STP2N60中文资料

2n60场效应管启动电压引言场效应管（Field-Effect Transistor，简称FET）是一种用于放大和开关电路的半导体器件。

2n60场效应管是其中一种型号，启动电压是指在电路中使得场效应管开始工作所需的最低电压值。

本文将对2n60场效应管启动电压进行探讨。

什么是2n60场效应管2n60场效应管的基本原理2n60场效应管是一种N沟道增强型场效应管。

它由源极、漏极和栅极组成。

通过在栅极上施加电压，可以控制栅极与漏极之间的电流。

当栅极电压为零时，漏极电流非常小，处于截止状态；而当栅极电压为正时，漏极电流逐渐增大，处于饱和状态。

2n60场效应管的特性2n60场效应管具有以下特性： 1. 低输入电流：2n60场效应管的栅极电流非常小，可以减少功耗。

2. 高输入电阻：2n60场效应管的输入电阻较高，可以减少电路的负载效应。

3. 快速开关速度：2n60场效应管的开关速度较快，可以适用于高频电路。

2n60场效应管启动电压的影响因素2n60场效应管的启动电压受到多种因素的影响，包括： 1. 温度：温度的变化会对2n60场效应管的导通特性产生影响，从而影响启动电压。

2. 栅极电压：栅极电压的大小会直接影响2n60场效应管的导通能力，进而影响启动电压。

3. 漏极电流：漏极电流的大小也会影响2n60场效应管的导通特性，从而影响启动电压。

2n60场效应管启动电压的测量方法方法一：使用实验仪器测量可以使用数字万用表或示波器等实验仪器来测量2n60场效应管的启动电压。

具体步骤如下： 1. 将2n60场效应管正确连接到电路中。

2. 施加逐渐增大的栅极电压。

3. 当2n60场效应管开始导通时，记录此时的栅极电压，即为启动电压。

方法二：通过电路计算根据2n60场效应管的数据手册中给出的参数，可以通过电路计算来估算2n60场效应管的启动电压。

具体步骤如下： 1. 查阅2n60场效应管的数据手册，获取栅极-源极截止电压和栅极-源极饱和电压等参数。

2、性能指标
极限值：（除其他标注外Tamb= 25℃）
参数
符号
数值
单位
最大漏源电压 栅源电压 雪崩电流 最大持续漏电流 最大脉冲漏电流
VDSS
600
V
VGS
±30
V
IAR
2
A
ID
2
A
(注1)
IDM
8
A
雪崩能量（单脉冲）
(注2)
EAR
140
mJ
峰值二极管恢复dv/dt
(注3)
dv/dt
4.5
V/ns
最大耗散功率 工作结温/储存温度范围
7-1
2N60 产品资料
功率MOSEFT—2N60 2A，600V N沟道
2N60功率MOS场效应管采用先进的高压DMOS工艺技术。这种先进工艺使器件具有优良的特性，如极快 的开关速度，极低栅电荷，最小化的导通电阻以及极强的雪崩击穿特性。这种器件非常适合于高效开关电源， DC/DC转换器，PWM马达控制和桥式驱动电路等。
注释:
⑴ 重复范围: 脉冲宽度受结温限制
⑵ L = 64mH, IAS = 2A, VDD = 50V, RG = 25 Ω, 开始TJ = 25°C ⑶ ISD ≤ 2.4A, di/dt ≤200A/μs, VDD ≤ BVDSS, 开始 TJ = 25°C
⑷ 脉冲测试: 脉冲宽度<= 300us, 占空比<=2%
25 60 ns
20 50
下降时间
tf
25 60
栅电荷 栅-源电荷 栅-漏电荷
Qg VDS =480V；VGS =10V；ID=2.4A (注4, 注5)
9 11
1.6

UNISONIC TECHNOLOGIES CO., LTD2N60 Power MOSFET2 Amps, 600 Volts N-CHANNEL MOSFETDESCRIPTIONThe UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high ruggedavalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.FEATURES* R DS(ON) = 3.8Ω@V GS = 10V.* Ultra Low gate charge (typical 9.0nC)* Low reverse transfer capacitance (Crss = typical 5.0 pF) * Fast switching capability * Avalanche energy specified* Improved dv/dt capability, high ruggednessSYMBOL1.GateTO-2201TO-252TO-251111TO-220F*Pb-free plating product number: 2N60LORDERING INFORMATIONOrder Number Pin AssignmentNormal Lead Free Plating Package 1 2 3Packing2N60-TA3-T 2N60L-TA3-T TO-220 G D S Tube 2N60-TF3-T 2N60L-TF3-T TO-220F G D S Tube 2N60-TM3-T 2N60L-TM3-T TO-251 G D S Tube 2N60-TN3-R 2N60L-TN3-R TO-252 G D S Tape Reel 2N60-TN3-T 2N60L-TN3-T TO-252 G D S TubeNote: Pin Assignment: G: Gate D: Drain S: SourceABSOLUTE MAXIMUM RATINGS (T C = 25℃, unless otherwise specified)PARAMETER SYMBOL RATINGS UNITDrain-Source Voltage V DSS 600 V Gate-Source Voltage V GSS ±30 V Avalanche Current (Note 2) I AR 2.0 AT C = 25°C 2.0 ADrain Current ContinuousT C = 100°C I D 1.26 ADrain Current Pulsed (Note 2) I DP 8.0 ARepetitive(Note 2) E AR 4.5 mJAvalanche EnergySingle Pulse(Note 3) E AS 140 mJPeak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/nsT C = 25°C 45 WTotal Power Dissipation Derate above 25°C P D0.36 W/Junction Temperature T J +150 Storage Temperature T STG -55 ~ +150 Note:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature 3. L=64mH, I AS =2.0A, V DD =50V, R G =25 Ω, Starting T J = 25°C 4. I SD ≤ 2.4A, di/dt ≤ 200A/µs, V DD ≤ BV DSS , Starting T J = 25°CTHERMAL DATAPARAMETER PACKAGE SYMBOL RATINGS UNITTO-251 112 TO-252 112TO-220 54 Thermal Resistance Junction-Ambient TO-220F θJA54TO-251 12 TO-252 12TO-220 4 Thermal Resistance Junction-Case TO-220F θJc4/WELECTRICAL CHARACTERISTICS (T J =25℃, unless Otherwise specified.)PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITOff CharacteristicsDrain-Source Breakdown Voltage BV DSS V GS = 0V, I D = 250µA 600 VV DS = 600V, V GS = 0V 10 µAZero Gate Voltage Drain Current I DSSV DS = 480V, T C = 125°C100µA Forward V GS = 30V, V DS = 0V 100nAGate-Body Leakage Current Reverse I GSSV GS = -30V, V DS = 0V-100nA Breakdown Voltage Temperature Coefficient BV DSS /T J I D = 250 µA 0.4 V/On Characteristics Gate Threshold Voltage V GS(TH)V DS = V GS , I D = 250µA 2.0 4.0V Static Drain-Source On-Resistance R DS(ON)V GS = 10V, I D =1A 3.8 5 Ω Forward Transconductance g FS V DS = 50V, I D = 1A (Note 1) 2.25 S Dynamic Characteristics Input Capacitance C ISS 270 350pFOutput Capacitance C OSS 40 50 pFReverse Transfer Capacitance C RSS V DS =25V, V GS =0V, f =1MHz 5 7 pFELECTRICAL CHARACTERISTICS(Cont.)PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITSwitching Characteristics Turn-On Delay Time t D (ON) 10 30 ns Rise Time t R 25 60 ns Turn-Off Delay Time t D(OFF) 20 50 nsFall Time t FV DD =300V, I D =2.4A, R G =25Ω(Note 1,2) 25 60 ns Total Gate Charge Q G 9.0 11 nCGate-Source Charge Q GS 1.6 nCGate-Drain Charge Q GDV DS =480V, V GS =10V, I D =2.4A(Note 1, 2)4.3 nC Drain-Source Diode Characteristics Drain-Source Diode Forward Voltage V SD V GS = 0 V, I SD = 2.0 A 1.4V Continuous Drain-Source Current I SD 2.0 A Pulsed Drain-Source Current I SM 8.0 AReverse Recovery Time t RR 180 nsReverse Recovery Charge Q RR V GS = 0 V, I SD = 2.4A, di/dt = 100 A/µs (Note1) 0.72 µC Note: 1. Pulse Test: Pulse Width ≤300µs, Duty Cycle ≤2%2. Essentially Independent of Operating TemperatureTEST CIRCUITS AND WAVEFORMSV DDV GS (Driver)I SD (D.U.T.)Body DiodeForward Voltage DropV DS(D.U.T.)Fig. 1A Peak Diode Recovery dv/dt Test CircuitFig. 1B Peak Diode Recovery dv/dt WaveformsTEST CIRCUITS AND WAVEFORMS (Cont.)R LDDV DS90%10%V GStFig. 2A Switching Test Circuit Fig. 2B Switching WaveformsFig. 3A Gate Charge Test CircuitFig. 3B Gate Charge Waveform10VLV DDI ASFig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching WaveformsTYPICAL CHARACTERISTICS10010101010-1100Drain-Source Voltage , V DS (V)D r a i n C u r r e n t , I D (A )10102Gate-Source Voltage , V GS (V)D r a i n C u r r e n t , I D (A )Transfer Characteristics46810On-Region Characteristics0D r a i n -S o u r c e O n -R e s i s t a n c e , R D S (O N ) ()Drain Current , I D (A)122481012On-Resistance Variation vs . Drain Current andGate Voltage634560.2Source-Drain Voltage , V SD (V)Body Diode Forward Voltage Variation vs.Source Current and Temperature 1.60.40.60.8 1.0 1.2 1.4500010Drain -Source Voltage, V DS (V)C a p a c i t a n c e (p F )Capacitance vs. Drain-Source Voltage4001001001013002000G a t e -S o u r c e V o l t a g e , V G S (V )Total Gate Charge, Q G (nC)261081012Gate Charge vs. Gate Charge Voltage46408TYPICAL CHARACTERISTICS(Cont.)-100D r a i n -S o u r c e B r e a k d ow n V o l t a g e , V D S S (N o r m a l i z e d )Junction Temperature , T J (℃)-5050200100150Breakdown Voltage vs . Temperature 0-100D r a i n -S o u r c e O n -R e s i st a n c e , R D S (O N ) (N o r m a l i z e d )Junction Temperature , T J (℃)-5050200100150On-Resistance vs . Temperature101010Drain-Source Voltage , V DS (V)D r a i n C u r r e n t , I D (A )Max. Safe Operating Area 1010101010D r a i n C u r r e n t , I D (A )Case Temperature , T C (℃)75100150Max. Drain Current vs. Case Temperature 0.012550250.51.01.52.0Square Wave Pulse Duration , t1(s)T h e r m a l R e s p o n s e , J C (t )Thermal Response101010101010101010。

January 2011Doc ID 15853 Rev 41/23STB22NM60N, STF22NM60N, STI22NM60NSTP22NM60N, STW22NM60NN-channel 600 V , 0.2 Ω, 16 A MDmesh™ II Power MOSFETin D 2P AK, TO-220FP , I 2P AK, TO-220 and TO-247Features■100% avalanche tested■Low input capacitance and gate charge ■Low gate input resistanceApplicationSwitching applicationsDescriptionThese devices are made using the second generation of MDmesh™ technology. Thisrevolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.Order codes V DSS (@Tjmax)R DS(on) max.I D STB22NM60N 650 V < 0.22 Ω16 A STF22NM60N 650 V < 0.22 Ω16 A STI22NM60N 650 V < 0.22 Ω16 A STP22NM60N 650 V < 0.22 Ω16 A STW22NM60N650 V< 0.22 Ω16 ATable 1.Device summaryOrder codes MarkingPackage Packaging STB22NM60N 22NM60ND²P AK Tape and reelSTF22NM60N TO-220FPT ube STI22NM60N I²P AK STP22NM60N TO-220STW22NM60NTO-247Contents STB/F/I/P/W22NM60NContents1Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42.1Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 6Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 222/23 Doc ID 15853 Rev 4STB/F/I/P/W22NM60N Electrical ratingsDoc ID 15853 Rev 43/231 Electrical ratingsTable 2.Absolute maximum ratingsSymbolParameterValueUnitD²PAKI²PAKTO-220TO-247TO-220FPV GS Gate- source voltage± 30V I D Drain current (continuous) at T C = 25 °C 1616 (1)1.Limited only by maximum temperature allowed A I D Drain current (continuous) at T C = 100 °C 1010 (1)A I DM (2)2.Pulse width limited by safe operating areaDrain current (pulsed)6464 (1)A P TOT T otal dissipation at T C = 25 °C 12530W dv/dt (3)3.I SD ≤ 16 A, di/dt ≤ 400 A/µs, V DSpeak ≤ V (BR)DSS , V DD = 80% V (BR)DSSPeak diode recovery voltage slope15V/ns V ISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s;T C =25 °C)2500VT J T stgOperating junction temperature Storage temperature-55 to 150°CTable 3.Thermal dataSymbolParameterValueUnitD²PAK I²PAK TO-220TO-247TO-220FPR thj-case Thermal resistance junction-casemax.1 4.17°C/W R thj-amb Thermal resistance junction-ambient max.62.55062.5°C/W R thj-pcb (1)1.When mounted on 1inch² FR-4 board, 2 oz CuThermal resistance junction-pcb max.30°C/W T JMaximum lead temperature for soldering purpose300°C/WTable 4.Thermal dataSymbolParameterValue Unit I AR Avalanche current, repetitive or not-repetitive (pulse width limited by T J max)6A E ASSingle pulse avalanche energy(starting T J = 25 °C, I D = I AR , V DD = 50 V)300mJElectrical characteristics STB/F/I/P/W22NM60N4/23 Doc ID 15853 Rev 42 Electrical characteristics(Tcase = 25 °C unless otherwise specified)Table 5.On /off statesSymbol Parameter Test conditionsMin.Typ.Max.Unit V (BR)DSS Drain-sourcebreakdown voltageI D = 1 mA, V GS = 0600V I DSS Zero gate voltagedrain current (V GS = 0)V DS = Max rating V DS = Max rating, T C =125 °C 1100µA µA I GSS Gate-body leakage current (V DS = 0)V GS = ± 25 V100nA V GS(th)Gate threshold voltage V DS = V GS , I D = 250 µA 234V R DS(on)Static drain-source onresistanceV GS = 10 V , I D = 8 A0.20.22ΩTable 6.DynamicSymbol Parameter Test conditionsMin.Typ.Max.Unit C iss C oss C rss Input capacitance Output capacitance Reverse transfer capacitance V DS = 50 V , f = 1 MHz, V GS = 0-1330844.6-pF pF pF C oss eq.(1)1.C oss eq. is defined as a constant equivalent capacitance giving the same charging time as C oss when V DSincreases from 0 to 80% V DS .Output equivalent capacitanceV DS = 0 to 480 V , V GS = 0-181-pF R g Gate input resistance f=1 MHz open drain - 4.7-ΩQ g Q gs Q gdT otal gate charge Gate-source charge Gate-drain chargeV DD = 480 V , I D = 16 A,V GS = 10 V (see Figure 18)-44625-nC nC nCSTB/F/I/P/W22NM60N Electrical characteristicsDoc ID 15853 Rev 45/23Table 7.Switching timesSymbol ParameterTest conditions Min.Typ.Max Unitt d(on)t r(v)t d(off)t f(i)Turn-on delay time Voltage rise time Turn-off delay time Fall timeV DD = 300 V , I D = 8 A, R G = 4.7 Ω, V GS = 10 V (see Figure 17)-11187438-ns ns ns nsTable 8.Source drain diodeSymbol ParameterTest conditionsMin.Typ.Max Unit I SDI SDM (1)1.Pulse width limited by safe operating area Source-drain currentSource-drain current (pulsed)-1664A A V SD (2)2.Pulsed: pulse duration = 300 µs, duty cycle 1.5%Forward on voltage I SD = 16 A, V GS = 0- 1.6V t rr Q rr I RRM Reverse recovery time Reverse recovery charge Reverse recovery current I SD = 16 A, di/dt = 100 A/µs V DD = 60 V(see Figure 19)-296426.8ns µC A t rr Q rr I RRM Reverse recovery time Reverse recovery charge Reverse recovery currentI SD = 16 A, di/dt = 100 A/µs V DD = 60 V T J = 150 °C (see Figure 19)-3504.727ns µC AElectrical characteristics STB/F/I/P/W22NM60N6/23 Doc ID 15853 Rev 42.1 Electrical characteristics (curves)Figure 2.Safe operating area for TO-220,Figure 3.Thermal impedance for TO-220,STB/F/I/P/W22NM60N Electrical characteristicsDoc ID 15853 Rev 47/23Electrical characteristics STB/F/I/P/W22NM60N8/23 Doc ID 15853 Rev 4Figure 14.Normalized gate threshold voltageFigure 15.Normalized on resistance vsSTB/F/I/P/W22NM60N Test circuitsDoc ID 15853 Rev 49/233 Test circuitsFigure 17.Switching times test circuit forFigure 18.Gate charge test circuitFigure 19.Test circuit for inductive loadFigure 20.Unclamped inductive load testPackage mechanical data STB/F/I/P/W22NM60N 4 Package mechanical dataIn order to meet environmental requirements, ST offers these devices in different grades ofECOPACK® packages, depending on their level of environmental compliance. ECOPACK®specifications, grade definitions and product status are available at: . ECOPACKis an ST trademark.10/23 Doc ID 15853 Rev 4Table 9.TO-220FP mechanical datammDim.Min.Typ.Max.A 4.4 4.6B 2.5 2.7D 2.5 2.75E0.450.7F0.751F1 1.15 1.70F2 1.15 1.70G 4.95 5.2G1 2.4 2.7H1010.4L216L328.630.6L49.810.6L5 2.9 3.6L615.916.4L799.3Dia3 3.2Doc ID 15853 Rev 411/23Table 10.D²PAK (TO-263) mechanical datammDim.Min.Typ.Max.A 4.40 4.60A10.030.23b0.700.93b2 1.14 1.70c0.450.60c2 1.23 1.36D8.959.35D17.50E1010.40E18.50e 2.54e1 4.88 5.28H1515.85J1 2.49 2.69L 2.29 2.79L1 1.27 1.40L2 1.30 1.75R0.4V20°8°12/23 Doc ID 15853 Rev 4Doc ID 15853 Rev 413/23Table 11.TO-220 type A mechanical datammDim.Min.Typ.Max.A 4.40 4.60b0.610.88b1 1.14 1.70c0.480.70D15.2515.75D1 1.27E1010.40e 2.40 2.70e1 4.95 5.15F 1.23 1.32H1 6.20 6.60J1 2.40 2.72L1314L1 3.50 3.93L2016.40L3028.90∅P 3.75 3.85Q 2.65 2.95 14/23 Doc ID 15853 Rev 4Doc ID 15853 Rev 415/23Table 12.TO-247 mechanical datammDim.Min.Typ.Max.A 4.85 5.15A1 2.20 2.60b 1.0 1.40b1 2.0 2.40b2 3.0 3.40c0.400.80D19.8520.15E15.4515.75e 5.45L14.2014.80L1 3.70 4.30L218.50∅P 3.55 3.65∅R 4.50 5.50S 5.5016/23 Doc ID 15853 Rev 4Doc ID 15853 Rev 417/23Table 13.I²PAK (TO-262) mechanical datamm.DIM.min.typ max.A 4.40 4.60A1 2.40 2.72b0.610.88b1 1.14 1.70c0.490.70c2 1.23 1.32D8.959.35e 2.40 2.70e1 4.95 5.15E1010.40L1314L1 3.50 3.93L2 1.27 1.40 18/23 Doc ID 15853 Rev 4Doc ID 15853 Rev 419/2320/23 Doc ID 15853 Rev 45 Packaging mechanical data(a)Table 14.D²PAK (TO-263) tape and reel mechanical dataTapeReelDim.mmDim.mmMin.Max.Min.Max.A010.510.7A 330B015.715.9B 1.5D 1.5 1.6C 12.813.2D1 1.59 1.61D 20.2E 1.65 1.85G 24.426.4F 11.411.6N 100K0 4.8 5.0T30.4P0 3.9 4.1P111.912.1Base qty 1000P2 1.9 2.1Bulk qty1000R 50T 0.250.35W23.724.3a.All dimension are in millimetersSTB/F/I/P/W22NM60N Packaging mechanical data K0Doc ID 15853 Rev 421/23Revision history STB/F/I/P/W22NM60N22/23 Doc ID 15853 Rev 46 Revision historyTable 15.Document revision historyDate RevisionChanges02-Jul-20091First release.18-Feb-20102Document status promoted from preliminary data to datasheet.27-Aug-20103New package, mechanical data has been inserted: I²P AK.05-Nov-20114Some value changed in Table 5: On /off states .STB/F/I/P/W22NM60NPlease Read Carefully:Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice.All ST products are sold pursuant to ST’s terms and conditions of sale.Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein.No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein.UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST.ST and the ST logo are trademarks or registered trademarks of ST in various countries.Information in this document supersedes and replaces all information previously supplied.The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.© 2011 STMicroelectronics - All rights reservedSTMicroelectronics group of companiesAustralia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of AmericaDoc ID 15853 Rev 423/23。