ST2N5086中文资料

1A Microsemi Company580 Pleasant St.Phone: 617-924-9280Watertown, MA 02172 Fax: 617-924-1235DIE SPECIFICATIONSWITCHING TRANSISTOR NPN SILICONFEATURES:n ELECTRICAL PERFORMANCE I.A.W. MIL-PRF-19500/255n AVAILABLE IN WAFER OR CHIP FORM FOR HYBRID APPLICATIONS n GENERAL PURPOSE-HIGH SPEED SWITCHING APPLICATIONS n LOW VCE(sat): .3V @ IC = 150 mAdcSymbol ParameterLimit Unit Vceo Collector-Emitter Voltage50Vdc Vcbo Collector-Base Voltage 75Vdc Vebo Emitter-Base Voltage6.0Vdc IcCollector Current- Continuous 800mAdc Tj, TstgOperating Junction & Storage -65 to +200°CTemperature RangeSertech reserves the right to make changes to any product design, specification, or other information at any time without prior notice.Data Sheet, Die, 2N2222A MSW Rev. - 4/15/98Symbol Parameter Conditions Min Max UnitOFF CHARACTERISTICSV(BR)CBO Breakdown Voltage, Collector to Base Bias Cond. D, IC=10uAdc75Vdc V(BR)EBO Breakdown Voltage, Emitter to Base Bias Cond. D, IE=10uAdc6Vdc V(BR)CEO Breakdown Voltage, Collector to Emitter Bias Cond. D, IC= 10mAdc, pulsed50Vdc ICES Collector to Emitter Cutoff Current Bias Cond. D, VCE=50Vdc50nAdc ICBO1Collector to Base Cutoff Current Bias Cond. D, VCB=60Vdc10nAdc IEBO Emitter to Base Cutoff Current Bias Cond. D, VEB= 4Vdc10nAdc ON CHARACTERISTICShFE1Forward-Current Transfer Ratio VCE=10Vdc, IC=0.1mAdc50hFE2Forward-Current Transfer Ratio VCE=10Vdc, IC=1.0mAdc75325hFE3Forward-Current Transfer Ratio VCE=10Vdc, IC=10mAdc100hFE4Forward-Current Transfer Ratio VCE=10Vdc, IC=150mAdc, pulsed100300hFE5Forward-Current Transfer Ratio VCE=10Vdc, IC=500mAdc, pulsed30VCE(sat)1Collector to Emitter Saturation Voltage IC=150mAdc, IB=15mAdc, pulsed0.3Vdc VCE(sat)2Collector to Emitter Saturation Voltage IC=500mAdc, IB=50mAdc, pulsed1Vdc VBE(sat)1Base to Emitter Saturation Voltage IC=150mAdc, IB=15mAdc, pulsed0.6 1.2Vdc VBE(sat)2Base to Emitter Saturation Voltage IC=500mAdc, IB=50mAdc, pulsed2Vdc SMALL SIGNAL CHARACTERISTICShfe Short Circuit Forward Current Xfer Ratio VCE= 10Vdc,IC =1mAdc, f= 1kHz50/hfe/Magnitude of Short Circuit Forward VCE= 20Vdc,IC =50mAdc, f=100MHz 2.5 Current Transfer RatioCobo Output Capacitance VCB= 10Vdc, IE =0, 100kHz< f <1MHz8pF Cibo Input Capacitance VEB= 2.0Vdc, IC=0, 100kHz< f <1MHz25pF SWITCHING CHARACTERISTICSton Saturated Turn-on Time As defined in 19500/255 Figure 845nS toff Saturated Turn-off Time As defined in 19500/255 Figure 9300nS2。

2SK2586Silicon N-Channel MOS FETADE-208-358 C4th. EditionApplicationHigh speed power switchingFeatures• Low on-resistance• R DS(on) = 7 m typ.• High speed switching• 4 V gate drive device can be driven from 5 V sourceOutline2SK25862Absolute Maximum Ratings (Ta = 25°C)ItemSymbol Ratings Unit Drain to source voltage V DSS 60V Gate to source voltage V GSS ±20V Drain current I D *260A Drain peak currentI D(pulse)*1240A Body to drain diode reverse drain current I DR *260A Avalanche current I AP *345A Avalanche energy E AR *3174mJ Channel dissipation Pch*2125W Channel temperature Tch 150°C Storage temperatureTstg–55 to +150°CNotes: 1.PW ≤ 10 µs, duty cycle ≤ 1 %2.Value at Tc = 25°C3.Value at Tch = 25°C, Rg ≥ 50 Ω2SK25863Electrical Characteristics (Ta = 25°C)ItemSymbol Min Typ Max Unit Test Conditions Drain to source breakdown voltageV (BR)DSS 60——V I D = 10 mA, V GS = 0Gate to source breakdown voltageV (BR)GSS ±20——V I G = ±100 µA, V DS = 0Gate to source leak current I GSS ——±10µA V GS = ±16 V, V DS = 0Zero gate voltage drain current I DSS——100µA V DS = 60 V, V GS = 0Gate to source cutoff voltage V GS(off) 1.0— 2.0V I D = 1 mA, V DS = 10 V Static drain to source on state resistanceR DS(on)—710m ΩI D = 30 A V GS = 10 V*1—1016m ΩI D = 30 A V GS = 4 V*1Forward transfer admittance |y fs |3560—S I D = 30 A V DS = 10 V*1Input capacitance Ciss —3550—pF V DS = 10 V Output capacitanceCoss —1760—pF V GS = 0Reverse transfer capacitance Crss —500—pF f = 1 MHz Turn-on delay time t d(on)—35—ns I D = 30 A Rise timet r —260—ns V GS = 10 V Turn-off delay time t d(off)—480—ns R L = 1.0 ΩFall timet f —370—ns Body to drain diode forward voltageV DF —0.94—V I F = 60 A, V GS = 0Body to drain diode reverse recovery time t rr—140—nsI F = 60 A, V GS = 0diF / dt = 50 A / µs Note:1.Pulse TestSee characteristic curves of 2SK2529.2SK25864Hitachi CodeJEDECEIAJWeight (reference value)TO-3P—Conforms5.0 gUnit: mmCautions1.Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,copyright, trademark, or other intellectual property rights for information contained in this document.Hitachi bears no responsibility for problems that may arise with third party’s rights, includingintellectual property rights, in connection with use of the information contained in this document.2.Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use.3.Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,traffic, safety equipment or medical equipment for life support.4.Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installationconditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product.5.This product is not designed to be radiation resistant.6.No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi.7.Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products.Hitachi, Ltd.Semiconductor & Integrated Circuits.Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.Hitachi Asia Pte. 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No.167, Tun-Hwa North Road, Taipei (105)Tel: <886> (2) 2718-3666Fax: <886> (2) 2718-8180Hitachi Asia (Hong Kong) Ltd.Group III (Electronic Components)7/F., North Tower, World Finance Centre,Harbour City, Canton Road, Tsim Sha Tsui,Kowloon, Hong Kong Tel: <852> (2) 735 9218Fax: <852> (2) 730 0281 Telex: 40815 HITEC HXHitachi Europe Ltd.Electronic Components Group.Whitebrook ParkLower Cookham Road MaidenheadBerkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000Fax: <44> (1628) 778322Hitachi Europe GmbHElectronic components Group Dornacher Stra§e 3D-85622 Feldkirchen, Munich GermanyTel: <49> (89) 9 9180-0Fax: <49> (89) 9 29 30 00Hitachi Semiconductor (America) Inc.179 East Tasman Drive,San Jose,CA 95134 Tel: <1> (408) 433-1990Fax: <1>(408) 433-0223For further information write to:。

1N5221B - 1N5267B500mW EPITAXIAL ZENER DIODEFeaturesMaximum Ratings and Electrical Characteristics@ T A = 25°C unless otherwise specified·Case: DO-35·Case Material: Glass·Moisture Sensitivity: Level 1 per J-STD-020C ·Leads: Solderable per MIL-STD-202, Method 208·Terminals: Finish - Sn96.5Ag3.5. Solderable per MIL-STD-202, Method 208·Polarity: Cathode Band ·Marking: Type Number·Weight: 0.13 grams (approximate)·500mW Power Dissipation ·High Stability·Surface Mount Equivalents Available ·Hermetic Package·V Z - Tolerance ±5%·Lead Free Finish, RoHS Compliant (Note 2)Mechanical DataNotes:1. Valid provided that leads are kept at TL £75°C with lead length = 9.5mm (3/8”) from case; derate above 75°C.2.EC Directive 2002/95/EC (RoHS) revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied where applicable,see EU Directive Annex Notes 5 and 7.Electrical Characteristics Table 1@ T A= 25°C unless otherwise specifiedNotes: 3. Based on dc measurement at thermal equilibrium; lead length = 9.5mm (3/8”); thermal resistance of heat sink = 30°C/W.Ordering Information(Note 5)Notes: 4. *Add "-A" or "-T" to the appropriate type number in Table 1. Example: 6.2V Zener= 1N5234B-A for ammo pack.5. For packaging details, visit our website at /datasheets/ap02008.pdf.IMPORTANT NOTICEDiodes Incorporated and its subsidiaries reserve the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein.Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein;neither does it convey any license under its patent rights,nor the rights of others.The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,harmless against all damages.LIFE SUPPORTDiodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated.。