BC807−16LT1,BC807−25LT1, BC807−40LT1 General Purpose TransistorsPNP SiliconFeatures•Pb−Free Packages are AvailableMAXIMUM RATINGSMaximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.THERMAL CHARACTERISTICS2.Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.ORDERING INFORMATIONELECTRICAL CHARACTERISTICS (T= 25°C unless otherwise noted.)ON CHARACTERISTICSSMALL−SIGNAL CHARACTERISTICSDEVICE ORDERING INFORMATIONI C , COLLECTOR CURRENT (mA)Figure 1. DC Current Gainh F E , D C C U R R E N T G A I N100010100I B , BASE CURRENT (mA)Figure 2. Saturation Region I C , COLLECTOR CURRENT (mA)Figure 3. “On” Voltages100101.0V R , REVERSE VOLTAGE (VOLTS)Figure 4. Temperature Coefficients +1.0I C , COLLECTOR CURRENTFigure 5. Capacitances−2.0−1.0V C E , C O L L E C T O R −E M I T T E R V O L T A G E (V O L T S )V , V O L T A G E (V O L T S )V , T E M P E R A T U R E C O E F F I C I E N T S (m V /C )°θC , C A P A C I T A N C E (p F )−1.0−0.8−0.6−0.4−0.20−1.0−0.8−0.6−0.4−0.2PACKAGE DIMENSIONSSOT−23 (TO−236)CASE 318−09ISSUE AI*For additional information on our Pb−Free strategy and solderingdetails, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.SOLDERING FOOTPRINT*ǒmm inchesǓSCALE 10:1DIM A MIN MAX MIN MAX MILLIMETERS 0.11020.1197 2.80 3.04INCHES B 0.04720.0551 1.20 1.40C 0.03850.04980.99 1.26D 0.01400.02000.360.50G 0.06700.0826 1.70 2.10H 0.00400.00980.100.25J 0.00340.00700.0850.177K 0.01800.02360.450.60L 0.03500.04010.89 1.02S 0.08300.0984 2.10 2.50V0.01770.02360.450.60NOTES:1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.2.CONTROLLING DIMENSION: INCH.3.MAXIUMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.4.318−01, −02, AND −06 OBSOLETE, NEW STANDARD 318−09.V STYLE 6:PIN 1.BASE2.EMITTER3.COLLECTORON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.PUBLICATION ORDERING INFORMATION。
BC846- BC850 NPN Epitaxial Silicon TransistortmAugust 2006BC846- BC850NPN Epitaxial Silicon Transistor Features•Switching and Amplifier Applications•Suitable for automatic insertion in thick and thin-film circuits •Low Noise: BC849, BC850•Complement to BC856 ... BC860Absolute Maximum Ratings* T a= 25°C unless otherwise noted* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.Electrical Characteristics* T a =25°C unless otherwise noted* Pulse Test: Pulse Width ≤300µs, Duty Cycle ≤2%SymbolParameterValueUnitsV CBOCollector-Base Voltage : BC846: BC847/850 : BC848/849805030V V V V CEOCollector-Emitter Voltage : BC846: BC847/850 : BC848/849654530V V V V EBO Emitter-Base Voltage : BC846/847: BC848/849/85065V V I C Collector Current (DC)100mA P C Collector Power Dissipation 310mW T J Junction Temperature 150°C T STGStorage Temperature-65 ~ 150°CSymbolParameterTest ConditionMin.Typ.Max.UnitsI CBO Collector Cut-off Current V CB =30V, I E =015nA h FE DC Current GainV CE =5V, I C =2mA110800V CE (sat)Collector-Emitter Saturation Voltage I C =10mA, I B =0.5mAI C =100mA, I B =5mA 90200250600mV mV V BE (sat)Collector-Base Saturation Voltage I C =10mA, I B =0.5mA I C =100mA, I B =5mA 700900mV mVV BE (on)Base-Emitter On Voltage V CE =5V, I C =2mA V CE =5V, I C =10mA 580660700720mV mV f T Current Gain Bandwidth Product V CE =5V, I C =10mA, f=100MHz300MHzC ob Output Capacitance V CB =10V, I E =0, f=1MHz 3.56pF C ib Input Capacitance V EB =0.5V, I C =0, f=1MHz 9pFNFNoise Figure: BC846/847/848 : BC849/850V CE = 5V, I C = 200µA R G =2K Ω, f=1KHz 21.2104dB dB : BC849 : BC850V CE = 5V, I C = 200µAR G =2K Ω, f=30~15000Hz1.41.443dB dB1. Base2. Emitter3. CollectorSOT-23123BC846- BC850 NPN Epitaxial Silicon Transistorh FE ClassificationOrdering InformationNote1 : Affix “-A,-B,-C” means hFE classification. Affix “-M” means the matte type package. Affix “-TF” means the tape & reel type packing.ClassificationA B C h FE110 ~ 220200 ~ 450420 ~ 800Device (note1)Device MarkingPackagePacking MethodQty(pcs)Pin DifinitionsBC846AMTF 8AA SOT-23Tape & Reel 3000 1.Base 2.Emitter 3.Collector BC846BMTF 8AB SOT-23Tape & Reel 3000 1.Base 2.Emitter 3.Collector BC846CMTF 8AC SOT-23Tape & Reel 3000 1.Base 2.Emitter 3.Collector BC847AMTF 8BA SOT-23Tape & Reel 3000 1.Base 2.Emitter 3.Collector BC847BMTF 8BB SOT-23Tape & Reel 3000 1.Base 2.Emitter 3.Collector BC847CMTF 8BC SOT-23Tape & Reel 3000 1.Base 2.Emitter 3.Collector BC848AMTF 8CA SOT-23Tape & Reel 3000 1.Base 2.Emitter 3.Collector BC848BMTF 8CB SOT-23Tape & Reel 3000 1.Base 2.Emitter 3.Collector BC848CMTF 8CC SOT-23Tape & Reel 3000 1.Base 2.Emitter 3.Collector BC849AMTF 8DA SOT-23Tape & Reel 3000 1.Base 2.Emitter 3.Collector BC849BMTF 8DB SOT-23Tape & Reel 3000 1.Base 2.Emitter 3.Collector BC849CMTF 8DC SOT-23Tape & Reel 3000 1.Base 2.Emitter 3.Collector BC850AMTF 8EA SOT-23Tape & Reel 3000 1.Base 2.Emitter 3.Collector BC850BMTF 8EB SOT-23Tape & Reel 3000 1.Base 2.Emitter 3.Collector BC850CMTF8ECSOT-23Tape & Reel30001.Base2.Emitter3.CollectorBC846- BC850 NPN Epitaxial Silicon TransistorBC846- BC850 NPN Epitaxial Silicon TransistorTRADEMARKSThe following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.BC846- BC850 NPN Epitaxial Silicon TransistorDISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPE-CIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONS Definition of TermsDatasheet IdentificationProduct StatusDefinitionAdvance InformationFormative or In DesignThis datasheet contains the design specifications for product development. Specifications may change in any manner without notice.Preliminary First ProductionThis datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.No Identification Needed Full ProductionThis datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.Obsolete Not In ProductionThis datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.FACT Quiet Series™GlobalOptoisolator™GTO™HiSeC™I 2C™i-Lo ™ImpliedDisconnect™IntelliMAX™ISOPLANAR™LittleFET™MICROCOUPLER™MicroFET™MicroPak™MICROWIRE™MSX™MSXPro™OCX™OCXPro™OPTOLOGIC ®OPTOPLANAR™PACMAN™POP™Power247™PowerEdge™PowerSaver™PowerTrench ®QFET ®QS™QT Optoelectronics™Quiet Series™RapidConfigure™RapidConnect™µSerDes™ScalarPump™SILENT SWITCHER ®SMART START™SPM™Stealth™SuperFET™SuperSOT™-3SuperSOT™-6SuperSOT™-8SyncFET™TCM™TinyBoost™TinyBuck™TinyPWM™TinyPower™TinyLogic ®TINYOPTO™TruTranslation™UHC™UltraFET ®UniFET™VCX™Wire™ACEx™ActiveArray™Bottomless™Build it Now™CoolFET™CROSSVOLT ™DOME™EcoSPARK™E 2CMOS™EnSigna™FACT™FAST ®FASTr™FPS™FRFET™Across the board. Around the world.™The Power Franchise ®Programmable Active Droop™Rev. I20。
