当前位置：文档之家 › UN5114资料

UN5114资料

  • 格式：pdf
  • 大小：239.76 KB
  • 文档页数：17

1Transistors with built-in ResistorUN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/511D/511E/511F/511H/511L/511M/511N/511T/511V/511ZSilicon PNP epitaxial planer transistorFor digital circuitssFeaturesqCosts can be reduced through downsizing of the equipment andreduction of the number of parts.qS-Mini type package, allowing automatic insertion through tapepacking and magazine packing.sResistance by Part NumberMarking Symbol(R1)(R2)qUN51116A10kΩ10kΩqUN51126B22kΩ22kΩqUN51136C47kΩ47kΩqUN51146D10kΩ47kΩqUN51156E10kΩ—qUN51166F4.7kΩ—qUN51176H22kΩ—qUN51186I0.51Ω5.1kΩqUN51196K1kΩ10kΩqUN51106L47kΩ—qUN511D6M47kΩ10kΩqUN511E6N47kΩ22kΩqUN511F6O4.7kΩ10kΩqUN511H6P2.2kΩ10kΩqUN511L6Q4.7kΩ4.7kΩqUN511MEI2.2kΩ47kΩqUN511NEW4.7kΩ47kΩqUN511TEY22kΩ47kΩqUN511VFC2.2kΩ2.2kΩqUN511ZFE4.7kΩ22kΩsAbsolute Maximum Ratings (Ta=25˚C)1 : Base2 : EmitterEIAJ : SC–703 : CollectorS–Mini Type PackageUnit: mm

Internal Connection

ParameterSymbolRatingsUnitCollector to base voltageVCBO–50VCollector to emitter voltageVCEO–50VCollector currentIC–100mATotal power dissipationPT150mWJunction temperatureTj150˚CStorage temperatureTstg–55 to +150˚C2.1±0.1

1.3±0.1

0.9±0.10.7±0.10.3+0.1-0

0.15+0.1 -0.052.0±0.21.25±0.10.4250.4251320.65

0.20.65

0 to 0.10.2±0.1

BCR1R2E元器件交易网www.cecb2b.com2Transistors with built-in ResistorUN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/511D/511E/511F/511H/511L/511M/511N/511T/511V/511ZsElectrical Characteristics (Ta=25˚C)ParameterSymbolConditionsmintypmaxUnitCollector cutoff currentICBOVCB = –50V, IE = 0– 0.1µAICEOVCE = –50V, IB = 0– 0.5µAUN5111– 0.5UN5112/5114/511E/511D/511M/511N/511T– 0.2UN5113– 0.1UN5115/5116/5117/5110IEBOVEB = –6V, IC = 0– 0.01mAUN511F/511H–1.0UN5119–1.5UN5118/511L/511V–2.0UN511Z– 0.4Collector to base voltageVCBOIC = –10µA, IE = 0–50VUN511N/511T/511V/511Z–50Collector to emitter voltageVCEOIC = –2mA, IB = 0–50VUN511N/511T–50UN511135UN5112/511E60UN5113/5114/511M80UN5115*/5116*/5117*/5110*160460UN511F/511D/5119/511HhFEVCE = –10V, IC = –5mA30UN5118/511L20UN511N/511T80400UN511V620UN511Z60200Collector to emitter saturation voltageVCE(sat)IC = –10mA, IB = – 0.3mA– 0.25VUN511VIC = –10mA, IB = –1.5mA– 0.25Output voltage high levelVOHVCC = –5V, VB = – 0.5V, RL = 1kΩ–4.9 VOutput voltage low levelVCC = –5V, VB = –2.5V, RL = 1kΩ– 0.2UN5113VOLVCC = –5V, VB = –3.5V, RL = 1kΩ– 0.2VUN511DVCC = –5V, VB = –10V, RL = 1kΩ– 0.2UN511EVCC = –5V, VB = –6V, RL = 1kΩ– 0.2Transition frequencyfTVCB = –10V, IE = 1mA, f = 200MHz80MHzUN511ZVCB = –10V, IE = 1mA, f = 200MHz150UN5111/5114/511510UN5112/5117/511T22UN5113/5110/511D/511E47UN5116/511F/511L/511N/511ZR1(–30%)4.7(+30%)kΩUN51180.51UN51191UN511H/511M/511V2.2Emittercutoffcurrent

Forwardcurrenttransferratio

Inputresis-tance

* hFE rank classification (UN5115/5116/5117/5110)RankQRShFE160 to 260210 to 340290 to 460元器件交易网www.cecb2b.com3Transistors with built-in ResistorUN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/511D/511E/511F/511H/511L/511M/511N/511T/511V/511ZsElectrical Characteristics (continued) (Ta=25˚C)ParameterSymbolConditionsmintypmaxUnitUN5111/5112/5113/511L0.81.01.2UN51140.170.210.25UN5118/51190.080.10.12UN511D4.7UN511E2.14UN511F/511TR1/R20.47UN511H0.170.220.27UN511M0.047UN511N0.1UN511V1.0UN511Z0.21Resis-tanceratio元器件交易网www.cecb2b.com4Transistors with built-in ResistorCommon characteristics chartPT — Ta

Characteristics charts of UN5111IC — VCEVCE(sat) — IChFE — IC

Cob — VCBIO — VINVIN — IO00–12–2–10–4–8–6–40–120–80–160–140–100–60–20Collector to emitter voltage VCE (V)Collector current IC (mA)Ta=25˚CIB=–1.0mA–0.9mA–0.8mA–0.7mA–0.6mA–0.5mA–0.4mA–0.3mA–0.2mA–0.1mA–0.01–0.03–0.1–0.3–0.1–0.3–1–3–10–30–100

–1–3–10–30–100Collector current IC (mA)Collector to emitter saturation voltage VCE(sat) (V)IC/IB=10

Ta=75˚C25˚C–25˚C0–1–34080120160

–10–30–100–300–1000Forward current transfer ratio hFE

Collector current IC (mA)VCE=–10VTa=75˚C25˚C–25˚C

0–0.1–0.3654321–1–3–10–30–100Collector output capacitance Cob (pF)

Collector to base voltage VCB (V)f=1MHzIE=0Ta=25˚C

–1–3–0.4–10–30–100–300–1000–3000–10000

–1.4–1.2–1.0–0.8–0.6Output current IO (µA)

Input voltage VIN (V)VO=–5VTa=25˚C

–0.01–0.03–0.1–0.3–0.1–0.3–1–3–10–30–100

–1–3–10–30–100Input voltage VIN (V)

Output current IO (mA)VO=–0.2VTa=25˚C0016040120802402001601208040Ambient temperature Ta (˚C)Total power dissipation PT (mW)UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z元器件交易网www.cecb2b.com5Transistors with built-in ResistorCharacteristics charts of UN5112IC — VCEVCE(sat) — IChFE — IC

Cob — VCBIO — VINVIN — IO

Characteristics charts of UN5113IC — VCEVCE(sat) — IChFE — ICUN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z

合集下载

UN9211中文资料

UN9211中文资料

1Transistors with built-in ResistorUN9211/9212/9213/9214/9215/9216/9217/9218/9219/9210/921D/921E/921F/921K/921L/UNR921M/921N/921AJ/921BJ/921CJ

Silicon NPN epitaxial planer transistor

For digital circuits

sFeaturesqCosts can be reduced through downsizing of the equipment andreduction of the number of parts.qSS-Mini type package, allowing automatic insertion through tapepacking and magazine packing.

sResistance by Part NumberMarking Symbol(R1)(R2)qUN92118A10kΩ10kΩqUN92128B22kΩ22kΩqUN92138C47kΩ47kΩqUN92148D10kΩ47kΩqUN92158E10kΩ—qUN92168F4.7kΩ—qUN92178H22kΩ—qUN92188I0.51kΩ5.1kΩqUN92198K1kΩ10kΩqUN92108L47kΩ—qUN921D8M47kΩ10kΩqUN921E8N47kΩ22kΩqUN921F8O4.7kΩ10kΩqUN921K8P10kΩ4.7kΩqUN921L8Q4.7kΩ4.7kΩqUNR921MEL2.2kΩ47kΩqUNR921NEX4.7kΩ47kΩqUNR921AJ8X100kΩ100kΩqUNR921BJ8Y100kΩ—qUNR921CJ8Z—47kΩ

sAbsolute Maximum Ratings (Ta=25˚C)Unit: mm

UN1210中文资料

UN1210中文资料

1Transistors with built-in ResistorUN1211/1212/1213/1214/1215/1216/1217/1218/1219/1210/121D/121E/121F/121K/121LSilicon NPN epitaxial planer transistorFor digital circuitssFeaturesqCosts can be reduced through downsizing of the equipment andreduction of the number of parts.qM type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.sResistance by Part Number(R1)(R2)qUN121110kΩ10kΩqUN121222kΩ22kΩqUN121347kΩ47kΩqUN121410kΩ47kΩqUN121510kΩ—qUN12164.7kΩ—qUN121722kΩ—qUN12180.51kΩ5.1kΩqUN12191kΩ10kΩqUN121047kΩ—qUN121D47kΩ10kΩqUN121E47kΩ22kΩqUN121F4.7kΩ10kΩqUN121K10kΩ4.7kΩqUN121L4.7kΩ4.7kΩsAbsolute Maximum Ratings (Ta=25˚C)1:Base2:Collector3:EmitterM Type Mold PackageUnit: mm

Internal Connection

ParameterSymbolRatingsUnitCollector to base voltageVCBO50VCollector to emitter voltageVCEO50VCollector currentIC100mATotal power dissipationPT400mWJunction temperatureTj150˚CStorage temperatureTstg–55 to +150˚C6.9±0.1

交通运输分类号

交通运输分类号

文献标识码

文献标识码是按照《中国学术期刊(光盘版)检索与评价数据规范》规定的分类码，其作用在于对文章按其内容进行归类、以便于文献的统计、期刊评价、确定文献的检索范围，提高检索结果的适用性等。具体如下：

A--理论与应用研究学术论文(包括综述报告)

B--实用性技术成果报告(科技)、理论学习与社会实践总结(社科)

C--业务指导与技术管理性文章(包括领导讲话、特约评论等)

D--一般动态性信息(通讯、报道、会议活动、专访等)

E--文件、资料(包括历史资料、统计资料、机构、人物、书刊、知识介绍等)

说明：1）不属于上述各类的文章以及文摘、零讯、补白、广告、启事等不加文献标识码。

2）中文文章的文献标识码以 "文献标识码："或"［文献标识码］"作为标识，如：文献标识码： A

3）英文文章的文献标识码以"Document code:"作为标识

U 交通运输

[U-9] 交通运输经济

U1 综合运输

U11 综合运输体制与结构

U111 运输体制

U113 运输网

U115 运输枢纽

U116 合理运输

U116.1 运输协调与分工

U116.2 运输线路优选

U116.5 运输量调节

U12/18 各种交通运输

U12 城市交通运输

U121 市内交通运输

U122 过境交通运输

U123 入境交通运输

U124 离境交通运输

U125 市际运输、城间运输

U126 城乡运输

U13 乡村交通运输

U14 长途运输

52514调质钢 铬钢41Cr4

52514调质钢 铬钢41Cr4

调质钢——铬钢41Cr4

52514

目的

该标准包括了调质和表面淬火钢41Cr4的要求和图纸插图编号。

1 一般

1.1 钢材类型

调质和表面淬火的铬合金钢

注意：对于铅钢，见章节4.3和标准52126。

1.2 应用

小型或中型尺寸的调质或感应淬火零件需要好的韧性和强度，感应淬火的表面硬度较高。

调质条件的运用举例：球销、柱状物和紧固件。感应淬火条件：刚性车轴。

1.3 等效标准

以下等效标准只提供信息。在做出任何替换之前应咨询中心实验室。

UNI 7845 欧洲标准EU119 DIN17200 NF-35-551 B.S.970 SAE

41Cr4 41Cr4 41Cr4 42Cr4 530A40 5140

2 要求

除了以下表明的外，还应使用P.S.9.50230要求。

2.1 化学分析

2.1.1 钢包分析，%

C Mn Si Cr Cu S P max. Al(总数)

0.38-0.45 0.50-0.80 0.15-0.35 0.90-1.20 (*)0.30 0.020-0.040 0.035 0.020-0.050

当部件是通过完全或部分冷变形的方式生产时(*)0.20。

2.1.2 检验分析

对于限定值的允许偏差已在标准52120中的章节2.1.1给出。

2.2 调质钢的拉伸和冲击强度-更换样品

根据标准50225和以下的热处理方式，对加工为16mm直径的测试片的样品进行拉伸和冲击强度检验：

-淬火：加热至85010℃，至少浸泡30分钟，在水中冷浸。

-应力消除：加热至60020℃，至少浸泡1个小时，在静止空气中冷却。

拉伸强度（标准50113） 冲击强度（标准50130）Ku min.

J R

2/mmN pR0.2min.

2/mmN A min.

%

980-1180 785 9 30

2.3 淬硬性

应根据标准50201进行末端淬透性试验。

淬硬温度8555℃。