5STP 12M5800中文资料
- 格式：pdf
- 大小：381.23 KB
- 文档页数：6
ABB Semiconductors AG reserves the right to change specifications without notice.VDSM=6500VITAVM=1330AITRMS=2080AITSM=22000AVT0=1.20VrT=0.600mΩPhase Control Thyristor
5STP 12M6500
Doc. No. 5SYA1004-03 Sep. 01
•Patented free-floating silicon technology•Low on-state and switching losses•Designed for traction, energy and industrial applications•Optimum power handling capabilityBlockingPart Number5STP5STP 12M62005STP 12M5800ConditionsVDSMVRSM6500 V6200 V5800 Vf = 5 Hz, tp = 10msVDRMVRRM5600 V5300 V4900 Vf = 50 Hz, tp = 10msVRSM17000 V6700 V6300 Vtp = 5ms, single pulseIDSM≤ 600 mAVDSMIRSM≤ 600 mAVRSMTj = 125°C
dV/dtcrit2000 V/µsExp. to 0.67 x VDRM, Tj = 125°CVDRM/ VRRM are equal to VDSM/ VRSM values up to Tj = 110°CMechanical data
FM
Mounting forcenom.50kN
min.45kN
max.60kNaAccelerationDevice unclampedDevice clamped50100m/s2m/s2
mWeight1.85kg
DSSurface creepage distance45mm
DaAir strike distance21mm元器件交易网www.cecb2b.com5STP 12M6500ABB Semiconductors AG reserves the right to change specifications without notice.Doc. No. 5SYA1004-03 Sep. 01 page 2 of 6On-state
ITAVMMax. average on-state current1330AHalf sine wave, TC = 70°C
ITRMSMax. RMS on-state current2080A
ITSMMax. peak non-repetitive22000Atp=10msTj = 125°C
surge current24000Atp=8.3msAfter surge:
I2tLimiting load integral2420kA2stp=10msVD = VR = 0V
2390kA2stp=8.3ms
VTOn-state voltage2.12VIT=1500A
VT0Threshold voltage1.20VIT=670 - 2000ATj = 125°C
rTSlope resistance0.600mΩIHHolding current50-125mATj=25°C
20-75mATj=125°C
ILLatching current150-600mATj=25°C
50-200mATj=125°C
Switching
di/dtcritCritical rate of rise of on-state100A/µsCont. f = 50 HzVD ≤ 0.67⋅VDRM , Tj = 125°Ccurrent200A/µsITRM = 2000 A60 sec.f = 50HzIFG = 2 A, tr = 0.5 µs
tdDelay time≤3.0µsVD = 0.4⋅VDRMIFG = 2 A, tr = 0.5 µs
tqTurn-off time≤800µsVD ≤ 0.67⋅VDRMITRM = 2000 A, Tj = 125°CdvD/dt = 20V/µsVR > 200 V, diT/dt = -1 A/µs
QrrRecovery chargemin1600µAs
max2600µAs
Triggering
VGTGate trigger voltage2.6VTj = 25°
IGTGate trigger current400mATj = 25°
VGDGate non-trigger voltage0.3V VD =0.4 x VDRMIGDGate non-trigger current10mA VD = 0.4 x VDRMVFGMPeak forward gate voltage12V
IFGMPeak forward gate current10A
VRGMPeak reverse gate voltage10V
PGGate power loss3W元器件交易网www.cecb2b.com5STP 12M6500ABB Semiconductors AG reserves the right to change specifications without notice.Doc. No. 5SYA1004-03 Sep. 01 page 3 of 6ThermalTjmaxMax. operating junction temperaturerange125°C
TstgStorage temperature range-40…140°CRthJCThermal resistance24K/kWAnode side cooled
junction to case24K/kWCathode side cooled
12K/kWDouble side cooled
RthCHThermal resistance case to4K/kWSingle side cooled
heat sink2K/kWDouble side cooledAnalytical function for transient thermalimpedance:
)e-(1R = (t)Zn
1i t/-ithJCiå
=τ
i1234Ri(K/kW)7.631.851.780.8τi(s)0.76810.18420.02650.01020.0010.0100.1001.00010.000t[s]051015ZthJC[K/kW]
TM1Fm=45..60kNDouble-sidecooling180°sine:add1K/kW180°rectangular:add1K/kW120°rectangular:add1K/kW60°rectangular:add2K/kW
Fig. 1Transient thermal impedance junction to case.
On-state characteristic model:
ITDiTCiTBAVT⋅++⋅+⋅+=)1ln(
Valid for iT = 200 – 2000 AABCD
1.3280.0002567-0.0920.028
Fig. 2On-state characteristics.Tj=125°C, 10ms half sineFig. 3On-state characteristics.元器件交易网www.cecb2b.com5STP 12M6500
ABB Semiconductors AG reserves the right to change specifications without notice.Doc. No. 5SYA1004-03 Sep. 01 page 4 of 6Fig. 4On-state power dissipation vs. mean on-state current. Turn - on losses excluded.Fig. 5Max. permissible case temperature vs.mean on-state current.
Fig. 6Surge on-state current vs. pulse length.Half-sine wave.Fig. 7Surge on-state current vs. number ofpulses. Half-sine wave, 10 ms, 50Hz.元器件交易网www.cecb2b.com5STP 12M6500ABB Semiconductors AG reserves the right to change specifications without notice.Doc. No. 5SYA1004-03 Sep. 01
page 5 of 6Fig. 8Gate trigger characteristics.Fig. 9Max. peak gate power loss.
Fig. 10Recovery charge vs. decay rate of on-state current.Fig. 11Peak reverse recovery current vs. decay
rate of on-state current.Turn - off time, typical parameter relationship.
Fig. 12tq/tq1 = f1(Tj)Fig. 13tq/tq1 = f2(-diT/dt)Fig. 14tq/tq1 = f3
(dv/dt)tq = tq1 • f1(Tj) • f2(-diT/dt) • f3(dv/dt)tq1 :at normalized values (see page 2)tq : at varying conditions元器件交易网www.cecb2b.com5STP 12M6500ABB Semiconductors AG reserves the right to change specifications without notice.
ABB Semiconductors AGDoc. No. 5SYA1004-03 Sep. 01Fabrikstrasse 3CH-5600 Lenzburg, Switzerland
Telephone+41 (0)62 888 6419Fax+41 (0)62 888 6306Emailabbsem@ch.abb.comInternetwww.abbsem.comTurn-on and Turn-off losses
Fig. 15Won = f(IT, tP), Tj = 125°C.Half sinusoidal waves.Fig. 16Won = f(IT, di/dt), Tj = 125°C.Rectangular waves.
