PMEG3030BEP,115;中文规格书,Datasheet资料

  • 格式:pdf
  • 大小:108.12 KB
  • 文档页数:11

103 Zth(j-a) (K/W)
102
10
duty cycle =
1 0.75
0.5 0.33
0.25 0.2
0.1 0.05
0.02 0.01
1 0
006aab790
10−1
10−3
10−2
10−1
1
10
102
103

tp (s)
FR4 PCB, standard footprint Fig 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMEG3030BEP_1
Product data sheet
/
Rev. 01 — 27 October 2009
© NXP B.V. 2009. All rights reserved.
4 of 13
NXP Semiconductors
PMEG3030BEP
3 A low VF MEGA Schottky barrier rectifier
6. Thermal characteristics
Table 6. Symbol Rth(j-a)
Thermal characteristics Parameter thermal resistance from junction to ambient
Conditions in free air
Rth(j-sp)
7. Characteristics
Table 7. Characteristics Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
VF
forward voltage
IF = 0.1 A
IF = 0.5 A
IF = 1 A IF = 1.5 A
1.2 Features
I Average forward current: IF(AV) ≤ 3 A I Reverse voltage: VR ≤ 30 V I Low forward voltage I High power capability due to clip-bond technology I AEC-Q101 qualified I Small and flat lead SMD plastic package
103 Zth(j-a) (K/W)
102
10
1
duty cycle =
1 0.75
0.5 0.33
0.25 0.2
0.1 0.05
0.02 0.01
0
006aab791
10−1
10−3
10−2
10−1
1
10
102
103
tp (s)
FR4 PCB, mounting pad for cathode 1 cm2 Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
1.4 Quick reference data
Table 1. Quick reference data Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max
IF(AV)
average forward current
Table 5. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Tj
junction temperature
PMEG3030BEP_1
Product data sheet
/
Rev. 01 — 27 October 2009
© NXP B.V. 2009. All rights reserved.
3 of 13
NXP Semiconductors
PMEG3030BEP
3 A low VF MEGA Schottky barrier rectifier
150
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.
Unit
A A V mV µA
/
NXP Semiconductors
PMEG3030BEP
total power dissipation
Tamb ≤ 70 °C Tsp ≤ 140 °C square wave; tp = 8 ms Tamb ≤ 25 °C
[1] -
[2] -
[3][4] [3][5] -
[3][1] -
Max Unit
30
V
3
A
3
A
50
A
625
mW
1050 mW
2100 mW
PMEG3030BEP_1
Product data sheet
/
Rev. 01 — 27 October 2009
© NXP B.V. 2009. All rights reserved.
2 of 13
NXP Semiconductors
PMEG3030BEP
3 A low VF MEGA Schottky barrier rectifier
3 A low VF MEGA Schottky barrier rectifier
2. Pinning information
Table 2. Pin 1 2
Pinning Description cathode anode
[1] The marking bar indicates the cathode.
102
Zth(j-a) (K/W)
10
duty cycle = 1 0.75 0.5 0.33
0.25 0.2
0.1 0.05
0.02 0.01 1
0
006aab792
10−1
10−3
10−2
10−1
1
10
102
103
tp (s)
Ceramic PCB, Al2O3, standard footprint Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
3. Ordering information
Simplified outline
[1]
1
2
Graphic symbol
1
2
sym001
Table 3. Ordering information
Type number Package
Name Description
PMEG3030BEP -
plastic surface-mounted package; 2 leads
[2] Reflow soldering is the only recommended soldering method. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. [5] Device mounted on a ceramic PCB, Al2O3, standard footprint. [6] Soldering point of cathode tab.
IF = 2 A IF = 3 A
IR
reverse current
VR = 5 V
VR = 10 V
VR = 30 V
Cd
diode capacitance f = 1 MHz
1.3 Applications
I Low voltage rectification I High efficiency DC-to-DC conversion I Switch Mode Power Supply (SMPS) I Reverse polarity protection I Low power consumption applications
PMEG3030BEP
3 A low VF MEGA Schottky barrier rectifier
Rev. 01 — 27 October 2009
Product data sheet
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD128 small and flat lead Surface-Mounted Device (SMD) plastic package.