AON6560规格书
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Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
-55 to 150
Units V V
A
A A mJ V W
W °C
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
1.4
VGS=10V, ID=20A
RDS(ON) Static Drain-Source On-Resistance
TJ=125°C
VGS=4.5V, ID=20A
gFS
Forward Transconductance
VDS=5V, ID=20A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
Voltage (Note E)
2 ID=20A
1.6
1.2 125°C
0.8
0.4 25°C
IS (A)
40 25°C
20
0
0
1
2
3
4
5
VGS(Volts) Figure 2: Transfer Characteristics (Note E)
1.6
1.4
VGS=10V ID=20A
Normalized On-Resistance
100% UIS Tested 100% Rg Tested
DFN5X6
D
Top View
Bottom View
Top View
PIN1
1
8
2
7
3
6
PIN1
4
5
G S
Orderable Part Number
AON6560
Package Type
DFN 5x6
Form
Tape & Reel
Minimum Order Quantity
25°C
1.0E-04
RDS(ON) (mΩ)
0
2
4
6
8
10
VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts) Figure 6: Body-Diode Characteristics (Note E)
30
IDSS
Zero Gate Voltage Drain Current
VDS=30V, VGS=0V
TJ=55°C
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th) Gate Threshold Voltage
VDS=VGS, ID=250µA
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1.2
1
VGS=4.5V ID=20A
0.8 0
25 50 75 100 125 150 175
Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature
(Note E)
1.0E+01
1.0E+00 1.0E-01
125°C
1.0E-02 1.0E-03
Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V)
30V 200A < 0.68mΩ < 1.1mΩ
Application
• High performance ORing, Efuse • Ultra high current battery charge/discharge
ID(A)
ID (A)
RDS(ON) (mΩ)
40
20
VGS=2.5V
0
0
1
2
3
4
5
VDS (Volts) Figure 1: On-Region Characteristics (Note E)
1.4
1.2 VGS=4.5V
1
0.8
0.6
0.4 VGS=10V
0.2
0
0
5
10
15
20
25ቤተ መጻሕፍቲ ባይዱ
30
ID (A) Figure 3: On-Resistance vs. Drain Current and Gate
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used.
3000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current G
TC=25°C TC=100°C
nC nC ns ns ns ns
ns nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design.
IS
Maximum Body-Diode Continuous CurrentG
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Typ
1.8 0.55 0.8 0.85 100 0.65
11500 3400 3100 1.2
230 130 28 92 16 42 115.5 91.5 38.5 120
Max Units
V
1 µA
5
±100 nA
2.2
V
0.68 mΩ
1
1.1 mΩ
S
1
V
200
A
pF pF pF Ω
325 nC 185 nC
VGS=10V, VDS=15V, ID=20A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time Turn-Off DelayTime
VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
VGS=0V, VDS=15V, f=1MHz f=1MHz
SWITCHING PARAMETERS
Qg(10V) Qg(4.5V) Qgs Qgd tD(on) tr tD(off) tf trr Qrr
Total Gate Charge
Total Gate Charge Gate Source Charge
