Scaling Behaviors of Graphene Nanoribbon FETs A Three Dimensional Quantum Simulation Study
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BRIEF COMMUNICATIONRheological behaviour of ethylene glycol-titanate nanotube nanofluidsHaisheng Chen ÆYulong Ding ÆAlexei Lapkin ÆXiaolei FanReceived:11July 2008/Accepted:4February 2009/Published online:26February 2009ÓSpringer Science+Business Media B.V.2009Abstract Experimental work has been performed on the rheological behaviour of ethylene glycol based nanofluids containing titanate nanotubes over 20–60°C and a particle mass concentration of 0–8%.It is found that the nanofluids show shear-thinning behaviour particularly at particle concentrations in excess of *2%.Temperature imposes a very strong effect on the rheological behaviour of the nanofluids with higher temperatures giving stronger shear thinning.For a given particle concentration,there exists a certain shear rate below which the viscosity increases with increasing temperature,whereas the reverse occurs above such a shear rate.The normalised high-shear viscosity with respect to the base liquid viscosity,however,is independent of temperature.Further analyses suggest that the temperature effects are due to the shear-dependence of the relative contributions to the viscosity of the Brownian diffusion and convection.The analyses also suggest that a combination of particle aggregation and particle shape effects is the mechanism for the observed high-shear rheological behaviour,which is also supported by the thermal conductivity measure-ments and analyses.Keywords Rheological behaviour ÁEthylene glycol ÁTitanate nanotube ÁNanofluid ÁThermal conductivityNanofluids are dilute suspensions of particles with at least one dimension smaller than about 100nm (Choi 1995).Such a type of materials can be regarded as functionalized colloids with special requirements of a low-particle loading,a high-thermal performance,favourable flow/rheolgocial behaviour,and a great physical and chemical stability over a wide range of process and solution chemistry conditions.Nano-fluids have been shown to be able to enhance heat transfer (Choi 1995;Wang and Mujumdar.2007),mass transfer (Krishnamurthy et al.2006),and wetting and spreading (Wasan and Nikolov 2003),and have been a hot topic of research over the past decade (Wang and Mujumdar 2007;Keblinski et al.2005).Most published studies have focused on the heat transfer behaviour including thermal conduction (Choi 1995;Wang et al.1999;Wang and Mujumdar 2007;Keblinski et al.2005;Eastman et al.2001;He et al.2007;Ding et al.2006),phase change (boiling)heat transfer (Das et al.2003;Pak and Cho 1998),and convective heat transfer (Wang and Mujumdar 2007;Keblinski et al.2005;He et al.2007;Ding et al.2006,Chen et al.2008;Prasher et al.2006a and Yang et al.2005).Only few studies have been devoted to the rheological behaviour ofH.Chen ÁY.Ding (&)Institute of Particle Science and Engineering,University of Leeds,Leeds,UK e-mail:y.ding@pkin ÁX.FanDepartment of Chemical Engineering,University of Bath,Bath,UKJ Nanopart Res (2009)11:1513–1520DOI 10.1007/s11051-009-9599-9nanofluids(He et al.2007;Chen et al.2008;Prasher et al.2006a,b;Kwak and Kim2005;Lee et al.2006), although there is a large body of literature on suspensions rheology;see for example,Russel et al. (1991);Chow(1993);Petrie(1999),Larson(1999); Goodwin et al.(2000)l;Mohraz et al.(2004);Larson (2005);Egres and Wagner(2005);Abdulagatov and Azizov(2006).Particularly,there is little in the literature on the effect of temperature on the rheo-logical behaviour of nanofluids.Clearly,there is a gap in the current rheological literature for this type offluids.Furthermore,recent work has shown that the thermal behaviour of nanofluids correlates well with their rheological behaviour(Prasher et al.2006a, b;Chen et al.2007a;Abdulagatov and Azizov2006). In a recent study,we investigated systemically the rheological behaviour of ethylene glycol(EG)based spherical TiO2nanofluids(Chen et al.2007b).The results show that the nanofluids are Newtonian over a shear rate range of0.5–104s-1and the shear viscosity is a strong function of temperature,particle concentration and aggregation microstructure.This work is concerned about the rheological behaviour of EG based nanofluids containing titanate nanotubes (TNT).The specific objectives of the work are to investigate the effects of particle shape,particle concentration and temperature on nanofluids viscosity, and to understand the relationship between the rheo-logical behaviour and the effective thermal conductivity of nanofluids.It is for thefirst time that the rheological behaviour of a highly viscous EG based TNT nanofluids is investigated in a systematic manner.As will be seen later,the results of this work provide further evidence that the rheological measure-ments could provide information of particle structuring for predicting the effective thermal conductivity of nanofluids.The EG-TNT nanofluids used in this work were formulated by using the so-called two-step method with EG purchased from Alfa Aesar and TNT synthesized in our labs using a method described elsewhere(Bavykin et al.2004).The details of nanofluids formulation can be found elsewhere(Wen and Ding2005;He et al.2007;Chen et al.2007b). The TNT particles have a diameter(b)of*10nm and a length(L)of*100nm,giving an aspect ratio of(r=L/b)of*10.To avoid complications in interpreting the experimental results,no dispersants/ surfactants were used in the formulation.The nanofluids formulated were found stable for over 2months.The rheological behaviour of the nano-fluids was measured by using a Bolin CVO rheometer (Malvern Instruments,UK)over a shear rate range of 0.03–3,000s-1,a nanoparticle mass concentration of w=0–8%,and a temperature range of20–60°C (293–333K).The nanofluids were characterised for their size by using a Malvern Nanosizer(Malvern Instruments,UK)and a scanning electron microscope (SEM).The average effective particle diameter was found to be*260nm for all nanofluids formulated. This size is much larger than the equivalent diameter of the primary nanoparticles due to aggregation;see later for more discussion.Note that the particle size characterisation was performed both before and after the rheological measurements and no detectable changes to particle size were found.Figure1shows the viscosity of pure EG and EG-TNT nanofluids as a function of shear rate at 40°C.The results at other temperatures are similar.It can be seen that the EG-TNT nanofluids exhibit highly shear-thinning behaviour particularly when the TNT concentration exceeds*2%.Such behaviour is different from the observed Newtonian behaviour of EG-TiO2nanofluids containing spherical nanoparti-cles over similar shear rate range(Chen et al.2007b) where the base liquid,EG,is the same as that used in the current wok.The behaviour is similar to the observations of carbon nanotube nanofluids(Ding et al.2006)and CuO nanorod nanofluids(Kwak and Kim2005),although there are important differencesbetween them such as temperature dependence as will be discussed later.The shear-thinning behaviour of well-dispersed suspensions can be interpreted by the structuring of interacting particles(Doi and Edwards1978a,b and Larson1999).In a quiescent state,a rod-like particle has three types of motion due to Brownian diffusion: rotational(end-over-end)motion around the mid-point and translational motion in parallel or perpendicular to the long axis.For dilute suspensions with a number density,c,ranging between0and1/L3or volume fraction,u,ranging between0and1/r2),the average spacing between the particles is larger than the longest dimension of the rod,and zero shear viscosity can be approximated by gð0Þ%g0ð1þAÁcL3Þwith g0the base liquid viscosity and A,a numerical constant(Doi and Edwards1978a).For suspensions with 1/L3\c\1/bL2or1/r2\f/\1/r,the rod-like particles start to interact.The rotational motion is severely restricted,as well as the translational motion perpendicular to the long axis,and the zero shear viscosity can be estimated by gð0Þ%g0ð1þðBcL3Þ3Þ; with B a numerical constant(Doi and Edwards1978b). As a consequence,the zero shear viscosity can be much greater than the base liquid viscosity.The large viscosity is due to the rod-like shape effect and the viscosity is very sensitive to shear,which tends to align particles and hence the shear-thinning behaviour as shown in Fig.1.Note that the above mechanism can give a qualitative explanation for the experimental observations at low-shear rates and the shear-thinning behaviour as shown in Fig.1,it does not explain the high-shear viscosity of the nanofluids,which will be discussed later.It should also be noted that the criteria for classifying nanofluids given above need to be modified due to the presence of aggregates;see later for more discussion.Figure2shows the shear viscosity of4.0%EG-TNT nanofluids as a function of shear rate at different temperatures.The results under other concentrations are similar.It can be seen that the temperature has a very strong effect on the rheological behaviour of nanofluids with higher temperatures giving stronger shear thinning.For shear rates below*10s-1,the shear viscosity increases with increasing temperature, whereas the trend is reversed when the shear rate is above*10s-1.As mentioned above,this behaviour was not observed for carbon nanotube(Ding et al. 2006)and CuO nanorod(Kwak and Kim2005)nanofluids and we have not seen reports on such behaviour for nanofluids in the literature;see later for more discussion on the underlying mechanisms. Figure2also shows that the strongest shear thinning occurs at40–60°C,whereas very weak-shear thinning takes places at20–30°C.It is also noted that the shear viscosity of nanofluids at all temperatures investigated approaches a constant at high-shear rates.If the high-shear viscosity is plotted against temperature,Fig.3is obtained where the shear rate corresponding to the high-shear viscosity is taken as *2,000s-1.An inspection of all the data indicates that theyfit the following equation very well:ln g¼AþBÂ1000=TþCðÞð1Þwhere g is the shear viscosity(mPaÁs),T is the absolute temperature(K),and A,B and C areconstants given in Table1.Equation(1)takes a similar format as that widely used for liquid viscosity (Bird et al.2002)and for EG based nanofluids containing spherical particles(Chen et al.2007b).If the measured high-shear viscosity is normalized with respect to the shear viscosity of the base liquid, the relative increaseðg i¼ðgÀg0Þ=g0Þof the high-shear viscosity is found to be only a function of concentration but independent of temperature over the temperature range investigated in this work.The relative increments in the shear viscosities of nano-fluids containing0.5%,1.0%,2.0%,4.0%and8.0% particles are 3.30%,7.00%,16.22%,26.34%and 70.96%,respectively.Similar temperature indepen-dence of the shear viscosity was also observed for EG-TiO2and water-TiO2nanofluids containing spherical nanoparticles(Chen et al.2007b).The experimentally observed temperature depen-dence can be interpreted as follows.Given the base liquid and nanoparticles,the functional dependence of viscosity on shear rate is determined by the relative importance of the Brownian diffusion and convection effects.At temperatures below*30°C,the contribu-tion from the Brownian diffusion is weak due to high-base liquid viscosity.As a consequence,the shear dependence of the suspension is weak(Fig.2).The contribution from the Brownian diffusion becomes increasingly important with increasing temperature particularly above40°C due to the exponential dependence of the base liquid viscosity on temperature (Fig.3).At very high-shear rates,the Brownian diffusion plays a negligible role in comparison with the convective contribution and hence independent of the high-shear viscosity on the temperature.We now start to examine if the classical theories for the high-shear viscosity predict the experimental measurements(note that there is a lack of adequate theories for predicting the low shear viscosity).Figure4shows the shear viscosity increment as a function of nanoparticle volume concentration together with the predictions by the following Brenner &Condiff Equation for dilute suspensions containing large aspect ratio rod-like particles(Brenner and Condiff1974):g¼g01þg½ uþO u2ÀÁÀÁð2Þwhere the intrinsic viscosity,½g ;for high-shear rates has the following form(Goodwin and Hughes2000):½g ¼0:312rln2rÀ1:5þ2À0:5ln2rÀ1:5À1:872rð3ÞAlso included in Fig.4are the data for EG-TiO2 nanofluids with spherical nanoparticles(Chen et al. 2007b)and predictions by the Einstein Equation (Einstein1906,1911)for dilute non-interacting suspensions of spherical particles,g¼g01þ2:5uðÞ: It can be seen that both the Einstein and Brenner& Condiff equations greatly underpredict the measured data for the EG-TNT nanofluids.The high-shear viscosity of EG-TNT nanofluids is much higher than that of the EG-TiO2nanofluids containing spherical nanoparticles,indicating a strong particle shape effect on the shear viscosity of nanofluids.Although the shear-thinning behaviour of the nanofluids could be partially attributed to the structuring of interacting rod-like particles,the large deviation between the measured high-shear viscosity and the predicted ones by the Brenner&Condiff equation cannot fully be interpreted.In the following,an attempt is made to explain the experimental observations from the viewpoint of aggregation of nanaoparticles,which have been shown to play a key role in thermal behaviour of nanofluids in recent studies(Wang et al. 2003;Xuan et al.2003;Nan et al.1997;Prasher et al. 2006a,b;Keblinski et al.2005).Such an approach is also supported by the SEM and dynamic lightTable1Empirical constants for Eq.(1)a Maximum discrepancies;b Minimum discrepancies Concentration(wt%)A B C MaxD a(%)MinD b(%)0.0-3.21140.86973-154.570.62-1.440.5-3.42790.94425-148.490.93-0.471.0-2.94780.81435-159.14 1.11-0.692.0-2.2930.65293-174.57 1.64-0.694.0-2.63750.7574-165.820.99-0.948.0-2.73140.93156-145.010.88-1.57scattering analyses,which,as mentioned before, show clear evidence of particle aggregation.According to the modified Krieger-Dougherty equation(Goodwin and Hughes2000;Wang et al. 2003;Xuan et al.2003;Nan et al.1997),the relative viscosity of nanofluids,g r,is given as:g r¼1Àu a=u mðÞÀ½g u mð4Þwhere u m is the maximum concentration at which the flow can occur and u a is the effective volume fraction of aggregates given by u a¼u=u ma with u ma the maximum packing fraction of aggregates.As aggre-gates do not have constant packing throughout the structure,the packing density is assumed to change with radial position according to the power law with a constant index(D).As a result,u a is given as u a¼uða a=aÞ3ÀD;with a a and a,the effective radii of aggregates and primary nanoparticles,respectively. The term D is also referred as the fractal index meaning the extent of changes in the packing fraction from the centre to the edge of the aggregates.Typical values of D are given in normal textbook as D= 1.8–2.5for diffusion limited aggregation(DLA)and D=2.0–2.2for reaction limited aggregation(RLA); see for example Goodwin and Hughes(2000).For nanofluids containing spherical nanoparticles,the value of D has been shown experimentally and numerically to be between1.6and1.8(Wang et al. 2003,Xuan et al.2003)and between1.8and2.3, respectively(Waite et al.2001).A typical value of 1.8is suggested for nanofluids made of spherical nanoparticles(Prasher et al.2006a,b).However,little research has been found on the fractal index for nanofluids containing rod-like nanoparticles.The colloid science literature suggests a fractal index of 1.5–2.45for colloidal suspensions depending on the type of aggregation,chemistry environment,particle size and shape and shearflow conditions(Haas et al. 1993;Mohraz et al.2004;Hobbie and Fry2006; Micali et al.2006;Lin et al.2007).In a recent study, Mohraz et al.(2004)investigated the effect of monomer geometry on the fractal structure of colloi-dal rod aggregates.They found that the fractal index is a non-linear function of the monomer aspect ratio with the D increasing from*1.80to*2.3when the aspect ratio of the rod-like nanoparticles increases from1.0to30.6.Based on the above,a value of D=2.1is taken for nanofluids used in this work (Mohraz et al.2004,Lin et al.2007).Although the fractal model may appear to simplify the complexity of microstructures in aggregating systems containing rod-like particles,excellent agreement between the model prediction and experimental measurements exists when a a/a=9.46;see Fig.4.Here the aggregates are assumed to formflow units of an ellipsoidal shape with an effective aspect ratio of r a¼L a=b a;where L a and b a are the effective length and diameter,respectively.In the calculation,a typical value of u m of0.3is taken(Barnes et al.1989),and the intrinsic viscosity[g]is calculated by Eq.(3).It is to be noted that the aggregate size thatfits well to the rheological data(Fig.4)is consistent with the particle size analyses using both the SEM and the Malvern Nanosizer.A comparison between the EG-TNT data (a a/a=9.46,D=2.1,u m=0.30)and the EG-TiO2 data(a a/a=3.34,D=1.8,u m=0.605)(Chen et al. 2007b)in Fig.4suggests that the larger aggregate size in TNT nanofluids be an important factor responsible for the stronger shear-thinning behaviour and higher shear viscosity of TNT nanofluids.An inspection of Eq.(4)indicates that the effec-tive volume fraction u a u a¼u a a=aðÞ3ÀDis much higher than the actual volume fraction(u).This leads to the experimentally observed high-shear viscosity even for very dilute nanofluids,according to the classification discussed before.As a consequence,the demarcations defining the dilute and semi-concen-trated dispersions should be changed by using the effective volume fraction.The model discussed above can also provide a macroscopic explanation for the temperature indepen-dence of the high-shear viscosity.From Eq.(4),one can see that the relative high-shear viscosity depends on three parameters,the maximum volume fraction, u m,the effective volume fraction,u a and the intrinsic viscosity,[g].For a given nanofluid at a temperature not far from the ambient temperature,the three parameters are independent of temperature and hence the little temperature dependence of the relative shear viscosity.Microscopically,as explained before,the temperature-independent behaviour is due to negligi-ble Brownian diffusion compared with convection in high-shearflows.To further illustrate if the proposed aggregation mechanism is adequate,it is used to predict the effective thermal conductivity of the nanofluids by using the following conventional Hamilton–Crosser model(H–C model)(Hamilton and Crosser1962):k=k0¼k pþðnÀ1Þk0ÀðnÀ1Þuðk0Àk pÞk pþðnÀ1Þk0þuðk0Àk pÞð5Þwhere k and k0are,respectively,the thermal conductivities of nanofluids and base liquid,n is the shape factor given by n=3/w with w the surface area based sphericity.For TNT used in this work,the sphericity w is estimated as0.6(Hamilton and Crosser1962).For suspensions of aggregates,the above equation takes the following form:k=k0¼k aþðnÀ1Þk0ÀðnÀ1Þu aðk0Àk aÞa0a0að6Þwhere k a is the thermal conductivity of aggregates.To calculate k a,Eq.(6)is combined with the following Nan’s model(Nan et al.2003)for randomly dispersed nanotube-based composites:k a=k0¼3þu in½2b xð1ÀL xÞþb zð1ÀL zÞ3Àu in½2b x L xþb z L zð7Þwhere/in is the solid volume fraction of aggregates, b x¼ðk xÀk0Þ=½k mþL xðk tÀk mÞ and b z¼ðk zÀk0Þ=½k mþL zðk tÀk mÞ with k x,k m and k t being the thermal conductivities of nanotubes along trans-verse and longitudinal directions and isotropic thermal conductivity of the nanotube,respectively. In this work,k x,k m and k t are taken the same value as k p for afirst order of approximation due to lack of experimental data,and L x and L z are geometrical factors dependent on the nanotube aspect ratio given by L x¼0:5r2=ðr2À1ÞÀ0:5r coshÀ1r=ðr2À1Þ3=2 and L z¼1À2L x:Figure5shows the experimental results together with predictions by the original H–C model(Eq.5) and revised H–C model(Eq.6).Here the experiment data were obtained using a KD2thermal property meter(Labcell,UK)(Murshed et al.2005;Chen et al. 2008).One can see that the measured thermal conductivity is much higher than the prediction by the conventional H–C model(Eq.5),whereas the modified H–C model taking into account the effect of aggregation(Eq.6)agrees very well with the exper-imental data.The above results suggest that nanoparticle aggregates play a key role in the enhancement of thermal conductivity of nanofluids. The results also suggest that one could use the rheology data,which contain information of particle structuring in suspensions,for the effective thermal conductivity prediction.In summary,we have shown that EG-TNT nano-fluids are non-Newtonian exhibiting shear-thinning behaviour over20–60°C and a particle mass concen-tration range of0–8%,in contrast to the Newtonian behaviour for EG-TiO2nanofluids containing spher-ical particles.The non-Newtonian shear-thinning behaviour becomes stronger at higher temperatures or higher concentrations.For a given particle concen-tration,there exists a certain shear rate(e.g.*10s-1 for4wt%)below which the viscosity increases with increasing temperature,whereas the reverse occurs above such a shear rate.The normalised high-shearviscosity with respect to the base liquid viscosity, however,is found to be independent of temperature. These observations have not been reported in the literature for nanofluids.Further analyses suggest that the temperature effects are due to the shear-depen-dence of the relative contributions to the viscosity of the Brownian diffusion and convection.The analyses also suggest that a combination of particle aggregation and particle shape effects is the mechanism for the observed high-shear rheological behaviour,which is supported not only by the particle size measurements but also by the thermal conductivity measurements and analyses using a combination of the H–C and Nan’s models.The results of this work also indicate that one could use the information of aggregation from the rheological experiments for predicting the effec-tive thermal conductivity of nanofluids. 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FAPα靶向标记化合物131I-FAPI-03的合成及初步体内外实验研究马 欢1,2, 廖家莉2, 杨远友2, 刘 宁2, 李飞泽2(1. 四川省医学科学院 四川省人民医院(电子科技大学附属医院) 核医学科,成都 610072;2. 四川大学 原子核科学技术研究所,辐射物理及技术教育部重点实验室,成都 610064)摘要:本研究以4-喹啉基-甘氨基-2-氰基吡咯烷为骨架,对连接基团进行碳链延长及羟基修饰成功合成FAPI 衍生物ATE-FAPI-03;通过亲电取代反应实现其131I 标记,并对标记化合物131I-FAPI-03的脂水分配比、体外稳定性等进行分析;开展细胞结合、内吞、流出等实验以评价131I-FAPI-03的体外动力学特征;并考察了131I-FAPI-03在荷胶质瘤小鼠体内的分布情况。
结果表明:131I-FAPI-03为亲脂性小分子,并具有良好的体外稳定性;与FAPα阳性细胞U87MG 孵育10 min 时的结合率为(22.00 ± 0.35)%,且随着孵育时间的延长结合率有明显的上升趋势,而与FAPα阴性细胞MCF-7的结合率始终处于较低水平;通过竞争结合实验测得131I-FAPI-03的IC 50值为45.5 nM ,表明其对FAPα具有较高的亲和力;大部分与U87MG 细胞结合的131I-FAPI-03可被细胞内吞,但其在细胞中的滞留能力偏低。
131I-FAPI-03在荷胶质瘤小鼠体内具有快速的肿瘤靶向能力:经尾静脉注射5 min 后,肿瘤组织对131I-FAPI-03的放射性摄取值为(14.90 ±3.21)% ID/g ,注射2 h 后,肿瘤/肌肉的放射性摄取比值达到(43.7 ± 16.7)。
上述结果为新型FAPα靶向药物的研发提供了重要的参考。
关键词:FAPα;131I ;FAPI ;胶质瘤中图分类号:TL92+3 文献标志码:A 文章编号:1000-7512(2024)02-0097-09doi :10.7538/tws.2024.37.02.0097Synthesis and Preliminary Evaluation of FAPα Targeted Tracer 131I-FAPI-03MA Huan 1,2, LIAO Jiali 2, YANG Yuanyou 2, LIU Ning 2, LI Feize2(1. Department of Nuclear Medicine , Sichuan Provincial People’s Hospital ,University of Electronic Science and Technology of China , Chengdu 610072, China ;2. Key Laboratory of Radiation Physics and Technology of the Ministry of Education ,Institute of Nuclear Science and Technology , Sichuan University , Chengdu 610064, China )Abstract: Using N-(4-quinolinoyl)-Gly-(2-cyanopyrrolidine) as scaffold ,we prolonged the linker with serine to obtain a FAPI derivative ATE-FAPI-03,which was subsequently labeled with131I byelectrophilic substitution. Then the in vitro stability ,Log P value ,binding affinity ,targeting properties and biodistribution behavior of 131I-FAPI-03 was evaluated. Results show that 131I-FAPI-03 was lipophilic and stable in vitro ,capable of specifically binding to FAPα-positive U87MG cells收稿日期:2023-12-04;修回日期:2024-01-18基金项目:中央高校基本科研业务费专项资金资助(2023SCU12132);四川省医学科学院.四川省人民医院青年人才基金(2022QN32)通信作者:李飞泽第37卷 第2期同 位 素Vol. 37 No. 22024年 4 月Journal of IsotopesApr. 2024fast with a major proportion trapped intracellularly. After 10 min of incubation,131I-FAPI-03 showed a specific binding rate of (22.00 ± 0.35)%,and the binding rate increased with the incubation time,to a peak of (37.5 ± 0.83)% at 180 min. However,the FAPα-negative MCF-7 cells exhibited very low uptake of 131I-FAPI-03 at any time point. The IC50 measured by the competition assay indicated significant binding property of 131I-FAPI-03. Biodistribution studies revealed that 131I-FAPI-03 could rapidly accumulate in tumor sites with an uptake of (14.90 ± 3.21)% ID/g at 5 min post injection. At 2 h post injection,131I-FAPI-03 displayed the highest tumor-to-muscle ratio of 43.7 ± 16.7. All above results provided important reference for the development of novel FAPα-targeting tracers.Key words: FAPα; 131I; FAPI; glioma肿瘤相关成纤维细胞(CAF)作为肿瘤微环境的主要组成部分,积极参与细胞外基质结构的重塑、肿瘤侵袭与转移、免疫抑制和耐药生成过程[1-3]。
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甘草次酸修饰多西紫杉醇磁性纳米粒的制备与表征作者:王莎莎陈家琦王华华黄胜楠贾永艳祝侠丽来源:《中国药房》2020年第19期摘要目的:制备甘草次酸修饰多西紫杉醇磁性纳米粒(GA-DTX-NGO/IONP-NPs),并对其理化性质进行评价。
方法:以磁性纳米氧化石墨烯(NGO/IONP)作为抗肿瘤药物载体,多西紫杉醇(DTX)为模型药物,甘草次酸(GA)為靶头分子。
采用水热法合成NGO/IONP、酰胺化反应合成GA修饰的壳聚糖(GA-CS)后,采用傅里叶红外光谱法、差示扫描量热法及振动样品磁测量法等对两者进行表征。
采用离子凝胶化法制备GA-DTX-NGO/IONP-NPs;采用透射电镜、纳米粒度分析仪等对其微观形态、粒径及Zeta电位进行观察和测定;采用超滤离心法测定其包封率和载药量;通过观察有无外加磁场时的状态考察其磁性;结合808 nm激光对其进行光热转换试验。
结果:成功合成了NGO/IONP和GA-CS,且NGO/IONP呈现超顺磁性。
GA-DTX-NGO/IONP-NPs在透射电镜下呈圆球状,粒径为(262.8±4.23) nm,Zeta电位为(13.6±1.51) mV,包封率为(94.29±0.50)%,载药量为(17.12±0.12)%。
GA-DTX-NGO/IONP-NPs的外观呈黑色,分散均匀;其在外加磁场下磁性纳米粒可定向移动,显示出良好的磁定向性。
在808 nm激光照射下,GA-DTX-NGO/IONP-NPs 具有良好的光热转换效应,且呈浓度和时间依赖趋势。
结论:本研究成功制备了一种磁性纳米载药系统GA-DTX-NGO/IONP-NPs,可为肿瘤的磁热-化疗联合治疗提供一定的理论依据。
关键词磁性纳米氧化石墨烯;甘草次酸;多西紫杉醇;磁性纳米粒ABSTRACT OBJECTIVE: To prepare Glycyrrhetinic acid-modified docetaxel magnetic nanoparticles (GA-DTX-NGO/IONP- NPs), and to evaluate its physicochemical properties. METHODS: Magnetic nano graphene oxide (NGO/IONP) was chosen as the anti-tumor drug carrier, docetaxel (DTX) as the model drug and glycyrrhetinic acid (GA) as the target molecule. Firstly, NGO/IONP was synthesized by hydrothermal method and GA-CS was synthesized by amidation reaction. Fourier IR spectrometer, DSC and vibration sample magnetic measuring instrument were used to characterize NGO/IONP and GA-CS. GA-DTX-NGO/IONP-NPs were prepared by the ion gelation method. TEM and particle size analyzer were used to observe and determine the morphology, particle size and Zeta potential of GA-DTX-NGO/IONP-NPs; the ultrafiltration-centrifugation method was used to determine encapsulation efficiency and drug loading amount; the magnetic properties were investigated by investigating the state with or without external magnetic field; the photothermal conversion test was carried out with laser irradiation of 808 nm. RESULTS: NGO/IONP and GA-CS were successfully synthesized, and NGO/IONP exhibited superparamagnetism characteristics. GA-DTX-NGO/IONP-NPs were spherical under TEM, the particle size was (262.8±4.23) nm and the Zeta potential was (13.6±1.51) mV. The encapsulation rate and drug loading amount were (94.29±0.50)% and (17.12±0.12)%,respectively. GA-DTX-NGO/IONP-NPs were black in appearance and evenly dispersed. Under the external magnetic field, the magnetic nanoparticles could move directionally, showing good magnetic properties. GA-DTX-NGO/IONP-NPs showed a good concentration- and time-dependent photothermal conversion effect under 808 nm laser irradiation. CONCLUSIONS: GA-DTX-NGO/IONP-NPs are successfully prepared. This study could provide some theoretical basis for the combined treatment of magnetic heating-chemotherapy for liver tumors.KEYWORDS Magnetic nano graphene oxide; Glycyrrhetinic acid; Docetaxel; Magnetic nanoparticles肝癌是危害人类健康的重大疾病之一 [1-2]。
“Graphene”研究及翻译摘要:查阅近5年我国SCI、EI期源刊有关石墨烯研究873篇,石墨烯研究的有关翻译存在很大差异。
从石墨烯的发现史及简介,谈石墨烯内涵及研究的相关翻译。
指出“石墨烯”有关术语翻译、英文题目、摘要撰写应注意的问题。
关键词:石墨烯;石墨烯术语;翻译石墨烯是目前发现的唯一存在的二维自由态原子晶体,它是构筑零维富勒烯、一维碳纳米管、三维体相石墨等sp2杂化碳的基本结构单元,具有很多奇异的电子及机械性能。
因而吸引了化学、材料等其他领域科学家的高度关注。
近5年我国SCI、EI期源刊研究论文873篇,论文质量良莠不齐,发表的论文有35.97%尚未被引用过,占国际论文被引的4.84%左右。
石墨烯研究的有关翻译也存在很大差异。
为了更好的进行国际学术交流,规范化专业术语。
本文就“graphene”的内涵及翻译谈以下看法。
l “Graphene”的发现史及简介1962年,Boehm等人在电镜上观察到了数层甚至单层石墨(氧化物)的存在,1975年van Bom-mel等人报道少层石墨片的外延生长研究,1999年德克萨斯大学奥斯汀分校的R Ruoff等人对用透明胶带从块体石墨剥离薄层石墨片的尝试进行相关报道。
2004年曼彻斯特大学的Novoselov和Geim小组以石墨为原料,通过微机械力剥离法得到一系列叫作二维原子晶体的新材料——石墨烯,并于10月22日在Sclence期刊上发表有关少层乃至单层石墨片的独特电学性质的文章,2010年Gelm和No-voselov获得了诺贝尔物理学奖。
石墨烯有着巨大的比表面积(2630 m2/g)、极高的杨氏模量(1.06 TPa)和断裂应力(~130GPa)、超高电导率(~106 S/cm)和热导率(5000W/m·K)。
石墨烯中的载流子迁移率远高于传统的硅材料,室温下载流子的本征迁移率高达200000 cm2/V.s),而典型的硅场效应晶体管的电子迁移率仅约1000 cm2/V.s。
固体脂质纳米粒及其脑靶向作用的研究进展李海珍;胡彦武;姚慧敏【摘要】固体脂质纳米粒(SLN)是近年新兴起的一种亚微粒给药系统,其具有稳定性高、生物相容性高、靶向性好、可用于大规模生产等优点,引起相关研究者的高度关注.本文查阅中外文献,对SLN的制备技术方法、理化性质的测定及其脑靶向作用进行总结归纳,为SLN的进一步研究应用提供一定的参考依据.【期刊名称】《通化师范学院学报》【年(卷),期】2018(039)008【总页数】7页(P43-49)【关键词】固体脂质纳米粒;制备方法;理化性质;脑靶向【作者】李海珍;胡彦武;姚慧敏【作者单位】通化师范学院吉林省长白山药用植物研究重点实验室吉林通化134002;长春中医药大学药学院;通化师范学院吉林省长白山药用植物研究重点实验室吉林通化134002;通化师范学院吉林通化134002【正文语种】中文【中图分类】R96固体脂质纳米粒(Solid Lipid Nanoparticle,SLN)的概念是在1991年由Müller首次提出,以固态的天然或合成的高熔点类脂作为载药材料,使药物包裹于脂质中或分散在纳米粒表面形成粒径约为50~1000nm的固态胶体的新型药物传递载体,可替代脂质体、微乳、聚合物胶束等传统药物递送系统[1].SLN结合了其他几个新型载体系统的优点,既有聚合物纳米粒的高生物相容性和物理稳定性,避免药物氧化、降解或泄漏以及可控制药物释放及良好的靶向性[2],又兼有脂质体、乳剂的低毒性、操作简单,可用于大规模生产的优点[2-4].此外,由于SLN的药物是包裹在脂质材料内部,因此解决了药物水溶性差的问题,同时可延长药物的半衰期,从而克服了其他载体系统存在的生物利用度低等问题[4].本文就近年来国内外固体脂质纳米粒的制备方法与技术,理化性质的测定及临床应用,尤其是作用于脑靶向的应用进行综述.1 固体脂质纳米粒的制备技术与方法1.1 辅料SLN是由脂质材料、乳化剂、水及有机溶剂组成.SLN能否形成取决于脂质材料的类型,通常使用的天然或合成材料作为骨架脂质,常用脂质的材料包括三酰甘油酯(三月桂酸甘油酯、三硬脂酸甘油酯等)、部分甘油酯(山嵛酸甘油酯、肉豆蔻甘油酯等)、脂肪酸(硬脂酸、软脂酸)、类固醇激素(胆固醇)和蜡(棕榈酸鲸蜡酯)等具有有生物相容性,体内降解、低毒性的脂质材料[5].此外,一些研究表明,加入一定比例的液态脂质,如油酸、中链甘油三油脂等,可提高药物的包封率及载药量.因此,实验中应根据药物性质及制备方法等处方设计因素选择合适的脂质材料.表面活性剂的类型和用量与SLN的粒径、包封率等性质密切相关.不同的制备方法或阶段表面活性剂有乳化剂和稳定剂作用,作为乳化剂可降低溶液的表面张力;作为稳定剂使纳米粒稳定分散,稳定SLN.此外,乳化剂的混合使用能有效防止颗粒团聚[6-7],因此在制备过程中常使用两种或两种以上混合表面活性剂.常用的表面活性剂有胆酸盐类(去氢胆酸钠、胆酸钠等)、磷脂类(大豆卵磷脂、蛋黄磷脂等)、短链醇类(丁酸、丁醇等)以及非离子表面活性剂(如泊洛沙姆系列、聚山梨酯系列等)[8-9].1.2 SLN制备方法1.2.1 乳化蒸发-低温固化法将适量的药物和载药脂质溶于适当的有机溶剂(75~80℃)中形成有机相,另取表面活性剂溶于纯水中作为水相(75~80℃),在恒温条件下(75~80℃)将有机相加入水相中高速搅拌乳化并除去有机溶剂,冰水浴固化一段时间后,经0.45微孔滤膜过滤即得SLN[10].与其他制备方法相比较,此方法具有设备简单易得,成本较低,所得SLN混悬液分散均匀,适合实验室研究使用等特点.Yadav A等[10]制备的白藜芦醇SLNs(R-SLNs)的粒径为286nm,药物包封率为91.25%,具有缓释作用,脑内白藜芦醇(RSV)含量为游离RSV时的4.5倍.神经行为学分析表明,R-SLNs成功地改善了bccao大鼠的认知功能,有希望作为治疗与年龄相关的神经退行性疾病的一种新治疗策略.张洪等[11]采用乳化蒸发-低温固化法成功制备了稳定的索拉非尼SLN,所制得的SLN呈类球形,平均粒径为(108.2±7.0)nm,分布均匀,平均包封率为(73.49±1.87)%,体外试验结果表明其具有缓释作用.Xiaolie He等[12]采用乳化低温凝固法合成了姜黄素和右旋氨基丁醇固体脂质纳米粒(Cur-DL-SLNs),并采用MTT法、流式细胞仪检测细胞摄取等方法研究了纳米粒在皮质酮诱导的大抑郁模型中的抗抑郁活性,结果表明,Cur-DL-SLNs可能成为治疗重度抑郁症的有效手段.1.2.2 微乳法首先将药物与脂质材料水浴加热熔融后加入乳化剂、助乳化剂和纯水制备透明或半透明O/W或W/O型微乳,然后将微乳快速分散于0~2℃纯水中即得SLN.该法的缺点是乳化剂用量大,不易除去,且载药量较低;此外,由于微乳是热力学稳定体系,当温度发生改变时纳米粒可恢复成微乳[13].优点是设备简单容易操作,基本无需使用三氯甲烷等有毒有机溶剂,有利于大规模生产的实现.李楠等[14]采用微乳法,根据伪三元相图法考察筛选微乳中油相、乳化剂、助乳化剂三相因素,确定最佳微乳处方;以包封率和载药量为指标,采用正交试验进行最终SLN处方优化,所得姜黄素SLN粒径较小,包封率及载药量较好.Elham sadati Behbahani等[15]以硬脂酸和三棕榈酸甘油酯为固体脂质,Tween 80和Span 80为表面活性剂,通过微乳液和超声法制备了姜黄素SLNS(Cur-SLNs),在中心复合设计基础上采用响应面法对考察SLNS的平均直径和包封效率关系.结果表明,Cur-SLNs呈球形,平均直径21nm,粒径和包封率分别为112.0±2.6nm和98.7±0.3%,且具有缓释效果.朴林梅[16]考察不同方法制备月见草油SLN,与其他方法相比较,微乳法制备的SLN包封率高且粒径较小,可确定为制备方法.同时进行SLN质量评价和药效学评价,实验表明月见草油SLN稳定性良好,可用于治疗急性高脂血症.1.2.3 薄膜-超声法将药物和载药脂质溶于有机溶剂中旋转蒸发,形成均匀薄膜,与含表面活性剂的水相混合,冰水浴条件下超声后得SLN.此方法操作简便,但不易成膜且成膜不均匀,所制备的SLN粒径分布较广,易产生金属污染.该方法适合小分子成份如黄酮类、倍半萜类等药物制备.罗小燕[17]等人使用薄膜-超声法以包封率为指标,采用正交设计优化法优化处方,所制备的芦丁SLN具有缓释效果.严春临等[18]以薄膜-超声法吴茱萸次碱SLN(Rut-SLN),采用星点设计对处方的药脂比、初乳化剂与脂质质量比、乳化剂质量三个因素进行优化,以粒径、包封率和Zeta电位为评价指标,采用效应面法选取最佳处方,所得Rut-SLN性质稳定、包封率高.侯军[19]以硬脂酸为脂质,卵磷脂为载体,采用旋转薄膜蒸发法制备盐酸小檗碱SLN(BH-SLN),以包封率为指标,采用正交试验筛选处方,结果表明,药脂比、硬脂酸和卵磷脂质量比、Tween-80浓度是影响包封率和载药量的主要因素,体外释放试验也表明BH-SLN具有缓释效应.1.2.4 高压匀质法将药物和载药脂质加热熔融,边搅拌边加入含表面活性剂的水溶液中制成初乳,经高压匀质机均质数次,冷却至室温即可形成SLN混悬液.高压均质法是目前工业化大规模生产纳米粒的主要方法,制得SLN粒径较小;同时又存在对设备的要求较高,制得纳米粒相对不稳定,易受温度影响而析出脂质等问题.周华峰等[20]采用高压均质法制备咪喹莫特SLN透皮吸收制剂,其优化条件下制备的药物SLN对皮肤无刺激性,有较好的体外释放性能及皮肤贮存能力,有望作为咪喹莫特透皮给药新制剂.Rompicharla SVK等[21]采用高压匀质法,以胆固醇为脂质,以泊洛沙姆-188为稳定剂制备姜黄素SLN(cur-SLN),采用质量优化设计法进行处方优化.优化的SLN粒径较小、分布较窄,包封率为76.9±1.9%,并通过DSC、FTIR、XRD和药物释放对SLN进行了进一步表征;体外细胞实验表明,与游离姜黄素相比,cur-SLN具有更好的细胞毒性和摄取性,而且SLN诱导的细胞凋亡明显增加,为该制剂在临床上用于癌症治疗提供了可能.Elisabett等[22]研究结果表明,高压均质法生产的黄体酮SLN(PRG-SLN)有良好的物理和化学稳定性,均质均匀,在生产后6个月内无团聚现象,对PRG具有较高的包封率,能有效控制PRG的释放和皮肤吸收率.1.2.5 超声分散法取药物与载药脂质加热熔融后作为油相,将含表面活性剂的水溶液趁热加入油相中搅拌后,用带探头的超声分散仪在一定温度下超声分散,将分散后的液体在搅拌下迅速加入分散相(0~2℃)中,搅拌固化后得SLN.该方法工艺简单易于操作,制得纳米粒粒径较小,且不用使用有机溶剂,但其制得的混悬液浓度较低.吕佳等[23]使用超声分散法制备了苦参碱SLN用于肝纤维化的治疗,采用正交试验优选处方工艺,制备的SLN性质稳定,粒径较小且分布均匀.Mara Ferreira等[24]以十六烷基棕榈酸酯为基质将水溶性差的药物甲氨蝶呤(MTX)包裹于SLN中,并采用依那西普(etanercep)与SLNS结合的联合治疗方法.脂质纳米粒直径从292nm到356nm,与人角质细胞和成纤维细胞具有生物相容性.体外研究表明,MTX在生理和皮肤模拟环境下具有较好的缓释特性.猪耳皮肤渗透试验表明,MTX-SLNS和MTX-etanercep-SLNS可显著提高MTX的生物利用度.Kamel M Kamel等[25]用70%乙醇提取肉桂和牛至的活性成分,采用超声分散法制备肉桂和牛至提取物SLN,并采用壳聚糖包裹形成核/壳纳米颗粒,且物理化学性质稳定.实验结果证实,这两种提取物对结肠癌具有细胞毒活性,此外,其与5-氟尿嘧啶可降低毒副作用.2 药物固体脂质纳米粒的理化性质及表征2.1 外观形态检测一般采用负染法进行检测,取稀释的SLN于铜网上,加2%的磷钨酸染色后使用透射电镜观察其外形及粒径,一般以完整、分布均匀的球形或类球形为最好.2.2 粒径及Zeta电位检测SLN的外观形态、粒径及Zeta电位检测是其处方优化时考察的重要指标.粒径及Zeta电位检测最常用的检测仪器是激光粒度测定仪及激光电位粒径分析仪,可以同时对二者进行检测,也有单独使用光子相关光谱、电位分析仪等仪器检测电位,使用粒径检测仪等检测粒径.SLN的粒径应在50~1000nm的且呈正态分布,Zeta电位一般控制在-20~-45mV.Zeta电位是指粒子表面与中性溶液之间的电位差,根据扩散双电层原理,纳米粒分散体系的稳定性主要取决于Zeta电位的大小,粒子表面电荷量直接影响粒子间斥力势能和溶剂化作用的大小,进而影响非均相体系的稳定性[26].Zeta电位(绝对值)高的粒子间的电荷排斥作用大,因而不容易发生聚集,使整个体系处于相对平衡的状态.2.3 包封率与载药量包封率(Entrapment efficiency,EE)与载药量(Loading efficiency,LE)的检测需先测定药物总量W总和未包进纳米粒的药物的量W游离,然后按照下列公式[27]计算SLN的包封率及载药量.式中W载体是纳米粒中载体的质量.药物总量测定是使用有机溶剂(甲醇、无水乙醇等)或物理方法(如高速离心)将纳米乳破乳后测定的药物的含量即为W总测,将SLN与游离药物分离后测定溶液中药物的含量为W游离.文献报道[28],分离SLN与游离药物的方法主要有超速离心法、葡聚糖凝胶层析柱法、超滤离心法、透析法等.葡聚糖凝胶层析柱法是利用分子筛的原理,将未进入凝胶孔内的大分子物质先洗脱下来,进入凝胶孔的小分子药物被洗脱下来,从而分离纳米粒和游离药物.此方法重现性好、快速有效、但成本较高[29].超速离心法是将SLN溶液加入超速离心管中,利用离心力将纳米粒与游离药物分离,方法简单快速[30].超滤法是将SLN加入适当截留分子量的超滤离心管中,离心将固体脂质纳米粒与游离药物分离,此方法在常温下进行,设备简单无相变,易于操作[31].透析法是利用小分子物质可通半透膜而大分子则无法通过的性质,把药物放入置于透析介质中的透析袋中,游离药物可透过透析袋渗出到透析袋外,而纳米粒则因较大粒径而截留在透析袋内而达到分离效果[32].SLN的载药量及包封率与药物的溶解性有关.脂溶性药物在水中溶解性差,易与载药脂质相结合,其纳米粒在水中分散量较小,包封率高;水溶性药物则相反,不易与脂质结合,包封率较低[33].2.4 体外释放度SLN通常有3种包封结构模型:(1)固溶体模型,药物以分子形态分散于脂质材料中;(2)核-壳模型,药物聚集于外壳,表现为突释行为;(3)核-壳模型,药物浓集于内核,表现为缓释行为.因此,考察体外释放度可以初步判定药物包裹模型.其方法是将药物脂质置于透析袋中,在与释药部位相似生理环境的溶液中进行体外释放度的测定.2.5 结晶度和多晶型分析脂质纳米粒的结晶度和晶型可以反映脂质与药物相互作用的程度,是考察SLN性能的重要指标之一.示差扫描量热分析(Differential scan⁃ningcalorimetry,DSC)是测量输入到试样和参比物的热流量差或功率差与温度或时间的关系,可检测结晶相变的的特征;X-射线衍射(X-ray dif⁃fractometry,XRD)是利用晶体形成的X射线衍射,对物质进行内部原子在空间分布状况的结构分析方法,可检测药物晶型,这两种技术广泛用于药物晶型的检测.Rompicharla SVK等[21]采用DSC和XRD对cur-SLN进行表征,二者结果均显示游离姜黄素具有结晶性质,而cur-SLN则丧失了结晶性质,表明药物处于熔融状态,包裹于脂质中.Kuldeep Rajpoot等[22]对奥沙利柏 SLN(op-SLN)进行表征,其中XRD谱图中奥沙利铂药物具有特征衍射峰,而op-SLN XRD谱中特征峰消失,表明奥沙利铂的以非晶形状态分散于SLN中;DSC研究中奥利沙铂在259.7℃有一熔融峰,在奥沙利铂op-SLN图中则无此熔融峰,表明药物此时处于非晶形状态,结果与XRD相吻合.3 SLN作用于脑靶向的研究3.1 脑靶向作用的限制中枢神经系统疾病如脑梗死、脑肿瘤、偏头痛、血管性痴呆等发病率在逐年持续增高,但由于血脑屏障阻碍药物作用于治疗部位,目前上市药物无法发挥预期作用.血脑屏障(brainbloodbar⁃rier,BBB)存在于中枢神经系统(Central Nervous System,CNS)与血液间,是维持脑部自身的微环境动态平衡的生理屏障,由脑毛细血管内皮细胞、完整结构基膜和神经胶质膜3层结构构成,属于神经血管单元[35],它不仅有供给脑组织营养的作用,也可通过调节外周血液与CNS之间物质交换,限制血液中的有害物质进入脑组织,保证脑内环境的相对稳定,对大脑形成保护作用.然而其独特结构也是药物作用于脑组织的最大屏障,几乎阻碍了所有大分子药物(如基因片段、酶类等)及98%的小分子药物透过BBB到达CNS.故而多数药物无法到达作用靶点或作用靶点的药物浓度低于最低有效治疗浓度而不能发挥药效,从而限制了很多药物应用于CNS疾病[36].除此之外,外排蛋白如P-糖蛋白(P-gp)的作用也成为脂溶性的小分子药物进入脑组织的障碍.3.2 脑靶向制剂的研究目前,能够绕过BBB直接进入到CNS的给药方式及提高药物透过血脑屏障量的脑靶向制剂已经成为治疗CNS相关疾病的有效手段.理想的脑靶向制剂应具备趋脑性和透过BBB有效性[37].根据BBB的独特结构和转运性质,目前常用的促进药物通过BBB的方法包括制备前体药物、血脑屏障的可逆开放法,即添加适量渗透促进剂使有效物质能够穿过BBB作用于脑部、改变给药途径如脑植入或运用载体系统如聚合物纳米粒、固体脂质纳米粒等实现脑靶向给药[38].此外,有研究证实,鼻粘膜给药可使药物避开BBB直接作用于大脑,张文静[39]制备的富马酸喹硫平SLN原位凝胶(QF-SLN-gel)通过鼻腔给药,不仅可以避开BBB直接进入大脑,避免首过效应,而且鼻粘膜的黏附量增加,提高其在脑内含药量,而达到靶向作用.3.3 SLN作用于脑靶向研究SLN作为载药入脑的新型给药系统受到国内外高度关注.但对其透过BBB机制研究不甚明确,可能的机制有:(1)SLN粒径较小,可以直接穿过血脑屏障而发挥药效;(2)免疫吞噬细胞转运,大脑处于免疫系统的监控下,免疫细胞如中性粒细胞、巨噬细胞等可以选择性地跨过BBB到达 CNS[40].因此,载药 SLN 可被免疫细胞吞噬后释放并扩散入脑.Afergan E[41]实验表明,完整的脂质体可通过被单核细胞吞噬而透过BBB进入大鼠和兔的脑组织.(3)与脑血管内皮细胞发生膜融合[42],BBB结构与内皮组织紧密相连,有研究表明[43]带有负电荷的SLN可通过内皮细胞的连接处直接进入脑部.(4)减少P-gp的外排作用,研究表明[44],SLN包裹能有效躲避P-gp的外排作用,增加药物在大脑内皮细胞中的积聚.(5)表面活性剂作用,SLN含表面活性剂,可提高细胞膜对脂质的溶解度,从而增加血管内皮细胞膜的流动性,提高了BBB对药物的通透性;此外网状内皮系统具有吞噬作用,能将SLN从血液中除去,通过对纳米粒的结构修饰,可延长纳米粒体内循环时间,并避开网状内皮系统的清除作用[45].4 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张璇,赵文,高哲,等. 果胶与多酚相互作用机制及其对食品加工特性影响的研究进展[J]. 食品工业科技,2024,45(1):378−386.doi: 10.13386/j.issn1002-0306.2023030201ZHANG Xuan, ZHAO Wen, GAO Zhe, et al. Research Progress on the Interaction Mechanism of Pectin and Polyphenol and Their Effect on Food Processing Characteristics[J]. Science and Technology of Food Industry, 2024, 45(1): 378−386. (in Chinese with English abstract). doi: 10.13386/j.issn1002-0306.2023030201· 专题综述 ·果胶与多酚相互作用机制及其对食品加工特性影响的研究进展张 璇1,赵 文1,2,高 哲1,李美娇1,吴梦颖1,周 茜1,*(1.河北农业大学食品科技学院,河北保定 071000;2.河北省农产品加工工程技术研究中心,河北保定 071000)摘 要:果胶和多酚共存于植物性食品体系中。
除天然存在的果胶-多酚复合物外,在受到加热、高压、干燥等外力作用的食品加工过程中,两者会快速且自发地进行相互作用。
果胶与多酚之间的相互作用会影响食品的理化性质和功能特性。
本文总结了果胶与多酚相互作用的机制、内部和外部多重影响因素、主要的研究方法并结合 Langmuir 和Freundlich 常见的等温吸附模型对果胶与多酚之间的吸附行为进行描述和定量表征。
此外还探讨了两者相互作用对食品加工特性及多酚生物可利用性的影响,分析了该领域的研究方向和发展趋势。
关键词:果胶,多酚,相互作用,等温吸附模型,生物可利用性本文网刊:中图分类号:TS255.1 文献标识码:A 文章编号:1002−0306(2024)01−0378−09DOI: 10.13386/j.issn1002-0306.2023030201Research Progress on the Interaction Mechanism of Pectin and Polyphenol and Their Effect on Food Processing CharacteristicsZHANG Xuan 1,ZHAO Wen 1,2,GAO Zhe 1,LI Meijiao 1,WU Mengying 1,ZHOU Qian 1, *(1.College of Food Science and Technology, Hebei Agricultural University, Baoding 071000, China ;2.Engineering Technology Research Center for Agricultural Product Processing of Hebei, Baoding 071000, China )Abstract :The pectin and polyphenols that co-exist in plant-based food systems form complexes in natural conditions and interact quickly and spontaneously during food processing due to external forces, such as heating, high pressure, and drying.The interaction can affect the physicochemical properties and functional properties of foods. This review summarizes the mechanisms, multiple internal and external influencing factors, and main research methods involved in pectin and polyphenol interaction, while their adsorption behavior is described and quantitatively characterized using the isothermal adsorption model commonly used by Langmuir and Freundlich. In addition, the impact of pectin and polyphenol interaction on food processing characteristics and polyphenol bioavailability is also discussed, and the future research prospects and development trends in this field are analyzed.Key words :pectin ;polyphenol ;interactions ;isothermal adsorption models ;bioavailability果胶是一种酸性杂多糖,广泛存在于蔬菜、水果和谷物等植物细胞壁中,在人类健康中发挥着重要的作用[1]。
Scaling Behaviors of Graphene Nanoribbon FETs:A Three Dimensional Quantum Simulation StudyYijian Ouyang*, Youngki Yoon*, and Jing Guo†Department of Electrical and Computer EngineeringUniversity of Florida, Gainesville, FL, 32611ABSTRACTThe scaling behaviors of graphene nanoribbon (GNR) Schottky barrier field-effect transistors (SBFETs) are studied by solving the non-equilibrium Green’s function (NEGF) transport equation in an atomistic basis set self-consistently with a three-dimensional Poisson equation. The armchair edge GNR channel shares similarities with a zigzag CNT, but it has a different geometry and quantum confinement boundary condition in the transverse direction. The results indicate that the I-V characteristics are ambipolar and strongly depend on the GNR width because the bandgap of the GNR is approximately inversely proportional to its width, which agrees with recent experiments. A multiple gate geometry improves immunity to short channel effects, but it offers smaller improvement than it does for Si MOSFETs in terms of the on-current and transconductance. Reducing the oxide thickness is more useful for improving transistor performance than using a high-κ gate insulator. Significant increase of the minimal leakage current is observed when the channel length is scaled below 10 nm because the small effective mass facilitates strong source-drain tunneling. The GNRFET, therefore, does not promise extending the ultimate scaling limit of Si MOSFETs. The intrinsic switching speed of a GNR SBFET, however, is several times faster than that of Si MOSFETs, which couldlead to promising high speed electronics applications, where the large leakage of GNR SBFETs is of less concern.* These authors contributed equally to this work† e-mail: guoj@I. IntroductionThe continuous scaling of silicon transistors has been the driving engine for the exponential growth of digital information processing systems over the last decades. The Si transistor in production today is below the 100 nm scale and has entered the nanoelectronics regime. With the scaling limit of Si field-effect transistors (FETs) in sight, a large group of emerging research devices are being extensively studied [1]. Among them, carbon-based nanostructure FETs are the forerunners due to their exceptionally excellent carrier transport properties [2]. Carbon nanotube (CNT) FETs with excellent device performance have been demonstrated [3]. With promising progress on fabricating and patterning a graphene layer, graphene electronics has been a topic of strong research interests [4-5]. A narrow strip of graphene, graphene nanoribbon (GNR), can be either metallic or semiconducting, depending on its structure [6]. An exceptionally high mobility (~10,000 cm2/V-s) of graphene and GNRs has been demonstrated experimentally [4] and theoretically [7], which leads to the promise of near ballistic transport in a nanoscale GNRFET. The channel geometry of a GNRFET can be defined by lithography, which offers potentially better control over a CNTFET. The concept of all graphene circuits, in which GNRFETs are connected by metallic GNR interconnects, has been proposed [8]. Quite recently great progress has been achieved in fabricatinggraphene filed-effect devices [9, 10]. A recent theoretical study assessed the performance limits of GNRFETs, but it is based on a semiclassical transport model coupled to a simple treatment of self-consistent electrostatics [11]. Quantum tunneling effects and electrostatic short channel effects were not treated, which makes it difficult to explore scaling behaviors and ultimate scaling limits of GNR SBFETs, where the tunneling effects cannot be ignored.In this work, a comprehensive study on the scaling behaviors of GNRFETs is performed by solving an atomistic quantum transport equation based on the non-equilibrium Green’s function (NEGF) formalism self-consistently with a three-dimensional (3D) Poisson equation. The dependence of the I-V characteristics, transconductance, subthreshold swing, drain induced barrier lower (DIBL) on the channel length are studied and compared for the single gate (SG), double gate (DG), and wrapped around gate (WG) geometries. The scaling characteristics of the gate insulator thickness and dielectric constant are explored. The roles of the contact size and Schottky barrier height are examined. The intrinsic delay of the GNRFET is simulated and compared to that projected for the Si FETs at the end of the roadmap.Transistors with different device structures can operate in different ways. For a conventional MOSFET with heavily doped source and drain extensions, the gate modulates the channel conductance. If the heavily doped semiconductor source and drain are replaced by metal source and drain, Schottky barriers (SBs) form between the contacts and the channel, and a SBFET is obtained. The transistor behavior above the threshold is achieved by modulating the tunneling current through the SBs at the twoends of the channel. In this study, we focus our attention on GNR SBFETs with metalsource and drain contacts [9, 10].II. ApproachDevice Structure: We simulated GNRFETs with three different gate geometries at roomtemperature (T =300 K) to explore the effect of gate geometry on the performances ofGNRFETs. Fig. 1a shows SG GNRFET, which has the advantage of easy fabrication butis not optimized for good gate control and suppression of short channel effects. Fig. 1b isDG GNRFET, which sandwiches a graphene ribbon between two gates. Fig. 1c shows thecross section of a WG GNRFET (in the plane normal to the channel direction), and theGNR is surrounded by the gate. The WG GNRFET is most challenging for fabrication,but it offers ideal gate control. The nominal device parameters are as follows. The SiO 2gate oxide thickness is t ox =2 nm and the relative dielectric constant is εr =4. The GNRchannel has armchair edges, as shown in Fig. 2. The ribbon index N denotes the numberof carbon atom dimmer lines, following the definition in Ref. [6]. The N =12 armchairedge GNR channel has a width of ~13.5 Å, which results in a bandgap of E g ≈0.83 eV.The channel length is L ch =20 nm. The metal source/drain is directly attached to the GNRchannel and the Schottky barrier height between the source/drain and the channel is a halfof the GNR band gap, 2/g Bp Bn E =Φ=Φ. The flat-band voltage is zero. A powersupply voltage of V DD =0.5 V is used. The nominal device parameters are varied toexplore different scaling issues.Quantum Transport: The DC characteristics of GNRFETs are simulated by solving theSchrödinger equation using the non-equilibrium Green’s function (NEGF) formalismself-consistently with a 3D Poisson equation [12]. Ballistic transport is assumed [13]. Atight binding Hamiltonian with a p z orbital basis set is used to describe an atomisticphysical observation of the GNR channel. One p z orbital per atom is enough for theatomistic physical description since s, p x , and p y are far from the Fermi level and do notplay important roles for carrier transport. A p z orbital coupling parameter of 3 eV is usedand only the nearest neighbor coupling is considered. In this study, we use a real spaceapproach rather than a mode space approach. The mode space approach iscomputationally efficient but it requires uniform potential in transverse direction. To treatpossibly varying potential in channel width direction, we use a real space approach. Thesize of the Hamiltonian is , where N is the number of carbon atoms in the channel.The retarded Green’s function of the device is computed as,N N × , (1)11])0[()(−2+−−−−+=ΣΣU H i i E E G where H is the tight binding Hamiltonian matrix of the GNR channel, U is the self-consistent potential matrix determined by the solution of a 3D Poisson equation, andand are the self-energies of the metal source and drain contacts, as shown in Fig. 2.The charge density can be computed as,1Σ2Σ(){∫+∞∞−−−−⋅−=))]((sgn[),()](sgn[)()(11F N N i E E x E E f x E D x E E dE q x Q ()}))]((sgn[),(22F N E E x E E f x E D −−+, (2)where q is the electron charge magnitude, sgn(E )is the sign function, is the source (drain) Fermi level, and is the local density of states due to the source2,1F F E ),(2,1x E D(drain) contact, which is computed by the NEGF method. The charge neutrality level[14], , is at the middle of band gap because the conduction band and the valenceband of the GNR are symmetric.)(x E NThree-Dimensional Electrostatics: The self-consistent potential is computed from thecharge density and the electrode potentials using the Poisson equation,()[]()r qQ r U K K =∇⋅∇ε (3) where ()r U K is the electron potential energy which determines the diagonal entry of thepotential energy matrix in Eq. (1), ε is the dielectric constant, and is the chargedensity. Because the electric field varies in all dimensions for the simulated devicestructure, a 3D Poisson equation is numerically solved using the finite element method(FEM). The FEM has the advantage to treat complex device geometries and boundariesbetween different dielectric materials.()r Q KDevice performance metrics: The source-drain current is computed using the NEGFmethod once the self-consistency between the NEGF transport equation and the Poissonequation is achieved. The on current, off current and minimal leakage current can beextracted from the simulated I-V characteristics.We compute the intrinsic delay as ()on off on Q Q I /τ=−, where Q on and Q off are thetotal charge in the channel at on state and off state, respectively, and I on is the on current[15]. The total charge in the channel is calculated by , where Q i (x) isthe charge density as a function of channel position. The off state is chosen as the state atdx x Q Q chL i ch ∫=0)(which a GNRFET delivers the minimum source-drain current, V G =V D /2, as discussed later. It can be shifted to if a proper gate work function (and therefore, the threshold voltage) could be achieved. The calculation of the intrinsic delay assumes zero parasitic capacitance. The parasitic capacitance between electrodes impairs the performance of nanoscale transistors in practice. The intrinsic delay, therefore, indicates the upper limit of the switching speed.0=G VIII. Simulation resultsWe first compare the switching on and switching off characteristics of GNRFETs with different gate geometries. The switching on characteristics are described by simulating the transconductance, and the switching off performance and the immunity of the short channel effects are studied by simulating the subthreshold swing and DIBL. Fig. 3 plots the transconductance, /m D g I V G =∂∂, which is the ratio of current variation to the gate voltage variation at on state, as a function of the channel length for three types of gate geometries with nominal device parameters. The following observations were made. First, the transconductance remains approximately constant for L ch >15 nm. The reason is that the current does not depend on the channel length in the ballistic transport regime, which is different from the diffusive transport regime. Second, as the channel length scales down and approaches to 10 nm, the transconductance decreases because the gate has worse control over the channel due to electrostatic short channel effect, which is conspicuous for SG GNRFET. Third, the transconductances of DG and WG GNRFET are 58 % and 85 % larger than that of SG GNRFET at L ch =20 nm. Using a DG structure increases the transconductance but does not double transconductance. In contrast, DG SiFETs have been actively studied for the promise of the on current advantage over their SG counterpart. The reason is that for a transistor operating at the conventional MOSFET limit (in which the semiconductor capacitance is much larger than the gate insulator capacitance), a double gate structure leads to a two times larger gate insulator capacitance, and therefore, two times larger total gate capacitance and transconductance. For a transistor operating at the quantum capacitance limit (in which the gate insulator capacitance is much larger than the semiconductor capacitance of the channel) [16, 17], the total gate capacitance is limited by the semiconductor capacitance and is independent of the gate insulator capacitance. A double gate geometry does not lead to an improvement of the total gate capacitance and the transconductance. The GNRFET has a one-dimensional channel with a monolayer of carbon atoms. Its small semiconductor capacitance (due to a low density of states) makes it operate closer to the quantum capacitance limit than Si FETs. The advantage of using multiple gate structures, therefore, is smaller.Fig. 4a shows the variation of subthreshold swing with different channel length. The subthreshold swing, S , is calculated by /log G V D I ΔΔ at subthreshold region. With 10 nm GNR channel, the gate electrostatic control is not sufficient to keep the subthreshold swing as the longer channel devices. The subthreshold swing, however, remains approximately constant beyond L ch =15 nm for all gate geometries. The gate geometry dependence of the subthreshold swing for the nominal device with L ch =20 nm is not strong, and the variation of S is less than 6 %. The advantage of multiple gate geometry for the immunity to the short channel effects, however, is more obvious at a shorter channel length. If we choose S =100 mV/decade as the criterion (the dotted line inFig. 4a), the subthreshold swing of SG GNRFET at L ch =10 nm does not meet it. The criterion, however, can be met by using a DG geometry (S~96 mV/decade) or a WG geometry (~91 mV/decade).Fig. 4b shows DIBL vs. channel length. DIBL is a feature of short channel effects and can quantitatively be expressed as /t V V D ΔΔ, where V t is the threshold voltage. At a channel length of 10 nm, the short channel effect is severe and drain voltage affects the barrier at the beginning of the channel a lot. When channel length increases, DIBL, however, decreases drastically and it remains approximately constant beyond L ch =20 nm. For the nominal device with L ch =20 nm, DIBL has nearly no difference among all three gate geometries. If we specify 100 mV/V as the criterion (the dotted line in Fig. 4b), at L ch =10 nm, DIBL of SG GNRFET is much larger than the criterion, whereas that of DG or WG GNRFET is just above or even less than the criterion, which means GNRFETs with multiple gate geometries can extend the scaling down of channel length more than SG GNRFET. The observation is consistent with that of Fig. 4a.We next study the effect of power supply voltages. The I D vs. V G characteristics for the SG nominal device is plotted in Fig. 5a. As the Schottky barrier height is a half of the bandgap, the minimum currents occur at a gate voltage of V G,min =1/2 V D , at which the conduction band bending at the source end of the channel is symmetric to the valence band bending at the drain end of the channel, and the electron current is equal to the hole current. The condition of achieving the minimal leakage current is the same as CNT SBFET with middle gap SBs [18]. Increasing the drain voltage leads to an exponential increase of the minimal leakage current, which indicates the importance of proper designing of the power supply voltage for achieving sufficiently small leakage current.The minimal leakage bias point can be shifted to V G≈0 in order to achieve a small off current (at V G=0) by properly designing the transistor threshold voltage (e.g., by gate work function design). We, therefore, obtain the off state characteristics at V G,min=V DD/2 and the on state characteristics at V G=V G,min+V DD from the simulated I-V for GNRFETs with a zero flat band voltage. The output characteristics in Fig.5b show typical linear and saturation regimes. When V G is increased, saturation current is increased due to a larger voltage drop between the gate and the source contact and a larger energy range for carrier injection from the source contact into the channel.The effect of channel length scaling on SG GNRFET I-V characteristic is explored in Fig. 6. At V D=0.5 V, the off current is increased when channel length decreases to a small value. For a channel length of 5 nm, direct tunneling from the source to drain leads to a large leakage current, and the gate voltage can hardly modulate the current. The transistor is too leaky to have appreciable difference between on and off states. For channel length of 10 nm, the on-off current ratio is greatly improved to near 240. Increasing the channel length to 15 nm, the on-off current ratio is further increased to about 1800 due to decreased direct tunneling current at off state. However, after channel length exceeds 15 nm, the increase in on-off current ratio is not significant. This is because the device is simulated at ballistic limit. (The state-of-the-art short channel CNTFETs already operate close to ballistic limit [3].) Further increasing the channel length hardly changes the on current or off current, nor does the on-off current ratio while for conventional MOSFET, increasing the channel length will cause the channel resistance to increase proportionally.The I D-V D characteristics in Fig. 6b confirm the results in Fig. 6a. For 5 nm and 10 nm long channels, direct tunneling from the source to drain and electrostatic short channel effects are severe, so no decent saturation of I D-V D characteristics is observed. The devices with extremely short channel operate more like a conductor rather than a transistor at V G=0.75 V. For channel length of 15 to 25 nm, typical transistor I D-V D curves can be obtained and the difference in length results in only a little change in I D-V D curves. For DG and WG devices, the qualitative results are similar. Compared to single gate device, the channel length can be scaled shorter before the significant loss of on-off current ratio occurs.Recent experiments studied the dependence of GNR channel resistivity on channel width [9, 10],which shows decreased resistivity with increased width. The scaling of channel width is achieved by changing the index N of the armchair edge GNR channel. Similar to the CNTs, there are semiconducting and metallic GNRs and only semiconducting ribbons are relevant here. In Fig. 7a, the I D-V G characteristics for different channel widths are plotted. As the channel width is increased, both the off current and on current increase. A GNR with a larger channel width has a smaller bandgap [7], which results in a smaller Schottky barrier height in our simulation and consequently both on and off currents are increased. There is a trade-off between on-off current ratio and on current. For a N=9 channel, the on-off current ratio is over 77 thousand while the on current is less than 1 μA. For a N=24 armchair edge ribbon channel, although the on current is 9.5 μA, the on-off current ratio is only 8.6, which is close to the recently demonstrated GNR filed-effect device [10]. But unlike the channel length scaling, where extremely short channel device with small on-off current ratiobehaves like a conductor, the wide channel device with small on-off current ratio has I D-V D characteristics with clear linear regime and saturation regime as shown Fig. 7b. Because the channel length here is 20 nm, the gate, therefore, has good electrostatic control over the channel potential profile, and direct tunneling from source to drain is negligible.The effect of gate oxide dielectric constant is explored. The subthreshold swing and transconductance versus gate oxide dielectric constant are shown in Fig. 8. The increase of gate oxide dielectric constant does not affect much the subthreshold swing and the transconductance. In this study, electrostatic potential in the channel region is carefully calculated by solving the Poisson equation with the Laplace solution combined with particular solution. The Laplace solution for the simulated devices is totally determined by the device geometry and boundary condition, whereas the particular solution is affected by the gate insulator capacitance with its thickness and dielectric constant. The effect of gate dielectric constant on total electrostatic potential is applicable only in the particular solution, but it does not affect much on total electrostatic potential since the magnitude of the particular solution is very small compared to Laplace solution at the quantum capacitance limit [19]. The subthreshold swing and the transconductance, therefore, do not change a lot in the simulated region.The scaling of the gate oxide thickness is studied next. Fig. 9 shows the subthreshold swing and transconductance versus the gate oxide thickness. The increase of the gate oxide thickness results in worse gate electrostatic control, and hence larger subthreshold swing. A thinner oxide, therefore, is desirable for a larger on-current (due to a larger transconductance) and a larger maximum on-off current ratio (due to a smallersubthreshold swing). As the oxide thickness increases, the role of gate geometry is more important. For example, g m of the WG GNRFET is about 55 % larger than that of a SG GNRFET for t ox=1 nm, but the improvement is 130 % at t ox=2.5 nm.Fig. 10 shows the I D-V G characteristics of GNR transistor with different Schottky barrier heights. As discussed above, at V D=0.5 V, the minimal leakage current occurs at V G=0.25 V for the Schottky barrier height equal to one half of the bandgap, and the I-V characteristic is ambipolar. Because the ambipolar characteristic increases the leakage current and is not preferred for CMOS applications, it is interesting to ask whether the ambipolar characteristic can be suppressed by designing the SB heights. For example, it could be expected that electron transport would be preferred when the SB height for electrons decreases, and the hole transport would be preferred if the SB height for electrons increases. The simulated I-V characteristics in Fig. 10, however, indicate that engineering the SB height does not change the qualitative ambipolar feature of the I-V characteristics when the gate oxide is thin. The reason is that the gate electrode can screen the field from the source and drain effectively for a thin gate oxide. The Schottky barrier, whose thickness is approximately the same as the gate insulator thickness [20], is nearly transparent. Engineering the SB height, therefore, has a small effect on the qualitative feature of the I D-V G characteristics. A similar phenomenon has been previously noticed and verified in CNT SBFETs.The effect of the size of source and drain contacts on transistor I-V is studied in Fig. 11. In Fig. 11a, it shows both off current and on current increase as the width of source/drain contact is decreased from 4.8 nm to 1.4 nm while the on-off current ratio keeps approximately constant. To understand the I D-V G curves, the conduction bandprofiles at on state (V D =0.5 V and V G =0.75 V) in transport direction are plotted in Fig. 11b. Because the simulation shows little potential variation in the transverse direction of the channel, the potential is obtained by averaging the potential of each atomistic site in the channel width direction. It clearly shows the thickness of Schottky barrier at source end is decreased when the width of contacts is decreased. This is due to the fact that scaling down the width of the contacts can decrease the fringe field from gate to source contact and the penetration length of source electrical field is decreased. The Fig. 11c and 11d show how the height of contacts affects the transistor’s I D -V G characteristics. It shows the same trend when the contact height is changed. The DG and WG transistors basically follow the same qualitative conclusions. Compared to the SG FET, the contact size has smaller effect on the DG and WG GNRFETs. Because the GNR channel is sandwiched or wrapped around by the gate, the field lines from the source and drain contacts are better screened by the gate electrodes, and hence the source and drain contact geometry has less impact. Generally, small size and low dimensional contacts not only improve the DC performance by increasing the on current, but also improve the AC performance by decreasing the parasitic capacitance between the electrodes, which leads to a higher operation speed.The intrinsic delay indicates how fast a transistor can switch. In Fig. 12, the intrinsic delays of a GNRFET and a Si MOSFET are compared. The intrinsic delay of the Si MOSFET is projected by ITRS to year 2015 and the gate length L g will be shrunk down to 10 nm [1]. The delay data () in the ITRS roadmap are computed using the total gate capacitance that includes the parasitic capacitance, as shown by the dashed line with circles in Fig. 12. In order to perform a fair comparison to the intrinsicI V C g /g Cdelay of the nominal SG GNRFETs (which does not include the parasitic capacitance), we also compute the intrinsic delay of Si MOSFETs by using the ideal gate capacitance values provided by the ITRS roadmap instead of the total gate capacitance values, as shown by the dashed line. The results indicate that the intrinsic delay of GNRFET is approximately a factor of 3.5 smaller than that of Si MOSFETs at L g=10 nm. The major reason is that the GNR has a larger band-structure limited velocity for the first subband, which dominantly contributes to the conduction in low voltage operation.IV. Conclusions and DiscussionsIn this work, a comprehensive study on the scaling characteristics of GNR SBFET is performed by solving quantum transport equation with self-consistent electrostatics. Due to the geometry of GNR, we solved Poisson equation for a 3D electrostatics. With possibly varying potential in the width direction of GNR channel, an atomistic tight binding Hamiltonian in real space representation is used in transport equation. Such approach can be readily extended to treat GNR channel with edge irregularity and defects where a mode space approach is not applicable.Because both GNR and CNT are one-dimensional nanostructures derived from graphene (with a bandgap created by quantum confinement in the width or circumferential direction), the scaling characteristics of GNR SBFETs show some similarities with CNT SBFETs. But the two types of transistors have some important difference. First, GNRFETs have different channel geometry leading to a different gate electrostatics. A precise patterning technique could potentially lead to better control of defining channel material than CNTFETs. Second, due to the different quantumconfinement in the transverse direction, an armchair edge GNR channel does not have valley degeneracy [11], which results in a smaller quantum capacitance. Compared to a CNT channel [21], it benefits even less from multiple gate structure. In addition, the edges of the GNR channel could potentially cause large potential variation in the transverse direction.The band gap of the GNR channel strongly depends on its width, which significantly affects the on current and off current. The ambipolar I-V characteristics can not be suppressed by engineering the Schottky barrier height when the gate insulator is thin (below about 10 nm). Reducing the gate insulator thickness and the contact size results in thinner Schottky barriers, and therefore, larger on current. The intrinsic speed of the GNRFETs is several times faster than Si FETs due to its large carrier velocity and near ballistic transport, and reducing parasitics is essential for benefiting from the fast intrinsic speed. As a new type of transistor, GNRFET, however, is still governed by transistor electrostatics and quantum effects, which imposes a similar ultimate scaling limit as for Si MOSFETs [22].AcknowledgementThe computational facility was made possible from the NSF Grant No. EIA-0224442, IBM SUR grants and gifts, and a DURIP Grant from Army Research Office.。