ZXTP25100BFHTA;中文规格书,Datasheet资料

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ZXTP25100BFH100V, SOT23, PNP medium power transistorSummaryBV (BR)CEX > -140V, BV (BR)CEO > -100V BV (BR)ECX > -7V ;I C(cont) = -2AV CE(sat) < -130mV @ -1A R CE(sat) = 108m ⍀ typical P D = 1.25WComplementary part number ZXTN25100BFHDescriptionAdvanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium.Features•High power dissipation SOT23 package •High peak current •Low saturation voltage •140V forward blocking voltaget •7V reverse blocking voltageApplications•MOSFET and IGBT gate driving •DC - DC converters •Motor drive•Relay, lamp, and solenoid driveOrdering informationDevice marking056DeviceReel size(inches)Tape widthQuantity per reelZXTP25100BF H TA78mm 3,000Absolute maximum ratingsNOTES:(a)For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.(b)Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions. (c)Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions. (d)As (c) above measured at t<5secs.ParameterSymbol Limit Unit Collector-base voltageV CBO -140V Collector-emitter voltage (forward blocking)V CEX -140V Collector-emitter voltageV CEO -100V Emitter-collector voltage (reverse blocking)V ECX -7V Emitter-base voltageV EBO -7V Continuous collector current (b)I C -2A Peak pulse currentI CM -5A Power dissipation at T A =25°C (a)Linear derating factorP D 0.735.84W mW/°C Power dissipation at T A =25°C (b)Linear derating factorP D 1.058.4W mW/°C Power dissipation at T A =25°C (c)Linear derating factorP D 1.259.6W mW/°C Power dissipation at T A =25°C (d)Linear derating factorP D 1.8114.5W mW/°C Operating and storage temperature rangeT j , T stg-55 to 150°CThermal resistanceParameterSymbol Limit Unit Junction to ambient (a)R ⍜JA 171°C/W Junction to ambient (b)R ⍜JA 119°C/W Junction to ambient (c)R ⍜JA 100°C/W Junction to ambient (d)R ⍜JA69°C/WCharacteristicsElectrical characteristics (at T AMB = 25°C unless otherwise stated)ParameterSymbolMin.Typ.Max.Unit Conditions Collector-base breakdown voltageBV CBO -140-165V I C = -100␮A Collector-emitter breakdown voltage (forward blocking)BV CEX-140-165VI C = -100␮A, R BE < 1k ⍀ or-0.25V < V BE < 1V Collector-emitterbreakdown voltage (base open)BV CEO-100-125VI C = -10mA (*)Emitter-collector breakdown voltage (reverse blocking)BV ECX-78.2VI E = -100␮A, R BC < 1k ⍀ or-0.25V < V BC < 0.25V Emitter-base breakdown voltageBV EBO -7-8.2V I E = -100␮ACollector cut-off current I CBO <-1-50-20nA ␮A V CB = -112VV CB = -112V, T AMB = 100°C Collector emitter cut-off currentI CEX--100nAV CE = -112V; R BE < 1k ⍀ or-0.25V < V BE < 1V Emitter cut-off current I EBO <-1-50nA V EB = -5.6VCollector-emitter saturation voltageV CE(sat)-60-90mV I C = -0.5A, I B = -50mA (*)NOTES:(*)Measured under pulsed conditions. Pulse width Յ 300␮s; duty cycle Յ2%.-240-350mV I C = -0.5A, I B = -10mA (*)-100-130mV I C = -1A, I B = -100mA (*)-215-295mV I C = -2A, I B = -200mA (*)Base-emitter saturation voltageV BE(sat)-900-1000mV I C = -2A, I B = -200mA (*)Base-emitter turn-on voltageV BE(on)-830-950mVI C = -2A, V CE = -2V (*)Static forward current transfer ratioh FE100200300I C = -10mA, V CE = -2V (*)55105I C = -1A, V CE = -2V (*)1525I C = -2A, V CE = -2V (*)Transition frequency f T 200MHzI C = -100mA, V CE = -5V f = 100MHzOutput capacitance C OBO 1525pF V CB = -10V, f = 1MHz (*)Turn-on time t (on)31ns V CC = -10V, I C = -500mA, I B1 = I B2= -50mATurn-off timet (off)384nsTypical characteristicsFor international sales offices visit /officesZetex products are distributed worldwide. For details, see /salesnetworkThis publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned.The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.EuropeZetex GmbHStreitfeldstraße 19D-81673 München GermanyTelefon: (49) 89 45 49 49 0Fax: (49) 89 45 49 49 49europe.sales@AmericasZetex Inc700 Veterans Memorial Highway Hauppauge, NY 11788USATelephone: (1) 631 360 2222Fax: (1) 631 360 8222usa.sales@Asia PacificZetex (Asia Ltd)3701-04 Metroplaza Tower 1Hing Fong Road, Kwai Fong Hong KongTelephone: (852) 26100 611Fax: (852) 24250 494asia.sales@Corporate HeadquartersZetex Semiconductors plcZetex Technology Park, Chadderton Oldham, OL9 9LL United KingdomTelephone: (44) 161 622 4444Fax: (44) 161 622 4446hq@Package outline - SOT23Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in incheslimeters Inches limeters Inches Min.Max.Min.Max.Min.Max.Max.Max.A 2.67 3.050.1050.120H 0.330.510.0130.020B 1.20 1.400.0470.055K 0.010.100.00040.004C - 1.10-0.043L 2.10 2.500.0830.0985D 0.370.530.0150.021M 0.450.640.0180.025F 0.0850.150.00340.0059N 0.95 NOM 0.0375 NOMG1.90 NOM 0.075 NOM-----分销商库存信息: DIODESZXTP25100BFHTA。