ZnO nano-column

  • 格式:pdf
  • 大小:861.75 KB
  • 文档页数:4

310
HUANG BinWang, et al.
Sci China Tech Sci
Febuary (2010) Vol.53 No.2
radical oxygen was produced in a radio-frequency plasma cell with the operating power fixed at 250 W. The oxygen flow rate was fixed at 1.2 sccm and the zinc temperature was 340°C. We maintained the substrate at room temperature and the pressure of MBE chamber at 8103 Pa during the growth. The sample was annealed under ultra high vacuum (UHV) by resistance heating with currents of 0.6, 0.8, 1.0 and 1.2 A, respectively. The corresponding temperatures were about 300, 350, 400 and 500°C. STM measurements were carried out in each step with a 2.0 V bias. The samples were analyzed by X-ray diffraction (XRD), with a PANalytical X’Pert PRO X-ray diffractometer with CuK (= 0.15418 nm) incident radiation.
1
Introduction
In recent years, wide band-gap semiconductors have been used widely in optoelectronic devices. ZnO has a wide band gap (3.37 eV) and a high exciton binding energy (60 meV), and has received great attention due to its potential applications in blue and ultraviolet devices [1–4]. Due to the hexagonal structure and polar crystal surfaces, ZnO exhibits a large family of nanostructures, such as nano-tube [5], nano-wire [6], nano-belt [7], and nano-rod [8]. However, square ZnO nano-column has been scarcely reported. This paper reports the growth of square ZnO nano-column and the effects of thermal annealing on its microstructure evolution. Due to the very large lattice mismatching, silicon is not the idealist substrate for the epitaxial growth of single crystal ZnO, although there are still quite a large number of reports on the epitaxial growth of wurtzite ZnO on Si (111) substrate [9]. On the other hand, partially owing to the stress induced by the large lattice mismatching, nanostructure ZnO can be much easily realized on silicon, thus a great
Citation: Huang B W, Zhan H H, Wu Y P, et al. Square ZnO nano-column and its thermal evolution. Sci China Tech Sci, 2010, 53:309312, doi: 10.1007/s11431-010-0039-y
2 Experimental
The growth and scanning tunneling microscopy (STM) investigations were carried out by an OMICRON molecular beam epitaxy/scanning probe microscopy (MBE/SPM) united system. Individual MBE and SPM chambers were separated by a gate valve to enable easy transferring of samples between them. The p-Si (100) substrate was degreased in alcohol, rinsed in de-ionized water. After the substrate was cleaned chemically, it was mounted into the SPM chamber, where the substrate was heated at 700°C for one hour. After this surface pretreatment, the substrate was transferred to the MBE chamber. The precursors used for the ZnO film growth were elemental Zn and radical O. The
rectangles, implying the material can be a mixture of zincblende and wurtzite ZnO. All of theses nano-columns have regular direction along the longest side. The formation of such nanostructure may be related to the large lattice mismatch and intrinsic compressive stress (i.e., Laplace pressure) [11]. The XRD measurements depicted in Figure 2 confirmed our above hypothesis about the structure of material which consisted of both the wurtzite and the zincblende phases. We can observe peaks around 69.5° and 76.5° for (400) and (331) peaks of the silicon substrate [12], and the peaks of wurtzite ZnO at 34.4°, 47.5°, 57.0°, 63.5° and 67.0° for (002), (102), (110), (103), (200) planes, respectively [13]. The wurtzite (0 0 2) peaks of ZnO films prepared at RT and after annealing locate at 34.35° and 34.44°, respectively. Compared with the corresponding position of ZnO powder (2=34.42°), the diffraction angle of films grown at RT is smaller, indicating that ZnO films grown at RT suffer compressive stress. After annealing the compressive stress is reduced. Similar conclusion can be found in the work of Chu et al. [14]. The remained peaks at 33°, 57.5° and 68.0° are assigned to the peaks for the (111), (220) and (311) planes of zincblende ZnO [15]. The (200) peak usually observed at 39.5° is not presented due to its very low intensity. In general, the wurtzite ZnO has a growth privilege over the zincblende ZnO. Due to cubic silicon substrate and the very low epitaxial temperature, i.e., room temperature, the initial growth of ZnO tends to form more zincblende ZnO in the cubic structure. With the increase of thickness, the influence from the substrates is weakened, then it tends to form more stable wurtzite structure. However, owing to the small molecular mobility at low temperature, the nano-islands are not easy to transform or undergo a bigger merger, thus the square pattern is retained. The morphology evolution of the square ZnO nano-columns during different annealing stages is imaged by STM, as shown in Figure 3. After being annealed with a current of