SSF-EX2573ID-TR;中文规格书,Datasheet资料

TransistorsRev.A 1/32.5V Drive Nch+Nch MOSFETQS5K2z Structure z Dimensions (Unit : mm) Silicon N-channel MOSFETz Features1) Low On-resistance.3) Space saving, small surface mount package (TSMT5).zSwitchingz Packaging specifications z Inner circuitz Absolute maximum ratings (T a=25°C)∗1∗2∗1ParameterV V DSS Symbol V V GSS A I DA I DP A I SAI SP W / TOTAL P D °C Tch °CTstgLimits Unit Drain-source voltage Gate-source voltage Drain current Total power dissipation Channel temperatureRange of storage temperatureContinuous Pulsed Continuous Pulsed∗1 Pw ≤10µs, Duty cycle ≤1%∗2 Mounted on a ceramic boardSource current (Body diode)30150−55 to +15012±2.0±8.00.83.21.25W / ELEMENT0.9<It is the same ratings for the Tr1 and Tr2>z Thermal resistanceParameter°C/W Rth(ch-a)Symbol Limits Unit Channel to ambient100°C/W139∗ Mounted on a ceramic board∗TransistorsRev.A 2/3z Electrical characteristics (T a=25°C)z Body diode characteristics (Source-drain) (T a=25°C)V SD −−1.2VI S = 3.2A, V GS =0VForward voltage∗ PulsedParameter Symbol Min.Typ.Max.UnitConditions∗<It is the same characteristics for the Tr1 and Tr2>TransistorsRev.A 3/3DRAIN-SOURCE VOLTAGE : V DS (V)101001000C A P A C I T A N C E : C (p F )Fig.1 Typical Capacitancevs. Drain-Source VoltageGATE-SOURCE VOLTAGE : V GS (V)0.0010.010.1110D R A I N C U R RE N T : I D (A )Fig.4 Typical Transfer CharacteristicsSOURCE-DRAIN VOLTAGE : V SD(V)S O U R C E C U R R E N T : I S (A )Fig.6 Source Current vs. Source-Drain VoltageGATE-SOURCE VOLTAGE : V GS (V)100200300S T A T I C D R A I N -S O U R C E O N -S T A T E R E S I S TA N C E : R D S (m Ω)Fig.5 Static Drain-SourceOn-State Resistance vs.Gate source Voltagez Electrical characteristics curvesDRAIN CURRENT : I D (A)1101001000S W I T C H I N G T I M E : t (n s )Fig.2 Switching CharacteristicsTOTAL GATE CHARGE : Qg (nC)123456G A T E -S O U R C E V O L T A G E : V G S (V )Fig.3 Dynamic Input CharacteristicsDRAIN CURRENT : I D (A)S T A T I C D R A I N -S O U R C E O N -S T A T E R E S I S T A N C E : R D S (o n ) (m Ω)Fig.7 Static Drain-Source On-State Resistance vs. Drain Current ( Ι )DRAIN CURRENT : I D (A)S T A T I C D R A I N -S O U R C E O N -S T A T E R E S I S T A N C E : R D S (o n ) (m Ω)Fig.8 Static Drain-Source On-State Resistance vs. Drain Current ( ΙΙ )DRAIN CURRENT : I D (A)S T A T I C D R A I N -S O U R C E O N -S T A T E R E S I S T A N C E : R D S (o n ) (m Ω)Fig.9 Static Drain-Source On-State Resistance vs. Drain Current ( ΙΙΙ )AppendixAbout Export Control Order in JapanProducts described herein are the objects of controlled goods in Annex 1 (Item 16) of Export T rade ControlOrder in Japan.In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.Appendix1-Rev1.1分销商库存信息: ROHMQS5K2TR。

TransistorsRev.B 1/2General purpose amplification (−30V, −1A)2SB1733z ApplicationLow frequency amplifier Driverz Features1) A collector current is large.2) Collector saturation voltage is low. V CE (sat) : max. −350mV at Ic = −500mA / I B = −25mA z Dimensions (Unit : mm)z Absolute maximum ratings (T a=25°C)ParameterSymbol V CBO V CEO V EBO I C I CPP C Tj TstgLimits −30−30−6−10.4150−55 to +150−2∗1Unit V V V A A W °C °C∗20.8W ∗3∗1∗2∗3Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipationJunction temperatureRange of storage temperatureSingle pulse, P W =1msEach Terminal Mounted on a Recommended land pattern Mounted on a 25mm ×25mm × t 0.8mm ceramic substratez Packaging specificationsz Electrical characteristics (T a=25°C)ParameterSymbol Min.Typ.Max.Unit ConditionsV CB =−10V, I E =0A, f =1MHzf T −320−MHz V CE =−2V, I E =100mA, f =100MHz BV CBO −30−−V I C =−10µA BV CEO −30−−V I C =−1mA BV EBO −6−−V I E =−10µA I CBO −−−100nA V CB =−30V I EBO −−−100nA V EB =−6VV CE(sat)−−150−350mV I C =−500mA, I B =−25mA h FE 270−680−V CE =−2V, I C =−100mA Cob −7−pF∗∗Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff currentCollector-emitter saturation voltage DC current gainTransition frequencyCorrector output capacitance∗ PulsedTransistorsRev.B 2/2z Electrical characteristic curvesCOLLECTOR CURRENT : I C (A)D C C U R RE N T G A I N : hF EFig.1 DC current gainvs. collector currentCOLLECTOR CURRENT : I C (A)B A S E S A T U R A T I O N V O L T A G E : V B E (s a t ) (V )C O L L E C T O R S A T U R A T I O N V O L T A G E : V C E (sa t ) (V )Fig.2 Collector-emitter saturation voltagebase-emitter saturation voltage vs. collector currentCOLLECTOR CURRENT : I C(A)C O L L E C T O R S A T U R A T I O N V O L T A G E : V C E (s a t ) (V )Fig.3 Collector-emitter saturation voltagevs. collector currentBASE TO EMITTER CURRENT : V BE (V)C O L L EC T O R C U R R E N T : I C (A )Fig.4 Grounded emitter propagationcharacteristicsEMITTER CURRENT : I E (A)T R A N S I T I O N F R E Q U E N C Y : f T (M H z )Fig.5 Gain bandwidth productvs. emitter currentCOLLECTOR CURRENT : I C (A)Fig.6 Switching timeS W I T C H I N G T I M E : (n s )C O L L E C T O R O U T P U T C A P A C I T A N C E : C o b (p F )E M I T T E R I N P U T C A P A C I T A N C E : C i b (pF )Fig.7 Collector output capacitancevs. collector-base voltage Emitter input capacitance vs. emitter-base voltageEMITTER TO BASE VOLTAGE : V EB (V)COLLECTOR TO BASE VOLTAGE : V CB (V)AppendixAbout Export Control Order in JapanProducts described herein are the objects of controlled goods in Annex 1 (Item 16) of Export T rade ControlOrder in Japan.In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.Appendix1-Rev1.1分销商库存信息: ROHM2SB1733TL。

RGSB RGJA VCE(SAT) VBE ICES IEBO fT CCBO
K/W K/W V V nA µA nA MHz pF IC = 500mA, IB = 50mA VCE = 1.0V, IC = 300mA VCE = 45V VCE = 25V, Tj = 150°C VEB = 4.0V VCE = 5.0V, IC = 10mA, f = 50MHz VCB = 10V, f = 1.0MHz

Revision: A
/
2 of 4
2011/01/01
BC817-16 thru BC817-40
MCC
Micro Commercial Components
TM

Revision: A
/
G K F
C
B
C
B
E
E
Maximum Ratings @ 25oC Unless Otherwise Specified
Charateristic Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current Peak Emitter Current Power Dissipation@T s=50 C(Note1) Operating & Storage Temperature
MCC
TM
Micro Commercial Components

omponents 20736 Marilla Street Chatsworth !"# $
% !"#
BC817-16 THRU BC817-40

Notes 1
1, 2
1, 2, 3 1 6
Min
Typ
Max
259.861
Units MHz
13.3
15.5
dB
13.8 14.5
MHz
1
1.5
1
1 1
dBP-P
1
1
1.15
40
60
nsP-P
40
120
36
43
30
40
dB
18
36
-40
+85
°C
-18
ppm/°C
L & C Match to 150 ohms
SF2025B
259.861 MHz
SAW Filter
Absolute Maximum Ratings
Rating Maximum Incident Power in Passband Max. DC voltage between any 2 terminals Storage Temperature Range Suitable for lead-free soldering - Max Soldering Temperature
Fax: (972) 387-8148
RFM Europe
Phone: 44 1963 251383
Fax: 44 1963 251510
©1999 by RF Monolithics, Inc. The stylized RFM logo are registered trademarks of RF Monolithics, Inc.
inal center frequency, fc.