STP4NM60中文资料

®1/6Table 1: Main Product CharacteristicsI F(AV) 2 x 30 A V RRM 170 V T j 175 °C V F (max)0.76 VSTPS60170CHIGH VOLTAGE POWER SCHOTTKY RECTIFIERREV. 1September 2005FEATURES AND BENEFITS■High junction temperature capability ■Low leakage current■Good trade off between leakage current and forward voltage drop ■Low thermal resistance ■High frequency operation ■Avalanche specificationDESCRIPTIONDual center tab Schottky rectifier suited for High Frequency Switched Mode Power Supplies.Packaged in TO-220AB, this device is intended for use to enhance the reliability of the application.Table 2: Order CodePart Number Marking STPS60170CTSTPS60170CTTable 3: Absolute Ratings (limiting values, per diode)Symbol ParameterValue Unit V RRM Repetitive peak reverse voltage 170V I F(RMS)RMS forward current 60A I F(AV)Average forward currentT c = 150 °C δ = 0.5Per diode Per device3060A I FSM Surge non repetitive forward current t p = 10 ms sinusoidal 270A P ARM Repetitive peak avalanche power t p = 1 µs T j = 25 °C17300W T stg Storage temperature range-65 to + 175°C T j Maximum operating junction temperature *175°C dV/dtCritical rate of rise of reverse voltage10000V/µs* : thermal runaway condition for a diode on its own heatsink dPtot dTj---------------1Rth j a –()-------------------------<STPS60170C2/6Table 4: Thermal Parameters Table 5: Static Electrical Characteristics (per diode)Pulse test:* tp = 5 ms, δ < 2%** tp = 380 µs, δ < 2%To evaluate the conduction losses use the following equation: P = 0.60 x I F(AV) + 0.053 I F 2(RMS)Symbol ParameterValue Unit R th(j-c)Junction to casePer diode Total 1.00.7°C/WR th(c)Coupling0.4When the diodes 1 and 2 are used simultaneously:∆ Tj(diode 1) = P(diode 1) x R th(j-c)(Per diode) + P(diode 2) x R th(c)Symbol ParameterTests conditions Min.Typ Max.Unit I R *Reverse leakage currentT j = 25 °C V R = V RRM35µA T j = 125 °C 835mAV F **Forward voltage dropT j = 25 °CI F = 30 A0.94VT j = 125 °C 0.720.76T j = 25 °C I F = 60 A0.97 1.05T j = 125 °C0.860.92STPS60170C3/6Figure 1: Average forward power dissipation versus average forward current (per diode)Figure 2: Average forward current versus ambient temperature (δ = 0.5, per diode)Figure 3: Normalized avalanche power derating versus pulse durationFigure 4: Normalized avalanche power derating versus junction temperatureFigure 5: Non repetitive surge peak forward current versus overload duration (maximum values, per diode)Figure 6: Relative variation of thermal impedance junction to case versus pulse durationTd =t /Tt pTd =t /Tt ptTd =t /Tt pSTPS60170C4/6Figure 7: Reverse leakage current versus reverse voltage applied (typical values, per diode)Figure 8: Junction capacitance versus reverse voltage applied (typical values, per diode)Figure 9: Forward voltage drop versus forward current (per diode, low level)Figure 10: Forward voltage drop versus forward current (per diode, high level)STPS60170C5/6Figure 11: TO-220AB Package Mechanical DataIn order to meet environmental requirements, ST offers these devices in ECOPACK® packages. Thesepackages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: .Table 6: Ordering Information■Epoxy meets UL94, V0■Cooling method: by conduction (C)■Recommended torque value: 0.55 Nm.■Maximum torque value: 0.7 Nm.Ordering type Marking Package Weight Base qtyDelivery mode STPS60170CTSTPS60170CTTO-220AB2.20 g50TubeTable 7: Revision HistoryDate RevisionDescription of Changes16-Sep-20051First issue.STPS60170CInformation furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.The ST logo is a registered trademark of STMicroelectronics.All other names are the property of their respective owners© 2005 STMicroelectronics - All rights reservedSTMicroelectronics group of companiesAustralia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America6/6分销商库存信息: STMSTPS60170CT。

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Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode• 75% lower E off compared to previous generationcombined with low conduction losses• Short circuit withstand time – 10 µs • Designed for:- Motor controls - Inverter• NPT-Technology for 600V applications offers:- very tight parameter distribution- high ruggedness, temperature stable behaviour - parallel switching capability• Very soft, fast recovery anti-parallel EmCon diode• Complete product spectrum and PSpice Models : /igbt/Type V CE I C V CE(sat )T j Package Ordering Code SKP04N60600V4A2.3V150°CTO-220AB Q67040-S4216SKB04N60TO-263ABQ67040-S4229Maximum Ratings ParameterSymbol Value Unit Collector-emitter voltage V C E 600V DC collector current T C = 25°C T C = 100°CI C9.44.9Pulsed collector current, t p limited by T jmax I C p u l s 19Turn off safe operating area V CE ≤ 600V, T j ≤ 150°C -19Diode forward current T C = 25°C T C = 100°CI F104Diode pulsed current, t p limited by T jmax I F p u l s 19AGate-emitter voltage V G E ±20V Short circuit withstand time 1)V GE = 15V, V CC ≤ 600V, T j ≤ 150°Ct S C 10µs Power dissipation T C = 25°CP t o t50WOperating junction and storage temperatureT j , T s t g-55...+150°C1)Allowed number of short circuits: <1000; time between short circuits: >1s.P-TO-220-3-1(TO-220AB)P-TO-263-3-2 (D²-PAK)(TO-263AB)Thermal Resistance Parameter Symbol Conditions Max. ValueUnit CharacteristicIGBT thermal resistance,junction – caseR t h J C 2.5Diode thermal resistance,junction – case R t h J C D 4.5Thermal resistance,junction – ambientR t h J A TO-220AB 62SMD version, device on PCB1)R t h J ATO-263AB40K/WElectrical Characteristic, at T j = 25 °C, unless otherwise specified ValueParameterSymbol Conditionsmin.Typ.max.UnitStatic CharacteristicCollector-emitter breakdown voltage V (B R )C E S V G E =0V, I C =500µA 600--Collector-emitter saturation voltageV C E (s a t )V G E = 15V, I C =4A T j =25°C T j =150°C1.7-2.02.3 2.42.8Diode forward voltageV FV G E =0V, I F =4A T j =25°C T j =150°C1.2- 1.41.25 1.81.65Gate-emitter threshold voltage V G E (t h )I C =200µA,V C E =V G E 345VZero gate voltage collector currentI C E SV C E =600V,V G E =0V T j =25°C T j =150°C----20500µAGate-emitter leakage current I G E S V C E =0V,V G E =20V --100nA Transconductance g f s V C E =20V, I C =4A 3.1-S Dynamic Characteristic Input capacitance C i s s -264317Output capacitanceC o s s -2935Reverse transfer capacitance C r s s V C E =25V,V G E =0V,f =1MHz-1720pFGate chargeQ G a t e V C C =480V, I C =4A V G E =15V -2431nC Internal emitter inductancemeasured 5mm (0.197 in.) from case L E TO-220AB-7-nH Short circuit collector current2)I C (S C )V G E =15V,t S C ≤10µs V C C ≤ 600V,T j ≤ 150°C-40-A 1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm 2(one layer, 70µm thick) copper area for collector connection. PCB is vertical without blown air.2)Allowed number of short circuits: <1000; time between short circuits: >1s.Switching Characteristic, Inductive Load, at T j =25 °C ValueParameterSymbolConditionsmin.typ.max.UnitIGBT Characteristic Turn-on delay time t d (o n )-2226Rise timet r -1518Turn-off delay time t d (o f f )-237284Fall time t f -7084nsTurn-on energy E o n -0.0700.081Turn-off energy E o f f -0.0610.079Total switching energyE t sT j =25°C,V C C =400V,I C =4A,V G E =0/15V,R G =67Ω,L σ1)=180nH,C σ1)=180pFEnergy losses include “tail” and diode reverse recovery.-0.1310.160mJ Anti-Parallel Diode Characteristic Diode reverse recovery timet r r t S t F---18015165---nsDiode reverse recovery charge Q r r -130-nC Diode peak reverse recovery current I r r m - 2.5-A Diode peak rate of fall of reverse recovery current during t bdi r r /dtT j =25°C,V R =200V, I F =4A,di F /dt =200A/µs-180-A/µs Switching Characteristic, Inductive Load, at T j =150 °C ValueParameterSymbolConditionsmin.typ.max.UnitIGBT Characteristic Turn-on delay time t d (o n )-2226Rise timet r -1619Turn-off delay time t d (o f f )-264317Fall time t f -104125nsTurn-on energy E o n -0.1150.132Turn-off energy E o f f -0.1110.144Total switching energyE t sT j =150°CV C C =400V,I C =4A,V G E =0/15V,R G =67Ω,L σ1)=180nH,C σ1)=180pFEnergy losses include “tail” and diode reverse recovery.-0.2260.277mJ Anti-Parallel Diode Characteristic Diode reverse recovery timet r r t S t F---23023227---nsDiode reverse recovery charge Q r r -300-nC Diode peak reverse recovery current I r r m -4-A Diode peak rate of fall of reverse recovery current during t bdi r r /dtT j =150°C V R =200V, I F =4A,di F /dt =200A/µs-200-A/µs 1)Leakage inductance L σ and Stray capacity C σ due to dynamic test circuit in Figure E.I C , C O L L E C T O R C U R R E N T10Hz100Hz 1kHz 10kHz 100kHz0A 10A20AI C , C O L L E C T O R C U R R E N T1V10V100V1000V0.01A0.1A1A10Af , SWITCHING FREQUENCYV CE , COLLECTOR -EMITTER VOLTAGE Figure 1. Collector current as a function of switching frequency(T j ≤ 150°C, D = 0.5, V CE = 400V,V GE = 0/+15V, R G = 67Ω)Figure 2. Safe operating area (D = 0, T C = 25°C, T j ≤ 150°C)P t o t , P O W E R D I S S I P A T I O N25°C50°C 75°C 100°C 125°C0W 10W20W30W40W50W60WI C , C O L L E C T O R C U R R E N T25°C50°C 75°C 100°C 125°C0A2A4A6A8A10A12AT C , CASE TEMPERATURET C , CASE TEMPERATUREFigure 3. Power dissipation as a function of case temperature (T j ≤ 150°C)Figure 4. Collector current as a function of case temperature(V GE ≤ 15V, T j ≤ 150°C)I C , C O L L E C T O R C U R R E N T0V1V 2V 3V 4V 5V0A 3A 6A 9A12A 15AI C , C O L L E C T O R C U R R E N T0V1V 2V 3V 4V 5V0A 3A6A9A12A15AV CE , COLLECTOR -EMITTER VOLTAGEV CE , COLLECTOR -EMITTER VOLTAGEFigure 5. Typical output characteristics (T j = 25°C)Figure 6. Typical output characteristics (T j = 150°C)I C , C O L L E C T O R C U R R E N T0V2V 4V 6V 8V 10V0A 2A 4A 6A 8A 10A 12A14A V C E (s a t ), C O L L E C T O R -E M I T T E R S A T U R A T I O N V O L T A G E-50°C 0°C 50°C 100°C 150°C1.0V1.5V2.0V2.5V3.0V3.5V4.0VV GE , GATE -EMITTER VOLTAGET j , JUNCTION TEMPERATUREFigure 7. Typical transfer characteristics(V CE = 10V)Figure 8. Typical collector-emittersaturation voltage as a function of junction temperature (V GE = 15V)t , S W I T C H I N G T I M E S0A2A4A6A8A10A10ns100nst , S W I T C H I N G T I M E S0Ω50Ω100Ω150Ω200Ω10ns 100nsI C , COLLECTOR CURRENTR G , GATE RESISTORFigure 9. Typical switching times as a function of collector current(inductive load, T j = 150°C, V CE = 400V,V GE = 0/+15V, R G = 67Ω,Dynamic test circuit in Figure E)Figure 10. Typical switching times as a function of gate resistor(inductive load, T j = 150°C, V CE = 400V,V GE = 0/+15V, I C = 4A,Dynamic test circuit in Figure E)t , S W I T C H I N G T I M E S0°C50°C100°C150°C10ns100nsV G E (t h ), G A T E -E M I T T E R T H R E S H O L D V O L T A G E-50°C0°C50°C100°C150°C 2.0V2.5V3.0V 3.5V4.0V 4.5V5.0V 5.5VT j , JUNCTION TEMPERATURET j , JUNCTION TEMPERATUREFigure 11. Typical switching times as a function of junction temperature(inductive load, V CE = 400V, V GE = 0/+15V,I C = 4A, R G = 67Ω,Dynamic test circuit in Figure E)Figure 12. Gate-emitter threshold voltage as a function of junction temperature (I C = 0.2mA)E , S W I T C H I N G E N E R G Y L O S S E S0A2A 4A 6A 8A 10A0.0mJ0.1mJ0.2mJ0.3mJ0.4mJ0.5mJ0.6mJE , SW I T C H I N G E N E R G Y L O S S E S0Ω50Ω100Ω150Ω200Ω0.0mJ0.1mJ0.2mJ0.3mJ0.4mJI C , COLLECTOR CURRENTR G , GATE RESISTORFigure 13. Typical switching energy losses as a function of collector current(inductive load, T j = 150°C, V CE = 400V,V GE = 0/+15V, R G = 67Ω,Dynamic test circuit in Figure E)Figure 14. Typical switching energy losses as a function of gate resistor(inductive load, T j = 150°C, V CE = 400V,V GE = 0/+15V, I C = 4A,Dynamic test circuit in Figure E)E ,S W I T C H I N G E N E R G Y L O S S E S0°C50°C 100°C 150°C0.0mJ0.1mJ0.2mJ0.3mJZ t h J C , T R A N S I E N T T H E R M A L I M P E D A N C E1µs10µs 100µs 1ms 10ms 100ms 1s10-310-210-1100T j , JUNCTION TEMPERATUREt p , PULSE WIDTHFigure 15. Typical switching energy losses as a function of junction temperature (inductive load, V CE = 400V, V GE = 0/+15V,I C = 4A, R G = 67Ω,Dynamic test circuit in Figure E)Figure 16. IGBT transient thermalimpedance as a function of pulse width (D = t p / T )V G E , G A T E -E M I T T E R V O L T A G E0nC10nC 20nC 30nC 0V 5V10V15V20V25VC , C A P A C I T A N C E0V 10V 20V 30V10pF100pFQ GE , GATE CHARGEV CE , COLLECTOR -EMITTER VOLTAGE Figure 17. Typical gate charge (I C = 4A)Figure 18. Typical capacitance as a function of collector-emitter voltage (V GE = 0V, f = 1MHz)t s c , S H O R T C I R C U I T W I T H S T A N D T I M E10V11V12V13V14V15V0µs 5µs10µs15µs20µs25µs I C (s c ), S H O R T C I R C U I T C O L L E C T O R C U R R E N T10V12V 14V 16V 18V20V0A 10A 20A 30A 40A 50A 60A 70AV GE , GATE -EMITTER VOLTAGEV GE , GATE -EMITTER VOLTAGEFigure 19. Short circuit withstand time as a function of gate-emitter voltage (V CE = 600V, start at T j = 25°C)Figure 20. Typical short circuit collector current as a function of gate-emitter voltage (V CE ≤ 600V, T j = 150°C)t r r , R E V E R S E R E C O V E R Y T I M E40A/µs120A/µs 200A/µs 280A/µs 360A/µs0ns100ns200ns300ns400ns500nsQ r r , R E V E R S E R E C O V E R Y C H A R G E40A/µs120A/µs 200A/µs 280A/µs 360A/µs0nC80nC160nC240nC320nC400nC480nC560nCdi F /dt , DIODE CURRENT SLOPEdi F /dt , DIODE CURRENT SLOPEFigure 21. Typical reverse recovery time as a function of diode current slope (V R = 200V, T j = 125°C,Dynamic test circuit in Figure E)Figure 22. Typical reverse recovery charge as a function of diode current slope (V R = 200V, T j = 125°C,Dynamic test circuit in Figure E)I r r , R E V E R S E R E C O V E R Y C U R R E N T40A/µs120A/µs 200A/µs 280A/µs360A/µs0A2A4A6A8Ad i r r /d t , D I O D E P E A K R A T E O F F A L LO F R E V E R S E R E C O V E R Y C U R R E N T40A/µs120A/µs 200A/µs 280A/µs 360A/µs0A/µs80A/µs160A/µs240A/µs320A/µs400A/µsdi F /dt , DIODE CURRENT SLOPEdi F /dt , DIODE CURRENT SLOPEFigure 23. Typical reverse recovery current as a function of diode current slope (V R = 200V, T j = 125°C,Dynamic test circuit in Figure E)Figure 24. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (V R = 200V, T j = 125°C,Dynamic test circuit in Figure E)I F , F O R W A R D C U R R E N T0.0V0.5V 1.0V 1.5V 2.0V0A 2A4A6A8AV F , F O R W A R D V O L T A G E-40°C 0°C 40°C 80°C 120°C1.0V1.5V2.0VV F , FORWARD VOLTAGET j , JUNCTION TEMPERATUREFigure 25. Typical diode forward current as a function of forward voltage Figure 26. Typical diode forward voltage as a function of junction temperatureZ t h J C D , T R A N S I E N T T H E R M A L I M P E D A N C E1µs10µs 100µs 1ms 10ms 100ms 1s10-210-1100t p , PULSE WIDTHFigure 27. Diode transient thermalimpedance as a function of pulse width (D = t p / T )dimensionssymbol[mm][inch]minmax minmax A 9.7010.300.38190.4055B 14.8815.950.58580.6280C 0.650.860.02560.0339D 3.55 3.890.13980.1531E 2.60 3.000.10240.1181F 6.00 6.800.23620.2677G 13.0014.000.51180.5512H 4.35 4.750.17130.1870K 0.380.650.01500.0256L 0.951.320.03740.0520M 2.54 typ.0.1 typ.N 4.30 4.500.16930.1772P 1.17 1.400.04610.0551T2.302.720.09060.1071TO-220ABdimensionssymbol[mm][inch]minmax minmax A 9.8010.200.38580.4016B 0.70 1.300.02760.0512C 1.00 1.600.03940.0630D 1.03 1.070.04060.0421E 2.54 typ.0.1 typ.F 0.650.850.02560.0335G 5.08 typ.0.2 typ.H 4.30 4.500.16930.1772K 1.17 1.370.04610.0539L 9.059.450.35630.3720M 2.30 2.500.09060.0984N 15 typ.0.5906 typ.P 0.000.200.00000.0079Q 4.20 5.200.16540.2047R 8° max 8° maxS 2.40 3.000.09450.1181T 0.400.600.01570.0236U 10.800.4252V 1.150.0453W 6.230.2453X 4.600.1811Y 9.400.3701TO-263AB (D 2Pak)Z16.150.6358Figure A. Definition of switching times Figure B. Definition of switching lossesIr r m90% Ir r m10% Ir r mdi/dtFtr rIFi,vtQSQFtStFVRdi/dtr rQ=Q Qr r S F+t=t tr r S F+Figure C. Definition of diodesswitching characteristicsτ1τ2nτr r rFigure D. Thermal equivalentcircuitFigure E. Dynamic test circuitLeakage inductance Lσ=180nHand Stray capacity Cσ=180pF.Published byInfineon Technologies AG,Bereich KommunikationSt.-Martin-Strasse 53,D-81541 München© Infineon Technologies AG 2000All Rights Reserved.Attention please!The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved.We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein.Infineon Technologies is an approved CECC manufacturer.InformationFor further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list).WarningsDue to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office.Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.。

40n60场效应管参数（实用版）目录1.40n60 场效应管的基本概念2.40n60 场效应管的主要参数3.40n60 场效应管参数的测量方法4.40n60 场效应管的应用领域正文一、40n60 场效应管的基本概念40n60 场效应管是一种双极型场效应管，其中的数字“40”和“60”分别代表了该场效应管的尺寸参数，即宽度与长度。

40n60 场效应管属于N 沟道型场效应管，通常用于放大和开关电信号。

它具有高输入电阻、低噪声和低功耗等特点，在电路设计中有着广泛的应用。

二、40n60 场效应管的主要参数1.漏极电流（ID）：指在特定的电压下，从漏极流向源极的电流。

2.源极电流（IS）：指在特定的电压下，从源极流向漏极的电流。

3.栅极电流（IG）：指在特定的电压下，从栅极流入或流出的电流。

4.跨导（Gm）：表示栅极电流变化引起的漏极电流变化的比例，用来衡量场效应管的放大能力。

5.输出电阻（RO）：指在源极开路时，从漏极到源极的电阻。

6.输入电阻（Ri）：指在栅极开路时，从源极到漏极的电阻。

三、40n60 场效应管参数的测量方法1.使用万用表进行测量：将万用表调整至场效应管测量档位，根据显示屏上的数据读取漏极电流、源极电流和栅极电流等参数。

2.使用示波器进行测量：将示波器连接到场效应管的各个端口，通过观察波形和测量幅度，获取场效应管的跨导、输出电阻和输入电阻等参数。

四、40n60 场效应管的应用领域1.电子放大器：40n60 场效应管在电子放大器中具有广泛应用，可以实现对信号的放大和传输。

2.模拟开关：40n60 场效应管的高输入电阻和低噪声特性使其成为模拟开关的理想选择。

3.电源开关：在电源开关应用中，40n60 场效应管可以实现高效、低功耗的信号控制。

4.传感器信号处理：在传感器信号处理领域，40n60 场效应管可以用于信号放大和滤波等功能。

总之，40n60 场效应管作为一种常用的半导体器件，具有优越的性能和广泛的应用领域。