STK2N80中文资料

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2N6387, 2N6388Plastic Medium-Power Silicon TransistorsThese devices are designed for general−purpose amplifier and low−speed switching applications.Features•High DC Current Gain − h FE = 2500 (Typ) @ I C = 4.0 Adc •Collector−Emitter Sustaining V oltage − @ 100 mAdcV CEO(sus)= 60 Vdc (Min) − 2N6387= 80 Vdc (Min) − 2N6388•Low Collector−Emitter Saturation V oltage −V CE(sat)= 2.0 Vdc (Max) @ I C= 5.0 Adc − 2N6387, 2N6388•Monolithic Construction with Built−In Base−Emitter Shunt Resistors •TO−220AB Compact Package•These Devices are Pb−Free and are RoHS Compliant*MAXIMUM RATINGS (Note 1)Rating Symbol Value UnitCollector−Emitter Voltage2N63872N6388V CEO6080VdcCollector−Base Voltage2N63872N6388V CB6080VdcEmitter−Base Voltage V EB 5.0VdcCollector Current− Continuous− Peak I C1015AdcBase Current I B250mAdcTotal Power Dissipation @ T C = 25_C Derate above 25_C P D650.52WW/°CTotal Power Dissipation @ T A = 25_C Derate above 25_C P D 2.00.016WW/°COperating and Storage Junction, Temperature Range TJ, T stg−65 to +150°CStresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.1.Indicates JEDEC Registered Data.THERMAL CHARACTERISTICSCharacteristics Symbol Max Unit Thermal Resistance, Junction−to−Case R q JC 1.92_C/W Thermal Resistance, Junction−to−Ambient R q JA62.5_C/W*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.DARLINGTON NPN SILICON POWER TRANSISTORS8 AND 10 AMPERES65 WATTS, 60 − 80 VOLTSTO−220CASE 221ASTYLE 1342N638x=Device Codex = 7 or 8G=Pb−Free PackageA=Assembly LocationY=YearWW=Work WeekMARKING DIAGRAM2N6388G TO−220(Pb−Free)50 Units / Rail Device Package Shipping 2N6387G TO−220(Pb−Free)50 Units / RailORDERING INFORMATION4020Figure 1. Power DeratingT, TEMPERATURE (°C)P D , P O W E R D I S S I P A T I O N (W A T T S )T A T C 4.02.01.03.0ELECTRICAL CHARACTERISTICS (T C = 25_C unless otherwise noted) (Note 2)CharacteristicSymbolMinMaxUnitOFF CHARACTERISTICSCollector−Emitter Sustaining Voltage (Note 3)(I C = 200 mAdc, I B = 0)2N63872N6388V CEO(sus)6080−−VdcCollector Cutoff Current (V CE = 60 Vdc, I B = 0)2N6387(V CE = 80 Vdc, I B = 0)2N6388I CEO−−1.01.0mAdc Collector Cutoff Current(V CE = 60 Vdc, V EB(off) = 1.5 Vdc)2N6387(V CE − 80 Vdc, V EB(off) = 1.5 Vdc)2N6388(V CE = 60 Vdc, V EB(off) = 1.5 Vdc, T C = 125_C)2N6387(V CE = 80 Vdc, V EB(off) = 1.5 Vdc, T C = 125_C)2N6388I CEX−−−−3003003.03.0m Adc mAdc Emitter Cutoff Current (V BE = 5.0 Vdc, I C = 0)I EBO−5.0mAdcON CHARACTERISTICS (Note 3)DC Current Gain(I C = 5.0 Adc, V CE = 3.0 Vdc)2N6387, 2N6388(I C = 1 0 Adc, V CE = 3.0 Vdc)2N6387, 2N6388h FE100010020,000−−Collector−Emitter Saturation Voltage (I C = 5.0 Adc, I B = 0.01 Adc)2N6387, 2N6388(I C = 10 Adc, I B = 0.1 Adc)2N6387, 2N6388V CE(sat)−−2.03.0Vdc Base−Emitter On Voltage(I C = 5.0 Adc, V CE = 3.0 Vdc)2N6387, 2N6388(I C = 10 Adc, V CE = 3.0 Vdc)2N6387, 2N6388V BE(on)−−2.84.5VdcDYNAMIC CHARACTERISTICSSmall−Signal Current Gain (I C = 1.0 Adc, V CE = 5.0 Vdc, f test = 1.0 MHz)|h fe |20−−Output Capacitance (V CB = 10 Vdc, I E = 0, f = 1.0 MHz)C ob −200pF Small−Signal Current Gain (I C = 1.0 Adc, V CE = 5.0 Vdc, f = 1.0 kHz)h fe1000−−Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.2.Indicates JEDEC Registered Data.3.Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2.0%.Figure 2. Switching Times Test Circuit7.0Figure 3. Switching TimesI C , COLLECTOR CURRENT (AMPS)t , T I M E ( s )μ 5.00.70.30.20.070.11.03.00V CC t r , t f v 10 ns DUTY CYCLE = 1.0%D 1R B AND R C VARIED TO OBTAIN DESIRED CURRENT LEVELSV 1APPROX+ 12 VV 2APPROX- 8 VFOR t d AND t r , D 1 IS DISCONNECTED AND V 2 = 0Figure 4. Thermal Responset, TIME (ms)1.00.010.70.50.30.20.10.070.050.030.02r (t ), T R A N S I E N T T H E R M A L R E S I S T A N C E (N O R M A L I Z E D )20Figure 5. Active-Region Safe Operating Area2.00.030.25.00.5I C , C O L L E C T O R C U R R E N T (A M P S )V CE , COLLECTOR-EMITTER VOLTAGE (VOLTS)101.00.1There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I C − V CE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.The data of Figure 5 is based on T J(pk) = 150_C; T C is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk)< 150_C. T J(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than thelimitations imposed by second breakdown10,000Figure 6. Small−Signal Current Gain f, FREQUENCY (kHz)105003001005000h F E , S M A L L -S I G N A L C U R R E N T G A I N203000200200010003050300Figure 7. CapacitanceV R , REVERSE VOLTAGE (VOLTS)30C , C A P A C I T A N C E (p F )2001007050V C E , C O L L E C T O R -E M I T T E R V O L T A G E (V O L T S)Figure 8. DC Current GainI C , COLLECTOR CURRENT (AMP)500300h F E , D C C U R R E N T G A I N20020,000500010,000300020001000Figure 9. Collector Saturation RegionI B , BASE CURRENT (mA)0- 1.0I C , COLLECTOR CURRENT (AMP)V , V O L T A G E (V O L T S )Figure 10. “On” Voltages 3.02.52.01.51.00.5Figure 11. Temperature CoefficientsI C , COLLECTOR CURRENT (AMP)V , T E M P E R A T U R E C O E F F I C I E N T S (m V /C )°θ- 2.0- 3.0- 4.0- 5.0+ 1.0+ 2.0+ 3.0+ 4.0+ 5.0105Figure 12. Collector Cut−Off Region V BE , BASE-EMITTER VOLTAGE (VOLTS)102101100, C O L L E C T O R C U R R E N T ( A )μI C 10- 1103104Figure 13. Darlington SchematicBASEPACKAGE DIMENSIONSTO−220CASE 221A−09ISSUE AHNOTES:1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.2.CONTROLLING DIMENSION: INCH.3.DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED.DIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.5700.62014.4815.75B 0.3800.4159.6610.53C 0.1600.190 4.07 4.83D 0.0250.0380.640.96F 0.1420.161 3.61 4.09G 0.0950.105 2.42 2.66H 0.1100.161 2.80 4.10J 0.0140.0240.360.61K 0.5000.56212.7014.27L 0.0450.060 1.15 1.52N 0.1900.210 4.83 5.33Q 0.1000.120 2.54 3.04R 0.0800.110 2.04 2.79S 0.0450.055 1.15 1.39T 0.2350.255 5.97 6.47U 0.0000.0500.00 1.27V 0.045--- 1.15---Z---0.080--- 2.04FSEATING PLANESTYLE 1:PIN 1.BASE2.COLLECTOR3.EMITTER4.COLLECTORPUBLICATION ORDERING INFORMATIONON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at /site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended,or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. 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DC OPERATING CONDITIONS
Recommended operating conditions (Voltage referenced to VSS = 0V, TA = 0 to 70°C) Parameter Supply voltage Input logic high voltage Input logic low voltage Output logic high voltage Output logic low voltage Input leakage current Symbol VDD, VDDQ VIH VIL VOH VOL ILI Min 3.0 2.0 -0.3 2.4 -10 Typ 3.3 3.0 0 Max 3.6 VDD+0.3 0.8 0.4 10 Unit V V V V V uA 1 2 IOH = -2mA IOL = 2mA 3 Note
FUNCTIONAL BLOCK DIAGRAM
I/O Control
LWE
Data Input Register
LDQM
Bank Select 4M x 8 Sense AMP 4M x 8 4M x 8 4M x 8 Refresh Counter
Output Buffer
Row Decoder
K4S280832C
PIN CONFIGURATION (Top view)
VDD DQ0 VDDQ N.C DQ1 VSSQ N.C DQ2 VDDQ N.C DQ3 VSSQ N.C VDD N.C WE CAS RAS CS BA0 BA1 A10/AP A0 A1 A2 A3 VDD 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 VSS DQ7 VSSQ N.C DQ6 VDDQ N.C DQ5 VSSQ N.C DQ4 VDDQ N.C VSS N.C/RFU DQM CLK CKE N.C A11 A9 A8 A7 A6 A5 A4 VSS

3
(0.44) 0.88+0.05 – 0.03
I Features
0.12+0.05 – 0.02
1 2
3°
Unit µA nA V V mS pF pF pF
Silicon Junction FETs (Small Signal)
PD Ta
150 240 Ta=25˚C 125 200 200 VGS=0.4V
unit: mm
M Di ain sc te on na tin nc ue e/ d
1.60±0.05 (0.80)
(0.44)
(0.51)
0.28±0.05 (0.51)
(0.80) (0.80) 1.60+0.05 – 0.03
0.60+0.05 – 0.03
I Absolute Maximum Ratings (Ta = 25°C)
Silicon Junction FETs (Small Signal)
2SK2380
Silicon N-Channel Junction FET
For impedance conversion in low frequency For infrared sensor
0.28±0.05
0.80±0.05
Parameter Symbol Gate to Drain voltage VGDO VGSO ID IG
3°
Ratings −40 −40 ±1 10
Unit V V
Gate to Source voltage Drain current Gate current
mA
Allowable power dissipation Channel temperature Storage temperature