长电开关二极管SOD-323封装规格书

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate DiodesBAV16WS/1N4148WS FAST SWITCHING DIODEFEATURESMARKING: T6, T4Maximum Ratings and Electrical Characteristics, Single Diode @T a =25℃Parameter SymbolLimitUnitNon-Repetitive Peak R everse V oltage V RM 100 V Peak Repetitive Peak R everse V oltage Working Peak Reverse Voltage DC Blocking Voltage V RRM V RWM V R100 VRMS Reverse Voltage V R(RMS) 71 VForward Continuous Current I FM 300mA Average Rectified Output Current I O 150 mA Peak F orward S urge C urrent @t =1.0μs@t =1.0s I FSM2.0 1.0APower DissipationPd 200 mW Thermal Resistance Junction to AmbientR θJA625 ℃/WJunction T emperature T j 150 Storage T emperatureT STG -55~+150℃ Electrical Ratings @T a =25℃ParameterSymbol MinTypMaxUnit Conditions V F1 0.715V I F =1mA V F2 0.855VI F =10mA V F3 1.0 V I F =50mA Forward voltageV F4 1.25 VI F =150mAI R1 1 μA V R =75V Reverse currentI R2 25 nA V R =20V Capacitance between terminals C T2 pF V R =0V,f=1MHz Reverse r ecovery t imet rr4 ns I F =I R =10mA Irr=0.1XI R ,R L =100ΩSOD-323℃2550751001251500.010.111010051015200.81.01.2Reverse CharacteristicsAMBIENT TEMPERATURE T a ()℃1N4148WSTypical CharacteristicsF O R W A R D C U R R E N T I F (m A )REVERSE VOLTAGE V R(V)C A P A C I T A N C E B E T W E E N T E R M I N A L S C T (p F )JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes1N4448WS FAST SWITCHING DIODEFEATURES z Fast Switching Speed z Surface Mount Package Ideally Suited for Automatic Insertion z For General Purpose Switching Applications z High ConductanceMARKING: T5Maximum Ratings and Electrical Characteristics, Single Diode @T a =25℃Parameter SymbolLimitUnitNon-Repetitive Peak R everse V oltage V RM 100 V Peak Repetitive Peak R everse V oltage Working Peak Reverse Voltage DC Blocking Voltage V RRM V RWM V R75 VRMS Reverse Voltage V R(RMS) 53VForward Continuous Current I FM 500 mAAverage Rectified Output Current I O 250 mA Peak F orward S urge C urrent @t =1.0μs @t =1.0s I FSM4.0 1.5APower DissipationPd 200 mW Thermal Resistance Junction to AmbientR θJA 625 ℃/WStorage T emperature T STG -55~+150 ℃Electrical Ratings @T a =25℃ParameterSymbol MinTypMaxUnitConditionsReverse b reakdown v oltage V (BR)75 V I R =10μA V F1 0.62 0.72 VI F =5mA V F2 0.855VI F =10mA V F3 1.0 V I F =100mA Forward voltageV F4 1.25 VI F =150mAI R1 2.5 μA V R =75V Reverse currentI R2 25 nA V R =20V Capacitance between terminals C T4 pF V R =0V,f=1MHzReverse r ecovery t imet rr4 ns I F =I R =10mA0.60.81.01.21.41.60.1110100REVERSE VOLTAGE V R (V)C A P A C I T A N C E B E T W E E N T E R M I N A L S C T (p F )AMBIENT TEMPERATURE T a ()℃0.3330300F O R W A R D C U R R E N T I F (m A )1N4448WSTypical CharacteristicsJIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes1SS355 FAST SWITCHING DIODEFEATURES1) Small surface mounting type 2) High speed3) High reliability with high surge current handling capabilityMARKING: AMaximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃Parameter SymbolLimitUnitNon-repetitive peak reverse voltage V RM 90 VDC blocking voltage V R 80 V Peak forword currentI FM 225 mAAverage rectified output current I O 100mA Surge current (@t=1s) I surge 500 mA Junction temperature Tj 150 ℃ Storage temperatureT STG -55~+150 ℃Electrical Ratings @T a =25℃ParameterSymbol MinTypMaxUnitConditions Forward voltage V F1.2 V I F =100mA Reverse currentI R0.1 µA V R =80VCapacitance between terminalsC T3 pF V R =0.5V,f=1MHz Reverse r ecovery t ime t rr4 ns I F =10mA ,V R =6V,R L =100Ω2550751001251500.010.111010051015200.81.01.2AMBIENT TEMPERATURE Ta ()℃ 1SS355Typical CharacteristicsF O R W A R D C U R R E N T I F (m A )REVERSE VOLTAGE V R(V)C A P A C I T A N C E B E T W E E N T E R M I N A L S C T (p F )A,Jun,2012JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate DiodesBAS16WX HIGH-SPEED SWITCHING DIODEFEATURES z Fast Switching Speedz For General Purpose Switching Applications z High ConductanceMARKING: T4MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )Symbol Parameter Value Unit V RM Non-Repetitive Peak Reverse Voltage 85VV RRM V RWM Peak Repetitive Reverse Voltage Working Peak Reverse Voltage 75 VV R(RMS)RMS Reverse Voltage 53 V I OForward Current100mAP D Power Dissipation 200 mW R θjA Thermal Resistance from Junction to Ambient 625 ℃/W T JJunction Temperature150℃ T stg Storage Temperature-55~+150℃ELECTRICAL CHARACTERISTICS(T a =25℃ unless otherwise specified)Parameter Symbol Test conditions Min Typ Max UnitReverse voltageV (BR)I R =10μA 75 VI F =1mA 0.715I F =10mA0.855I F =50mA 1 Forward voltageV FI F =150mA1.25VReverse current I R V R =75V 1 μA Total capacitance C tot V R =0V,f =1MHz 2 pFReverse recovery timet rrI F = I R =10mA, I rr =0.1×I R,R L =100Ω6 nsJIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate DiodesBAS316 SWITCHING DIODEFEATURES● Very Small Plastic Package ● High Switching Speed APPLICATIONS● High-Speed Switching in e.g. Surface Mounted CircuitsMARKING: A6·MAXIMUM RATINGS ( T a =25℃ unless otherwise noted )Symbol ParameterValue Unit V RRM Peak Repetitive Reverse Voltage 85 V R DC Blocking Voltage 75 V I O Continuous Forward Current 250 mA P D Power Dissipation250 mW R θJA Thermal Resistance from Junction to Ambient 500 ℃/W T j Junction Temperature 150 ℃ T stgStorage Temperature-55~+150℃ELECTRICAL CHARACTERISTICS(Ta =25℃ unless otherwise specified)ParameterSymbol Test conditionsMin Typ Max Unit Reverse voltage V (BR) I R =100μA 100 V V R =25V 30 nA Reverse currentI RV R =75V 1 μAI F =1mA0.715 I F =10mA 0.855 I F =50mA 1 Forward voltageV FI F =150mA1.25 V Total capacitance C tot V R =0V,f=1MHz 1.5 pF Reverse recovery time t rrI F = I R =10mA, I rr =0.1×I R4nsSOD-3232550751001251500501001502002503000.00.20.40.60.81.01.220406080110100100010000Power Derating CurveP O W E R D I S S I P A T I O N P D (m W )AMBIENT TEMPERATURE T a ()℃BAS316Typical CharacteristicsF O R W A R D C U R R E N T I F (m A )FORWARD VOLTAGE V F (V)R E V E R S E C U R R E N T I R (n A )REVERSE VOLTAGE V R (V)REVERSE VOLTAGE V R(V)C A P A C I T A N C E B E T W E E N T E R M I N A L S C T (p F )JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTDSOD-323 Plastic-Encapsulate DiodesBAV19WS~BAV21WS SWITCHING DIODEFEATURESz Low Reverse Currentz Surface Mount Package Ideally Suited for Automatic Insertionz Fast Switching Speedz For General Purpose Switching ApplicationsMARKING:BAV19WS: A8BAV20WS: T2BAV21WS: T3MAXIMUM RATINGS ( T a=25℃unless otherwise noted )Value Symbol ParameterBAV19WS BAV20WS BAV21WSUnit V RM Non-Repetitive Peak Reverse Voltage 120 200 250 VV RRM Peak Repetitive Reverse Voltage V RWM Working Peak Reverse Voltage 100 150 200VV R(RMS)RMS Reverse Voltage 71 106 141 VI O Average Rectified Output Current 200 mAI FSM Non-repetitive Peak Forward Surge Current @ t=8.3ms 1.7 AP D Power Dissipation 250 mWRΘJA Thermal Resistance from Junction to Ambient 500 ℃/WT j Junction Temperature 150 ℃T stg Storage Temperature -55~+150 ℃ELECTRICAL CHARACTERISTICS(T a=25℃unless otherwise specified)Parameter Symbol Testconditions MinTyp Max UnitV R=100V BAV19WS0.1V R=150V BAV20WS0.1Reverse current I RV R=200V BAV21WS0.1uAI F=100mA1Forward voltage V FI F=200mA1.25VTotal capacitance C tot V R=0V,f=1MHz5 pF Reverse recovery time t rr I F= I R =30mA, I rr=0.1*I R50 ns25507510012515011010051015200.40.60.81.01.21.4Forward CharacteristicsReverse CharacteristicsAMBIENT TEMPERATURE Ta ()℃400BAV19WSTypical Characteristics303F O R W A R D C U R R E N T I F (m A )REVERSE VOLTAGE V R(V)C A P A C I T A N C E B E T W E E N T E R M I N A L S C T (p F )B,Sep,2013。