, 2/0, 150Mbps Digital IsolatorISO7221A8SOIC Dual Channel, 1/1, 1Mbps Digital IsolatorISO7221B8SOIC Dual Channel, 1/1, 5Mbps Digital IsolatorISO7221C8SOIC Dual Channel, 1/1, 25Mbps Digital IsolatorISO7221M8SOIC Dual Channel, 1/1, 150Mbps Digital IsolatorISO74208SOIC Low Power Dual Channel IsolatorsISO7420M8SOIC Low-Power Dual-Channel IsolatorsISO74218SOIC Dual Channel, 1/1, 200Mbps Digital IsolatorISO7421M8SOIC Enhanced Temperature Range Dual Channel, 1/1,200Mbps Digital IsolatorPart Number Pin/Package DescriptionISO7240A16SOIC Quad Channel, 4/0, 1Mbps, Digital IsolatorISO7240C16SOIC Quad Channel, 4/0, 25Mbps, Digital IsolatorISO7240CF16SOIC Quad, 4/0, 25Mbps, Digital Isolator, SelectableFailsafeISO7240M16SOIC Quad Channel, 4/0, 150Mbps, Digital Isolator ISO7241A16SOIC Quad Channel, 3/1, 1Mbps, Digital IsolatorISO7241C16SOIC Quad Channel, 3/1, 25Mbps, Digital IsolatorISO7241M16SOIC Quad Channel, 3/1, 150Mbps, Digital Isolator ISO7242A16SOIC Quad Channel, 2/2, 1Mbps, Digital IsolatorISO7242C16SOIC Quad Channel, 2/2, 25Mbps, Digital Isolator ISO7242M16SOIC Quad Channel, 2/2, 150Mbps, Digital IsolatorSINGLES DUALS TRIPLES QUADSIsolated TransceiversPart Number Pin/Package DescriptionISO10508SOP Isolated 5-V CAN TransceiversISO117616SOIC Isolated PROFIBUS RS-485 TransceiverISO1516SOIC Isolated 3.3-V Full & Half-Duplex RS-485 Transceivers ISO308016SOIC Isolated 5-V Full & Half-Duplex RS-485 Transceivers ISO308216SOIC Isolated 5-V Full & Half-Duplex RS-485 Transceivers ISO308616SOIC Isolated 5-V Full & Half-Duplex RS-485 Transceivers ISO308816SOIC Isolated 5-V Full & Half-Duplex RS-485 Transceivers ISO3516SOIC Isolated 3.3-V Full & Half-Duplex RS-485 Transceivers。