FQT7N10中文资料

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150℃ 25℃
※ Notes : 1. V = 0V 2. 25G0Sμ s Pulse Test
10-1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 V , Source-Drain Voltage [V]
SD
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
1.7
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
6.8
A
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 1.7 A
VGS(th) RDS(on)
Gate Threshold Voltage
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VDS = VGS, ID = 250 µA
2.0 --
VGS = 10 V, ID = 0.85 A
-- 0.28
D
S
G SOT-223
FQT Series
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS ID
IDM VGSS EAS IAR EAR dv/dt PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
--
--
1.5
V
trr
Reverse Recovery Time
VGS = 0 V, IS = 7.3 A,
-- 70
--
ns
Qrr
Reverse Recovery Charge
dIF / dt = 100 A/µs
(Note 4)
--
150
--
nC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 26mH, IAS = 1.7A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 7.3A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature
62.5
Units V A A A V mJ A mJ
V/ns W
W/°C °C
°C
Units °C/W
©2001 Fairchild Semiconductor Corporation
Rev. A, May 2001
FQT7N10
元器件交易网
Electrical Characteristics
元器件交易网
FQT7N10
FQT7N10
100V N-Channel MOSFET
May 2001
QFET TM
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.
-- 190 -- 60 -- 10
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
12
10
V = 50V DS
V = 80V DS
8
6
4
2
※ Note : I = 7.3 A D
0
0
1
2
3
4
5
6
7
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A, May 2001
元器件交易网
* When mounted on the minimum pad size recommended (PCB Mount)
D
!
"
!"
G!
" "
!
S
FQT7N10 100 1.7 1.36 6.8 ± 25 50 1.7 0.2 6.0 2.0 0.016
-55 to +150
300
Typ
Max
--
©2001 Fairchild Semiconductor Corporation
Rev. A, May 2001
元器件交易网
FQT7N10
Typical Characteristics
ID, Drain Current [A]
DS(on) R [ Ω], Drain-Source On-Resistance
--
--
IGSSF IGSSR
Gate-Body Leakage Current, Forward VGS = 25 V, VDS = 0 V Gate-Body Leakage Current, Reverse VGS = -25 V, VDS = 0 V
--
--
--
--
On Characteristics
2.5
--1 10 100 -100
4.0 0.35
--
250 75 13
25 60 35 50 7.5 ---
V V/°C µA µA nA nA
V Ω S
pF pF pF
ns ns ns ns nC nC nC
Drain-Source Diode Characteristics and Maximum Ratings
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS ∆BVDSS / ∆TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C) - Derate above 25°C
Operating and Storage Temperature Range
FQT7N10
Typical Characteristics (Continued)
Figure 5. Capacitance Characteristics
Capacitance [pF]
©2001 Fairchild Semiconductor Corporation
VGS, Gate-Source Voltage [V]
IDR , Reverse Drain Current [A]
Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
Thermal Characteristics
Symbol
Parameter
RθJA
Thermal Resistance, Junction-to-Ambient *
VGS = 0 V, ID = 250 µA
100 --
ID = 250 µA, Referenced to 25°C -- 0.1
IDSS
Zero Gate Voltage Drain Current
VDS = 100 V, VGS = 0 V VDS = 80 V, TC = 125°C