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STP55NF06中文资料

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1/12March 2003.STB55NF06 STB55NF06-1STP55NF06 STP55NF06FPN-CHANNEL 60V - 0.015 Ω - 50A TO-220/TO-220FP/I ²PAK/D²PAKSTripFET™ II POWER MOSFETs TYPICAL R DS (on) = 0.015 Ωs EXCEPTIONAL dv/dt CAPABILITY s 100% AVALANCHE TESTEDsSURFACE-MOUNTING D 2PAK (TO-263)POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX “T4”)sTHROUGH-HOLE I²PAK (TO-262) POWER PACKAGE IN TUBE (SUFFIX “-1")DESCRIPTIONThis Power MOSFET is the latest development of ST-Microelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows ex-tremely high packing density for low on-resistance,rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufactur-ing reproducibility.APPLICATIONSs HIGH CURRENT, HIGH SWITCHING SPEED s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS s AUTOMOTIVETYPE V DSS R DS(on)I D STP55NF06STB55NF06-1STB55NF06STP55NF06FP60 V 60 V 60 V 60 V<0.018 Ω<0.018 Ω<0.018 Ω<0.018 Ω50 A 50 A 50 A 50 A(*)ABSOLUTE MAXIMUM RATINGSPulse width limited by safe operating area(*)Refer to soa for the max allowable current value on FP-type due to Rth valueSymbol ParameterValueUnit STP_B55NF06(-1)STP55NF06FPV DS Drain-source Voltage (V GS = 0)60V V DGR Drain-gate Voltage (R GS = 20 k Ω)60V V GS Gate- source Voltage± 20V I D Drain Current (continuous) at T C = 25°C 5050(*)A I D Drain Current (continuous) at T C = 100°C 3535(*)A I DM (•)Drain Current (pulsed)200200(*)A P tot Total Dissipation at T C = 25°C 11030W Derating Factor0.730.2W/°C dv/dt (1)Peak Diode Recovery voltage slope 7V/ns E AS (2)Single Pulse Avalanche Energy 350mJ T stg Storage Temperature-55 to 175°CT jOperating Junction Temperature(1) I SD ≤50A, di/dt ≤400A/µs, V DD ≤ V (BR)DSS , T j ≤ T JMAXT j = 25 o C, I D = 25A, V DD = 30V(2) StartingSTB50NF06 STB55NF06-1 STP55NF06 STP55NF06FP2/12THERMAL DATAELECTRICAL CHARACTERISTICS (T case = 25 °C unless otherwise specified)OFFON (*)DYNAMICI ²PAK D²PAK TO-220TO-220FPRthj-case Thermal Resistance Junction-caseMax 1.365°C/W Rthj-ambT lThermal Resistance Junction-ambientMaximum Lead Temperature For Soldering Purpose (1.6 mm from case, for 10 sec)Max62.5300°C/W °CSymbol ParameterTest ConditionsMin.Typ.Max.Unit V (BR)DSS Drain-sourceBreakdown Voltage I D = 250 µA, V GS = 060V I DSSZero Gate VoltageDrain Current (V GS = 0)V DS = Max RatingV DS = Max Rating T C = 125°C 110µA µA I GSSGate-body Leakage Current (V DS = 0)V GS = ± 20 V±100nASymbol ParameterTest ConditionsMin.Typ.Max.Unit V GS(th)Gate Threshold Voltage V DS = V GS I D = 250 µA 234V R DS(on)Static Drain-source On ResistanceV GS = 10 VI D = 27.5 A0.0150.018ΩSymbol ParameterTest ConditionsMin.Typ.Max.Unit g fs (*)Forward Transconductance V DS = 15 VI D =27.5 A18S C iss C oss C rssInput Capacitance Output Capacitance Reverse Transfer CapacitanceV DS = 25V, f = 1 MHz, V GS = 01530300105pF pF pF3/12STB50NF06 STB55NF06-1 STP55NF06 STP55NF06FPSWITCHING ONSWITCHING OFFSOURCE DRAIN DIODEPulsed: Pulse duration = 300 µs, duty cycle 1.5 %.(•)Pulse width limited by safe operating area.Symbol ParameterTest ConditionsMin.Typ.Max.Unit t d(on)t r Turn-on Delay Time Rise TimeV DD = 30 VI D = 27.5 A R G =4.7 Ω V GS = 10 V (Resistive Load, Figure 3)168ns ns Q g Qgs Q gdTotal Gate Charge Gate-Source Charge Gate-Drain ChargeV DD = 48 V I D = 55 A V GS = 10V44.510.517.560nC nC nCSymbol ParameterTest ConditionsMin.Typ.Max.Unit t d(off)t fTurn-off Delay Time Fall TimeV DD = 30VI D = 27.5 A R G =4.7Ω,V GS = 10 V (Resistive Load, Figure 3)3615ns nsSymbol ParameterTest ConditionsMin.Typ.Max.Unit I SD I SDM (•)Source-drain CurrentSource-drain Current (pulsed)50200A A V SD (*)Forward On Voltage I SD = 55AV GS = 01.5V t rr Q rr I RRMReverse Recovery Time Reverse Recovery Charge Reverse Recovery CurrentI SD = 55 Adi/dt = 100A/µs V DD = 30 V T j = 150°C (see test circuit, Figure 5)751704.5ns nC AELECTRICAL CHARACTERISTICS (continued)STB50NF06 STB55NF06-1 STP55NF06 STP55NF06FPSTB50NF06 STB55NF06-1 STP55NF06 STP55NF06FPSTB50NF06 STB55NF06-1 STP55NF06 STP55NF06FP6/12Fig. 3: Switching Times Test Circuits For ResistiveFig. 5: Test Circuit For Inductive Load Switching7/12STB50NF06 STB55NF06-1 STP55NF06 STP55NF06FP DIM.mm.inch.MIN.TYP. MAX.MIN.TYP. TYP .A 4.4 4.60.1730.181A1 2.49 2.690.0980.106A20.030.230.0010.009B 0.70.930.0280.037B2 1.14 1.70.0450.067C 0.450.60.0180.024C2 1.21 1.360.0480.054D 8.959.350.3520.368D180.315E 1010.40.3940.409E18.50.334G 4.88 5.280.1920.208L 1515.850.5910.624L2 1.27 1.40.0500.055L3 1.4 1.750.0550.069M 2.43.20.0940.126R 0.40.015V20°8°0°8°D 2PAK MECHANICAL DATA11/12STB50NF06 STB55NF06-1 STP55NF06 STP55NF06FPDIM.mm inchMIN.MAX.MIN.MAX.A010.510.70.4130.421B015.715.90.6180.626D 1.5 1.60.0590.063D1 1.59 1.610.0620.063E 1.65 1.850.0650.073F 11.411.60.4490.456K0 4.8 5.00.1890.197P0 3.9 4.10.1530.161P111.912.10.4680.476P2 1.9 2.100750.082R 50 1.574T 0.250.35.0.00980.0137W23.724.30.9330.956DIM.mm inchMIN.MAX.MIN.MAX.A 33012.992B 1.50.059C 12.813.20.5040.520D 20.20.795G 24.426.40.960 1.039N 1003.937T30.41.197BASE QTY BULK QTY 10001000REEL MECHANICAL DATA* on sales typeTUBE SHIPMENT (no suffix)*TAPE AND REEL SHIPMENT (suffix ”T4”)*D 2PAK FOOTPRINT TAPE MECHANICAL DATASTB50NF06 STB55NF06-1 STP55NF06 STP55NF06FPInformation furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.The ST logo is registered trademark of STMicroelectronics® 2003 STMicroelectronics - All Rights ReservedAll other names are the property of their respective owners.STMicroelectronics GROUP OF COMPANIESAustralia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.12/12。

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晶体管参数

晶体管参数

2SD718 NPN 80 10 120
2SB817 PNP 100 -12 -140
2SD1047 NPN 100 12 140
2SA1106 PNP 100 -10 -140
2SC2581 NPN 100 10 200
2SA1215 PNP 150 -4 -160
2SC2921 NPN 150 15 160
2SA1047 PNP -15 150 -160 -200
2SA1943 PNP -15 150 -230 -250
2SA1294 PNP -15 130 -230 -250
2SA1003 PNP -12 120 -150 -200
2SA1065 PNP -10 120 -150 -200
(A) (W) (V) (V)
3DF50C NPN 50 500 200 250
3DD5686 NPN 50 300 200 250
2SC1435 NPN 40 300 600 800-1200
2SC2445 NPN 30 250 300/200 400/300
DFP4N60 可替代型号：FQPF5N60C（SSS4N60B），2SK2750（2SK3567），IRFIBC40GLC，STP4NK60ZFP
DFF4N60 可替代型号：FQPF5N60C（SSS4N60B），2SK2750（2SK3567），IRFIBC40GLC，STP4NK60ZFP
TO-247AC 600V Warp 60-150kHz Discrete IGBT;100℃ 20A/600V
IRG4PF50W
TO-247AC 900V Warp 20-100kHz Discrete IGBT;100℃ 28A/900V
AN2526NFH资料

AN2526NFH资料

ICs for TV
AN2526NFH
Automotive LCD TV signal processor IC
I Overview
The AN2526NFH is a video signal processing IC with an LCD's 5 V-source driving power supply for TFT color LCD (normally white type), and it supports NTSC and PAL systems. The main circuitry of this IC includes videosignal processing circuit, color signal processing circuit, interface circuit, synchronizing circuit and many color quality adjusting circuits. This IC converts the composite video signal or separated Y/C signal or RGB signals into RGB signals available for TFT color LCD.
1 µF 5.1 kΩ NTSC 3.58 MHz PAL 4.43 MHz 0.1 µF
56
VXO
57
58
CLMP (BGP)
R-out
Trap
GND 3
59
GND1 21GBiblioteka mma4.7 µF60
YAP ctl.
VCC1
50 kB
R−Y out
61
20 19
2N5566中文资料

2N5566中文资料


Unit
V mA pA nA pA nA W V
mS mS mS
pF nV⁄ √Hz dB
mV mV/ _C
dB NCBD
8-2
Document Number: 70254 S-04031—Rev. D, 04-Jun-01
元器件交易网
2N5564/5565/5566
元器件交易网
2N5564/5565/5566
Vishay Siliconix
Matched N-Channel JFET Pairs
PRODUCT SUMMARY
Part Number
2N5564 2N5565 2N5566
VGS(off) (V)
–0.5 to –3 –0.5 to –3 –0.5 to –3
76
Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
b. Pulse test: PW v300 ms duty cycle v3%. c. This parameter not registered with JEDEC.
160
0 –10
rDS(on) – Drain-Source On-Resistance ( W )
120 VGS(off) = –2 V
80
40
gfs – Forward Transconductance (mS)
0 –55 –35 –15 5
APPLICATIONS
D Wideband Differential Amps D High-Speed,
MRF6S21060NBR1中文资料

MRF6S21060NBR1中文资料

RF Power Field Effect TransistorsN-Channel Enhancement-Mode Lateral MOSFETsDesigned for W-CDMA base station applications with frequencies from 2110to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-tions. To be used in Class AB for PCN-PCS/cellular radio and WLLapplications.•Typical 2-Carrier W-CDMA Performance: V DD = 28 Volts,I DQ = 610 mA, P out = 14 Watts Avg., Full Frequency Band, ChannelBandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.Power Gain — 15.5 dBDrain Efficiency — 26%IM3 @ 10 MHz Offset — -37 dBc in 3.84 MHz BandwidthACPR @ 5 MHz Offset — -40 dBc in 3.84 MHz Bandwidth•Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 60 Watts CWOutput PowerFeatures•Characterized with Series Equivalent Large-Signal Impedance Parameters•Internally Matched for Ease of Use•Qualified Up to a Maximum of 32 V DD Operation•Integrated ESD Protection•Designed for Lower Memory Effects and Wide Instantaneous BandwidthApplications•200_C Capable Plastic Package•N Suffix Indicates Lead-Free Terminations. RoHS Compliant.•In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.Table 1. Maximum RatingsRating Symbol Value Unit Drain-Source Voltage V DSS-0.5, +68Vdc Gate-Source Voltage V GS-0.5, +12Vdc Storage Temperature Range T stg-65 to +150°C Operating Junction Temperature T J200°C Table 2. Thermal CharacteristicsCharacteristic Symbol Value (1,2)Unit Thermal Resistance, Junction to CaseCase Temperature 79°C, 60 W CWCase Temperature 76°C, 14 W CWRθJC0.891.04°C/W1.MTTF calculator available at /rf. Select Tools/Software/Application Software/Calculators to accessthe MTTF calculators by product.2.Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to /rf.Select Documentation/Application Notes - AN1955.Document Number: MRF6S21060NRev. 3, 5/2006 Freescale SemiconductorTechnical Data2RF Device DataFreescale SemiconductorMRF6S21060NR1 MRF6S21060NBR1Table 3. ESD Protection CharacteristicsTest MethodologyClass Human Body Model (per JESD22-A114)1B (Minimum)Machine Model (per EIA/JESD22-A115) A (Minimum)Charge Device Model (per JESD22-C101)III (Minimum)Table 4. Moisture Sensitivity LevelTest MethodologyRating Package Peak TemperatureUnit Per JESD 22-A113, IPC/JEDEC J-STD-0203260°CTable 5. Electrical Characteristics (T C = 25°C unless otherwise noted)CharacteristicSymbolMinTypMaxUnitOff CharacteristicsZero Gate Voltage Drain Leakage Current (V DS = 68 Vdc, V GS = 0 Vdc)I DSS ——10μAdc Zero Gate Voltage Drain Leakage Current (V DS = 28 Vdc, V GS = 0 Vdc)I DSS ——1μAdc Gate-Source Leakage Current (V GS = 5 Vdc, V DS = 0 Vdc)I GSS——1μAdcOn Characteristics (DC)Gate Threshold Voltage(V DS = 10 Vdc, I D = 200 μAdc)V GS(th) 1.5 2.2 2.5Vdc Gate Quiescent Voltage(V DS = 28 Vdc, I D = 610 mAdc)V GS(Q)2 2.84Vdc Drain-Source On-Voltage(V GS = 10 Vdc, I D = 2.0 Adc)V DS(on)—0.3—VdcDynamic Characteristics (1)Reverse Transfer Capacitance(V DS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V GS = 0 Vdc)C rss—1.5—pFFunctional Tests (In Freescale Test Fixture, 50 ohm system) V DD = 28 Vdc, I DQ = 610 mA, P out = 14 W Avg., f1 = 2112.5 MHz,f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2-carrier W-CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01%Probability on CCDF.Power Gain G ps 13.515.516.5dB Drain EfficiencyηD 24.526—%Intermodulation Distortion IM3—-37-35dBc Adjacent Channel Power Ratio ACPR —-40-38dBc Input Return LossIRL—-14-10dB1.Part is internally matched both on input and output.MRF6S21060NR1 MRF6S21060NBR13RF Device DataFreescale SemiconductorFigure 1. MRF6S21060NR1(NBR1) Test Circuit SchematicZ100.270″ x 0.300″ Microstrip Z110.230″ x 0.080″ Microstrip Z120.310″ x 0.300″ Microstrip Z130.830″ x 0.080″ Microstrip Z140.200″ x 0.080″ Microstrip Z15 1.000″ x 0.080″ Microstrip Z16 1.100″ x 0.070″ Microstrip PCBArlon AD250, 0.030″, εr = 2.5Z10.250″ x 0.080″ Microstrip Z20.860″ x 0.080″ Microstrip Z30.300″ x 0.405″ Microstrip Z40.350″ x 0.080″ Microstrip Z50.350″ x 0.755″ Microstrip Z60.680″ x 0.080″ Microstrip Z70.115″ x 0.755″ Microstrip Z80.115″ x 1.000″ Microstrip Z90.240″ x 1.000″ MicrostripVTable 6. MRF6S21060NR1(NBR1) Test Circuit Component Designations and ValuesPartDescriptionPart NumberManufacturer C1100 nF Chip Capacitor CDR33BX104AKWS Kemet C2, C7 4.7 pF Chip Capacitors 100B4R7CW ATC C3, C8, C96.8 pF Chip Capacitors 100B6R8CWATC C4, C5, C6, C10, C1110 μF, 35 V Chip Capacitors GRM55DR61H106KA88LMurataR1 1 k W Chip Resistor R210 k W Chip Resistor R310 W Chip Resistor4RF Device DataFreescale SemiconductorMRF6S21060NR1 MRF6S21060NBR1Figure 2. MRF6S21060NR1(NBR1) Test Circuit Component LayoutMRF6S21060NR1 MRF6S21060NBR15RF Device DataFreescale SemiconductorTYPICAL CHARACTERISTICSFigure 5. Two-Tone Power Gain versusOutput Power10111P out , OUTPUT POWER (WATTS) PEP200G p s , P O W E R G A I N (d B )100Figure 6. Third Order Intermodulation Distortionversus Output Power110200P out , OUTPUT POWER (WATTS) PEP1006RF Device DataFreescale SemiconductorMRF6S21060NR1 MRF6S21060NBR1TYPICAL CHARACTERISTICS20010171P out , OUTPUT POWER (WATTS) CW10161412G p s , P O W E R G A I N (d B )151311Figure 10. Power Gain and Drain Efficiencyversus CW Output PowerFigure 11. Power Gain versus Output PowerP out , OUTPUT POWER (WATTS) CWI M D , I N T E R M O D U L A T I O N D I S T O R T I O N (d B c )12020406080100100MRF6S21060NR1 MRF6S21060NBR17RF Device DataFreescale SemiconductorTYPICAL CHARACTERISTICSW-CDMA TEST SIGNAL21010990T J , JUNCTION TEMPERATURE (°C)Figure 12. MTTF Factor versus Junction TemperatureThis above graph displays calculated MTTF in hours x ampere 2drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTTF factor by I D 2 for MTTF in a particular application.108107106120140160180190M T T F F A C T O R (H O U R S x A M P S 2)100110130150170200100.00011000PEAK−TO−AVERAGE (dB)Figure 13. CCDF W-CDMA 3GPP , Test Model 1, 64 DPCH, 67% Clipping, Single-Carrier Test Signal1010.10.010.0012468Figure 14. 2-Carrier W-CDMA Spectrumf, FREQUENCY (MHz)P R O B A B I L I T Y (%)(d B )2051510−5−10−15−20−25258RF Device DataFreescale SemiconductorMRF6S21060NR1 MRF6S21060NBR1f MHz Z sourceΩZ load Ω2110214021703.31 - j5.353.06 - j4.923.17 - j5.167.59 - j8.396.71 - j8.835.84 - j8.62V DD = 28 Vdc, I DQ = 610 mA, P out = 14 W Avg.Z o = 10 ΩZ loadZ sourceZ source =Test circuit impedance as measured fromgate to ground.Z load=Test circuit impedance as measured from drain to ground.ZsourceZloadOutput Matching NetworkFigure 15. Series Equivalent Source and Load Impedancef = 2170 MHzf = 2110 MHzf = 2110 MHzf = 2170 MHzMRF6S21060NR1 MRF6S21060NBR19RF Device DataFreescale SemiconductorNOTES10RF Device Data Freescale SemiconductorMRF6S21060NR1 MRF6S21060NBR1NOTESMRF6S21060NR1 MRF6S21060NBR111RF Device DataFreescale SemiconductorNOTES12RF Device Data Freescale SemiconductorMRF6S21060NR1 MRF6S21060NBR1PACKAGE DIMENSIONSBOTTOM VIEW TO-270 WB-4PLASTICMRF6S21060NR1MRF6S21060NR1 MRF6S21060NBR113RF Device DataFreescale Semiconductor14RF Device Data Freescale SemiconductorMRF6S21060NR1 MRF6S21060NBR1MRF6S21060NR1 MRF6S21060NBR115RF Device DataFreescale SemiconductorInformation in this document is provided solely to enable system and softwareimplementers to use Freescale Semiconductor products. There are no express orimplied copyright licenses granted hereunder to design or fabricate any integratedcircuits or integrated circuits based on the information in this document.Freescale Semiconductor reserves the right to make changes without further notice toany products herein. Freescale Semiconductor makes no warranty, representation orguarantee regarding the suitability of its products for any particular purpose, nor doesFreescale Semiconductor assume any liability arising out of the application or use ofany product or circuit, and specifically disclaims any and all liability, including withoutlimitation consequential or incidental damages. “Typical” parameters that may beprovided in Freescale Semiconductor data sheets and/or specifications can and dovary in different applications and actual performance may vary over time. All operatingparameters, including “Typicals”, must be validated for each customer application bycustomer’s technical experts. Freescale Semiconductor does not convey any licenseunder its patent rights nor the rights of others. Freescale Semiconductor products arenot designed, intended, or authorized for use as components in systems intended forsurgical implant into the body, or other applications intended to support or sustain life,or for any other application in which the failure of the Freescale Semiconductor productcould create a situation where personal injury or death may occur. Should Buyerpurchase or use Freescale Semiconductor products for any such unintended orunauthorized application, Buyer shall indemnify and hold Freescale Semiconductorand its officers, employees, subsidiaries, affiliates, and distributors harmless against allclaims, costs, damages, and expenses, and reasonable attorney fees arising out of,directly or indirectly, any claim of personal injury or death associated with suchunintended or unauthorized use, even if such claim alleges that FreescaleSemiconductor was negligent regarding the design or manufacture of the part.Freescale t and the Freescale logo are trademarks of Freescale Semiconductor, Inc.All other product or service names are the property of their respective owners.© Freescale Semiconductor, Inc. 2006. All rights reserved.How to Reach Us:Home Page:E-mail:support@USA/Europe or Locations Not Listed:Freescale SemiconductorTechnical Information Center, CH3701300 N. Alma School RoadChandler, Arizona 85224+1-800-521-6274 or +1-480-768-2130support@Europe, Middle East, and Africa:Freescale Halbleiter Deutschland GmbHTechnical Information CenterSchatzbogen 781829 Muenchen, Germany+44 1296 380 456 (English)+46 8 52200080 (English)+49 89 92103 559 (German)+33 1 69 35 48 48 (French)support@Japan:Freescale Semiconductor Japan Ltd.HeadquartersARCO Tower 15F1-8-1, Shimo-Meguro, Meguro-ku,Tokyo 153-0064Japan0120 191014 or +81 3 5437 9125support.japan@Asia/Pacific:Freescale Semiconductor Hong Kong Ltd.Technical Information Center2 Dai King StreetTai Po Industrial EstateTai Po, N.T., Hong Kong+800 2666 8080@For Literature Requests Only:Freescale Semiconductor Literature Distribution CenterP.O. Box 5405Denver, Colorado 802171-800-441-2447 or 303-675-2140Fax: 303-675-2150LDCForFreescaleSemiconductor@。