LM5105
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关节病编码中文名称拼音首字母M00.002 葡萄球菌性多关节炎 PTQJXDGJYM00.091 葡萄球菌性关节炎 PTQJXGJYM00.102 肺炎球菌性多关节炎 FYQJXDGJYM00.191 肺炎球菌性关节炎 FYQJXGJYM00.202 链球菌性多关节炎 LQJXDGJYM00.291 链球菌性关节炎 LQJXGJYM00.802 大肠杆菌性多关节炎 DCGJXDGJYM00.891 大肠杆菌性关节炎 DCGJXGJYM00.952 骨盆区和大腿的化脓性关节炎 GPQHDTDHNXGJY M00.973 跖趾感染 ZZGRM00.984 感染性颞下颌关节炎 GRXNXHGJYM00.991 感染性关节炎 GRXGJYM00.992 化脓性关节炎 HNXGJYM00.995 关节积脓 GJJLM02.091 肠旁路术后关节病 CPLSHGJBM02.191 痢疾后关节病 LJHGJBM02.291 血清性关节炎 XQXGJYM02.301 莱特尔(尿道炎-结膜炎-关节炎)综合征 LTENDYJMYGJYZHZM02.891 其他反应性关节病 QTFYXGJBM02.901 反应性关节病在其他方面未特指 FYXGJBM05.001 类风湿性关节炎合并脾大和白细胞减少[费尔蒂综合征] LFSXGJYHBPDHBXBJSFED M05.101+ 类风湿疾病肺改变 LFSJBFGBM05.102+ 类风湿性肺泡炎 LFSXFPYM05.103+ 类风湿性弥漫性肺间质纤维化 LFSXMMXFJZXWHM05.104+ 类风湿性纤维化肺泡炎M05.105+ 类风湿尘肺[卡普兰综合征] LFSCFKPLZHZM05.106+ 类风湿性肺病 LFSXFBM05.201 类风湿性脉管炎 LFSXMGYM05.301 累及内脏的类风湿性关节炎 LJNZDLFSXGJYM05.302 累及全身的类风湿性关节炎 LJQSDLFSXGJYM05.303+ 类风湿性关节炎性心肌病 LFSXGJYXXJB M05.304+ 类风湿性多神经病 LFSXDSJB M05.305+ 类风湿性心肌病 LFSXXJBM05.306+ 类风湿性关节炎伴心包炎 LFSXGJYBXBYM05.307+ 类风湿性心肌炎 LFSXXJYM05.308+ 类风湿性心脏病 LFSXXZBM05.309+ 类风湿性关节炎伴心炎 LFSXGJYBXYM05.951 血清反应阳性的类风湿性关节炎在其他方面未特指 XQFYYXDLFSXGJYM06.001 血清反应阴性的类风湿性关节炎 XQFYYXDLFSXGJYM06.191 成年型斯蒂尔病或综合征[成人型类风湿性关节炎] CNXSDEBHZHZCRXLFSXGJM06.291 类风湿性粘液囊炎 LFSXNYNYM06.391 类风湿性结节 LFSXJJM06.401 炎性多关节病 YXDGJBM06.881 其他特指的类风湿性关节炎 QTTZDLFSXGJYM06.981 类风湿性颞下颌关节炎 LFSXNXHGJYM06.991 类风湿性关节炎在其他方面未特指 LFSXGJYM08.001 幼年型全身性类风湿性关节炎[变应性亚败血症] YNXQSXLFSXGJYBYXYBXZ M08.101 幼年型关节强硬性脊椎炎 YNXGJQYXJZYM08.202 幼年型全身性关节炎[斯蒂尔氏病] YNXQSXGJYSDESBM08.203 幼年型关节炎伴全身性发病 YNXGJYBQSXFBM08.291 斯蒂尔病 SDEBM08.301 儿童类风湿病,多关节型 ETLFSBDGJXM08.302 幼年型多关节炎(血清反应阴性) YNXDGJYXQFYYX M08.393 慢性幼年型关节炎 MXYNXGJYM08.491 少关节性幼年型关节炎 SGJXYNXGJYM08.891 其他幼年型关节炎 QTYNXGJYM08.991 幼年型关节炎在其他方面未特指 YNXGJYM10.091 痛风石 TFS M10.092 痛风性关节炎 TFXGJYM10.093 痛风性滑囊炎 TFXHNYM10.094+ 心痛风石 XTFS M10.095 特发性痛风 TFXTFM10.096 痛风性粘液囊炎 TFXNYNYM10.097 原发性痛风 YFXTFM10.191 铅性痛风 QXTFM10.291 药物性痛风 YWXTFM10.391 痛风性肾病 TFXSBM10.392 痛风性肾结石 TFXSJSM10.495 其他继发性痛风 QTJFXTFM10.991 痛风在其他方面未特指 TFM10.992 痛风结节 TFJJ M10.993+ 耳痛风石 ETFSM11.095 羟磷灰石沉着病 QLHSCZBM11.195 家族性软骨钙沉着 JZXRGGCZM11.291 软骨钙沉着在其他方面未特指 RGGCZM11.885 其他特指的晶体性关节病QTTZDJTXGJBM11.995 晶体性关节病在其他方面未特指JTXGJBM12.095 雅库氏综合征[慢性风湿病后关节病] YKSZHZMXFSBHGJB M12.191 大骨节病[卡斯钦-贝克病] DGJBKSQBKBM12.291 绒毛结节状滑膜炎(色素沉着的) RMJJZHMYSSCZDM12.395 复发性风湿病FFXFSBM12.495 间歇性关节积液(水) JXXGJJYSM12.585 创伤性颞下颌关节炎(病) CSXNXHGJYBM12.595 创伤性关节炎(病) CSXGJYBM12.891 短暂性关节炎DZXGJYM13.051 多关节炎在其他方面未特指DGJYM13.155 髋关节炎KGJYM13.195 单关节炎 NEC DGJYM13.805 幼年型多关节炎YNXDGJYM13.885 颞下颌关节炎NXHGJYM13.891 变应性关节炎BYXGJYM13.895 更年期关节炎GNQGJYM13.896 退变性关节炎TBXGJYM13.991 关节炎(病) 在其他方面未特指 GJYBM15.005 原发性全身性(骨)关节病YFXQSXGGJBM15.195 赫伯登结节(伴关节病) HBDJJBGJBM15.295 沙尔结节(伴关节病) SEJJBGJBM15.305 继发性多发性关节病JFXDFXGJBM15.306 创伤后多关节病CSHDGJBM15.495 侵蚀性(骨)关节病QSXGGJBM15.805 海加思结节HJSJJM15.806 其他多关节病QTDGJBM15.905 慢性多发性对称性骨关节病MXDFXDCXGGJBM15.906 全身性骨关节病(炎)黄子孙在其他方面未特指QSXGGJBYHZS M16.055 原发性双侧髋关节病YFXSCKGJBM16.155 原发性单侧髋关节病YFXDCKGJBM16.255 发育异常引起的双侧髋关节病FYYCYQDSCKGJBM16.355 发育异常性单侧髋关节病FYYCXDCKGJBM16.455 创伤后双侧髋关节病CSHSCKGJBM16.555 创伤后单侧髋关节病CSHDCKGJBM16.655 继发性双侧髋关节病JFXSCKGJBM16.755 继发性单侧髋关节病JFXDCKGJBM16.951 髋关节病在其他方面未特指KGJBM17.065 原发性双侧膝关节病YFXSCXGJBM17.165 原发性单侧膝关节病YFXDCXGJBM17.265 创伤后双侧膝关节病CSHSCXGJBM17.365 创伤后单侧膝关节病CSHDCXGJBM17.465 其他继发性双侧膝关节病QTJFXSCXGJBM17.565 继发性单侧膝关节病JFXDCXGJBM17.961 膝关节病在其他方面未特指XGJBM18.045 双侧第一腕掌关节的原发性关节病SCDYWZGJDYFXGJBM18.145 单侧第一腕掌关节的原发性关节病DCDYWZGJDYFXGJBM18.245 双侧第一腕掌关节的创伤后关节病SCDYWZGJDCSHGJBM18.345 单侧第一腕掌关节的创伤后关节病DCDYWZGJDCSHGJBM18.445 双侧第一腕掌关节的继发性关节病SCDYWZGJDJFXGJBM18.545 单侧第一腕掌关节的继发性关节病DCDYWZGJDJFXGJBM18.945 第一腕掌关节的关节病在其他方面未特指DYWZGJDGJBM19.095 原发性关节病在其他方面未特指YFXGJBM19.195 创伤后关节病在其他方面未特指CSHGJBM19.295 继发性关节病在其他方面未特指JFXGJBM19.821 肘骨关节病ZGGJBM19.841 指骨关节病ZGGJBM19.895 其他特指关节病QTTZGJBM19.935 双侧腕骨性关节炎(病) SCWGXGJYBM19.955 双侧髋关节骨性关节炎(病) SCKGJGXGJYB M19.965 老年性膝关节炎(病) LNXXGJYBM19.966 双侧膝骨性关节炎(病) SCXGXGJYBM19.975 双侧踝关节骨性关节炎(病) SCHGJGXGJYB M19.991 骨关节病GGJB M19.995 肥大性关节炎[骨关节炎] FDXGJYGGJYM19.996 局限性关节病JXXGJBM19.997 骨性(病)关节炎GXBGJYM20.041 后天性槌状指HTXCZZM20.042 后天性指畸形HTXZJXM20.045 后天性小指屈曲畸形HTXXZQQJXM20.046 后天性手畸形HTXSJXM20.047 后天性指挛缩畸形HTXZLSJXM20.171 拇囊炎(足) MNYZM20.172 后天性拇外翻HTXMWFM20.275 僵拇(足) JMZM20.371 后天性拇(足)内翻HTXMZNFM20.375 拇(足)内翻MZNFM20.376 拇(足)变形(后天性) MZBXHTXM20.475 其他后天性锤状趾QTHTXCZZM20.571 足仰趾畸形ZYZJXM20.671 后天性趾畸形在其他方面未特指HTXZJX M21.021 后天性肘外翻HTXZWFM21.061 后天性膝外翻HTXXWFM21.071 后天性马蹄外翻足HTXMTWFZM21.072 后天性足外翻HTXZWFM21.121 后天性肘内翻HTXZNFM21.151 后天性髋内翻HTXKNFM21.161 后天性膝内翻HTXXNFM21.171 后天性足内翻HTXZNFM21.225 后天性肘关节屈曲畸形HTXZGJQQJXM21.261 后天性膝关节屈曲畸形HTXXGJQQJXM21.335 后天性腕下垂HTXWXCM21.371 后天性足下垂HTXZXCM21.471 扁平足[平足](后天性) BPZPZHTXM21.545 手爪形SZXM21.571 后天性高弓足HTXGGZM21.575 后天性足畸形HTXZJXM21.576 仰趾弓形足(爪形趾) YZGXZZXZM21.671 足后天畸形ZHTJXM21.785 后天性四肢长度不等HTXSZCDBDM21.815 后天性翼状肩胛骨HTXYZJJGM21.851 后天性股骨畸形HTXGGJXM21.935 后天性腕关节畸形HTXWGJJXM21.951 后天性髋关节畸形HTXKGJJXM21.981 后天性下肢畸形HTXXZJXM21.995 后天性关节畸形HTXGJJXM22.065 习惯性复发性髌骨脱位XGXFFXBGTW M22.165 复发性髌骨不全脱位FFXBGBQTWM22.205 髌股疾患BGJHM22.365 髌骨其他紊乱BGQTWLM22.461 髌骨软骨软化BGRGRHM22.865 髌骨其他疾患BGQTJHM22.965 髌骨疾患在其他方面未特指BGJH M23.061 膝外侧半月板囊肿XWCBYBNZM23.091 膝半月板囊肿XBYBNZM23.095 膝关节囊肿XGJNZM23.191 先天性盘状半月板XTXPZBYBM23.231 陈旧性膝内侧半月板损伤CJXXNCBYBSSM23.235 陈旧性半月板内侧桶柄样撕裂CJXBYBNCTBYSL M23.261 陈旧性膝外侧半月板损伤CJXXWCBYBSSM23.291 陈旧性半月板损伤CJXBYBSSM23.295 陈旧性膝关节韧带损伤CJXXGJRDSSM23.315 内侧半月板前角紊乱NCBYBQJWLM23.325 内侧半月板后角紊乱NCBYBHJWLM23.335 内侧半月板紊乱NCBYBWLM23.365 陈旧性外侧半月板紊乱CJXWCBYBWLM23.395 膝关节变性XGJBXM23.396 病理性关节脱位BLXGJTWM23.491 膝关节游离体XGJYLTM23.595 膝慢性不稳定性疾患XMXBWDXJHM23.695 膝韧带其他自然破裂XRDQTZRPLM23.895 膝韧带松弛XRDSCM23.896 半月板钙化BYBGHM23.897 弹响膝DXXM23.995 半月板疾患在其他方面未特指 BYBJH M23.996 膝内部紊乱在其他方面未特指 XNBWL M24.091 关节内游离体GJNYLTM24.195 其他关节软骨疾患QTGJRGJHM24.281 项韧带肥厚XRDFHM24.291 黄韧带肥厚HRDFHM24.292 韧带钙化RDGHM24.295 韧带囊肿RDNZM24.296 韧带松弛RDSCM24.351 髋关节病理性脱位KGJBLXTWM24.361 膝关节病理性脱位XGJBLXTWM24.391 关节病理性脱位GJBLXTWM24.392 关节自发性脱位GJZFXTWM24.465 膝韧带囊肿XRDNZM24.491 关节习惯性脱位GJXGXTWM24.535 腕关节屈曲挛缩WGJQQLSM24.551 髋关节屈曲挛缩(后天性) KGJQQLSHTX M24.565 膝反屈XFQM24.591 关节挛缩GJLSM24.595 关节弯曲GJWQM24.621 肘关节强硬ZGJQYM24.645 指间关节强直ZJGJQZM24.651 髋关节强硬KGJQYM24.661 膝关节强硬XGJQYM24.671 踝关节强硬HGJQYM24.685 颞颌关节强硬NHGJQYM24.691 关节强硬GJQYM24.755 髋臼前突KJQTM24.811 陈旧性肩关节脱位CJXJGJTWM24.855 髋关节紊乱KGJWLM24.856 应激性髋YJXKM24.861 陈旧性髌骨脱位CJXBGTWM24.885 腰椎关节紊乱YZGJWLM24.891 关节粘连GJNLM24.995 关节紊乱在其他方面未特指GJWLM25.091 关节积血GJJXM25.195 关节瘘GJLM25.295 关节松弛GJSCM25.395 关节其他不稳定性疾患GJQTBWDXJHM25.491 关节积液GJJYM25.505 多关节痛DGJTM25.506 痛痛病(骨和关节的及四肢痛疼) TTBGHGJDJSZTT M25.511 肩关节痛JGJTM25.551 髋关节痛KGJTM25.561 膝关节痛XGJTM25.591 关节痛GJTM25.661 膝关节僵硬XGJJYM25.681 肢体僵硬ZTJYM25.691 关节僵硬GJJYM25.795 骨赘GZM25.891 关节肿胀GJZZM25.892 关节周围骨化GJZWGHM25.895 其他特指关节疾患难QTTZGJJHNM25.991 关节病GJBM25.992 关节肿物GJZW骨病和软骨病编码中文名称拼音首字母M80.095 绝经后骨质疏松伴病理性骨折JJHGZSSBBLXGZM80.195 卵巢切除术后骨质疏松伴病理性骨折LCQCSHGZSSBBLXGZM80.295 废用性骨质疏松伴病理性骨折FYXGZSSBBLXGZM80.395 手术后吸收障碍性骨质疏松伴病理性骨折SSHXSZAXGZSSBBLXGZ M80.495 药物性骨质疏松伴病理性骨折YWXGZSSBBLXGZM80.595 特发性骨质疏松伴病理性骨折TFXGZSSBBLXGZM80.895 其他骨质疏松伴病理性骨折QTGZSSBBLXGZM80.995 骨质疏松伴病理性骨折在其他方面未特指GZSSBBLXGZM81.095 绝经后骨质疏松JJHGZSSM81.195 卵巢切除术后骨质疏松LCQCSHGZSSM81.295 废用性骨质疏松FYXGZSSM81.395 手术后吸收障碍性骨质疏松SSHXSZAXGZSS M81.495 药物诱发性骨质疏松YWYFXGZSSM81.595 特发性骨质疏松TFXGZSSM81.695 局限性骨质疏松[勒凯纳] JXXGZSSLKNM81.895 创伤后骨质疏松CSHGZSSM81.896 老年性骨质疏松LNXGZSSM81.991 骨质疏松在其他方面未特指GZSSM83.095 产褥期骨软化CRQGRHM83.195 老年性骨软化LNXGRHM83.295 吸收障碍引起的成人骨软化XSZAYQDCRGRH M83.395 营养不良引起的成人骨软化YYBLYQDCRGRH M83.495 铝骨病LGBM83.595 药物引起的成人骨软化YWYQDCRGRHM83.895 其他成人骨软化QTCRGRHM83.991 成人骨软化在其他方面未特指 CRGRHM84.091 骨折畸形愈合GZJXYHM84.095 骨折连接不正GZLJBZM84.165 胫骨假关节JGJGJM84.191 骨折不愈合[假关节形成] GZBYHJGJXCM84.295 骨折迟延性愈合GZCYXYHM84.395 应力性骨折 NEC YLXGZM84.491 病理性骨折 NEC BLXGZM84.895 骨其他连续性疾患GQTLXXJHM84.995 骨连续性疾患在其他方面未特指GLXXJHM85.091 骨纤维异样增殖症(单骨性) GXWYYZZZDGXM85.095 骨纤维性发育不良(单发性) GXWXFYBLDFXM85.191 氟骨症FGZM85.195 地方性氟病[地方性氟中毒病] DFXFBDFXFZDB M85.281 颅骨肥厚LGFHM85.391 致密性骨炎ZMXGYM85.495 单房性骨囊肿DFXGNZM85.595 动脉瘤样骨囊肿DMLYGNZM85.655 坐骨结节囊肿ZGJJNZM85.691 骨囊肿GNZM85.895 骨密度和结构其他特指疾患GMDHJGQTTZJHM85.995 骨密度和结构疾患在其他方面未特指GMDHJGJH M86.095 急性血原性骨髓炎JXXYXGSYM86.191 急性骨髓炎JXGSYM86.295 亚急性骨髓炎YJXGSYM86.395 慢性多病灶性骨髓炎MXDBZXGSYM86.495 慢性骨髓炎伴有引流窦道MXGSYBYYLDDM86.595 其他慢性血原性骨髓炎QTMXXYXGSYM86.691 慢性骨髓炎MXGSYM86.692 慢性化脓性骨髓炎MXHNXGSYM86.695 陈旧性骨髓炎CJXGSYM86.865 慢性膝关节滑膜炎MXXGJHMYM86.871 跖骨籽骨形成ZGZGXCM86.891 骨干炎GGYM86.892 硬化性骨髓炎YHXGSYM86.893 骨肉芽肿GRYZM86.895 布罗迪(Brodie)氏病[骨骺端脓肿] BLDSBGHDNZ M86.896 波特瘤浮肿性BTLFZXM86.981 上肢骨骨髓炎SZGGSYM86.982 颅骨骨髓炎LGGSYM86.983 肋骨骨髓炎LGGSYM86.984 上肢骨炎SZGYM86.985 单肢骨膜炎DZGMYM86.991 骨感染在其他方面未特指 GGRM86.992 骨膜炎在其他方面未特指 GMYM86.993 骨髓炎在其他方面未特指 GSYM86.994 骨炎GYM86.995 急性骨膜炎JXGMYM86.996 慢性骨膜炎MXGMYM86.997 化脓性骨髓炎HNXGSYM86.998 感染性骨膜炎GRXGMYM86.999 弥漫性骨膜炎MMXGMYM87.051 股骨头无菌性坏死GGTWJXHSM87.091 骨无菌性坏死GWJXHSM87.195 药物引起骨坏死YWYQGHSM87.295 创伤后引起的骨坏死CSHYQDGHSM87.395 其他继发性骨坏死QTJFXGHSM87.855 无菌性或无血管性髋坏死WJXHWXGXKHSM87.951 股骨头缺血性坏死GGTQXXHSM87.991 骨坏死在其他方面未特指 GHSM87.995 无菌性或无血管性骨坏死WJXHWXGXGHSM87.996 椎骨坏死ZGHSM88.085 佩吉特氏病[颅骨畸形性骨炎] PJTSBLGJXXGYM88.895 骨的佩吉特氏病GDPJTSBM88.896 其他骨的佩吉特氏病QTGDPJTSBM88.995 骨佩吉特病[变形性骨炎] 在其他方面未特指 GPJTBBXXGY M88.996 畸形性骨炎JXXGYM89.011 肩手综合征JSZHZM89.085 祖德克萎缩ZDKWSM89.095 交感反射性营养不良JGFSXYYBLM89.096 痛性神经营养不良TXSJYYBLM89.195 哈里斯线[骺横线] HLSXHHXM89.196 骨骺生长停止GHSCTZM89.295 骨发育和生长的其他疾患GFYHSCDQTJHM89.375 跟骨骨质增生GGGZZSM89.381 下颌骨肥大XHGFDM89.391 骨质增生GZZSM89.395 骨肥大(膨大) GFDPDM89.491 肥大性肺性骨关节病FDXFXGGJBM89.492 厚皮性骨膜病(皮肤肥厚骨膜骨质增生症) HPXGMBPFFHGMGZZSZ M89.591 大块溶骨病DKRGBM89.592 骨质溶解GZRJM89.695 脊髓灰质后骨病JSHZHGBM89.821 肱骨全长破坏GGQCPHM89.885 下颌骨肿物XHGZWM89.891 非骨化性纤维瘤FGHXXWLM89.892 骨质破坏GZPHM89.893 婴儿型骨皮质增生症YEXGPZZSZM89.895 骨痛GTM89.896 骨质破坏(原因不明) GZPHYYBMM89.897 婴儿骨外层肥厚YEGWCFHM89.898 创伤后骨膜下骨化CSHGMXGHM89.971 跖骨肿物ZGZWM89.981 胸骨病变XGBBM89.995 外生骨疣WSGYM91.055 幼年期髋臼骨盆软骨炎[瓦尔登斯特伦氏病] YNQKJGPRGYWEDSTLSB M91.056 髂嵴骨软骨病[布坎南](幼年型) QJGRGBBKNYNXM91.057 耻骨联合[皮尔逊]骨软骨病(幼年型) CGLHPEXGRGBYNXM91.151 股骨头骨软骨炎GGTGRGYM91.155 非创伤性股骨上端骨骺FCSXGGSDGHM91.156 幼年型股骨头骨软骨病[莱格-卡尔韦-佩尔特斯] YNXGGTGRGBLGKEWPETS M91.251 扁平髋BPKM91.355 假性髋关节痛JXKGJTM91.855 先天性幼年型髋关节脱位复位后骨软骨病XTXYNXKGJTWFWHGRGBM91.955 髋幼年型骨软骨病在其他方面未特指KYNXGRGBM91.956 骨盆幼年型骨软骨病在其他方面未特指 GPYNXGRGBM92.005 肱骨小头[潘内病骨软骨病](幼年型) GGXTPNBGRGBYNXM92.006 肱骨头[哈斯]骨软骨病(幼年型) GGTHSGRGBYNXM92.105 桡骨头[布雷斯福德骨软骨病骨软骨病](幼年型) RGTBLSFDGRGBGRGBYNX M92.106 尺骨下段[伯恩斯]的骨软骨病(幼年型) CGXDBESDGRGBYNXM92.205 掌骨头[莫克莱尔]骨软骨病(幼年型) ZGTMKLEGRGBYNXM92.206 腕骨[金伯克]骨软骨病(幼年型) WGJBKGRGBYNXM92.305 上肢幼年型骨软骨病SZYNXGRGBM92.405 髌幼年型(骨软)骨软骨病BYNXGRGRGBM92.406 髌骨初级骨化中心[薛勒]骨软骨病(幼年型) BGCJGHZXXLGRGBYNXM92.407 髌骨次级骨化中心[辛丁拉森]骨软骨病(幼年型) BGCJGHZXXDLSGRGBYNX M92.505 胫骨结节[奥斯古德-施拉特]骨软骨病(幼年型) JGJJASGDSLTGRGBYNX M92.506 胫骨上段[布朗特]骨软骨病JGSDBLTGRGBM92.601 跟骨[塞弗]骨骺炎GGSFGHYM92.605 跗舟[骨[薛勒]骨软骨病(幼年型) FZGXLGRGBYNXM92.606 外胫骨[哈格隆德]骨软骨病(幼年型) WJGHGLDGRGBYNXM92.607 距骨[迪亚兹]骨软骨病(幼年型) JGDYZGRGBYNXM92.705 第五跖骨[伊塞兰]骨软骨病(幼年型) DWZGYSLGRGBYNXM92.706 第二跖骨骨软骨病[弗赖伯格病] DEZGGRGBFLBGBM92.805 足幼年期骨软骨病[艾斯林氏病] ZYNQGRGBASLSBM92.806 下肢幼年型骨软骨病XZYNXGRGBM92.905 幼年型骨软骨病 MOS YNXGRGBM92.906 幼年型骨突炎在其他方面未特指YNXGTYM92.907 幼年型骨骺炎在其他方面未特指YNXGHYM93.001 非创伤性股骨上端骨骺滑脱FCSXGGSDGHHTM93.005 胫骨下端骨骺滑脱(非创伤性、陈旧性) JGXDGHHTFCSXCJX M93.105 成人金伯克病CRJBKBM93.106 成人腕月骨骨软骨病CRWYGGRGBM93.201 剥脱性骨软骨炎BTXGRGYM93.205 分离性骨软骨炎FLXGRGYM93.206 分离性膝骨软骨炎FLXXGRGYM93.207 分离性肩骨软骨炎FLXJGRGYM93.805 股骨骨软骨病GGGRGBM93.806 其他特指的骨软骨炎QTTZDGRGYM93.901 骨骺炎在其他方面未特指 GHYM93.902 骨软骨病在其他方面未特指GRGBM93.905 骨软骨炎在其他方面未特指GRGYM93.906 骨骺滑脱GHHTM93.907 茎突骨质增生JTGZZSM93.908 茎突综合征[茎突过长综合征] JTZHZJTGCZHZM94.085 肋与肋软骨连接处综合征[蒂策Tietze氏病] LYLRGLJCZHZDCSB M94.101 复发性多软骨炎FFXDRGYM94.295 软骨软化RGRHM94.395 软骨溶解RGRJM94.895 肋软骨炎LRGYM94.896 软骨炎RGYM94.897 化脓性软骨炎HNXRGYM94.995 软骨疾患在其他方面未特指RGJH背部病编码中文名称拼音首字母M40.091 青年期姿势性脊柱后凸QNQZSXJZHTM40.195 其他继发性脊柱后凸QTJFXJZHTM40.291 后天性脊柱后凸HTXJZHTM40.295 青年驼背QNTBM40.396 直背综合征ZBZHZM40.495 后天性姿势性脊柱前凸HTXZSXJZQTM40.591 脊柱前凸在其他方面未特指JZQTM41.095 婴儿特发性脊柱侧凸YETFXJZCTM41.195 幼年型特发性脊柱侧凸YNXTFXJZCTM41.196 青年脊柱侧凸QNJZCTM41.291 特发性脊柱侧凸(弯) TFXJZCTWM41.395 胸源性脊柱侧凸XYXJZCTM41.491 脊髓灰质炎后脊柱侧凸(弯) JSHZYHJZCTW M41.495 神经肌肉性脊柱侧凸SJJRXJZCTM41.595 其他继发性脊柱侧凸QTJFXJZCTM41.991 脊柱后侧凸JZHCTM41.992 脊柱侧凸(弯) 在其他方面未特指JZCTWM42.091 绍伊尔曼氏病[幼年型脊柱骨软骨炎] SYEMSBYNXJZGRGYM42.095 卡尔韦病KEWBM42.195 成年脊柱骨软骨病CNJZGRGBM42.995 椎体骨软骨炎[椎体骨骺炎] 在其他方面未特指ZTGRGYZTGHY M42.996 脊柱骨软骨病在其他方面未特指JZGRGBM43.095 脊椎骨脱离JZGTLM43.191 后天性脊椎滑脱HTXJZHTM43.195 脊椎前移JZQYM43.295 脊柱其他融合JZQTRHM43.315 复发性寰枢不完全性脱位,伴有脊髓病FFXHSBWQXTWBYJSBM43.415 其他复发性寰枢不完全性脱位QTFFXHSBWQXTWM43.595 其他复发性脊椎不完全性脱位QTFFXJZBWQXTWM43.621 斜颈XGM43.622 肌原性斜颈JYXXGM43.625 落日征LRZM43.885 其他特指变形性背部病QTTZBXXBBBM43.945 变形性背部病在其他方面未特指BXXBBBM43.991 后天性脊柱变形HTXJZBXM43.995 后天性脊柱弯曲HTXJZWQM45.X91 强直性脊柱炎QZXJZYM45.X95 玛丽-施特伦佩尔脊柱关节炎MLSTLPEJZGJYM45.X96 类风湿性脊椎炎[别赫捷列夫氏病] LFSXJZYBHJLFSB M45.X97 关节强硬性脊椎炎GJQYXJZYM45.X98 萎缩性脊柱炎(韧带) WSXJZYRDM46.095 脊柱的肌腱病JZDJJBM46.171 骶髂关节炎DQGJYM46.295 椎骨骨髓炎ZGGSYM46.395 椎间盘感染(脓性) ZJPGRNXM46.495 关节盘炎在其他方面未特指GJPYM46.595 传染性脊椎病CRXJZBM46.891 肥大性脊柱炎FDXJZYM46.892 化脓性脊柱炎HNXJZYM46.991 脊柱炎在其他方面未特指 JZYM47.025+ 椎动脉型颈椎病ZDMXGZBM47.096+ 椎动脉受压综合征ZDMSYZHZM47.097+ 脊髓前动脉压迫综合征JSQDMYPZHZM47.121+ 脊髓型颈椎病JSXGZBM47.141+ 胸椎关节强硬伴脊髓病XZGJQYBJSBM47.195+ 脊髓脊椎源性压迫JSJZYXYPM47.225+ 脊椎关节强硬伴有神经根病(神经根型颈椎病) JZGJQYBYSJGBSJGXGZB M47.821 颈椎关节强硬GZGJQYM47.841 胸椎关节强硬XZGJQYM47.865 腰椎骨质增生(腰椎骨关节炎) YZGZZSYZGGJYM47.866 腰椎关节强硬YZGJQYM47.875 腰骶关节强硬YDGJQYM47.991 变形性脊柱炎BXXJZYM47.992 脊柱骨关节病JZGGJBM47.995 老年性脊柱炎LNXJZYM47.996 脊柱关节强硬JZGJQYM48.021 颈椎管狭窄GZGXZM48.045 胸椎管狭窄XZGXZM48.061 腰椎管狭窄YZGXZM48.085 骶椎管狭窄DZGXZM48.091 椎管狭窄ZGXZM48.195 强直性骨肥厚[福雷斯蒂尔] QZXGFHFLSDE M48.196 弥漫性特发性骨肥厚[DISH] MMXTFXGFH M48.295 脊椎棘突吻合JZJTWHM48.395 创伤性脊椎病[坎梅耳氏病] CSXJZBKMESB M48.396 慢性(创伤性)脊椎炎MXCSXJZYM48.495 脊椎疲痨性骨折JZPLXGZM48.496 脊椎应力性骨折JZYLXGZM48.595 脊椎萎陷在其他方面未特指JZWXM48.596 脊椎楔入在其他方面未特指JZXRM48.821 颈后纵韧带钙化GHZRDGHM48.891 后纵韧带骨化HZRDGHM48.895 其他特指脊椎病QTTZJZBM48.995 脊椎病在其他方面未特指 JZBM50.005+ 颈椎间盘疾患伴脊髓病GZJPJHBJSBM50.105 颈椎间盘疾患,伴有神经根病GZJPJHBYSJGB M50.201 颈椎间盘脱出GZJPTCM50.301 颈椎间盘变性GZJPBXM50.805 其他颈椎间盘疾患QTGZJPJHM50.905 颈椎间盘疾患在其他方面未特指GZJPJHM51.001+ 椎间盘脱出伴脊髓病ZJPTCBJSBM51.005+ 腰椎关节强硬伴脊髓病YZGJQYBJSBM51.105 腰椎间盘疾患,伴有神经根病YZJPJHBYSJGB M51.201 胸椎间盘脱出XZJPTCM51.202 腰椎间盘脱出YZJPTCM51.205 腰椎横突综合征YZHTZHZM51.206 腰骶椎间盘脱出YDZJPTCM51.207 椎间盘脱出ZJPTCM51.301 腰骶椎间盘变性YDZJPBXM51.302 椎间盘变性ZJPBXM51.305 胸腰椎间盘变性XYZJPBXM51.405 施莫尔结SMEJM51.805 椎骨滑脱症ZGHTZM51.806 腰椎间退化性变YZJTHXBM51.901 椎间盘疾患在其他方面未特指 ZJPJHM51.905 腰椎病YZBM53.025 颈颅综合征[后颈交感神经综合征] GLZHZHGJGSJZHZ M53.125 颈臂综合征GBZHZM53.275 创伤性腰骶关节不稳CSXYDGJBWM53.276 腰骶椎体滑突YDZTHTM53.295 脊柱不稳定JZBWDM53.381 尾骨疼痛WGTTM53.385 骶尾部疼痛DWBTTM53.891 脊柱强直JZQZM53.895 其他特指的背部痛QTTZDBBTM53.995 背部病在其他方面未特指 BBBM54.025 影响到颈背区脂膜炎YXDGBQZMYM54.121 颈神经根病GSJGBM54.122 颈神经根炎GSJGYM54.123 臂丛神经根炎在其他方面未特指BCSJGYM54.141 胸神经炎在其他方面未特指XSJYM54.171 腰骶神经根病在其他方面未特指YDSJGBM54.175 腰骶神经根炎在其他方面未特指YDSJGYM54.191 神经根病SJGBM54.192 神经根炎SJGYM54.195 风湿性神经根炎FSXSJGYM54.221 颈痛GTM54.381 坐骨神经痛ZGSJTM54.465 腰部痛,伴坐骨神经痛YBTBZGSJTM54.475 腰腿痛YTTM54.551 腰背痛YBTM54.561 腰肌劳损YJLSM54.562 腰痛在其他方面未特指YT M54.563 第三横突综合征DSHTZHZ M54.575 下背劳损XBLSM54.576 下背肌筋膜炎XBJJMYM54.645 胸部脊柱疼痛XBJZTTM54.845 其他背痛QTBTM54.945 背痛在其他方面未特指BT软组织疾患编码中文名称拼音首字母M60.081 腰大肌脓肿YDJNZM60.091 感染性肌炎GRXJYM60.095 化脓性肌炎HNXJYM60.191 间质性肌炎JZXJYM60.291 异物性肉芽肿YWXRYZM60.295 滑石粉肉芽肿HSFRYZM60.891 坏死性肌炎HSXJYM60.895 创伤性(陈旧性)肌炎CSXCJXJY M60.896 风湿性肌炎FSXJYM60.897 姿势引起的肌炎ZSYQDJYM60.991 肌筋膜炎JJMYM60.992 肌炎在其他方面未特指JYM60.995 假肉瘤性肌膜炎[结节性肌膜炎] JRLXJMYJJXJMYM61.095 外伤性骨化性肌炎WSXGHXJYM61.195 进行性骨化性肌炎JXXGHXJYM61.196 弥漫性进行性骨化性肌炎[明希迈尔综合征] MMXJXXGHXJYMXMEZHZ M61.295 肌肉麻痹性钙化和骨化JRMBXGHHGHM61.395 烧伤引起的肌肉钙化SSYQDJRGHM61.495 肌肉其他钙化JRQTGHM61.591 骨化性肌炎GHXJYM61.995 肌肉钙化和骨化在其他方面未特指 JRGHHGHM62.095 肌肉分离JRFLM62.195 肌肉其他破裂(非创伤性) JRQTPLFCSXM62.295 肌肉缺血性梗死JRQXXGSM62.395 截瘫性不动综合征JTXBDZHZM62.481 下肢肌挛缩XZJLSM62.482 臀肌挛缩TJLSM62.483 上肢肌挛缩SZJLSM62.491 肌挛缩JLSM62.495 肌肉萎缩JRWSM62.505 弥漫性、全身性、原发性肌肉萎缩MMXQSXYFXJRWS M62.581 单侧肢体肌萎缩DCZTJWSM62.585 肢(上、下)肌肉萎缩ZSXJRWSM62.595 废用性肌肉萎缩FYXJRWSM62.596 肌肉消瘦和萎缩 NEC JRXSHWSM62.615 胸肌劳损(不包括外伤) XJLSBBKWSM62.861 腓骨长肌滑脱FGCJHTM62.862 腓肠肌肥大FCJFDM62.891 肌疝JSM62.8910 肌肉血肿JRXZM62.8911 肌张力缺失JZLQSM62.892 肌纤维变性JXWBXM62.893 肌肉瘢痕JRBHM62.894 肌肉肉芽肿JRRYZM62.895 肌间隙综合征JJXZHZM62.896 肌进行性变性JJXXBXM62.897 肌肉脂肪浸润JRZFJRM62.898 肌强直JQZM62.899 后天性肌强直[塔尔玛氏病] HTXJQZTEMSBM62.991 肌肉肿物JRZWM62.995 横纹肌变性肿胀HWJBXZZM62.996 筋膜病JMBM65.095 肌腱脓肿JJNZM65.195 其他感染性滑膜炎QTGRXHMYM65.295 钙化性肌腱炎GHXJJYM65.296 腱(鞘)钙化伴有粘液囊炎JQGHBYNYNYM65.345 弹响指DXZM65.391 扳机状指BJZZM65.395 结节性腱鞘病JJXJQBM65.435 桡骨茎突腱鞘炎[德奎尔万病] RGJTJQYDKEWB M65.891 肌腱钙化JJGHM65.892 粘连性肌腱炎NLXJJYM65.895 粘连性腱鞘炎NLXJQYM65.951 髋滑膜炎KHMYM65.961 膝滑膜炎XHMYM65.991 滑膜炎HMYM65.992 腱鞘炎JQYM66.085 腘囊肿破裂NYZPM66.195 滑膜破裂HMPLM66.196 滑囊囊肿破裂HNNZPLM66.295 自发性伸肌腱破裂ZFXSJJPLM66.395 自发性屈肌腱破裂ZFXQJJPLM66.495 其他肌腱自发性破裂QTJJZFXPLM66.591 非创伤性肌腱断裂在其他方面未特指FCSXJJDL M67.001 跟腱挛缩GJLSM67.005 短跟腱(后天性) DGJHTXM67.101 肌腱挛缩JJLSM67.105 拇指屈肌肌腱挛缩MZQJJJLSM67.106 胫前肌(腱)短JQJJDM67.205 滑膜肥大 NEC HMFDM67.305 短暂性滑膜炎DZXHMYM67.306 中毒性滑膜炎ZDXHMYM67.401 腱鞘囊肿JQNZM67.405 关节腱鞘囊肿GJJQNZM67.805 其他特指滑膜的和肌腱疾患QTTZHMDHJJJHM67.905 滑膜疾患和肌腱疾患在其他方面未特指 HMJHHJJJH M70.035 慢性腕碎裂音滑膜炎MXWSLYHMYM70.045 慢性手碎裂音滑膜炎MXSSLYHMYM70.145 手粘液囊炎SNYNYM70.225 鹰嘴粘液囊炎YZNYNYM70.325 肘粘液囊炎ZNYNYM70.465 髌骨前粘液囊炎BGQNYNYM70.561 膝滑囊炎XHNYM70.562 膝假性滑囊炎XJXHNYM70.573 鹅趾囊炎EZNYM70.695 转子腱炎ZZJYM70.696 转子粘液囊炎ZZNYNYM70.755 坐骨粘液囊炎ZGNYNYM70.756 髋骨粘液囊炎KGNYNYM70.885 与使用、过度使用和压迫有关的其他软组织疾患YSYGDSYHYPYGDQTRZZJHM70.995 与使用过度使用和压迫有关的软组织疾患在其他方面未特指YSYGDSYHYPYGDRZZJHM71.095 粘液囊脓肿NYNNZM71.195 其他感染粘液囊炎QTGRNYNYM71.261 腘窝[贝克]囊肿NXCSYM71.321 肘窝囊肿ZWNZM71.391 滑膜囊肿在其他方面未特指HMNZM71.395 滑囊粘液囊肿HNNYNZM71.495 粘液囊钙沉着NYNGCZM71.895 其他特指粘液囊病QTTZNYNBM71.991 滑囊炎在其他方面未特指 HNYM71.995 粘液囊炎NYNYM72.041 掌筋膜挛缩症ZJMLSZM72.045 掌(筋膜)纤维瘤病[迪皮特朗] ZJMXWLBDPTLM72.145 指节垫ZJDM72.275 跖筋膜纤维瘤病ZJMXWLBM72.276 跖筋膜炎ZJMYM72.391 结节性筋膜炎JJXJMYM72.495 增殖性皮下假肉瘤性纤维瘤病ZZXPXJRLXXWLB M72.591 筋膜炎 NEC JMYM72.592 硬化性筋膜炎YHXJMYM72.895 其他成纤维细胞疾患QTCXWXBJHM72.991 纤维瘤病XWLBM72.995 成纤维细胞疾患在其他方面未特指 CXWXBJH M75.011 肩关节周围炎JGJZWYM75.015 粘连性肩周炎NLXJZYM75.016 粘连性肩关节囊炎NLXJGJNYM75.017 冻结肩DJJM75.225 肱二头肌腱炎GETJJYM75.315 肩钙化性肌腱炎JGHXJJYM75.415 肩碰撞综合征JPZZHZM75.515 肩粘液囊炎JNYNYM75.815 其他肩损害QTJSHM75.915 肩损害在其他方面未特指 JSHM76.055 臀肌腱炎TJJYM76.185 腰肌腱炎YJJYM76.255 髂骨嵴骨刺QGJGCM76.281 髂胫束挛缩QJSLSM76.305 髂胫带综合征QJDZHZM76.465 胫骨侧粘液囊炎[佩莱格里尼-施蒂达] JGCNYNYPLGLNSDD M76.565 髌骨肌腱炎BGJJYM76.671 跟腱滑囊炎GJHNYM76.675 跟腱炎[艾伯特综合征] GJYABTZHZM76.676 跟腱粘液囊炎GJNYNYM76.765 腓侧肌腱炎FCJJYM76.865 胫前综合征JQZHZM76.866 胫后肌腱炎JHJJYM76.885 下肢其他肌腱端病,不包括足XZQTJJDBBBKZM76.985 下肢肌腱端病在其他方面未特指XZJJDB M77.025 内侧上髁炎(肘) NCSKYZM77.121 网球肘WQZM77.125 外侧上髁炎(肘) WCSKYZM77.126 肘部肌腱炎ZBJJYM77.231 腕关节周围炎WGJZWYM77.375 跟骨骨刺GGGCM77.475 跖骨痛ZGTM77.575 踝和跗骨肌腱端病HHFGJJDBM77.576 足肌腱端病ZJJDBM77.825 肘部肌腱端病ZBJJDBM77.835 腕和腕骨肌腱端病WHWGJJDBM77.845 指肌腱炎ZJJYM77.991 肌腱端病在其他方面未特指JJDBM77.995 关节周围炎在其他方面未特指 GJZWYM77.996 骨刺在其他方面未特指GCM77.997 关节囊炎在其他方面未特指GJNYM79.011 肩部纤维织炎JBXWZYM79.091 风湿病在其他方面未特指 FSBM79.092 关节风湿病GJFSBM79.093 纤维结缔组织炎XWJDZZYM79.094 风湿性肌痛症FSXJTZM79.095 纤维织炎XWZYM79.096 软组织风湿RZZFSM79.097 肌纤维腱鞘炎JXWJQYM79.191 肌痛JTM79.291 神经痛和神经炎SJTHSJYM79.295 肌神经痛JSJTM79.296 神经肌炎SJJYM79.391 结节性非化脓性脂膜炎JJXFHNXZMY M79.392 脂膜炎在其他方面未特指 ZMYM79.465 脂肪垫肥大(髌下的) ZFDFDBXDM79.591 软组织内残留异物RZZNCLYWM79.665 膝关节疼痛综合征XGJTTZHZM79.681 肢体疼痛ZTTTM79.871 拇(足)指囊肿MZZNZ M79.881 肢体肿胀ZTZZM79.891 脂肪疝ZFSM79.892 脂肪坏死ZFHSM79.893 脂肪萎缩ZFWSM79.981 肢体肿物ZTZW。
零刻eq59参数
零刻EQ59的详细参数如下:
CPU频率:2GHz。
核心/线程数:四核心/四线程。
内存类型:DDR4 2933MHz。
硬盘容量:512GB。
显卡类型:集成显卡。
显存容量:共享内存容量。
产品类型:家用迷你电脑。
操作系统:预装Windows 10 Home Basic 64bit(64位家庭普通版)。
处理器:Intel 赛扬四核 N5105。
CPU主频:2GHz。
最高睿频:。
缓存:L3 4MB。
内存容量:8GB。
最大内存容量:16GB。
有线网卡:1000Mbps以太网卡。
无线网卡:WiFi5。
数据接口:前置面板2×,1×USB Type-C;后置面板2×。
音频接口:1×耳机/麦克风两用接口。
视频接口:1×HDMI。
网络接口:1×RJ45(网络接口)。
其它接口:1×电源接口。
机箱类型:卧式。
机箱颜色:黑色。
机箱尺寸:124×113×42mm。
以上参数仅供参考,如需了解更准确的信息,请查看零刻EQ59的官方网站或咨询专业人士。
微机电动机保护监控装置HUAJIAN 上海华建电力设备有限公司致力于电气自动化技术的研究与发展目录1概述 (1)1.1产品特点 (1)1.2主要功能 (1)1.3型号说明 (2)1.4功能配置 (2)2 技术数据……………………………………………………………………2.1 输入/输出………………………………………………………………….2 环境条件……………………………………………………………………2.3 电气试验…………………………………………………………………3 设备安装图3.1 装置本体外型尺寸图3.2 精密电流互感器外型及安装图3.3 板端子图…………………………………………………………………3.4 端子定义…………………………………………………………………4 输入、输出功能………………………………………………………………4.1 模拟量输入…………………………………………………………………4.2 开关量输入…………………………………………………………………4.3 输出继电器…………………………………………………………………4.4 电力变送输出………………………………………………………………4.5 辅助电源…………………………………………………………………4.6 串行通讯……………………………………………………………………5 电动机保护和控制功能………………………………………………………5.1 热过载保护…………………………………………………………………5.2 堵转保护……………………………………………………………………5.3 TE时间保护(适用于增安型防爆电动机)………………………………5.4 启动时间过长保护…………………………………………………………5.5 单相接地保护………………………………………………………………5.6 断相保护……………………………………………………………………5.7 电流不平衡保护……………………………………………………………5,8 欠电流保护……………………………………………………………5.9 低电压保护………………………………………………………………5.10 工艺联锁保护………………………………………………………………5.11 再起动功能…………………………………………………………………5.12 电动机起停控制……………………………………………………………5.13 报警继电器………………………………………………………………6 面板显示和操作设定…………………………………………………………6.1 操作面板……………………………………………………………………6.2 实时测量显示………………………………………………………………6.3 参数设定……………………………………………………………………7 信号处理…………………………………………………………………7.1 信号灯……………………………………………………………………7.2 跳闸报警窗口……………………………………………………………………7.3 记录查询……………………………………………………………………8 装置接线图……………………………………………………………………9 通讯连接……………………………………………………………………10 低压综合保护装置网络连接图………………………………………………11 定货须知……………………………………………………………………12 附表一 TE时间保护特性表………………………………………………13 附表二电动机热保护动作特性K=1…………………………………………14 附表三电动机热保护动作特性K=0.5………………………………………1概述LM-500、LM-510系列微机电动机保护监控装置适用于660V及以下低压系统,作为低压电动机馈线终端的保护、监测和控制的新一代智能化综合装置。
LM5105100V Half Bridge Gate Driver with Programmable Dead-timeGeneral DescriptionThe LM5105is a high voltage gate driver designed to drive both the high side and low side N –Channel MOSFETs in a synchronous buck or half bridge configuration.The floating high-side driver is capable of working with rail voltages up to 100V.The single control input is compatible with TTL signal levels and a single external resistor programs the switching transition dead-time through tightly matched turn-on delay circuits.A high voltage diode is provided to charge the high side gate drive bootstrap capacitor.The robust level shift technology operates at high speed while consuming low power and provides clean output transitions.Under-voltage lockout disables the gate driver when either the low side or the bootstrapped high side supply voltage is below the op-erating threshold.The LM5105is offered in the thermally enhanced 10-pin LLP plastic package.Featuresn Drives both a high side and low side N-channel MOSFETn 1.8A peak gate drive currentn Bootstrap supply voltage range up to 118V DC n Integrated bootstrap diode n Single TTL compatible Inputn Programmable turn-on delays (Dead-time)n Enable Input pinn Fast turn-off propagation delays (26ns typical)n Drives 1000pF with 15ns rise and fall time n Supply rail under-voltage lockout nLow power consumptionTypical Applicationsn Solid State motor drivesn Half and Full Bridge power converters n Two switch forward power convertersPackagen LLP-10(4mm x 4mm)Simplified Block Diagram20137502FIGURE 1.February 2005LM5105100V Half Bridge Gate Driver with Programmable Dead-time©2005National Semiconductor Corporation Connection Diagram2013750110-Lead LLPSee NS Number SDC10AOrdering InformationOrdering Number Package TypeNSC Package DrawingSupplied AsLM5105SD LLP-10SDC10A 1000shipped as Tape &Reel LM5105SDXLLP-10SDC10A4500shipped as Tape &ReelPin DescriptionsPin Name DescriptionApplication Information1V DD Positive gate drive supply Decouple VDD to VSS using a low ESR/ESL capacitor,placed as close to the IC as possible.2HBHigh side gate driver bootstrap rail Connect the positive terminal of bootstrap capacitor to the HB pin and connect negative terminal to HS.The Bootstrap capacitor should be placed as close to IC as possible.3HO High side gate driver outputConnect to the gate of high side N-MOS device through a short,low inductance path.4HS High side MOSFET source connection Connect to the negative terminal of the bootststrap capacitor and to the source of the high side N-MOS device.5NC Not Connected6RDTDeadtime programming pinA resistor from RDT to VSS programs the turn-on delay of both the high and low side MOSFETs.The resistor should be placed close to the IC to minimize noise coupling from adjacent PC board traces.7EN Logic input for driver Disable/EnableTTL compatible threshold with hysteresis.LO and HO are held in the low state when EN is low.8IN Logic input for gate driver TTL compatible threshold with hysteresis.The high side MOSFET is turned on and the low side MOSFET turned off when IN is high.9V SS Ground returnAll signals are referenced to this ground.10LOLow side gate driver outputConnect to the gate of the low side N-MOS device with a short,low inductance path.L M 5105 2Absolute Maximum Ratings(Note1)If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications.V DD to V SS–0.3V to+18VHB to HS–0.3V to+18VIN and EN to V SS–0.3V to V DD+0.3VLO to V SS–0.3V to V DD+0.3VHO to V SS HS–0.3V to HB+0.3VHS to V SS(Note6)−5V to+100VHB to V SS118VRDT to V SS–0.3V to5VJunction Temperature+150˚CStorage Temperature Range–55˚C to+150˚C ESD Rating HBM(Note2)2kVRecommended Operating ConditionsV DD+8V to+14V HS(Note6)–1V to100V HB HS+8V to HS+14V HS Slew Rate<50V/ns Junction Temperature–40˚C to+125˚CElectrical Characteristics Specifications in standard typeface are for TJ=+25˚C,and those in boldfacetype apply over the full operating junction temperature range.Unless otherwise specified,V DD=HB=12V,V SS=HS=0V,EN=5V.No load on LO or HO.RDT=100kΩ(Note4).Symbol Parameter Conditions Min Typ Max Units SUPPLY CURRENTSI DD V DD Quiescent Current IN=EN=0V0.340.6mAI DDO V DD Operating Current f=500kHz 1.653mAI HB Total HB Quiescent Current IN=EN=0V0.060.2mAI HBO Total HB Operating Current f=500kHz 1.33mAI HBS HB to V SS Current,Quiescent HS=HB=100V0.0510µAI HBSO HB to V SS Current,Operating f=500kHz0.1mAINPUT IN and ENV IL Low Level Input Voltage Threshold0.8 1.8VV IH High Level Input Voltage Threshold 1.8 2.2VR pd Input Pulldown Resistance Pin IN and EN100200500kΩDEAD-TIME CONTROLSVRDT Nominal Voltage at RDT 2.73 3.3VIRDT RDT Pin Current Limit RDT=0V0.75 1.5 2.25mA UNDER VOLTAGE PROTECTIONV DDR V DD Rising Threshold 6.0 6.97.4VV DDH V DD Threshold Hysteresis0.5VV HBR HB Rising Threshold 5.7 6.67.1VV HBH HB Threshold Hysteresis0.4VBOOT STRAP DIODEV DL Low-Current Forward Voltage I VDD-HB=100µA0.60.9VV DH High-Current Forward Voltage I VDD-HB=100mA0.85 1.1VR D Dynamic Resistance I VDD-HB=100mA0.8 1.5ΩLO GATE DRIVERV OLL Low-Level Output Voltage I LO=100mA0.250.4VV OHL High-Level Output Voltage I LO=–100mA,V OHL=V DD–V LO0.350.55VI OHL Peak Pullup Current LO=0V 1.8AI OLL Peak Pulldown Current LO=12V 1.6AHO GATE DRIVERV OLH Low-Level Output Voltage I HO=100mA0.250.4VV OHH High-Level Output Voltage I HO=–100mA,V OHH=HB–HO0.350.55VI OHH Peak Pullup Current HO=0V 1.8ALM51053Electrical Characteristics Specifications in standard typeface are for T J =+25˚C,and those in boldface typeapply over the full operating junction temperature range .Unless otherwise specified,V DD =HB =12V,V SS =HS =0V,EN =5V.No load on LO or HO.RDT=100k Ω(Note 4).(Continued)Symbol ParameterConditionsMinTyp MaxUnits I OLH Peak Pulldown CurrentHO =12V1.6ATHERMAL RESISTANCEθJAJunction to Ambient(Note 3),(Note 5)40˚C/WSwitching CharacteristicsSpecifications in standard typeface are for T J =+25˚C,and those in boldfacetype apply over the full operating junction temperature range .Unless otherwise specified,V DD =HB =12V,V SS =HS =0V,No Load on LO or HO (Note 4).Symbol ParameterConditionsMinTyp Max Units t LPHL Lower Turn-Off Propagation Delay 2656ns t HPHL Upper Turn-Off Propagation Delay 2656ns t LPLH Lower Turn-On Propagation Delay RDT =100k 485595705ns t HPLH Upper Turn-On Propagation Delay RDT =100k 485595705ns t LPLH Lower Turn-On Propagation Delay RDT =10k 75105150ns t HPLH Upper Turn-On Propagation Delay RDT =10k75105150ns t en ,t sd Enable and Shutdown propagation delay 28ns DT1,DT2Dead-time LO OFF to HO ON &HO OFF to LO ONRDT =100k 570µsRDT =10k 80MDT Dead-time matching RDT =100k 50t R ,t F Either Output Rise/Fall TimeC L =1000pF15t BSBootstrap Diode Turn-On or Turn-Off TimeI F =20mA,I R =200mA 50nsNote 1:Absolute Maximum Ratings indicate limits beyond which damage to the component may occur.Operating Ratings are conditions under which operation of the device is guaranteed.Operating Ratings do not imply guaranteed performance limits.For guaranteed performance limits and associated test conditions,see the Electrical Characteristics tables.Note 2:The human body model is a 100pF capacitor discharged through a 1.5k Ωresistor into each pin.Pin 2,Pin 3and Pin 4are rated at 500V.Note 3:4layer board with Cu finished thickness 1.5/1.0/1.0/1.5oz.Maximum die size used.5x body length of Cu trace on PCB top.50x 50mm ground and power planes embedded in PCB.See Application Note AN-1187.Note 4:Min and Max limits are 100%production tested at 25˚C.Limits over the operating temperature range are guaranteed through correlation using Statistical Quality Control (SQC)methods.Limits are used to calculate National’s Average Outgoing Quality Level (AOQL).Note 5:The θJA is not a constant for the package and depends on the printed circuit board design and the operating conditions.Note 6:In the application the HS node is clamped by the body diode of the external lower N-MOSFET,therefore the HS voltage will generally not exceed -1V.However in some applications,board resistance and inductance may result in the HS node exceeding this stated voltage transiently.If negative transients occur on HS,the HS voltage must never be more negative than V DD -15V.For example,if V DD =10V,the negative transients at HS must not exceed -5V.L M 5105 4Typical Performance CharacteristicsV DD Operating Current vs Frequency Operating Current vs Temperature2013751020137511 Quiescent Current vs Supply Voltage Quiescent Current vs Temperature2013751220137513 HB Operating Current vs Frequency HO&LO Peak Output Current vs Output Voltage2013751620137517LM51055Typical Performance Characteristics(Continued)Diode Forward VoltageUndervoltage Hysteresis vs Temperature2013751520137518Undervoltage Rising Threshold vs Temperature LO &HO -High Level Output Voltage vs Temperature2013751920137520LO &HO -Low Level Output Voltage vs Temperature Input Threshold vs Temperature2013752120137522L M 5105 6Typical Performance Characteristics(Continued)Dead-Time vs RT Resistor ValueDead-Time vs Temperature (RT =10k)2013751420137526Dead-Time vs Temperature (RT =100k)20137527LM51057Timing DiagramsOperational NotesThe LM5105is a single PWM input Gate Driver with Enable that offers a programmable deadtime.The deadtime is set with a resistor at the RDT pin and can be adjusted from 100ns to 600ns.The wide deadtime programming range provides the flexibility to optimize drive signal timing for a wide range of MOSFETS and applications.The RDT pin is biased at 3V and current limited to 1mA maximum programming current.The time delay generator will accommodate resistor values from 5k to 100k with a deadtime time that is proportional to the RDT resistance.Grounding the RDT pin programs the LM5105to drive both outputs with minimum deadtime.STARTUP AND UVLOBoth top and bottom drivers include under-voltage lockout (UVLO)protection circuitry which monitors the supply volt-age (V DD )and bootstrap capacitor voltage (HB –HS)inde-pendently.The UVLO circuit inhibits each driver until suffi-cient supply voltage is available to turn-on the external MOSFETs,and the UVLO hysteresis prevents chattering during supply voltage transitions.When the supply voltage is applied to the V DD pin of LM5105,the top and bottom gates are held low until V DD exceeds the UVLO threshold,typically about 6.9V.Any UVLO condition on the bootstrap capacitor will disable only the high side output (HO).20137503LM5105Input -Output WaveformsFIGURE 2.20137504LM5105Switching Time Definitions:t LPLH ,t LPHL ,t HPLH ,t HPHLFIGURE 3.20137530LM5105Enable:t sdFIGURE 4.20137531LM5105Dead-time:DTFIGURE 5.L M 5105 8Operational Notes(Continued)LAYOUT CONSIDERATIONSThe optimum performance of high and low side gate drivers cannot be achieved without taking due considerations during circuit board layout.Following points are emphasized.1.A low ESR/ESL capacitor must be connected close tothe IC,and between V DD and V SS pins and between HB and HS pins to support high peak currents being drawn from V DD during turn-on of the external MOSFET.2.To prevent large voltage transients at the drain of the topMOSFET,a low ESR electrolytic capacitor must be con-nected between MOSFET drain and ground(V SS).3.In order to avoid large negative transients on the switchnode(HS)pin,the parasitic inductances in the source of top MOSFET and in the drain of the bottom MOSFET (synchronous rectifier)must be minimized.4.Grounding considerations:a)The first priority in designing grounding connections isto confine the high peak currents from charging and discharging the MOSFET gate in a minimal physical area.This will decrease the loop inductance and mini-mize noise issues on the gate terminal of the MOSFET.The MOSFETs should be placed as close as possible to the gate driver.b)The second high current path includes the bootstrapcapacitor,the bootstrap diode,the local ground refer-enced bypass capacitor and low side MOSFET body diode.The bootstrap capacitor is recharged on the cycle-by-cycle basis through the bootstrap diode from the ground referenced V DD bypass capacitor.The re-charging occurs in a short time interval and involves high peak current.Minimizing this loop length and area on the circuit board is important to ensure reliable operation.5.The resistor on the RDT pin must be placed very close tothe IC and seperated from high current paths to avoid noise coupling to the time delay generator which could disrupt timer operation.POWER DISSIPATION CONSIDERATIONSThe total IC power dissipation is the sum of the gate driverlosses and the bootstrap diode losses.The gate driverlosses are related to the switching frequency(f),output loadcapacitance on LO and HO(C L),and supply voltage(V DD)and can be roughly calculated as:P DGATES=2•f•C L•V DD2There are some additional losses in the gate drivers due tothe internal CMOS stages used to buffer the LO and HOoutputs.The following plot shows the measured gate driverpower dissipation versus frequency and load capacitance.Athigher frequencies and load capacitance values,the powerdissipation is dominated by the power losses driving theoutput loads and agrees well with the above equation.Thisplot can be used to approximate the power losses due to thegate drivers.Gate Driver Power Dissipation(LO+HO)V CC=12V,Neglecting Diode Losses20137505 The bootstrap diode power loss is the sum of the forwardbias power loss that occurs while charging the bootstrapcapacitor and the reverse bias power loss that occurs duringreverse recovery.Since each of these events happens onceper cycle,the diode power loss is proportional to frequency.Larger capacitive loads require more current to recharge thebootstrap capacitor resulting in more losses.Higher inputvoltages(V IN)to the half bridge result in higher reverserecovery losses.The following plot was generated based oncalculations and lab measurements of the diode recoverytime and current under several operating conditions.Thiscan be useful for approximating the diode power dissipation.LM51059Operational Notes(Continued)Diode Power Dissipation V IN =80V20137506Diode Power Dissipation V IN =40V20137507The total IC power dissipation can be estimated from the above plots by summing the gate drive losses with the bootstrap diode losses for the intended application.Because the diode losses can be significant,an external diode placed in parallel with the internal bootstrap diode (refer to Figure 6)and can be helpful in removing power from the IC.For this to be effective,the external diode must be placed close to the IC to minimize series inductance and have a significantly lower forward voltage drop than the internal diode.HS Transient Voltages Below GroundThe HS node will always be clamped by the body diode of the lower external FET.In some situations,board resis-tances and inductances can cause the HS node to tran-siently swing several volts below ground.The HS node can swing below ground provided:1.HS must always be at a lower potential than HO.Pulling HO more than -0.3V below HS can activate parasitic transistors resulting in excessive current to flow from the HB supply possibly resulting in damage to the IC.The same relationship is true with LO and VSS.If necessary,a Schottky diode can be placed externally between HO and HS or LO and GND to protect the IC from this type of transient.The diode must be placed as close to the IC pins as possible in order to be effective.2.HB to HS operating voltage should be 15V or less .Hence,if the HS pin transient voltage is -5V,VDD should be ideally limited to 10V to keep HB to HS below 15V.3.A low ESR bypass capacitor between HB to HS as wellas VCC to VSS is essential for proper operation.The capacitor should be located at the leads of the IC to minimize series inductance.The peak currents from LO and HO can be quite large.Any series inductances with the bypass capacitor will cause voltage ringing at the leads of the IC which must be avoided for reliable op-eration.L M 5105 10LM5105 Operational Notes(Continued)LM5105Driving MOSFETs Connected in Half-Bridge Configuration Array20137508FIGURE6.11Physical Dimensionsinches (millimeters)unless otherwise notedNotes:Unless otherwise specified1.Standard lead finish to be 200microinches/5.00micrometers minimum tin/lead (solder)on copper.2.Pin 1identification to have half of full circle option.3.No JEDEC registration as of Feb.2000.LLP-10Outline Drawing NS Package Number SDC10ANational does not assume any responsibility for use of any circuitry described,no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.For the most current product information visit us at .LIFE SUPPORT POLICYNATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT AND GENERAL COUNSEL OF NATIONAL SEMICONDUCTOR CORPORATION.As used herein:1.Life support devices or systems are devices or systems which,(a)are intended for surgical implant into the body,or (b)support or sustain life,and whose failure to perform when properly used in accordance with instructions for use provided in the labeling,can be reasonably expected to result in a significant injury to the user.2.A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system,or to affect its safety or effectiveness.BANNED SUBSTANCE COMPLIANCENational Semiconductor certifies that the products and packing materials meet the provisions of the Customer Products Stewardship Specification (CSP-9-111C2)and the Banned Substances and Materials of Interest Specification (CSP-9-111S2)and contain no ‘‘Banned Substances’’as defined in CSP-9-111S2.National Semiconductor Americas Customer Support CenterEmail:new.feedback@ Tel:1-800-272-9959National SemiconductorEurope Customer Support CenterFax:+49(0)180-5308586Email:europe.support@Deutsch Tel:+49(0)6995086208English Tel:+44(0)8702402171Français Tel:+33(0)141918790National Semiconductor Asia Pacific Customer Support CenterEmail:ap.support@National SemiconductorJapan Customer Support Center Fax:81-3-5639-7507Email:jpn.feedback@ Tel:81-3-5639-7560L M 5105100V H a l f B r i d g e G a t e D r i v e r w i t h P r o g r a m m a b l e D e a d -t i m e。
低档运放JRC4558。
这种运放是低档机器使用得最多的。
现在被认为超级烂,因为它的声音过于明亮,毛刺感强,所以比起其他的音响用运放来说是最差劲的一种。
不过它在我国暂时应用得还是比较多的,很多的四、五百元的功放还是选择使用它,因为考虑到成本问题和实际能出的效果,没必要选择质量超过5532以上的运放。
对于一些电脑有源音箱来说,它的应付能力还是绰绰有余的。
运放之皇5532。
如果有谁还没有听说过它名字的话,那就还未称得上是音响爱好者。
这个当年有运放皇之称的NE5532,与LM833、LF353、CA3240一起是老牌四大名运放,不过现在只有5532应用得最多。
5532现在主要分开台湾、美国和PHILIPS生产的,日本也有。
5532原来是美国SIGNE公司的产品,所以质量最好的是带大S标志的美国产品,市面上要正宗的要卖8元以上,自从SIGNE被PHILIPS 收购后,生产的5532商标使用的都是PHILIPS商标,质量和原品相当,只须4-5元。
而台湾生产的质量就稍微差一些,价格也最便,两三块便可以买到了。
NE5532的封装和4558一样,都是DIP8脚双运放(功能引脚见图),声音特点总体来说属于温暖细腻型,驱动力强,但高音略显毛糙,低音偏肥。
以前不少人认为它有少许的“胆味”,不过现在比它更有胆味的已有不少,相对来说就显得不是那么突出了。
5532的电压适应范围非常宽,从正负3V至正负20V都能正常工作。
它虽然是一个比较旧的运放型号,但现在仍被认为是性价比最高的音响用运放。
是属于平民化的一种运放,被许多中底档的功放采用。
不过现在有太多的假冒NE5532,或非音频用的工业用品,由于5532的引脚功能和4558的相同,所以有些不良商家还把4558擦掉字母后印上5532字样充当5532,一般外观粗糙,印字易擦掉,有少许经验的人也可以辨别。
据说有8mA的电流温热才是正宗的音频用5532。
NE5532还有两位兄弟NE5534和NE5535。
循环冷却水的水质标准表注:甲基橙碱度以碳酸钙计;硅酸以二氧化硅计;镁离子以碳酸钙计。
3.1.8密闭式系统循环冷却水的水质标准应根据生产工艺条件确定;3.1.9敞开式系统循环冷却水的设计浓缩倍数不宜小于3.0.浓缩倍数可按下式计算:N=Q M/Q H+Q W (3.1.9)式中 N 浓缩倍数;Q M 补充水量((M3/H);Q H 排污水量((M3/H);Q W风吹损失水量(M3/H).3.1.10敞开式系统循环冷却水中的异养菌数宜小于5×105个/ML粘泥量宜小于4ML/M3;表10-3锅炉加药水处理时的水质标准表10-4蒸汽锅炉采用锅外化学水处理时的水质标准表10-5热水锅炉水质标准以符号N表示,定义为每升溶液中所含溶质的克当量数,或每毫升溶液中所含溶质的毫克当量数。
由当量浓度的定义可知,NV(L)=克当量数;NV(mL)=毫克当量数,即任何溶液中所含溶质的克当量数等于该溶液的当量浓度乘以溶液的体积(L)。
将N2V1=N2V2称为当量定律。
但是以上概念现已不能使用,而用物质的量n和含有物质的量的导出量;摩尔质量M,物质的量浓度c等法定的量和单位代替。
离子毫克当量浓度一、毫克当量(mEq)表示某物质和1mg氢的化学活性或化合力相当的量。
1mg氢,23mg钠,39mg钾,20mg钙和35mg氯都是1mEq。
其换算公式如下:mEq/L=(mg/L)×原子价/化学结构式量mg/L=(mEq/L)×化学结构式量/原子价mg/L=mmol/l×化学结构式量所以mEq/L=mmol/L×原子价(注:化学结构式量=原子量或分子量)二、各种离子浓度单位的换算1、离子的毫克当量浓度(meq/L)离子的毫克浓度(mg/L)离子毫克当量浓度(meq/L)=离子的毫克当量毫克当量不是质量的名称,它和摩尔浓度也是不一样的,需要搞清楚不同概念。
不然会出错的。
不过现在基本上已经不再使用毫克当量,基本上使用国际单位,所以现在一般都是使用摩尔浓度水硬度单位定义及换算时间:2010-11-07 15:43:04 来源:作者:人气:390 次-水硬度的单位常用的有mmol/L或mg/L。
国籍代码SERIAL_NO COUNTRY_CODE COUNTRY_NAME INPUT_CODE INPUT_CODE_WB 11AO安哥拉AGL PSR 22AF阿富汗AFH BPI33AL阿尔巴尼亚AEBNY BQCNG44DZ阿尔及利亚AEJLY BQETG55AD安道尔共和国ADEGHG PUQATL66AI安圭拉岛AGLD PFRQ77AG安提⽠和巴布达ATGHBBD PRRTCDD88AR阿根廷AGT BSW99AM亚美尼亚YMNY GUNG1010AC阿森松ASS BSS1111AU澳⼤利亚ADLY IDTG1212AT奥地利ADL TFT1313AZ阿塞拜疆ASBJ BPDX1414BS巴哈马BHM CKC1515BH巴林BL CS1616BD孟加拉国MJLG BLRL1717BB巴巴多斯BBDS CCQA1818BY⽩俄罗斯BELS RWLA1919BE⽐利时BLS XTJ2020BZ伯利兹BLZ WTU2121BJ贝宁BN MP2222BM百慕⼤群岛BMDQD DADVQ2323BO玻利维亚BLWY GTXG2424BW博茨⽡纳BCWN FAGX2525BR巴西BX CS2626BN⽂莱WL YA2727BG保加利亚BJLY WLTG2828BF布基纳法索BJNFS DAXIF2929MM缅甸MD XQ3030BI布隆迪BLD DBM3131CM喀麦隆KML KGB3232CA加拿⼤JND LWD3333KY开曼群岛KMQD GJVQ3434CF中⾮共和国ZFGHG KDATL3535TD乍得ZD TT3636CL智利ZL TT3737CN中国ZG KL3838CO哥伦⽐亚GLBY SWXG3939CG刚果GG MJ4040CK库克群岛KKQD YFVQ4141CR哥斯达黎加GSDLJ SADTL4242CU古巴GB DC4343CY塞浦路斯SPLS PIKA4444CZ捷克JK RF4545DK丹麦DM EG4646DJ吉布提JBT FDR4747DO多⽶尼加共和国DMNJGHG QONLATL 4848EC厄⽠多尔EGDE DRQQ4949EG埃及AJ FE5050SV萨尔⽡多SEWD AQGQ5151EE爱沙尼亚ASNY EING5252ET埃塞俄⽐亚ASEBY FPWXG5353FJ斐济FJ DI5454FI芬兰FL AU5555FR法国FG IL5656GF法属圭亚那FSGYN INFGV5757GA加蓬JP LA5858GM冈⽐亚GBY MXG5959GE格鲁吉亚GLJY SQFG6060DE德国DG TL6161GH加纳JN LX6262GI直布罗陀ZBLT FDLB6363GR希腊XL QE6464GD格林纳达GLND SSXD6565GU关岛GD UQ6666GT危地马拉WDML QFCR6767GN⼏内亚JNY MMG6868GY圭亚那GYN FGV6969HT海地HD IF7070HN洪都拉斯HDLS IFRA7171HU匈⽛利XYL QAT7272IS冰岛BD UQ7373IN印度YD QY7474ID印度尼西亚YDNXY QYNSG 7575IR伊朗YL WY7676IQ伊拉克YLK WRF7777IE爱尔兰AEL EQU7878IL以⾊列YSL CQG7979IT意⼤利YDL UDT8080KT科特迪⽡KTDW TTMG 8181JM⽛买加YMJ ANL8282JP⽇本RB JS8383JO约旦YD XJ8484KH柬埔寨JPZ GFP8585KZ哈萨克斯坦HSKST KAFAF 8686KE肯尼亚KNY HNG8787KR韩国HG FL8888KW科威特KWT TDT8989KG吉尔吉斯坦JEJST FQFAF 9090LA⽼挝LW FR9191LV拉脱维亚LTWY REXG 9292LB黎巴嫩LBN TCV9393LS莱索托LST AFR9494LR利⽐⾥亚LBLY TXJG 9595LY利⽐亚LBY TXG9696LI列⽀敦⼠登LZDSD GFYFW 9797LT⽴陶宛LTW UBP9898LU卢森堡LSB HSW9999MG马达加斯加MDJSJ CDLAL 100100MW马拉维MLW CRX 101101MY马来西亚MLXY CGSG 102102MV马尔代夫MEDF CQWF 103103ML马⾥ML CJ 104104MT马⽿他MET CBW 105105MQ马提尼克MTNK CRNF 106106MU⽑⾥求斯MLQS TJFA 107107MX墨西哥MXG LSS 108108MD摩尔多⽡MEDW YQQG 109109MC摩纳哥MNG YXS 110110MN蒙古MG AD 111111MS蒙特塞拉特岛MTSLTD ATPRTQ 112112MA摩洛哥MLG YIS 113113MZ莫桑⽐克MSBK ACXF 114114NA 纳⽶⽐亚NMBY XOXG 115115NR瑙鲁NL GQ 116116NP尼泊尔NBE NIQ 117117AN荷属安的列斯HSADLS ANPRGA 118118NL荷兰HL AU 119119NZ新西兰XXL USU 120120NI尼加拉⽠NJLG NLRR 121121NE尼⽇尔NRE NJQ 122122NG尼⽇利亚NRLY NJTG 123123KP朝鲜CX FQ 124124NO挪威NW RD 125125OM阿曼AM BJ 126126PK巴基斯坦BJST CAAF 127127PA巴拿马BNM CWC 128128PG巴布亚新⼏内亚BBYXJNY CDGUMMG 129129PY巴拉圭BLG CRF 130130PE秘鲁ML TQ 131131PH菲律宾FLB ATP 132132PL波兰BL IU133133PF法属玻利尼西亚FSBLNXY INGTNSG 134134PT葡萄⽛PTY AAA 135135PR波多黎各BDLG IQTT136136QA卡塔尔KTE HFQ 137137RE留尼旺LNW QNJ 138138RO罗马尼亚LMNY LCNG 139139RU俄罗斯ELS WLA 140140VC圣⽂森特岛SWSTD CYSTQ 141141AS东萨摩亚(美)DSMYM AAYGU 142142WS西萨摩亚XSMY SAYG 143143SM圣马⼒诺SMN CCY 144144ST圣多美和普林西⽐SDMHPLXB CQUTUSSX 145145SA沙特阿拉伯STALB ITBRW 146146SN塞内加尔SNJE PMLQ 147147SC塞⾆尔SSE PTQ 148148SL塞拉利昂SLLA PRTJ 149149SG新加坡XJP ULF 150150SK斯洛伐克SLFK AIWF 151151SI斯洛⽂尼亚SLWNY AIYNG 152152SB所罗门群岛SLMQD RLUVQ 153153SO索马⾥SML FCJ 154154ZA南⾮NF FD155155ES西班⽛XBY SGA 156156LK斯⾥兰卡SLLK AJUH 157157LC圣卢西亚SLXY CHSG 158158SD苏丹SD AE 159159SS南苏丹NSD FAE 160160SR苏⾥南SLN AJF 161161SZ斯威⼠兰SWSL ADFU 162162SE瑞典RD GM 163163CH 瑞⼠RS GF164164SY叙利亚XLY WTG 165165TJ塔吉克斯坦TJKST FFFAF 166166TZ坦桑尼亚TSNY FCNG 167167TH泰国TG DL 168168TG多哥DG QS169169TO汤加TJ IL170170TT特⽴尼达和多巴哥TLNDHDBG TUNDTQCS 171171TN突尼斯TNS PNA 172172TR⼟⽿其TEQ FBA 173173TM⼟库曼斯坦TKMST FYJAF 174174UG乌⼲达WGD QFD 175175UA乌克兰WKL QFU 176176AE阿拉伯联合酋长国ALBLHQCG BRWBWUTL 177177GB英国YG AL178178US美国MG UL179179UY乌拉圭WLG QRF 180180UZ乌兹别克斯坦WZBKST QUKFAF 181181VE委内瑞拉WNRL TMGR 182182VN越南YN FF183183YE也门YM BU184184YU南斯拉夫NSLF FARF 185185ZW津巴布韦JBBW ICDF 186186CD刚果民主共和国GGMZGHG MJNYATL 187187ZM赞⽐亚ZBY TXG。
常用运放芯片运放芯片是一种具有高增益、宽带宽和低功耗的集成电路。
它广泛应用于各种电子设备中,例如放大器、滤波器、模拟计算器、传感器接口等。
常用的运放芯片有很多种,本文将介绍一些常用的运放芯片。
1. LM741:LM741是一种经典的运放芯片,是全球最常用的运放芯片之一。
它具有高增益、宽带宽和低噪声等特点,广泛应用于放大电路和滤波器等领域。
然而,LM741也有一些缺点,例如工作电压范围窄、输入输出阻抗高等。
2. TL082:TL082是一种双运放芯片,具有四个运算放大器,广泛应用于音频放大器和滤波器等领域。
它具有宽带宽、低失真和低功耗等特点,而且价格相对较低,是一种性价比较高的运放芯片。
3. AD620:AD620是一种精密放大器芯片,具有低输入偏置电流和低噪声等特点,可以用于传感器信号放大和测量等应用。
AD620还具有可调增益和温度补偿等功能,适用于多种工作环境。
4. LM358:LM358是一种双运放芯片,具有低功耗和低输入偏置电流等特点,广泛应用于电压比较器、温度测量和信号放大等领域。
LM358的价格低廉,性能稳定,是一种常用的运放芯片。
5. TL074:TL074是一种四运放芯片,具有低功耗和宽带宽等特点,适用于高性能音频放大器和滤波器等应用。
TL074还具有高共模抑制比和低温漂等特性,使其在高精度测量和数据采集中有广泛应用。
6. AD823:AD823是一种超低功耗运放芯片,主要用于心电图(ECG)监测和生物信号放大等应用。
AD823具有低噪声和高共模抑制比,能够提供高质量的生物信号放大,适用于医疗设备和个人健康监测等领域。
以上是一些常用的运放芯片,它们具有不同的特点和应用领域。
根据具体的需求,选择合适的运放芯片可以提高电路性能和系统稳定性。
随着技术的不断进步,新型的运放芯片也将不断涌现,为电子设备提供更高的性能和功能。
冷却水的水质要求介绍为了确保冷却水系统不过早堵塞,推荐使用闭路循环的散热器用冷却水,其水质符合下述水质(A)要求。
如果取自其他水源,冷却水应定期检查,确保其符合(摘自BroomWade无油机手册)定期检查循环水确认其符合水质(A)要求。
对于悬浮机械杂质应≤25 mg/L。
答:空分设备一般用江河湖泊或地下水作为冷却水。
这种水中通常都含有悬浮物(泥沙及其他污物)以及钙、镁等重碳酸盐[-Ca(HCO3)2和Mg(HCO3)2],称为硬水。
悬浮物较多时,易堵塞冷却器的通道、过滤网及阀门等。
钙、镁等重碳酸盐在水温升高时易生成碳酸钙(CaCO3)、碳酸镁(MgCO3)沉淀物,即形成一般所说的水垢。
一般水温在45℃以上就要开始形成水垢,水温越高越易结垢。
水垢附着在冷却器的管壁、氮水预冷器的填料、喷头或筛孔等处,不仅影响换热,降低冷却效果,而且有碍冷却水或空气的流通,严重时会造成设备故障,例如氮水预冷器带水,使蓄冷器(或切换式换热器)冻结。
水垢比较坚硬,附在器壁上不易清除。
因此,冷却水最好是经过软化处理。
采用磁水器进行软化处理较为简便,效果尚可。
清除悬浮物应设置沉淀池。
如果冷却水循环使用,有利于水质的软化,但占地面积较多,基建投资较大。
对压缩机冷却水,温度一般要求不高于28℃,排水温度小于40℃。
对水质要求为:pH值 6.5~8.0悬浮物含量不大于50mg/L暂时硬度不大于17°dH含油量小于5mg/L氯离子(C1-) (质量分数) 小于50×10-6硫酸根(SO4-2) (质量分数) 小于50×10-6氮水预冷系统供排水为独立循环系统。
因为冷却水在塔内温升大,排水温度高,结垢严重,所以要求该系统的补充水尽可能采用低硬度水或软水,其暂时硬度一般应不大于8.5°dH,其他要求与压缩机冷却水相同。
充瓶用高压氧压机气缸的润滑水,应采用蒸馏水或软水。
循环冷却水的水质标准表循环冷却水的水质标准表注:甲基橙碱度以碳酸钙计;硅酸以二氧化硅计;镁离子以碳酸钙计。
中外金属材料牌号对照表七国钢材牌号对照表国内外常用钢钢号对照表钢号中国前苏联美国英国日本法国德国GB ГОСТASTM BS JIS NF DIN08F 08КП 1006 040A04 S09CK C10优08 08 1008 045M10 S9CK C1010F 1010 040A10 XC1010 10 1010,1012 045M10 S10C XC10 C10,CK10质15 15 1015 095M15 S15C XC12 C15,CK1520 20 1020 050A20 S20C XC18 C22,CK2225 25 1025 S25C CK25碳30 30 1030 060A30 S30C XC3235 35 1035 060A35 S35C XC38TS C35,CK3540 40 1040 080A40 S40C XC38H1素45 45 1045 080M46 S45C XC45 C45,CK4550 50 1050 060A52 S50C XC48TS CK53结55 55 1055 070M55 S55C XC5560 60 1060 080A62 S58C XC55 C60,CK6015Mn 15Г1016,1115 080A17 SB46 XC12 14Mn4 构20Mn 20Г1021,1022 080A20 XC1830Mn 30Г1030,1033 080A32 S30C XC3240Mn 40Г1036,1040 080A40 S40C 40M5 40Mn4 钢45Mn 45Г1043,1045 080A47 S45C50Mn 50Г1050,1052 030A52 S53C XC48080M5020Mn2 20Г2 1320,1321 150M19 SMn420 20Mn530Mn2 30Г2 1330 150M28 SMn433H 32M5 30Mn5 合35Mn2 35Г2 1335 150M36 SMn438(H) 35M5 36Mn5 40Mn2 40Г2 1340 SMn443 40M545Mn2 45Г2 1345 SMn443 46Mn7金50Mn2 50Г2 ~55M520MnV 20MnV635SiMn 35CГEn46 37MnSi5结42SiMn 35CГEn46 46MnSi440B TS14B3545B 50B46H构40MnB 50B4045MnB 50B4415Cr 15X 5115 523M15 SCr415(H) 12C3 15Cr3钢20Cr 20X 5120 527A19 SCr420H 18C3 20Cr4 30Cr 30X 5130 530A30 SCr430 28Cr435Cr 35X 5132 530A36 SCr430(H) 32C4 34Cr440Cr 40X 5140 520M40 SCr440 42C4 41Cr445Cr 45X 5145,5147 534A7><99 SCr445 45C438CrSi 38XC12CrMo 12XM 620CR.B 12CD4 13CrMo4415CrMo 15XM A-387Cr . B 1653 STC42 12CD416CrMo44STT42STB42合20CrMo 20XM 4119,4118 CDS12 SCT42 18CD4 20CrMo44CDS110 STT42STB42金25CrMo 4125 En20A 25CD4 25CrMo430CrMo 30XM 4130 1717COS110 SCM420 30CD442CrMo 4140 708A42 42CD4 42CrMo4 结708M4035CrMo 35XM 4135 708A37 SCM3 35CD4 34CrMo412CrMoV 12XMΦ构12Cr1MoV 12X1MΦ13CrMoV4225Cr2Mo1VA 25X2M1ΦA20CrV 20XΦ6120 22CrV4钢40CrV 40XΦA 6140 42CrV650CrVA 50XΦA 6150 735A30 SUP10 50CV4 50CrV415CrMn 15XГ,18XГ20CrMn 20XГCA 5152 527A60 SUP930CrMnSiA 30XГCA40CrNi 40XH 3140H 640M40 SNC236 40NiCr620CrNi3A 20XH3A 3316 20NC11 20NiCr1430CrNi3A 30XH3A 3325 653M31 SNC631H 28NiCr103330 SNC63120MnMoB 80B2038CrMoAlA 38XMIOA 905M39 SACM645 40CAD6.1241CrAlMo0740CrNiMoA 40XHMA 4340 871M40 SNCM43940NiCrMo22弹60 60 1060 080A62 S58C XC55 C6085 85 C1085 080A86 SUP31084簧65Mn 65Г156655Si2Mn 55C2Г 9255 250A53 SUP6 55S6 55Si760Si2MnA 60C2ГA 9260 250A61 SUP7 61S7 65Si7 钢9260H50CrVA 50XΦA 6150 735A50 SUP10 50CV4 50CrV4滚GCr9 ШX9 E51100 SUJ1 100C5 105Cr4动51100轴GCr9SiMn SUJ3承GCr15 ШX15 E52100 534A<99 SUJ2 100C6 100Cr6 钢52100GCr15SiMn ШX15CГ100CrMn6易Y12 A12 C1109 SUM12切Y15 B1113 220M07 SUM22 10S20削Y20 A20 C1120 SUM32 20F2 22S20钢Y30 A30 C1130 SUM42 35S20Y40Mn A40ГC1144 225M36 45MF2 40S20耐磨钢ZGMn13 116Г13ЮSCMnH11 Z120M12X120Mn12T7 y7 W1-7 SK7,SK6 C70W1碳T8 y8 SK6,SK5素T8A y8A W1-0.8C 1104Y175 C80W1工T8Mn y8ГSK5具T10 y10 W1-1.0C D1 SK3钢T12 y12 W1-1.2C D1 SK2 Y2 120 C125WT12A y12A W1-1.2C XC 120 C125W2T13 y13 SK1 Y2 140 C135W8MnSi C75W39SiCr 9XC BH21 90CrSi5Cr2 X L3 100Cr6合Cr06 13X W5 SKS8 140Cr39Cr2 9X L 100Cr6金金W B1 F1 BF1 SK21 120W4Cr12 X12 D3 BD3 SKD1 Z200C12 X210Cr12 工Cr12MoV X12M D2 BD2 SKD11 Z200C12 X165CrMoV46 9Mn2V 9Г2Φ 02 80M80 90MnV8具9CrWMn 9XBГ01 SKS3 80M8CrWMn XBГ07 SKS31 105WC13 105WCr6 钢3Cr2W8V 3X2B8ΦH21 BH21 SKD5 X30WC9VX30WCrV935CrMnMo 5XГM SKT5 40CrMnMo75CrNiMo 5XHM L6 SKT4 55NCDV7 55NiCrMoV64Cr5MoSiV 4X5MΦC H11 BH11 SKD61 Z38CDV5X38CrMoV514CrW2Si 4XB2C SKS41 40WCDS35-12 35WCrV75CrW2Si 5XB2C S1 BSi 45WCrV7W18Cr4V P18 T1 BT1 SKH2 Z80WCV S18-0-1 高18-04-01速W6Mo5Cr4V2 P6M3 N2 BM2 SKH9 Z85WDCV S6-5-2工06-05-04-02具W18Cr4VCo5 P18K5Φ2 T4 BT4 SKH3 Z80WKCV S18-1-2-5 钢18-05-04-01W2Mo9Cr4VCo8 M42 BM42 Z110DKCWV S2-10-1-809-08-04-02-011Cr18Ni9 12X18H9 302 302S25 SUS302 Z10CN18.09X12CrNi188S30200Y1Cr18Ni9 303 303S21 SUS303 Z10CNF18.09X12CrNiS188S30300不0Cr19Ni9 08X18H10 304 304S15 SUS304 Z6CN18.09X5CrNi189S3040000Cr19Ni11 03X18H11 304L 304S12 SUS304L Z2CN18.09 X2CrNi189S304030Cr18Ni11Ti 08X18H10T 321 321S12 SUS321 Z6CNT18.10X10CrNiTi189锈S32100 321S200Cr13Al 405 405S17 SUS405 Z6CA13 X7CrAl13S405001Cr17 12X17 430 430S15 SUS430 Z8C17 X8Cr17 钢S430001Cr13 12X13 410 410S21 SUS410 Z12C13 X10Cr13S410002Cr13 20X13 420 420S37 SUS420J1 Z20C13 X20Cr13S420003Cr13 30X13 420S45 SUS420J27Cr17 440A SUS440AS440020Cr17Ni7Al 09X17H7Ю631 SUS631 Z8CNA17.7X7CrNiAl177S177002Cr23Ni13 20X23H12 309 309S24 SUH309 Z15CN24.13S309002Cr25Ni21 20X25H20C2 310 310S24 SUH310 Z12CN25.20 CrNi2520耐S310000Cr25Ni20 310S SUS310SS31008热0Cr17Ni12Mo2 08X17H13M2T 316 316S16 SUS316Z6CND17.12 X5CrNiMo1810S316000Cr18Ni11Nb 08X18H12E 347 347S17 SUS347 Z6CNNb18.10 X10CrNiNb189钢S347001Cr13Mo SUS410J11Cr17Ni2 14X17H2 431 431S29 SUS431 Z15CN16-02X22CrNi17S431000Cr17Ni7Al 09X17H7Ю631 SUS631 Z8CNA17.7X7CrNiAl177S17700BY:李军辉录入并校对 Mar.16,2000七国铝及其合金牌号对照表国内外常用铝及铝合金牌号对照表类中国美国英国日本法国德国前苏联别GB ASTM BS JIS NF DIN ГОСТ工1A<99 11<99 A1<99.<99R A<99业1A97 A1<99.98R A97纯1A95 A95铝1A80 1080(1A) 1080 1080A A1<99.90 A8 1A50 1050 1050(1B) 1050 1050A A1<99.50 A5防5A02 5052 NS4 5052 5052 A1Mg2.5 Amg锈5A03 NS5 AMg3铝5A05 5056 NB6 5056 A1Mg5 AMg5V5A30 5456 NG61 5556 59572A01 2036 2117 2117 AlCu2.5Mg0.5 D18硬2A11 HF15 2017 2017S AlCuMg1 D1铝2A12 2124 2024 2024 AlCuMg2 D16AVTV 2B16 2319锻2A80 2N01 AK42A90 2218 2018 AK2铝2A14 2014 2014 2014 AlCuSiMn AK8超硬铝7A09 7175 7075 7075 AlZnMgCu1.5 V95PZAlSi7Mn 356.2 LM25 AC4C G-AlSi7Mg 铸ZAlSi12 413.2 LM6 AC3A A-S12-Y4 G-Al12 AL2造ZAlSi5Cu1Mg 355.2 AL5铝ZAlSi2Cu2Mg1 413.0 AC8A G-Al12(Cu)合ZAlCu5Mn AL19金ZAlCu5MnCdVA 201.0ZAlMg10 520.2 LM10 AG11 G-AlMg10 AL8ZAlMg5Si G-AlMg5Si AL13By:Jeffrey Lee Mar.16,2000不锈钢不锈耐酸钢项目中国日本德国美国英国法国前苏联GB,YB JIS DIN(W-Nr.) ASTM AISI SAE BS NF ГОСТ0Cr13 SUS405 X7Cr13(1.4000) 405 405S1708X13(0X13)SUS429 429SUS416 416 416S21 Z12CF131Cr17 SUS430 X8Cr17(1.4016) 430 430S15 Z8C1712X17(X17)SUS430F X12CrMoS17(1.4104) 430FZ10CF17SUS434 X6CrMo17(1.4113) 434 434S19 Z8CD17-01 1Cr28 X8Cr28(1.4083) 15X28(X28)0Cr17Ti 08X17T(0X17T)1Cr17Ti X8CrTi17(1.4510)1Cr25Ti 25X25T(X25T)1Cr17Mo2Ti X8CrMoTi17(1.4523)1Cr13 SUS410, X10Cr13(1.4006), 410, 410S21,Z12C13 12X13(1X13)SUS403 X15Cr13(1.4024) 403 403S17SUS410S X7Cr13(1.4000) 410S Z6C1308X13(0X13)2Cr13 SUS420J1 X20Cr13(1.4021) 420 420S37 Z20C13 20X13(2X13)420S29SUS420F 420F Z30CF133Cr13 SUS420J2 420S45 Z30C13 30X13(3X13)4Cr13 X40Cr13(1.4034) Z40C1440X13(4X13)1Cr17Ni2 SUS431 X22CrNi17(1.4057) 431 431S2914X17H2(1X17H2)9Cr18 95X18(9X18)9Cr18MoV X90CrMoV18(1.4112)SUS440A 440ASUS440B 440BSUS440C 440C Z100CD17SUS440F 440FSUS305 X5CrNi19 11(1.4303) 305 305S19 Z8CN18-12 00Cr18Ni10 SUS304L X2CrNi18 9(1.4306) 304L304L12 Z2CN18-10 03X18H11(000X18H11)0Cr18Ni9 SUS304 X5CrNi18 9(1.4301) 304 304S15Z6CN18-09 08X18H10(0X18H10)1Cr18Ni9 SUS302 X12CrNi18 8(1.4300) 302 302S25Z10CN18-09 12X18H9(X18H9)2Cr18Ni9 17X18H9(2X18H9)SUS303 X12CrNiS18 8(1.4305) 303 303S12Z10CNF18-09SUS303Se 303Se 303S1412X18H10E(X18H10E)SUS201 201SUS202 202 284S16 12X17 Г 9AH4(X17 Г 9AH4)SUS301 301 301S21 Z12CN17-070Cr18Ni9Ti SUS321 X10CrNiTi18 9(1.4541) 321 321S12Z6CNT18-11 08X18H10T(0X18H10T)1Cr18Ni9Ti X10CrNiTi18 9(1.4541) 321S20 Z10CNT18-11 12X18H10T(X18H10T),12X18H9T(X18H9T)1Cr18Ni11Nb SUS347 X10CrNiNb18 9(1.4550) 347 347S17 Z10CNNb18-10 08X18H12 ь(0X18H12 ь )SUS384 384 Z6CNC18-16SUS385 385SUS XM7 XM7 Z6CNU18-10SUS XM15J1 XM152Cr13Mn9Ni4 20X13H4 Г 9(2X13H4 Г 9)1Cr18Mn8Ni5N 15X17A Г 14(X17A Г 14)0Cr18Ni2Mo2Ti X10CrNiMoTi18 10(1.4571)Z8CNDT17-12 10X17H13M2T(X17H13M2T)1Cr18Ni12Mo2Ti X10CrNiMoTi18 10(1.4571)Z8CNDT17-12 10X17H13M2T(X17H13M2T)SUS308 308SUS309S 309SSUS310S 310S00Cr17Ni14Mo3 SUS317L X2CrNiMo18 10(1.4438) 317L 317S12 Z2CND19-150Cr18Ni12Mo3Ti 320S17 Z8CNDT17-131Cr18Ni12Mo3Ti Z8CNDT17-13SUS317 317 317S16SUS316 X2CrNiMo18 10(1.4401) 316Z6CND17-12SUS316L X2CrNiMo18 10(1.4404), 316L 316S12 Z2CND17-12, 03X17H14M2X2CrNiMo18 12(1.4435) Z2CND17-13 (000X17H13M2)00Cr18Ni14Mo2Cu2 SUS316J1L0Cr18Ni18Mo2Cu2Ti X5CrNiMoCuTi18 18(1.4506)0Cr17Ni7Al SUS631 X7CrNiAl17 7(1.4568) 631Z8CNA17-7 09X17H7 ю(0X17H7 ю )SUS630 630工具钢弹簧钢、滚动轴承钢、高速工具钢项目中国日本德国美国英国法国前苏联国际GB,YB JIS DIN(W-Nr.) ASTM AISI SAE BS NF ГОСТISO弹簧钢 65 C67(1.0761) 1064, 1064, 1064, 080A67 XC65 65CK67(1.1231) 1065 1065 106570 C67(1.0761) 1070 1070 1070 070A72 XC70 70CK67(1.1231)75 C75(1.0773) 1074 1074 1074 070A78 XC70, 75XC8085 SUP3 1084 1084 1084 080A86 8565Mn 1566 1566 65 Г-106655Si2Mn SUP6 55Si7(1.0904) 9255 9255 9255 250A53 55S6, 55C256S760Si2Mn SUP7 65Si7(1.0906), 9260 9260 9260250A58, 61S7 60C266Si7(1.5028), 250A6160SiCr7(1.0961)60Si2CrA 67SiCr5(1.7103) 9254 925460C2XA50CrMn SUP9 55Cr3(1.7176) 527A60 50X Г50CrVA SUP10 50CrV4(1.8159) 6150 6150 6150 735A50 50CV4 50X Φ A滚动轴承钢GCr6 105Cr2(1.3501) E50100 50100100C3 Ш X6GCr9 SUJ1 105Cr4(1.3503) E51100 51100 51100534A<99 100C5 Ш X9GCr15 SUJ2 100Cr6(1.3505) E52100 52100 52100534A<99 100C6 Ш X15GCr9SiMn SUJ3 A485-Gr.1GCr15SiMn 100CrMn6(1.3520) Ш X15C Г高速工具钢W18Cr4V SKH2 (S18-0-1)(1.3355) T1 T1 BT1 4201 P18Z80WCV4/1/18SKH3 S18-1-2-5(1.3255) T4 T4 BT4 4271Z80WKCV18-05-04-01SKH4A T5 T5 BT5 4275Z80WKCV18-10-04-02SKH4B T6 T6 BT6SKH10 S12-1-4-5(1.3202) T15 BT15 4175 P10K5 φ 5Z165WKCV12-05-05-04SKH9 S6-5-2(1.3343) M2 M2 BM2 4301Z85WDCV06-05-04-02SKH52 M3-1 M3-1SKH53 S6-5-3(1.3344) M3-2 M3-2SKH54 M4 BM14 4361Z130WDCV06-05-04-04SKH55 S6-5-2-5(1.3243) 4371Z85WDKCV06-05-05-04-02SKH56 M36 M36SKH57 S10-4-3-10(1.3207)W12Cr4V4Mo S12-4(1.3302) P14 φ 4合金工具钢合金工具钢项目中国日本德国美国英国法国前苏联国际GB,YB JIS VDEh(W-Nr.) ASTM AISI SAE BS NF ГОСТISO(1) 量具刃具用9SiCr 90CrSi5(1.2108)9XC8MnSi C75W3(1.1750)钢组CrMn 145Cr5(1.2063) X ГSKS51 L6 L6CrW5 SKS1 XB5SKS11 F2 F2SKS7 O7 O7 2142110WC20CrO6 SKS8 140Cr3(1.2008) 1230 13XY2135CCr2 100Cr6(1.2067), L3 X105Cr5(1.2060)9Cr2 85Cr7(1.2064) 9XSKS2 2141 B1100WC10V SKS43 W2-91/2, BW2 1162 ψW1-91/2 Y1105VW SKS21 F1 BF1(2) 耐冲击工具4CrW2Si SKS41 35WCrV7(1.2541), S1 S1 BS1 2341 4XB2C用钢组45WCrV7(1.2542) 55WC20 5CrW2Si 45WCrV7(1.2542) BS1 5XB2C SKS42 80WCrV8(1.2552)6CrW2Si 6XB2CSKS44 W2-81/2(3) 冷作模具钢组Cr12 SKD1 X210Cr12(1.2080) D3 D3BD3 2233 X12Z200C12Cr12MoV SKD11 X165CrMoV12(1.2601) D2 D2 BD2, 2235 X12MBD2A Z160CDV12Cr6WV X6B ψSKD12 A2 A2 BA2 2231Z100CDV59Mn2 O2 O29Mn2V 90MnV8(1.2842) O2 O2 BO2 221190MV8冷作模具钢组MnCrWV O1 O1 BO1CrWMn SKS31 105WCr6(1.2419) 2212 XB Г90MCW59CrWMo SKS3 9XB ГSKD2 X210CrW12(1.2436) D7 D7(4) 热作模具钢组5CrMnMo SKT3 40CrMnMo7(1.2311) 6G(ASM) 6G 5X Г MSKT5 48CrMoV67(1.2323) 6G(ASM) 6GSKT2 6150 6150 6150SCrNiMo SKT4 55NiCrMoV6(1.2713) 6F2(ASM) 6F2 3381 5X Г M55NCDV73Cr2W8V SKD5 X30WCrV53(1.2567) H21 H21 BH21, 3543 3X2B8 ψBH21A Z30WCV94SiCrV 38SiCrV8(1.2248) 4XC45SiCrV6(1.2249)8Cr3 8X34Cr5MoVSi SKD6 X38CrMoV51(1.2343) H11 H11 BH11 3431Z38CDV5SKD4 4X2B5 ψ MSKD61 X40CrMoV51(1.2344) H13 H13 BH13SKD62 H12 H12 BH12 3432Z38CDWV5冷作模具钢组MnCrWV O1 O1 BO1CrWMn SKS31 105WCr6(1.2419) 2212 XB Г90MCW59CrWMo SKS3 9XB ГSKD2 X210CrW12(1.2436) D7 D7(4) 热作模具钢组5CrMnMo SKT3 40CrMnMo7(1.2311) 6G(ASM) 6G 5X Г MSKT5 48CrMoV67(1.2323) 6G(ASM) 6GSKT2 6150 6150 6150SCrNiMo SKT4 55NiCrMoV6(1.2713) 6F2(ASM) 6F23381 5X Г M55NCDV73Cr2W8V SKD5 X30WCrV53(1.2567) H21 H21 BH21, 3543 3X2B8 ψBH21A Z30WCV94SiCrV 38SiCrV8(1.2248) 4XC45SiCrV6(1.2249)8Cr3 8X34Cr5MoVSi SKD6 X38CrMoV51(1.2343) H11 H11 BH11 3431Z38CDV5SKD4 4X2B5 ψ MSKD61 X40CrMoV51(1.2344) H13 H13 BH13SKD62 H12 H12 BH12 3432Z38CDWV5淬透性合金结构钢淬透性合金结构钢项目中国日本德国美国英国法国前苏联国际GB,YB JIS DIN(W-Nr.) ASTM AISI SAE BS NF ГОСТISOSMn433H 1330H 1330H 1330H(SMn1H)SMn438H 1041H 1041H 1041H(SMn2H)SMn443H 1041H 1041H 1041H(SMn3H)SCr420H 5120H 5120H 5120H(SCr22H)SCr430H 5130H 5130H 5130H 530H30(SCr2H)SCr435H 5135H 5135H 5135H 503H36(SCr3H)SCr440H 5140H 5140H 5140H 503H40(SCr4H)SCM418H 4118H 4118H 4118HSCM435H 4135H 4135H 4135H 640H35 30CD4(SCM3H)SCM440H 4140H 4140H 4140H 708H42(SCM4H)SCM445H 4145H 4145H 4145H(SCM5H)SNC631H 30NC11(SNC2H)SNC815H 655H13(SNC22H)SNCM220H 8620H 8620H 8620H 20NCD2(SNCM21H)SNCM420H 4320H 4320H 4320H(SNCM23H)合金结构钢合金结构钢(1)合金结构钢(2)合金结构钢(3)项目中国日本德国美国英国法国前苏联国际GB,YB JIS DIN(W-Nr.) ASTM AISI SAE BS NF ГОСТISO(1) 锰钢组09Mn2 09 Г 210Mn2 1513 1513 10 Г 215Mn2 15 Г 220Mn2 SMn420 1024 1024 1524 150M19 20 Г 2(SMn21) -102430Mn2 SMn433 28Mn6(1.5065), 1330 1330 1330 150M2830 Г 2(SMn1) 30Mn5(1.5066)35Mn2 SMn438 36Mn5(1.5067) 1335 1335 1335 150M3635 Г 2(SMn2)40Mn2 Smn443 (SMn3) 1340 1340 1340 40 Г 245Mn2 Smn443 (SMn3) 1345 1345 1345 45 Г 250Mn2 1052 1052 1552 50 Г-1052(2) 硅锰钢组27SiMn 27C Г35SiMn 37MnSi5(1.5122) 35C Г42SiMn 46MnSi4(1.5121) 43C Г15MnV 15MnV5(1.5213)(3) 锰钒钢组42Mn2V 42MnVT(1.5223)(4) 铬钢组15Cr SCr415 ( SCr21 )5115 511512C3 15X20Cr SCr240 ( SCr22 )5120 5120 5120 527A19, 18C3 20X527M2030Cr SCr430 ( SCr2 )5130, 5130, 5130, 530A30,32C4 30X5132 5132 5132 530A3235Cr SCr435 ( SCr3 )34Cr4(1.7033), 5135 51355135 530A36 38C4 35X R683/ Ⅶ 237Cr4(1.7034)40Cr SCr440 ( SCr4 )41Cr4(1.7035) 5140 5140 5140 530A40, 42C4 40X R683/ Ⅶ 3530M4045Cr SCr445 ( SCr5 )5147, 5147, 5147, 45C4 45X5145 5145 514550Cr 5150 5150 5150 50X(5) 铬硅钢组38CrSi 38XC40CrSi 40XC(6) 铬锰钢组38CrMn 16MC5 15X Г ,18X Г15CrMn 20MnCr4(1.7147) 20MC5 20X Г40CrMn 40X Г合金结构钢(2)项目中国日本德国美国英国法国前苏联国际GB,YB JIS DIN(W-Nr.) ASTM AISI SAE BS NF ГОСТISO(7) 铬锰硅钢组20CrMnSi 20X Г C25CrMnSi 25X Г C30CrMnSi 30X Г C35CrMnSi 35X Г CA(8) 铬钒钢组20CrV 22CrV4(1.7513)20X ψ40CrV 42CrV6(1.7561) 40X ψ A50CrV SUF10 50CrV4(1.8159) 6150 6150 6150 735A50 50CV4 50X ψ A(9) 铬锰钛钢组30CrMnTi 30X Г T(10) 钼钢组16Mo 15Mo3(1.5415) 16M(11) 铬钼钢组 12CrMo 13CrMo44(1.7335)1501-620Gr · 27 12CD4 12XM15CrMo SCM415 16CrMo44(1.7337) A387Cr 12CD415XM(SCM21) · 1220CrMo SCM420 25CrMo4(1.7218) 18CD4 20XM(SCM22) 20CD430CrMo SCM430 34CrMo4(1.7220) 4130 4130 413030CD4 30XM(SCM2)35CrMo SCM435 34CrMo4(1.7220) 4135 4135 4135 708A37 35CD4 35XM R683/ Ⅱ 2(SCM3)42CrMo SCM440 42CrMo4(1.7225) 4140 4140 4140 708M40,42CD4 R683/ Ⅱ3(SCM4) 708A42,709M40SCM421 R683/ Ⅺ 7(SCM23)SCM418 4118 4118 4118SCM445 50CrMo4(1.7228) 4145 4145 4145(SCM5)SCM822 25CrMo4(1.7218) 25CD4(SCM24)38CrMoAl SACM645 34CrAlMo5(1.8507) 905M3938XM ю A R683/ Ⅹ4(SACM1)(12) 铬锰钼钢组15CrMnMo 15CrMo5(1.7262)20CrMnMo 20CrMo5(1.7264) 18X Г M40CrMnMo 4140 4140 4140 708A42 40X Г M,38X Г M(13) 铬锰钒钢组12CrMoV 24CrMoV55(1.7733)12XM ψ12Cr1MoV 12X1M ψ24CrMoV 35 ψ M ψ A35CrMoV合金结构钢(3)项目中国日本德国美国英国法国前苏联国际GB,YB JIS DIN(W-Nr.) ASTM AISI SAE BS NF ГОСТISO(14) 镍铬钢组 12CrNi2 SNC415 10N11, 12XH2(SNC21) 16NC1112CrNi3A SNC815 14NiCr10(1.5732) -3415 665M1310NC12, 12XH3A(SNC22) 14NC1212Cr2Ni4A (E3310), (3310), 12NC1512X2H2A(E3316) 331620CrNi -3120 -3120 635M15 20NC6 20XH20CrNi3A 20NC11 20XH3A20Cr2Ni4A -3325 30NC14 20X2H4A30CrNi3A SNC631 -3435 653M31 30NC11, 30XH3A(SNC2) 30NC1237CrNi3A SNC836 -3335 35NC15(SNC3)40CrNi SNC236 -3140 -3140 640M40 35NC6 40XH(SNC1)45CrNi (A3145) -3145 45XH(15) 镍铬钼钢组40CrNiMoA SNCM439 4340 4340, 4340, 817M40, 40XMA R683/ Ⅲ4(SNCM8) -4337 4337 816M40SNCM220 8620 8620 8620 805M20 20NCD2R683/ Ⅺ 12(SNCM21)SNCM240 8640 8640 8640 945M38,R683/ Ⅷ 1(SNCM6) 945A40SNCM415 4315(SNCM22)SNCM420 4320 4320 4320(SNCM23)SNCM431 -4337 -4337(SNCM1)SNCM447 4347(SNCM9)SNCM625 830M31(SNCM2)SNCM815 835M15 R683/ Ⅺ 14(SNCM25)(16) 硼钢组40B TS14B3540B 50B36H40MnB TS14B35H40MnB TS14B50H合金结构钢(2)合金结构钢(3)碳素工具钢碳素工具钢项目中国日本德国美国英国法国前苏联国际GB,YB JIS DIN(W-Nr.) ASTM AISI SAE BS NF ГОСТISOT7 SK7,SK6 W1-7 1204Y275, Y71304Y375T8 SK6,SK5 W1-71/2 Y8T8Mn SK5 Y8 ГT9 SK4,SK5 W2-81/2, WB1A Y9W1-81/2T10 SK3,SK4 W2-91/2, BW1B 1203Y290, Y10W1-91/2 1303Y390T11 SK3 W1-101/2 1202Y2105 Y11T12 SK2 W1-111/2 BW1C 1201Y2120 Y12T13 SK1 W2-13, 1200Y2135 Y13W1-121/2T7A 1105Y165 Y7AT8A C80W1(1.1525) 1104Y175 Y8A(VDEh)T8MnA C85WS(1.1830) Y8 Г A(VDEh)T9A 1103Y190 9YAT10A C105W1(1.1545) Y10A(VDEh)T11A 1102Y1105 Y11AT12A 1101Y1120 Y12AT13A Y13A优质碳素结构钢优质碳素结构钢(1)普通含锰量组较高含锰量组项目中国日本德国美国英国法国前苏联国际GB,YB JIS DIN(W-Nr.) ASTM AISI SAE BS NF ГОСТISO普05F 1005 1005 015A03 05kn08F 1006 1006 1006 040A04 08kn 通8 S09CK(S9CK) C10(1.0301), 1008 1008 1008 050A04 8CK10(1.1121)含10F 1010 1010 1010 040A10 10kn10 S10C CK10(1.1121) 1010 1010 1010 040A10,XC10 10锰050A10,060A10量S12C 1012 1012 1012 040A12, XC12050A12,组060A1215F 040A15 15kn15 S15C, C15(1.0401), 1015 1015 1015 040A15,15CK15(1.1141), 050A15,S15CK Cm15(1.1140) 060A15S17C 1017 1017 1017 040A17, XC18050A17,060A1720F 040A20 20kn20 S20C, 1020 1020 1020 050A20, 20S20CK 060A20S22C C22(1.0402), 1023 1023 1023 040A22,CK22(1.1151) 050A22,060A2225 S25C 1025, 1025, 1025, 060A25, XC25 25R683/IC25e1026 1026 1026 080A25S28C 1029 1029 1029 060A27,080A2730 S30C 1030 1030 1030 060A30, XC32 30R683/IC30e080A30,080M30S33C 1035 1035 1035 060A32,080A3235 S35C C35(1.0501), 1035, 1035, 1035, 060A35,XC35 35 R683/IC35eCK35(1.1181), 1037 1037 1037 080A35Cm35(1.1180)优质碳素结构钢(2)项目中国日本德国美国英国法国前苏联国际GB,YB JIS DIN(W-Nr.) ASTM AISI SAE BS NF ГОСТISO普S38C 1038 1038 1038 060A37, XC38080A37通40 S40C 1040, 1040, 1040, 060A40, 40R683/IC40e1039 1039 1039 080A40,含080M40S43C 1042, 1042, 1042, 060A42, XC42 锰1043 1043 1043 080A4245 S45C C45(1.0503), 1045, 1045, 1045, 060A47,XC45 45 R683/IC45e量CK45(1.1191), 1046 1046 1046 080A47,Cm45(1.1201) 080M46钢S48C 1045, 1045, 1045, 060A47, XC481046, 1046, 1046, 080A47组1049 1049 104950 1050, 1050, 1050, 080M50 50 R683/IC50e1053 1053 1053S53C 1055 1055 1055 060A52,080A5255 S55C C55(1.0535), 1055 1055 1055 070M55,XC55 55 R683/IC55eCK55(1.1181), 060A57,Cm55(1.1209) 080A5760 S58C C60(1.0601), 1060 1060 1060 060A62,60 R683/IC60eCK60(1.1221), 080A62Cm60(1.1223)65 1065 1065 1065 060A67, XC65 65080A6770 1070 1070 1070 060A72, XC70 70070A72,080A7275 1074 1074 1074 060A78, 75070A78,080A7880 1080 1080 1080 060A82, XC80 80080A8385 1084 1084 1084 060A86, 85080A86优质碳素结构钢(3)项目中国日本德国美国英国法国前苏联国际GB,YB JIS DIN(W-Nr.) ASTM AISI SAE BS NF ГОСТISO较15Mn 17Mn4(1.8044) 1016, 1016, 1016, 080A15,15 Г1019 1019 1019 080A17高20Mn 1021, 1021, 1021, 080A20, XC18 20 Г含1022 1022 1022 070M2025Mn S28C 1026 1026 1026 070M26 25 Г锰30Mn S30C 1030 1030 1030 080A30, XC32 30 Г080A32量35Mn S35C 1037 1037 1037 080A35 35 Г40Mn S40C 40Mn4(1.5038) 1039, 1039, 1039, 080A4040 Г钢1040 1040 104045Mn S45C 1043, 1043, 1043, 080A47 45 Г组1046 1046 104650Mn S53C 1050, 1050, 1050, 080A52, XC48 50 Г1053 1053 1053 080M5060Mn 1561 1561 080A64 60 Г65Mn 1566 1566(1066) 65 Г70Mn 1572 1572 70 Г普通含锰量组较高含锰量组普通碳素结构钢普通碳素结构钢中国国际原苏联美国日本德国英国法国GB/T 700 ISO 3573 ISO 630 GOST 535 GOST 380 ASTM A283M ASTM A573M ASTM A284M ASTM A709M JIS G3101 JIS G3131 JIS G3106 DIN EN10025 BS 970 Part1 BS EN10025 NF EN10025 Q 195 HR2 CT1KP Gr.B SS 330(SS34) SPHC 040A10CT1CP SPHDCT1PCQ 215 A HR1 CT2KP-2 Gr.C Gr.58 SS 330(SS34) SPHC Fe 360 C 040A12 Fe 360 C Fe 360 CCT2PC-2CT2CP-2Q 215 B CT2KP-3 Gr.C Gr.58 Gr.C SS 330(SS34) SPHC 040A12CT2PC-3 SPHDCT2CP-3Q235 A Fe 360 A CT3KP-2 Gr.D SS 400(SS41) SM 400A(SM41A) Fe 360 B 080A15 Fe 360 B Fe 360 BCT3PC-2 Fe 360 CCT3CP-2 Fe 360 C Fe 360 CQ 235 B Fe 360 D CT3KP-3 Gr.D SS 400(SS41) SM 400A(SM41A) Fe 360 B 080A15 Fe 360 B Fe 360 BCT3PC-3 Fe 360 C Fe 360 C Fe 360 CCT3CP-3Q 235 C Fe 360 D CT3KP-4 Gr.D Gr.65 Gr.D SS 400A(SS41A)SM 400B(SM41B) Fe 360 C 080A15 Fe 360 C Fe 360 CCT3PC-4CT3CP-4Q 235 D Fe 360 D CT3KP-4 SS400A(SS41A) Fe 360D1 Fe 360D1 Fe 360D1CT3PC-4 Fe 360D2CT3CP-4 Fe 360D2 Fe 360D2Q 255 A CT4KP-2 Gr.36 [250] SS 400(SS41) SS 400A(SS41A)CT4PC-2CT4CP-2Q 255 B CT4KP-3 Gr.36 [250] SS 400(SS41) SS 400A(SS41A)CT4PC-3CT4CP-3Q 275 Fe 430 A CT5KP-2 SS490(SS50)CT5CP-2ASSAB一胜百钢材UDDEHOLM ASSAB W.nr AISI JIS 出厂硬度主要成分特性淬硬温度℃回火后硬度用途UHB AS DELIVERED C Cr Ni W Mo V Co CHARACTERISTICS AUSTENITIZING TEMP。
LM5105100V Half Bridge Gate Driver with Programmable Dead-timeGeneral DescriptionThe LM5105is a high voltage gate driver designed to drive both the high side and low side N –Channel MOSFETs in a synchronous buck or half bridge configuration.The floating high-side driver is capable of working with rail voltages up to 100V.The single control input is compatible with TTL signal levels and a single external resistor programs the switching transition dead-time through tightly matched turn-on delay circuits.A high voltage diode is provided to charge the high side gate drive bootstrap capacitor.The robust level shift technology operates at high speed while consuming low power and provides clean output transitions.Under-voltage lockout disables the gate driver when either the low side or the bootstrapped high side supply voltage is below the op-erating threshold.The LM5105is offered in the thermally enhanced 10-pin LLP plastic package.Featuresn Drives both a high side and low side N-channel MOSFETn 1.8A peak gate drive currentn Bootstrap supply voltage range up to 118V DC n Integrated bootstrap diode n Single TTL compatible Inputn Programmable turn-on delays (Dead-time)n Enable Input pinn Fast turn-off propagation delays (26ns typical)n Drives 1000pF with 15ns rise and fall time n Supply rail under-voltage lockout nLow power consumptionTypical Applicationsn Solid State motor drivesn Half and Full Bridge power converters n Two switch forward power convertersPackagen LLP-10(4mm x 4mm)Simplified Block Diagram20137502FIGURE 1.February 2005LM5105100V Half Bridge Gate Driver with Programmable Dead-time©2005National Semiconductor Corporation Connection Diagram2013750110-Lead LLPSee NS Number SDC10AOrdering InformationOrdering Number Package TypeNSC Package DrawingSupplied AsLM5105SD LLP-10SDC10A 1000shipped as Tape &Reel LM5105SDXLLP-10SDC10A4500shipped as Tape &ReelPin DescriptionsPin Name DescriptionApplication Information1V DD Positive gate drive supply Decouple VDD to VSS using a low ESR/ESL capacitor,placed as close to the IC as possible.2HBHigh side gate driver bootstrap rail Connect the positive terminal of bootstrap capacitor to the HB pin and connect negative terminal to HS.The Bootstrap capacitor should be placed as close to IC as possible.3HO High side gate driver outputConnect to the gate of high side N-MOS device through a short,low inductance path.4HS High side MOSFET source connection Connect to the negative terminal of the bootststrap capacitor and to the source of the high side N-MOS device.5NC Not Connected6RDTDeadtime programming pinA resistor from RDT to VSS programs the turn-on delay of both the high and low side MOSFETs.The resistor should be placed close to the IC to minimize noise coupling from adjacent PC board traces.7EN Logic input for driver Disable/EnableTTL compatible threshold with hysteresis.LO and HO are held in the low state when EN is low.8IN Logic input for gate driver TTL compatible threshold with hysteresis.The high side MOSFET is turned on and the low side MOSFET turned off when IN is high.9V SS Ground returnAll signals are referenced to this ground.10LOLow side gate driver outputConnect to the gate of the low side N-MOS device with a short,low inductance path.L M 5105 2Absolute Maximum Ratings(Note1)If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications.V DD to V SS–0.3V to+18VHB to HS–0.3V to+18VIN and EN to V SS–0.3V to V DD+0.3VLO to V SS–0.3V to V DD+0.3VHO to V SS HS–0.3V to HB+0.3VHS to V SS(Note6)−5V to+100VHB to V SS118VRDT to V SS–0.3V to5VJunction Temperature+150˚CStorage Temperature Range–55˚C to+150˚C ESD Rating HBM(Note2)2kVRecommended Operating ConditionsV DD+8V to+14V HS(Note6)–1V to100V HB HS+8V to HS+14V HS Slew Rate<50V/ns Junction Temperature–40˚C to+125˚CElectrical Characteristics Specifications in standard typeface are for TJ=+25˚C,and those in boldfacetype apply over the full operating junction temperature range.Unless otherwise specified,V DD=HB=12V,V SS=HS=0V,EN=5V.No load on LO or HO.RDT=100kΩ(Note4).Symbol Parameter Conditions Min Typ Max Units SUPPLY CURRENTSI DD V DD Quiescent Current IN=EN=0V0.340.6mAI DDO V DD Operating Current f=500kHz 1.653mAI HB Total HB Quiescent Current IN=EN=0V0.060.2mAI HBO Total HB Operating Current f=500kHz 1.33mAI HBS HB to V SS Current,Quiescent HS=HB=100V0.0510µAI HBSO HB to V SS Current,Operating f=500kHz0.1mAINPUT IN and ENV IL Low Level Input Voltage Threshold0.8 1.8VV IH High Level Input Voltage Threshold 1.8 2.2VR pd Input Pulldown Resistance Pin IN and EN100200500kΩDEAD-TIME CONTROLSVRDT Nominal Voltage at RDT 2.73 3.3VIRDT RDT Pin Current Limit RDT=0V0.75 1.5 2.25mA UNDER VOLTAGE PROTECTIONV DDR V DD Rising Threshold 6.0 6.97.4VV DDH V DD Threshold Hysteresis0.5VV HBR HB Rising Threshold 5.7 6.67.1VV HBH HB Threshold Hysteresis0.4VBOOT STRAP DIODEV DL Low-Current Forward Voltage I VDD-HB=100µA0.60.9VV DH High-Current Forward Voltage I VDD-HB=100mA0.85 1.1VR D Dynamic Resistance I VDD-HB=100mA0.8 1.5ΩLO GATE DRIVERV OLL Low-Level Output Voltage I LO=100mA0.250.4VV OHL High-Level Output Voltage I LO=–100mA,V OHL=V DD–V LO0.350.55VI OHL Peak Pullup Current LO=0V 1.8AI OLL Peak Pulldown Current LO=12V 1.6AHO GATE DRIVERV OLH Low-Level Output Voltage I HO=100mA0.250.4VV OHH High-Level Output Voltage I HO=–100mA,V OHH=HB–HO0.350.55VI OHH Peak Pullup Current HO=0V 1.8ALM51053Electrical Characteristics Specifications in standard typeface are for T J =+25˚C,and those in boldface typeapply over the full operating junction temperature range .Unless otherwise specified,V DD =HB =12V,V SS =HS =0V,EN =5V.No load on LO or HO.RDT=100k Ω(Note 4).(Continued)Symbol ParameterConditionsMinTyp MaxUnits I OLH Peak Pulldown CurrentHO =12V1.6ATHERMAL RESISTANCEθJAJunction to Ambient(Note 3),(Note 5)40˚C/WSwitching CharacteristicsSpecifications in standard typeface are for T J =+25˚C,and those in boldfacetype apply over the full operating junction temperature range .Unless otherwise specified,V DD =HB =12V,V SS =HS =0V,No Load on LO or HO (Note 4).Symbol ParameterConditionsMinTyp Max Units t LPHL Lower Turn-Off Propagation Delay 2656ns t HPHL Upper Turn-Off Propagation Delay 2656ns t LPLH Lower Turn-On Propagation Delay RDT =100k 485595705ns t HPLH Upper Turn-On Propagation Delay RDT =100k 485595705ns t LPLH Lower Turn-On Propagation Delay RDT =10k 75105150ns t HPLH Upper Turn-On Propagation Delay RDT =10k75105150ns t en ,t sd Enable and Shutdown propagation delay 28ns DT1,DT2Dead-time LO OFF to HO ON &HO OFF to LO ONRDT =100k 570µsRDT =10k 80MDT Dead-time matching RDT =100k 50t R ,t F Either Output Rise/Fall TimeC L =1000pF15t BSBootstrap Diode Turn-On or Turn-Off TimeI F =20mA,I R =200mA 50nsNote 1:Absolute Maximum Ratings indicate limits beyond which damage to the component may occur.Operating Ratings are conditions under which operation of the device is guaranteed.Operating Ratings do not imply guaranteed performance limits.For guaranteed performance limits and associated test conditions,see the Electrical Characteristics tables.Note 2:The human body model is a 100pF capacitor discharged through a 1.5k Ωresistor into each pin.Pin 2,Pin 3and Pin 4are rated at 500V.Note 3:4layer board with Cu finished thickness 1.5/1.0/1.0/1.5oz.Maximum die size used.5x body length of Cu trace on PCB top.50x 50mm ground and power planes embedded in PCB.See Application Note AN-1187.Note 4:Min and Max limits are 100%production tested at 25˚C.Limits over the operating temperature range are guaranteed through correlation using Statistical Quality Control (SQC)methods.Limits are used to calculate National’s Average Outgoing Quality Level (AOQL).Note 5:The θJA is not a constant for the package and depends on the printed circuit board design and the operating conditions.Note 6:In the application the HS node is clamped by the body diode of the external lower N-MOSFET,therefore the HS voltage will generally not exceed -1V.However in some applications,board resistance and inductance may result in the HS node exceeding this stated voltage transiently.If negative transients occur on HS,the HS voltage must never be more negative than V DD -15V.For example,if V DD =10V,the negative transients at HS must not exceed -5V.L M 5105 4Typical Performance CharacteristicsV DD Operating Current vs Frequency Operating Current vs Temperature2013751020137511 Quiescent Current vs Supply Voltage Quiescent Current vs Temperature2013751220137513 HB Operating Current vs Frequency HO&LO Peak Output Current vs Output Voltage2013751620137517LM51055Typical Performance Characteristics(Continued)Diode Forward VoltageUndervoltage Hysteresis vs Temperature2013751520137518Undervoltage Rising Threshold vs Temperature LO &HO -High Level Output Voltage vs Temperature2013751920137520LO &HO -Low Level Output Voltage vs Temperature Input Threshold vs Temperature2013752120137522L M 5105 6Typical Performance Characteristics(Continued)Dead-Time vs RT Resistor ValueDead-Time vs Temperature (RT =10k)2013751420137526Dead-Time vs Temperature (RT =100k)20137527LM51057Timing DiagramsOperational NotesThe LM5105is a single PWM input Gate Driver with Enable that offers a programmable deadtime.The deadtime is set with a resistor at the RDT pin and can be adjusted from 100ns to 600ns.The wide deadtime programming range provides the flexibility to optimize drive signal timing for a wide range of MOSFETS and applications.The RDT pin is biased at 3V and current limited to 1mA maximum programming current.The time delay generator will accommodate resistor values from 5k to 100k with a deadtime time that is proportional to the RDT resistance.Grounding the RDT pin programs the LM5105to drive both outputs with minimum deadtime.STARTUP AND UVLOBoth top and bottom drivers include under-voltage lockout (UVLO)protection circuitry which monitors the supply volt-age (V DD )and bootstrap capacitor voltage (HB –HS)inde-pendently.The UVLO circuit inhibits each driver until suffi-cient supply voltage is available to turn-on the external MOSFETs,and the UVLO hysteresis prevents chattering during supply voltage transitions.When the supply voltage is applied to the V DD pin of LM5105,the top and bottom gates are held low until V DD exceeds the UVLO threshold,typically about 6.9V.Any UVLO condition on the bootstrap capacitor will disable only the high side output (HO).20137503LM5105Input -Output WaveformsFIGURE 2.20137504LM5105Switching Time Definitions:t LPLH ,t LPHL ,t HPLH ,t HPHLFIGURE 3.20137530LM5105Enable:t sdFIGURE 4.20137531LM5105Dead-time:DTFIGURE 5.L M 5105 8Operational Notes(Continued)LAYOUT CONSIDERATIONSThe optimum performance of high and low side gate drivers cannot be achieved without taking due considerations during circuit board layout.Following points are emphasized.1.A low ESR/ESL capacitor must be connected close tothe IC,and between V DD and V SS pins and between HB and HS pins to support high peak currents being drawn from V DD during turn-on of the external MOSFET.2.To prevent large voltage transients at the drain of the topMOSFET,a low ESR electrolytic capacitor must be con-nected between MOSFET drain and ground(V SS).3.In order to avoid large negative transients on the switchnode(HS)pin,the parasitic inductances in the source of top MOSFET and in the drain of the bottom MOSFET (synchronous rectifier)must be minimized.4.Grounding considerations:a)The first priority in designing grounding connections isto confine the high peak currents from charging and discharging the MOSFET gate in a minimal physical area.This will decrease the loop inductance and mini-mize noise issues on the gate terminal of the MOSFET.The MOSFETs should be placed as close as possible to the gate driver.b)The second high current path includes the bootstrapcapacitor,the bootstrap diode,the local ground refer-enced bypass capacitor and low side MOSFET body diode.The bootstrap capacitor is recharged on the cycle-by-cycle basis through the bootstrap diode from the ground referenced V DD bypass capacitor.The re-charging occurs in a short time interval and involves high peak current.Minimizing this loop length and area on the circuit board is important to ensure reliable operation.5.The resistor on the RDT pin must be placed very close tothe IC and seperated from high current paths to avoid noise coupling to the time delay generator which could disrupt timer operation.POWER DISSIPATION CONSIDERATIONSThe total IC power dissipation is the sum of the gate driverlosses and the bootstrap diode losses.The gate driverlosses are related to the switching frequency(f),output loadcapacitance on LO and HO(C L),and supply voltage(V DD)and can be roughly calculated as:P DGATES=2•f•C L•V DD2There are some additional losses in the gate drivers due tothe internal CMOS stages used to buffer the LO and HOoutputs.The following plot shows the measured gate driverpower dissipation versus frequency and load capacitance.Athigher frequencies and load capacitance values,the powerdissipation is dominated by the power losses driving theoutput loads and agrees well with the above equation.Thisplot can be used to approximate the power losses due to thegate drivers.Gate Driver Power Dissipation(LO+HO)V CC=12V,Neglecting Diode Losses20137505 The bootstrap diode power loss is the sum of the forwardbias power loss that occurs while charging the bootstrapcapacitor and the reverse bias power loss that occurs duringreverse recovery.Since each of these events happens onceper cycle,the diode power loss is proportional to frequency.Larger capacitive loads require more current to recharge thebootstrap capacitor resulting in more losses.Higher inputvoltages(V IN)to the half bridge result in higher reverserecovery losses.The following plot was generated based oncalculations and lab measurements of the diode recoverytime and current under several operating conditions.Thiscan be useful for approximating the diode power dissipation.LM51059Operational Notes(Continued)Diode Power Dissipation V IN =80V20137506Diode Power Dissipation V IN =40V20137507The total IC power dissipation can be estimated from the above plots by summing the gate drive losses with the bootstrap diode losses for the intended application.Because the diode losses can be significant,an external diode placed in parallel with the internal bootstrap diode (refer to Figure 6)and can be helpful in removing power from the IC.For this to be effective,the external diode must be placed close to the IC to minimize series inductance and have a significantly lower forward voltage drop than the internal diode.HS Transient Voltages Below GroundThe HS node will always be clamped by the body diode of the lower external FET.In some situations,board resis-tances and inductances can cause the HS node to tran-siently swing several volts below ground.The HS node can swing below ground provided:1.HS must always be at a lower potential than HO.Pulling HO more than -0.3V below HS can activate parasitic transistors resulting in excessive current to flow from the HB supply possibly resulting in damage to the IC.The same relationship is true with LO and VSS.If necessary,a Schottky diode can be placed externally between HO and HS or LO and GND to protect the IC from this type of transient.The diode must be placed as close to the IC pins as possible in order to be effective.2.HB to HS operating voltage should be 15V or less .Hence,if the HS pin transient voltage is -5V,VDD should be ideally limited to 10V to keep HB to HS below 15V.3.A low ESR bypass capacitor between HB to HS as wellas VCC to VSS is essential for proper operation.The capacitor should be located at the leads of the IC to minimize series inductance.The peak currents from LO and HO can be quite large.Any series inductances with the bypass capacitor will cause voltage ringing at the leads of the IC which must be avoided for reliable op-eration.L M 5105 10LM5105 Operational Notes(Continued)LM5105Driving MOSFETs Connected in Half-Bridge Configuration Array20137508FIGURE6.11Physical Dimensionsinches (millimeters)unless otherwise notedNotes:Unless otherwise specified1.Standard lead finish to be 200microinches/5.00micrometers minimum tin/lead (solder)on copper.2.Pin 1identification to have half of full circle option.3.No JEDEC registration as of Feb.2000.LLP-10Outline Drawing NS Package Number SDC10ANational does not assume any responsibility for use of any circuitry described,no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.For the most current product information visit us at .LIFE SUPPORT POLICYNATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT AND GENERAL COUNSEL OF NATIONAL SEMICONDUCTOR CORPORATION.As used herein:1.Life support devices or systems are devices or systems which,(a)are intended for surgical implant into the body,or (b)support or sustain life,and whose failure to perform when properly used in accordance with instructions for use provided in the labeling,can be reasonably expected to result in a significant injury to the user.2.A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system,or to affect its safety or effectiveness.BANNED SUBSTANCE COMPLIANCENational Semiconductor certifies that the products and packing materials meet the provisions of the Customer Products Stewardship Specification (CSP-9-111C2)and the Banned Substances and Materials of Interest Specification (CSP-9-111S2)and contain no ‘‘Banned Substances’’as defined in CSP-9-111S2.National Semiconductor Americas Customer Support CenterEmail:new.feedback@ Tel:1-800-272-9959National SemiconductorEurope Customer Support CenterFax:+49(0)180-5308586Email:europe.support@Deutsch Tel:+49(0)6995086208English Tel:+44(0)8702402171Français Tel:+33(0)141918790National Semiconductor Asia Pacific Customer Support CenterEmail:ap.support@National SemiconductorJapan Customer Support Center Fax:81-3-5639-7507Email:jpn.feedback@ Tel:81-3-5639-7560L M 5105100V H a l f B r i d g e G a t e D r i v e r w i t h P r o g r a m m a b l e D e a d -t i m e。