FQI7N10L中文资料

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©2000 Fairchild Semiconductor InternationalDecember 2000

Rev. A2, December 2000FQB7N10L / FQI7N10L

QFETTMFQB7N10L / FQI7N10L100V LOGIC N-Channel MOSFETGeneral DescriptionThese N-Channel enhancement mode power field effecttransistors are produced using Fairchild’s proprietary,planar stripe, DMOS technology.This advanced technology is especially tailored to minimizeon-state resistance, provide superior switchingperformance, and withstand high energy pulse in theavalanche and commutation modes. These devices arewell suited for low voltage applications such as highefficiency switching DC/DC converters, and DC motorcontrol.Features•7.3A, 100V, RDS(on) = 0.35Ω @VGS = 10 V•Low gate charge ( typical 4.6 nC)•Low Crss ( typical 12 pF)•Fast switching•100% avalanche tested•Improved dv/dt capability•175°C maximum junction temperature rating•Low level gate drive requirments allowingdirect operationfrom logic drives

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Absolute Maximum Ratings TC = 25°C unless otherwise noted

Thermal Characteristics SymbolParameterFQB7N10L / FQI7N10LUnitsVDSSDrain-Source Voltage100VIDDrain Current- Continuous (TC = 25°C)7.3A- Continuous (TC = 100°C)5.15AIDMDrain Current - Pulsed(Note 1)29.2AVGSSGate-Source Voltage± 20VEASSingle Pulsed Avalanche Energy(Note 2)50mJIARAvalanche Current(Note 1)7.3AEARRepetitive Avalanche Energy(Note 1)4.0mJdv/dtPeak Diode Recovery dv/dt(Note 3)6.0V/nsPDPower Dissipation (TA = 25°C) *3.75WPower Dissipation (TC = 25°C)40W- Derate above 25°C0.27W/°CTJ, TSTGOperating and Storage Temperature Range-55 to +175°CTLMaximum lead temperature for soldering purposes,1/8" from case for 5 seconds300°C

SymbolParameterTypMaxUnitsRθJCThermal Resistance, Junction-to-Case--3.75°C/WRθJAThermal Resistance, Junction-to-Ambient *--40°C/WRθJAThermal Resistance, Junction-to-Ambient--62.5°C/W* When mounted on the minimum pad size recommended (PCB Mount)SD

G D2-PAKFQB Series I2-PAKFQI SeriesGSD

GSD元器件交易网www.cecb2b.com Rev. A2, December 2000FQB7N10L / FQI7N10L

(Note 4)

(Note 4, 5)

(Note 4, 5)

(Note 4)

©2000 Fairchild Semiconductor InternationalElectrical Characteristics TC = 25°C unless otherwise noted

Notes:1. Repetitive Rating : Pulse width limited by maximum junction temperature2. L = 1.4mH, IAS = 7.3A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C3. ISD ≤ 7.3A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%5. Essentially independent of operating temperatureSymbolParameterTest ConditionsMinTypMaxUnitsOff CharacteristicsBVDSSDrain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA100----V∆BVDSS/ ∆TJBreakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C--0.1--V/°CIDSSZero Gate Voltage Drain CurrentVDS = 100 V, VGS = 0 V----1µAVDS = 80 V, TC = 150°C----10µAIGSSFGate-Body Leakage Current, ForwardVGS = 20 V, VDS = 0 V ----100nAIGSSRGate-Body Leakage Current, ReverseVGS = -20 V, VDS = 0 V -----100nAOn Characteristics VGS(th)Gate Threshold Voltage VDS = VGS, ID = 250 µA1.0--2.0VRDS(on)Static Drain-Source On-ResistanceVGS = 10 V, ID = 3.65 AVGS = 5 V, ID = 3.65 A--0.2750.3000.350.38ΩgFSForward TransconductanceVDS = 30 V, ID = 3.65 A--5.0--SDynamic CharacteristicsCissInput CapacitanceVDS = 25 V, VGS = 0 V, f = 1.0 MHz --220290pFCossOutput Capacitance--5572pFCrssReverse Transfer Capacitance--1215pFSwitching Characteristics td(on)Turn-On Delay TimeVDD = 50 V, ID = 7.3 A,RG = 25 Ω --930nstrTurn-On Rise Time--100210nstd(off)Turn-Off Delay Time--1745nstfTurn-Off Fall Time--50110nsQgTotal Gate ChargeVDS = 80 V, ID = 7.3 A,VGS = 5 V --4.66.0nCQgsGate-Source Charge--1.0--nCQgdGate-Drain Charge--2.6--nCDrain-Source Diode Characteristics and Maximum RatingsISMaximum Continuous Drain-Source Diode Forward Current----7.3AISMMaximum Pulsed Drain-Source Diode Forward Current----29.2AVSDDrain-Source Diode Forward VoltageVGS = 0 V, IS = 7.3 A ----1.5VtrrReverse Recovery TimeVGS = 0 V, IS = 7.3 A,dIF / dt = 100 A/µs --70--nsQrrReverse Recovery Charge--140--nC元器件交易网www.cecb2b.comFQB7N10L / FQI7N10L

Rev. A2, December 2000©2000 Fairchild Semiconductor International

012345678024681012VDS = 50VVDS = 80V

※ Note : ID = 7.3 A

VGS, Gate-Source Voltage [V]

QG, Total Gate Charge [nC]10-11001010100200300400500600Ciss = Cgs + Cgd (Cds = shorted)Coss = Cds + CgdCrss = Cgd※ Notes : 1. VGS = 0 V 2. f = 1 MHzCrssCossCiss

Capacitance [pF]

VDS, Drain-Source Voltage [V]0.20.40.60.81.01.21.41.61.82.010-1100101

25℃175℃※ Notes : 1. VGS = 0V 2. 250μs Pulse TestIDR , Reverse Drain Current [A]

VSD , Source-Drain Voltage [V]051015200.00.30.60.91.21.5

VGS = 10VVGS = 5V

※ Note : TJ = 25℃

RDS(ON) [Ω],

Drain-Source On-Resistance

ID, Drain Current [A]024681010-1100101