VAMP120 presentation for PD V1

MUR120 SeriesPreferred Devices SWITCHMODE EPower RectifiersMUR105, MUR110, MUR115, MUR120,MUR130, MUR140, MUR160The MUR120 series of SWITCHMODE power rectifiers are designed for use in switching power supplies, inverters and as free wheeling diodes.Features•Ultrafast 25, 50 and 75 Nanosecond Recovery Times•175°C Operating Junction Temperature•Low Forward V oltage•Low Leakage Current•High Temperature Glass Passivated Junction•Reverse V oltage to 600 V•Pb−Free Packages are Available*Mechanical Characteristics•Case: Epoxy, Molded•Weight: 0.4 gram (approximately)•Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable•Lead and Mounting Surface Temperature for Soldering Purposes: 220°C Max. for 10 Seconds, 1/16″ from case•Shipped in plastic bags, 1000 per bag•Available Tape and Reeled, 5000 per reel, by adding a “RL’’ suffix to the part number•Polarity: Cathode Indicated by Polarity Band*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.Preferred devices are recommended choices for future use and best overall value.See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.ORDERING INFORMATIONMARKING DIAGRAMULTRAFAST RECTIFIERS1.0 A, 50 V − 600 VMUR= Device Code1xx= Specific Device CodeA= Assembly LocationYY= YearW= Work Week查询mur 160供应商MAXIMUM RATINGSvalues (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.THERMAL CHARACTERISTICSELECTRICAL CHARACTERISTICSSpecifications Brochure, BRD8011/D.MUR105, MUR110, MUR115, MUR120Figure 1. Typical Forward Voltagev F, INSTANTANEOUS VOLTAGE (VOLTS)3.00.010.030.020.20.1102.00.70.30.050.55.0, I N S T A N T A N E O U S F O R W A R D C U R R E N T (A M P S )FI F(AV), AVERAGE FORWARD CURRENT (AMPS)1.02.03.04.05.0P F (A V )0T A , AMBIENT TEMPERATURE (°C)Figure 3. Current Derating (Mounting Method #3 Per Note 1)Figure 4. Power Dissipation 1030505.0V R , REVERSE VOLTAGE (VOLTS)Figure 5. Typical Capacitance0.071.07.0C , C A P A C I T A N C E (p F ), A V E R A G E P O W E R D I S S I P A T I O N (W A T T S )i 7.020MUR130, MUR140, MUR160Figure 6. Typical Forward Voltagev F, INSTANTANEOUS VOLTAGE (VOLTS)0.30.90.51.33.00.010.030.020.20.1102.00.70.30.050.55.0, I N S T A N T A N E O U S F O R W A R D C U R R E N T (A M P S )F2.3V R , REVERSE VOLTAGE (VOLTS)2001003004001000.010.0041.010I R 700Figure 7. Typical Reverse Current*I F(AV), AVERAGE FORWARD CURRENT (AMPS)1.02.03.04.05.0P F (A V )0T A , AMBIENT TEMPERATURE (°C)2.01.03.05.04.0I Figure 8. Current Derating (Mounting Method #3 Per Note 1)Figure 9. Power Dissipation 5.010202.0V R , REVERSE VOLTAGE (VOLTS)Figure 10. Typical Capacitance0.70.071.07.0 1.72.16005000.1, R E V E R S E C U R R E N T ( A )* The curves shown are typical for the highest voltage device in the voltage grouping. Typical reverse current for lower voltage selections can be estimated from these same curves if V R is sufficiently below rated V R .C , C A P A C I T A N C E (p F ), A V E R A G E P O W E R D I S S I P A T I O N (W A T T S )i , A V E R A G E F O R W A R D C U R R E N T (A M P S )F (A V ) 3.07.0m 1.11.51.94000.044.0400.4NOTE 1. — AMBIENT MOUNTING DATAPACKAGE DIMENSIONSAXIAL LEAD CASE 59−10ISSUE SDIM MIN MAX MIN MAX MILLIMETERSINCHES A 4.10 5.200.1610.205B 2.00 2.700.0790.106D 0.710.860.0280.034F −−− 1.27−−−0.050K25.40−−−1.000−−−NOTES:1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.2.CONTROLLING DIMENSION: INCH.3.59−04 OBSOLETE, NEW STANDARD 59−09.4.59−03 OBSOLETE, NEW STANDARD 59−10.5.ALL RULES AND NOTES ASSOCIATED WITH JEDEC DO−41 OUTLINE SHALL APPLY6.POLARITY DENOTED BY CATHODE BAND.7.LEAD DIAMETER NOT CONTROLLED WITHIN F DIMENSION.ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further noticeto any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.PUBLICATION ORDERING INFORMATIONSWITCHMODE is a trademark of Semiconductor Components Industries, LLC.。

《飞兆半导体的１２００ＶＮＰＴ沟道ＩＧＢＴ抗雪崩能力佳等》飞兆半导体的1200V NPT沟道IGBT抗雪崩能力佳FGA25N120ANTD 1200V NPT沟道IGBT，结合业界最佳的抗雪崩能力和经优化的开关和导通损耗性能权衡，为电磁加热(IH)应用提高系统可靠性和效率。

FGA25N120ANTD专为微波炉、IH电饭煲和其它IH炊具而设计，与上一代器件相比，它的工作温度可降低达10℃，因而能够延长系统寿命。

NPT沟道IGBT采用飞兆半导体的专利沟道技术和非穿通型(NPT)技术。

这种优化的单元设计和薄型晶圆制造工艺使得FGA25N120ANTD能够耐受最大450mJ的雪崩能量，确保在异常的雪崩模式情况下仍能进行无故障运作。

在电磁加热设备中，不稳定的功率、AC线路浪涌和系统故障会引起雪崩模式情况，导致机器瞬间失效。

为了解决IH应用中的这些可靠性问题，我们的新型1200V NPT沟道IGBT提供业界最佳的抗雪崩能力，还同时优化性能方面的权衡，以降低工作温度及提升总体系统效率。

FGA25N120ANTD的其它特性和系统优势包括：低饱和电压(VCE(sat),typ =2.0V@IC=25A和TC=25℃)以限制导通损耗；低开关损耗(Eoff,typ=0.96mJ@IC=25A和TC=25℃)以减少系统功耗；内置FRD(快速恢复二极管) 以简化电路设计和减少元件数。

FGA25N120ANTD以TO-3P无铅封装形式供货，能达到甚至超越IPC/JEDEC的J-STD-020B标准要求，并符合现已生效的欧盟标准。

价格：每个2.50美元/个(订购1,000个)供货：现货交货期：收到订单后12周内飞兆半导体针对高功率电磁加热应用如电饭煲和其它IH饮具及微波炉等，提供范围广泛的600V～1700V分立IGBT产品集，能满足客户对于电磁加热拓扑各种不同的需求。

飞兆推出USB 2.0 MicroPak芯片级封装开关飞兆半导体(Fairchild Semiconductor)单端口USB 2.0“高速”(480 Mbps)模拟开关FSUSB23，采用MicroPak芯片级封装(CSP)。

2*截至2019.7，尚未在中国上市，未正式发布中文名Pembrolizumab 帕博利珠单抗Nivolumab 纳武利尤单抗Atezolizumab*Duralumab*Avelumab*PD-1单抗PD-L1 单抗•FDA 批准二线使用•国内获批二线使用•FDA 批准一/二线使用•国内获批一线使用•FDA 批准一/二线使用•FDA 批准局晚期使用•一线III 期临床研究进行中PD-1单抗特瑞普利单抗Toripalimab 2018.12黑色素瘤适应症获批卡瑞利株单抗Camrelizumab2019.6cHL 适应症获批替雷利珠单抗Tislelizumab审批中信迪利单抗Sintilimab2018.12cHL 适应症获批PD-1/PD-L1单抗NSCLC 适应症批准情况•二线III 期临床研究结果阴性•一线III 期临床研究进行中•均尚未有NSCLC 适应症获批数据截至2019.7领域知识NSCLC二线及二线以上免疫治疗总览•进口PD-1/PD-L1研究进展•替雷利珠单抗研究数据更新•其他国产PD-1研究及早期数据3Shepherd, et al. J Clin Oncol 2000多西他赛75mg/m 2因此成为NSCLC 二线治疗的标准TAX317 多西他赛成为NSCLC 肺癌二线治疗标准BSC ：最佳支持治疗OS化疗时代，多西他赛是NSCLC二线标准治疗多西他赛现有PD-1/PD-L1抑制剂二线及以上NSCLC 的III 期研究1. Felip E, et al. ESMO 2017;2.Wu YL, et al. 2018 AACR Abstract CT114;3. Herbst, et al. ESMO 2016;4. Barlesi, et al. ESMO 2016；5.Barlesi,et ncet Oncol.2018 Nov;19(11):1468-1479.CheckMate0171CheckMate0571CheckMate0782KEYNOTE-0103OAK 4Javelin 200 Lung 5研究组别Nivolumabvs 多西他赛Nivolumabvs 多西他赛Nivolumabvs 多西他赛Pembrolizumab 2mg 或10mg/kg vs 多西他赛Atezolizumabvs 多西他赛Avelumabvs 多西他赛研究分期III III III II/III III IIIPD-L1表达不限制不限制不限制TPS *%≥1%不限制分层(TPS**≥1%, <1%)病例数，n 272 (135 vs 137)582 (292 vs 290)504（338 vs 166）1033(344 vs 346 vs 343)最初入组850(425 vs 425)PD-L1+529(264 vs 265)病理类型，%非鳞癌鳞癌其他/未知0100-1000-60400702187426-PD-L1+3466-治疗线数，%2L 3L >3L其他/未知1000008811<10918--69209<1752500PD-L1+8911<10TPS(Tumor Proportion Score)：肿瘤比例评分，细胞膜部分或完全PD-L1表达的可见肿瘤细胞所占比例。