5STP50Q1800中文资料

V DRM=1800VI T(AV)M=6100AI T(RMS)=9600AI TSM=94×103AV(T0)=0.9Vr T=0.05mΩPhase Control Thyristor5STP 50Q1800Doc. No. 5SYA1070-01 Okt. 03•Patented free-floating silicon technology•Low on-state and switching losses•Designed for traction, energy and industrial applications•Optimum power handling capability•Interdigitated amplifying gateBlockingMaximum rated values 1)Symbol Conditions5STP 50Q1800----V DRM, V RRM f = 50 Hz, t p = 10 ms1800 V -- --V RSM t p = 5 ms, single pulse2000 V -- --dV/dt crit Exp. to 0.67 x V DRM, T vj = 125°C1000 V/µsCharacteristic valuesParameter Symbol Conditions min typ max UnitForward leakage current I DRM V DRM, T vj = 125°C300mA Reverse leakage current I RRM V RRM, T vj = 125°C300mAMechanical dataMaximum rated values 1)Parameter Symbol Conditions min typ max UnitMounting force F M8190108kN Acceleration a Device unclamped50m/s2 Acceleration a Device clamped100m/s2 Characteristic valuesParameter Symbol Conditions min typ max UnitWeight m 2.1kg Housing thickness H F M = 90 kN, T a = 25 °C25.526.5mm Surface creepage distance D S36mm Air strike distance D a15mm1) Maximum rated values indicate limits beyond which damage to the device may occur元器件交易网ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.On-stateMaximum rated values1)ParameterSymbol Conditions min typ max Unit Average on-state current I T(AV)M Half sine wave, T c = 70°C 6100A RMS on-state current I T(RMS)9600A Peak non-repetitive surge currentI TSM 94×103ALimiting load integral I 2t tp = 10 ms, T vj = 125 °C,V D = V R = 0 V41.28×106A 2s Peak non-repetitive surge currentI TSM 100×103ALimiting load integralI 2ttp = 8.3 ms, T vj = 125 °C,V D = V R = 0 V43.37×106A 2s Characteristic valuesParameter Symbol Conditions mintypmaxUnit On-state voltage V T I T = 3000 A, T vj = 125 °C1.04V Threshold voltage V (T0)0.9V Slope resistance r T I T = 4000 A - 18000 A, T vj = 125 °C0.05m ΩHolding current I H T vj = 25 °C 100mA T vj = 125 °C 75mA Latching currentI LT vj = 25 °C 500mA T vj = 125 °C350mASwitchingMaximum rated values1)ParameterSymbol Conditions min typ maxUnit Critical rate of rise of on-state currentdi/dt crit Cont.f = 50 Hz 250A/µs Critical rate of rise of on-state currentdi/dt critT vj = 125 °C,I TRM = 3000 A,V D ≤ 0.67 V DRM ,I FG = 2 A, t r = 0.5 µsCont.f = 1Hz1000A/µs Circuit-commutated turn-off timet q T vj = 125°C, I TRM = 3000 A,V R = 200 V, di T /dt = -20 A/µs,V D ≤ 0.67⋅V DRM , dv D /dt = 20V/µs500µsCharacteristic valuesParameter Symbol Conditions min typ max Unit Recovery chargeQ rrT vj = 125°C, I TRM = 2000 A,V R = 200 V,di T /dt = -1.5 A/µs 3000µAsGate turn-on delay time t gd V D = 0.4⋅V RM , I FG = 2 A,t r = 0.5 µs, T vj = 25 °C3µsTriggeringMaximum rated values1)ParameterSymbol Conditions min typ max Unit Peak forward gate voltage V FGM 12V Peak forward gate current I FGM 10A Peak reverse gate voltage V RGM 10VAverage gate power lossP G(AV)see Fig. 9Characteristic valuesParameter Symbol Conditions mintypmax Unit Gate-trigger voltage V GT T vj = 25 °C 2.6V Gate-trigger current I GT T vj = 25 °C400mA Gate non-trigger voltage V GD V D = 0.4 x V DRM , T vj = 125 °C 0.3V Gate non-trigger currentI GDV D = 0.4 x V DRM , T vj = 125°C10mAThermalMaximum rated values1)Parameter Symbol Conditions min typ max Unit Operating junction temperature rangeT vj125°C Storage temperature range T stg -40140°C Characteristic valuesParameterSymbol Conditionsmintypmax Unit Thermal resistance junction to caseR th(j-c)Double-side cooled 5K/kW R th(j-c)A Anode-side cooled 10K/kW R th(j-c)CCathode-side cooled 10K/kW Thermal resistance case to heatsinkR th(c-h)Double-side cooled 1K/kW R th(c-h)Single-side cooled2K/kWAnalytical function for transient thermalimpedance:)e -(1R = (t)Z n1i t/-i c)-th(j i å=τi 1234R i (K/kW) 3.3590.9360.4810.224τi (s)0.40690.08540.01180.0030Fig. 1 Transient thermal impedance junction-to case.Fig. 2On-state characteristics.T j =125°C, 10ms half sineFig. 3Max. on-state voltage characteristicsFig. 4On-state power dissipation vs. mean on-statecurrent. Turn - on losses excluded.Fig. 5Max. permissible case temperature vs. meanon-state current.Fig. 6Surge on-state current vs. pulse length. Half-sine wave.Fig. 7Surge on-state current vs. number of pulses.Half-sine wave, 10 ms, 50Hz.Fig. 8Recommended gate current waveform.Fig. 9Max. peak gate power loss.Fig. 10Recovery charge vs. decay rate of on-statecurrent.Fig. 11Peak reverse recovery current vs. decay rateof on-state current.ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.ABB Switzerland Ltd Doc. No. 5SYA1070-01 Okt. 03Semiconductors Fabrikstrasse 3CH-5600 Lenzburg, Switzerland Telephone +41 (0)58 586 1419Fax +41 (0)58 586 1306Fig. 12Device Outline Drawing.。