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PMEG3002AEB,115;中文规格书,Datasheet资料

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DATA SHEET

Product data sheet 2002 May 06

PMEG3002AEB

Low VF MEGA Schottky barrier

diodeM3D319

http://oneic.com/2002 May 062

NXP SemiconductorsProduct data sheet

Low VF MEGA Schottky barrier diodePMEG3002AEB

FEATURES

•Forward current: 0.2 A

•Reverse voltage: 30 V

•Very low forward voltage

•Ultra small SMD package.

APPLICATIONS

•Ultra high-speed switching

•High efficiency DC/DC conversion

•Voltage clamping

•Inverse-polarity protection

•Low voltage rectification

•Low power consumption applications.

DESCRIPTION

Planar Maximum Efficiency General Application (MEGA) Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a SOD523 (SC-79) ultra small SMD plastic package.PINNINGPINDESCRIPTION

1cathode

2anode

12

MGU328

Fig.1Simplified outline (SOD523; SC-79) and symbol.Marking code: B1.The marking bar indicates the cathode.

LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOLPARAMETERCONDITIONSMIN.MAX.UNIT

VRcontinuous reverse voltage−30V

IFcontinuous forward current−200mA

IFRMrepetitive peak forward currenttp ≤ 1 s; δ ≤ 0.5−300mA

IFSMnon-repetitive peak forward currenttp = 8.3 ms half sinewave; JEDEC method−1A

Tstgstorage temperature−65+150°C

Tjjunction temperature−125°C

Tamboperating ambient temperature −65+125°C

http://oneic.com/2002 May 063

NXP SemiconductorsProduct data sheet

Low VF MEGA Schottky barrier diodePMEG3002AEB

ELECTRICAL CHARACTERISTICSTamb = 25 °C; unless otherwise specified.

Note

1.Pulsed test: tp = 300 μs; δ = 0.02.

THERMAL CHARACTERISTICS

Note

1.Refer to SOD523 (SC-79) standard mounting conditions.SYMBOLPARAMETERCONDITIONSTYP.MAX.UNIT

VFcontinuous forward voltagesee Fig.2

IF = 0.1 mA130190mV

IF = 1 mA190250mV

IF = 10 mA255300mV

IF = 100 mA355400mV

IF = 200 mA420480mV

IRcontinuous reverse currentVR = 10 V; see Fig.3; note 12.510μA

Cddiode capacitanceVR = 1 V; f = 1 MHz; see Fig.42025pF

SYMBOLPARAMETERCONDITIONSVALUEUNIT

Rth j-athermal resistance from junction to ambientnote 1450K/W

http://oneic.com/2002 May 064

NXP SemiconductorsProduct data sheet

Low VF MEGA Schottky barrier diodePMEG3002AEB

GRAPHICAL DATA

handbook, halfpage

100.20.40.6IF(mA)

0.8VF (V)104

103

102

10

1MHC187

(1)(2)(3)

Fig.2Forward current as a function of forward voltage; typical values.(1)Tamb = 125 °C.(2)Tamb = 85 °C.(3)Tamb = 25 °C.

handbook, halfpage

3010020IR(μA)

VR (V)104

103

102

10

1MHC188

(1)

(2)

(3)

Fig.3Reverse current as a function of reverse voltage; typical values.(1)Tamb = 125 °C.(2)Tamb = 85 °C.(3)Tamb = 25 °C.

handbook, halfpage

01020Cd(pF)

30VR (V)40

30

10

02035

25

515MHC189

Fig.4Diode capacitance as a function of reverse voltage; typical values.f = 1 MHz; Tamb = 25 °C.

http://oneic.com/2002 May 065 NXP SemiconductorsProduct data sheet

Low VF MEGA Schottky barrier diodePMEG3002AEB

PACKAGE OUTLINE

REFERENCESOUTLINEVERSIONEUROPEANPROJECTIONISSUE DATE IEC JEDEC JEITA

SOD523SC-7998-11-2502-12-13Plastic surface mounted package; 2 leadsSOD523

00.51 mmscaleD

12HE

EbpAc

vMA

A

UNITbpcDEv

mmAHEDIMENSIONS (mm are the original dimensions)

Note1. The marking bar indicates the cathode.(1)0.340.260.170.110.10.850.751.251.150.650.581.651.55

http://oneic.com/2002 May 066

NXP SemiconductorsProduct data sheet

Low VF MEGA Schottky barrier diodePMEG3002AEB

DATA SHEET STATUS

Notes

1.Please consult the most recently issued document before initiating or completing a design.

2.The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DOCUMENTSTATUS(1)PRODUCT STATUS(2)DEFINITION

Objective data sheetDevelopmentThis document contains data from the objective specification for product development.

Preliminary data sheetQualificationThis document contains data from the preliminary specification.

Product data sheetProductionThis document contains the product specification.

DISCLAIMERS

General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.

Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.

Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.

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