UN9111资料

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1Transistors with built-in Resistor

UN9111/9112/9113/9114/9115/9116/9117/9118/9119/9110/

911D/911E/911F/911H/911L/UNR911AJ/911BJ/911CJ

Silicon PNP epitaxial planer transistor

For digital circuits

sFeatures

qCosts can be reduced through downsizing of the equipment and

reduction of the number of parts.

qSS-Mini type package, allowing automatic insertion through tape

packing and magazine packing.

sResistance by Part Number

Marking Symbol(R

1)(R

2)

qUN91116A10kΩ10kΩ

qUN91126B22kΩ22kΩ

qUN91136C47kΩ47kΩ

qUN91146D10kΩ47kΩ

qUN91156E10kΩ—

qUN91166F4.7kΩ—

qUN91176H22kΩ—

qUN91186I0.51kΩ5.1kΩ

qUN91196K1kΩ10kΩ

qUN91106L47kΩ—

qUN911D6M47kΩ10kΩ

qUN911E6N47kΩ22kΩ

qUN911F6O4.7kΩ10kΩ

qUN911H6P2.2kΩ10kΩ

qUN911L6Q4.7kΩ4.7kΩ

qUNR911AJ6X100kΩ100kΩ

qUNR911BJ6Y100kΩ—

qUNR911CJ6Z—47kΩ

sAbsolute Maximum Ratings (Ta=25˚C)Unit: mm

Internal ConnectionParameterSymbolRatingsUnit

Collector to base voltageVCBO–50V

Collector to emitter voltageV

CEO–50V

Collector currentIC–100mA

Total power dissipationPT125mW

Junction temperatureT

j125˚C

Storage temperatureTstg–55 to +125˚CBC

R1

R2

E1 : Base

2 : Emitter

3 : Collector

SS–Mini Type Pakage1.6±0.15

1.6±0.1

1.0±0.1

0.75±0.15

0.45±0.10.5

0.3

0 to 0.10.50.8±0.10.40.4

0.2+0.1

-0.05

0.15+0.1

-0.051

23

0.2±0.1

Unit: mm

1 : Base

2 : Emitter

3 : Collector

SS–Mini Flat Type Pakage (J type)1.60+0.05

–0.03

0.70+0.05

–0.03

0.12+0.03

–0.01

0 to 0.10.800.80

0.50

0.501.60±0.05

0.80±0.050.80

0.4250.425

1.00±0.05

0.27±0.02

0.85+0.05–0.03元器件交易网www.cecb2b.com2Transistors with built-in Resistor

sElectrical Characteristics (Ta=25˚C)

ParameterSymbolConditionsmintypmaxUnit

Collector cutoff currentICBOVCB = –50V, IE = 0– 0.1µA

I

CEOV

CE = –50V, I

B = 0– 0.5µA

UN9111– 0.5

UN9112/9114/911E/911D– 0.2

UN9113/UNR911AJ– 0.1

UN9115/9116/9117/9110/UNR911BJIEBOVEB = –6V, IC = 0– 0.01mA

UN911F/911H–1.0

UN9119–1.5

UN9118/911L/911CJ–2.0

Collector to base voltageVCBOIC = –10µA, IE = 0–50V

Collector to emitter voltageV

CEOI

C = –2mA, I

B = 0–50V

UN911135

UN9112/911E60

UN9113/9114/UNR911AJ/911CJ

hFEVCE = –10V, IC = –5mA80

UN9115*/9116*/9117*/9110*UNR911BJ160460

UN911F/911D/9119/911H30

UN9118/911L20

Collector to emitter saturation voltageVCE(sat)IC = –10mA, IB = – 0.3mA– 0.25V

Output voltage high levelVOHVCC = –5V, VB = – 0.5V, RL = 1kΩ–4.9V

Output voltage low levelV

CC = –5V, V

B = –2.5V, R

L = 1kΩ– 0.2

UN9113/UNR911BJVCC = –5V, VB = –3.5V, RL = 1kΩ– 0.2

UN911DV

OLV

CC = –5V, V

B = –10V, R

L = 1kΩ– 0.2V

UN911EVCC = –5V, VB = –6V, RL = 1kΩ– 0.2

UNR911AJVCC = –5V, VB = –5.0V, RL = 1kΩ– 0.2

Transition frequency150

UNR911AJfTVCB = –10V, IE = 2mA, f = 200MHz

80MHz

UN9111/9114/911510

UN9112/911722

UN9113/9110/911D/911E47

UN9116/911F/911L

R1(–30%)4.7

(+30%)kΩ

UN91180.51

UN91191

UN911H2.2

UNR911AJ/911BJ100Emitter

cutoff

current

Forward

current

transfer

ratio

Input

resis-

tanceUN9111/9112/9113/9114/9115/9116/9117/9118/9119/9110/

911D/911E/911F/911H/911L/UNR911AJ/911BJ/911CJ

* h

FE rank classification (UN9115/9116/9117/9110)

RankQRS

h

FE160 to 260210 to 340290 to 460元器件交易网www.cecb2b.com3Transistors with built-in ResistorUN9111/9112/9113/9114/9115/9116/9117/9118/9119/9110/

911D/911E/911F/911H/911L/UNR911AJ/911BJ/911CJ

sElectrical Characteristics (continued) (Ta=25˚C)

ParameterSymbolConditionsmintypmaxUnit

UN9111/9112/9113/911L0.81.01.2

UN91140.170.210.25

UN9118/91190.080.10.12

UN911D

R1/R24.7

UN911E2.14

UN911F0.47

UN911H0.170.220.27

UNR911AJ1.0

Resistance between Emitter to BaseUNR911CJR2–30%4730%Resis-

tance

ratio元器件交易网www.cecb2b.com4Transistors with built-in Resistor

Common characteristics chart

P

T — Ta

Characteristics charts of UN9111

I

C — V

CEV

CE(sat) — I

Ch

FE — I

C

C

ob — V

CBI

O — V

INV

IN — I

OUN9111/9112/9113/9114/9115/9116/9117/9118/9119/9110/

911D/911E/911F/911H/911L/UNR911AJ/911BJ/911CJ

0

0–12–2–10–4–8–6–40–120

–80–160

–140

–100

–60

–20

Collector to emitter voltage VCE (V)Collector current IC (mA)Ta=25˚C

IB=–1.0mA

–0.9mA

–0.8mA

–0.7mA

–0.6mA

–0.5mA

–0.4mA

–0.3mA

–0.2mA

–0.1mA

–0.01–0.03

–0.1–0.3–0.1–0.3–1–3–10–30–100

–1–3–10–30–100

Collector current IC (mA)Collector to emitter saturation voltage VCE(sat) (V)IC/IB=10

Ta=75˚C

25˚C

–25˚C

0

–1–34080120160

–10–30–100–300–1000Forward current transfer ratio hFE

Collector current IC (mA)VCE=–10VTa=75˚C

25˚C

–25˚C

0

–0.1–0.36

5

4

3

2

1

–1–3–10–30–100Collector output capacitance Cob (pF)

Collector to base voltage VCB (V)f=1MHz

IE=0

Ta=25˚C

–1–3

–0.4–10–30–100–300–1000–3000–10000

–1.4–1.2–1.0–0.8–0.6Output current IO (µA)

Input voltage VIN (V)VO=–5V

Ta=25˚C

–0.01–0.03

–0.1–0.3–0.1–0.3–1–3–10–30–100

–1–3–10–30–100Input voltage VIN (V)

Output current IO (mA)VO=–0.2V

Ta=25˚C0

016020601001404012080150

125

100

75

50

25

Ambient temperature Ta (˚C)Total power dissipation PT (mW)元器件交易网www.cecb2b.com