mrf5p20180hr6 pdf

RF Power Field Effect TransistorN-Channel Enhancement-Mode Lateral MOSFETDesigned for W-CDMA base station applications with frequencies from 1930to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.To be used in Class AB for PCN-PCS/cellular radio and WLL applications.•Typical 2-Carrier W-CDMA Performance: V DD = 28 Volts, I DQ = 1600 mA,P out = 38Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.Power Gain — 14 dBDrain Efficiency — 26%IM3 @ 10 MHz Offset — -37.5 dBc in 3.84 MHz Channel BandwidthACPR @ 5 MHz Offset — -41 dBc in 3.84 MHz Channel Bandwidth•Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 120 Watts CWOutput PowerFeatures•Characterized with Series Equivalent Large-Signal Impedance Parameters•Internally Matched for Ease of Use•Qualified Up to a Maximum of 32 V DD Operation•Integrated ESD Protection•Lower Thermal Resistance Package•Low Gold Plating Thickness on Leads, 40μ″ Nominal.•RoHS Compliant•In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.Table 1. Maximum RatingsRating Symbol Value Unit Drain-Source Voltage V DSS-0.5, +65Vdc Gate-Source Voltage V GS-0.5, +15Vdc Total Device Dissipation @ T C= 25°CDerate above 25°CP D5303.0WW/°C Storage Temperature Range T stg-65 to +150°C Case Operating Temperature T C150°C Operating Junction Temperature T J200°C CW Operation @ T C= 25°CDerate above 25°CCW1851.2WW/°C Table 2. Thermal CharacteristicsCharacteristic Symbol Value (1,2)Unit Thermal Resistance, Junction to CaseCase Temperature 77°C, 120 W CWCase Temperature 72°C, 38 W CWRθJC0.330.35°C/W1.MTTF calculator available at /rf. Select Tools/Software/Application Software/Calculators to accessthe MTTF calculators by product.2.Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to /rf.Select Documentation/Application Notes - AN1955.Document Number: MRF5P20180HR6Rev. 1, 5/2006 Freescale SemiconductorTechnical Data2RF Device DataFreescale SemiconductorMRF5P20180HR6Table 3. ESD Protection CharacteristicsTest ConditionsClass Human Body Model 2 (Minimum)Machine Model M3 (Minimum)Charge Device ModelC7 (Minimum)Table 4. Electrical Characteristics (T C = 25°C unless otherwise noted)CharacteristicSymbolMinTypMaxUnitOff Characteristics (1)Zero Gate Voltage Drain Leakage Current (V DS = 65 Vdc, V GS = 0 Vdc)I DSS ——10μAdc Zero Gate Voltage Drain Leakage Current (V DS = 28 Vdc, V GS = 0)I DSS ——1μAdc Gate-Source Leakage Current (V GS = 5 Vdc, V DS = 0 Vdc)I GSS——1μAdcOn CharacteristicsGate Threshold Voltage (1)(V DS = 10 Vdc, I D = 200 μAdc)V GS(th) 2.5 2.7 3.5Vdc Gate Quiescent Voltage (3)(V DS = 28 Vdc, I D = 1600 mAdc)V GS(Q)— 3.6—Vdc Drain-Source On-Voltage (1)(V GS = 10 Vdc, I D = 2 Adc)V DS(on)—0.260.3Vdc Forward Transconductance (1)(V DS = 10 Vdc, I D = 2 Adc)g fs—5—SDynamic Characteristics (1,2)Reverse Transfer Capacitance(V DS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V GS = 0 Vdc)C rss—1.7—pFFunctional Tests (3) (In Freescale Test Fixture, 50 ohm system) V DD = 28 Vdc, I DQ = 1600 mA, P out = 38 W Avg.,f1 = 1932.5 MHz, f2 = 1942.5 MHz and f1 = 1977.5 MHz, f2 = 1987.5 MHz, 2-Carrier W-CDMA, 3.84 MHz Channel Bandwidth Carriers.ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF.Power Gain G ps 12.514—dB Drain EfficiencyηD 2326—%Intermodulation Distortion IM3—-37.5-35dBc Adjacent Channel Power Ratio ACPR —-41-38dBc Input Return LossIRL—-16-9dB1.Each side of device measured separately.2.Part internally matched both on input and output.3.Measurement made with device in push-pull configuration.MRF5P20180HR63RF Device DataFreescale SemiconductorZ11, Z120.341″ x 0.945″Microstrip Z13, Z140.035″ x 0.913″Microstrip Z15, Z160.581″ x 0.823″Microstrip Z17, Z180.059″ x 1.057″Microstrip Z19, Z200.081″ x 0.046″Microstrip Z21, Z220.081″ x 0.126″Microstrip Z250.081″ x 0.793″MicrostripPCBTaconic TLX8-0300, 0.030″, εr = 2.55Figure 1. MRF5P20180HR6 Test Circuit SchematicZ10.081″ x 1.126″Microstrip Z20.079″ x 0.138″Microstrip Z30.081″ x 0.091″Microstrip Z40.081″ x 0.117″Microstrip Z5, Z240.134″ x 0.874″Microstrip Z6, Z230.081″ x 2.269″Microstrip Z7, Z80.081″ x 0.118″Microstrip Z9, Z100.081″ x 0.079″MicrostripRF INPUTV SUPPLYV SUPPLYRF Table 5. MRF5P20180HR6 Test Circuit Component Designations and ValuesPartDescriptionPart Number Manufacturer C11.8 pF 100B Chip Capacitor 100B1R8BW ATC C2, C3, C4, C5, C6, C710 pF 100B Chip Capacitors 100B100GW ATC C8, C96.8 pF 100B Chip Capacitors 100B6R8CW ATC C10, C11, C12, C1310 nF 200B Chip Capacitors 200B103MW ATC C14, C15, C16, C17, C18, C1922 μF, 35 V Tantalum Capacitors TAJE226M035AVX C20, C21220 μF, 63 V Electrolytic Capacitors 13668221PhilipsR1, R2, R3, R410 k W Chip Resistors (1206)4RF Device Data Freescale SemiconductorMRF5P20180HR6Figure 2. MRF5P20180HR6 Test Circuit Component LayoutFreescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product.MRF5P20180HR65RF Device DataFreescale SemiconductorTYPICAL CHARACTERISTICS20805151840−4540f, FREQUENCY (MHz)Figure 3. 2-Carrier W-CDMA Broadband Performance@ P out = 38 Watts Avg.G p s , P O W E R G A I N (d B )−35−10−15−20−25I N P U T R E T U R N L O S S (d B )I R L ,I M 3 (d B c ), A C P R (d B c )−30143513301225112010−209−258−307−356−40186018801900192019401960198020002020204020601116G p s , P O W E R G A I N (d B )15.51514.51413.51312.51211.5100−60−200.1TWO−TONE SPACING (MHz)Figure 6. Intermodulation Distortion Productsversus Tone Spacing I N T E R M O D U L A T I O N D I S T O R T I O N (d B c )I M D ,−25−30−35−40−45−50−551104630P in , INPUT POWER (dBm)Figure 7. Pulse CW Output Power versusInput Power44424038363432ηD , D R A I N E F F I C I E N C Y (%)6RF Device DataFreescale SemiconductorMRF5P20180HR6TYPICAL CHARACTERISTICS1000351−55−2030−2525−3020−3515−4010−455−5010P out , OUTPUT POWER (WATTS, Avg.) W−CDMAFigure 8. 2-Carrier W-CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output PowerI M 3 (d B c ),A C P R (d B c )T J , JUNCTION TEMPERATURE (°C)Figure 9. MTTF Factor versus Junction TemperatureThis above graph displays calculated MTTF in hours x ampere 2drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTTF factor by I D 2 for MTTF in a particular application.2201001201401601802001071010109108100.00011000PEAK−TO−AVERAGE (dB)Figure 10. CCDF W-CDMA 3GPP , Test Model 1, 64 DPCH, 67% Clipping, Single Carrier Test SignalP R O B A B I L I T Y (%)1010.10.010.0012468Figure 11. 2-Carrier W-CDMA Spectrumf, FREQUENCY (MHz)−80−60(d B )−4020515100−5−10−15−20−2525W-CDMA TEST SIGNALM T T F F A C T O R (H O U R S x A M P S 2)ηD , D R A I N E F F I C I E N C Y (%), G p s , P O W E R G A I N (d B )MRF5P20180HR67RF Device DataFreescale SemiconductorZ o = 25 ΩZ loadf = 1990 MHzf = 1930 MHzZ sourcef = 1990 MHzf = 1930 MHzFigure 12. Series Equivalent Source and Load Impedancef MHz Z sourceΩZ load Ω1930196019906.54 - j16.0413.88 - j20.469.70 - j17.92 4.06 - j5.563.70 - j5.483.64 - j5.76Z source =Test circuit impedance as measured fromgate to gate, balanced configuration.Z load=Test circuit impedance as measuredfrom drain to drain, balanced configuration.V DD = 28 V, I DQ = 1600 mA, P out = 38 W Avg.Z sourceZloadOutput Matching Network8RF Device Data Freescale SemiconductorMRF5P20180HR6NOTESMRF5P20180HR69RF Device DataFreescale SemiconductorNOTES10RF Device Data Freescale SemiconductorMRF5P20180HR6NOTESMRF5P20180HR611RF Device DataFreescale SemiconductorPACKAGE DIMENSIONSCASE 375D-05ISSUE E NI-12303.GATE4.GATE5.SOURCEMAMbbbBMTInformation in this document is provided solely to enable system and softwareimplementers to use Freescale Semiconductor products. There are no express orimplied copyright licenses granted hereunder to design or fabricate any integratedcircuits or integrated circuits based on the information in this document.Freescale Semiconductor reserves the right to make changes without further notice toany products herein. Freescale Semiconductor makes no warranty, representation orguarantee regarding the suitability of its products for any particular purpose, nor doesFreescale Semiconductor assume any liability arising out of the application or use ofany product or circuit, and specifically disclaims any and all liability, including withoutlimitation consequential or incidental damages. “Typical” parameters that may beprovided in Freescale Semiconductor data sheets and/or specifications can and dovary in different applications and actual performance may vary over time. All operatingparameters, including “Typicals”, must be validated for each customer application bycustomer’s technical experts. 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