UN9111资料
- 格式:pdf
- 大小:192.29 KB
- 文档页数:14
1Transistors with built-in Resistor
UN9111/9112/9113/9114/9115/9116/9117/9118/9119/9110/
911D/911E/911F/911H/911L/UNR911AJ/911BJ/911CJ
Silicon PNP epitaxial planer transistor
For digital circuits
sFeatures
qCosts can be reduced through downsizing of the equipment and
reduction of the number of parts.
qSS-Mini type package, allowing automatic insertion through tape
packing and magazine packing.
sResistance by Part Number
Marking Symbol(R
1)(R
2)
qUN91116A10kΩ10kΩ
qUN91126B22kΩ22kΩ
qUN91136C47kΩ47kΩ
qUN91146D10kΩ47kΩ
qUN91156E10kΩ—
qUN91166F4.7kΩ—
qUN91176H22kΩ—
qUN91186I0.51kΩ5.1kΩ
qUN91196K1kΩ10kΩ
qUN91106L47kΩ—
qUN911D6M47kΩ10kΩ
qUN911E6N47kΩ22kΩ
qUN911F6O4.7kΩ10kΩ
qUN911H6P2.2kΩ10kΩ
qUN911L6Q4.7kΩ4.7kΩ
qUNR911AJ6X100kΩ100kΩ
qUNR911BJ6Y100kΩ—
qUNR911CJ6Z—47kΩ
sAbsolute Maximum Ratings (Ta=25˚C)Unit: mm
Internal ConnectionParameterSymbolRatingsUnit
Collector to base voltageVCBO–50V
Collector to emitter voltageV
CEO–50V
Collector currentIC–100mA
Total power dissipationPT125mW
Junction temperatureT
j125˚C
Storage temperatureTstg–55 to +125˚CBC
R1
R2
E1 : Base
2 : Emitter
3 : Collector
SS–Mini Type Pakage1.6±0.15
1.6±0.1
1.0±0.1
0.75±0.15
0.45±0.10.5
0.3
0 to 0.10.50.8±0.10.40.4
0.2+0.1
-0.05
0.15+0.1
-0.051
23
0.2±0.1
Unit: mm
1 : Base
2 : Emitter
3 : Collector
SS–Mini Flat Type Pakage (J type)1.60+0.05
–0.03
0.70+0.05
–0.03
0.12+0.03
–0.01
0 to 0.10.800.80
0.50
0.501.60±0.05
0.80±0.050.80
0.4250.425
1.00±0.05
0.27±0.02
0.85+0.05–0.03元器件交易网www.cecb2b.com2Transistors with built-in Resistor
sElectrical Characteristics (Ta=25˚C)
ParameterSymbolConditionsmintypmaxUnit
Collector cutoff currentICBOVCB = –50V, IE = 0– 0.1µA
I
CEOV
CE = –50V, I
B = 0– 0.5µA
UN9111– 0.5
UN9112/9114/911E/911D– 0.2
UN9113/UNR911AJ– 0.1
UN9115/9116/9117/9110/UNR911BJIEBOVEB = –6V, IC = 0– 0.01mA
UN911F/911H–1.0
UN9119–1.5
UN9118/911L/911CJ–2.0
Collector to base voltageVCBOIC = –10µA, IE = 0–50V
Collector to emitter voltageV
CEOI
C = –2mA, I
B = 0–50V
UN911135
UN9112/911E60
UN9113/9114/UNR911AJ/911CJ
hFEVCE = –10V, IC = –5mA80
UN9115*/9116*/9117*/9110*UNR911BJ160460
UN911F/911D/9119/911H30
UN9118/911L20
Collector to emitter saturation voltageVCE(sat)IC = –10mA, IB = – 0.3mA– 0.25V
Output voltage high levelVOHVCC = –5V, VB = – 0.5V, RL = 1kΩ–4.9V
Output voltage low levelV
CC = –5V, V
B = –2.5V, R
L = 1kΩ– 0.2
UN9113/UNR911BJVCC = –5V, VB = –3.5V, RL = 1kΩ– 0.2
UN911DV
OLV
CC = –5V, V
B = –10V, R
L = 1kΩ– 0.2V
UN911EVCC = –5V, VB = –6V, RL = 1kΩ– 0.2
UNR911AJVCC = –5V, VB = –5.0V, RL = 1kΩ– 0.2
Transition frequency150
UNR911AJfTVCB = –10V, IE = 2mA, f = 200MHz
80MHz
UN9111/9114/911510
UN9112/911722
UN9113/9110/911D/911E47
UN9116/911F/911L
R1(–30%)4.7
(+30%)kΩ
UN91180.51
UN91191
UN911H2.2
UNR911AJ/911BJ100Emitter
cutoff
current
Forward
current
transfer
ratio
Input
resis-
tanceUN9111/9112/9113/9114/9115/9116/9117/9118/9119/9110/
911D/911E/911F/911H/911L/UNR911AJ/911BJ/911CJ
* h
FE rank classification (UN9115/9116/9117/9110)
RankQRS
h
FE160 to 260210 to 340290 to 460元器件交易网www.cecb2b.com3Transistors with built-in ResistorUN9111/9112/9113/9114/9115/9116/9117/9118/9119/9110/
911D/911E/911F/911H/911L/UNR911AJ/911BJ/911CJ
sElectrical Characteristics (continued) (Ta=25˚C)
ParameterSymbolConditionsmintypmaxUnit
UN9111/9112/9113/911L0.81.01.2
UN91140.170.210.25
UN9118/91190.080.10.12
UN911D
R1/R24.7
UN911E2.14
UN911F0.47
UN911H0.170.220.27
UNR911AJ1.0
Resistance between Emitter to BaseUNR911CJR2–30%4730%Resis-
tance
ratio元器件交易网www.cecb2b.com4Transistors with built-in Resistor
Common characteristics chart
P
T — Ta
Characteristics charts of UN9111
I
C — V
CEV
CE(sat) — I
Ch
FE — I
C
C
ob — V
CBI
O — V
INV
IN — I
OUN9111/9112/9113/9114/9115/9116/9117/9118/9119/9110/
911D/911E/911F/911H/911L/UNR911AJ/911BJ/911CJ
0
0–12–2–10–4–8–6–40–120
–80–160
–140
–100
–60
–20
Collector to emitter voltage VCE (V)Collector current IC (mA)Ta=25˚C
IB=–1.0mA
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–0.4mA
–0.3mA
–0.2mA
–0.1mA
–0.01–0.03
–0.1–0.3–0.1–0.3–1–3–10–30–100
–1–3–10–30–100
Collector current IC (mA)Collector to emitter saturation voltage VCE(sat) (V)IC/IB=10
Ta=75˚C
25˚C
–25˚C
0
–1–34080120160
–10–30–100–300–1000Forward current transfer ratio hFE
Collector current IC (mA)VCE=–10VTa=75˚C
25˚C
–25˚C
0
–0.1–0.36
5
4
3
2
1
–1–3–10–30–100Collector output capacitance Cob (pF)
Collector to base voltage VCB (V)f=1MHz
IE=0
Ta=25˚C
–1–3
–0.4–10–30–100–300–1000–3000–10000
–1.4–1.2–1.0–0.8–0.6Output current IO (µA)
Input voltage VIN (V)VO=–5V
Ta=25˚C
–0.01–0.03
–0.1–0.3–0.1–0.3–1–3–10–30–100
–1–3–10–30–100Input voltage VIN (V)
Output current IO (mA)VO=–0.2V
Ta=25˚C0
016020601001404012080150
125
100
75
50
25
Ambient temperature Ta (˚C)Total power dissipation PT (mW)元器件交易网www.cecb2b.com