LM3045中文资料

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TL H 7950LM3045 LM3046 LM3086 Transistor ArraysDecember1994LM3045 LM3046 LM3086Transistor ArraysGeneral DescriptionThe LM3045 LM3046and LM3086each consist of fivegeneral purpose silicon NPN transistors on a commonmonolithic substrate Two of the transistors are internallyconnected to form a differentially-connected pair The tran-sistors are well suited to a wide variety of applications in lowpower system in the DC through VHF range They may beused as discrete transistors in conventional circuits howev-er in addition they provide the very significant inherent inte-grated circuit advantages of close electrical and thermalmatching The LM3045is supplied in a14-lead cavity dual-in-line package rated for operation over the full military tem-perature range The LM3046and LM3086are electricallyidentical to the LM3045but are supplied in a14-lead mold-ed dual-in-line package for applications requiring only a lim-ited temperature rangeFeaturesY Two matched pairs of transistorsV BE matched g5mVInput offset current2m A max at I C e1mAY Five general purpose monolithic transistorsY Operation from DC to120MHzY Wide operating current rangeY Low noise figure3 2dB typ at1kHzY Full militarytemperature range(LM3045)b55 C to a125 CApplicationsY General use in all types of signal processing systemsoperating anywhere in the frequency range from DC toVHFY Custom designed differential amplifiersY Temperature compensated amplifiersSchematic and Connection DiagramDual-In-Line and Small Outline PackagesTL H 7950–1Top ViewOrder Number LM3045J LM3046M LM3046N or LM3086NSee NS Package Number J14A M14A or N14AC1995National Semiconductor Corporation RRD-B30M115 Printed in U S AAbsolute Maximum Ratings (T A e 25 C)If Military Aerospace specified devices are required please contact the National Semiconductor Sales Office Distributors for availability and specificationsLM3045LM3046 LM3086Each Total Each Total Units Transistor Package Transistor PackagePower Dissipation T A e 25 C 300750300750mW T A e 25 C to 55 C 300750mW T A l 55 C Derate at 6 67mW C T A e 25 C to 75 C 300750mW T A l 75 C Derate at 8mW C Collector to Emitter Voltage V CEO 1515V Collector to Base Voltage V CBO 2020V Collector to Substrate Voltage V CIO (Note 1)2020VEmitter to Base Voltage V EBO55V Collector Current I C5050mA Operating Temperature Rangeb 55 C to a 125 C b 40 C to a 85 C Storage Temperature Rangeb 65 C to a 150 C b 65 C to a 85 C Soldering InformationDual-In-Line Package Soldering (10Sec )260 C260 CSmall Outline Package Vapor Phase (60Seconds)215 C Infrared (15Seconds)220 CSee AN-450‘‘Surface Mounting Methods and Their Effect on Product Reliability’’for other methods of soldering surface mount devicesElectrical Characteristics (T A e 25 C unless otherwise specified)LimitsLimits ParameterConditionsLM3045 LM3046LM3086UnitsMin Typ MaxMin Typ MaxCollector to Base Breakdown Voltage (V (BR)CBO )I C e 10m A I E e 020602060V Collector to Emitter Breakdown Voltage (V (BR)CEO )I C e 1mA I B e 015241524V Collector to Substrate Breakdown I C e 10m A I CI e 020602060V Voltage (V (BR)CIO )Emitter to Base Breakdown Voltage (V (BR)EBO )I E 10m A I C e 05757V Collector Cutoff Current (I CBO )V CB e 10V I E e 00 002400 002100nA Collector Cutoff Current (I CEO )V CE e 10V I B e 00 55m A Static Forward Current Transfer V CE e 3VI C e 10mA 100100Ratio (Static Beta)(h FE )I C e 1mA 4010040100I C e 10m A5454Input Offset Current for Matched V CE e 3V I C e 1mA 0 32m A Pair Q 1and Q 2l I O1b I IO2l Base to Emitter Voltage (V BE )V CE e 3VI E e 1mA 0 7150 715V I E e 10mA0 8000 800Magnitude of Input Offset Voltage for V CE e 3V I C e 1mA 0 455mV Differential Pair l V BE1b V BE2lMagnitude of Input Offset Voltage for Isolated V CE e 3V I C e 1mATransistors l V BE3b V BE4l l V BE4b V BE5l 0 455mVl V BE5b V BE3lTemperature Coefficient of Base to V CE e 3V I C e 1mAEmitter VoltageD V BED TJb 1 9b 1 9mV C Collector to Emitter Saturation Voltage (V CE(SAT))I B e 1mA I C e 10mA 0 230 23V Temperature Coefficient of V CE e 3V I C e 1mAInput Offset VoltageD V 10D TJ1 1m V CNote 1 The collector of each transistor of the LM3045 LM3046 and LM3086is isolated from the substrate by an integral diode The substrate (terminal 13)must be connected to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor action2Electrical Characteristics (Continued)ParameterConditions MinTyp MaxUnits Low Frequency Noise Figure (NF)f e 1kHz V CE e 3V 3 25dBI C e 100m A R S e 1k X LOW FREQUENCY SMALL SIGNAL EQUIVALENT CIRCUIT CHARACTERISTICS Forward Current Transfer Ratio (h fe )f e 1kHz V CE e 3V 110(LM3045 LM3046)I C e 1mA(LM3086)Short Circuit Input Impednace (h ie )3 5k X Open Circuit Output Impedance (h oe )15 6m mhoOpen Circuit Reverse Voltage Transfer Ratio (h re )1 8x 10b 4ADMITTANCE CHARACTERISTICS Forward Transfer Admittance (Y fe )f e 1MHz V CE e 3V 31b j 1 5Input Admittance (Y ie )I C e 1mA0 3a J 0 04Output Admittance (Y oe )0 001a j 0 03Reverse Transfer Admittance (Y re )See Curve Gain Bandwidth Product (f T )V CE e 3V I C e 3mA 300550Emitter to Base Capacitance (C EB )V EB e 3V I E e 00 6pF Collector to Base Capacitance (C CB )V CB e 3V I C e 00 58pF Collector to Substrate Capacitance (C CI )V CS e 3V I C e 02 8pFTypical Performance CharacteristicsTemperature for Each Cutoff Current vs Ambient Typical Collector To Base TransistorTemperature for Each Cutoff Current vs Ambient Typical Collector To Emitter TransistorBeta Ratio for Transistors Q 1and Q 2vs Emitter CurrentCurrent-Transfer Ratio and Typical Static ForwardTL H 7950–2Q 1Q 2vs Collector Currentfor Matched Transistor Pair Typical Input Offset Current Offset Voltage for Differential Voltage Characteristic and Input Typical Static Base To Emitter Transistors vs Emitter CurrentPair and Paired IsolatedTL H 7950–33Typical Performance Characteristics(Continued)Each Transistor vs Ambient Voltage Characteristic for Typical Base To Emitter TemperaturePair and Paired Isolated Characteristics for Differential Typical Input Offset Voltage TemperatureTransistors vs Ambient Collector CurrentTypical Noise Figure vs TL H 7950–4Typical Normalized Forward Current Transfer Ratio Short Circuit Input ImpedanceOpen Circuit Output Impedance Collector Current Typical Noise Figure vs Collector CurrentTypical Noise Figure vs Collector CurrentVoltage Transfer Ratio vs and Open Circuit Reverse TL H 7950–5Admittance vs Frequency Typical Forward Transfer vs Frequency Typical Input Admittance vs FrequencyTypical Output Admittance TL H 7950–64Typical Performance Characteristics(Continued)Admittance vs FrequencyTypical Reverse Transfer Product vs Collector CurrentTypical Gain-BandwidthTL H 7950–7Physical Dimensions inches (millimeters)Ceramic Dual-In-Line Package (J)Order Number LM3045J NS Package Number J14A5L M 3045 L M 3046 L M 3086T r a n s i s t o r A r r a y sPhysical Dimensions inches (millimeters)(Continued)Molded Small Outline Package (M)Order Number LM3046M NS Package Number M14AMolded Dual-In-Line Package (N)Order Number LM3046N or LM3086NNS Package Number N14ALIFE SUPPORT POLICYNATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION As used herein 1 Life support devices or systems are devices or 2 A critical component is any component of a life systems which (a)are intended for surgical implant support device or system whose failure to perform can into the body or (b)support or sustain life and whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system or to affect its safety or with instructions for use provided in the labeling can effectivenessbe reasonably expected to result in a significant injury to the userNational Semiconductor National Semiconductor National Semiconductor National Semiconductor CorporationEuropeHong Kong LtdJapan Ltd1111West Bardin RoadFax (a 49)0-180-530858613th Floor Straight Block Tel 81-043-299-2309。