STP36NF06中文资料

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1/9October 2003STP36NF06STP36NF06FPN-CHANNEL 60V - 0.032 Ω - 30A TO-220/TO-220FPSTripFET™ II POWER MOSFETs TYPICAL R DS (on) = 0.032 Ωs EXCEPTIONAL dv/dt CAPABILITY s 100% AVALANCHE TESTED sAPPLICATION ORIENTED CHARACTERIZATIONDESCRIPTIONThis Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™"strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.APPLICATIONSs HIGH CURRENT, HIGH SWITCHING SPEEDTYPE V DSS R DS(on)I D STP36NF06STP36NF06FP60 V 60 V<0.040 Ω<0.040 Ω30 A 18 A (*)Ordering InformationABSOLUTE MAXIMUM RATINGSPulse width limited by safe operating area.(*) Current Limited by Package(1) I SD ≤36A, di/dt ≤400A/µs, V DD ≤ V (BR)DSS , T j ≤ T JMAX (2) Starting T j = 25 o C, I D = 18 A, V DD = 45VSALES TYPEMARKING PACKAGE PACKAGINGSTP36NF06STP36NF06TO-220TUBE STP36NF06FPSTP36NF06FPTO-220FPTUBESymbol ParameterValueUnit STP36NF06STP36NF06FP V DS Drain-source Voltage (V GS = 0)60V V DGR Drain-gate Voltage (R GS = 20 k Ω)60V V GS Gate- source Voltage± 20V I D Drain Current (continuous) at T C = 25°C 3018(*)A I D Drain Current (continuous) at T C = 100°C 2112A I DM (•)Drain Current (pulsed)12072A P tot Total Dissipation at T C = 25°C 7025W Derating Factor0.470.17W/°C dv/dt (1)Peak Diode Recovery voltage slope 20V/ns E AS (2)Single Pulse Avalanche Energy 200mJ T stg Storage Temperature-55 to 175°CT jMax. Operating Junction TemperatureSTP36NF06 STP36NF06FP2/9THERMAL DATAELECTRICAL CHARACTERISTICS (T case = 25 °C unless otherwise specified)OFFON (*)DYNAMICTO-220TO-220FPRthj-case Thermal Resistance Junction-caseMax 2.146°C/W Rthj-ambT lThermal Resistance Junction-ambientMaximum Lead Temperature For Soldering Purpose (1.6 mm from case, for 10 sec)Max62.5300°C/W °CSymbol ParameterTest ConditionsMin.Typ.Max.Unit V (BR)DSS Drain-sourceBreakdown Voltage I D = 250 µA, V GS = 060V I DSSZero Gate VoltageDrain Current (V GS = 0)V DS = Max RatingV DS = Max Rating T C = 125°C 110µA µA I GSSGate-body Leakage Current (V DS = 0)V GS = ± 20 V±100nASymbol ParameterTest ConditionsMin.Typ.Max.Unit V GS(th)Gate Threshold Voltage V DS = V GS I D = 250 µA 2V R DS(on)Static Drain-source On ResistanceV GS = 10 VI D = 15 A0.0320.040ΩSymbol ParameterTest ConditionsMin.Typ.Max.Unit g fs (*)Forward Transconductance V DS = 25 VI D =15 A12S C iss C oss C rssInput Capacitance Output Capacitance Reverse Transfer CapacitanceV DS = 25V f = 1 MHz V GS = 069017068pF pF pF3/9STP36NF06 STP36NF06FPSWITCHING ONSWITCHING OFFSOURCE DRAIN DIODE(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.(•)Pulse width limited by safe operating area.Symbol ParameterTest ConditionsMin.Typ.Max.Unit t d(on)t r Turn-on Delay Time Rise TimeV DD = 30 VI D = 18 A R G =4.7 Ω V GS = 10 V (Resistive Load, Figure 3)1040ns ns Q g Q gs Q gdTotal Gate Charge Gate-Source Charge Gate-Drain ChargeV DD = 30 V I D = 36 A V GS = 10V236931nC nC nCSymbol ParameterTest ConditionsMin.Typ.Max.Unit t d(off)t fTurn-off Delay Time Fall TimeV DD = 30 VI D = 18 A R G =4.7 Ω VGS =10 V (Resistive Load, Figure 3)279ns nsSymbol ParameterTest ConditionsMin.Typ.Max.Unit I SD I SDM (•)Source-drain CurrentSource-drain Current (pulsed)30120A A V SD (*)Forward On Voltage I SD = 30 AV GS = 01.5V t rr Q rr I RRMReverse Recovery Time Reverse Recovery Charge Reverse Recovery CurrentI SD = 30 Adi/dt = 100A/µs V DD = 30 V T j = 150°C (see test circuit, Figure 5)651554.8ns nC AELECTRICAL CHARACTERISTICS (continued)STP36NF06 STP36NF06FPSTP36NF06 STP36NF06FPSTP36NF06 STP36NF06FP6/9Fig. 3: Switching Times Test Circuits For ResistiveFig. 5: Test Circuit For Inductive Load SwitchingSTP36NF06 STP36NF06FP8/9DIM.mm.inch.MIN.TYP. MAX.MIN.TYP. TYP .A 4.4 4.60.1730.181C 1.23 1.320.0480.051D 2.40 2.720.0940.107E 0.490.700.0190.027F 0.610.880.0240.034F1 1.14 1.700.0440.067F2 1.14 1.700.0440.067G 4.95 5.150.1940.203G1 2.40 2.700.0940.106H21010.400.3930.409L216.400.645L328.901.137L413140.5110.551L5 2.65 2.950.1040.116L615.2515.750.6000.620L7 6.20 6.600.2440.260L9 3.50 3.930.1370.154DIA3.753.850.1470.151TO-220 MECHANICAL DATASTP36NF06 STP36NF06FP Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is grantedby implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are notauthorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.The ST logo is registered trademark of STMicroelectronicsAll other names are the property of their respective owners.® 2003 STMicroelectronics - All Rights ReservedSTMicroelectronics GROUP OF COMPANIESAustralia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco -Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.9/9。