BC846BT中文资料
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VCEsat VBE Cc Ce fT F Note
collector-emitter saturation voltage base-emitter voltage collector capacitance emitter capacitance transition frequency noise figure
IC/IB = 10. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C.
Fig.8
Collector-emitter saturation voltage as a function of collector current; typical values.
GRAPHICAL INFORMATION BC847CT
MGT731
BC846T; BC847T series
handbook, halfpage
1200
handbook, halfpage
hFE 1000
(1)
1200 VBE (mV) 1000
MGT732
800
(2)
800
(1)
(2)
600
600
MGT729
handbook, halfpage
1200 VBEsat (mV) 1000
MGT730
(1)
800
(2)
600
(3)
102
(1)
400
(3) (2)
200
10 10−1
1
10
102 I C (mA)
103
0 10−1
1
10
102 I C (mA)
103
IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C.
BC846T; BC847T series
CONDITIONS in free air; note 1
VALUE 833
UNIT K/W
MIN. − − − 110 200 420 − − − − − − − − − − −
TYP.
MAX. 15 5 100 220 450 800 200 400 700 770 1.5 − − 10
GRAPHICAL INFORMATION BC847BT
MGT727
BC846T; BC847T series
handbook, halfpage
600
handbook, halfpage
(1)
hFE 500
1200 VBE (mV) 1000
MGT728
(1)
400
(2)
800
(2)
300
600
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO PARAMETER collector-base voltage BC846AT; BC846BT BC847AT; BC847BT; BC847CT VCEO collector-emitter voltage BC846AT; BC846BT BC847AT; BC847BT; BC847CT VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open collector open base − − − − − − − −65 − −65 65 45 5 100 200 100 150 +150 150 +150 V V V mA mA mA mW °C °C °C CONDITIONS open emitter − − 80 50 V V MIN. MAX. UNIT
(3)
400
100 200
0 10−1
1
10
102 I C (mA)
103
0 10−1 VCE = 5 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C.
1
10
102 I C (mA)
103
VCE = 5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C.
2000 Nov 15
2
Philips Semiconductors
Product specification
NPN general purpose transistors
THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER CONDITIONS PARAMETER thermal resistance from junction to ambient
IC/IB = 10. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C.
Fig.4
Collector-emitter saturation voltage as a function of collector current; typical values.
Fig.3 Fig.2 DC current gain; typical values.
Base-emitter voltage as a function of collector current; typical v (mV)
UNIT nA µA nA
collector-base cut-off current VCB = 30 V; IE = 0 VCB = 30 V; IE = 0; Tj = 150 °C emitter cut-off current DC current gain BC846AT; BC847AT BC846BT; BC847BT BC847CT VEB = 5 V; IC = 0 VCE = 5 V; IC = 2 mA
Philips Semiconductors
Product specification
NPN general purpose transistors
FEATURES • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching and amplification, especially in portable equipment. DESCRIPTION NPN general purpose transistor in an SC-75 (SOT416) plastic package. PNP complements: BC856T; BC857T series. MARKING TYPE NUMBER BC846AT BC846BT BC847AT BC847BT BC847CT MARKING CODE 1A 1B 1E 1F 1G Fig.1
handbook, halfpage
BC846T; BC847T series
PINNING PIN 1 2 3 base emitter collector DESCRIPTION
3
3 1
1 Top view
2
2
MAM348
Simplified outline (SC-75; SOT416) and symbol.
IC = 10 mA; IB = 0.5 mA; IC = 100 mA; IB = 5 mA; note 1 IC = 2 mA; VCE = 5 V IC = 10 mA; VCE = 5 V VCB = 10 V; f = 1 MHz; IE = ie = 0 VEB = 0.5 V; f = 1 MHz; IC = ic = 0 IC = 10 mA; VCE = 5 V; f = 100 MHz VCE = 5 V; IC = 200 µA; RS = 2 kΩ; f = 1 kHz; B = 200 Hz
(3)
200
(3)
400
100
200
0 10−1
1
10
102 I C (mA)
103
0 10−2
10−1
1
10
102 103 I C (mA)
VCE = 5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C.
VCE = 5 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C.
Fig.9
Base-emitter saturation voltage as a function of collector current; typical values.