1SS226 二极管- SOT-23

安徽富信半导体科技有限公司ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.1SS193/1SS181/1SS184/1SS226SOT-23Switching Diode 开关二极管▉Internal Configuration&DeviceMarking 内部结构与产品打标Type 型号1SS1931SS1811SS1841SS226Pin 管脚Mark 打标F3A3B3C3▉AbsoluteMaximum Ratings 最大额定值Characteristic 特性参数Symbol 符号Rat 额定值Unit 单位Peak Reverse V oltage 反向峰值电压V RRM 80V Reverse Work Voltage 反向工作电压V RWMDC Reverse Voltage 直流反向电压V R Forward Work Current 正向工作电流I F (I O )100mA Peak Forward Current 正向峰值电流I FM300mA Power dissipation 耗散功率P D (Ta=25℃)150mW Thermal Resistance J-A 结到环境热阻R θJA 833℃/WJunction and Storage Temperature 结温和储藏温度T J ,T stg-55to+150℃■Electrical Characteristics 电特性(T A =25℃unless otherwise noted 如无特殊说明，温度为25℃)Characteristic 特性参数Symbol 符号Min 最小值Max 最大值Unit 单位Reverse Breakdown Voltage 反向击穿电压(I R =100µA)V (BR)80—V Reverse Leakage Current(V R =30V)反向漏电流(V R =80V)I R —0.10.5µA Forward V oltage(I F =1mA)正向电压(I F =10mA)(I F =100mA)V F 0.610.740.92 1.2V Diode Capacitance 二极管电容(V R =0V,f=1MHz)C D—3pF Reverse Recovery Time 反向恢复时间T rr—4nSANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.1SS193/1SS181/1SS184/1SS226■Typical Characteristic Curve典型特性曲线ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.1SS193/1SS181/1SS184/1SS226■Dimension外形封装尺寸Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 0.900 1.1500.0350.045A10.0000.1000.0000.004A20.900 1.0500.0350.041b 0.3000.5000.0120.020c 0.0800.1500.0030.006D 2.800 3.0000.1100.118E 1.200 1.4000.0500.055E1 2.2502.5500.0890.100e 0.950TYP0.037TYPe1 1.8002.0000.0710.079L 0.550REF0.022REFL10.3000.5000.0120.020θ0o8o 0o8o。

vdrvdr过放电释放电压vdr29v30v可调整vdrv0101vdipvdip放电过流检测电压vdipvdd36vvdipmv3030负载短路检测电压vsipvdd30v055085115v充电器检测电压vcha03v延迟时间过充电检测延迟时间tocvdd39v?45v50100150ms过放电检测延迟时间todvdd36v?20v102540ms放电过流检测延迟时间tdipvdd36v51015ms负载短路检测延迟时间tsipvdd30v500700s控制端子输出电压od端子输出高电压vdhvdd01vdd002vod端子输出低电压vdl0105voc端子输出高电压vchvdd01vdd002voc端子输出低电压vcl0105v向0v电池充电的功能允许或禁止充电器起始电压允许允许向0v电池充电功v0ch12v向0v电池充电功能能电池电压禁止向0v禁止向0v电池充电功v0in05v电池充电功能能说明
© 2009-2015 HYCON Technology Corp
DS-HY2110-V16_SC page2
HY2110
1 节锂离子/锂聚合物电池保护 IC
注意： 1、 本说明书中的内容，随着产品的改进，有可能不经过预告而更改。请客户及时到本公司网站下载更 新 。 2、 本规格书中的图形、应用电路等，因第三方工业所有权引发的问题，本公司不承担其责任。 3、 本产品在单独应用的情况下，本公司保证它的性能、典型应用和功能符合说明书中的条件。当使用 在客户的产品或设备中，以上条件我们不作保证，建议客户做充分的评估和测试。 4、 请注意输入电压、输出电压、负载电流的使用条件，使 IC 内的功耗不超过封装的容许功耗。对于 客户在超出说明书中规定额定值使用产品，即使是瞬间的使用，由此所造成的损失，本公司不承担 任何责任。 5、 本产品虽内置防静电保护电路，但请不要施加超过保护电路性能的过大静电。 6、 本规格书中的产品，未经书面许可，不可使用在要求高可靠性的电路中。例如健康医疗器械、防灾 器械、车辆器械、车载器械及航空器械等对人体产生影响的器械或装置，不得作为其部件使用。 7、 本公司一直致力于提高产品的质量和可靠度，但所有的半导体产品都有一定的失效概率，这些失效 概率可能会导致一些人身事故、火灾事故等。当设计产品时，请充分留意冗余设计并采用安全指标， 这样可以避免事故的发生。 8、 本规格书中内容，未经本公司许可，严禁用于其它目的之转载或复制。

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERFeatures◆◆◆The plastic package carries Underwriters LaboratoryFlammability Classification 94V-0 For surface mounted applicationsMetal silicon junction,majority carrier conduction Low power loss,high efficiencyBuilt-in strain relief,ideal for automated placement High forward surge current capability High temperature soldering guaranteed:250 °C/10 seconds at terminalsMechanical DataCase : JEDEC DO-214AC/SMA molded plastic body Terminals : Solderable per MIL-STD-750,Method 2026 Polarity : Color band denotes cathode end Mounting Position : AnyWeight : 0.0018 ounce, 0.064 grams◆◆◆ Ratings at 25 C ambient temperature unless otherwise specified.Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.Maximum Ratings And Electrical Characteristics◆DO-214AC/SMADimensions in inches and (millimeters)ParameterSYMBOLSSS 22SS 23SS 24SS 25SS 26SS 28SS 210SS 2150SS 2200UNITS Marking CodeMDDSS 22MDD SS 23MDD SS 24MDD SS 25MDD SS 26MDD SS 28MDD SS 210MDD SS 2150MDD SS 2200Maximum repetitive peak reverse voltage V RMM 203040506080100150200V Maximum RMS voltageV RMS 14212835425670105140V Maximum DC blocking voltageV DC 203040506080100150200V Maximum average forward rectified current at TL(see fig.1)I (AV)2.0A Peak forward surge current 8.3ms single half sine-wavesuperimposed onrated load (JEDEC Method)I FSM 50AMaximum instantaneous forward voltage at 2.0AV F 0.550.700.850.95V Maximum DC reverse current T A =25℃at rated DCblocking voltageT A =125℃I R 0.50.3mA 5.03.0Typical junction capacitance (NOTE 1)C J 22080pF Typical thermal resistance (NOTE 2)R JA 80.0℃/W Operating junction temperature range T J -55 to +150℃Storage temperature range T STG-55to +150℃Note:1.Measured at 1.0MHz and applied reverse voltage of 4.0V D.C.2.P.C.B.mounted with 2.0x 2.0”(5.0x5.0c m) copperpad areas.3.The typical data above is for reference only.Typical Characterisitics10Fig.4 Typical Junction Capacitance0.1J u n c t i o n C a p a c i t a n c e (p F )Reverse Voltage (V)10100200500205010010.10.41.4Fig.3 Typical Forward CharacteristicI n s t a n e o u s F o r w a r d C u r r e n t (A )Instaneous Forward Voltage (V)1.0100.60.20.81.01.21.81.620Fig.1 Forward Current Derating Curve0.51.01.52.02.53.00.0255075100125150A v e r a g e F o r w a r dC u r r e n t (A )100110203000406050Fig.5 Maximum Non-Repetitive PeakForward Surge CurrentP e a k F o r w a r d S u r g e C u r r e nt (A )10Number of Cycles at 60HzFig.2 Typical Reverse CharacteristicsI n s t a n e o u s R e v e r s e C u r r e n t ( μA )20406080Percent of Rated Peak Reverse Voltage （%）1001001011021031040.01100110100Fig.6- Typical Transient Thermal ImpedanceT r a n s i e n t T h e r m a l I m p e d a n c e （°C /W ）t, Pulse Duration （sec ）0.1110Case Temperature (°C)Packing informationImportant Notice and DisclaimerMicrodiode Electronics (Jiangsu) reserves the right to make changes to this document and its products and specifications at any time without notice. Customers should obtain and confirm the latest product information and specifications before final design,purchase or use.Microdiode Electronics (Jiangsu) makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, not does Microdiode Electronics (Jiangsu) assume any liability for application assistance or customer product design. Microdiode Electronics (Jiangsu) does not warrant or accept any liability with products which are purchased or used for any unintended or unauthorized application.No license is granted by implication or otherwise under any intellectual property rights of Microdiode Electronics (Jiangsu).Microdiode Electronics (Jiangsu) products are not authorized for use as critical components in life support devices or systems without express written approval of Microdiode Electronics (Jiangsu).Suggested P adLayoutstandar RS-481-A and specifications listed above.Reel packingSymbol Unit (mm)Unit (inch)A 1.680.066B 1.520.060C 3.900.154D 2.410.095E5.450.215SMA 7"2,0004.04,000183*155*183178382*356*392160,00016.0PACKAGEREEL SIZEREEL COMPONENT SPACING BOX INNER BOX REEL DIA,CARTON SIZE CARTON APPROX.GROSS WEIGHT(kg)(pcs)(m/m)(m/m)(m/m)(pcs)(m/m)(pcs)SMA 11"5,000 4.010,000290*290*38330310*310*36080,00011.0SMA13"7,5004.015,000335*335*38330350*330*360120,00014.5unit:mmItemSymbol Tolerance SMA Carrier width A 0.1 2.80Carrier length B 0.1 5.33Carrier depth C 0.1 2.36Sprocket holed 0.05 1.5013"Reel outside diameter D 2.0330.0013"Reel inner diameter D 1min 50.007"Reel outside diameter D 2.0178.007"Reel inner diameter D 1min 62.00Feed hole diameter D 20.513.00Sprocket hole position E 0.1 1.75Punch hole position F 0.1 5.50Punch hole pitch P 0.1 4.00Sprocket hole pitch P 00.1 4.00Embossment center P 10.1 2.00Overall tape thickness T 0.10.28Tape width W 0.312.00Reel widthW 11.018.00。

0.4 V
*1. 延迟时间的组合项目中的（1）~（9），请参阅表2。
备注 需要上述检测电压值以外的产品时，请向本公司营业部咨询。
过电流1 检测电压
[VIOV1] 0.16 V 0.08 V 0.15 V 0.08 V 0.20 V 0.10 V 0.13 V 0.10 V 0.10 V 0.15 V 0.08 V 0.10 V 0.10 V 0.10 V 0.20 V 0.13 V 0.13 V 0.20 V 0.08 V 0.15 V 0.05 V 0.10 V 0.06 V 0.15 V 0.15 V 0.18 V 0.08 V 0.10 V 0.15 V 0.13 V 0.12 V 0.25 V 0.10 V 0.10 V 0.15 V 0.10 V 0.13 V 0.06 V
0V
S-8261AATMD-G2TT2G 4.300 V 0.10 V 2.30 V
0V
S-8261AAUMD-G2UT2G 4.275 V 0.10 V 2.30 V
0.1 V
S-8261AAXMD-G2XT2G 4.350 V 0.10 V 2.30 V
0.1 V
S-8261AAZMD-G2ZT2G 4.280 V 0.25 V 2.50 V
5
1节电池用电池保护IC S-8261系列 ■ 引脚排列图
SOT-23-6 Top view 65 4
1 23 图2
引脚号
1 2 3 4 5 6
Rev.4.5_00
符号 DO VM CO DP VDD VSS
表4
描述 放电控制用FET门极连接端子(CMOS输出) VM ~ VSS间的电压检测端子(过电流检测端子) 充电控制用FET门极连接端子(CMOS输出) 延迟时间测定用测试端子 正电源输入端子 负电源输入端子